Abstract: Embodiments of the invention generally relate to a method for selectively etching or otherwise removing copper or other metallic contaminants from a substrate, such as a gallium arsenide wafer. In one embodiment, a method for selectively removing metallic contaminants from a substrate surface is provided which includes exposing a substrate to a peroxide clean solution, exposing the substrate to a hydroxide clean solution, and exposing the substrate to a selective etch solution containing potassium iodide, iodine, sulfuric acid, and water during a selective etch process. The substrate generally contains gallium arsenide material, such as crystalline gallium arsenide, and is usually a growth substrate for an epitaxial lift off (ELO) process. The copper or other metallic contaminants disposed on the substrate may be selectively etched at a rate of about 500 times, about 1,000 times, about 2,000 times, or about 4,000 times or greater than the gallium arsenide material.

Abstract: Water treatment compositions are provided that are effective for mitigating corrosion or fouling of surfaces in contact with aqueous systems. The water treatment compositions can include one or more azole compounds, one or more transition metals, and one or more dispersants, in addition to various other additives. The water treatment compositions can exclude phosphorus and still be effective. Methods for mitigating corrosion or fouling of a surface in an aqueous system are also provided.

Abstract: A method for cleaning a deposition chamber includes forming a deposited layer over an interior surface of the deposition chamber, wherein the deposited layer has a deposited layer stress and a deposited layer modulus; forming a cleaning layer over the deposited layer, wherein a material comprising the cleaning layer is selected such that the cleaning layer adheres to the deposited layer, and has a cleaning layer stress and a cleaning layer modulus, wherein the cleaning layer stress is higher than the deposited layer stress, and wherein the cleaning layer modulus is higher than the deposited layer modulus; and removing the deposited layer and the cleaning layer from the interior of the deposition chamber.

Abstract: A method for cleaning a deposition chamber includes forming a deposited layer over an interior surface of the deposition chamber, wherein the deposited layer has a deposited layer stress and a deposited layer modulus; forming a cleaning layer over the deposited layer, wherein a material comprising the cleaning layer is selected such that the cleaning layer adheres to the deposited layer, and has a cleaning layer stress and a cleaning layer modulus, wherein the cleaning layer stress is higher than the deposited layer stress, and wherein the cleaning layer modulus is higher than the deposited layer modulus; and removing the deposited layer and the cleaning layer from the interior of the deposition chamber.

Abstract: An ice dispensing system includes an ice hopper structure including a plurality of walls having inner surfaces that define an inner volume storing ice therein. The ice hopper may include a drain. A cleaning structure is coupled to the ice hopper structure. The cleaning structure includes a pump linked to a spray mechanism positioned within the inner volume of the ice hopper structure. The spray mechanism disperses a liquid on an inner surface of the ice hopper structure during a cleaning cycle of the ice dispensing mechanism.

Abstract: A liquid processing method is provided for performing a liquid process on a front surface of a substrate by using a processing solution and then performing a rinse process on the front surface of the substrate by using a rinse solution having a temperature lower than a temperature of the processing solution. The method includes performing an intermediate process between the liquid process and the rinse process, for adjusting a temperature of the front surface of the substrate to a temperature higher than the temperature of the rinse solution and lower than the temperature of the processing solution. In the intermediate process, an intermediate processing solution having a temperature higher than the temperature of the rinse solution and lower than the temperature of the processing solution is supplied only to a rear surface of the substrate.

Abstract: A silicon wafer cleaning agent includes at least a water-based cleaning liquid, and a water-repellent cleaning liquid for providing water-repellent to an uneven pattern at least at recessed portions during a cleaning process. The water-repellent cleaning liquid is a liquid composed of a water-repellent compound containing a reactive moiety which is chemically bondable to Si in the silicon wafer, and a hydrophobic group, or is a liquid wherein 0.1 mass % or more of the water-repellent compound relative to the total quantity of 100 mass % of the water-repellent cleaning liquid and an organic solvent are mixed and contained therein. A cleaning process wherein a pattern collapse is easily induced can be improved by using the cleaning agent.

Abstract: A method of washing a bulk container is provided. The method includes receiving the bulk container on a support surface and rotating the support surface and at least one washer arm relative to one another. The method further includes spraying a fluid from at least one nozzle disposed on the at least one washer arm. Rotating the support surface and the at least one washer arm relative to one another exposes a plurality of portions of an outer surface of the bulk container to the spray.

Abstract: A substrate processing device 10 has a water removing unit 110 and, when a solvent supply unit 58 supplies a volatile solvent to a surface of a substrate W, the water removing unit 110 supplies a water removing agent to the surface of the substrate W to promote replacement of the cleaning water on the surface of the substrate W with the volatile solvent.

Abstract: A substrate processing apparatus includes a substrate holder, and a discharge head for peripheral area from which a fluid is discharge toward a surface peripheral area of the substrate held on the substrate holder. The discharge head for peripheral area includes multiple nozzles, and a support part that supports the nozzles integrally. The nozzles include a processing liquid nozzle from which a processing liquid is discharged toward the surface peripheral area, and a gas nozzle from which gas is discharged toward the surface peripheral area. The gas nozzle is placed upstream of a rotative direction of the substrate relative to the processing liquid nozzle.

Abstract: A substrate treatment method is provided, which includes a rinsing step of supplying a rinse liquid to a front surface of a rotating substrate after a chemical liquid step. The rinsing step includes a higher-speed rinsing step and a deceleration rinsing step to be performed after the higher-speed rinsing step. The deceleration rinsing step includes a liquid puddling step of reducing the rotation speed of the substrate within a rotation speed range lower than a rotation speed employed in the higher-speed rinsing step and supplying the rinse liquid to the front surface of the substrate at a flow rate higher than a maximum supply flow rate employed in the higher-speed rinsing step, whereby a puddle-like rinse liquid film is formed on the front surface of the substrate.

Abstract: A cleaning composition and process to remove carbon deposits from combustion equipment components is provided. The de-carbonizing composition is packaged in certain embodiments in an aerosol propellant. The inventive composition is also readily used as a liquid or an atomized mist that is readily introduced into the intake manifold through a tube tolerant of engine inlet operational temperatures and conditions. The invention introduces the composition by a process that precludes the need for engine disassembly.

Abstract: A method for cleaning a water purifier comprising: a filtering unit; a water tank unit for storing purified water having passed through the filtering unit; and a discharging unit for discharging out the purified water stored in the water tank unit, the method comprises: a cleaning water supplying step of supplying cleaning water in which a cleaning agent is dissolved to the water tank unit; a cleaning water discharging step of discharging the cleaning water when a predetermined time has lapsed; a rinsing water supplying step of supplying rinsing water to the water tank unit when the cleaning water discharging step has been completed; and a rinsing water discharging step of discharging the rinsing water when a predetermined time has lapsed. In the method, cleaning and rinsing processes for a water purifier are automatically executed by a series of consecutive processes. Accordingly, a user can directly clean the water purifier if necessary without requiring a Codi's visit.

Abstract: Apparatus and method for removing an ink image from a plastic substrate, particularly a plastic container such as a cup, are provided. A solvent capable of solvating the ink image is utilized in order to de-ink articles so that they can be recycled and re-imprinted thereby reducing waste associated with printing line start up. As the articles may be intended for use with food and beverage products, a safe and non-toxic solvent may be selected. However, to ensure that the article is not contaminated with foreign materials prior to human use, the de-inked article may undergo a rinse and drying operation to remove solvent residues and UV light treatment to eliminate any harmful microorganisms that may be present on the article's surfaces.

Abstract: The present invention discloses a method of reducing contamination in a CVD chamber. The method comprises cleaning the CVD chamber with first cleaning gases containing NF3; removing the particles in the CVD chamber with second cleaning gases containing N2; further removing the particles in the CVD chamber with third cleaning gases containing O2; and seasoning an amorphous carbon layer with mixed gases containing C2H2 and an inert gas.

Abstract: A substrate processing method includes an SPM supplying step of supplying SPM having high temperature to an upper surface of a substrate, a DIW supplying step of supplying, after the SPM supplying step, DIW having room temperature to the upper surface of the substrate to rinse off a liquid remaining on the substrate, and a hydrogen peroxide water supplying step of supplying, after the SPM supplying step and before the DIW supplying step, hydrogen peroxide water of a liquid temperature lower than the temperature of the SPM and not less than room temperature, to the upper surface of the substrate in a state where the SPM remains on the substrate.

Abstract: A multiple stage processing device having a plurality of radial stages, each individual radial stage is positioned between adjacent dividing walls and indexable though a plurality of processing stations. A plurality of fixture mount assemblies are positioned on an actuation surface of the rotatable indexing assembly, each individual fixture mount assembly is associated with and mechanically coupled to an individual radial stage. One or more slotted drive hubs communicatively coupled to independently operable drive motors are positioned adjacent to the actuation surface of the rotatable indexing assembly and are engageable with the plurality of fixture mount assemblies.

Abstract: Drying a microelectronic topography. At least some of the illustrative embodiments are methods that include placing a microelectronic topography inside a process chamber, providing a non-aqueous liquid to the process chamber until at least 90% of the volume of the process chamber contains the non-aqueous liquid, pressurizing the process chamber by way of a fluid different than the non-aqueous liquid, ceasing activity with respect to the process chamber until the non-aqueous liquid and fluid form a mixture that is substantially homogenous, venting the process chamber while simultaneously providing the fluid to the process chamber, and venting the process chamber in a manner which prevents formation of liquid in the process chamber.

Abstract: A method for operating a water-conducting domestic appliance, including a domestic dishwasher, wherein the water-conducting domestic appliance includes a program controller for performing a plurality of sequential program steps and the program controller operatively interacts with at least a detergent-dosing system, the method including the step of adding at least one cleaning substance having a function during at least one program step.

Abstract: A special mode has a second rinsing process which supplies a rinsing liquid to a substrate while holding and rotating the substrate with a spin chuck under operating conditions different from those in a first rinsing process in a normal mode. In the second rinsing process, a processing cup is cleaned with the rinsing liquid flown off from the rotating substrate. In the second rinsing process in which the substrate is held by the spin chuck, the rinsing liquid flown off from the substrate is less prone to collide with chuck members. The provision of a mechanism designed specifically for the cleaning of the cup is not required in the special mode. The special mode is a mode executable when a substrate is present inside a chamber, and can be executed in the middle of lot processing.

Abstract: An ozone supply module for supplying ozonated water to an appliance that typically includes: an appliance module housing having a water inlet; a water outlet; and an electrical connection for receiving electrical power; a proton exchange membrane cell positioned within the housing; and a water conveying system within the module housing and operably connected to both the water inlet and water outlet. The water conveying system is typically configured to allow water to flow through the deionizing resin and into contact with the proton exchange membrane cell. The module and the proton exchange membrane cell receive electrical power from a home appliance when the module is operably connected to the appliance. The module produces water that contains (dissolved) ozone to be delivered to a chamber within the appliance when the module is in the engaged position with the appliance. The appliance is typically a residential appliance.

Abstract: The present invention relates, in part, to cleaning methods and solvent cleaning compositions including at least one hydrofluoro-olefin or hydrochlorofluoro-olefin solvent for use in connection with cleaning of metal parts, and in certain preferred embodiments cleaning metal parts to be used in an aircraft.

Abstract: There is provided a liquid processing method for performing a liquid process on a front surface of a substrate by using a processing solution and then performing a rinse process on the front surface of the substrate by using a rinse solution having a temperature lower than a temperature of the processing solution. The liquid processing method includes performing an intermediate process between the liquid process and the rinse process, for adjusting a temperature of the front surface of the substrate to a temperature higher than the temperature of the rinse solution and lower than the temperature of the processing solution.

Abstract: A dewaxing device and a method of dewaxing using the dewaxing device are shown. The dewaxing device includes a dewaxing system including a rinsing device and a storage device, and a recycling system connected with the storage device. The storage device includes a first solvent trough and a second solvent trough of which each is connected with the rinsing device and is equipped with a heating equipment. When the first solvent trough is connected with the rinsing device, the second solvent trough is disconnected with the rinsing device; when the second solvent trough is connected with the rinsing device, the first solvent trough is disconnected with the rinsing device. So, the dewaxing device can provide two dewaxing processes and effectively reduce recycling frequency because the recycling process is done after soluble wax quantity of bromopropane solvent reaches the maximum value 16%. The production cost is accordingly reduced.

Abstract: A method of cleaning a semiconductor substrate includes forming a water repellant protection film using a chemical liquid including a silane coupling agent on a surface of the semiconductor substrate; substituting the chemical liquid including the silane coupling agent with an alcohol; substituting the alcohol with a diluted alcohol; and substituting the diluted alcohol with pure water.

Abstract: Disclosed are a liquid processing apparatus and a liquid processing method that can prevent a substrate in a processing chamber from being contaminated due to contamination attached to a cup. The liquid processing apparatus includes: a processing chamber in which a substrate holding unit holding a substrate and a cup placed around the substrate holding unit are installed; a nozzle for supplying a processing liquid to the substrate held by the substrate holding unit; and a cup cleaning unit cleaning the cup by supplying a cleaning liquid to the upper part of the cup. A concave portion is formed in the upper part of the cup and the cup cleaning units supply the cleaning liquid to the concave portion in the upper part of the cup.

Abstract: A method of cleaning at least one optical component of at least one irradiation device having at least one radiation source in a vacuum chamber. The source generates in particular extreme ultraviolet and/or soft X-ray radiation whose rays are guided via the optical component onto a workpiece to be treated, during which the optical component is at least partly polluted because of an inorganic substance introduced by the radiation source. A least one reaction partner that is substantially translucent or transparent to the rays is introduced via a feeder device in dependence on the prevailing reaction conditions. The reaction partner reacts chemically with the polluting deposits so as to remove them from the optical component.

Abstract: An apparatus for cleaning a substrate is disclosed. The apparatus includes a first chamber through which a substrate is conveyed, a second chamber where an oxide film formed on the substrate conveyed from the first chamber is removed; and a third chamber that discharges the substrate conveyed from the second chamber to the outside after rinsing the substrate, wherein the first chamber and the third chamber are disposed on top and on bottom.

Abstract: Some embodiments include methods of removing particles from over surfaces of semiconductor substrates. Liquid may be flowed across the surfaces and the particles. While the liquid is flowing, electrophoresis and/or electroosmosis may be utilized to enhance transport of the particles from the surfaces and into the liquid. In some embodiments, temperature, pH and/or ionic strength within the liquid may be altered to assist in the removal of the particles from over the surfaces of the substrates.

Abstract: A method of texturizing a silicon substrate comprising a) contacting the substrate with an etching solution comprising glycolic acid, b) etching a surface of the substrate thereby forming disruptions in said surface of the substrate, and c) removing the etching solution to yield a texturized substrate, said texturized substrate having a plurality of disruptions in at least one surface with a surface density of disruptions of a minimum of 60 disruptions in a 400 micron square area.

Abstract: Cleaning of a hot dip galvanized steel sheet is conducted by bringing a strip-shaped steel sheet which was treated by surface oxidation in advance into contact with a cleaning liquid for 1 second or more, and then bringing the hot dip galvanized steel sheet into contact with pure water, while continuously transferring the hot dip galvanized steel sheet. The method allows efficiently and fully washing off the acidic solution adhered to the surfaces of the hot dip galvanized steel sheet treated by surface oxidation. The invention also provides an apparatus for cleaning the hot dip galvanized steel sheet to carry out the above cleaning method.

Abstract: A method of selecting a mercury-contaminated solid surface followed by heating a cleaning solution to a temperature less than 100° C. The cleaning solution can contain hydrocarbon oil and one or more organic sulfur compounds. Afterwards, the heated cleaning solution is contacted with the mercury-contaminated solid surface to remove the mercury contamination.

Abstract: A method for cleaning a surface of a plate-like article includes the steps of: treating the surface with free flow cleaning, wherein liquid is dispensed through a dispense nozzle onto the surface in a continuous liquid flow, and treating the surface with spray cleaning, wherein liquid is directed through a spray nozzle towards the surface in form of droplets. The surface is treated with a spray cleaning step before the free flow cleaning step and a spray cleaning step after the free flow cleaning step.

Abstract: The molecular etcher carbonyl fluoride (COF2) or any of its variants, are provided for, according to the present invention, to increase the efficiency of etching and/or cleaning and/or removal of materials such as the unwanted film and/or deposits on the chamber walls and other components in a process chamber or substrate (collectively referred to herein as “materials”). The methods of the present invention involve igniting and sustaining a plasma, whether it is a remote or in-situ plasma, by stepwise addition of additives, such as but not limited to, a saturated, unsaturated or partially unsaturated perfluorocarbon compound (PFC) having the general formula (CyFz) and/or an oxide of carbon (COx) to a nitrogen trifluoride (NF3) plasma into a chemical deposition chamber (CVD) chamber, thereby generating COF2. The NF3 may be excited in a plasma inside the CVD chamber or in a remote plasma region upstream from the CVD chamber.

Abstract: Embodiments of the present invention include a hose handling system having a hose guide plumbed via a wash line to a fluid delivery device. The hose guide includes a pulley installed on a frame member, and a spray nozzle adapted to dispense a wash mixture. The hose guide is adapted to guide a hose as the hose is inserted into or withdrawn from a manhole, with the hose traversing the pulley. The wash mixture can be delivered through a wash line to the hose guide, which sprays the wash mixture on the hose in order to reduce or eliminate gross contamination or microbial contamination on the hose. The wash mixture typically, but not necessarily, has a freezing point below 32 F and includes: a quaternary ammonium compound, an alcohol or glycol, an alcohol ethoxylate, and a fragrance.

Abstract: A method of cleaning a substrate such as semiconductor substrate for IC fabrication is described that includes cleaning the semiconductor substrate with a first mixture of ozone and one of an acid and a base, followed by a second mixture of ozone and the other one of the acid and the base. The cleaning mixtures may further include de-ionized water. In an embodiment, the mixture is sprayed onto a heated substrate surface. The acid may be HF; the base may be NH4OH.

Abstract: A composition which effervesces when added to water, comprises diamond particles with a median equivalent volumetric diameter (Dv50) of less than 40 ?m. The compositions are useful as cleaning compositions, particularly for cleaning diamonds.

Abstract: A method for treating a wafer is provided. The method includes at least the following steps. A plasma process is performed on a front surface of the wafer, and the wafer is cleaned. The wafer is cleaned by applying deionized water with dissolved CO2 to the front surface of the wafer and applying a chemical solution to a back surface, opposite to the front surface, of the wafer.

Abstract: Methods are presented for cleaning and removing powder or other substances which may result from a Color Run™-style event or from other events or circumstances. In one embodiment, a contamination area, i.e., an area where powder or some other substance has been disseminated, is cleaned by plugging one or more storm drains, using water to wash the powder into the storm drain(s), and then relocating the contaminated water from the storm drain(s) into one or more sewer drain(s) or other acceptable location(s). Additional steps may include pre-cleaning the anticipated contamination area, using a sweeper vacuum to clean up the powder, pre-washing the anticipated contamination area, pre-cleaning the storm drain(s), closing access to storm drains that will not be used, pre-treating with a sodium hypochlorite solution, and/or pretreating with a brine solution.

Abstract: The present invention increases a number of target reaction containers from one into many. Coordinated with increased reaction times, total reaction volume is increased. By modifying an affinitive column of an automatic synthesis system, a production in a single batch is increased. The products obtained can be conformed to quality check specifications with cost saved.

Abstract: A machine dishwashing method comprises: dispensing two liquid cleansers or detergents A and B into the interior of a machine dishwasher during the cleaning dishwashing cycle, wherein the liquid detergent A has a pH at 20° C. of 6 to 9 and the liquid detergent B has a pH at 20° C. of 9 to 14 and is dispensed at cleaning cycle time t2; and wherein the liquid cleansers or detergents A and B comprise, respectively: A: 10% to 75% by weight of a detergent builder, 0.1% to 10% by weight of an enzyme, 24.9% to 89.9% by weight of a solvent; and B: 10% to 74.9% by weight of a detergent builder, 25% to 89.9% by weight of a solvent; and wherein neither liquid cleanser or detergent A nor liquid cleanser or detergent B individually comprises more than 2% by weight of a bleaching agent.

Abstract: An ozone supply module for supplying ozonated water to an appliance that typically includes: an appliance module housing having a water inlet; a water outlet; and an electrical connection for receiving electrical power; a proton exchange membrane cell positioned within the housing; and a water conveying system within the module housing and operably connected to both the water inlet and water outlet. The water conveying system is typically configured to allow water to flow through the deionizing resin and into contact with the proton exchange membrane cell. The module and the proton exchange membrane cell receive electrical power from a home appliance when the module is operably connected to the appliance. The module produces water that contains (dissolved) ozone to be delivered to a chamber within the appliance when the module is in the engaged position with the appliance. The appliance is typically a residential appliance.

Abstract: A method for quickly removing pollutants adhered to a predetermined optical member in an optical system. To remove the pollutants adhered to a lens (32A) disposed at the upper end of a projection optical system (PL), a cylindrical protecting member (53) is disposed through the openings in a reticle stage (22) and a reticle base (23). The bottom surface of a support section (56) at the tip section of a rod section (58) is brought into contact with the surface of the lens (32A) through the inner surface of the protecting member (53). A wiping cloth soaked with a washing solution containing hydrofluoric acid is attached to the bottom surface of the support section (56). The support section (56) is reciprocated via the rod section (58) to remove the pollutants on the lens (32A) with the wiping cloth.

Abstract: A corrosion prevention and control composition and method comprises combining primarily two-component polyurethane foam formed by reacting polyols with an isocyanate compound, and a 2 to 10 percent by weight of either an organic or inorganic gas-phase corrosion inhibitor. The closed cell foam provides a barrier protection for the underlying corrodible surface, while the inhibitor protects the metal from the absorbed moisture vapor, thereby preventing corrosion from occurring at the foam/metal interface. The resulting foam and inhibitor composition maintains better adhesion to the underlying corrodible structure in corrosive environments.

Abstract: Disclosed are a liquid processing apparatus and a liquid processing method in which a substrate is processed by a processing liquid in the form of liquid droplets. The liquid processing apparatus includes: a first processing liquid ejecting unit configured to eject a first processing liquid in a form of liquid droplets which contains pure water toward the surface of the substrate; and a second processing liquid ejecting unit configured to eject a second processing liquid as a continuous liquid stream toward the surface of the substrate processed by the first processing liquid in the form of the liquid droplets. The second processing liquid inverts a zeta potential on the surface of the substrate into a negative zeta potential.

Abstract: The present invention relates to an aqueous composition for removing soil at low temperatures from a surface to be cleaned, comprising a source of alkalinity, a surfactant, an iron(III) activator complex and a source of peroxide. The composition can be used for removing soil from a surface to be cleaned, preferably in a clean-out-of-place systems (COP) or in a clean-in-place system (CIP).

Abstract: The present invention is improved cleaning method using a composition having at least one ketone for cleaning organic residue.

Abstract: Disclosed are a liquid processing apparatus and a liquid processing method that can prevent a substrate in a processing chamber from being contaminated due to contaminants attached to a nozzle supporting arm. The liquid processing apparatus includes a processing chamber in which a substrate holder holding a substrate and a cup disposed around the substrate holder are provided; a nozzle configured to supply a fluid to the substrate held by the substrate holder; and a nozzle supporting arm configured to support the nozzle. A gas ejection mechanism is installed at the nozzle supporting arm to eject a gas toward a front end surface of the nozzle supporting arm.

Abstract: In a substrate processing method according to the present invention, a substrate is first processed using a chemical liquid. Next, the substrate is rinsed by supplying a rinsing liquid thereto while the substrate is being rotated. Thereafter, the substrate is dried while the substrate is being rotated. The drying of the substrate includes reducing a rotating speed of the substrate to a first rotating speed lower than that of the substrate during the rinsing of the substrate, while supplying the rinsing liquid to a central portion of the substrate; moving, from the central portion of the substrate toward a peripheral edge portion thereof, a rinsing liquid supply position to which the rinsing liquid is supplied, after the rotating speed of the substrate has been reduced to the first rotating speed; and supplying a drying liquid to the substrate, after the rinsing liquid supply position has been moved.

Abstract: The present disclosure provides a method for cleaning a chlorine membrane electrochemical cell.