Abstract: The present invention relates to a semiconductor device and a method of forming the same, the semiconductor device includes a substrate, a gate structure, an insulating stacked structure and a first conductive layer. The gate structure is disposed on the substrate, and the insulating stacked structure covers the gate structure and the substrate to define a first opening therein to expose a portion of the gate structure and a portion of the substrate. The first conductive layer covers surfaces of the first opening to directly contact the portion of the substrate and the portion of the gate structure, with the first conductive layer including two outer extension wings on a top surface of the insulating stacked structure.

Abstract: Provided is a method, system, and computer program product for managing requests received by a storage system. The method may include detecting, by one or more processors, a failure in a first storage system in response to a request to access data in the first storage system. The first storage system may include a primary storage for storing the data. A second storage system may be activated in response to the detected failure. The second storage system may include a first storage and a second storage. The first storage may include data synchronized with the primary storage of the first storage system. The second storage may be used to store data that corresponds to the request. The request may be managed using the second storage system.

Abstract: A circuit arrangement for controlling a backlight source and an operation method are provided. The circuit arrangement includes a generator. The generator receives a sync signal and generates a pulse width modulation signal synchronous with the sync signal to control the backlight source. The sync signal indicates a frequency of a video including a series of image frames. The sync signal includes a sync period corresponding to a frame of the video. The pulse width modulation signal includes a first waveform pattern in a first sub-period of the sync period and a second waveform pattern in a second sub-period of the sync period. Each of the first waveform pattern and the second waveform pattern includes at least one active pulse. The first waveform pattern is substantially identical to the second waveform pattern.

Abstract: Structures and formation methods of a semiconductor device structure are provided. The method includes forming a dielectric layer over a semiconductor substrate and forming an opening in the dielectric layer to expose a conductive element. The method also includes forming a conductive layer over the conductive element and modifying an upper portion of the conductive layer using a plasma operation to form a modified region. The method further includes forming a conductive plug over the modified region.

Abstract: The present invention includes methods for effecting phenotype conversion in a cell by transfecting the cell with phenotype-converting nucleic acid. Expression of the nucleic acids results in a phenotype conversion in the transfected cell. Preferably the phenotype-converting nucleic acid is a transcriptome, and more preferably an mRNA transcriptome.

Abstract: A microLED display includes a first main substrate, microLEDs disposed above the first main substrate, a first light blocking layer disposed above the first main substrate to define emission areas, a light guiding layer disposed in the emission areas, and a plurality of connecting structures disposed in the emission areas respectively and electrically connected with the microLEDs.

Abstract: In an embodiment, a method includes: forming a differential contact etch stop layer (CESL) having a first portion over a source/drain region and a second portion along a gate stack, the source/drain region being in a substrate, the gate stack being over the substrate proximate the source/drain region, a first thickness of the first portion being greater than a second thickness of the second portion; depositing a first interlayer dielectric (ILD) over the differential CESL; forming a source/drain contact opening in the first ILD; forming a contact spacer along sidewalls of the source/drain contact opening; after forming the contact spacer, extending the source/drain contact opening through the differential CESL; and forming a first source/drain contact in the extended source/drain contact opening, the first source/drain contact physically and electrically coupling the source/drain region, the contact spacer physically separating the first source/drain contact from the first ILD.

Abstract: A bottom emission microLED display includes a microLED disposed above a transparent substrate; a light guiding layer surrounding the microLED to controllably guide light generated by the microLED towards the transparent substrate; and a reflecting layer formed over the light guiding layer to reflect the light generated by the microLED downwards and to confine the light generated by the microLED to prevent the light from leaking upwards or sidewards.

Abstract: A grinding wheel tool for microgroove processing and a method for fabricating a microgroove, including a grinding wheel tool body. The grinding wheel tool body is formed by sequentially stacking a plurality of grinding wheel sheets along a thickness direction of each of the plurality of grinding wheel sheet, and the initial diameters of the individual grinding wheel sheets are the same. The outer edge circumference of each grinding wheel sheet is different due to notches, the grinding wheel sheet with a large outer edge circumference wears slowly; the grinding wheel sheet with small outer edge circumference wears fast. For the grinding process of microgrooves of the same depth, the processing end face of the grinding wheel tool body will eventually form a stable contour shape, and the outer edge circumference of each grinding wheel sheet can be adjusted by notches to form different contour shapes.

Abstract: Methods are disclosed herein for forming conductive patterns having small pitches. An exemplary method includes forming a metal line in a first dielectric layer. The metal line has a first dimension along a first direction and a second dimension along a second direction that is different than the first direction. The method includes forming a patterned mask layer having an opening that exposes a portion of the metal line along an entirety of the second dimension and etching the portion of the metal line exposed by the opening of the patterned mask layer until reaching the first dielectric layer. The metal line is thus separated into a first metal feature and a second metal feature. After removing the patterned mask layer, a barrier layer is deposited over exposed surfaces of the first metal feature and the second metal feature and a second dielectric layer is deposited over the barrier layer.

Abstract: An interconnection structure includes a first dielectric layer, a bottom conductive feature present in the first dielectric layer, a second dielectric layer present on the first dielectric layer, an aluminum-containing etch stop layer present between the first dielectric layer and the second dielectric layer, an upper conductive via present at least in the second dielectric layer and electrically connected to the bottom conductive feature, and at least one aluminum-containing fragment present at least at a bottom corner of the upper conductive via.

Abstract: A semiconductor arrangement and method of forming the same are described. A semiconductor arrangement includes a third metal connect in contact with a first metal connect in a first active region and a second metal connect in a second active region, and over a shallow trench isolation region located between the first active region and a second active region. A method of forming the semiconductor arrangement includes forming a first opening over the first metal connect, the STI region, and the second metal connect, and forming the third metal connect in the first opening. Forming the third metal connect over the first metal connect and the second metal connect mitigates RC coupling.

Abstract: An integrated fan-out package including an integrated circuit, an insulating encapsulation, and a redistribution circuit structure is provided. The integrated circuit includes an active surface, a plurality of sidewalls connected to the active surface, and a plurality of pads distributed on the active surface. The insulating encapsulation encapsulates the active surface and the sidewalls of the integrated circuit. The insulating encapsulation includes a plurality of first contact openings and a plurality of through holes, and the pads are exposed by the first contact openings. The redistribution circuit structure includes a redistribution conductive layer, wherein the redistribution conductive layer is disposed on the insulating encapsulation and is distributed in the first contact openings and the through holes. The redistribution conductive layer is electrically connected to the pads through the first contact openings. A method of fabricating the integrated fan-out package is also provided.

Abstract: Semiconductor devices and methods of fabricating semiconductor devices are provided. The present disclosure provides a semiconductor device that includes a first fin structure and a second fin structure each extending from a substrate; a first gate segment over the first fin structure and a second gate segment over the second fin structure; a first isolation feature separating the first and second gate segments; a first source/drain (S/D) feature over the first fin structure and adjacent to the first gate segment; a second S/D feature over the second fin structure and adjacent to the second gate segment; and a second isolation feature also disposed in the trench. The first and second S/D features are separated by the second isolation feature, and a composition of the second isolation feature is different from a composition of the first isolation feature.

Abstract: The present invention provides an exchangeable-battery photocuring device, comprising a supporting frame, having a plurality of walls, wherein the plurality of walls constitutes a chamber having at least one opening; a UV LED module, disposed on the supporting frame; a outer housing, having an external opening corresponding to the opening of the supporting frame; a control module; an exchangeable battery module, disposed on the supporting frame, wherein the exchangeable battery module comprises a battery holder and a battery, and the exchangeable battery module is electrically connected to the control module, and a handle. The present invention applying an exchangeable battery module achieves that the photocuring device is used without being constrained by location and space. Furthermore, the present invention also provides an exchangeable-battery photocuring device with a slidable lid and a portable battery photocuring device with a slidable lid.

Abstract: A foam sealing block is provided for sealing a cable channel by which one or more cables traverse into an air-cooled compartment. The foam sealing block may folded around the cables and positioned within the cable channel. The insertion of the folded foam sealing block prevents the transfer of air from the air-cooled compartment via the cable channel, while still allowing the cables to traverse the cable channel. The top surface of the foam sealing block may formed from offset rows of protrusions, such as hemispherical shaped protrusions. The dimensions and shape of the protrusions may be selected based on the physical characteristics of the cables traversing the cable channel. The bottom surface of the foam sealing block may be formed from a perforated, rigid bracket that allows the foam sealing block to fit securely within the cable channel.

Abstract: A method includes providing a structure that includes a substrate, a first gate structure and a second gate structure over the substrate, and a first source/drain (S/D) feature and a second S/D feature over the substrate. The first S/D feature is adjacent to the first gate structure, the second S/D feature is adjacent to the second gate structure, the first S/D feature is configured for an n-type transistor, and the second S/D feature is configured for a p-type transistor. The method further includes introducing a p-type dopant into both the first and the second S/D features. After the introducing of the p-type dopant, the method further includes performing an etching process to the first and the second S/D features, wherein the etching process etches the first S/D feature faster than it etches the second S/D feature.

Abstract: A microLED display includes a first main substrate, microLEDs disposed above the first main substrate, a first light blocking layer disposed above the first main substrate to define emission areas, a light guiding layer disposed in the emission areas, and a plurality of connecting structures disposed in the emission areas respectively and electrically connected with the microLEDs.

Abstract: A microLED display includes a first main substrate, micrLEDs disposed above the first main substrate, a first light blocking layer disposed above the first main substrate to define emission areas, a light guiding layer disposed in the emission areas, and a plurality of connecting structures disposed in the emission areas respectively and electrically connected with the microLEDs.

Abstract: A semiconductor device includes an n-type FET device and a p-type FET device. The n-type FET device includes a first substrate region, a first gate stack, a first gate spacer over sidewalls of the first gate stack, and an n-type epitaxial feature in a source/drain (S/D) region of the n-type FET device. The p-type FET device includes a second substrate region, a second gate stack, a second gate spacer over sidewalls of the second gate stack, and a p-type epitaxial feature in an S/D region of the p-type FET device. A vertical distance between a bottom surface of the first gate spacer and a lowest point of an upper surface of the n-type epitaxial feature is greater than a vertical distance between a bottom surface of the second gate spacer and a lowest point of an upper surface of the p-type epitaxial feature.