Abstract: A system and method for performing distributed sequential node localization in active sensor deployment is presented. An equilateral orthogonal reference frame is defined. The reference frame includes s+1 anchor nodes that is placed in s-dimensional physical space. New nodes are sequentially placed in a natural sequential ordering within the s-dimensional physical space to form a sequentially well-connected network. For each of the new nodes, location estimates are obtained for the new node from at least s+1 of the anchor nodes previously placed in the s-dimensional physical space. A location is determined for the new node based on the location estimates. The new node are placed in the s-dimensional physical space as a new anchor node proximate to at least one of the s+1 previously-placed anchor nodes upon satisfactory location determination.

Abstract: Methods for fabricating a CMOS structure use a first gate stack located over a first orientation region of a semiconductor substrate. A second gate material layer is located over the first gate stack and a laterally adjacent second orientation region of the semiconductor substrate. A planarizing layer is located upon the second gate material layer. The planarizing layer and the second gate material layer are non-selectively etched to form a second gate stack that approximates the height of the first gate stack. An etch stop layer may also be formed upon the first gate stack. The resulting CMOS structure may comprise different gate dielectrics, metal gates and silicon gates.

Abstract: In combination with a motor-vehicle body part, an antenna has a flat nonconductive support sheet, a conductive antenna structure applied to the sheet, and a coaxial cable connected to the antenna structure and adapted for connection to a transmitter or receiver.

Abstract: A method for processing a semiconductor fin structure is disclosed. The method includes thermal annealing a fin structure in an ambient containing an isotope of hydrogen. Following the thermal annealing step, the fin structure is etched in a crystal-orientation dependent, self-limiting, manner. The crystal-orientation dependent etch may be selected to be an aqueous solution containing ammonium hydroxide (NH4OH). The completed fin structure has smooth sidewalls and a uniform thickness profile. The fin structure sidewalls are {110} planes.

Abstract: A CMOS structure and a method for fabricating the CMOS structure include a first transistor located within a first semiconductor substrate region having a first polarity. The first transistor includes a first gate electrode that includes a first metal containing material layer and a first silicon containing material layer located upon the first metal containing material layer. The CMOS structure also includes a second transistor located within a laterally separated second semiconductor substrate region having a second polarity that is different than the first polarity. The second transistor includes a second gate electrode comprising a second metal containing material layer of a composition that is different than the first metal containing material layer, and a second silicon containing material layer located upon the second metal containing material layer. The first silicon containing material layer and the first semiconductor substrate region comprise different materials.

Abstract: A vertical stack of a first silicon germanium alloy layer, a second epitaxial silicon layer, a second silicon germanium layer, and a germanium layer are formed epitaxially on a top surface of a first epitaxial silicon layer. The second epitaxial silicon layer, the second silicon germanium layer, and the germanium layer are patterned and encapsulated by a dielectric cap portion, a dielectric spacer, and the first silicon germanium layer. The silicon germanium layer is removed between the first and second silicon layers to form a silicon germanium mesa structure that structurally support an overhanging structure comprising a stack of a silicon portion, a silicon germanium alloy portion, a germanium photodetector, and a dielectric cap portion. The germanium photodetector is suspended by the silicon germanium mesa structure and does not abut a silicon waveguide. Germanium diffusion into the silicon waveguide and defect density in the germanium detector are minimized.

Abstract: A field effect device is disclosed which has a body formed of a crystalline semiconductor material and has at least one vertically oriented section and at least one horizontally oriented section. The device is produced in SOI technology by fabricating first a formation of the device in masking insulators, and then transferring this formation through several etching steps into the SOI layer. The segmented field effect device combines FinFET, or fully depleted silicon-on-insulator FETs, type devices with fully depleted planar devices. This combination allows device width control with FinFET type devices. The segmented field effect device gives high current drive for a given layout area. The segmented field effect devices allow for the fabrication of high performance processors.

Abstract: A process including forming a silicon layer over a semiconductor wafer having features thereon and then selectively ion implanting in the silicon layer to form ion implanted regions. The step of selectively ion implanting is repeated as many times as necessary to obtain a predetermined number and density of features. Thereafter, the silicon layer is etched to form openings in the silicon layer that were formerly occupied by the ion implanted regions. The opened areas in the silicon layer form a mask for further processing of the semiconductor wafer.

Abstract: Techniques are provided for efficient information dissemination and discovery in large scale networks such as ad-hoc networks, sensor networks, vehicle networks, virtual networks and the like. The spatial information for a plurality of network elements within a network is determined and an interesting node identified. A variable resolution communication structure of inter-connected nodes is determined based on spatial information for the interesting node and a map. The map may be based on an equation, a formula, coordinates or other methods of extensibly specifying spaces. Information about the interesting node is propagated via the inter-connected nodes of the variable resolution communication structure.

Abstract: A method for using a bamboo leaf extract as an acrylamide inhibitor for heat processing food, comprises adding to the bamboo leaf extract at least one selected from a group consisting of ginkgo extract, tea extract, rosemary extract, apple polyphenol extract, haw extract, onion extract, licorice extract, root of kudzuvine extract, grape seed extract and leech extract; and preparing a composition, in which the bamboo leaf extract takes up 34-95% of the total weight of the composition. The bamboo leaf extract used as the acrylamide inhibitor in food systems has an inhibiting rate to acrylamide formation of up to 15-98%.

Abstract: A cell culture apparatus includes a substrate having formed therein a micro-pillared well array. The micro-pillared well array includes a plurality of micro-pillared wells. Each micro-pillared structure includes a plurality of spaced-apart micro-pillars having distal ends shaped to form a well. The well is suitable for cell culture.

Abstract: A cell culture apparatus includes a substrate having formed therein a micro-well array, the micro-well array comprising a plurality of micro-wells. Each micro-well is defined by a curved surface which is concave.

Abstract: Methods and compositions are provided that include a water-in-oil composition comprising an oil-based continuous phase and a discontinuous phase that comprises at least a plurality of hydrogel droplets and a method comprising providing a water-in-oil emulsion comprising an oil-based continuous phase and a discontinuous phase that comprises at least a plurality of hydrogel droplets; and placing the water-in-oil emulsion in a well bore penetrating a subterranean formation. Additional methods are also provided.

Abstract: A method is presented for message-initiated constraint-based routing for digital message communication among nodes in an ad-hoc network, in which each node includes attributes having attribute values. The method includes determining local attributes for each of the nodes in the ad-hoc network and defining constraints on the attributes. Each node is provided access to the attributes of each neighboring node, with a neighboring node being a node that is one hop away. Each message transmitted over the ad-hoc network has a message type, which includes a destination specification, route specification, and objective specification. Constraint checking and cost estimation checking are performed for each message type.

Abstract: A method is presented for a learning-based strategy utilized within message-initiated constraint-based routing for digital message communication among nodes in an ad-hoc network, in which each node includes attributes. The method includes determining local attributes for each of the nodes and defining constraints on the attributes. Each node is provided access to the attributes of each neighboring node. Each message transmitted over the network has a message type, which includes a destination specification, route specification, and objective specification. Constraint checking and cost estimation checking are performed for each message type. Cost estimation is utilized to converge on an optimal message path.

Abstract: Methods and compositions utilizing a drilling fluid comprising sub-micron precipitated barite having a weight average particle diameter below about 1 micron. Methods include a method comprising circulating a drilling fluid in a well bore, wherein the drilling fluid comprises: a carrier fluid; and a weighting agent that comprises sub-micron precipitated barite having a weight average particle diameter below about 1 micron are disclosed. In some embodiments, the drilling fluid may comprise an invert emulsion. In some embodiments, the sub-micron precipitated barite has a particle size distribution such that at least 10% of particles in the sub-micron precipitated barite have a diameter below about 0.2 micron, at least 50% of the particles in the of the sub-micron precipitated barite have a diameter below about 0.3 micron and at least 90% of the particles in the sub-micron precipitated barite have a diameter below about 0.5 micron.

Abstract: An embodiment of the present invention includes a method comprising circulating a drilling fluid in a well bore, wherein the drilling fluid comprises a carrier fluid; and a weighting agent that comprises precipitated barite having a weight average particle diameter below about 1 micron and a particle having a specific gravity of greater than about 2.6. Another embodiment of the present invention includes a drilling fluid comprising: a carrier fluid; and a weighting agent that comprises precipitated barite having a weight average particle diameter below about 1 micron, and a particle having a specific gravity of greater than about 2.6. Another embodiment of the present invention includes a weighting agent that comprises precipitated barite having a weight average particle diameter below about 1 micron, and a particle having a specific gravity of greater than about 2.6.

Abstract: Provided are diagnostic and therapeutic methods of treating sarcoidosis comprising the use of microbial catalase-peroxidase protein, its peptide fragments, or derivatives thereof.

Abstract: A semiconductor device includes a semiconductor substrate having at least one gap, extending under a portion of the semiconductor substrate. A gate stack is on the semiconductor substrate. A strain layer is formed in at least a portion of the at least one gap. The strain layer is formed only under at least one of a source region and a drain region of the semiconductor device.