Forming a non-planar transistor having a quantum well channel
In one embodiment, the present invention includes an apparatus having a substrate, a buried oxide layer formed on the substrate, a silicon on insulator (SOI) core formed on the buried oxide layer, a compressive strained quantum well (QW) layer wrapped around the SOI core, and a tensile strained silicon layer wrapped around the QW layer. Other embodiments are described and claimed.
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This application is a divisional of U.S. patent application Ser. No. 13/046,061, filed Mar. 11, 2011 now U.S. Pat. No. 8,237,153 , which is a continuation of U.S. patent application Ser. No. 11/728,891, filed Mar. 27, 2007, now U.S. Pat. No. 7,928,426, issued on Apr. 19, 2011, the content of which is hereby incorporated by reference.
BACKGROUNDA variety of electronic and optoelectronic devices can be enabled by developing thin film relaxed lattice constant III-V semiconductors on elemental silicon (Si) substrates. Surface layers capable of achieving the performance advantages of III-V materials may host a variety of high performance electronic devices such as complementary metal oxide semiconductor (CMOS) and quantum well (QW) transistors fabricated from extreme high mobility materials such as, but not limited to, indium antimonide (InSb), indium gallium arsenide (InGaAs) and indium arsenide (InAs). While such high mobility QW channels have been incorporated into planar transistors, they have not been incorporated into non-planar transistors.
In various embodiments, a high-mobility strained quantum well (QW) channel may be incorporated into a non-planar structure such as a non-planar metal oxide semiconductor field effect transistor (MOSFET). Such non-planar transistors include a silicon structure or fin formed on an underlying-oxide layer, and in turn a gate structure can be formed around the silicon fin. In this way, high mobility channels with excellent electrostatic control can be achieved for ultimate channel length scalability. Furthermore, tensile and compressive strain may be simultaneously introduced to respectively optimize electron transport in silicon for n-channel MOSFETs (NMOS) and hole transport in germanium (Ge) for p-channel MOSFETs (PMOS) using a common material core. Furthermore, correct and sufficient conduction and valence band offsets provide for electron and hole confinement. Using embodiments, transistor devices may be formed using conventional stack engineering, as an outermost core layer may be formed of silicon to allow formation of a gate stack thereon.
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Accordingly, in various embodiments non-planar transistor devices may be formed using a high mobility material to form high electron mobility transistors (HEMTs) or high hole mobility transistors (HHMTs) or high hole mobility transistors (HHMTs) having high speed and low power consumption. Such devices may have dimensions less than approximately 50 nm with a switching frequency of approximately 562 gigahertz (GHz). Such devices may be able to operate at between approximately 0.5-1.0 volts without significant reduction of drive current. Furthermore, embodiments may provide lower gate delay at a gate length than a silicon based device.
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While the present invention has been described with respect to a limited number of embodiments, those skilled in the art will appreciate numerous modifications and variations therefrom. It is intended that the appended claims cover all such modifications and variations as fall within the true spirit and scope of this present invention.
Claims
1. A method comprising:
- forming a buried oxide layer directly on a substrate;
- forming a non-planar silicon on insulator (SOI) core directly on the buried oxide layer, the non-planar SOI core formed of a silicon fin on the buried oxide layer;
- forming a quantum well (QW) layer directly around the non-planar SOI core, wherein the QW layer is formed of silicon germanium (SiGe) having a Ge concentration of at least approximately 10%, wherein the QW layer is compressive strained and having a smaller bandgap than the SOI core;
- forming a silicon layer around the QW layer; and
- the silicon layer having a smaller bandgap than the SOI core and a larger bandgap than the QW layer.
2. The method of claim 1, further comprising:
- forming a gate dielectric layer over the silicon layer; and
- forming a gate electrode layer over the gate dielectric layer.
3. The method of claim 1, further comprising forming a non-planar transistor, wherein the quantum well layer comprises a channel of the non-planar transistor.
4. The method of claim 1, further comprising forming a high electron mobility transistor (HEMT) or a high hole mobility transistor (HHMT).
5. The method of claim 1, further comprising forming the silicon fin having a width much less than a width of the buried oxide layer.
6. The method of claim 1, wherein the non-planar SOI core is strained.
7. The method of claim 1, wherein the silicon layer is tensile strained.
8. The method of claim 1, wherein forming the QW layer includes depositing the QW layer directly on the non-planar SOI core and at least a portion of the buried oxide layer not including the silicon fin.
9. A method comprising:
- forming a buried oxide layer including silicon dioxide directly on a substrate;
- forming a non-planar silicon on insulator (SOI) core directly on the buried oxide layer, the non-planar SOI core formed of a silicon fin on the buried oxide layer having a width much less than an extent of the buried oxide layer;
- forming a quantum well (QW) layer directly around the non-planar SOI core, wherein the QW layer is formed of silicon germanium (SiGe) having a Ge concentration of at least approximately 10%, wherein the QW layer is compressive strained and having a smaller bandgap than the non-planar SOI core;
- forming a silicon layer around the QW layer; and
- the silicon layer having a smaller bandgap than the SOI core and a larger bandgap than the QW layer.
10. The method of claim 9, further comprising:
- forming a gate dielectric layer over the silicon layer; and
- forming a gate electrode layer over the gate dielectric layer.
11. The method of claim 9, further comprising forming a non-planar transistor, wherein the quantum well layer comprises a channel of the non-planar transistor.
12. The method of claim 9, further comprising forming a high electron mobility transistor (HEMT) or a high hole mobility transistor (HHMT).
13. The method of claim 9, wherein forming the QW layer includes vapor deposition.
14. The method of claim 9, wherein forming the silicon layer includes vapor deposition.
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Type: Grant
Filed: May 2, 2012
Date of Patent: Dec 30, 2014
Patent Publication Number: 20120211726
Assignee: Intel Corporation (Santa Clara, CA)
Inventors: Chi On Chui (Los Angeles, CA), Prashant Majhi (Austin, TX), Wilman Tsai (Saratoga, CA), Jack T. Kavalieros (Portland, OR)
Primary Examiner: Tony Tran
Application Number: 13/461,962
International Classification: H01L 29/78 (20060101); H01L 29/10 (20060101); H01L 29/66 (20060101); H01L 29/778 (20060101);