Abstract: An apparatus and method are disclosed in which a semiconductor substrate having a surface containing contaminants is cleaned or otherwise subjected to chemical treatment using a foam. The semiconductor wafer is supported either on a stiff support (or a layer of foam) and foam is provided on the opposite surface of the semiconductor wafer while the semiconductor wafer is supported. The foam contacting the semiconductor wafer is pressurized using a form to produce a jammed foam. Relative movement between the form and the semiconductor wafer, such as oscillation parallel and/or perpendicular to the top surface of the semiconductor wafer, is then induced while the jammed foam is in contact with the semiconductor wafer to remove the undesired contaminants and/or otherwise chemically treat the surface of the semiconductor wafer using the foam.

Abstract: The present inventive concept provides a substrate treating apparatus and an exposing apparatus that a chuck member, a chuck cleaning member including a cleaning tool removing a foreign substance on a substrate loading surface of the chuck member and a tool cleaning member cleaning a cleaning tool are disposed to be adjacent to each other inside a treating room. The present inventive concept also provides a method of cleaning a cleaning tool using a tool cleaning member. According to the above the apparatuses and the method, contamination of a chuck member by a cleaning tool is prevented and a defocus phenomenon caused by a particle on a chuck member during an exposing process can be minimized.

Abstract: A fluid supply pipe is inserted through a motor supporting member, a spin motor, a rotating shaft, and a plate supporting member. A first flange is integrally formed in the vicinity of a curved portion of a straight portion, extending in the vertical direction, of the fluid supply pipe. The first flange is fixed to a motor supporting member. Thus, the fluid supply pipe is fixed to the spin motor through the motor supporting member. The fluid supply pipe has a configuration in which a gas supply pipe made of resin and a plurality of cleaning liquid supply pipes made of resin are accommodated inside a guide pipe made of stainless. Inside the guide pipe, the one gas supply pipe is surrounded by the plurality of cleaning liquid supply pipes.

Abstract: The embodiments of the present invention provide apparatus for cleaning patterned substrates with fine features with cleaning materials. The apparatus using the cleaning materials has advantages in cleaning patterned substrates with fine features without substantially damaging the features. The cleaning materials are fluid, either in liquid phase, or in liquid/gas phase, and deform around device features; therefore, the cleaning materials do not substantially damage the device features or reduce damage all together. The cleaning materials containing polymers of a polymeric compound with large molecular weight capture the contaminants on the substrate. In addition, the cleaning materials entrap the contaminants and do not return the contaminants to the substrate surface. The polymers of one or more polymeric compounds with large molecular weight form long polymer chains, which can also be cross-linked to form a network (or polymeric network).

Abstract: A proximity head including a head surface. The head surface including a first flat region and a plurality of first conduits. Each one of the plurality of first conduits being defined by corresponding one of a plurality of first discrete holes. The plurality of first discrete holes residing in the head surface and extending through the first flat region. The head surface also including a second flat region and a plurality of second conduits. The plurality of second conduits being defined by a corresponding plurality of second discrete holes that reside in the head surface and extend through the second flat region. The head surface also including a third flat region disposed between and adjacent to the first flat region and the second flat region and a plurality of third conduits. The plurality of third conduits being defined by a corresponding plurality of third discrete holes that reside in the head surface and extend through the third flat region.

Abstract: A vehicle mounted patching system for patching potholes and the like and incorporating method and apparatus for removing and flushing asphalt emulsion from the feed lines of the patcher which completely recycles the cleaning agent used to flush the feed lines, as well as eliminating any external discharge of potentially toxic materials.

Abstract: An apparatus and method are provided to treat for example a semiconductor wafer substrate wherein a delivery means for heat, a cryogen, and a fluid chemical reactant, is disposed in a chamber in which the substrate is disposed for at least one surface of the substrate to be cleaned in the chamber. The chamber may also consist of a plurality of stations for chemically treating, providing cryogen to the substrate to effect such cleaning and heating. Air is provided in the chamber in a laminar flow substantially parallel to the surface being treated to remove displaced material from the surface and prevent redeposition of the material on the substrate surface.

Abstract: A substrate treating apparatus includes an injecting nozzle which injects a treating solution to dry a substrate. The injecting nozzle discharges the treating solution to the substrate and injects a treating gas to the treating solution discharged from the injecting nozzle by controlling a stream of the treating gas. Thus, since the substrate treating apparatus can minimize a size of a minor particle of the treating solution, a cleaning efficiency and a yield of a product may be improved.

Abstract: A method and apparatus for removing a first liquid from a surface of a substrate is provided. A second liquid is supplied to at least part of a surface of a substrate having a rotary movement. The rotary movement has a center of rotation and an edge of rotation. The second liquid is directed from the center of rotation to the edge of rotation using a nozzle. A dry zone is created on the substrate as the position of the spray moves from the center of rotation to the edge of rotation. As a result, the first liquid and the second liquid are removed from the surface of the substrate.

Abstract: A method for processing a substrate is provided which includes applying fluid onto a surface of the substrate from a portion of a plurality of inlets and removing at least the fluid from the surface of the substrate where the removing being processed as the fluid is applied to the surface. The applying the fluid and the removing the fluid forms a segment of a fluid meniscus on the surface of the substrate.

Abstract: An apparatus and method for removing contaminants from a workpiece is described. Embodiments of the invention describe placing a workpiece on a holding bracket within a process chamber to hold and rotate the workpiece to be cleaned. A first cleaning fluid is provided to the workpiece non-device side, while a degasified liquid is provided to the workpiece device side during megasonic cleaning. The degasified liquid inhibits cavitation from occurring on and damaging the device side of the workpiece during megasonic cleaning.

Abstract: [Object] It is an object of the invention to provide a cleaning apparatus for cleaning a precision substrate capable of preventing a contamination factor from adhering again, to prevent a natural oxide film from being formed, and to prevent a water mark.

Abstract: A method of removing a deposition from an optical element of an apparatus. The method includes providing a hydrogen comprising gas in at least a part of the apparatus, providing nitrogen radicals in the part of the apparatus for generating hydrogen radicals from the hydrogen comprising gas, and contacting the optical element with at least part of the hydrogen radicals to removal the deposition.

Abstract: A dishwasher has multiple wash zones which are each supplied by a wash liquid supply. An interior tub configured to provide an interior wash chamber for washing dishes is divisible into three wash zones supplied by first, second, and third wash liquid supplies. The third wash zone is supplied by a wash liquid supply that is controllable independently of the other two wash liquid supplies. The third wash liquid supply can be controlled to supply wash liquid to a detergent dispenser or a wall-mounted spray manifold, or shut off separately from the first and second wash liquid supplies.

Abstract: A substrate preparation apparatus is provided. The apparatus includes a housing configured to be installed in a substrate fabrication facility. The housing includes a manifold for use in preparing a wafer surface. The manifold is configured to include a first process window in a first portion of the manifold. A first fluid meniscus is capable of being defined within the first process windowl. Further included is a second process window in a second portion of the manifold. A second fluid meniscus is capable of being defined within the second process window. An arm is integrated with the housing, and the arm is coupled to the manifold, such that the arm is capable of positioning the manifold in proximity with the substrate during operation. The apparatus therefore provides for the formation of multi-menisci over the surface of a substrate using a single manifold.

Abstract: This invention relates to a mask cleaning apparatus 101 and a method of cleaning a mask substrate 110. An embodiment according to the invention is a mask cleaning apparatus 101 with a trap comprising a cold trap 120. An additional heater 130 performs the heating function. The mask cleaning apparatus 101 further comprises a support means 105, an aerosol nozzle 150 for blowing aerosol 155 towards the mask substrate 110. In a first stage of the cleaning process the mask substrate 110 is close to the heater 130, and the mask substrate 110 is heated. In a second stage of the cleaning process, the gas flow 170 is stopped, and the mask 110 is transported close to the cold trap 120. The cold trap 120 is cooled. In a third stage of the cleaning process, the aerosol nozzle 150 blows aerosol 155 towards the mask substrate 110, which detaches particles from the mask substrate 110. This embodiment uses thermophoretic forces for trapping detached particles.

Abstract: A chemical supply system comprises, as principal elements, a chemical storage tank in which a liquid chemical for cleaning is stored in the state of its formulated concentrate, a chemical supply apparatus connected to the chemical storage tank for positively performing chemical supply, a piping system connected to the chemical supply apparatus to form a supply flow passage that is a passage for ultrapure water which the liquid chemical is to be mixed with, a pair of discharge nozzles disposed at end portions of the piping system so as to oppose surfaces of a wafer set in a cleaning chamber to supply a cleaning liquid onto the surfaces. Thereby, remarkable miniaturization/simplification of a cleaning liquid supply system including chemical tanks is intended, it is made possible easily and rapidly to compound and supply a cleaning liquid at an accurate chemical concentration, and particles or the like being generated and mixing in a cleaning liquid, are suppressed to the extremity.

Abstract: A cleaning machine is provided, in particular a single-chamber dishwashing machine, that includes a washing chamber for accommodating items to be cleaned or washed. At least one wash arm with a number of spray nozzles is located in the washing chamber. A waste-water line into which waste water is pumped runs from the washing chamber. Exhaust air from the washing chamber is conducted into the waste-water line via an exhaust-air line, with the washing chamber being bounded by at least one wall which stores a heat-exchanger fluid or through which heat-exchanger fluid flows.

Abstract: An etching gas control system is provided. The system includes a gas injector, a gas supply pipe, a Flow Ratio Controller (FRC), and a gas supply unit. The gas injector is installed in a chamber and supplies gas inside the chamber. The gas injector includes a top injector installed at a top of the chamber and a side injector installed at a side of the chamber. The gas supply pipe connects and supplies gas to the gas injector. The FRC connects to the gas supply pipe and controls supply of gas. The gas supply unit supplies gas to the FRC.

Abstract: Systems and methods for cleaning particulate contaminants adhered to wafer surfaces are provided. A cleaning media including dispersed coupling elements suspended within the cleaning media is applied over a wafer surface. External energy is applied to the cleaning media to generate periodic shear stresses within the media. The periodic shear stresses impart momentum and/or drag forces on the coupling elements causing the coupling elements to interact with the particulate contaminants to remove the particulate contaminants from the wafer surfaces.

Abstract: A spray fill device for delivering water to a washing machine is provided. The spray fill device includes a body defining an inlet, an outlet port, a mounting port, and a plurality of outlet apertures in flow communication with the inlet. The spray fill device also includes a first valve coupled to the inlet, the valve configured to control a flow rate of water into the inlet. The spray fill device also includes a pressure relief mechanism coupled to the mounting port, the pressure relief mechanism inhibiting flow through the outlet port when a pressure within the body is less than a predetermined pressure.

Abstract: A device for cleaning and doping (lubrication) equipment for threads (3b, 4b) of the type used to join pipes (4) to a pipe string (3), especially in connection with petroleum production, where cleaning fluid and dope (lubricant) are sprayed at the threads (3b, 4b) at relatively high pressure from at least one nozzle (5, 6) mounted in the rotatable make-up section (1) of a power tong, and where at least one injection pump (7, 8) arranged to supply cleaning fluid or dope to the at least one nozzle (5, 6) is located in the rotatable make-up section (1).

Abstract: A packaged cleaning composition and process for cleaning a surface involves the simultaneous application of two liquids to the surface, such that a self-supporting gel is formed, acting on soil while delaying it from drying out. The gel and entrained soil are subsequently removed.

Abstract: An ultrasonic shower cleaning apparatus is disclosed which is capable of efficiently cleaning both surfaces of an article and configured to have a reduced size enabling an installation space thereof to be decreased. A pair of ultrasonic shower cleaning mechanisms each include a nozzle, a disc-shaped ultrasonic transducer arranged so as to face a backward end of the nozzle and an inlet port for a cleaning liquid formed opposite to a side surface of the nozzle. The ultrasonic shower cleaning mechanisms are integrally incorporated in one casing in such a manner that axes of the nozzles cross each other at a predetermined angle. The casing is provided with one inlet branch port connected to the inlet ports of the ultrasonic shower cleaning mechanisms. The casing may have a groove formed therein in which an edge of the article arranged between the two nozzles can be inserted.

Abstract: A soft spray nozzle discharging a cleaning mist is vertically directed and fixed to an arm. A rinse nozzle discharging rinsing deionized water for suppressing obstruction is vertically fixed to the arm at a prescribed distance from the soft spray nozzle. During cleaning, it follows that both nozzles discharge detergents while keeping relative layout relation. Therefore, the discharged cleaning mist and rinsing deionized water do not interfere with each other before reaching the substrate but the used detergents are entirely horizontally splashed and recovered in a cup. Thus, the cleaning mist is prevented from scattering and adhering to the periphery.

Abstract: Unwanted films can be eliminated by directing a stream of reactive gas(es) at reactive zone in an edge region of the wafer. The action of the reactive gas can be enhanced by heating the gas in a nozzle, immediately prior to the gas impinging on the wafer. The action of the reactive gas can also be enhanced by ultraviolet (UV) or infrared (IR) radiation directed at the reactive zone. The wafer is rotates so that the reactive zone traverses the entire edge region. Multiple gas/light delivery systems can cause gas and light to impinge on multiple reactive zones, both on the front side and on the back side of the wafer.

Abstract: An apparatus for generating a fluid meniscus to process a substrate is provided. The apparatus includes a manifold head with a manifold surface having a plurality of conduits configured to generate a fluid meniscus on a substrate surface when positioned proximate the substrate. The manifold head has a plurality of passages capable of communicating fluids with the plurality of conduits. The apparatus also includes an interface membrane attached to a portion of the manifold head. The interface membrane is configured to block a portion of the plurality of conduits during operation.

Abstract: A fluid dispenser for use in the processing of substrates. The dispenser has a dome shaped body with a convex upper surface and has a number of conduits designed to supply fluid to the surface of a substrate at predetermined points.

Abstract: Inventive methods and systems of cleaning patterned integrated circuit (“IC”) substrates are described. The cleaning methods of the present invention include: (1) providing the patterned integrated circuit substrate having thereon poly silicon lines adjacent to each other; (2) charging a solution, which contains at least a solute selected to promote cleaning of the patterned integrated circuit substrate, to produce a charged solution, wherein at least a portion of the solute is present as clusters in the charged solution; and (3) conveying the charged solution for cleaning the patterned integrated circuit substrate.

Abstract: Among the many embodiment, in one embodiment, a method for processing a substrate is disclosed which includes generating a fluid layer on a surface of the substrate, the fluid layer defining a fluid meniscus. The generating includes moving a head in proximity to the surface, applying a fluid from the head to the surface while the head is in proximity to the surface of the substrate to define the fluid layer, and removing the fluid from the surface through the proximity head by a vacuum. The fluid travels along the fluid layer between the head and the substrate at a velocity that increases as the head is in closer proximity to the surface.

Abstract: In one embodiment, a substrate preparation system is provided. The system includes a brush, a front head, and a back head. The brush is configured to brush scrub a back surface of a substrate using a brush scrubbing chemistry. The front head is defined in close proximity to a front surface of the substrate while the back head is defined in close proximity to the back surface of the substrate. The back head is positioned substantially opposite to the front head. The front head and the back head are applied as a pair to the substrate when the brush is apart from the substrate.

Abstract: A method for processing a substrate is provided which includes generating a meniscus on the surface of the substrate and applying photolithography light through the meniscus to enable photolithography processing of a surface of the substrate.

Abstract: A system and apparatus for cleaning a substrate is provided. The system includes a first head configured as a bar shape that extends approximately a diameter of the substrate. The first head is configured for placement on a first side of the substrate. A second head is also provided, and is configured as a bar shape that extends approximately the diameter of the wafer, and the second head is configured for placement on a second side of the substrate, such that the second side is opposite the first side. In this example, each of the first head and the second head have conduits formed therein along the diameter of the substrate for delivering and removing fluids so that a meniscus is capable of being contained between each of the first head and a substrate surface of the first side of the substrate and the second head and a substrate surface of the second side of the substrate.

Abstract: A soft spray nozzle discharging a cleaning mist is vertically directed and fixed to an arm. A rinse nozzle discharging rinsing deionized water for suppressing obstruction is vertically fixed to the arm at a prescribed distance from the soft spray nozzle. During cleaning, it follows that both nozzles discharge detergents while keeping relative layout relation. Therefore, the discharged cleaning mist and rinsing deionized water do not interfere with each other before reaching the substrate but the used detergents are entirely horizontally splashed and recovered in a cup. Thus, the cleaning mist is prevented from scattering and adhering to the periphery.

Abstract: A cleaning device with a toggle serves for increasing ozone dissolution in water for cleaning vegetables and fruits. The cleaning device is placed in a washing barrel. The cleaning device comprises a toggle being a circular body which is installed with at least one water circulation hole; and an air-stone disk formed by a bottom disk and a plurality of air stones; a lateral side of the bottom disk being connected to an air inlet tube for inputting air into the air-stone disk for diffusing airs. An upper periphery of the bottom disk is installed with a combining recess for combing the toggle. The washing barrel is a hollow barrel for receiving washing barrel therein; and a top of the washing barrel is installed with a cover.

Abstract: A cleaning processing apparatus comprises a spin chuck for holding a wafer W, an under plate being positioned to face the back surface of the wafer W with a prescribed gap provided therebetween, a support member for supporting the under plate, and a nozzle hole formed to extended through the plate member and the support member. A chemical liquid, a pure water and a gas can be supplied into a nozzle hole through opening-closing valves, and the chemical liquid and the pure water remaining inside the nozzle hole can be sucked by a sucking device. A pure water remaining inside the nozzle hole is sucked and removed by using the sucking device after the processing of the wafer W with a pure water and, then, a gas is spurted onto the back surface of the wafer W.

Abstract: A device for liquid treatment of a defined area of a wafer-shaped article, especially of a wafer, near the edge, in which the liquid is applied to a first surface, flows essentially radially to the outside to the peripheral-side edge of the wafer-shaped article and around this edge onto the second surface, the liquid wetting a defined section near the edge on the second surface and thereupon being removed from the wafer-shaped article.

Abstract: A method for processing a substrate is provided that includes generating a fluid meniscus on a surface of the substrate and applying acoustic energy to the fluid meniscus. The method also includes moving the fluid meniscus over the surface the substrate to process the surface of the substrate.

Abstract: A system and method for processing a wafer includes applying a process to the wafer. The process being supported by a surface tension gradient device. A result of the process is monitored. The monitored result is output.

Abstract: One of many embodiments of a substrate preparation system is provided which includes a drying system, the drying system including at least one proximity head for drying a substrate. The system also includes a cleaning system for cleaning the substrate.

Abstract: One of many embodiments of a substrate preparation system is provided which includes a head having a head surface where the head surface is proximate to a surface of the substrate. The system also includes a first conduit for delivering a first fluid to the surface of the substrate through the head, and a second conduit for delivering a second fluid to the surface of the substrate through the head, where the second fluid is different than the first fluid. The system also includes a third conduit for removing each of the first fluid and the second fluid from the surface of the substrate where the first conduit, the second conduit and the third conduit act substantially simultaneously.

Abstract: A process for efficiently preparing fine zeolite particles comprising synthesizing zeolite in the presence of an alkaline earth metal-containing compound and/or with controlling the preparation process of zeolite, thereby giving fine zeolite particles being composed of crystalline aluminosilicate, the fine zeolite particles having a fine average primary particle size, being excellent in the cationic exchange properties and the oil-absorbing ability, having a fine average aggregate particle size, and being excellent in the dispersibility; fine zeolite particles obtainable by the above process; and a detergent composition comprising the fine zeolite particles, the detergent composition being excellent in the detergency.

Abstract: A high pressure water stream (14) is discharged onto a surface to be cleaned. An ozone/water stream (16) is discharged on the same surface for sanitizing the surface. The high pressure water and ozone/water streams (14, 16) are discharged simultaneously along closely adjacent paths that are either parallel (FIG. 3) or concentric (FIG. 2). The water pressure is at least about 100 p.s.i. and is preferably between 100 p.s.i. and 1000 p.s.i. The nozzles that discharge the streams (14, 16) may be movable relative to the object(s) that receives the high pressure water and ozone/water (FIG. 1) Or, they may be fixed and the object may be movable relative to them (FIG. 4).

Abstract: A device for liquid treatment of a defined area of a wafer-shaped article, especially of a wafer, in which a mask is kept at a defined short distance to the wafer-shaped article such that liquid can be retained between the mask and the defined area of the wafer-shaped article by capillary forces.

Abstract: An apparatus and a method is provided for decoupling a cavitation in a liquid from an acoustic energy used to induce the cavitation. Broadly speaking, a pressure adjustment is used to control an acoustically induced cavitation in a liquid contained within a wafer cleaning apparatus, wherein the cavitation is defined by an amount and a size of gas bubbles. An increase in a pressure within the wafer cleaning apparatus results in a suppression of the cavitation. Conversely, a decrease in the pressure within the wafer cleaning apparatus results in an enhancement of the cavitation. Thus, independent control of the cavitation is provided without regard to the acoustic energy or a chemistry of the liquid. Controlling the cavitation allows for a safe and efficient wafer cleaning operation that can be customized to address specific requirements dictated by a particular wafer configuration.

Abstract: The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel. In an embodiment of the present invention, a semiconductor structure is placed into a first treatment vessel and chemically treated. Following the chemical treatment, the semiconductor structure is transferred directly to a second treatment vessel where it is rinsed with DI water and then dried. The second treatment vessel is flooded with both DI water and a gas that is inert to the ambient, such as nitrogen, to form a DI water bath upon which an inert atmosphere is maintained during rinsing. Next, an inert gas carrier laden with IPA vapor is fed into the second treatment vessel. After sufficient time, a layer of IPA has formed upon the surface of the DI water bath to form an IPA-DI water interface.

Abstract: A high pressure water stream(14) is discharged onto a surface to be cleaned. An ozone/water stream(16) is discharged on the same surface for sanitizing the surface. The high pressure water and ozone/water streams(14,16) are discharged simultaneously along closely adjacent paths that are either parallel (FIG. 3) or concentric (FIG. 2). The water pressure is at least about 100 p.s.i. and is preferably between 100 p.s.i. and 2000 p.s.i. The nozzles that discharge the streams (14,16) maybe movable relative to the object(s) that receives the high pressure water and ozone/water (FIG. 1). Or, they may be fixed and the object may be movable relative to them (FIG. 4).

Abstract: A method for processing a substrate is provided which includes generating a fluid meniscus on the surface of the vertically oriented substrate, and moving the fluid meniscus over the surface of the vertically oriented substrate to process the surface of the substrate.

Abstract: A device for liquid treatment of a defined area of a wafer-shaped article, especially of a wafer, near the edge, in which the liquid is applied to a first surface, flows essentially radially to the outside to the peripheral-side edge of the wafer-shaped article and around this edge onto the second surface, the liquid wetting a defined section near the edge on the second surface and thereupon being removed from the wafer-shaped article.

Abstract: Methods and systems for preparing a substrate implementing a surface tension reducing process are provided. In one example, a substrate preparation system includes a chuck which fingers for edge gripping the substrate. The chuck is hollow to provide simultaneous access to both active and backside surfaces of the substrate, and is configured to rotate the substrate. The system includes dispense arms positioned over the substrate surfaces. The dispense arms are capable of moving between a center region and a periphery of the substrate surfaces, and each dispense arm includes a pair of supply lines for delivering fluids over the substrate surfaces. A connection couples the upper dispense arm with the lower dispense arm so that the dispense arms synchronously move between the center region and the periphery of the substrate, and remain aligned on opposite surfaces of the substrate.