Polishes Patents (Class 106/3)
  • Patent number: 6299659
    Abstract: A polishing-material composition, for polishing of LSI devices, which is a polishing-material composition comprising water and cerium oxide which has been surface-treated with a coupling agent, wherein the maximum value is no greater than about 5 &mgr;m and the average value is about 0.01-1.0 &mgr;m in the secondary particle size distribution of the cerium oxide. Also, a polishing method for LSI devices which employs the polishing-material composition.
    Type: Grant
    Filed: May 4, 2000
    Date of Patent: October 9, 2001
    Assignee: Showa Denko K.K.
    Inventors: Takanori Kido, Fumio Tsujino, Kagetaka Ichikawa, Nobuo Uotani
  • Patent number: 6290736
    Abstract: A slurry and CMP process to polish a noble metal surface is provided. The slurry and polishing process are used to form a damascene, or dual damascene noble metal inlay. Such as inlay is useful is forming an integrated circuit ferroelectric capacitor electrode. The slurry includes a halogen, such as bromine, in a basic aqueous solution to chemically react with the noble metal. With an abrasive added, the slurry is used to polish and remove noble metals from a wafer surface during a CMP process.
    Type: Grant
    Filed: February 9, 1999
    Date of Patent: September 18, 2001
    Assignee: Sharp Laboratories of America, Inc.
    Inventor: David R. Evans
  • Publication number: 20010020348
    Abstract: A abrasive for metal comprising particle having a functional group capable of trapping a metal ion, a process for producing the abrasive, and a polishing composition comprising the abrasive, an oxidizing agent and water, are provided.
    Type: Application
    Filed: January 9, 2001
    Publication date: September 13, 2001
    Inventors: Kazumasa Ueda, Masayuki Takashima
  • Publication number: 20010017007
    Abstract: A polishing composition comprising silica particles, water, and Fe salt and/or Al salt of a polyaminocarboxylic acid; a polishing process comprising applying the polishing composition; a process for manufacturing a magnetic disk substrate, comprising the step of polishing a substrate with the polishing composition; a magnetic disk substrate manufactured by applying the polishing composition.
    Type: Application
    Filed: January 31, 2001
    Publication date: August 30, 2001
    Inventors: Toshiya Hagihara, Koichi Naito, Shigeo Fujii
  • Patent number: 6280490
    Abstract: A polishing composition for a memory hard disk, which comprises the following components (a) to (d): (a) from 0.1 to 50 wt %, based on the total amount of the polishing composition, of at least one abrasive selected from the group consisting of silicon dioxide, aluminum oxide, cerium oxide, zirconium oxide, titanium oxide, silicon nitride and manganese dioxide, (b) from 0.001 to 10 wt %, based on the total amount of the polishing composition, of at least one iron salt selected from the group consisting of iron nitrate, iron sulfate, ammonium iron sulfate, iron perchlorate, iron chloride, iron citrate, ammonium iron titrate, iron oxalate, ammonium iron oxalate and an iron chelate complex salt of ethylenediaminetetraacetic acid, (c) from 0.01 to 30 wt %, based on the total amount of the polishing composition, of at least one peroxydisulfate salt selected from the group consisting of ammonium peroxydisulfate, potassium peroxydisulfate and sodium peroxydisulfate, and (d) water.
    Type: Grant
    Filed: September 27, 1999
    Date of Patent: August 28, 2001
    Assignee: Fujimi America Inc.
    Inventors: W. Scott Rader, David M. Shemo, Toshiki Owaki
  • Patent number: 6280489
    Abstract: Polishing compositions with phosphoric ester added to a suspension containing abrasive particles can have an improved ability to have the abrasive particles dispersed again after they are left for an extended period of time such that the particles may have condensed into aggregates. Those with abrasive particles such as diamond powder dispersed in an aqueous solution containing a glycol compound, metallic salt of a higher aliphatic acid and phosphoric ester have an improved polishing ability.
    Type: Grant
    Filed: October 29, 1999
    Date of Patent: August 28, 2001
    Assignee: Nihon Micro Coating Co., Ltd.
    Inventors: Yuji Horie, Hiromitsu Okuyama, Mitsuo Otohata
  • Patent number: 6261476
    Abstract: A hybrid slurry mixture that polishes substrates' surfaces. The hybrid slurry includes, by weight percent, 1 to 30 primary polishing particles, 1 to 50 dispersed colloidal particles, 1 to 40 oxidizer and balance water. The primary polishing particles are metal compounds selected from the group consisting of oxides, nitrides, carbides and borides. The primary polishing particles have a particle size from about 0.1 to 2 &mgr;m mean diameter. The dispersed colloidal particles are at least one oxide selected from the group consisting of alumina and silica. The dispersed colloidal particles have a particle size from about 2 to 500 nm mean diameter.
    Type: Grant
    Filed: March 21, 2000
    Date of Patent: July 17, 2001
    Assignee: Praxair S. T. Technology, Inc.
    Inventors: Doris Kwok, James Kent Knapp
  • Patent number: 6258721
    Abstract: The multistage process for the chemical-mechanical planarization (CMP) of Cu commences with forming a primary aqueous or non-aqueous (e.g., using alcohols and ketones as non-aqueous carriers) slurry from (i) between about 0 and 7 wt-% of an oxidizer, (ii) between 0 and 7 wt-% of a chelating agent, (iii) between about 0 and 5 wt-% of a surfactant, (iv) between about 0.001 and 5 wt-% diamond particles having an average particle size not substantially above about 0.4 &mgr;, and (v) an amount of a pH adjustment agent so that the aqueous slurry has a pH of between about 3 and 10, and advantageously about 5). The Cu of the semiconductor wafer then is subjected to CMP using the primary aqueous slurry and then is subjected to a cleaning operation. Next, a secondary aqueous slurry from (i) between about 0 and 5 wt-% of an a hydroxyl amine compound, (ii) between about 0 and 7 wt-% of a chelating agent, (iii) between about 0 and 5 wt-% of a surfactant, (iv) between about 0.
    Type: Grant
    Filed: December 27, 1999
    Date of Patent: July 10, 2001
    Assignee: General Electric Company
    Inventors: Yuzhuo Li, David Bruce Cerutti, Donald Joseph Buckley, Jr., Earl Royce Tyre, Jr., Jason J. Keleher, Richard J. Uriarte, Ferenc Horkay
  • Patent number: 6258140
    Abstract: A polishing composition for polishing a memory hard disk, which comprises the following components (a) to (d): (a) from 0.1 to 50 wt %, based on the total amount of the polishing composition, of at least one abrasive selected from the group consisting of silicon dioxide, aluminum oxide, cerium oxide, zirconium oxide, titanium oxide, silicon nitride and manganese dioxide, (b) from 0.0001 to 3.0 wt %, based on the total amount of the polishing composition, of at least one polishing resistance-reducing agent selected from the group consisting of a surfactant, a water-soluble polymer and a polyelectrolyte, (c) from 0.001 to 40 wt %, based on the total amount of the polishing composition, of at least one polishing accelerator selected from the group consisting of an inorganic acid, an organic acid and their aluminum, iron, nickel and cobalt salts, and (d) water.
    Type: Grant
    Filed: September 27, 1999
    Date of Patent: July 10, 2001
    Assignee: Fujimi America Inc.
    Inventors: David M. Shemo, W. Scott Rader, Toshiki Owaki
  • Patent number: 6258137
    Abstract: CMP processes and products employ aluminas comprising alpha alumina particles having a particle width of less than 50 nanometers and a surface area of at least 50 m2/gm.
    Type: Grant
    Filed: October 6, 1999
    Date of Patent: July 10, 2001
    Assignee: Saint-Gobain Industrial Ceramics, Inc.
    Inventors: Ajay K. Garg, Brahmanandam V. Tanikella, William R. Delaney
  • Publication number: 20010006031
    Abstract: In forming a damascene interconnect made of a copper-containing metal on a barrier metal film made of a tantalum-containing metal, erosion is prevented during chemical mechanical polishing of the copper-containing metal film, by using a polishing slurry comprising at least an alkanolamine represented by general formula (1):
    Type: Application
    Filed: December 19, 2000
    Publication date: July 5, 2001
    Inventors: Yasuaki Tsuchiya, Tetsuyuki Itakura, Shin Sakurai
  • Patent number: 6251150
    Abstract: The present invention provides a slurry composition for chemical mechanical polishing comprising spinel particles having the formula AO•xZ2O3 wherein A is at least one divalent cation, Z is at least one trivalent cation, and 0.01≦x≦100. The present invention also includes a method of chemical mechanical polishing the surface of a substrate using slurry compositions that include these spinel particles. The slurry compositions of the present invention provide the desired level of planarization and selectivity for both metal and oxide surfaces. In addition, the slurry compositions of the invention can be prepared such that they are substantially free of alpha phase alumina particles and other high hardness particles to produce a scratch-free polished surface.
    Type: Grant
    Filed: May 27, 1999
    Date of Patent: June 26, 2001
    Assignees: EKC Technology, Inc., Baikowski Chimie
    Inventors: Robert James Small, Maria Louise Peterson, Tuan Troung, Lionel Bonneau, Jean Claude Drouget
  • Publication number: 20010003885
    Abstract: The present invention relates to a powder composition and to a method for polishing stone, in particular granite, said method making use of said powder composition.
    Type: Application
    Filed: December 4, 2000
    Publication date: June 21, 2001
    Inventors: Wing Thye Lum, Whee Huat Tan
  • Patent number: 6248144
    Abstract: A process for producing a polishing composition, which comprises preliminarily adjusting water to pH 2-4, adding from 40 to 60 wt % of fumed silica to the water under high shearing force, adding water to lower the viscosity to 2-10000 cps, stirring the mixture under low shearing force for at least 5 minutes, adding water to lower the fumed silica concentration to 10-38 wt %, and adding a basic substance under vigorous stirring to raise the pH to 9-12.
    Type: Grant
    Filed: July 14, 2000
    Date of Patent: June 19, 2001
    Assignee: Fujimi Incorporated
    Inventors: Kazusei Tamai, Katsuyoshi Ina
  • Patent number: 6248143
    Abstract: An abrasive composition for polishing glass, containing a basic salt of magnesium. Also disclosed is a method for polishing glass with the abrasive composition.
    Type: Grant
    Filed: January 27, 1999
    Date of Patent: June 19, 2001
    Assignee: Showa Denko Kabushiki Kaisha
    Inventors: Tomoyuki Masuda, Hiroshi Mizukami, Nobuhiko Ohara, Yutaka Yamauchi
  • Patent number: 6238469
    Abstract: A slurry containing abrasive particles and a dual-valent rare earth ion or suspension of its colloidal hydroxide is especially useful for polishing surfaces, including those used in microelectronics. A suspension of a colloidal dual-valent rare earth hydroxide is especially useful for polishing silica.
    Type: Grant
    Filed: January 7, 1999
    Date of Patent: May 29, 2001
    Assignee: International Business Machines Corporation
    Inventor: Maria Ronay
  • Patent number: 6235071
    Abstract: The present invention provides a chemical mechanical polishing method for polishing a soft metal by supplying a polishing surface of the soft metal with a novel polishing slurry which includes at least both alumina particles as polishing particles and hydrogen peroxide as oxidizing agent, wherein the content of the alumina particles is in the range of 2-10% by weight of the total amount of the polishing slurry.
    Type: Grant
    Filed: February 26, 1999
    Date of Patent: May 22, 2001
    Assignee: NEC Corporation
    Inventors: Yasuaki Tsuchiya, Mieko Suzuki
  • Patent number: 6221433
    Abstract: Gloss and ease of application of sprayable aqueous organopolysiloxane vinyl protectant emulsions are both improved by the addition of a gloss-improving additive. Protectants may be formulated to achieve higher gloss with the same amount of active organopolysiloxane or the same or higher gloss with less organopolysiloxane. Preferred gloss-improving additives are water soluble organic viscosifiers and/or minor amounts of inorganic, viscosity-increasing particulate solids.
    Type: Grant
    Filed: April 24, 1998
    Date of Patent: April 24, 2001
    Assignee: Wacker Silicones Corporation
    Inventors: Ronald Lee Muntz, Michael Dean Lowery, Bryan Eric Fry
  • Patent number: 6221118
    Abstract: This invention provides a cerium oxide abrasive with which the surfaces of substrates such as SiO2 insulating films can be polished at a high rate without causing scratches. The abrasive of the present invention comprises a slurry comprising cerium oxide particles whose primary particles have a diameter of from 10 nm to 600 nm and a median diameter of from 30 nm to 250 nm and slurry particles have a median diameter of from 150 nm to 600 nm and a maximum diameter of 3,000 nm or smaller, the cerium oxide particles being dispersed in a medium.
    Type: Grant
    Filed: August 10, 1999
    Date of Patent: April 24, 2001
    Assignee: Hitachi Chemical Company, Ltd.
    Inventors: Masato Yoshida, Toranosuke Ashizawa, Hiroki Terazaki, Yasushi Kurata, Jun Matsuzawa, Kiyohito Tanno, Yuuto Ootuki
  • Patent number: 6221119
    Abstract: A slurry in accordance with the invention comprises CeO2 polishing particles and sodium polyacrylate in an aqueous solution. This slurry is used to polish a glass or glass ceramic substrate. I have discovered that adding sodium polyacrylate to a CeO2 slurry improves the polishing rate without causing a major negative impact on the slurry stability or redispersibility. In addition, the addition of the sodium polyacrylate does not cause a great deal of foaming. This polishing process can be used to prepare substrates for the manufacture of magnetic disks.
    Type: Grant
    Filed: July 14, 1999
    Date of Patent: April 24, 2001
    Assignee: Komag, Inc.
    Inventor: Andrew M. Homola
  • Patent number: 6214098
    Abstract: One embodiment of the present invention includes a chemical-mechanical polishing (CMP) slurry. The slurry is comprised of one or more ferrocenium salts that is or are reduced, during use, to ferrocene. The slurry also includes an abrasive and a concentration of hydronium ions effective to impart a pH of less than 7.
    Type: Grant
    Filed: February 15, 2000
    Date of Patent: April 10, 2001
    Assignee: Intel Corporation
    Inventor: Kevin J. Lee
  • Patent number: 6206956
    Abstract: Gloss and ease of application of sprayable aqueous organopolysiloxane vinyl protectant emulsions are both improved by the addition of a gloss-improving additive. Protectants may be formulated to achieve higher gloss with the same amount of active organopolysiloxane or the same or higher gloss with less organopolysiloxane. Preferred gloss-improving additives are water soluble organic viscosifiers and/or minor amounts of inorganic, viscosity-increasing particulate solids.
    Type: Grant
    Filed: February 12, 1999
    Date of Patent: March 27, 2001
    Assignee: Wacker Silicones Corporation
    Inventors: Ronald L. Muntz, Michael D. Lowery, Bryan E. Fry
  • Patent number: 6193791
    Abstract: A polish composition comprising a base component and a alkylated fluorochemical oligomer. The oligomer comprises a fluorochemical oligomeric portion, an aliphatic moiety, and a linking group which links the two. The base component of the polish composition may be a wax, a silicone oil, or a mixture of the two.
    Type: Grant
    Filed: September 24, 1999
    Date of Patent: February 27, 2001
    Assignee: 3M Innovative Properties Company
    Inventors: Steven J. Vander Louw, Chetan P. Jariwala
  • Patent number: 6193790
    Abstract: A polishing composition for memory hard disks, which comprises water and at least one abrasive selected from the group consisting of aluminum oxide, silicon dioxide, cerium oxide, zirconium oxide, titanium oxide, silicon nitride and manganese dioxide, and which further contains succinic acid or its salt dissolved in the composition.
    Type: Grant
    Filed: June 4, 1999
    Date of Patent: February 27, 2001
    Assignee: Fujimi Incorporated
    Inventor: Katsumi Tani
  • Patent number: 6190443
    Abstract: A polishing composition for polishing a memory hard disk, which comprises water and at least one abrasive selected from the group consisting of silicon dioxide, aluminum oxide, cerium oxide, zirconium oxide, titanium oxide, silicon nitride and manganese dioxide and which further contains an iron chelate complex dissolved in the composition, the iron chelate complex having a nitrogen-containing compound as a ligand, and the pH of the entire composition being from 6 to 10.
    Type: Grant
    Filed: August 31, 1999
    Date of Patent: February 20, 2001
    Assignee: Fujimi Incorporated
    Inventors: Keigo Ohashi, Hitoshi Kodama, Noritaka Yokomichi
  • Patent number: 6176887
    Abstract: A silicate dental ceramic-based blasting medium for the improvement of the adhesive bond between fire-on ceramic and alloy. In contrast to the traditionally used Al2O3 blasting medium, the complete sealing of the alloy-ceramic contact layer is guaranteed. In this way, the penetration of moisture (from the milieu of the mouth) in the contact layer is prevented. The phenomenon of bubble formation known from practice in dental work worn on a trial basis can thus be stopped after correction firing.
    Type: Grant
    Filed: July 29, 1999
    Date of Patent: January 23, 2001
    Assignees: Degussa H{umlaut over (u)}ls Aktiengesellschaft, Ducera Dental-GmbH & Co. KG
    Inventor: Ottmar Komma
  • Patent number: 6172025
    Abstract: A vehicle cleaning solution is provided including a predetermined amount of mineral spirits and a predetermined amount of jeweler's rouge mixed with the mineral spirits for cleaning various vehicular components.
    Type: Grant
    Filed: April 23, 1998
    Date of Patent: January 9, 2001
    Inventors: Bobby C. Johnson, Henry D. Shook
  • Patent number: 6168640
    Abstract: A method of making a chemical-mechanical polishing slurry includes mixing a ferric salt oxidizer with a solution to produce a mixture with a dissolved ferric salt oxidizer, filtering the mixture to remove most preexisting particles therein that exceed a selected particle size, adding a suspension agent to the mixture, and adding abrasive particles to the mixture after filtering the mixture. Advantageously, when polishing occurs, scratching by the preexisting particles is dramatically reduced.
    Type: Grant
    Filed: March 29, 1999
    Date of Patent: January 2, 2001
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Peter A. Burke, Peter J. Beckage
  • Patent number: 6152976
    Abstract: An abrasive composition for polishing a substrate for a magnetic recording disc is described, which comprises finely divided titanium oxide particles, an abrasion promoter, an optional water-soluble oxidizing agent, and water. This abrasive composition is used for polishing a substrate for a magnetic recording disc by a process wherein the substrate is polished with a pad while the abrasive composition is supplied between the substrate and the pad, and at least one of the pad and the substrate is rotated. The contents of the finely divided titanium oxide particles, the abrasion promoter and the optional water-soluble oxidizing agent are 2-20 wt. %, 1-20 wt. % and up to 10 wt. %, respectively, based on the weight of the abrasive composition as used for polishing the substrate.
    Type: Grant
    Filed: August 27, 1997
    Date of Patent: November 28, 2000
    Assignee: Showa Denko Kabushiki Kaisha
    Inventors: Ken Ishitobi, Norihiko Miyata
  • Patent number: 6126514
    Abstract: A polishing slurry includes polishing abrasive grains and a polishing liquid containing at least one kind of a fatty acid and a fatty acid ester. The fatty acid is at least one kind selected from a group consisting of oleic acid, myristic acid, and stearic acid. The fatty acid ester is at least one kind selected from a group consisting of butyl stearate, hexyl stearate, heptyl stearate, butyl oleate, hexyl oleate, heptyl oleate, butyl myristate, hexyl myristate, and heptyl myristate. The polishing slurry is used for polishing a surface to be polished of a substance to be polished such as a wafer by bringing the surface to be polished into slide-contact with a polishing surface of a polishing plate mounted to a polishing table while supplying the polishing slurry on the polishing surface.
    Type: Grant
    Filed: March 9, 1999
    Date of Patent: October 3, 2000
    Assignee: Sony Corporation
    Inventor: Masakazu Muroyama
  • Patent number: 6120571
    Abstract: A polishing agent for semiconductor, comprising cerium oxide particles having a weight average particle size of from 0.1 to 0.35 .mu.m and a crystallite size of from 150 to 600 .ANG..
    Type: Grant
    Filed: April 16, 1998
    Date of Patent: September 19, 2000
    Assignee: Seimi Chemical Co., Ltd.
    Inventors: Ryohei Aihara, Kazuaki Endoh, Katsuyuki Tsugita
  • Patent number: 6117783
    Abstract: A composition for chemical mechanical polishing includes a slurry. A sufficient amount of a selectively oxidizing and reducing compound is provided in the composition to produce a differential removal of a metal and a dielectric material. A pH adjusting compound adjusts the pH of the composition to provide a pH that makes the selectively oxidizing and reducing compound provide the differential removal of the metal and the dielectric material. A composition for chemical mechanical polishing is improved by including an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material.
    Type: Grant
    Filed: March 23, 1998
    Date of Patent: September 12, 2000
    Assignee: EKC Technology, Inc.
    Inventors: Robert J. Small, Laurence McGhee, David J. Maloney, Maria L. Peterson
  • Patent number: 6117220
    Abstract: A polishing composition for a memory hard disc, which comprises the following components (a) to (d):(a) water,(b) at least one compound selected from the group consisting of a polystyrenesulfonic acid, and its salts,(c) a compound selected from the group consisting of an inorganic acid and an organic acid, and their salts, other than component (b), and(d) at least one abrasive selected from the group consisting of aluminum oxide, silicon dioxide, cerium oxide, zirconium oxide, titanium oxide, silicon nitride and manganese dioxide.
    Type: Grant
    Filed: November 16, 1999
    Date of Patent: September 12, 2000
    Assignees: Fujimi Incorporated, Toho Chemical Industry Co., Ltd.
    Inventors: Hitoshi Kodama, Toshiki Owaki, Katsumi Tani, Noritaka Yokomichi, Takashi Tokuue, Norio Fujioka, Tetsuya Sayama
  • Patent number: 6106607
    Abstract: A water repellent composition for gypsum containing masonry materials is disclosed. The composition contains as organohydrogensiloxane and polyvinyl alcohol, the combination of which provides unexpectedly high water repellency.
    Type: Grant
    Filed: September 10, 1999
    Date of Patent: August 22, 2000
    Assignee: Dow Corning Corporation
    Inventors: Anh Be, Paul David Fisher
  • Patent number: 6106380
    Abstract: A method and apparatus for finishing a workpiece surface using MR fluid is provided wherein the workpiece is positioned near a carrier surface such that a converging gap is defined between a portion of the workpiece surface and the carrier surface; a magnetic field is applied substantially at said gap; a flow of stiffened MR fluid is introduced into said converging gap such that a work zone is created in the MR fluid to form a sub-aperture transient finishing tool for engaging and causing material removal at the portion of the workpiece surface; and the workpiece or the work zone is moved relative to the other to expose different portions of the workpiece surface to the work zone for predetermined time periods to selectively finish said portions of said workpiece surface to predetermined degrees.
    Type: Grant
    Filed: February 19, 1998
    Date of Patent: August 22, 2000
    Assignee: Byelocorp Scientific, Inc.
    Inventors: Stephen David Jacobs, William Kordonski, Igor Victorovich Prokhorov, Donald Golini, Gennadii Rafailovich Gorodkin, Tvasta David Strafford
  • Patent number: 6099604
    Abstract: A slurry composition enhances the removal of polish-resistant surface moieties from the surface of a semiconductor wafer during chemical-mechanical polishing. The slurry composition is a mixture including a solvent, a plurality of abrasive particles, and a chelating agent. The abrasive particles abrade the surface of the wafer to remove surface moieties and underlying material. The chelating agent is selected to react with polish-resistant surface moieties on the surface of the wafer surface, to thereby render the surface moieties easier to remove from the surface layer with substantially non-aggressive chemical-mechanical polishing techniques. In operation, the surface moieties and the underlying bulk material are removed by a combination of the chemical effects of the chelating agent and the mechanical effects of the abrasive particles.
    Type: Grant
    Filed: August 21, 1997
    Date of Patent: August 8, 2000
    Assignee: Micron Technology, Inc.
    Inventors: Gurtej Singh Sandhu, Donald Westmoreland, Daniel Koos
  • Patent number: 6090767
    Abstract: A cleaning and protectant composition for automotive painted surfaces is provided. The composition includes a low-foaming nonionic surfactant, a silicone antifoam emulsion, and a volatile silicone fluid. A method of cleaning and protecting an automotive surface includes applying the composition to the surface.
    Type: Grant
    Filed: October 9, 1998
    Date of Patent: July 18, 2000
    Assignee: Amway Corporation
    Inventors: Ronald C. Jackson, Robert D. Faber
  • Patent number: 6077337
    Abstract: One embodiment of the present invention includes a chemical-mechanical polishing (CMP) slurry. The slurry is comprised of one or more ferrocenium salts that is or are reduced, during use, to ferrocene. The slurry also includes an abrasive and a concentration of hydronium ions effective to impart a pH of less than 7.
    Type: Grant
    Filed: December 1, 1998
    Date of Patent: June 20, 2000
    Assignee: Intel Corporation
    Inventor: Kevin J. Lee
  • Patent number: 6048577
    Abstract: Nano-sized powders of alpha alumina can be obtained from a boehmite gel doped with a barrier-forming material such as silica that is then dried, fired and comminuted to powder form.
    Type: Grant
    Filed: February 4, 1994
    Date of Patent: April 11, 2000
    Assignee: Norton Company
    Inventor: Ajay K. Garg
  • Patent number: 6045605
    Abstract: An abrasive material is prepared by dispersing silicon nitride particles acting as abrasive particles in a solvent such as a pure water or an ultra pure water, followed by adding an adsorptive stickable to the abrasive particles to the dispersion. The resultant abrasive material permits diminishing the polishing rate of a silicon nitride film used as a stopper film, with the result that a CVD SiO.sub.2 film to be polished is selectively polished relative to the Si.sub.3 N.sub.4 film used as the stopper film. This makes it possible to make the stopper film as thin as possible and permits the CVD SiO.sub.2 film to be flattened efficiently without bringing about a dishing problem.
    Type: Grant
    Filed: May 14, 1998
    Date of Patent: April 4, 2000
    Assignees: Kabushiki Kaisha Toshiba, Tokuyama Corporation
    Inventors: Kenji Doi, Naoto Miyashita, Masahiro Abe, Hiroyuki Kohno, Hiroshi Kato, Kazuhiko Hayashi
  • Patent number: 6027669
    Abstract: A polishing composition comprising fumed silica, a basic potassium compound and water, of which the specific electric conductivity is from 100 to 5,500 .mu.S/cm.
    Type: Grant
    Filed: December 5, 1997
    Date of Patent: February 22, 2000
    Assignee: Fujimi Incorporated
    Inventors: Shirou Miura, Atsunori Kawamura, Kazusei Tamai
  • Patent number: 6027554
    Abstract: A polishing composition comprising silicon nitride fine powder, water and an acid.
    Type: Grant
    Filed: October 14, 1997
    Date of Patent: February 22, 2000
    Assignee: Fujimi Incorporated
    Inventors: Hitoshi Kodama, Satoshi Suzumura, Noritaka Yokomichi, Shirou Miura, Hideki Otake, Atsunori Kawamura, Masatoki Ito
  • Patent number: 6022400
    Abstract: Surfaces of substrates, typically semiconductor device substrates, are polished with a polishing agent comprising polishing abrasive grains of a metal oxide (e.g. cerium oxide, zirconium oxide or manganese oxide) having a hydrophilic surface and a surface potential (zeta potential) of not more than 50 mV at pH 7 in absolute value, preferably polishing abrasive grains having hydrophilic groups, preferably hydroxyl groups, at the extremities and then cleaned with an aqueous cleaning solution comprising pure water. The polishing abrasive grains remaining on the polished substrate surface can be removed to a satisfactory degree therefrom by simple cleaning using the aqueous cleaning solution only.
    Type: Grant
    Filed: May 19, 1998
    Date of Patent: February 8, 2000
    Assignee: Nippon Steel Corporation
    Inventors: Hirohiko Izumi, Masatoshi Sakai, Michihiro Yoshinaga
  • Patent number: 6022837
    Abstract: A composition for rinsing a memory hard disc, which comprises water and an additive selected from the group consisting of an oxo-acid, an oxo-acid salt and a chloride.
    Type: Grant
    Filed: November 17, 1997
    Date of Patent: February 8, 2000
    Assignee: Fujimi Incorporated
    Inventor: Toshiki Oowaki
  • Patent number: 6019806
    Abstract: This invention is for an improved slurry for shallow trench isolation processing in chemical mechanical polishing of semiconductor devices. The oxide/nitride selectivity is enhanced by increasing the pH of the slurry, increasing the solids content of the slurry and/or by adding a fluoride salt to the slurry. With these modifications, selectivity of greater than 10:1 can be attained.
    Type: Grant
    Filed: January 8, 1998
    Date of Patent: February 1, 2000
    Inventors: Jennifer A. Sees, Lindsey H. Hall, Jagdish Prasad, Ashutosh Misra
  • Patent number: 6013323
    Abstract: The present invention relates to an aqueous based, gelled silicone compositions, more particularly waxes and protectants, which are substantially free of volatile organic solvents. The silicone gel wax is useful for protecting a variety of painted surfaces, particularly painted metal surfaces such as car exteriors. The silicone gel protectant is useful for protecting and enhancing the appearance of vinyl, leather, rubber and plastic surfaces such as found in car interiors, car trim and car bumpers.
    Type: Grant
    Filed: October 30, 1998
    Date of Patent: January 11, 2000
    Inventors: Donna W. Klayder, David A. Lupyan
  • Patent number: 6011104
    Abstract: Footware dressings containing fluorocarbons in a carrier base plus optional colorants and additives. These dressings create a relatively slick and non-stick surface with excellent "contamination" resistance.
    Type: Grant
    Filed: January 20, 1998
    Date of Patent: January 4, 2000
    Inventor: Joseph D. Udy
  • Patent number: 6007592
    Abstract: A polishing composition for an aluminum disk includes water, an alumina abrasive agent and a polishing accelerator. The polishing accelerator is preferably basic aluminum nitrate. A process for polishing an aluminum disk using the polishing composition is also provided.
    Type: Grant
    Filed: November 3, 1997
    Date of Patent: December 28, 1999
    Assignee: Nissan Chemical Industries, Ltd.
    Inventors: Toshio Kasai, Isao Ota, Takao Kaga, Tohru Nishimura
  • Patent number: 6001730
    Abstract: A method for forming a copper interconnect on an integrated circuit (IC) begins by forming a dielectric layer (20) having an opening. A tantalum-based barrier layer (21), such as TaN or TaSiN, is formed within the opening in the layer (20). A copper layer (22) is formed over the barrier layer (21). A first CMP process is used to polish the copper (22) to expose portions of the barrier (21). A second CMP process which is different from the first CMP process is then used to polish exposed portions of the layer (21) faster than the dielectric layer (20) or the copper layer (22). After this two-step CMP process, a copper interconnect having a tantalum-based barrier is formed across the integrated circuit substrate (12).
    Type: Grant
    Filed: October 20, 1997
    Date of Patent: December 14, 1999
    Assignee: Motorola, Inc.
    Inventors: Janos Farkas, Rajeev Bajaj, Melissa Freeman, David K. Watts, Sanjit Das
  • Patent number: 5997620
    Abstract: A polishing composition for polishing a memory hard disk comprising water and at least one abrasive selected from the group consisting of silicon dioxide, aluminum oxide, cerium oxide, zirconium oxide, titanium oxide, silicon nitride and manganese dioxide, which further contains an iron compound dissolved in the composition, said iron compound being selected from the group consisting of iron(III) nitrate, iron(III) sulfate, ammonium iron(III) sulfate, iron(III) perchlorate and an ion salt of an organic acid.
    Type: Grant
    Filed: November 27, 1998
    Date of Patent: December 7, 1999
    Assignee: Fujimi Incorporated
    Inventors: Hitoshi Kodama, Hideki Otake, Keigo Ohashi