Abstract: Highly ordered Ge films are prepared directly on single crystal Si substrates by applying an aqueous coating solution having Ge-bound polymer onto the substrate and then heating in a hydrogen-containing atmosphere. A coating solution was prepared by mixing water, a germanium compound, ethylenediaminetetraacetic acid, and polyethyleneimine to form a first aqueous solution and then subjecting the first aqueous solution to ultrafiltration.

Abstract: A selenium/Group 1b ink comprising, as initial components: a selenium component comprising selenium, an organic chalcogenide component having a formula selected from RZ—Z?R? and R2—SH, a Group 1b component and a liquid carrier; wherein Z and Z? are each independently selected from sulfur, selenium and tellurium; wherein R is selected from H, C1-20 alkyl group, a C6-20 aryl group, a C1-20 alkylhydroxy group, an arylether group and an alkylether group; wherein R? and R2 are selected from a C1-20 alkyl group, a C6-20 aryl group, a C1-20 alkylhydroxy group, an arylether group and an alkylether group; and wherein the selenium/Group 1b ink is a stable dispersion.

Abstract: The invention relates to a method for a preliminary metallizing treatment of galvanized or zinc alloy-coated steel surfaces or joined metallic parts that at least partly have zinc surfaces, in a surface treatment encompassing several process steps. In the disclosed method, metallic coats of especially a maximum of 100 mg/m2 of molybdenum, tungsten, cobalt, nickel, lead, tin, and/or preferably iron are produced on the treated zinc surfaces. Another embodiment of the invention relates to an uncoated or subsequently coated metallic part which has been subjected to the disclosed preliminary metallizing treatment as well as the use of such a part for making bodies during the production of automobiles, building ships, in the construction industry, and for manufacturing white products.

Abstract: Classes of liquid aminosilanes have been found which allow for the production of silicon carbo-nitride films of the general formula SixCyNz. These aminosilanes, in contrast, to some of the precursors employed heretofore, are liquid at room temperature and pressure allowing for convenient handling. In addition, the invention relates to a process for producing such films. The classes of compounds are generally represented by the formulas: and mixtures thereof, wherein R and R1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., alkyl, cycloalkyl with R and R1 in formula A also being combinable into a cyclic group, and R2 representing a single bond, (CH2)n, a ring, or SiH2.

Abstract: A selenium/Group Ib/Group 3a ink is provided, comprising, as initial components: (a) a selenium/Group Ib/Group 3a system which comprises a combination of, as initial components: a selenium; an organic chalcogenide component; a Group Ib containing substance; optionally, a bidentate thiol component; a Group 3a containing substance; and, (b) a liquid carrier component; wherein the selenium/Group Ib/Group 3a system is stably dispersed in the liquid carrier component. Also provided are methods of preparing the selenium/Group Ib/Group 3a ink and for using the selenium/Group Ib/Group 3a ink to deposit a selenium/Group Ib/Group 3a material on a substrate for use in the manufacture of a variety of chalcogenide containing semiconductor materials, such as, thin film transistors (TFTs), light emitting diodes (LEDs); and photoresponsive devices (e.g., electrophotography (e.g.

Abstract: A selenium ink comprising selenium stably dispersed in a liquid medium is provided, wherein the selenium ink is hydrazine free and hydrazinium free. Also provided are methods of preparing the selenium ink and of using the selenium ink to deposit selenium on a substrate for use in the manufacture of a variety of chalcogenide containing semiconductor materials, such as, thin film transistors (TFTs), light emitting diodes (LEDs); and photo responsive devices (e.g., electrophotography (e.g., laser printers and copiers), rectifiers, photographic exposure meters and photo voltaic cells) and chalcogenide containing phase change memory materials.

Abstract: The present invention provides an enhanced plating for electro and electroless plating. There is provided a method of plating a surface to be plated, the method comprises premixing a plating solution with additive. The additive comprises diamond particles is also provided.

Abstract: Compositions and methods for forming titanium-containing thin films are provided. The compositions comprise at least one precursor selected from the group consisting of (methylcyclopentadienyl)Ti(NMe2)3, (ethylcyclopentadienyl)Ti(NMe2)3, (isopropylcyclopentadienyl)Ti(NMe2)3, (methylcyclopentadienyl)Ti(NEt2)3, (methylcyclopentadienyl)Ti(NMeEt)3, (ethylcyclopentadienyl)Ti(NMeEt)3 and (methylcyclopentadienyl)Ti(OMe)3; and at least one liquification co-factor other than the at least one precursor; wherein the at least one liquification co-factor is present in amount sufficient to co-act with the at least one precursor, and in combination with the at least one precursor, forms a liquid composition.

Abstract: One aspect of the present invention is a deposition solution to deposit metals and metal alloys such as for fabrication of electronic devices. According to one embodiment, the deposition solution comprises metal ions and a pH adjustor. The pH adjustor comprises a functional group having a general formula (R1R2N)(R3R4N)C?N—R5 where: N is nitrogen; C is carbon; and R1, R2, R3, R4, and R5 are the same or different and represent hydrogen, alkyl group, aryl group, or alkylaryl group. Another aspect of the presented invention is a method of preparing deposition solutions. Still another aspect of the present invention is a method of fabricating electronic devices.

Abstract: A coating layer prepared from an aqueous electrodeposition coating composition comprising an electrodepositable binder, the binder comprising a sulfo or sulfamyl group-containing resin, provides corrosion protection to a metallic substrate.

Abstract: Described is a new process for applying a metal coating to a non-conductive substrate comprising the steps of (a) contacting the substrate with an activator comprising a noble metal/group IVA metal sol to obtain a treated substrate, (b) contacting said treated substrate with a composition comprising a solution of: (i) a Cu(II), Ag, Au or Ni soluble metal salt or mixtures thereof, (ii) 0.05 to 5 mol/l of a group IA metal hydroxide and (iii) a complexing agent for an ion of the metal of said metal salt, wherein an iminosuccinic acid or a derivative thereof is used as said complexing agent.

Abstract: Process for producing metal particle sols having a metal particle content of ?1 g/l, comprising the steps of a) reacting a metal salt solution with a solution containing hydroxide ions b) reacting the solution obtained from step a) with a reducing agent, wherein at least one of the solutions in step a) comprises a dispersing assistant, metal particles produced by the process and the use thereof.

Abstract: A composition comprising a source of metal ions and at least one suppressing agent obtainable by reacting a) an amine compound comprising active amino functional groups with b) a mixture of ethylene oxide and at least one compound selected from C3 and C4 alkylene oxides, said suppressing agent having a molecular weight Mw of 6000 g/mol or more.

Abstract: The present invention is an organoruthenium compound for use in production of a ruthenium or ruthenium compound thin film by chemical vapor deposition, including ruthenium and an arene group and norbornadiene both coordinated to the ruthenium and represented by the following formula. The present invention is an organoruthenium compound for use in chemical vapor deposition which does not require the coexistence of oxygen during the thin film formation, and moreover, is liquid at ordinary temperature, thereby having good handleability and recyclability. wherein the substituents, R1 to R6, of the arene group are each hydrogen or an alkyl group, and the total number of carbons of R1 to R6 (R1+R2+R3+R4+R5+R6) is 6 or less.

Abstract: A method of fabricating a composite powder includes forming a plurality of loose particles having discrete regions of a first material and discrete regions of a second material that is different than the first material. At least one of the first material and the second material includes a chemical precursor to a third, different material.

Abstract: Printable metal formulations, methods of making the formulations, and methods of coating or printing thin films from metal ink precursors are disclosed. The metal formulation generally includes one or more Group 4, 5, 6, 7, 8, 9, 10, 11, or 12 metal salts or metal complexes, one or more solvents adapted to facilitate coating and/or printing of the formulation, and one or more optional additives that form (only) gaseous or volatile byproducts upon reduction of the metal salt or metal complex to an elemental metal and/or alloy thereof. The formulation may be made by combining the metal salt(s) or metal complex(es) and the solvent(s), and dissolving the metal salt(s) or metal complex(es) in the solvent(s) to form the formulation. Thin films may be made by coating or printing the metal formulation on a substrate; removing the solvents to form a metal-containing precursor film; and reducing the metal-containing precursor film.

Abstract: A solder composition for forming a solder joint. The composition includes a powder material including a solid metal matrix material and a filler material. The solid metal matrix material includes one or more of tin-silver-copper (Sn—Ag—Cu), tin-copper (Sn—Cu), tin-copper-nickel (Sn—Cu—Ni), tin-silver (Sn—Ag), tin-silver-bismuth (Sn—Ag—Bi), tin-bismuth-indium (Sn—Bi—In), tin-gold (Au—Sn), tin-zinc (Sn—Zn), tin-zinc-bismuth (Sn—Zn—Bi), tin-bismuth-silver (Sn—Bi—Ag), tin (Sn), tin-indium (Sn—In), indium (In), indium-silver (In—Ag), and tin-lead (Sn—Pb). The filler material includes one or more of copper (Cu), gold (Au), nickel (Ni), nickel-gold (Ni—Au), carbon, silver (Ag), aluminum (Al), molybdenum (Mo), nickel (Ni) or nickel-gold (Ni—Au) coated carbon, the platinum group metals (PGM's), and their alloys.

Abstract: An electroless palladium plating solution includes a polar solvent, at least one palladium salt, at least one non-nitrogenated complexing agent, an alkaline adjusting agent that adjusts the plating solution to a pH of at least 8.0, and a reducing agent. The plating solution, which is used for forming a layer of palladium on a surface of a substrate, yields a substantially pure palladium deposit on the substrate. Precipitation of reduced palladium in the plating solution is substantially prevented.

Abstract: A formulation, comprising: a) at least one metal-ligand complex, wherein one or more ligands are selected from the group consisting of ?-diketonates, ?-ketoiminates, ?-ketoesterates, ?-diiminates, alkyls, carbonyls, alkyl carbonyls, cyclopentadienyls, pyrrolyls, alkoxides, amidinates, imidazolyls, and mixtures thereof; and the metal is selected from Group 2 to 16 elements of the Periodic Table of the Elements; and, b) at least one aminoether selected from the group consisting of R1R2NR3OR4NR5R6, R1OR4NR5R6, O(CH2CH2)2NR1, R1R2NR3N(CH2CH2)2O, R1R2NR3OR4N(CH2CH2)2O, O(CH2CH2)2NR1OR2N(CH2CH2)2O, and mixtures thereof, wherein R1-6 are independently selected from group consisting of C1-10 linear alkyl, C1-10 branched alkyl, C1-10 cyclic alkyl, C6-C10 aromatic, C1-10 alkylamine, C1-10 alkylaminoalkyl, C1-10 ether, C4-C10 cyclic ether, C4-C10 cyclic aminoether, and mixture thereof.

Abstract: The present invention is directed to the fabrication of rigid memory disks, including a metal plating composition which impedes deposition of non-metallic particles during a plating process. The plating composition includes at least one sulfated fatty acid ester additive, or mixtures or salts thereof, of formula: wherein R1 is selected from the group consisting of OH, OCH2, OCH2CH3, C1-C7 alkyl, linear or branched; R2 selected from H and C1-C7 alkyl, linear or branched; m=1 to about 5; n=2 to about 30; o=0 to about 10; M+ is a metal or pseudo metal ion or H+. The additive has a zeta potential which impedes deposit of non-metallic particles. The invention is further directed to a method for electroless plating utilizing the additive composition in a bath with at least a stabilizing agent, complexing agent and reducing agent and source of metal ions.

Abstract: Process for providing a protective coating to a metal surface by applying a nickel or tantalum plate layer to the surface and dispersing particles of a hard material such as diamond, alumina, vanadium nitride, tantalum carbide and/or tungsten carbide within the nickel or tantalum plate layer as the plating is occurring.

Abstract: There is provided a substitutional electroless gold plating solution and a method for forming a gold plating layer using the same. The substitutional electroless gold plating solution includes an organic solvent, and an organic acid-based gold salt dissociated from the organic solvent to generate gold ions. The substitutional electroless gold plating solution can form a gold plating layer having a uniform thickness and enhance bonding strength with a base metal. Further, the substitutional electroless gold plating solution can form a gold plating layer using various printing methods.

Abstract: A Group 3a ink, comprising, as initial components: a polyamine solvent; a Group 3a material/organic complex; and, a reducing agent; wherein the molar concentration of the reducing agent exceeds the molar concentration of the Group 3a material/organic complex; wherein the Group 3a ink is a stable dispersion and wherein the Group 3a ink is hydrazine and hydrazinium free. Also provided are methods of preparing the Group 3a ink and of using the Group 3a ink to deposit a Group 3a material on a substrate for use in a variety of semiconductor applications, such as metallization of silicon devices in VLSI technology, the growth of semiconducting III-V alloys, thin film transistors (TFTs), light emitting diodes (LEDs); and infrared detectors.

Abstract: Improved compositions are described for the protection of gas turbine parts at elevated temperatures. The compositions are of the MCrAlY type, wherein M is Nickel, or Nickel in combination with cobalt and/or iron. The compositions further comprise a lanthanide, a group 4 metal selected from hafnium, zirconium, titanium, or a combination of these, and optionally, a group 14 element selected from silicon and/or germanium. The combination results in improved Al retention properties. Also disclosed herein are articles comprising the coatings.

Abstract: A composition for deposition as a coating includes a matrix material having a molten fraction of between about 33% and about 90% by volume and a filler material interspersed within the matrix.

Abstract: One embodiment of the present invention is a method of electroless deposition of cap layers for fabricating an integrated circuit. The method includes controlling the composition of an electroless deposition bath so as to substantially maintain the electroless deposition properties of the bath. Other embodiments of the present invention include electroless deposition solutions. Still another embodiment of the present invention is a composition used to recondition an electroless deposition bath.

Abstract: The object of the present invention is to provide a metal plating method by a simple process, for example, on resins on which plating has been heretofore impossible. The metal plating method involves surface treating an article to be plated with a liquid prepared by mixing or reacting in advance an organic acid salt of a silane coupling agent containing an azole in a molecule, for example, a coupling agent which is an equimolar reaction product of imidazole and ?-glycidoxypropyltrimethoxysilane, and a noble metal compound, and then conducting electroless plating thereon.

Abstract: Microtubules are excellent candidates for the fabrication of nanostructures, including nanowires. A method for controlled nucleation and growth of microtubules on substrates (e.g., gold on a silicon wafer) is provided. The substrate is functionalized with a nucleating agent for microtubule growth. The method can be employed to generate nanoscale structures on substrates or between substrates by additional attachment of MT capture agents which function to capture the ends of growing MT to form connecting MT structures. The method can be used to form 2- and 3-D structures on or between substrates and can function to establish interconnects between nanoscale devices or molecular electronic devices and electrodes. A specific method for metallization of biological macromolecules and structures in provides which can be beneficially applied to metallized the MT formed by the growth and capture method. The metallization method is biologically benign and is particularly useful for copper metallization of MTs.

Abstract: Improved compositions are described for the protection of gas turbine parts at elevated temperatures. The compositions are of the MCrAlY type, wherein M is selected from nickel, or a combination of nickel with cobalt, iron, or combinations thereof. The compositions further comprise ruthenium, rhenium, or a combination thereof, a Group 4 metal (e.g., hafnium, zirconium, titanium), and can further include silicon and/or germanium, where the composition results in improved aluminum diffusion properties. Also disclosed herein are articles comprising the composition.

Abstract: Compositions and methods for forming metal films on semiconductor substrates are disclosed. One of the disclosed methods comprises: heating the semiconductor substrate to obtain a heated semiconductor substrate; exposing the heated semiconductor substrate to a composition containing at least one metal precursor comprising at least one ligand, an excess amount of neutral labile ligands, a supercritical solvent, and optionally at least one source of B, C, N, Si, P, and mixtures thereof; exposing the composition to a reducing agent and/or thermal energy at or near the heated semiconductor substrate; disassociating the at least one ligand from the metal precursor; and forming the metal film while minimizing formation of metal oxides.

Abstract: Zirconium precursors of the formulae Such precursors are liquids at room temperature, and can be employed in vapor deposition processes such as ALD to form zirconium-containing films, e.g., high k dielectric films on microelectronic device substrates. The zirconium precursors can be stabilized in such vapor deposition processes by thermal stabilization amine additives.

Abstract: A coating system and process for protecting component surfaces exposed to sulfur-containing environments at elevated temperatures. The coating system includes a sulfidation-resistant overlay coating that is predominantly niobium or molybdenum.

Abstract: Compositions and methods for forming metal films on semiconductor substrates are disclosed. One of the disclosed methods comprises: heating the semiconductor substrate to obtain a heated semiconductor substrate; exposing the heated semiconductor substrate to a composition containing at least one metal precursor comprising at least one ligand, an excess amount of neutral labile ligands, a supercritical solvent, and optionally at least one source of B, C, N, Si, P, and mixtures thereof; exposing the composition to a reducing agent and/or thermal energy at or near the heated semiconductor substrate; disassociating the at least one ligand from the metal precursor; and forming the metal film while minimizing formation of metal oxides.

Abstract: A composition and method are disclosed. The composition both conditions and activates a dielectric material for metal deposition. The metal may be deposited on the dielectric by electroless methods. The metallized dielectric may be used in electronic devices.

Abstract: An electroless pure palladium plating solution capable of forming pure palladium plating films having less plating film variations is provided. The electroless pure palladium plating solution comprises an aqueous solution containing (a) 0.001 to 0.5 mol/liter of a water-soluble palladium compound, (b) 0.005 to 10 mol/liter of at least two members selected from the group consisting of aliphatic carboxylic acids and water-soluble salts thereof, (c) 0.005 to 10 mol/liter of phosphoric acid and/or a phosphate, and (d) 0.005 to 10 mol/liter of sulfuric acid and/or a sulfate.

Abstract: The invention is directed to a solution and process for improving the solderability of a metal surface. In one embodiment, the invention is a silver deposit solution comprising an acid, a source of silver ions, and an additive selected from among pyrroles, triazoles, and tetrazoles, as well as derivatives and mixtures of those components. In another embodiment, the silver deposit solution also includes a 6-membered heterocyclic ring compound, wherein three members of the 6-membered heterocyclic ring are nitrogen atoms. Still another embodiment is a process for improving the solderability of a metal surface which involves applying a silver deposit solution as previously described to a metal surface.

Abstract: Providing a metal mold repair method and a metal mold repair paste agent which are capable of repairing cracks with simple work. A repair paste agent containing components that become an alloy is directly applied to a surface of a metal mold having a crack so as to cover the crack part, subsequently a surface of the repair paste agent is coated with an oxidation inhibitor and the repair paste agent is made to penetrate the inside of the crack by heating and becomes an alloy, thereby filling up the crack.

Abstract: Improved compositions are described for the protection of gas turbine parts at elevated temperatures. The compositions are of the MCrAlY type, wherein M is selected from nickel, or a combination of nickel with cobalt, iron, or combinations thereof. The compositions further comprise palladium, platinum, rhodium, or combinations thereof, hafnium, titanium, zirconium, or combinations thereof; and can further include silicon, germanium, or combinations thereof, wherein the composition results in improved Al retention properties. Also disclosed herein are articles comprising the coatings.

Abstract: An arc spray coating that is superior in both wear resistance and machinability, method of forming same, an arc spray wire used to form such a coating, and a cylinder block on whose bore inner surface is formed such an arc spray coating are provided. To this end, the arc spray coating contains Fe as a main component, 0.01% to 0.15% by weight of C, and at least 0.12% by weight of N, and the arc spray wire (wire) contains Fe as a main component, 0.01% to 0.2% by weight of C, and 0.25% to 1.7% by weight of Si, and may further contain at least 11% by weight of Cr as another embodiment.

Abstract: Methods and compositions that serve to both darken a zinc or other active! metal surface and impart corrosion-resistant properties thereto, are disclosed. The compositions include an aqueous solution containing about 0.1 percent to about 5 percent ammonium chloride and about 0.1 percent to about 5 percent ammonium molybdate. The compositions utilize particular ratios of concentrations of ammonium chloride and ammonium molybdate.

Abstract: A method for depositing a hard metallic chrome coating or similar metal by chemical vapor deposition on a metallic substrate, includes: a) preparing a solution containing, in an oxygen atom depleted solvent, i) a molecular compound of the bis(arene) family that's a precursor of the deposited metal with a decomposition temperature 300° C.-550° C., and ii) a chlorinated additive; b) introducing the solution as aerosol into a heated evaporator at a temperature between the solvent boiling temperature and the precursor decomposition temperature (PDT); and c) driving the vaporized aerosol from the evaporator towards a CVD reactor including a susceptor carrying the substrate, heated above the PDT, up to 550° C., the evaporator and CVD reactor being subjected to atmospheric pressure. This DLI-CVD method performed at low temperature and atmospheric pressure enables continuous industrial treatment of large metallic plates, producing hard, monolayer or nanostructured multilayer metallic coatings.

Abstract: A plating film is provided with enough hardness before anodic oxidation, which is hard to be damaged during handling, and also the production method of the plating film. This problem can be solved by an aluminum plating film with aluminum concentration of 98 wt. % or lower, and with a Vickers hardness of 250 or higher. Here, by containing oxygen, carbon, sulfur, and a halogen element as impurities, the hardness becomes higher. The impurity concentration is controlled by adjusting the current density, the plating temperature, or the plating bath composition.

Abstract: Process for producing metal particle sols having a metal particle content of ?1 g/l, comprising the steps of a) reacting a metal salt solution with a solution containing hydroxide ions b) reacting the solution obtained from step a) with a reducing agent, wherein at least one of the solutions in step a) comprises a dispersing assistant, metal particles produced by the process and the use thereof.

Abstract: Resistor compositions are disclosed, made from polymer thick film resistor formulations comprising a polyimide component, a sterically hindered hydrophobic epoxy component and a solvent component having a Hanson polar solubility parameter between 2.1 and 3.0 and having a normal boiling point between 210 and 260° C. The weight ratio of polyimide component (“A”) to epoxy component (“B”) is A:B, where A is between and including 1 to 15 and where B is 1.

Abstract: A method for depositing a high-k dielectric material on a semiconductor substrate is disclosed. The method includes applying a chemical bath to a surface of a substrate, rinsing the surface, applying a co-reactant bath to the surface of the substrate, and rinsing the surface. The chemical bath includes a metal precursor which includes at least a hafnium compound, an aluminium compound, a titanium compound, zirconium compound, a scandium compound, a yttrium compound or a lanthanide compound.

Abstract: The present invention relates to (1) a transparent coating film containing a layered titanate containing an organic cation derived from amines having a boiling point of 300° C. or lower as measured under an ambient pressure, and having an atomic ratio of nitrogen to titanium of 0.01 to 0.3; and (2) a process for producing a transparent coating film having an atomic ratio of nitrogen to titanium of 0.01 to 0.3, containing the steps of applying a solution containing an organic cation derived from amines having a boiling point of 300° C. or lower as measured under an ambient pressure, and a layered titanate onto a substrate; and heat-treating the thus applied solution at a temperature less than 450°C. The coating film exhibits a high hardness, an excellent transparency, a low photocatalytic activity and an excellent stability as well as a good adhesion property to a substrate.

Abstract: An aqueous suspension liquid of finely divided diamond particles comprising 0.05 to 160 parts by weight of a finely divided diamond particles in 1000 parts of water, wherein; (i) the finely divided diamond particles have an element composition consisting mainly of 72 to 89.5% by weight of carbon, 0.8 to 1.5% of hydrogen, 1.5 to 2.5% of nitrogen, and 10.5 to 25.0% of oxygen; (ii) and, almost all of said diamond particles are in the range of 2 nm to 50 nm in diameters thereof (80% or more by number average, 70% or more by weight average), (iii) and, said finely divided diamond particles exhibit a strongest peak of the intensity of the Bragg angle at 43.9° (2?±2°), strong and characteristic peaks at 73.5° (2?±2°)and 95° (2?±2°), a warped halo at 17° (2?±2°), and no peak at 26.5°, by X-ray diffraction (XRD) spectrum analysis using Cu—K? radiation when dried, (iv) and, specific surface area of said diamond particles when dry state powder is not smaller than 1.

Abstract: A slurry and slurry coating process for forming a diffusion aluminide coating on a substrate, including internal surfaces within the substrate. The process involves preparing a slurry of a powder containing a metallic aluminum alloy having a melting temperature higher than aluminum, an activator capable of forming a reactive halide vapor with the metallic aluminum, and a binder containing an organic polymer. The slurry is applied to surfaces of the substrate, which is then heated to burn off the binder, vaporize and react the activator with the metallic aluminum to form the halide vapor, react the halide vapor at the substrate surfaces to deposit aluminum on the surfaces, and diffuse the deposited aluminum into the surfaces to form a diffusion aluminide coating. The process can be tailored to selectively produce an inward or outward-type coating. The binder burns off to form an ash residue that can be readily removed.

Abstract: A non-particulate substrate having adhered thereto a coating composition comprising the reaction product of a transition metal compound such as niobium and a transition metal having electrons in the f orbital, and a silicon-containing material such as an organosilane or an organo(poly)siloxane. Reaction of the silicon-containing material with the transition metal compound results in a better adhering coating to the substrate than a comparable coating prepared from the silicon-containing material itself.

Abstract: This invention is directed to a process for electrolessly metallizing an article, as well as to a plating bath and the subsequent plated substrate. The process comprises contacting the surface of an article with an electroless metallizing bath which may be essentially free of toxic and/or heavy metals.