Semiconductor device

- Fuji Electric Co., Ltd.
Skip to: Description  ·  Claims  ·  References Cited  · Patent History  ·  Patent History
Description

FIG. 1 is a front, top, right side perspective view of a semiconductor device showing our new design;

FIG. 2 is a front view thereof;

FIG. 3 is a rear view thereof;

FIG. 4 is a top plan view thereof;

FIG. 5 is a bottom plan view thereof;

FIG. 6 is a left side view thereof;

FIG. 7 is a right side view thereof; and,

FIG. 8 is a cross sectional view taken along line 8-8 of FIG. 4.

The broken lines shown in the drawings represent portions of the semiconductor device that form no part of the claimed design.

Claims

The ornamental design for a semiconductor device, as shown and described.

Referenced Cited
U.S. Patent Documents
D436085 January 9, 2001 Takizawa et al.
6364958 April 2, 2002 Lai et al.
D476959 July 8, 2003 Yamada et al.
7147719 December 12, 2006 Welch et al.
D569183 May 20, 2008 Blake
D572084 July 1, 2008 Blake
D580228 November 11, 2008 Hayden
D581738 December 2, 2008 Bodum
D587662 March 3, 2009 Soutome et al.
D589012 March 24, 2009 Soyano et al.
D592457 May 19, 2009 Mansfield
D593969 June 9, 2009 Li
D606951 December 29, 2009 Soyano et al.
7985663 July 26, 2011 Sato et al.
D653633 February 7, 2012 Soyano
D653634 February 7, 2012 Soyano
8338940 December 25, 2012 Yamazaki et al.
D674760 January 22, 2013 Mochizuki et al.
20050229849 October 20, 2005 Silvetti et al.
20080121620 May 29, 2008 Guo et al.
Other references
  • Yoshinari Ikeda et al.—Investigation on Wirebond-less Power Module Structure with High-Density packaging and High Reliability; Proceedings of the 23rd International Symposium on Power Semiconductor Devices & IC's, May 23, 2011 San Diego, CA; pp. 272-275.
  • Masafumi Norio et al.—New Power Module Structure with Low Thermal Impedance and High Reliability for SiC Devices; PCIM Europe 2011, May 11, 2011, Nuremberg, Germany; pp. 229-234.
  • N. Nashida et al.—New Power Module Structure with High Power Density and High Reliability for SiC Devices-Sep. 8, 2011, pp. 233-236.
  • Masafumi Norio et al.—Packaging Technologies for SiC Power Modules—vol. 84 No. 5 Nov. 10, 2011—pp. 5.
  • e-Front runners—Development of New-Generation Power Semiconductor SiC Module—Sep. 29, 2010—p. 1.
  • e-Front runners—Three Year Rolling Plan Power Semiconductor Business Strategy—Nov. 17, 2011—pp. 1-21.
Patent History
Patent number: D689833
Type: Grant
Filed: Nov 18, 2011
Date of Patent: Sep 17, 2013
Assignee: Fuji Electric Co., Ltd. (Kanagawa)
Inventors: Motohito Hori (Kanagawa), Tatsuo Nishizawa (Kanagawa), Yoshinari Ikeda (Kanagawa), Eiji Mochizuki (Kanagawa)
Primary Examiner: Elizabeth J Oswecki
Application Number: 29/406,718