Abstract: A light extraction film having internal nanostructures and external microstructures for organic light emitting diode (OLED) devices. The light extraction film includes a flexible substantially transparent film, a low index nanostructured layer applied to the film, and a high index planarizing backfill layer applied over the nanostructured layer. External optical microstructures are applied to the flexible substantially transparent film on a side opposite the nanostructured layer to enhance light extraction from the OLED devices while providing for a more uniform luminance distribution.

Abstract: 8-quinolinol (8Q) and derivatives thereof for use in the treatment of proliferative diseases such as cancer, in particular slow metabolizing quiescent cancer stem cells.

Abstract: An electrochemical sensor to measure disinfectants is provided. In accordance with one aspect of the invention, the sensor has a silver working electrode disposed in an electrolyte proximate a porous membrane. There is a reference electrode made of silver in contact with the electrolyte. The chemical composition of electrolyte contains one or more anions that make the potential at the reference electrode higher than 0.35 V versus standard hydrogen electrode. The anions form silver salt with solubility higher than the solubility of silver chloride. The voltage at the working electrode versus the reference electrode is maintained negative to keep the background current small enough while maintains the feasibility to reduce disinfectants. Solid phase silver salt of the anions is added within the sensor body, which will prevent poisoning the reference electrode by halide anions diffused into the electrolyte.

Abstract: Lightguides, devices incorporating lightguides, processes for making lightguides, and tools used to make lightguides are described. A lightguide includes light extractors arranged in a plurality of regions on a surface of the lightguide. The orientation of light extractors in each region is arranged to enhance uniformity and brightness across a surface of the lightguide and to provide enhanced defect hiding. The efficiency of the light extractors is controlled by the angle of a given light extractor face with respect to a light source illuminating the light guide.

Abstract: A multifunctional optical film for enhancing light extraction includes a flexible substrate, a structured layer, and a backfill layer. The structured layer effectively uses microreplicated diffractive or scattering nanostructures located near enough to the light generation region to enable extraction of an evanescent wave from an organic light emitting diode (OLED) device. The backfill layer has a material having an index of refraction different from the index of refraction of the structured layer. The backfill layer also provides a planarizing layer over the structured layer in order to conform the light extraction film to a layer of an OLED lighting device such as solid state lighting devices or backlight units. The film may have additional layers added to or incorporated within it to an emissive surface in order to effect additional functionalities beyond improvement of light extraction efficiency.

Abstract: A method for fabrication of features for an integrated circuit includes patterning a first semiconductor structure on a surface of a semiconductor device, and epitaxially growing semiconductor material on opposite sides of the first semiconductor structure to form fins. A first angled ion implantation is applied to one side of the first semiconductor structure to dope a respective fin on the one side. The first semiconductor structure is selectively removed to expose the fins. Fin field effect transistors are formed using the fins.

Abstract: An apparatus for detecting electromagnetic wave includes an electromagnetic wave sensor, a first electrode and a second electrode spaced from each other and electrically connected to the electromagnetic wave sensor, and a measuring device electrically connected to the first electrode and the second electrode. The electromagnetic wave sensor includes a carbon nanotube structure. The carbon nanotube structure includes a plurality of carbon nanotubes extending along a same direction from the first electrode to the second electrode. The measuring device is capable of measuring resistance of the carbon nanotube structure.

Abstract: A method for detecting an electromagnetic wave includes: providing a carbon nanotube structure including a plurality of carbon nanotubes arranged along a same direction. The carbon nanotube structure is irradiated by an electromagnetic wave to be measured. The resistance of the carbon nanotube structure irradiated by the electromagnetic wave is measured.

Abstract: A system and method for determining characteristics of a physical environment with simple motion patterns are provided. A plurality of raw orientation readings are received from a simple motion pattern. A distribution of possible wall orientations upon each raw reading is determined. Wall direction is determined as the mean value of the distribution.

Abstract: One embodiment of the present invention provides a system that performs a query-based convergecast scheduling in a convergecast network, which includes a base-station and a plurality of nodes. During operation, the system receives a convergecast tree for the convergecast network. Each node in the convergecast tree is associated with a hop-count to the base-station through a specific branch and each node can generate zero or more packets to transmit. Next, the system initializes a query from the base-station, wherein the query is successively propagated to the nodes through the branches. In response to the query, the system computes distributed-timing-information indicating a packet transmission schedule for the nodes. The system next aggregates the distributed-timing-information associated with the nodes toward the base-station through the branches. The system then forwards the aggregated distributed-timing-information to the plurality of nodes.

Abstract: A method for processing CMOS wells, and performing multiple ion implantations with the use of a single hard mask is disclosed. The method includes forming and patterning a hardmask over a substrate, whereby the hardmask attains a first opening. The substrate may be a semiconductor substrate. The method further includes performing a first ion implantation, during which, outside the first opening the hardmask is essentially preventing ions from reaching the substrate. The method further involves the application of a photoresist in such a manner that the photoresist is covering the hardmask, and it is also filling up the first opening. This is followed by using the photoresist to pattern the hardmask, whereby the hardmask attains a second opening. The method further includes performing a second ion implantation, during which, outside the second opening, the hardmask and the photoresist, which fills the first opening, are essentially preventing ions from reaching the substrate.

Abstract: A multifunctional optical film for enhancing light extraction includes a flexible substrate, a structured layer having nanoparticles of different sizes, and a backfill layer. The structured layer effectively uses microreplicated diffractive or scattering nanostructures located near enough to the light generation region to enable extraction of an evanescent wave from an organic light emitting diode (OLED) device. The backfill layer has a material having an index of refraction different from the index of refraction of the structured layer. The backfill layer also provides a planarizing layer over the structured layer in order to conform the light extraction film to a layer of an OLED display device. The film may have additional layers added to or incorporated within it to an emissive surface in order to effect additional functionalities beyond improvement of light extraction efficiency.

Abstract: A semiconductor device is provided that in one embodiment includes at least one semiconductor fin structure atop a dielectric surface, the semiconductor fin structure including a channel region of a first conductivity type and source and drain regions of a second conductivity type, in which the source and drain regions are present at opposing ends of the semiconductor fin structure. A high-k gate dielectric layer having a thickness ranging from 1.0 nm to 5.0 nm is in direct contact with the channel of the semiconductor fin structure. At least one gate conductor layer is in direct contact with the high-k gate dielectric layer. A method of forming the aforementioned device is also provided.

Abstract: Compounds and salts thereof, formulations thereof, conjugates thereof, derivatives thereof, forms thereof and uses thereof are described. In certain aspects and embodiments, the described compounds or salts thereof, formulations thereof, conjugates thereof, derivatives thereof, forms thereof are active on at least one Raf protein kinase. In certain aspects and embodiments, the described compounds are active in inhibiting proliferation of a Ras mutant cell line. Also described are methods of use thereof to treat diseases and conditions, including diseases and conditions associated with activity of B-Raf V600E mutant protein kinase, including melanoma, glioma, glioblastoma multiforme, pilocytic astrocytoma, colorectal cancer, thyroid cancer, lung cancer, ovarian cancer, prostate cancer, liver cancer, gallbladder cancer, gastrointestinal stromal tumors, biliary tract cancer, and cholangiocarcinoma.

Abstract: A vertical stack of a first silicon germanium alloy layer, a second epitaxial silicon layer, a second silicon germanium layer, and a germanium layer are formed epitaxially on a top surface of a first epitaxial silicon layer. The second epitaxial silicon layer, the second silicon germanium layer, and the germanium layer are patterned and encapsulated by a dielectric cap portion, a dielectric spacer, and the first silicon germanium layer. The silicon germanium layer is removed between the first and second silicon layers to form a silicon germanium mesa structure that structurally support an overhanging structure comprising a stack of a silicon portion, a silicon germanium alloy portion, a germanium photodetector, and a dielectric cap portion. The germanium photodetector is suspended by the silicon germanium mesa structure and does not abut a silicon waveguide. Germanium diffusion into the silicon waveguide and defect density in the germanium detector are minimized.

Abstract: A multifunctional optical film for enhancing light extraction includes a flexible substrate, a structured layer having nanoparticles of different sizes, and a backfill layer. The structured layer effectively uses microreplicated diffractive or scattering nanostructures located near enough to the light generation region to enable extraction of an evanescent wave from an organic light emitting diode (OLED) device. The backfill layer has a material having an index of refraction different from the index of refraction of the structured layer. The backfill layer also provides a planarizing layer over the structured layer in order to conform the light extraction film to a layer of an OLED display device. The film may have additional layers added to or incorporated within it to an emissive surface in order to effect additional functionalities beyond improvement of light extraction efficiency.

Abstract: A method for fabricating an integrated circuit includes patterning a mandrel over a layer to be patterned. Dopants are implanted into exposed sidewalls of the mandrel to foam at least two doped layers having at least one undoped region adjacent to the doped layers. The doped layers are selectively etched away to form pillars from the undoped regions. The layer to be patterned is etched using the pillars as an etch mask to form features for an integrated circuit device. A semiconductor device is also disclosed.

Abstract: A device and method for improving performance of a transistor includes gate structures formed on a substrate having a spacing therebetween. The gate structures are formed in an operative relationship with active areas fainted in the substrate. A stress liner is formed on the gate structures. An angled ion implantation is applied to the stress liner such that ions are directed at vertical surfaces of the stress liner wherein portions of the stress liner in contact with the active areas are shielded from the ions due to a shadowing effect provided by a height and spacing between adjacent structures.

Abstract: A method for fabrication of features for an integrated circuit includes patterning a first semiconductor structure on a surface of a semiconductor device, and epitaxially growing semiconductor material on opposite sides of the first semiconductor structure to form fins. A first angled ion implantation is applied to one side of the first semiconductor structure to dope a respective fin on the one side. The first semiconductor structure is selectively removed to expose the fins. Fin field effect transistors are formed using the fins.

Abstract: Methods of fabricating light extractors are disclosed. The method of fabricating an optical construction for extracting light from a substrate includes the steps of: (a) providing a substrate that has a surface; (b) disposing a plurality of structures on the surface of the substrate, where the plurality of structures form open areas that expose the surface of the substrate; (c) shrinking at least some of the structures; and (d) applying an overcoat to cover the shrunk structures and the surface of the substrate in the open areas.