Polishes Patents (Class 106/3)
  • Patent number: 6409782
    Abstract: The present invention relates to a powder composition and to a method for polishing stone, in particular granite, said method making use of said powder composition.
    Type: Grant
    Filed: December 4, 2000
    Date of Patent: June 25, 2002
    Inventors: Wing Thye Lum, Whee Huat Tan
  • Patent number: 6409780
    Abstract: Water-laden solid matter is provided which is obtained by adding 40 to 300 weight parts of water to 100 weight parts of inorganic oxide particles synthesized by fumed process or metal evaporation oxidation process, slurry for polishing is provided which is manufactured by using the water-laden solid matter, and a method for manufacturing a semiconductor device using the above slurry. Said water-laden solid matter is within a range of 0.3 to 3 g/cm3 in bulk density and within a range of 0.5 to 100 mm&phgr; in average particle size when manufactured granular. Said slurry for polishing is manufactured from the water-laden solid matter, and the average particle size thereof after being dispersed in water is within a range of 0.05 to 1.0 &mgr;m.
    Type: Grant
    Filed: January 14, 2000
    Date of Patent: June 25, 2002
    Assignees: Kabushiki Kaisha Toshiba, JSR Corporation
    Inventors: Hiroyuki Yano, Nobuo Hayasaka, Katsuya Okumura, Akira Iio, Masayuki Hattori, Kiyonobu Kubota
  • Patent number: 6398827
    Abstract: The present invention relates to a polishing composition for polishing alumina disks, polishing substrates having silica surfaces and semiconductor wafers, comprising a stable aqueous silica sol containing moniliform colloidal silica particles having a ratio (D1/D2) of a particle diameter D1 nm (as measured by dynamic light scattering method) to a mean particle diameter D2 (as measured by nitrogen absorption method) of 3 or more, wherein D1 is between 50 to 800 nm and D2 is between 10 to 120 nm, said moniliform colloidal silica particles being composed of spherical colloidal silica particles and a metal oxide-containing silica bond which bonds these spherical colloidal silica particles together, wherein the spherical colloidal silica particles are linked together in rows in only one plane by observation through an electron microscope, and further wherein said polishing composition contains 0.5 to 50% by weight of said moniliform colloidal silica particles.
    Type: Grant
    Filed: June 29, 2000
    Date of Patent: June 4, 2002
    Assignee: Nissan Chemical Industries, LTD.
    Inventors: Isao Ota, Tohru Nishimura, Yoshitane Watanabe, Yoshiyuki Kashima, Kiyomi Ema, Yutaka Ohmori
  • Publication number: 20020062600
    Abstract: A polishing composition for chemical mechanical polishing of semiconductor wafers having a copper metal circuit includes, an aqueous composition having a pH of under 5.0, and polyacrylic acid having a number average molecular weight of about 20,000-150,000, or blends of high and low number average molecular weight polyacrylic acids.
    Type: Application
    Filed: August 9, 2001
    Publication date: May 30, 2002
    Inventors: Glenn C. Mandigo, Terence M. Thomas, Craig D. Lack, Ross E. Lack, Jinru Bian, Tirthankar Ghosh
  • Patent number: 6387139
    Abstract: A cerium oxide slurry for polishing comprising cerium oxide dispersed in water, wherein the slurry has a conductivity of about 30c &mgr;S/cm or less when the cerium oxide concentration in the slurry is c wt. %. In order to adjust the conductivity to about 30c &mgr;S/cm or less, cerium oxide is washed with deionized water.
    Type: Grant
    Filed: October 3, 2001
    Date of Patent: May 14, 2002
    Assignee: Showa Denko K.K.
    Inventors: Takanori Kido, Masayuki Sanbayashi, Fumio Tsujino, Kagetaka Ichikawa
  • Patent number: 6387166
    Abstract: The present invention provides polishes for surfaces, comprising aminoorganopolysiloxanes (A) which are solid at room temperature, contain fluoro groups and are able to change their aggregate state reversibly as a result of changes in temperature.
    Type: Grant
    Filed: May 18, 2000
    Date of Patent: May 14, 2002
    Assignee: Wacker-Chemie GmbH
    Inventors: Bors C. Abele, Günter Mahr, Jörn Winterfeld, Franz Wimmer, Anton Spannbrucker
  • Patent number: 6383239
    Abstract: The present invention relates to a free abrasive slurry composition which is advantageously used in uniform grinding of a composite material composed of a plurality of materials each having different hardness, without causing selective grinding. The free abrasive slurry composition contains abrasive particles, an anti-abrasion agent as an anti-selective grinding agent and a dispersion medium and the anti-abrasive agent is a compound containing one or both of sulfur and phosphorus or hydroxyl group(s) in the molecular chain.
    Type: Grant
    Filed: March 9, 2000
    Date of Patent: May 7, 2002
    Assignees: Tokyo Magnetic Printing Co., Ltd., TDK Corporation
    Inventors: Yasuyuki Suzuki, Tomohiro Kaku, Isao Saito, Kazuya Orii, Yasutoshi Fujita, Masao Yamaguchi, Masahiro Sasaki
  • Patent number: 6383240
    Abstract: It is an object of the present invention to provide an aqueous dispersion for CMP that has low generation of coarse particles from abrasive particles or the like during storage or transport and maintains excellent polishing performance The aqueous dispersion for CMP according to the first aspect of the invention comprises abrasive particles, an amphipathic compound and water. The aqueous dispersion for CMP according to the second aspect of the invention comprising abrasive particles and water, wherein a boundary film is formed at the interface between the aqueous dispersion and the air. The boundary film may comprise an amphipathic compound. The HLB value of the amphipathic compound is preferably greater than 0 but no greater than 6.
    Type: Grant
    Filed: September 29, 2000
    Date of Patent: May 7, 2002
    Assignee: JSR Corporation
    Inventors: Kazuo Nishimoto, Osamu Kikuchi, Nobuo Kawahashi
  • Patent number: 6379406
    Abstract: This invention provides a polishing composition with a stable pH for use in CMP of semiconductor substrates comprising: high-purity submicron particles of a metal oxide and a soluble metal salt of the metal oxide. The metal salt is present in a proportionate amount to adjust the aqueous concentration of metal ions to the equilibrium solubility of the metal oxide at the desired pH of the polishing composition.
    Type: Grant
    Filed: December 11, 2000
    Date of Patent: April 30, 2002
    Assignee: Rodel Holdings, Inc.
    Inventors: Terence M. Thomas, Craig D. Lack, Steven P. Goehringer
  • Patent number: 6375693
    Abstract: A tantalum-based liner for copper metallurgy is selectively removed by chemical-mechanical planarization (CMP) in an acidic slurry of an oxidizer such as hydrogen peroxide, deionized water, a corrosion inhibitor such as BTA, and a surfactant such as DUPONOL SP, resulting in a high removal rate of the liner without appreciable removal of the exposed copper and with minimal dishing.
    Type: Grant
    Filed: May 7, 1999
    Date of Patent: April 23, 2002
    Assignee: International Business Machines Corporation
    Inventors: William J. Cote, Daniel C. Edelstein, Naftali E. Lustig
  • Patent number: 6375694
    Abstract: Water based polishing slurries, comprising oxide polishing particles. The polishing slurries comprise an innovative (multi-modal) particle distribution for improved polishing performance.
    Type: Grant
    Filed: May 22, 2000
    Date of Patent: April 23, 2002
    Assignee: Rodel Holdings Inc.
    Inventors: John V. H. Roberts, Lee Melbourne Cook, William D. Budinger
  • Patent number: 6372003
    Abstract: According to the present invention, a process is provided for producing crystalline ceric oxide particles having a particle diameter of 0.005 to 5 &mgr;m, which comprises the steps of reacting a cerium (III) salt with an alkaline substance in an (OH)/(Ce3+) molar ratio of 3 to 30 in an aqueous medium in an inert gas atmosphere to produce a suspension of cerium (III) hydroxide, and blowing oxygen or a gas containing oxygen into the suspension at a temperature of 10 to 95° C. and at an atmospheric pressure.
    Type: Grant
    Filed: July 9, 1999
    Date of Patent: April 16, 2002
    Assignee: Nissan Chemical Industries, Ltd.
    Inventors: Toshio Kasai, Isao Ota, Takao Kaga, Tohru Nishimura, Kenji Tanimoto
  • Patent number: 6364919
    Abstract: Disclosed is a process for preparing metal oxide slurries suitable for the chemical mechanical polishing (CMP) of semiconductor devices. A suspension of metal oxide in water is dispersed at a predetermined pressure through an orifice of a dispersion chamber while two intensifier pumps are used to maintain the pressure applied to the dispersion chamber constantly, resulting in restraining or minimizing the generation of macro particles as large as or larger than 1 &mgr;m. The metal oxide slurries are uniform in particle size with narrow particle size distribution and show excellent polishing performance with a significant reduction in the occurrence frequency of microscratches, so that they are suitable for CMP of ultra-integrated semiconductor devices.
    Type: Grant
    Filed: March 27, 2000
    Date of Patent: April 2, 2002
    Assignee: Cheil Industries, Inc.
    Inventors: Kil Sung Lee, Jae Seok Lee, Seok Jin Kim, Tu Won Chang
  • Patent number: 6364920
    Abstract: CMP formulations comprising alumina particles and an iodate oxidizer can be stabilized against pH drift during use by acidification using an organic acid. Formulation pH stability can be further enhanced by treating the formulation at an elevated temperature before it is used.
    Type: Grant
    Filed: April 21, 2000
    Date of Patent: April 2, 2002
    Assignee: Saint-Gobain Ceramics & Plastics, Inc.
    Inventors: Ajay K. Garg, Brahmanandam V. Tanikella
  • Patent number: 6358431
    Abstract: A method of imparting a water repellent surface to a hydrophilic substrate which comprises contacting the substrate with a solution or dispersion of a suitable calixarene in a liquid medium.
    Type: Grant
    Filed: February 24, 1999
    Date of Patent: March 19, 2002
    Assignee: The University of Sheffield
    Inventors: Charles James Matthew Stirling, Frank Davis
  • Patent number: 6354913
    Abstract: A semiconductor wafer or a film formed thereon is polished by using a polishing agent comprising abrasive containing silica particles as the main component, water as a solvent, and a water-soluble cellulose, an alkali metal impurity content of the polishing agent being 5C ppm or less where the polishing agent contains C % by weight of the water-soluble cellulose, so as to flatten the semiconductor wafer without doing damage to the wafer or the film formed thereon and without bringing about a dishing problem in the polished surface.
    Type: Grant
    Filed: January 6, 1999
    Date of Patent: March 12, 2002
    Assignees: Kabushiki Kaisha Toshiba, Tokuyama Corporation
    Inventors: Naoto Miyashita, Yoshihiro Minami, Kenji Doi, Jun Takayasu, Hiroyuki Kohno, Hiroshi Kato, Kazuhiko Hayashi
  • Patent number: 6355075
    Abstract: A polishing composition comprising an abrasive, an anticorrosive, an oxidizing agent, an acid, a pH regulator and water and having a pH within a range of from 2 to 5, wherein the abrasive is colloidal silica or fumed silica, and its primary particle size is at most 20 nm.
    Type: Grant
    Filed: February 11, 2000
    Date of Patent: March 12, 2002
    Assignees: Fujimi Incorporated, Fujimi America Inc.
    Inventors: Katsuyoshi Ina, W. Scott Rader, David M. Shemo, Tetsuji Hori
  • Patent number: 6352582
    Abstract: An emulsion polish that includes a non-volatile silicone fluid, a liquid polyether siloxane immiscible with water and the silicon fluid, and a surfactant to stabilize the emulsion. The polyether siloxane has a specific gravity less than that of the silicone fluid. A process for treating a hard surface with such a polish is also disclosed.
    Type: Grant
    Filed: April 20, 2000
    Date of Patent: March 5, 2002
    Assignee: S.C. Johnson & Son, Inc.
    Inventor: Colin W. Brown
  • Publication number: 20020023389
    Abstract: A slurry for chemical mechanical polishing, which contains polishing particles comprising colloidal particles whose primary particles have a diameter ranging from 5 to 30 nm, wherein the degree of association of the primary particles is 5 or less. This slurry for chemical mechanical polishing makes it possible to minimize the erosion and scratching on the occasion when a conductive material film is subjected to a CMP treatment.
    Type: Application
    Filed: August 21, 2001
    Publication date: February 28, 2002
    Inventors: Gaku Minamihaba, Hiroyuki Yano, Nobuyuki Kurashima, Nobuo Kawahashi, Masayuki Hattori, Kazuo Nishimoto
  • Patent number: 6348076
    Abstract: Slurry compositions comprising an oxidizing agent, copper corrosion inhibitor, abrasive particles; surface active agent and polyelectrolyte are useful for polishing or planarizing chip interconnect/wiring material such as Al, W and especially Cu.
    Type: Grant
    Filed: December 28, 1999
    Date of Patent: February 19, 2002
    Assignee: International Business Machines Corporation
    Inventors: Donald F. Canaperi, William J. Cote, Paul Feeney, Mahadevaiyer Krishnan, Joyce C. Liu, Michael F. Lofaro, Philip Murphy, Eric Jeffrey White
  • Publication number: 20020017064
    Abstract: The present invention provides an LSI device polishing composition containing water, abrasive grains, an organic acid, and an oxidizing agent, and having a pH of 5.5-10.0 adjusted by an alkaline substance, the LSI device polishing composition being used for polishing a copper-containing metal wiring layer in which copper is deposited on an insulating film via barrier metal formed of Ta or TaN; and a method for producing LSI devices by use of the polishing composition. During polishing of a barrier metal such as Ta or TaN and a copper wiring layer, the rate of polishing Ta or TaN can be enhanced, to thereby prevent dishing and erosion.
    Type: Application
    Filed: July 2, 2001
    Publication date: February 14, 2002
    Inventors: Yoshitomo Shimazu, Takanori Kido, Nobuo Uotani
  • Patent number: 6346144
    Abstract: One embodiment of the present invention includes a chemical-mechanical polishing (CMP) slurry. The slurry is comprised of one or more ferrocenium salts that is or are reduced, during use, to ferrocene. The slurry also includes an abrasive and a concentration of hydronium ions effective to impart a pH of less than 7.
    Type: Grant
    Filed: November 27, 2000
    Date of Patent: February 12, 2002
    Assignee: Intel Corporation
    Inventor: Kevin J. Lee
  • Publication number: 20020011031
    Abstract: The object of the present invention is to provide an aqueous dispersion for chemical mechanical polishing which can be polished working film for semiconductor devices and which is useful for STI. The aqueous dispersion for chemical mechanical polishing of the invention is characterized by comprising an inorganic abrasive such as silica, ceria and the like, and organic particles composed of a resin having anionic group such as carboxyl group into the molecular chains. The removal rate for silicon oxide film is at least 5 times, particularly 10 times the removal rate for silicon nitride film. The aqueous dispersion may also contain an anionic surfactant such as potassium dodecylbenzene sulfonate and the like. And a base may also be included in the aqueous dispersion for adjustment og the pH to further enhance the dispersability, removal rate and selectivity.
    Type: Application
    Filed: May 17, 2001
    Publication date: January 31, 2002
    Applicant: JSR Corporation
    Inventors: Masayuki Hattori, Hitoshi Kishimoto, Nobuo Kawahashi
  • Patent number: 6340374
    Abstract: A polishing slurry having a high polishing rate is provided. A polishing slurry comprising water, fumed silica having an average primary particle size of 9 to 60 nm and spherical silica having an average primary particle size of 40 to 600 nm excluding the fumed silica, wherein a content of the whole silicas obtained by totaling the fumed silica and the spherical silica falls in a range of 1 to 40% by weight, and a process for polishing a semiconductor device using the polishing slurry described above.
    Type: Grant
    Filed: March 27, 2000
    Date of Patent: January 22, 2002
    Assignee: Tokuyama Corporation
    Inventors: Hiroshi Kato, Naoto Mochizuki, Hiroyuki Kono
  • Publication number: 20020005017
    Abstract: It is an object of the present invention to provides an aqueous CMP dispersion with an adequately high initial removal rate, and which, even after repeated polishing, exhibits at least one, and preferably two or more, of the following functions and effects; (1) reduction of performance of polishing pads is suppressed and an adequate removal rate is maintained, (2) generation of pits on polishing surfaces is inhibited, and (3) uneven sections on polishing surfaces are flattened, and satisfactory finished surfaces can be formed with high precision. The aqueous CMP dispersion comprises an abrasive, an organic compound and water. The organic compound with an effect of suppressing reduction of performance of polishing pads may be biphenol, bipyridyl, vinylpyridine, adenine or the like. The organic compound with an effect of inhibiting generation of pits on polishing surfaces may be biphenol, bipyridyl, vinylpyridine, hypoxanthine or the like.
    Type: Application
    Filed: March 30, 2001
    Publication date: January 17, 2002
    Applicant: JSR Corporation
    Inventors: Masayuki Motonari, Masayuki Hattori, Nobuo Kawahashi
  • Patent number: 6338743
    Abstract: The present invention relates to buffer systems in the form of solutions or salts for preparing suspensions which can be used for chemomechanical polishing. In particular, these buffer systems can be used for preparing suspensions having a high pH of 9.5-13 which are used for the chemomechanical polishing of Si and metal surfaces of semiconductors, known as wafers.
    Type: Grant
    Filed: April 3, 2000
    Date of Patent: January 15, 2002
    Assignee: Merck Patent Gesellschaft mit beschrankter Haftung
    Inventors: Claus Dusemund, Rudolf Rhein, Manuela Schweikert, Martin Hostalek
  • Publication number: 20020002798
    Abstract: A dry particulate solids composition is provided which may be reconstituted into a chemical-mechanical polishing slurry.
    Type: Application
    Filed: May 3, 2001
    Publication date: January 10, 2002
    Inventor: Paul J. Yancey
  • Publication number: 20020002797
    Abstract: The present invention provides an abrasive composition for polishing magnetic recording disk substrates that results in a low surface roughness of the magnetic recording disk, allows the attaining of high-density recording without the occurrence of protrusions or polishing scratches, and enables polishing to be performed at an economical speed. The present invention discloses an abrasive composition for polishing magnetic recording disk substrates comprising water, silicon dioxide, antigelling agent, aluminum nitrate and hydrogen peroxide.
    Type: Application
    Filed: January 23, 2001
    Publication date: January 10, 2002
    Inventors: Norihiko Miyata, Kiyoshi Tada, Kenji Tomita
  • Patent number: 6336945
    Abstract: The present invention relates to an abrasive composition for substrates of magnetic recording media, containing at least an abrasive, an abrasive auxiliary and water. The abrasive auxiliary comprises an aliphatic organic sulfate, an oxyalkylene alkyl ether sulfate or an amphoteric surface active agent, and the abrasive composition has a pH of 1 to 13.
    Type: Grant
    Filed: May 13, 1999
    Date of Patent: January 8, 2002
    Assignee: Kao Corporation
    Inventors: Yuzo Yamamoto, Manabu Shibata, Koji Taira, Toshiya Hagihara
  • Patent number: 6334880
    Abstract: Non-spherical silica particles having nodular morphology for use as an abrasive media in chemical mechanical polishing are disclosed. Also disclosed are aqueous slurries of monodispersed non-spherical nodular shaped particles having mean effective diameters between about 100 and 300 nanometers for chemical mechanical polishing. In addition aqueous slurries for the chemical mechanical polishing and planarization of oxide dielectric, metal, and metal/metallic compound interlayers of integrated circuits are disclosed.
    Type: Grant
    Filed: December 7, 1999
    Date of Patent: January 1, 2002
    Assignee: Silbond Corporation
    Inventors: John A. Negrych, George Haag, Peter E. Rall, William J. Corbell
  • Patent number: 6332831
    Abstract: A polishing composition for a memory hard disk, which comprises at least the following components (a) to (d): (a) from 0.1 to 50 wt %, based on the total amount of the polishing composition, of at least one abrasive selected from the group consisting of silicon dioxide, aluminum oxide, cerium oxide, zirconium oxide, titanium oxide, silicon nitride and manganese dioxide, (b) from 0.001 to 10 wt %, based on the total amount of the polishing composition, of at least one periodate selected from the group consisting of periodic acid, potassium periodate, sodium periodate and lithium periodate, (c) a buffer component to adjust the pH of the polishing composition to a range of from 2 to 5, and (d) water.
    Type: Grant
    Filed: April 6, 2000
    Date of Patent: December 25, 2001
    Assignee: Fujimi America Inc.
    Inventors: David M. Shemo, W. S. Rader, Toshiki Owaki
  • Patent number: 6332989
    Abstract: Copper metalization is planarized by CMP employing a slurry which avoids scratching the copper surface and is highly selective to the underlying barrier layer. Embodiments include CMP a copper filled damascene opening using a slurry comprising about 0.2 to about 0.7 wt. % Al2O3 and about 0.2 to about 2 wt. % oxalic acid to achieve a RMS no greater than about 10 Å.
    Type: Grant
    Filed: August 10, 2000
    Date of Patent: December 25, 2001
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Kai Yang, Steven Avanzino, Christy Mei-Chu Woo
  • Patent number: 6331134
    Abstract: A composition is provided in the present invention for polishing a composite composite semiconductor structure containing a metal layer (such as tungsten, aluminum, or copper), a barrier layer (such as tantalum, tantalum nitride, titanium, or titanium nitride), and an insulating layer (such as SiO2). The composition comprises an aqueous medium, an abrasive, an oxidant, an organic polymer that attenuates removal of the oxide film having a degree of polymerization of at least 5 and having a plurality of moieties having affinity to surface groups contained on silicon dioxide surfaces. The composition may optionally comprise a complexing agent and/or a dispersant.
    Type: Grant
    Filed: June 10, 1999
    Date of Patent: December 18, 2001
    Assignee: Rodel Holdings Inc.
    Inventors: Vikas Sachan, Elizabeth A. (Kegerise) Langlois, Qianqiu (Christine) Ye, Keith G. Pierce, Craig D. Lack, Terence M. Thomas, Peter A. Burke, David Gettman, Sarah Lane
  • Publication number: 20010049910
    Abstract: A chemical mechanical polishing slurry comprising an oxidizing agent, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, titanium nitride, tantalum and tantalum nitride containing layers from a substrate. The slurry does not include a separate film-forming agent.
    Type: Application
    Filed: March 18, 1998
    Publication date: December 13, 2001
    Inventors: VLASTA BRUSIC KAUFMAN, RODNEY C. KISTLER, SHUMIN WANG
  • Publication number: 20010049912
    Abstract: The invention provides an aqueous dispersion for chemical mechanical polishing that can limit scratches of a specific size to a specific number, even with interlayer insulating films with small elastic moduli (silsesquioxane, fluorine-containing SiO2, polyimide-based resins, and the like.). When using the aqueous dispersion for chemical mechanical polishing of an interlayer insulating film with an elastic modulus of no greater than 20 GPa as measured by the nanoindentation method, the number of scratches with a maximum length of 1 &mgr;m or greater is an average of no more than 5 per unit area of 0.01 mm of the polishing surface. An aqueous dispersion for CMP or an aqueous dispersion for interlayer insulating film CMP according to another aspect of the invention contains a scratch inhibitor agent and an abrasive. The scratch inhibitor may be biphenol, bipyridyl, 2-vinylpyridine, salicylaldoxime, o-phenylenediamine, catechol, 7-hydroxy-5-methyl-1,3,4-triazaindolizine, and the like.
    Type: Application
    Filed: March 26, 2001
    Publication date: December 13, 2001
    Applicant: JSR Corporation
    Inventors: Masayuki Motonari, Masayuki Hattori, Nobuo Kawahashi
  • Patent number: 6328774
    Abstract: A polishing composition for a memory hard disk, which comprises at least the following components (a) to (d): (a) from 0.1 to 50 wt %, based on the total amount of the polishing composition, of at least one abrasive selected from the group consisting of silicon dioxide, aluminum oxide, cerium oxide, zirconium oxide, titanium oxide, silicon nitride and manganese dioxide, (b) from 0.001 to 10 wt %, based on the total amount of the polishing composition, of at least one periodate selected from the group consisting of periodic acid, potassium periodate, sodium periodate and lithium periodate, (c) from 0.01 to 30 wt %, based on the total amount of the polishing composition, of at least one peroxydisulfate salt selected from the group consisting of ammonium peroxydisulfate, potassium peroxydisulfate and sodium peroxydisulfate, and (d) water, and which has a pH of from 2 to 7.
    Type: Grant
    Filed: February 23, 2000
    Date of Patent: December 11, 2001
    Assignee: Fujimi America Inc.
    Inventors: David M. Shemo, W. Scott Rader, Toshiki Owaki
  • Patent number: 6325705
    Abstract: A chemical-mechanical polishing slurry made by mixing a ferric salt oxidizer with a solution to produce a mixture with a dissolved ferric salt oxidizer, filtering the mixture to remove most preexisting particles therein that exceed a selected particle size, adding a suspension agent to the mixture, and adding abrasive particles to the mixture after filtering the mixture. Advantageously, when polishing occurs, scratching by the preexisting particles is dramatically reduced.
    Type: Grant
    Filed: December 28, 2000
    Date of Patent: December 4, 2001
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Peter A. Burke, Peter J. Beckage
  • Publication number: 20010045063
    Abstract: Polishing compositions are described that are appropriate for fine polishing to very low tolerances. The polishing compositions include particles with small diameters with very narrow distributions in size and effectively no particles with diameters several times larger than the average diameter. Furthermore, the particles generally have very high uniformity with respect to having a single crystalline phase. Preferred particles have an average diameter less than about 200 nm. Laser pyrolysis processes are described for the production of the appropriate particles including metal oxides, metal carbides, metal sulfides, SiO2 and SiC.
    Type: Application
    Filed: April 24, 2001
    Publication date: November 29, 2001
    Inventors: Nobuyuki Kambe, Xiangxin Bi
  • Patent number: 6322600
    Abstract: A planarization composition is set forth for chemical mechanical planarization of dielectric layers for semiconductor manufacture. The composition comprises spherical silica particles having an average diameter of from 30 nm to about 400 nm, and a narrow range of particle sizes, wherein about 90% of the particles is within 20% of the average particle diameter. The composition includes a liquid carrier comprising up to about 9% alcohol and an amine hydroxide in the amount of about 0.2 to about 9% by weight. The pH of the composition is in the range of about 9 to about 11.5, and the remainder of the solution is water. The composition has low amounts of metal ions, and the composition is used for thinning, polishing and planarizing interlayer dielectric thin films, shallow trench isolation structures, and isolation of gate structures. The invention also comprises methods for using the planarization composition in the manufacture of semiconductor devices.
    Type: Grant
    Filed: April 22, 1998
    Date of Patent: November 27, 2001
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Richard Brewer, Thomas J. Grebinski, James E. Currie, Michael Jones, William Mullee, Ann Nguyen
  • Publication number: 20010039766
    Abstract: There is provided an aqueous dispersion for CMP with an excellent balance between chemical etching and mechanical polishing performance. The aqueous dispersion for CMP of the invention is characterized by comprising an abrasive, water and a heteropolyacid. Another aqueous dispersion for CMP according to the invention is characterized by comprising an abrasive, water, a heteropolyacid and an organic acid. Yet another aqueous dispersion for CMP according to the invention is characterized by comprising colloidal silica with a primary particle size of 5-100 nm, water and a heteropolyacid. Preferred for the heteropolyacid is at least one type selected from among silicomolybdic acid, phosphorotungstic acid, silicotungstic acid, phosphoromolybdic acid and silicotungstomolybdic acid. Preferred for the organic acid is at least one selected from among oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, maleic acid, fumaric acid, phthalic acid, malic acid, tartaric acid and citric acid.
    Type: Application
    Filed: February 8, 2001
    Publication date: November 15, 2001
    Applicant: JSR Corporation
    Inventors: Masayuki Hattori, Kiyonobu Kubota, Kazuo Nishimoto, Nobuo Kawahashi
  • Patent number: 6315803
    Abstract: Object: To provide a polishing composition which is capable of polishing a tantalum-containing compound at a high stock removal rate and whereby the copper surface after polishing is scarcely corroded, and to provide a polishing process where dishing can be minimized. Means to accomplish the object: A polishing composition comprising an abrasive, oxalic acid, an ethylenediamine derivative, a benzotriazole derivative and water and not containing an oxidizing agent, and a polishing composition comprising an abrasive, oxalic acid, an ethylenediamine derivative, a benzotriazole derivative, water and hydrogen peroxide.
    Type: Grant
    Filed: December 1, 1999
    Date of Patent: November 13, 2001
    Assignee: Fujimi Incorporated
    Inventors: Katsuyoshi Ina, Tadahiro Kitamura
  • Patent number: 6312486
    Abstract: A slurry composition enhances the removal of polish-resistant surface moieties from the surface of a semiconductor wafer during chemical-mechanical polishing. The slurry composition is a mixture including a solvent, a plurality of abrasive particles, and a chelating agent. The abrasive particles abrade the surface of the wafer to remove surface moieties and underlying material. The chelating agent is selected to react with polish-resistant surface moieties on the surface of the wafer surface, to thereby render the surface moieties easier to remove from the surface layer with substantially non-aggressive chemical-mechanical polishing techniques. In operation, the surface moieties and the underlying bulk material are removed by a combination of the chemical effects of the chelating agent and the mechanical effects of the abrasive particles.
    Type: Grant
    Filed: June 27, 2000
    Date of Patent: November 6, 2001
    Assignee: Micron Technology, Inc.
    Inventors: Gurtej Singh Sandhu, Donald Westmoreland, Daniel Koos
  • Patent number: 6312487
    Abstract: A polishing compound in the form of a dispersion containing silicon oxide particles having an average diameter of 8 to 500 manometers and at least one kind of metal compound particles having an average diameter of 10 to 3000 nanometers and selected from metal oxides, metal nitrides and metal carbides. The concentration of silicon oxide particles is 1 to 15 wt. %. The concentration of silicon oxide particles is 0.1 to 10 wt. %. The pH of the dispersion is 8.3 to 11.5, and is buffered by the addition of a buffering combination composed of weak acid and/or weak base, wherein the logarithms of reciprocal number of acid dissociation constant at 25° C. of the weak acid and/or weak base is 8.0 to 12.5.
    Type: Grant
    Filed: May 6, 1999
    Date of Patent: November 6, 2001
    Assignee: Speedfam Co Ltd
    Inventor: Hiroaki Tanaka
  • Patent number: 6313039
    Abstract: A composition for chemical mechanical polishing that includes a slurry is described. A sufficient amount of a selectively oxidizing and reducing compound is provided to produce a differential removal of a metal and a dielectric material. A pH adjusting compound adjusts the pH of the composition to provide a pH that makes the selectively oxidizing and reducing compound provide the differential removal of a metal and a dielectric material. A composition may include an effective amount of an hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, and a peracetic acid or periodic acid. A method for chemical mechanical polishing is described which includes applying a slurry that includes the composition to a surface to produce mechanical removal of the metal and dielectric material.
    Type: Grant
    Filed: January 11, 2000
    Date of Patent: November 6, 2001
    Assignee: EKC Technology, Inc.
    Inventors: Robert J. Small, Laurence McGhee, David J. Maloney, Maria L. Peterson
  • Publication number: 20010034979
    Abstract: There is disclosed a process for preparing a metal oxide CMP slurry suitable for semiconductor devices, wherein a mixture comprising 1 to 50 weight % of a metal oxide and 50 to 99 weight % of water is mixed in a pre-mixing tank, transferred to a dispersion chamber with the aid of a transfer pump, allowed to have a flow rate of not less than 100 m/sec by pressurization with a high pressure pump, and subjected to counter collision for dispersion through two orifices in the dispersion chamber. The slurry has particles which are narrow in particle size distribution, showing an ultrafine size ranging from 30 to 500 nm. Also, the slurry is not polluted at all during its preparation and shows no tailing phenomena, so that it is preventive of &mgr;-scratching. Therefore, it can be used in the planarization for shallow trench isolation, interlayer dielectrics and inter metal dielectrics through a CMP process.
    Type: Application
    Filed: May 31, 2001
    Publication date: November 1, 2001
    Inventors: Kll Sung Lee, Jae Seok Lee, Seok Jin Kim, Tu Won Chang
  • Patent number: 6309434
    Abstract: A polishing composition for a magnetic disk substrate to be used for a memory hard disk, which comprises: (a) colloidal silica as an abrasive in an amount within a range of from 0.1 to 35 wt % based on the total weight of the composition; (b) iron nitrate as a polishing accelerator in an amount within a range of from 0.04 to 2.2 wt % based on the total weight of the composition; (c) citric acid as a stabilizer in an amount within a range of from 0.4 to 22 wt % based on the total weight of the composition; (d) hydrogen peroxide as a polishing acceleration assistant in an amount within a range of from 0.155 to 9.3 wt % based on the total weight of the composition; and (e) water.
    Type: Grant
    Filed: September 7, 2000
    Date of Patent: October 30, 2001
    Assignee: Fujimi Incorporated
    Inventor: Keigo Ohashi
  • Publication number: 20010029705
    Abstract: A composition for polishing magnetic disk substrates having an Ni—P plating, comprising water, silicon oxide, a metal coordination compound, and an oxidizing agent. The composition may further contain a pH adjusting agent.
    Type: Application
    Filed: December 27, 2000
    Publication date: October 18, 2001
    Inventor: Norihiko Miyata
  • Publication number: 20010030876
    Abstract: A self-cleaning automotive head lamp, wherein the inner surface of the lens has applied to it an amphiphilic coating containing a photocatalyst.
    Type: Application
    Filed: December 4, 2000
    Publication date: October 18, 2001
    Inventors: Ing-Feng Hu, Paul J. O'Connor, Yi-Hung Chiao
  • Patent number: 6299795
    Abstract: The polishing slurry includes polishing particles having a mean particle diameter of less than about 5 &mgr;m. The slurry contains at least about 0.5 weight percent oxidizer selected from at least one of the group consisting of HNO3, Ni(NO3)2, Al(NO3)3, Mg(NO3)2, Zn(NO3)2 and NH4NO3. A small but effective amount of a co-oxidizer selected from the group consisting of perbromates, perchlorates, periodates, persulfates, permanganates and ferric nitrate accelerates removal of substrates; and water forms the balance of the aqueous slurry.
    Type: Grant
    Filed: January 18, 2000
    Date of Patent: October 9, 2001
    Assignee: Praxair S.T. Technology, Inc.
    Inventors: Lei Liu, Doris Kwok
  • Patent number: 6299659
    Abstract: A polishing-material composition, for polishing of LSI devices, which is a polishing-material composition comprising water and cerium oxide which has been surface-treated with a coupling agent, wherein the maximum value is no greater than about 5 &mgr;m and the average value is about 0.01-1.0 &mgr;m in the secondary particle size distribution of the cerium oxide. Also, a polishing method for LSI devices which employs the polishing-material composition.
    Type: Grant
    Filed: May 4, 2000
    Date of Patent: October 9, 2001
    Assignee: Showa Denko K.K.
    Inventors: Takanori Kido, Fumio Tsujino, Kagetaka Ichikawa, Nobuo Uotani