Power semiconductor module

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Description

FIG. 1 is a front, left, and bottom side perspective view of a first embodiment of a power semiconductor module, showing our new design;

FIG. 2 is a front, right, and top side perspective view of FIG. 1;

FIG. 3 is a front view of FIG. 1;

FIG. 4 is a rear view of FIG. 1;

FIG. 5 is a left side view of FIG. 1;

FIG. 6 is a right side view of FIG. 1;

FIG. 7 is a top view of FIG. 1;

FIG. 8 is a bottom view of FIG. 1;

FIG. 9 is an exploded view of FIG. 1;

FIG. 10 is a front, left, and bottom side perspective view of the terminal module in FIG. 9, with the broken lines of the cover and the case body not shown for ease of illustration;

FIG. 11 is a rear, right, and top side perspective view of FIG. 9;

FIG. 12 is a front view of FIG. 9;

FIG. 13 is a rear view of FIG. 9;

FIG. 14 is a left side view of FIG. 9;

FIG. 15 is a right side view of FIG. 9;

FIG. 16 is a top view of FIG. 9;

FIG. 17 is a bottom view of FIG. 9;

FIG. 18 is a front, left, bottom exploded perspective view of FIG. 10;

FIG. 19 is a rear, right, and top exploded perspective view of FIG. 18;

FIG. 20 is a front, left, and bottom side perspective view of the first terminal part of the terminal module in FIG. 18, shown separately for ease of illustration;

FIG. 21 is a rear, right, and top side perspective view of FIG. 20;

FIG. 22 is a front view of FIG. 20;

FIG. 23 is a rear view of FIG. 20;

FIG. 24 is a left side view of FIG. 20;

FIG. 25 is a right side view of FIG. 20;

FIG. 26 is a top view of FIG. 20;

FIG. 27 is a bottom view of FIG. 20;

FIG. 28 is a front, left, and bottom side perspective view of the second terminal part of the terminal module in FIG. 18, shown separately for ease of illustration;

FIG. 29 is a rear, right, and top side perspective view of FIG. 28;

FIG. 30 is a front view of FIG. 28;

FIG. 31 is a rear view of FIG. 28;

FIG. 32 is a left side view of FIG. 28;

FIG. 33 is a right side view of FIG. 28;

FIG. 34 is a top view of FIG. 28;

FIG. 35 is a bottom view of FIG. 28;

FIG. 36 is a front, left, and bottom exploded perspective view of a second embodiment of a power semiconductor module, showing our new design;

FIG. 37 is a rear, right and top exploded perspective view of FIG. 36;

FIG. 38 is a front, left, and bottom side perspective view of the first terminal part of the terminal module in FIG. 36, shown separately for ease of illustration;

FIG. 39 is a bottom view of FIG. 38;

FIG. 40 is a rear, right, and top side perspective view of the second terminal part of the terminal module in FIG. 36, shown separately for ease of illustration;

FIG. 41 is a front view of FIG. 40;

FIG. 42 is a rear view of FIG. 40;

FIG. 43 is a left side view of FIG. 40;

FIG. 44 is a right side view of FIG. 40;

FIG. 45 is a top view of FIG. 40;

FIG. 46 is a front, left, and bottom side perspective view of a third embodiment of a power semiconductor module, showing our new design;

FIG. 47 is a front, right, and top side perspective view of FIG. 46;

FIG. 48 is a front view of FIG. 46;

FIG. 49 is an exploded perspective view of FIG. 46;

FIG. 50 is a front, left, and bottom side perspective view of the terminal module in FIG. 46, with the broken lines of the cover and case body not shown for ease of illustration;

FIG. 51 is a rear, right, and top side perspective view of FIG. 50;

FIG. 52 is a front view of FIG. 50;

FIG. 53 is a rear view of FIG. 50;

FIG. 54 is a left side view of FIG. 50;

FIG. 55 is a right side view of FIG. 50;

FIG. 56 is a top view of FIG. 50; and,

FIG. 57 is a bottom view of FIG. 50.

The broken lines in the figures illustrate the portions of the design that form no part of the claimed design.

Claims

The ornamental design for a power semiconductor module as shown and described.

Referenced Cited
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Other references
  • Fuji Electric offers a lineup of high-quality, highly reliable power modules suitable for various applications, https://www.fujielectric.com/products/semiconductors_devices/semiconductor/product_series/model_power_modules.html, 2025. (Year: 2025).
  • Power Devices, https://www.mitsubishielectric.com/semiconductors/, 2025. (Year: 2025).
Patent History
Patent number: D1120892
Type: Grant
Filed: Dec 22, 2022
Date of Patent: Mar 31, 2026
Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Hsinchu)
Inventors: Yuan-Cheng Huang (New Taipei City), I-Hung Chiang (Yuanlin City), Ji-Yuan Syu (Kaohsiung City), Hsin-Han Lin (Zhudong Township), Po-Kai Chiu (Taoyuan City), Kuo-Shu Kao (Zhubei City)
Primary Examiner: Elizabeth J Oswecki
Application Number: 29/863,826