Abstract: A cleaning agent for a silicon wafer (a first cleaning agent) contains at least a water-based cleaning liquid and a water-repellent cleaning liquid for providing at least a recessed portion of an uneven pattern with water repellency during a cleaning process. The water-based cleaning liquid is a liquid in which a water-repellent compound having a reactive moiety chemically bondable to Si element in the silicon wafer and a hydrophobic group, and an organic solvent including at least an alcoholic solvent are mixed and contained. With this cleaning agent, the cleaning process which tends to induce a pattern collapse can be improved.

Abstract: A hard surface cleaning composition, namely a bathroom cleaning composition, using fully neutralized ethanolamine citrate salts is disclosed. The cleaning composition is unexpectedly safe to use, environmentally-friendly and efficacious for removal of soap scum and water hardness stains at mildly acidic and/or alkaline pHs. Methods of using the same are disclosed.

Abstract: The embodiments describe methods for controlling the particles generated when cleaning and drying a wafer in a spin rinse dryer (SRD) module. In some embodiments, the substrate surface is cooled by dispensing deionized (DI) water across the surface of the substrate, while the substrate rests on the SRD chuck. In addition, a method for controlling the particles generated when sleeves in a processing module or SRD contact a substrate surface during a clamping operation or when the sleeves are removed from the substrate surface is provided. A bottom edge or lip of the sleeves and/or the surface of the wafer contacting the sleeve is wetted during clamping/unclamping operations. Alternatively, the substrate may be wetted prior to clamping/unclamping operations.

Abstract: A parts washer assembly including a reservoir that may have a contaminated fluid solution at a level and a cover with an opening formed therein on an open end of the reservoir. A clean rinse module including a flange, a tank, a first pump and a second pump that may be disposed in the reservoir contiguous with the cover so that the tank and the first and second pumps depend from the flange into the reservoir. The tank may include an opening above the level of the contaminated fluid solution. The first pump may be connected to the flange and in fluid communication with the tank.

Abstract: A cleaning material is applied to a surface of a substrate. The cleaning material includes one or more polymeric materials for entrapping contaminants present on the surface of the substrate. A rinsing fluid is applied to the surface of the substrate at a controlled velocity to effect removal of the cleaning material and contaminants entrapped within the cleaning material from the surface of the substrate. The controlled velocity of the rinsing fluid is set to cause the cleaning material to behave in an elastic manner when impacted by the rinsing fluid, thereby improving contaminant removal from the surface of the substrate.

Abstract: Methods of acidic warewashing are disclosed. The compositions can include other materials including surfactants and chelating agents, and are preferably phosphorous free. Methods of using the acidic compositions are also disclosed. Exemplary methods include using the acidic compositions together with other compositions, including alkaline compositions and rinse aids employed in an alternating alkaline/acid/alkaline manner. The methods also include acidic compositions that serve multiple roles.

Abstract: A semiconductor substrate cleaning method includes cleaning a semiconductor substrate formed with a line-and-space pattern, rinsing the substrate, supplying the rinse water to rinse the substrate, and drying the substrate. The rinsing includes supplying deionized water and hydrochloric acid into a mixing section to mix the deionized water and the hydrochloric acid into a mixture, heating the mixture in the mixing section by a heater, detecting a pH value and a temperature of the mixture by a pH sensor and a temperature sensor respectively, adjusting an amount of hydrochloric acid supplied into the mixing section so that the rinse water has a predetermined pH value indicative of acidity, and energizing or de-energizing the heater so that the temperature of the mixture detected by the temperature sensor reaches a predetermined temperature, thereby producing the rinse water which has a temperature of not less than 70° C. and is acidic.

Abstract: The present application relates to perfume raw materials, perfumes, perfume delivery systems and consumer products comprising such perfume raw materials, perfumes and/or such perfume delivery systems, as well as processes for making and using such perfume raw materials, perfume delivery systems and consumer products. The perfumes disclosed herein expand the perfume communities' options.

Abstract: A hard floor surface care process comprising a process of identifying, cleaning, polishing, and protecting manmade and natural stone hard floor surfaces having a single surface or multi-surface quality. The hard floor surface care process comprising an acid reactive or nonreactive hard floor surface identifying process; an emulsifying solution, agitating, and toweling cleaning process; a polishing process utilizing a lubricating solution with a polishing chemistry or pad, and a protecting process utilizing a protecting chemistry selected as a function of the identifying process.

Abstract: The present invention is generally directed toward methods of cleaning and descaling surfaces contaminated with food soils, especially clean-in-place systems. More particularly, the methods according to the present invention also provide for sanitizing of surfaces contaminated with food soils. Thus, there is provided a single cleaning cycle that may clean, sanitize, and descale food-soiled surfaces, and in certain embodiments, without the need for a pre-rinse step, using a non-chlorine detergent composition.

Abstract: A washer having a plurality of water inlet diffusers, each diffuser connected to a water inlet line for directing the flow of fluid into the washing chamber. The water is directed, i.e., sprayed against the surfaces of the washing chamber to modify (adjust) the temperature of the washing chamber gradually prior to the start of a particular phase of a washing cycle.

Abstract: Disclosed are a liquid processing method, a liquid processing apparatus, and a recording medium that can prevent convex portions of a target substrate from collapsing when a rinsing liquid is dried. A base surface of a target substrate is hydrophilized and the surfaces of convex portions become water-repellent by surface-processing the target substrate which includes a main body, a plurality of convex portions protruding from the main body, and a base surface formed between the convex portions on the substrate main body. Next, a rinsing liquid is supplied to the target substrate which has been subjected to the surface processing. Thereafter, the rinsing liquid is removed from the target substrate.

Abstract: A process/method for cleaning wafers that eliminates and/or reduces pitting caused by standard clean 1 by performing a pre-etch and then passivating the wafer surface prior to the application of the standard clean 1. The process/method may be especially useful for advanced front end of line post-CPM cleaning. In one embodiment, the invention is a method of processing a substrate comprising: a) providing at least one substrate; b) etching a surface of the substrate by applying an etching solution; c) passivating the etched surface of the substrate by applying ozone; and d) cleaning the passivated surface of the substrate by applying an aqueous solution comprising ammonium hydroxide and hydrogen peroxide.

Abstract: A process for treating the surface of a substrate in the manufacture of a semiconductor device. The process comprises providing a concentrated acid or base, a peroxide and water, and delivering the acid or base, the peroxide and the water to the surface of the substrate. The acid or base and the water are delivered separately to the surface of the substrate and allowed to mix on the surface, and the water is delivered in pulses. The present invention also provides an apparatus adapted to carry out this process.

Abstract: A method for in-situ cleaning of compressor blades in a gas turbine engine on an aircraft comprises the following sequential steps: Step 1—washing said compressor blades by spraying a first liquid composition into the engine; and Step 2—finally rinsing said washed compressor blades by spraying a second liquid composition into the engine, wherein the second liquid composition, has a freezing point of ?10° C. or below and is non-aqueous and hydrophilic.

Abstract: Processes are described to remove substances from substrates. In an embodiment, a process may include providing a substrate including a first side and a second side with a substance being disposed on at least a portion of the first side of the substrate. The process may also include contacting the substrate with a solution such that the first side of the substrate is coated with the solution, at least a portion of the second side is free of the solution and at least a portion of the substance is released from the first side of the substrate. Additionally, the process may include rinsing the substrate to remove at least a portion of the substance released from the first side of the substrate.

Abstract: A process is described that is useful for removing organic substances from substrates, for example, electronic device substrates such as microelectronic wafers or flat panel displays. A process is presented for applying a minimum volume of a chemical stripping composition as a coating to the inorganic substrate whereby sufficient heat is added and the organic substances are completely removed by rinsing. The process may be suitable for removing and, in some instances, completely dissolving photoresists of the positive and negative varieties, and especially negative dry film photoresist from electronic devices.

Abstract: There is provided a substrate processing method capable of preventing pattern collapse when a rinse solution is removed from a substrate on which a microscopic resist pattern is formed and also capable of reducing cost for processing the substrate by decreasing an amount of usage of a hydrophobicizing agent. The substrate processing method includes a rinse solution supply process (step S12) for supplying the rinse solution onto the substrate on which the resist pattern is formed; and a rinse solution removing process (steps S14 to S16) for removing the rinse solution from the substrate in an atmosphere including vapor of a first processing solution that hydrophobicizes the resist pattern.

Abstract: Scale formation on the electrode(s) of a liquor sensor can be prevented by continuously delivering a water-soluble scale inhibitor or dispersant into the vicinity of the electrodes of a liquor sensor device. Scale inhibitors include, for instance, polymers that are derived from acrylic acid, maleic acid, acrylamide acid, phosphonate, and combinations thereof. An aqueous mixture of scaling inhibitor continuously delivered to the probe tip of the liquor sensor that was placed in a kraft pulping liquor allowed the sensor to operate accurately for over a month without having to be cleaned of scale.

Abstract: A protective chuck is disposed on a substrate with a gas layer between the bottom surface of the protective chuck and the substrate surface. The gas layer protects a surface region against a fluid layer covering the substrate surface. In some embodiments, the pressure fluctuation at the gas layers is monitored, and through the dynamic feedback, the gas flow rate can be adjusted to achieve a desired operation regime. The dynamic control of operation regime setting can also be applied to high productivity combinatorial systems having an array of protective chucks.

Abstract: Methods are provided for making a treatment composition by loading active components into a high pressure vessel and pressurizing the high pressure vessel with carbon dioxide to reach a pressure within the high pressure vessel of about 400 pounds per square inch to about 1,070 pounds per square inch. The active components can include a protein denaturant and a surfactant, and optionally an acaricide. In one particular embodiment, this method can be used to clean a substrate, by loading the substrate into the high pressure vessel prior to pressurizing with carbon dioxide. Methods are also provided for treating a substrate to clean it from dust mites by delivering dry ice particles to the substrate, and vacuuming the substrate. Treatment compositions are also generally provided.

Abstract: An endoscope cleaning/disinfecting apparatus for processing an endoscope in a cleaning tank using a diluted chemical obtained by diluting a chemical with hot water in a dilution tank of the present invention introduces the hot water into the cleaning tank immediately before processing, introduces the hot water into the dilution tank after the temperature of the hot water introduced into the cleaning tank falls within a specified temperature range, generates the diluted chemical, introduces the diluted chemical into the cleaning tank and processes the endoscope.

Abstract: Caustic-free detergent compositions are provided. Detergent compositions including an aminocarboxylate, water conditioning agent, non-caustic source of alkalinity and water beneficially do not require the use of additional surfactants and/or polymers to provide suitable detergency and prevent scale build-up on treated surfaces. The detergent compositions are used with a sanitizer to employ the caustic-free detergent compositions are particularly suitable for use as low temperature ware wash detergents that beneficially reduce scale build-up. Methods of employing the caustic-free detergent compositions are also provided.

Abstract: Phosphorus-free detergent compositions are provided. Detergent compositions including an aminocarboxylate, water conditioning agent, source of alkalinity and water beneficially do not require the use of additional surfactants and/or polymers to provide suitable detergency and prevent scale build-up on treated surfaces. The detergent compositions are used with a sanitizer to employ the phosphorus-free detergent compositions for use as low temperature ware wash detergents that beneficially reduce scale build-up. Methods of employing the phosphorus-free detergent compositions are also provided.

Abstract: Provided is a method of descaling a mask that quickly and effectively removes a material attached to the mask. The method includes: directing a laser beam onto a material attached to the mask; and removing the material attached to the mask.

Abstract: In one embodiment, after rinsing a semiconductor substrate having a fine pattern formed thereon with pure water, the pure water staying on the semiconductor substrate is substituted with a water soluble organic solvent, and then, the semiconductor substrate is introduced into a chamber in a state wet with the water soluble organic solvent. Then, the water soluble organic solvent is turned into a supercritical state by increasing a temperature inside of the chamber. Thereafter, the inside of the chamber is reduced in pressure while keeping the inside of the chamber at a temperature enough not to liquefy the pure water (i.e., rinsing pure water mixed into the water soluble organic solvent), and further, the water soluble organic solvent in the supercritical state is changed into a gaseous state, to be discharged from the chamber, so that the semiconductor substrate is dried.

Abstract: A method of warewashing for the removal of starch is described herein. The method includes applying an alkaline composition to a dish, then applying an acidic composition to a dish, and then applying a second alkaline composition to the dish. The method may include additional steps. Compositions for using with the method are also disclosed. Finally, dish machines that may be used in accordance with the method are disclosed.

Abstract: A method for cleaning a substrate processing chamber, including processing a batch of substrates within a processing chamber defining one or more processing regions. Processing the batch of substrates may be executed in a sub-routine having various sub-steps including processing a substrate from the batch within the processing chamber, removing the substrate from the processing chamber, introducing ozone into the processing chamber, and exposing the chamber to ultraviolet light for less than one minute. The substrate batch processing sub-steps may be repeated until the last substrate in the batch is processed. After processing the last substrate in the batch, the method includes removing the last substrate from the processing chamber, introducing ozone into the processing chamber; and exposing the processing chamber to ultraviolet light for three to fifteen minutes.

Abstract: A method includes generating a solvent-containing vapor that contains a solvent. The solvent-containing vapor is conducted to a package assembly to clean the package assembly. The solvent-containing vapor condenses to form a liquid on a surface of the package assembly, and flows off from the surface of the package assembly.

Abstract: A system for removing debris from a surface of a photolithographic mask is provided. The system includes an atomic force microscope with a tip supported by a cantilever. The tip includes a surface and a nanometer-scaled coating disposed thereon. The coating has a surface energy lower than the surface energy of the photolithographic mask.

Abstract: A method for using a film formation apparatus for a semiconductor process to form a thin film on a target substrate while supplying a film formation reactive gas from a first nozzle inside a reaction chamber includes performing a cleaning process to remove a by-product film deposited inside the reaction chamber and the first nozzle, in a state where the reaction chamber does not accommodate the target substrate. The cleaning process includes, in order, an etching step of supplying a cleaning reactive gas for etching the by-product film into the reaction chamber, and activating the cleaning reactive gas, thereby etching the by-product film, and an exhaust step of stopping supply of the cleaning reactive gas and exhausting gas from inside the reaction chamber. The etching step is arranged to use conditions that cause the cleaning reactive gas supplied in the reaction chamber to flow into the first nozzle.

Abstract: The wet treatment of wafer-shaped articles is improved by utilizing a droplet generator designed to produce a spray of monodisperse droplets. The droplet generator is mounted above a spin chuck, and is moved across a major surface of the wafer-shaped article in a linear or arcuate path. The droplet generator includes a transducer acoustically coupled to its body such that sonic energy reaches a region of the body surrounding the discharge orifices. Each orifice has a width w of at least 1 ?m and at most 200 ?m and a height h such that a ratio of h to w is not greater than 1.

Abstract: In one aspect, a method of cleaning an electronic device manufacturing process chamber part is provided, including a) spraying the part with an acid; b) spraying the part with DI water; and c) treating the part with potassium hydroxide. Other aspects are provided.

Abstract: A process for cleaning a compound semiconductor wafer; the compound semiconductor wafer comprises, taking gallium arsenide (GaAs) as a representative, a group III-V compound semiconductor wafer. The process comprises the following steps: 1) treating the wafer with a mixture of dilute ammonia, hydrogen peroxide and water at a temperature not higher than 20° C.; 2) washing the wafer with deionized water; 3) treating the wafer with an oxidant; 4) washing the wafer with deionized water; 5) treating the wafer with a dilute acid solution or a dilute alkali solution; 6) washing the wafer with deionized water; and 7) drying the resulting wafer. The process can improve the cleanliness, micro-roughness and uniformity of the wafer surface.

Abstract: Processing and drying of a sample, such as a semiconductor or MEMS device, is performed in a single pressure chamber. The sample is sealed in the interior volume of the chamber, which has surfaces formed of a nickel-copper alloy. Hydroflouric acid (HF) is flowed into the sealed chamber to fill the interior volume and to contact the sample with HF. The HF is allowed to etch portions of the same for a desired time before removing the HF from the sealed chamber. After removal of the HF, the interior volume is cooled to a temperature less than 10° C. The sealed pressure chamber is filled with liquid carbon dioxide. The interior volume is then heated to a temperature greater than 31° C. and a pressure greater than 1072 psi (i.e., the critical point), after which gaseous carbon dioxide is exhausted from the sealed chamber to allow subsequent removal of the sample.

Abstract: A method of cleaning dishware with a liquid detergent composition having a hydrophobic emollient and a crystalline structurant to provide improved hand skin care benefits and superior grease cleaning and/or suds mileage.

Abstract: The invention relates to a method for adding a multi-component solid detergent additive during a program sequence of a water leading household appliance, in particular a dishwasher, wherein the household appliance comprises a compartment for storing the detergent additive. According to the invention, the liquid supply to the detergent additive stored in the compartment is effected in dependency of the program sequence, wherein in particular the liquid supply to the compartment is repeated at different times. Similarly a household appliance is provided with a device for adding a multi-component detergent additive.

Abstract: A method for controlling a dishwasher including the steps of first determining a steam operation mode for washing dishes and second determining at least one of a motor rotation speed, a number of repetitions of a steam supply step, a steam washing pattern, and an amount of detergent based on the determined steam operation mode.

Abstract: A method of simultaneously cleaning and disinfecting an industrial water system is described and claimed. The method involves the addition to the water of the industrial water system of a Compound selected from the group consisting of the alkali salts of chlorite and chlorate and mixtures thereof; and an acid, followed by allowing the water in the industrial water system to circulate for several hours. The reaction of the alkali salts of chlorite and chlorate and acid produces chlorine dioxide in-situ in the water of the industrial water system. The chlorine dioxide kills microorganisms and the acid acts to remove deposits upon the water-contact surfaces of the equipment. This cleaning and disinfecting method works in a variety of industrial water systems including cooling water systems.

Abstract: Mixtures containing concentrated sulfuric acid used for stripping photoresist from semiconductor wafer, such as SOM and SPM mixtures, are more quickly removed from a wafer surface using another liquid also containing high concentration of sulfuric acid, with the second liquid furthermore containing controlled small amounts of fluoride ion. The second liquid renders the wafer surface hydrophobic, which permits easy removal of the sulfuric acid therefrom by spinning and/or rinsing.

Abstract: The present invention provides methods of removing liquid from a barrier structure in the context of treating microelectronic workpieces with one or more treatment materials, including liquids, gases, fluidized solids, dispersions, combinations of these, and the like.

Abstract: A method of removing an unwanted constituent from a siliceous surface in which the method includes contacting the siliceous surface and the unwanted constituent with a multi-functional composition that includes water, a hydrophilic silane, and a surfactant, and drying the surface.

Abstract: The embodiments describe methods for controlling the particles generated when cleaning and drying a wafer in a spin rinse dryer (SRD) module. In some embodiments, the substrate surface is cooled by dispensing deionized (DI) water across the surface of the substrate, while the substrate rests on the SRD chuck. In addition, a method for controlling the particles generated when sleeves in a processing module or SRD contact a substrate surface during a clamping operation or when the sleeves are removed from the substrate surface is provided. A bottom edge or lip of the sleeves and/or the surface of the wafer contacting the sleeve is wetted during clamping/unclamping operations. Alternatively, the substrate may be wetted prior to clamping/unclamping operations.

Abstract: A method of cleaning and drying a semiconductor wafer including inserting a semiconductor wafer into a chamber of a cleaning tool, spinning the semiconductor wafer in a range of about 300 revolutions per minute to about 1600 revolutions per minute, and simultaneously spraying the semiconductor wafer with de-ionized water and a mixture of isopropyl alcohol and nitrogen.

Abstract: Embodiments of the current invention describe cleaning solutions to clean the surface of a photomask, methods of cleaning the photomask using at least one of the cleaning solutions, and combinatorial methods of formulating the cleaning solutions. The cleaning solutions are formulated to preserve the optical properties of the photomask, and in particular, of a phase-shifting photomask.

Abstract: Provided is a transfer mask which has a transfer pattern formed in a pattern-forming thin film provided on a transparent substrate and is adapted to be applied with exposure light having a wavelength of 200 nm or less. The pattern-forming thin film is made of a material containing silicon an a transition metal other than chromium and the chromium content in the film is less than 1.0×1018 atoms/cm3.

Abstract: A method and system for cleaning a surface of a substrate after an etching operation includes determining a plurality of process parameters associated with the surface of the substrate. The process parameters define characteristics related to the surface of the substrate such as characteristics of the substrate surface to be cleaned, contaminants to be removed, features formed on the substrate and chemicals used in the fabrication operations. A plurality of application chemistries are identified based on the process parameters. The plurality of application chemistries includes a first application chemistry as an emulsion having a first immiscible liquid combined with a second immiscible liquid and solid particles distributed within the first immiscible liquid.

Abstract: A method for treating substrates with treating liquids, using a treating tank for storing the treating liquids, a holding mechanism for holding the substrates in a treating position inside the treating tank, first and second treating liquid supply devices, a temperature control device, and a control device. A first treating liquid is supplied into the treating tank, then a second treating liquid of lower surface tension and higher boiling point than the first treating liquid is supplied, and placed in a temperature range above the boiling point of the first treating liquid and below the boiling point of the second treating liquid. Then the second treating liquid supply device may be controlled to replace the first treating liquid with the second treating liquid, while controlling the temperature control device to maintain the second treating liquid in the same temperature range.

Abstract: A system and method for removing polymer residue from around a metal gate structure formed on a surface of a substrate during a post-etch cleaning operation includes determining a plurality of process parameters associated with the metal gate structure and the polymer residue to be removed. A plurality of fabrication layers define the metal gate structure and the process parameters define characteristics of the fabrication layers and the polymer residue. A first cleaning chemistry and second cleaning chemistry are identified and a plurality of application parameters associated with the first and second cleaning chemistries are defined based on the process parameters. The first and second application chemistries are applied sequentially in a controlled manner using the application parameters to substantial remove the polymer residue while preserving the structural integrity of the gate structure.

Abstract: There is disclosed a coated-type silicon-containing film stripping process for stripping off to remove a coated-type silicon-containing film obtained by coating a silicon-containing film composition used in a lithography on a substrate, comprising, at least: a first step of treating the silicon-containing film with an acidic stripping solution containing sulphate ion and/or fluoride ion; and a second step of treating the silicon-containing film with an alkaline stripping solution containing a nitrogen compound. There can be provided a process for allowing a silicon-containing film, which has not been conventionally removed unless dry stripping is adopted, to be removed by a stripping process based on a stripping solution (wet stripping).