Abstract: A cerium oxide slurry for polishing comprising cerium oxide dispersed in water, wherein the slurry has a conductivity of about 30 c &mgr;S/cm or less when the cerium oxide concentration in the slurry is c wt. %. In order to adjust the conductivity to about 30 c &mgr;S/cm or less, cerium oxide is washed with deionized water.

Abstract: By using a polishing slurry which comprises, at least, a polishing grain, an oxidizing agent and a higher-mono-primary amine, it is possible to suppress dishing and erosion liable to be produced in chemical mechanical polishing (CMP) for a copper-based metal film when forming a buried interconnection of a copper-based metal on a barrier metal film of a tantalum-based metal.

Abstract: An abrasive composition for substrates for magnetic recording disks and a process for producing a substrate for a magnetic recording disk are provided, which enable lowering of surface roughness of a substrate for a magnetic recording disk; form no nodules, polishing scratches, and minute defects such as micropits; and enable polishing at economical speeds. The abrasive composition comprises at least water, titanium oxide fine particles and an abrasion promoter, wherein 90-100% of the titanium oxide is constituted by a single crystal structure.

Abstract: The present invention provides an abrasive composition for polishing magnetic recording disk substrates that results in a low surface roughness of the magnetic recording disk, allows the attaining of high-density recording without the occurrence of protrusions or polishing scratches, and enables polishing to be performed at an economical speed. The present invention discloses an abrasive composition for polishing magnetic recording disk substrates comprising water, silicon dioxide, antigelling agent, aluminum nitrate and hydrogen peroxide.

Abstract: Provided are methods for making a slurry composition, suitable for use in a chemical-mechanical planarization process. Also provided are compositions made by such methods. The methods comprise combining: (a) abrasive particles; (b) a suspension medium; (c) a peroxygen compound; (d) an etching agent; and (e) an alkyl ammonium hydroxide. The methods and compositions of the present invention are particularly applicable to the semiconductor manufacturing industry.

Abstract: An aluminosilicate in an acicular form, a platy form, or a columnar form and having the composition represented by aM2O.bAl2O3.cSiO2.dRmAn.yH2O, wherein M is at least one of Na and K; R is one or more elements selected from the group consisting of Na, K, Ca and Mg; A is one or more members selected from the group consisting of CO3, SO4, NO3, OH and Cl; a is from 1 to 6; b is from 2 to 8; c is from 2 to 12; d is from 0 to 4; m is from 1 to 2; n is from 1 to 3; and y is from 0 to 32; a polishing agent including the aluminosilicate; and a detergent composition including the aluminosilicate.

Abstract: Polishing compositions for metal CMP with reduced dishing and overpolish insensitivity are formulated to have a low static etching rate at high temperatures, e.g., higher than 50° C. Embodiments include abrasive-free polishing compositions comprising one or more chelating agents, one or more oxidizers, one or more corrosion inhibitors, one or more acids to achieve a pH of about 3 to about 10 and deionized water.

Abstract: A method of making a slurry, by mixing a quantity of water with dissolvable constituents of an aqueous slurry used for polishing, with the dissolvable constituents being apportioned according to their desired per cent concentrations thereof in the aqueous slurry, and drying the mixture to obtain a reconstitutable slurry having solids of the dissolvable constituents.

Abstract: An aqueous metal oxide sol slurry has been developed for removal of low dielectric constant materials. The slurry is formed directly in solution utilizing non-dehydrated chemically active metal oxide sols which are formed in a colloidal suspension or dispersion. The oxide sols have not undergone any subsequent drying and the particles are believed to be substantially spherical in structure, dimensionally stable and do not change shape over time. The sol particles are mechanically soft and heavily hydrated which reduces surface damage even in the case where soft polymer or porous dielectric films are polished. The sol particles are formed of a chemically active metal oxide material, or combinations thereof, or can be coated on chemically inactive oxide material such as silicon dioxide or can be conformed therewith. The oxide sols can include a bi-modal particle distribution. The slurry can be utilized in CMP processes, with or without conditioning.

Abstract: A polishing composition comprising the following components (a) to (g):

Abstract: A polishing composition comprising silica particles, water, and Fe salt and/or Al salt of a polyaminocarboxylic acid; a polishing process comprising applying the polishing composition; a process for manufacturing a magnetic disk substrate, comprising the step of polishing a substrate with the polishing composition; a magnetic disk substrate manufactured by applying the polishing composition.

Abstract: The polishing slurry includes by weight percent, 0.1 to 50 metal oxy-acid accelerator, 0.5 to 50 cerium oxide abrasive particles and balance water. The metal oxy-acid accelerator is formed with a metal selected from the group consisting of chromium, lanthanum and rare earth metals 59 to 71, manganese, molybdenum, niobium, osmium, rhenium, ruthenium, titanium, tungsten, vanadium, yttrium and zirconium.

Abstract: A process for chemical mechanical polishing of a working film on a wafer, which entails conducting the chemical mechanical polishing with an aqueous dispersion containing water and composite particles, the composite particles containing polymer particles having at least one of a silicon compound portion or section and a metal compound portion or section formed directly or indirectly on the polymer particles.

Abstract: An acidic polishing slurry for chemical-mechanical polishing, containing 0.1 to 5% by weight of a colloidal silica abrasive and 0.5 to 10% by weight of a fluoride salt, is distinguished by a higher polishing selectivity with regard to the rate at which silica is removed compared to the rate at which silicon nitride is removed compared to a conventional polishing slurry containing pyrogenic silica.

Abstract: The present invention is a first CMP slurry including an abrasive, an oxidizing agent, a complexing agent, a film forming agent and an organic amino compound, a second polishing slurry including an abrasive, an oxidizing agent, and acetic acid wherein the weight ratio of the oxidizing agent to acetic acid is at least 10 and a method for using the first and second polishing slurries sequentially to polish a substrate containing copper and containing tantalum or tantalum nitride or both tantalum and tantalum nitride.

Abstract: This invention relates to a CMP slurry system for use in semiconductor manufacturing. The slurry system comprises two parts. The first part is a generic dispersion that only contains an abrasive and, optionally, a surfactant and a stabilizing agent. The generic dispersion can be used for polishing metals as well as interlayer dielectrics (ILD). The second part is a novel activator solution comprising at least two components selected from the group consisting of: an oxidizer, acids, amines, chelating agents, fluorine-containing compounds, corrosion inhibitors, buffering agents, surfactants, biological agents and mixtures thereof.

Abstract: The polishing agent of the invention has polishing grains suspended in a solution. The polishing grains consist essentially of a first substance with a glass transition temperature TG, and the polishing grains contain a dopant. The concentration of the dopant is set so that the glass transition temperature TG′ of the doped substance is lower than the glass transition temperature TG of the undoped first substance. The polishing agent is advantageously used for the microscratch-free planarization of a semiconductor substrate or of layers applied on it.

Abstract: Production of an alumina powder characterized by having a single or multiple crystal structure selected from the group consisting of &ggr;, &dgr; and &thgr;-forms, a primary particle size of 10 to 50 nm, a mean secondary particle size of 100 to 500 nm, and a granular primary particle shape, or an alumina powder characterized by having an a-form crystal structure, a primary particle size of 60 to 150 nm, a mean secondary particle size of 200 to 500 nm, and a granular primary particle shape, using as a raw material an alumina hydrate comprising rectangular plate-like primary particles having a boehmite structure and having a length of one side of 10 to 50 nm; and preparation of a polishing composition comprising the alumina powder, water and a polishing accelerator.

Abstract: A polishing composition comprising: (a) an abrasives (b) a compound to form a chelate with copper ions (c) a compound to provide a protective layer-forming function to a copper layer, (d) hydrogen peroxide, and (e) water, wherein the abrasive of component (a) has a primary particle size within a range of from 50 to 120 nm.

Abstract: A CMP slurry is formulated with a single component oxidizer capable of oxidizing a metal undergoing planarization and yielding a complexing agent which complexes with the oxidized metal thereby minimizing overetching. Embodiments include CMP Cu with a fixed abrasive pad or an abrasive containing slurry, employing a peroxy acid, e.g., peroxy benzoic acid, or a polyethylene glycol peroxy acid. In another embodiment, a single component is employed which dissociates in the slurry into an oxidizer and complexing agent, such as an amine-peroxy acid, e.g., urea peroxy acid.

Abstract: Disclosed herein is a method of preparing silica slurry for wafer polishing. This method includes pre-treating relatively inexpensive and commercially available fumed or colloidal silica particles as a seed by a settling, a crushing using a ball mill and a paint shaker, and a sonication to produce an aqueous dispersion of the silica particles. The pre-treated silica particles are then combined with tetraethylorothosilicate as a precursor, an alcohol solvent and a base, and grown to a desired size by hydrolysis and polycondensation of the precursor, tetraethylorothosilicate. Then, the alcohol solvent, in which the silica particles are grown, are displaced with water by a vacuum distillation. The resulting aqueous dispersion of the grown silica dispersion is hydrothermally treated in an autoclave. Thus, this method allows the economical preparation of the spherical silica particles having a highly uniform size and a very high purity.

Abstract: Silicone compositions are used for treating nonporous surfaces such as glass, porcelain, ceramic, polished or painted metal, plastic, and the like, to render them water, soil and stain repellent. Volatile organic compound (VOC) free cream, paste, powder and solid compositions are provided by the inclusion of stabilizers in the silicone compositions. Solventless silicone compositions provide numerous advantages and improved water/soil repellency qualities.

Abstract: A chemical mechanical polishing slurry comprising an oxidizing agent, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, titanium nitride, tantalum and tantalum nitride containing layers from a substrate. The slurry does not include a separate film-forming agent.

Abstract: Methods, apparatus, and compositions are provided for planarizing a substrate. In one aspect, a composition for polishing a substrate includes one or more photochemically reactive compounds. The composition including one or more photochemically reactive compounds may be used in a polishing process including applying a composition to a substrate surface, exposing the photochemically reactive compounds to a radiant energy source, and removing material from the substrate surface. The method may be performed in an apparatus including at least one platen supporting a substrate or polishing article, a fluid delivery arm disposed adjacent each of the at least one platens, a source of a polishing composition in fluid communication with at least one of the fluid delivery arms, and at least one radiant energy source for radiating at least a portion of the substrate or polishing article.

Abstract: By using a polishing slurry which comprises, at least, a polishing grain, an oxidizing agent and a higher-mono-primary amine, it is possible to suppress dishing and erosion liable to be produced in chemical mechanical polishing (CMP) for a copper-based metal film when forming a buried interconnection of a copper-based metal on a barrier metal film of a tantalum-based metal.

Abstract: A metal cleaner-polish in the form of a substantially homogeneous liquid slurry containing aliphatic hydrocarbons, finely divided abrasive, and isopropanol as a stabilizer/solvent.

Abstract: This invention provides a chemical mechanical polishing slurry for polishing a metal film formed on an insulating film with a concave on a substrate wherein the slurry contains a thickener without an ionic group with an opposite sign to a charge on a polishing material surface to 0.001 wt % or more and less than 0.05 wt% to the total amount of the slurry and has a slurry viscosity of 1 mPa·s to 5 mPa·s both inclusive. The polishing slurry may be used in CMP to form a reliable damascene electric connection with excellent electric properties at a higher polishing rate, i.e., a higher throughput while preventing dishing or erosion.

Abstract: A polishing composition for magnetic disk substrates to be used for memory hard disks, which comprises: (a) water; (b) at least one phosphate. compound selected from the group consisting of a phosphate ester of ethoxylated alkylalcohol and a phosphate ester of ethoxylated arylalcohol; (c) at least one polishing accelerator selected from the group consisting of an inorganic acid and an organic acid, and their salts, other than the phosphate compound of component (b); (d) at least one abrasive selected from the group consisting of aluminum oxide, silicon dioxide, cerium oxide, zirconium oxide, titanium oxide, silicon nitride and manganese dioxide.

Abstract: Metal CMP with reduced dishing and overpolish insensitivity is achieved with an abrasive-free polishing composition having a pH and oxidation-reduction potential in the domain of passivation of the metal and, therefore, a low static etching rate at high temperatures, e.g., higher than 50° C. Embodiments of the present invention comprise CMP of Cu film without any abrasive using a composition comprising one or more chelating agents, one or more oxidizers, one or more corrosion inhibitors, one or more agents to achieve a pH of about 3 to about 10 and deionized water.

Abstract: A dry particulate solids composition is provided which may be reconstituted into a chemical-mechanical polishing slurry.

Abstract: A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries at least comprise silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.

Abstract: The present invention relates to a powder composition and to a method for polishing stone, in particular granite, said method making use of said powder composition.

Abstract: Water-laden solid matter is provided which is obtained by adding 40 to 300 weight parts of water to 100 weight parts of inorganic oxide particles synthesized by fumed process or metal evaporation oxidation process, slurry for polishing is provided which is manufactured by using the water-laden solid matter, and a method for manufacturing a semiconductor device using the above slurry. Said water-laden solid matter is within a range of 0.3 to 3 g/cm3 in bulk density and within a range of 0.5 to 100 mm&phgr; in average particle size when manufactured granular. Said slurry for polishing is manufactured from the water-laden solid matter, and the average particle size thereof after being dispersed in water is within a range of 0.05 to 1.0 &mgr;m.

Abstract: A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries at least comprise silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.

Abstract: The present invention relates to a polishing composition for polishing alumina disks, polishing substrates having silica surfaces and semiconductor wafers, comprising a stable aqueous silica sol containing moniliform colloidal silica particles having a ratio (D1/D2) of a particle diameter D1 nm (as measured by dynamic light scattering method) to a mean particle diameter D2 (as measured by nitrogen absorption method) of 3 or more, wherein D1 is between 50 to 800 nm and D2 is between 10 to 120 nm, said moniliform colloidal silica particles being composed of spherical colloidal silica particles and a metal oxide-containing silica bond which bonds these spherical colloidal silica particles together, wherein the spherical colloidal silica particles are linked together in rows in only one plane by observation through an electron microscope, and further wherein said polishing composition contains 0.5 to 50% by weight of said moniliform colloidal silica particles.

Abstract: A polishing composition for chemical mechanical polishing of semiconductor wafers having a copper metal circuit includes, an aqueous composition having a pH of under 5.0, and polyacrylic acid having a number average molecular weight of about 20,000-150,000, or blends of high and low number average molecular weight polyacrylic acids.

Abstract: The present invention provides polishes for surfaces, comprising aminoorganopolysiloxanes (A) which are solid at room temperature, contain fluoro groups and are able to change their aggregate state reversibly as a result of changes in temperature.

Abstract: A cerium oxide slurry for polishing comprising cerium oxide dispersed in water, wherein the slurry has a conductivity of about 30c &mgr;S/cm or less when the cerium oxide concentration in the slurry is c wt. %. In order to adjust the conductivity to about 30c &mgr;S/cm or less, cerium oxide is washed with deionized water.

Abstract: The present invention relates to a free abrasive slurry composition which is advantageously used in uniform grinding of a composite material composed of a plurality of materials each having different hardness, without causing selective grinding. The free abrasive slurry composition contains abrasive particles, an anti-abrasion agent as an anti-selective grinding agent and a dispersion medium and the anti-abrasive agent is a compound containing one or both of sulfur and phosphorus or hydroxyl group(s) in the molecular chain.

Abstract: It is an object of the present invention to provide an aqueous dispersion for CMP that has low generation of coarse particles from abrasive particles or the like during storage or transport and maintains excellent polishing performance The aqueous dispersion for CMP according to the first aspect of the invention comprises abrasive particles, an amphipathic compound and water. The aqueous dispersion for CMP according to the second aspect of the invention comprising abrasive particles and water, wherein a boundary film is formed at the interface between the aqueous dispersion and the air. The boundary film may comprise an amphipathic compound. The HLB value of the amphipathic compound is preferably greater than 0 but no greater than 6.

Abstract: This invention provides a polishing composition with a stable pH for use in CMP of semiconductor substrates comprising: high-purity submicron particles of a metal oxide and a soluble metal salt of the metal oxide. The metal salt is present in a proportionate amount to adjust the aqueous concentration of metal ions to the equilibrium solubility of the metal oxide at the desired pH of the polishing composition.

Abstract: A tantalum-based liner for copper metallurgy is selectively removed by chemical-mechanical planarization (CMP) in an acidic slurry of an oxidizer such as hydrogen peroxide, deionized water, a corrosion inhibitor such as BTA, and a surfactant such as DUPONOL SP, resulting in a high removal rate of the liner without appreciable removal of the exposed copper and with minimal dishing.

Abstract: Water based polishing slurries, comprising oxide polishing particles. The polishing slurries comprise an innovative (multi-modal) particle distribution for improved polishing performance.

Abstract: According to the present invention, a process is provided for producing crystalline ceric oxide particles having a particle diameter of 0.005 to 5 &mgr;m, which comprises the steps of reacting a cerium (III) salt with an alkaline substance in an (OH)/(Ce3+) molar ratio of 3 to 30 in an aqueous medium in an inert gas atmosphere to produce a suspension of cerium (III) hydroxide, and blowing oxygen or a gas containing oxygen into the suspension at a temperature of 10 to 95° C. and at an atmospheric pressure.

Abstract: Disclosed is a process for preparing metal oxide slurries suitable for the chemical mechanical polishing (CMP) of semiconductor devices. A suspension of metal oxide in water is dispersed at a predetermined pressure through an orifice of a dispersion chamber while two intensifier pumps are used to maintain the pressure applied to the dispersion chamber constantly, resulting in restraining or minimizing the generation of macro particles as large as or larger than 1 &mgr;m. The metal oxide slurries are uniform in particle size with narrow particle size distribution and show excellent polishing performance with a significant reduction in the occurrence frequency of microscratches, so that they are suitable for CMP of ultra-integrated semiconductor devices.

Abstract: CMP formulations comprising alumina particles and an iodate oxidizer can be stabilized against pH drift during use by acidification using an organic acid. Formulation pH stability can be further enhanced by treating the formulation at an elevated temperature before it is used.

Abstract: A method of imparting a water repellent surface to a hydrophilic substrate which comprises contacting the substrate with a solution or dispersion of a suitable calixarene in a liquid medium.

Abstract: A semiconductor wafer or a film formed thereon is polished by using a polishing agent comprising abrasive containing silica particles as the main component, water as a solvent, and a water-soluble cellulose, an alkali metal impurity content of the polishing agent being 5C ppm or less where the polishing agent contains C % by weight of the water-soluble cellulose, so as to flatten the semiconductor wafer without doing damage to the wafer or the film formed thereon and without bringing about a dishing problem in the polished surface.

Abstract: A polishing composition comprising an abrasive, an anticorrosive, an oxidizing agent, an acid, a pH regulator and water and having a pH within a range of from 2 to 5, wherein the abrasive is colloidal silica or fumed silica, and its primary particle size is at most 20 nm.

Abstract: An emulsion polish that includes a non-volatile silicone fluid, a liquid polyether siloxane immiscible with water and the silicon fluid, and a surfactant to stabilize the emulsion. The polyether siloxane has a specific gravity less than that of the silicone fluid. A process for treating a hard surface with such a polish is also disclosed.