Abstract: Provided is a photomask cleaning apparatus. The apparatus may include a photomask chuck, a cleaning arm and a nozzle set. The nozzle set may be installed in an end portion of the cleaning arm. The nozzle set may include a first nozzle and a second nozzle. The first nozzle and the second nozzle may be a bar-type shape and parallel to each other.

Abstract: A substrate cleaning method that includes: a step in which, while a substrate holder is being continuously rotated, a to-be-discharged position of the cleaning liquid on the substrate is changed to an eccentric position deviated from the central part of the substrate, and a gas is discharged from a gas nozzle to the central part of the substrate so as to form a dried area of the cleaning liquid under a condition in which a shortest distance between an edge of a cleaning liquid flow output from the cleaning-liquid nozzle and an edge of a gas flow output from the gas nozzle is set between 9 mm and 15 mm.

Abstract: A washing machine suitable to effect a washing treatment, thermo-disinfection and possible drying of objects, including a washing chamber in which the objects to be treated are disposed, and a washing circuit including a plurality of exit paths for a washing liquid to be distributed toward the objects to be treated. On the bottom of the washing chamber, in association with a corresponding discharge aperture, valve means to discharge the washing liquid are disposed, which are directly connected to a pipe that discharges directly into the sewerage system.

Abstract: Liquid processing units 2 each for performing a liquid process on a substrate are arranged horizontally side by side, a gas exhaust pipe 3 for exhausting an atmosphere within the liquid processing units is provided under the liquid processing units 2 to be extended along an arrangement of the liquid processing units 2, and a flow control member group 402 is disposed under the gas exhaust pipe 3. Liquid supply main pipe 5 and liquid drain main pipe 6 are provided under the flow control member group 402 to be extended along the arrangement of the liquid processing units 2. Liquid supply branch pipes are branched from the liquid supply main pipe 5 and connected with the liquid processing unit 2 via the flow control member group 402, and liquid drain branch pipes are branched from the liquid drain main pipe 6 and connected with the liquid processing unit 2.

Abstract: An apparatus is provided that includes a substrate support assembly for holding the semiconductor substrate and a dispense head for applying a cleaning material to clean the contaminants from the substrate surface. The dispense head extends across a length of the semiconductor substrate and is positioned proximate to the substrate surface at a distance of between about 0.1 mm and about 4.5 mm. The proximate position enables application of a force to the cleaning material as it is applied to the substrate surface as a film, and the cleaning material provided through the dispense head contains a cleaning liquid, a plurality of solid components, and polymers of a polymeric compound, each of the plurality of solid components and polymers being greater than zero and less than 3% of the cleaning material, the plurality of solid components and the polymers are dispersed for application through the dispense head.

Abstract: A cleaning system for removing contaminants on a surface of a patterned substrate for defining integrated circuit devices is provided. The system includes a substrate carrier for supporting edges of the patterned substrate, and a cleaning head positioned over the patterned substrate. The cleaning head includes a plurality of dispensing holes to dispense a cleaning material on the surface the patterned substrate for defining integrated circuit devices, wherein the cleaning material includes polymers of a polymeric compound. The cleaning head is coupled to a storage of the cleaning material, which is coupled to the cleaning material preparation system. A support structure holds the cleaning head in proximity to the surface of the patterned substrate.

Abstract: A cleaning material is applied to a surface of a substrate. The cleaning material includes one or more polymeric materials for entrapping contaminants present on the surface of the substrate. A rinsing fluid is applied to the surface of the substrate at a controlled velocity to effect removal of the cleaning material and contaminants entrapped within the cleaning material from the surface of the substrate. The controlled velocity of the rinsing fluid is set to cause the cleaning material to behave in an elastic manner when impacted by the rinsing fluid, thereby improving contaminant removal from the surface of the substrate.

Abstract: An assembly structured to clean the head portion of a stethoscope comprising a housing including a path of travel along which the head portion passes during cleaning. A supply of cleaning fluid associated with a dispenser assembly is cooperatively disposed relative to an activating assembly. The activating assembly is operated in moveable engagement with the head portion, and activates the dispenser assembly when engaged by the head portion as it passes along the path of travel. The dispenser assembly delivers the cleaning fluid to an applicator assembly which distributes the cleaning fluid to the head portion and facilitates the cleaning thereof and removal of excess cleaning fluid there from. At least one disinfectant agent is dispersed within or comprises a portion of the housing and is formulated to be destructively effective against pathogenic bacteria, such as in the spore form, which is generally not affected by the cleaning fluid.

Abstract: A method for cleaning a surface of a substrate having a circuit pattern formed thereon, includes: forming a liquid film on the surface by feeding a cleaning solution onto the center of the surface while rotating the substrate with the substrate kept horizontal; forming a dry region by discharging gas to the center while moving a position of feed of the cleaning solution on the surface by a distance from the center toward the periphery of the substrate with the substrate being rotated; moving the position of feed of the cleaning solution on the surface toward the periphery at a speed equal to a speed at which the dry region is expanded toward the periphery while rotating the substrate; and controlling temperature of the cleaning solution to form the liquid film such that the temperature becomes higher than process atmosphere temperature on the surface during feed of the cleaning solution.

Abstract: A method of manufacturing a semiconductor device in which an insulating film is filled between patterns etched into a workpiece structure is disclosed. The method includes cleaning etch residues residing between the etched patterns by a first chemical liquid; rinsing the workpiece structure cleaned by the first chemical liquid by a rinse liquid; and coating the workpiece structure rinsed by the rinse liquid with a coating liquid for formation of the insulating film. The cleaning to the coating are carried out within the same processing chamber such that a liquid constantly exists between the patterns of the workpiece structure.

Abstract: A turret-type cleaning apparatus for using cleaning liquids, and deburring and cleaning a workpiece includes: cleaning tools for spraying one of the liquids onto the workpiece and deburring and/or cleaning it; a turnable turret head where the tools are attached; a turret drive device connected to the head and for turning the head; a cleaning liquid source for supplying the liquids to first and second cleaning liquid supply flow passages; a first cleaning liquid supply flow passage configured to supply the one of the liquids to the cleaning tool; a second cleaning liquid supply flow passage for supplying the other of the liquids to the bath; a cleaning chamber where the head is arranged; a cleaning bath installed in the chamber; and a drain port openably and closably provided below the bath and for draining the liquids in the bath.

Abstract: A cleaning apparatus for cleaning a spray gun of the type having at least one paint inlet, and a fluid outlet, the cleaning apparatus has at least one support structure, a fluid feed head (3) carried by the structure (2), and removal elements for removing at least a fraction of the fluid coming from the fluid feed head (3), the fluid feed head having at least one feed nozzle (5) defining a duct serving to be connected to the paint inlet of the spray gun. The cleaning apparatus (1) has at least two independent fluid inlets (6, 7) for feeding fluid to the feed nozzle (5), each of the inlets having a distinct discharge (6A, 7A) into the duct of the feed nozzle, one of the inlets (6) being connectable to a cleaning fluid source, and the other (7) of the inlets being connectable to a compressed air source.

Abstract: A rinsing liquid (DIW) is discharged from a rinsing liquid discharge port formed in a blocking member to perform rinsing processing to a substrate surface while a nitrogen gas is supplied into a clearance space, and a liquid mixture (IPA+DIW) is discharged from a liquid mixture discharge port formed in the blocking member to replace the rinsing liquid adhering to the substrate surface with the liquid mixture while the nitrogen gas is supplied into the clearance space. Thus, an increase of the dissolved oxygen concentration of the liquid mixture can be suppressed upon replacing the rinsing liquid adhering to the substrate surface with the liquid mixture, which makes it possible to securely prevent from forming an oxide film or generating watermarks on the substrate surface.

Abstract: A flux cleaning apparatus for cleaning an object with flux by removing impurities that include flux from the object with flux includes a body, a mount, at least one steam spraying nozzle, and a steam supplying unit. The mount is coupled with the body for mounting the object with flux. The at least one steam spraying nozzle is coupled with the body for spraying steam toward the object with flux on the mount such that the object with flux is cleaned by the steam sprayed from the steam spraying nozzle. The steam supplying unit is coupled with the body and the steam supplying unit supplies steam to the at least one steam spraying nozzle.

Abstract: System for treating and/or processing liquid products, in particular beverages, having at least two system components, having a cleaning and rinsing system for cleaning and rinsing of at least product-carrying regions of the system components with at least one liquid cleaning and rinsing medium, and having at least one source for providing the cleaning and rinsing medium.

Abstract: A laparoscopic lens cleaner which is suitable for maintaining the lens of a laparoscope in a clean, dry condition during a laparoscopic surgical procedure is disclosed. An illustrative embodiment of the laparoscopic lens cleaner includes an elongated cleaner sheath having a sheath interior, a fluid conduit provided in the cleaner sheath, a fluid discharge nozzle provided in the sheath interior and communicating with the fluid conduit, a gas conduit provided in the cleaner sheath and a gas discharge nozzle provided in the sheath interior and communicating with the gas conduit.

Abstract: A fluid supply pipe is inserted through a motor supporting member, a spin motor, a rotating shaft, and a plate supporting member. A first flange is integrally formed in the vicinity of a curved portion of a straight portion, extending in the vertical direction, of the fluid supply pipe. The first flange is fixed to a motor supporting member. Thus, the fluid supply pipe is fixed to the spin motor through the motor supporting member. The fluid supply pipe has a configuration in which a gas supply pipe made of resin and a plurality of cleaning liquid supply pipes made of resin are accommodated inside a guide pipe made of stainless. Inside the guide pipe, the one gas supply pipe is surrounded by the plurality of cleaning liquid supply pipes.

Abstract: In particular a porous substrate (FS) like a fabric. Process to clean a substrate, comprising a step of subjecting the substrate to an air-water spray (SPR), generated using a spraying means (N) comprising an air passage (OPA) and a water passage (OPW), wherein air is greater than 90% by volume of the spray, the air velocity is greater than 80 m/s and wherein said air passage does not coaxially surround said water passage. Device to clean soiled fabric (FS) comprising a feed water container (CW) and an air compressor (AC) in fluid communication with a spray nozzle (N) comprising an air passage and a water passage, said device being capable of generating an air pressure in the range of 1 to 3 bar (absolute) and an air velocity greater than 80 m/s at the exit of said nozzle; and the air is greater than 90% volume of said spray, and wherein said air passage does not coaxially surround said water passage. An external mix spray nozzle is especially preferred in the device.

Abstract: A laparoscopic lens cleaner which is suitable for maintaining the lens of a laparoscope in a clean, dry condition during a laparoscopic surgical procedure is disclosed. An illustrative embodiment of the laparoscopic lens cleaner includes an elongated cleaner sheath having a sheath interior, a fluid conduit provided in the cleaner sheath, a fluid discharge nozzle provided in the sheath interior and communicating with the fluid conduit, a gas conduit provided in the cleaner sheath and a gas discharge nozzle provided in the sheath interior and communicating with the gas conduit.

Abstract: A wafer W is held in a horizontal attitude within an airtight container 41 by a vacuum chuck 42 such that small gaps are formed between the wafer W and the inner surfaces of the airtight container 41. A cleaning liquid is supplied toward the center portion of a front surface of the wafer W through a fluid supply port 40 which is an end of a fluid supply path 5, and is discharged through a fluid discharge portion 44 arranged in the bottom portion of the airtight container 41 in a form of a groove running along a circle having its center located on the center axis of the wafer W. The cleaning liquid flows and spreads from the center portion of the wafer W toward the peripheral portion while removing particles adhered to the wafer W, and is discharged through the fluid discharge portion 44. This arrangement allows the particles to be uniformly and reliably removed without rotating the wafer W. The entire cleaning apparatus 4 has a small size.

Abstract: A system and method for preventing a pattern formed on a substrate from collapsing during a rinsing and drying phase of a fabrication operation includes determining a plurality of process parameters associated with a rinsing chemistry used during the rinsing operation. The process parameters define the characteristics of the rinsing chemistry and a substrate surface layer. A chemistry to reduce the surface tension of the rinsing chemistry (surface tension reducer) with at least one low surfactant chemical is identified based on the process parameters of the rinsing chemistry. The surface tension reducer is applied to the surface of the substrate such that the low surfactant chemical reduces the surface tension of the rinsing chemistry applied to the surface of the substrate thereby preventing the pattern from collapsing.

Abstract: After a water film is formed on a wafer front surface in a chamber, the water film is supplied sequentially with an oxidizing component of an oxidation gas, an organic acid component of an organic acid mist, an HF component of an HF gas, the organic acid mist, and the oxidizing component of the oxidation gas. As a result, the HF component and the organic acid component provide cleaning effect on the wafer surface, and a concentration of the cleaning components in the water film within a wafer surface can be even.

Abstract: A system for automatically metering liquid or paste-like auxiliary washing agents stored in reservoirs for automatically controlled washing machines. It has a central fluid line disposed in a housing bottom and a plurality of nozzles disposed in the housing bottom on a circular line extending concentrically to the axis of a rotor. The nozzles can be connected individually to the outlet by a connecting line inside the motor-drivable rotor. In the connection to the connecting line, seals are provided. Due to a force continually axially acting on the rotor in the direction of the housing bottom, said rotor presses the seals until the contact surfaces of the rotor and the housing bottom substantially form a common plane.

Abstract: An etching/cleaning apparatus is provided, which makes it possible to effectively remove an unnecessary material or materials existing on a semiconductor wafer without damaging the device area with good controllability. The apparatus comprises (a) a rotating means for holding a semiconductor wafer and for rotating the wafer in a horizontal plane; the wafer having a device area and a surface peripheral area on its surface; the surface peripheral area being located outside the device area; and (b) an edge nozzle for emitting an etching/cleaning liquid toward a surface peripheral area of the wafer. The etching/cleaning liquid emitted from the edge nozzle selectively removes an unnecessary material existing in the surface peripheral area.

Abstract: An object of the present invention is to continuously feed an object to be treated to a high-pressure reactor which treats the object to be treated containing 10 mass % or more of water under high pressure, while preventing backflow of a high-pressure atmosphere from the high-pressure reactor. This is embodied by making a configuration such that the object to be treated is fed to the high-pressure reactor connected to a discharge port of a screw feeder which is provided with a feed unit for the object to be treated and the discharge port on one end side and the other end side respectively and forms a high-pressure atmosphere pressurized to, for example, 2 MPa or higher, while air-tightness between the high-pressure atmosphere and the one end side of the screw feeder is maintained by a sealing action of an accumulation compressed on the other end side of the screw feeder.

Abstract: The disclosure concerns a manufacturing method of a semiconductor device includes dry-etching a semiconductor substrate or a structure formed on the semiconductor substrate; supplying a solution onto the semiconductor substrate; measuring a specific resistance or a conductivity of the supplied solution; and supplying a removal solution for removing the etching residual material onto the semiconductor substrate for a predetermined period of time based on the specific resistance or the conductivity of the solution, when an etching residual material adhering to the semiconductor substrate or the structure is removed.

Abstract: Disclosed is a substrate processing apparatus, a substrate processing method and a computer-readable medium capable of recovering an extended amount of discharged solution from a processing unit thereby reducing the amount of deionized water for the processing and the cost. The substrate processing apparatus includes, inter alia, a first and second discharge solution lines each connected to a downstream side of a discharge unit, and the discharged solution from each of the first and second discharge solution lines is independently delivered to the processing solution supply unit as a recovered solution. Also, the substrate processing apparatus includes a converting unit that converts flow of the discharged solution from the discharge unit either to the first discharge solution line or to the second discharge solution line. The processing solution supply unit selectively delivers the recovered solution from the first and second discharge solution lines to the processing unit.

Abstract: In particular a porous substrate (FS) like a fabric. Process to clean a substrate, comprising a step of subjecting the substrate to an air-water spray (SPR), generated using a spraying means (N) comprising an air passage (OPA) and a water passage (OPW), wherein air is greater than 90% by volume of the spray, the air velocity is greater than 80 m/s and wherein said air passage does not coaxially surround said water passage. Device to clean soiled fabric (FS) comprising a feed water container (CW) and an air compressor (AC) in fluid communication with a spray nozzle (N) comprising an air passage and a water passage, said device being capable of generating an air pressure in the range of 1 to 3 bar (absolute) and an air velocity greater than 80 m/s at the exit of said nozzle; and the air is greater than 90% volume of said spray, and wherein said air passage does not coaxially surround said water passage. An external mix spray nozzle is especially preferred in the device.

Abstract: An apparatus for etching a substrate includes (a) a nozzle system including at least one nozzle through which acid solution containing at least hydrofluoric acid is sprayed onto the substrate, (b) a mover which moves at least one of the nozzle system and the substrate relative to the other in a predetermined direction in such a condition that the substrate and the nozzle system face each other, (c) a filter system which filters off particles out of the acid solution having been sprayed onto the substrate, and (d) a circulation system which circulates the acid solution having been sprayed onto the substrate, to the filter system, and further, to the nozzle system from the filter system.

Abstract: A developer nozzle is moved from a periphery of a wafer toward the central portion while an exposed substrate held at a spin chuck is being rotated about a vertical axis and while a developing solution is being discharged from the developer nozzle, and this way the developing solution is supplied to the surface of the wafer, the developer nozzle having a slit-like ejection port whose longitudinal direction is oriented to the direction perpendicular to the radial direction of the wafer. The movement speed of the nozzle is higher than a case where a nozzle with a small-diameter circular nozzle is used, and this enables a development time to be reduced. Further, the thickness of a developing solution on a substrate can be reduced, so that the developing solution can be saved.

Abstract: An ozone vegetable and fruit washing machine utilizes ozone water to wash the vegetables and fruits. A tub is provided in a casing. A water pump and an ozone generator module are sandwiched between the casing and the tub. The water pump is connected with nozzles toward the interior of the tub. The water in the tub is delivered to the nozzles and ejected by the nozzles. The ozone generated by the ozone generator module is delivered to the bottom inside the tub, and the ozone is solved in water to form ozone water. In addition, a washing vessel is further provided in the tub for accommodating the vegetables and fruits to be washed. The ozone water is pumped by the water pump for circulation use, and the ozone water is ejected by the nozzles, whereby the rolling vegetable and fruits driven by eddies can be washed completely.

Abstract: Disclosed is an apparatus for wet treatment of a disc-like article, which comprises: a spin chuck for holding and rotating the disc-like article, and an inner edge nozzle dispensing treatment liquid directed towards a first peripheral region of the first surface of the disc-like article, wherein the first surface is facing the spin chuck and the first peripheral region is defined as being a region of the first surface with an inner radius (ri), which is greater than 1 cm less than the disc-like article's radius (ra), wherein the inner edge nozzle is positioned in a stationary manner between the disc-like article (when placed on the spin chuck) and the spin chuck, wherein the inner edge nozzle is feed through a central pipe, which is disposed in a stationary manner and penetrates centrally through the spin chuck, for supplying a treatment liquid against a first surface of the disc-like article.

Abstract: A cleaning device is provided for cleaning a surface comprising a base unit having a rotating brush. The cleaning device is efficient, economic and environment friendly through recuperative use of a cleaning agent.

Abstract: A dishwasher includes a tub, a steam generator for generating steam, a water supply passage for supplying washing water to the steam generator, a release valve having a steam passage along which the steam generated by the steam generator is supplied to the tub, and a condensed water passage connected to the water supply passage to allow water condensed by the steam to fall to the water supply passage.

Abstract: An apparatus for removing a photoresist from a substrate which includes a stripping bath chamber, a conveying unit conveying a substrate containing a photoresist through the stripping bath chamber, a photoresist stripper material supplying unit positioned to dispense the photoresist stripper material to the substrate while the substrate is disposed in the stripping bath chamber, an antifoaming agent supplying unit disposed in the stripping bath chamber dispensing an antifoaming agent toward the photoresist stripper material in the stripping bath chamber, an antifoaming agent storing unit communicating with the antifoaming agent supplying unit supplying the antifoaming agent thereto, and a stripper storing unit operatively connected to the stripper supplying unit supplying stored photoresist stripper material thereto.

Abstract: A device for liquid treatment of a defined area of a wafer-shaped article, especially of a wafer, near the edge, in which the liquid is applied to a first surface, flows essentially radially to the outside to the peripheral-side edge of the wafer-shaped article and around this edge onto the second surface, the liquid wetting a defined section near the edge on the second surface and thereupon being removed from the wafer-shaped article.

Abstract: Disclosed are a substrate processing apparatus and a substrate cleaning method to satisfactorily clean the entire circumferential periphery of a substrate, including an upper surface circumferential periphery, an end, and a lower surface circumferential periphery of the substrate. The substrate processing apparatus includes a substrate supporter to support the substrate, a first cleaner to clean the upper surface circumferential periphery of the substrate with a pressurized cleaning liquid, and a second cleaner to clean the end and the lower surface circumferential periphery of the substrate while contacting the end and the lower surface circumferential periphery of the substrate with a cleaning member. The first cleaner cleans the upper surface circumferential periphery of the substrate, and the second cleaner cleans the end and the lower surface circumferential periphery of the substrate.

Abstract: The present invention provides a system (100) for conditioning multi-component slurries utilized in chemical mechanical polishing (CMP) of semiconductor wafers (140). The system provides a first slurry component (108), and a second slurry component (120). A conditioning component (102) has first and second inlets, and an outlet operatively coupled to a dispensing system (138). First and second flow control components (116, 126) are operably intercoupled between the first and second inlets and the first and second slurry components, respectively. The system further provides a megasonic energy source (106), adapted to generate an energy field (118) across the conditioning component. A conveyance component (114) conducts the slurry components from the inlets through the energy field, and delivers a final mixture (136) of multi-component slurry to the outlet.

Abstract: A combination of a reusable fluid filter and a cleaning/regeneration apparatus that cleans a used filter and returns it to like-new condition for reuse. The filter comprises a container and a filter medium, the latter of which is a combination of coarse and fine wire mesh layers. The wire mesh may be cleaned and returned to usable condition using the regeneration station. The regeneration station comprises a reservoir having a cleaning medium, a filter mount, a compressed gas inlet, and a circulating pump supplying cleaning medium to the filter to be cleaned.

Abstract: A method is provided for reducing the amount of film fragments discharged into a processing liquid circulation system during removal of films from wafers, thereby reducing the frequency of filter cleaning or filter replacement. The method includes exposing a wafer containing a film formed thereon in a process chamber of a substrate processing system to a processing liquid, where the wafer is not rotated or is rotated at a first speed and the processing liquid is discharged from the process chamber to a processing liquid circulation system. Subsequently, exposure of the wafer to the processing liquid is discontinued and the wafer is rotated at a second speed greater than the first speed to centrifugally remove fragments of the film from the wafer. Next, the wafer is exposed to the same or a different processing liquid and the processing liquid is discharged from the process chamber to a processing liquid drain.

Abstract: The treatment device 100 of the present invention is a treatment device for carrying out treatment to a treatment object 18 whose treatment surface includes a second treatment surface 18b and a first treatment surface 18a surrounding the second treatment surface 18b, the treatment device including: a table section 10 for placing the treatment object 18 thereon; and a first feeding section 24 for feeding a first treatment liquid to an approximate boundary between the first and the second treatment surfaces 18a, 18b and a second feeding section 46 for feeding a second treatment liquid to the second treatment surface 18b. Thus, the present invention provides a treatment device, a treatment method, and a surface treatment jig, each of the treatment device and the treatment method being capable of carrying out independent treatments to a treatment surface and an exposed surface surrounding the treatment surface, respectively.

Abstract: A substrate processing apparatus includes a bath in which a liquid or a gas is fed, and a mechanism which feeds out a liquid or a gas into the bath. The substrate processing apparatus processes a to-be-processed substrate which is disposed in the bath. The mechanism includes a first feed-out device and a second feed-out device configured to feed out the liquid or gas into the bath, the first feed-in device configured to start/stop the feed-out of the liquid or gas from the first feed-out device, and second feed-in device configured to start/stop the feed-out of the liquid or gas from the second feed-out device.

Abstract: An apparatus for cleaning a substrate is disclosed. The apparatus having a first head unit and a second head unit. The first head unit is positioned proximate to the surface of the substrate and has a first row of channels defined within configured to supply a foam to the surface of the substrate. The second head unit is positioned substantially adjacent to the first head unit and proximate to the surface of the substrate. A second and a third row of channels are defined within the second head unit. The second row of channels is configured to supply a fluid to the surface of the substrate. The third row of channels is configured to apply a vacuum to the surface of the substrate.

Abstract: A rinse system including providing a chemical rinse including a corrosion inhibitor, and rinsing a wafer with the chemical rinse reducing defects on silicon and a dielectric, and maintaining integrity of a metal.

Abstract: A cleaning method highly effectively cleans a surface of a semiconductor wafer by removing a dissolution product, produced when a surface of a semiconductor wafer is processed by a developing process that develops an exposed film formed on the semiconductor wafer by wetting the exposed film with a developer, from the surface of the semiconductor wafer. A cleaning liquid is poured through a cleaning liquid pouring nozzle onto a central part of a rotating wafer processed by a developing process to spread the cleaning liquid in a film over the surface of the wafer. Then, the cleaning liquid pouring nozzle is shifted to create a dry area in a central part of the wafer and the wafer is rotated at 1500 rpm to expand the dry area.

Abstract: In a method of removing a film residue from a wafer in a substrate processing system, a surface of the wafer is exposed to a processing liquid to thereby lift a first portion of the film residue off the surface of the wafer. In addition, a continuous or pulsed stream of pressurized gas is applied against the surface of the wafer to remove a second portion of the film residue from the wafer. The method may include rotating the wafer relative to the stream of pressurized gas. The stream of pressurized gas may be applied subsequent to exposing the surface of the wafer to the processing liquid and any residual processing liquid may be removed with the second portion of film residue by the stream of pressurized gas. Alternatively, the stream of pressurized gas may be applied concurrently with the processing liquid to remove the film residue and processing liquid in a single step.

Abstract: An apparatus for foam-assisted cleaning comprising a closable container with a funnel-shaped working chamber formed between the surface of the semiconductor wafer and the tapered base plate. The apparatus is provided with a fluid supply unit that incorporates a foam generator in the form of conical body with a flat surface on a wider end face of the conical body. This flat surface functions as a deflector for jets of neutral gas ejected onto the deflector and reflected therefrom into the interior of the fluid supply body filled with a foamable liquid. The jets of neutral gas create a zone of reduced pressure that generates gas bubbles which form the foam. The latter is displaced from the foam generator into the working chamber through a Bernoulli nozzle formed by the tip of the conical body and the outlet opening of the foam generator. The foam is formed from de-ionized water, isopropyl alcohol, and, if necessary, a surfactant.

Abstract: A method and system for cleaning a surface of a substrate after an etching operation includes determining a plurality of process parameters associated with the surface of the substrate. The process parameters define characteristics related to the surface of the substrate such as characteristics of the substrate surface to be cleaned, contaminants to be removed, features formed on the substrate and chemicals used in the fabrication operations. A plurality of application chemistries are identified based on the process parameters. The plurality of application chemistries includes a first application chemistry as an emulsion having a first immiscible liquid combined with a second immiscible liquid and solid particles distributed within the first immiscible liquid.

Abstract: A method for cleaning an edge surface of a semiconductor substrate is disclosed. The proximity head unit is positioned so that the flow head portion and the collection head portion of the proximity head unit are proximate to the edge surface of the semiconductor substrate. The semiconductor substrate is then rotated using one or more powered rollers. During the rotation of the semiconductor substrate, the flow head portion applies a fluid to the edge surface while the collection head portion collects fluid from the edge surface. Additional methods, an apparatuses, and a system for cleaning an edge surface of a semiconductor substrate are also described.

Abstract: A method for removing post-processing residues in a single wafer cleaning system is provided. The method initiates with providing a first heated fluid to a proximity head disposed over a substrate. Then, a meniscus of the first fluid is generated between a surface of the substrate and an opposing surface of the proximity head. The substrate is linearly moved under the proximity head. A single wafer cleaning system is also provided.