Abstract: A slurry in accordance with the invention comprises CeO2 polishing particles and sodium polyacrylate in an aqueous solution. This slurry is used to polish a glass or glass ceramic substrate. I have discovered that adding sodium polyacrylate to a CeO2 slurry improves the polishing rate without causing a major negative impact on the slurry stability or redispersibility. In addition, the addition of the sodium polyacrylate does not cause a great deal of foaming. This polishing process can be used to prepare substrates for the manufacture of magnetic disks.

Abstract: One embodiment of the present invention includes a chemical-mechanical polishing (CMP) slurry. The slurry is comprised of one or more ferrocenium salts that is or are reduced, during use, to ferrocene. The slurry also includes an abrasive and a concentration of hydronium ions effective to impart a pH of less than 7.

Abstract: Gloss and ease of application of sprayable aqueous organopolysiloxane vinyl protectant emulsions are both improved by the addition of a gloss-improving additive. Protectants may be formulated to achieve higher gloss with the same amount of active organopolysiloxane or the same or higher gloss with less organopolysiloxane. Preferred gloss-improving additives are water soluble organic viscosifiers and/or minor amounts of inorganic, viscosity-increasing particulate solids.

Abstract: A polishing composition for memory hard disks, which comprises water and at least one abrasive selected from the group consisting of aluminum oxide, silicon dioxide, cerium oxide, zirconium oxide, titanium oxide, silicon nitride and manganese dioxide, and which further contains succinic acid or its salt dissolved in the composition.

Abstract: A polish composition comprising a base component and a alkylated fluorochemical oligomer. The oligomer comprises a fluorochemical oligomeric portion, an aliphatic moiety, and a linking group which links the two. The base component of the polish composition may be a wax, a silicone oil, or a mixture of the two.

Abstract: A polishing composition for polishing a memory hard disk, which comprises water and at least one abrasive selected from the group consisting of silicon dioxide, aluminum oxide, cerium oxide, zirconium oxide, titanium oxide, silicon nitride and manganese dioxide and which further contains an iron chelate complex dissolved in the composition, the iron chelate complex having a nitrogen-containing compound as a ligand, and the pH of the entire composition being from 6 to 10.

Abstract: A silicate dental ceramic-based blasting medium for the improvement of the adhesive bond between fire-on ceramic and alloy. In contrast to the traditionally used Al2O3 blasting medium, the complete sealing of the alloy-ceramic contact layer is guaranteed. In this way, the penetration of moisture (from the milieu of the mouth) in the contact layer is prevented. The phenomenon of bubble formation known from practice in dental work worn on a trial basis can thus be stopped after correction firing.

Abstract: A vehicle cleaning solution is provided including a predetermined amount of mineral spirits and a predetermined amount of jeweler's rouge mixed with the mineral spirits for cleaning various vehicular components.

Abstract: A method of making a chemical-mechanical polishing slurry includes mixing a ferric salt oxidizer with a solution to produce a mixture with a dissolved ferric salt oxidizer, filtering the mixture to remove most preexisting particles therein that exceed a selected particle size, adding a suspension agent to the mixture, and adding abrasive particles to the mixture after filtering the mixture. Advantageously, when polishing occurs, scratching by the preexisting particles is dramatically reduced.

Abstract: An abrasive composition for polishing a substrate for a magnetic recording disc is described, which comprises finely divided titanium oxide particles, an abrasion promoter, an optional water-soluble oxidizing agent, and water. This abrasive composition is used for polishing a substrate for a magnetic recording disc by a process wherein the substrate is polished with a pad while the abrasive composition is supplied between the substrate and the pad, and at least one of the pad and the substrate is rotated. The contents of the finely divided titanium oxide particles, the abrasion promoter and the optional water-soluble oxidizing agent are 2-20 wt. %, 1-20 wt. % and up to 10 wt. %, respectively, based on the weight of the abrasive composition as used for polishing the substrate.

Abstract: A polishing slurry includes polishing abrasive grains and a polishing liquid containing at least one kind of a fatty acid and a fatty acid ester. The fatty acid is at least one kind selected from a group consisting of oleic acid, myristic acid, and stearic acid. The fatty acid ester is at least one kind selected from a group consisting of butyl stearate, hexyl stearate, heptyl stearate, butyl oleate, hexyl oleate, heptyl oleate, butyl myristate, hexyl myristate, and heptyl myristate. The polishing slurry is used for polishing a surface to be polished of a substance to be polished such as a wafer by bringing the surface to be polished into slide-contact with a polishing surface of a polishing plate mounted to a polishing table while supplying the polishing slurry on the polishing surface.

Abstract: A polishing agent for semiconductor, comprising cerium oxide particles having a weight average particle size of from 0.1 to 0.35 .mu.m and a crystallite size of from 150 to 600 .ANG..

Abstract: A composition for chemical mechanical polishing includes a slurry. A sufficient amount of a selectively oxidizing and reducing compound is provided in the composition to produce a differential removal of a metal and a dielectric material. A pH adjusting compound adjusts the pH of the composition to provide a pH that makes the selectively oxidizing and reducing compound provide the differential removal of the metal and the dielectric material. A composition for chemical mechanical polishing is improved by including an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material.

Abstract: A polishing composition for a memory hard disc, which comprises the following components (a) to (d):(a) water,(b) at least one compound selected from the group consisting of a polystyrenesulfonic acid, and its salts,(c) a compound selected from the group consisting of an inorganic acid and an organic acid, and their salts, other than component (b), and(d) at least one abrasive selected from the group consisting of aluminum oxide, silicon dioxide, cerium oxide, zirconium oxide, titanium oxide, silicon nitride and manganese dioxide.

Abstract: A water repellent composition for gypsum containing masonry materials is disclosed. The composition contains as organohydrogensiloxane and polyvinyl alcohol, the combination of which provides unexpectedly high water repellency.

Abstract: A method and apparatus for finishing a workpiece surface using MR fluid is provided wherein the workpiece is positioned near a carrier surface such that a converging gap is defined between a portion of the workpiece surface and the carrier surface; a magnetic field is applied substantially at said gap; a flow of stiffened MR fluid is introduced into said converging gap such that a work zone is created in the MR fluid to form a sub-aperture transient finishing tool for engaging and causing material removal at the portion of the workpiece surface; and the workpiece or the work zone is moved relative to the other to expose different portions of the workpiece surface to the work zone for predetermined time periods to selectively finish said portions of said workpiece surface to predetermined degrees.

Abstract: A slurry composition enhances the removal of polish-resistant surface moieties from the surface of a semiconductor wafer during chemical-mechanical polishing. The slurry composition is a mixture including a solvent, a plurality of abrasive particles, and a chelating agent. The abrasive particles abrade the surface of the wafer to remove surface moieties and underlying material. The chelating agent is selected to react with polish-resistant surface moieties on the surface of the wafer surface, to thereby render the surface moieties easier to remove from the surface layer with substantially non-aggressive chemical-mechanical polishing techniques. In operation, the surface moieties and the underlying bulk material are removed by a combination of the chemical effects of the chelating agent and the mechanical effects of the abrasive particles.

Abstract: A cleaning and protectant composition for automotive painted surfaces is provided. The composition includes a low-foaming nonionic surfactant, a silicone antifoam emulsion, and a volatile silicone fluid. A method of cleaning and protecting an automotive surface includes applying the composition to the surface.

Abstract: One embodiment of the present invention includes a chemical-mechanical polishing (CMP) slurry. The slurry is comprised of one or more ferrocenium salts that is or are reduced, during use, to ferrocene. The slurry also includes an abrasive and a concentration of hydronium ions effective to impart a pH of less than 7.

Abstract: Nano-sized powders of alpha alumina can be obtained from a boehmite gel doped with a barrier-forming material such as silica that is then dried, fired and comminuted to powder form.

Abstract: An abrasive material is prepared by dispersing silicon nitride particles acting as abrasive particles in a solvent such as a pure water or an ultra pure water, followed by adding an adsorptive stickable to the abrasive particles to the dispersion. The resultant abrasive material permits diminishing the polishing rate of a silicon nitride film used as a stopper film, with the result that a CVD SiO.sub.2 film to be polished is selectively polished relative to the Si.sub.3 N.sub.4 film used as the stopper film. This makes it possible to make the stopper film as thin as possible and permits the CVD SiO.sub.2 film to be flattened efficiently without bringing about a dishing problem.

Abstract: A polishing composition comprising silicon nitride fine powder, water and an acid.

Abstract: A polishing composition comprising fumed silica, a basic potassium compound and water, of which the specific electric conductivity is from 100 to 5,500 .mu.S/cm.

Abstract: Surfaces of substrates, typically semiconductor device substrates, are polished with a polishing agent comprising polishing abrasive grains of a metal oxide (e.g. cerium oxide, zirconium oxide or manganese oxide) having a hydrophilic surface and a surface potential (zeta potential) of not more than 50 mV at pH 7 in absolute value, preferably polishing abrasive grains having hydrophilic groups, preferably hydroxyl groups, at the extremities and then cleaned with an aqueous cleaning solution comprising pure water. The polishing abrasive grains remaining on the polished substrate surface can be removed to a satisfactory degree therefrom by simple cleaning using the aqueous cleaning solution only.

Abstract: A composition for rinsing a memory hard disc, which comprises water and an additive selected from the group consisting of an oxo-acid, an oxo-acid salt and a chloride.

Abstract: This invention is for an improved slurry for shallow trench isolation processing in chemical mechanical polishing of semiconductor devices. The oxide/nitride selectivity is enhanced by increasing the pH of the slurry, increasing the solids content of the slurry and/or by adding a fluoride salt to the slurry. With these modifications, selectivity of greater than 10:1 can be attained.

Abstract: The present invention relates to an aqueous based, gelled silicone compositions, more particularly waxes and protectants, which are substantially free of volatile organic solvents. The silicone gel wax is useful for protecting a variety of painted surfaces, particularly painted metal surfaces such as car exteriors. The silicone gel protectant is useful for protecting and enhancing the appearance of vinyl, leather, rubber and plastic surfaces such as found in car interiors, car trim and car bumpers.

Abstract: Footware dressings containing fluorocarbons in a carrier base plus optional colorants and additives. These dressings create a relatively slick and non-stick surface with excellent "contamination" resistance.

Abstract: A polishing composition for an aluminum disk includes water, an alumina abrasive agent and a polishing accelerator. The polishing accelerator is preferably basic aluminum nitrate. A process for polishing an aluminum disk using the polishing composition is also provided.

Abstract: A method for forming a copper interconnect on an integrated circuit (IC) begins by forming a dielectric layer (20) having an opening. A tantalum-based barrier layer (21), such as TaN or TaSiN, is formed within the opening in the layer (20). A copper layer (22) is formed over the barrier layer (21). A first CMP process is used to polish the copper (22) to expose portions of the barrier (21). A second CMP process which is different from the first CMP process is then used to polish exposed portions of the layer (21) faster than the dielectric layer (20) or the copper layer (22). After this two-step CMP process, a copper interconnect having a tantalum-based barrier is formed across the integrated circuit substrate (12).

Abstract: A polishing composition for polishing a memory hard disk comprising water and at least one abrasive selected from the group consisting of silicon dioxide, aluminum oxide, cerium oxide, zirconium oxide, titanium oxide, silicon nitride and manganese dioxide, which further contains an iron compound dissolved in the composition, said iron compound being selected from the group consisting of iron(III) nitrate, iron(III) sulfate, ammonium iron(III) sulfate, iron(III) perchlorate and an ion salt of an organic acid.

Abstract: Finishing agents comprise the combination of an alkoxysilane surface active agent, a silanol condensing catalyst, and a nonaqueous liquid or solid medium, or the combination of an alkoxysilane surface active agent, an acid catalyst and a liquid or solid medium. In the latter embodiment, it is preferred that at least one of the alkoxysilane surface active agent and the acid catalyst be microencapsuled. The finishing agent permits formation of chemically adsorbed protecting films. Such protecting films are used for substrates of such equipments as electronics products, electric domestic products, automobiles, industrial equipments, mirrors, lenses for glasses and the like. The protecting films have a durability and heat, weather and abrasion resistance, and also water and oil repellent properties.

Abstract: There is a process for producing spherical metal-oxide powder particles. They are used as finely ground raw and filler materials in mineral, ceramic and refractory construction, technical and auxiliary materials, as well as for polishing and grinding agents.

Abstract: A feldspathic porcelain composition is provided which comprises a continuous glassy matrix phase and a discontinuous, substantially uniformly dispersed cubic leucite crystalline phase, said composition possessing a fusion temperature of from about 800.degree. to about 1200.degree. C. Methods of making the feldspathic porcelain composition are also provided, said methods comprising the steps of forming an alkali aluminosilicate powder comprising SiO.sub.2, Al.sub.2 O.sub.3, K.sub.2 O and Na.sub.2 O and at least one metal salt of rubidium, cesium, calcium, strontium, barium or thallium; heating the powder to effect an exchange of alkali cations with metal cations derived from said metal salt to provide a feldspathic porcelain composition which comprises a continuous glassy matrix phase and a discontinuous crystalline phase comprising cubic leucite.

Abstract: An optical polishing slurry with alumina and ceria components is found to produce an improved polishing performance over either component used alone.

Abstract: A chemical mechanical polishing composition comprising an oxidizing agent at least one catalyst having multiple oxidation states, and at least one stabilizer, the composition being useful when combined with an abrasive or with an abrasive pad to remove metal layers from a substrate.

Abstract: An improved polishing composition is provided that includes an emulsion of a oil-based components and water-based components and a water soluble polishing agent. The polishing composition of the present invention is rubbed on a painted surface, hosed off with water and wiped or towel dried. Because of the use of a water soluble polishing agent in the polishing composition, all or substantially all of the polishing agent is washed away with the water. This eliminates the need for a two-step polishing process wherein a polishing composition is applied to a surface and allowed to dry in a first step and the surface is buffed with a dry cloth in a second step. One preferred embodiment of the present invention includes silicones, water, a nonionic or anionic surfactant and a water soluble polishing agent. Optionally, the polishing composition may include a solvent, mineral oil, wax, and a preservative.

Abstract: A polishing slurry for use in chemical mechanical polishing is disclosed. The polishing slurry contains a solvent and polishing particles dispersed in this solvent. The polishing particles are selected from silicon nitride, silicon carbide, and graphite. The primary particle size of the polishing particles dispersed in the solvent is appropriately 0.01 to 1000 nm. When the polishing particles are colloidally dispersed in the solvent, the secondary particle size of the polishing particles is appropriately 60 to 300 nm.

Abstract: A furniture polish including a conventional active polishing ingredient is provided with a fragrance micro-encapsulated in a plurality of naturally self-adhesive microcapsules of varying wall thicknesses. The microcapsules may be produced by a wide variety of encapsulation methods generally known to various technical arts, including a coacervation, three-phase method.

Abstract: A coating material is provided which has fragments of a gel membrane filter in a liquid. The gel membrane filter has a plurality of electronegative particles provided in an ordered crystalline array. The gel membrane filter has been hardened with a polymer and is embodied in refractive fragments which alter the surface appearance of the resultant coating material. The coating material may be employed as a nail polish or as a paint.

Abstract: A method of making a chemical-mechanical polishing slurry includes mixing a ferric salt oxidizer with a solution to produce a mixture with a dissolved ferric salt oxidizer, filtering the mixture to remove most preexisting particles therein that exceed a selected particle size, adding a suspension agent to the mixture, and adding abrasive particles to the mixture after filtering the mixture. Advantageously, when polishing occurs, scratching by the preexisting particles is dramatically reduced.

Abstract: An abrasive composition for polishing a substrate for a magnetic recording disc is described, which comprises finely divided zirconium oxide particles, an abrasion promoter, an optional water-soluble oxidizing agent, and water. This abrasive composition is used for polishing a substrate for a magnetic recording disc by a process wherein the substrate is polished with a pad while the abrasive composition is supplied between the substrate and the pad, and at least one of the pad and the substrate is rotated. The contents of the finely divided zirconium oxide particles, the abrasion promoter and the optional water-soluble oxidizing agent are 2-20 wt. %, 1-20 wt. % and up to 10 wt. %, respectively, based on the weight of the abrasive composition as used for polishing the substrate.

Abstract: A furniture surface having a coating consisting of a bottom layer comprising a silicone oil adjacent to the furniture surface and a top layer comprising an oil having a specific gravity less than the silicone oil in the bottom layer and a water repelling film-forming fluorinated polymer. The coating may consist of a bottom layer comprising a silicone oil adjacent to the furniture surface, an intermediate layer comprising a water repelling film-forming fluorinated polymer, and a top layer comprising an oil having a specific gravity less than the silicone oil in the bottom layer. The coating may also consist of a bottom layer comprising a silicone oil adjacent to the furniture surface, an intermediate layer comprising an oil having a specific gravity less than the silicone oil in the bottom layer, and a top layer comprising a water repelling film-forming fluorinated polymer.

Abstract: A furniture cleaning and polishing composition that provides protection against water. The composition contains an admixture of A) about 0.01 to 4% by weight of a water repelling halofluoro polymer; B) up to 15% mineral oil; C) about 3 to 25% hydrocarbon solvent; D) about 0.1 to 5% silicone oil; about 0.01 to 5% surfactant, and the remainder water.

Abstract: A polishing slurry composition and its method of making for planarization of silicon semiconductor wafers by chemical mechanical polishing of the wafer. A slurry formulation utilizing a ferric salt tungsten oxidizer, an ammonium persulfate titanium oxidizer, a fatty acid suspension agent, alumina particles with a small diameter and tight diameter range, coated with a solubility coating, and a chemical stabilizer, provides high tungsten and titanium polish rates with high selectivity to silicon dioxide, and good oxide defectivity for use in tungsten local interconnect applications. A method for making a tungsten slurry includes first thoroughly blending small diameter alumina particles with a tight diameter range in an aqueous concentrate with a suspension agent, then mixing with water and oxidizers. Ferric salt tungsten slurries made by this method provide excellent tungsten polish characteristics for via plug and local interconnect applications.

Abstract: A protective composition for automotive painted surfaces is provided, comprising emulsified silicone, an evaporation modifier and an agent which increases wetting speed, dispersed in water.

Abstract: A finely-divided cerium metal/metalloid oxide mixture, containing pyrogenically produced metal/metalloid oxide and 0.001 to 95 wt. % cerium oxide, has a specific surface area between 10 and 400 m.sup.2 /g. The mixture is produced by mixing pyrogenically produced metal/metalloid oxide, having a specific surface area between 30 and 400 m.sup.2 /g, with a cerium compound decomposable to an oxide at elevated temperature, the cerium compound being thermally decomposed to the oxide. The cerium oxide-metal/metalloid oxide mixture can be used as a polishing agent or filler.

Abstract: A method for chemical mechanical polishing (CMP) a copper layer (22) begins by forming the copper layer (22). The copper layer (22) is then exposed to a slurry (24). The slurry (24) contains an oxidizing agent such as H.sub.2 O.sub.2, a carboxylate salt such as ammonium citrate, an abrasive slurry such as alumna abrasive, an optional triazole or triazole derivative, and a remaining balance of a solvent such as deionized water. The use of the slurry (24) polishes the copper layer (22) with a high rate of removal whereby pitting and corrosion of the copper layer (22) is reduced and good copper interconnect planarity is achieved. This slurry (24) has good selectivity of copper to oxide, and results in copper devices which have good electrical performance. In addition, disposal of the slurry (24) is not environmentally difficult since the slurry (24) is environmentally sound when compared to other prior art slurries.

Abstract: A chemical mechanical polishing composition for polishing an oxide layer of a semiconductor device, the composition comprising an alkaline aqueous dispersion containing generally uniformly-shaped nanocrystalline particles of cerium oxide derived from a physical vapor synthesis process, generally uniformly-shaped particles of silicon dioxide, and wherein the cerium oxide particles are substantially the same or smaller in size and size distribution to the silicon dioxide particles. The ratio of the weight of the silicon dioxide in the composition to the weight of the cerium oxide in the composition is in the range from about 7.5:1 to about 1:1.

Abstract: The present invention provides a polishing fluid composition which can effectively polish a surface of a semiconductor silicon wafer or a surface of a film comprising silicon to be formed on silicon wafers with a markedly reduced amount of colloidal silica to be used as abrasives, or a polishing fluid composition which is particularly useful for a polishing step after removal of an oxide layer in a two-step polishing method. The former polishing fluid composition comprises an alkaline suspension which contains a water-soluble silicic acid component, colloidal silica and an alkaline component, and which has a pH value of 8.5 to 13. Meanwhile, the latter polishing fluid composition comprises an alkaline solution which contains a water-soluble silicic acid component and an alkaline component, and which has a pH value of 8.5 to 13; and is substantially free of abrasive particles.