Abstract: An etching/cleaning apparatus is provided, which makes it possible to effectively remove an unnecessary material or materials existing on a semiconductor wafer without damaging the device area with good controllability. The apparatus comprises (a) a rotating means for holding a semiconductor wafer and for rotating the wafer in a horizontal plane; the wafer having a device area and a surface peripheral area on its surface; the surface peripheral area being located outside the device area; and (b) an edge nozzle for emitting an etching/cleaning liquid toward a surface peripheral area of the wafer. The etching/cleaning liquid emitted from the edge nozzle selectively removes an unnecessary material existing in the surface peripheral area.

Abstract: A substrate cleaning apparatus is provided that includes a cleaning cup for receiving a to-be-cleaned substrate, a table in the cleaning cup, a first, second, and third nozzles, a pure water heating mechanism configured to supply hot pure water, a branch line, a control mechanism, and an open/close valve, provided between the branch line and the pipe, wherein the open/close valve is configured to interrupt emission of hot water from the third nozzle by opening the open/close valve to lower the pressure in the pipe.

Abstract: The present invention is related to a method and apparatus for liquid treating and drying a substrate, such as a semiconductor wafer, the method comprising the step of immersing a substrate or a batch of substrates in a tank filled with a liquid, and removing the substrate(s) through an opening so that a flow of the liquid takes place through the opening during removal of the substrate. Simultaneously with the removal, a reduction of the surface tension of the liquid is caused to take place near the intersection line between the liquid and the substrate. For acquiring such a tensio-active effect, a uniform flow of a gas or vapor is used, or/and a local application of heat. The invention is equally related to an apparatus for performing the method of the invention.

Abstract: The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a gas-liquid mixture by mixing a liquid and a pressurized gas, to discharge the gas-liquid mixture to a substrate at high speeds. The mixture process is conducted in an open space out of the nozzle, and change in the supply pressure of the gas does not affect the supply of the liquid. The reaction products which having been generated on the substrate in etching process is removed at high speeds with the flow of the gas-liquid mixture, whereby the quality of the process is improved.

Abstract: Where a substrate such as a semiconductor wafer held in a process space in a process chamber consisting of an outside chamber and an inside chamber is subjected to a cleaning processing, a chemical agent such as IPA or a solvent having a surfactant added thereto is supplied in the form of a mist or a vapor toward the substrate under the sate that the substrate is stopped or rotated at a low speed after processing with a chemical agent and a subsequent rinsing processing with a pure water. After the supply of the chemical agent is stopped, the substrate is rotated at a rotating speed higher than said low speed so as to centrifugally remove the chemical agent attached to the substrate.

Abstract: A method and apparatus for dispensing a liquid on the surface of a localized zone of a substrate, for example for cleaning of etching purposes. Along with the liquid, a gaseous tensio-active substance is supplied, which is miscible with said liquid and when mixed with the liquid, reduces the surface tension of said liquid, thus containing the liquid in a local zone of the substrate surface.

Abstract: The present invention relates to a solution treatment unit for supplying a treatment solution to a substrate to treat the substrate within a treatment container, and an inner container surrounding an outer periphery of the horizontally held substrate with its upper and lower faces open is provided in the treatment container. An exhaust pipe for exhausting an atmosphere in the treatment container is provided in a bottom portion of the treatment container and inside the inner container. An exhaust port of the exhaust pipe is open at a position higher than the bottom portion. A drain port for draining the treatment solution in the treatment container is provided in the bottom portion. According to the present invention, the drain of a solution and the exhaust of an atmosphere can be performed separately without being mixed, and hence pressure loss of a fan on the factory side which performs an exhaust operation can be reduced, resulting in a reduction in excess power consumption.

Abstract: The present invention provides a system (200, 300) for remediating aberrations along the perimeter of a semiconductor wafer (202). The system includes a cleaning apparatus (204) within which the wafer is spun within a confined area. A chuck (208) defines the confined area, having a sidewall that extends above the upper surface (214) of the wafer and surrounds the perimeter of the wafer. The chuck also has a bottom wall, with an aperture formed therein, beneath the wafer. The system includes an isolation barrier (220), disposed atop the bottom wall of the chuck and around the aperture, in proximity to the lower surface so of the wafer. This forms a narrow gap (226) between the barrier and the wafer. A pressurized source forcefully directs a gas (218) at and along the lower surface of the wafer. The system also includes a remediation solution (228) that is applied to the upper surface of the wafer.

Abstract: A decontamination system for victims of chemical, biological, radiological, or other harmful exposure. The system effectively isolates a contaminated patient during a gross washing process and provides the highest level of protection to unit operators that may be dressed in street clothes. The system comprises an isolation apparatus, a washing chamber, an output enclosure, a method of passing a non-ambulatory patient through the system and a waste collection system. The parts of the system may function together as a single, integral unit for mass decontamination at the site of exposure. Further, the system may be used for non-ambulatory and ambulatory humans and/or animals and possibly equipment and other objects.

Abstract: A method of cleaning and maintenance used for a rotational etching tool, combining the physical characteristics of water (splashed off after striking the surface of a spinning wafer) and a PM (preventive maintenance) computer program, can automatically and quickly clean the interior of the etching tool. By setting the appropriate parameters of PM program, single or all of process chambers can be well cleaned. Also, the DI water dropping positions on the wafer can be altered to create more splashing angles. To clean the sidewalls of the etching chambers, the wafer supporting means is moved between the process chamber and the rotating speed thereof is preferably alter while it is moving. The PM program of the present invention can be executed whenever the cleaning job needs to be done. It not only is timesaving and easy to apply, but also keeps the wafer in a almost-no-particle environment while being etched.

Abstract: A sand removal system for an oil storage tank includes an upper and lower pipe ring each having multiple nozzles for spraying a wash fluid. The nozzles are aimed to create a vortex or spiral motion within the tank and suspend the sand. A suction pipe with a centrally located inlet removes the wash fluid and suspended sand.

Abstract: Resists can be removed while metal contamination of wafers, etc. and generation of particles, and growth of oxide films are suppressed. An ozone gas feed system 40 for feeding ozone gas 2 into a processing vessel 10 holding wafers W, and a steam feed means 30 for feeding steam 1 into the processing vessel 10 are provided. An on-off valve 49 inserted in the ozone gas feed pipe 42, an on-off valve 36 inserted in the steam feed pipe 34 and a switch 48 and an on-off valve 49 of ozone gas generator 41 are connected to CPU 100 which is control means and are controlled by the CPU 100. Ozone gas 2 is fed into the processing vessel 10 to pressurize the atmosphere surrounding the wafers W, and then steam 1 is fed into the processing vessel 10 while ozone gas 2 is fed into the processing vessel 10, whereby a resist of the wafers W can be removed with the steam 1 and the ozone 2 while metal corrosion, etc. can be prevented.

Abstract: The inventive device for cleaning substrates, especially semiconductor wafers, comprises a treatment basin for receiving at least one substrate, a cover for sealing said treatment basin, a first feeding device for controllably feeding in a reactive gas, a second feeding device for controllably feeding in at least one moist fluid for promoting a reaction between the reactive gas and a deposit to be removed from the substrate and a control device for controlling the concentration of moisture in the treatment basin.

Abstract: A device and method for processing substrates, whereby medium consumption and processing time are reduced. According to the inventive method, liquid is conducted to a surface of the substrate that is to be treated via at least one nozzle that is arranged in a substantially centric position with respect to said substrate and via a plurality of second nozzles that are controlled separately from the first nozzle.

Abstract: A portable apparatus cleans a passage such as an oxygen line by circulating a cleaning medium, such as a silicated alkaline cleaner such as OCC, through the passage. A rinse medium, such as distilled water, may than be circulated through the passage. The cleaning medium and the rinse medium may be filtered, and a flush medium is preferably circulated through the passage after the circulation of the cleaning medium and before the circulation of the rinse medium.

Abstract: A method for cleaning an apparatus using a clean-in-place system is disclosed. The clean-in-place system is in fluid communication with an inlet and an outlet of the apparatus. In the method, a cleaning composition having a measurable physical property (e.g., pH) is supplied from a cleaner tank into the inlet of the apparatus for a first period of time. A rinsing composition having the measurable physical property at a second measured value is then supplied from a rinse tank into the inlet of the apparatus for a second period of time. The measurable physical property is sensed versus time for fluids exiting the outlet of the apparatus, and a circulation time of the cleaning composition is determined. A closing time for a return valve of the cleaner tank is then determined for subsequent cleaning cycles such that minimal rinsing composition enters the cleaner tank during the subsequent cleaning cycle.

Abstract: There is provided a system in which transportation, assembly and maintenance can be easily carried out. The system comprises: a case carrying unit for carrying in/out a case accommodating therein the substrate; a liquid-processing unit and the processing liquid being supplied to process the substrate with the processing liquid; a substrate conveying unit for conveying the substrate between the case carrying unit and the liquid-processing unit; a processing liquid storing unit for storing, feeding and recovering the processing liquid which is supplied to the liquid-processing unit; and a plurality of frames each supporting one or more of the case carrying unit, the liquid-processing unit, the substrate conveying unit and the processing liquid storing unit, wherein the at least two of the plurality of frames are capable of being connected to and separated from each other.

Abstract: A method of cleaning a fouled RO membrane in a module for RO separation, the membrane having feed side and permeate side, the foulant accumulating at the feed side.

Abstract: A medical instrument washer is provided which includes a rack drawably fitted in a washing tub, for setting washing objects thereon, a flow passage having one end located on a rear side of the washing tub for supplying washing water to the rear side, and a washing duct on the rack having a washing water inlet in rear part thereof so as to be detachably connected to one end of the flow passage as the rack is drawn/pushed in. The medical instrument washer so constructed reduces washing water quantity, and pressure loss of washing water by improving a flow passage of the medical instrument washer.

Abstract: A method for cleaning an apparatus using a clean-in-place system is disclosed. The clean-in-place system is in fluid communication with an inlet and an outlet of the apparatus. In the method, a cleaning composition having a measurable physical property (e.g., pH) is supplied from a cleaner tank into the inlet of the apparatus for a first period of time. A rinsing composition having the measurable physical property at a second measured value is then supplied from a rinse tank into the inlet of the apparatus for a second period of time. The measurable physical property is sensed versus time for fluids exiting the outlet of the apparatus, and a circulation time of the cleaning composition is determined. A closing time for a return valve of the cleaner tank is then determined for subsequent cleaning cycles such that minimal rinsing composition enters the cleaner tank during the subsequent cleaning cycle.

Abstract: To provide a cleaning processing method and a cleaning processing apparatus which can improve cleaning efficiency. The apparatus is structured to install processing units 11a-11d which provide more than one kind of chemical liquids out of a plurality of chemical liquids A-C for processing wafers W, and to enable the same kind of a processing liquid to be provided for at least two processing units, and, upon successively processing objects-to-be-processed which require their own processing sequences, to consecutively load each object-to-be-processed W to a processing unit which stores designated chemical liquid for a processing sequence of the object-to-be-processed.

Abstract: A dish-cleaning appliance comprising a sink having a bowl defining a wash chamber with an open top for providing access to the wash chamber. A liquid recirculation system is provided for spraying liquid onto the dish rack to effect the cleaning of any dishes along the rack. A basket with a sprayer is disposed within the wash chamber. A self-aligning coupling fluidly connects a liquid conduit to the sprayer when the basket is seated.

Abstract: The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a gas-liquid mixture by mixing a liquid and a pressurized gas, to discharge the gas-liquid mixture to a substrate at high speeds. The mixture process is conducted in an open space out of the nozzle, and change in the supply pressure of the gas does not affect the supply of the liquid. The reaction products which having been generated on the substrate in etching process is removed at high speeds with the flow of the gas-liquid mixture, whereby the quality of the process is improved.

Abstract: A combination fluid and air washing apparatus for washing a vehicle's viewing surface. The apparatus includes a housing, where the housing is of a predetermined shape and size, a nozzle assembly, the nozzle assembly includes at least one fluid nozzle, an air nozzle to complement each of the fluid nozzles, and a shaft, the shaft being pivotally attached to the housing by a pivot means, the fluid and air nozzles are adjacently attached to the shaft and pointed towards the vehicle viewing surface, wherein the air nozzle is pointed lower on the vehicle viewing surface than the fluid nozzle. The apparatus also includes at least one fluid reservoir attached to the housing, wherein the fluid reservoir provides fluid to the fluid nozzle through a fluid feed, and an air compressor connected to the fluid reservoir and the air nozzle by a line, wherein said air compressor provides pressured air to the washing apparatus through the line.

Abstract: [Object] To reduce the amounts of cleaning liquids and rinse liquid used, as well as the energy consumption.

Abstract: A cleaning processing apparatus, which is one embodiment of a liquid processing apparatus for performing a liquid processing by supplying a predetermined process liquid to a target object to be processed such as a semiconductor wafer while rotating the target object, comprises a rotor for holding wafers W, a slidable process section for housing the rotor, and a cleaning liquid spurting nozzle for supplying a predetermined cleaning liquid to the wafers W. A housing for housing the slidable process section is of a hermetic structure so as to be substantially shielded from the outside.

Abstract: An apparatus and method are disclosed that can process a substrate such as a wafer while keeping high cleanliness. The apparatus comprises a center port 100, which is stationarily arranged in the center and on the surface of which at least one blow-off outlet is provided for blowing off fluid, and a rotating housing portion 200 which is capable of rotating about the center port 100. The rotating housing portion 200 comprises a top plate 210 comprising a main surface S2 that opposes a wafer W, and a lower housing being connected to the top plate 210 and rotatably driven by a rotation-driving member. When the surface S1 comprising blow-off outlets 151a and 153a of the center port 100 is offset from the main surface S2 of the top plate 210 and fluid is blown off from the blow-off outlet 151a, the substrate W is contactlessly held above the main surface S2 of the top plate 210 and the surface S1 of the center port 100.

Abstract: A flushing system for flushing away any coking material which may have built up in the bearing of a gas turbine. Three fluid tanks respectively contain a solvent for dissolving the coked material, a cleaner and a lubricant. By means of a three-way valve, one of the fluids is provided to a supply pump for delivery to the bearing housing via a quick disconnect coupling. Fluid is returned to the appropriate tank by means of a return pump, via a quick disconnect coupling and another three-way valve between the return pump and the tanks. The system includes respective filters for filtering the return fluids and the entire system may be carried on a wheeled cart for servicing the gas turbine.

Abstract: A flushing system for air conditioning drainage pipes including a pipe assembly, a valve for selectively blocking the pass of the upstream drain line and a connection for a pressurized fluid supply. Each of the pipe assembly ends has a slidable tubular member cooperatively larger in diameter than said pipe assembly and drain line to snugly receive the ends of the pipe assembly. The tubular members are slid partially over the drain line ends and the ends of the pipe assembly. An alternate embodiment uses cooperating threads on the ends of the pipe assembly and one of the ends of the slidable tubular members. To flush the system with a fluid (liquid or gas), a user closes the valve assembly by rotating the ball valve member and applies the pressurized fluid to flush the system. Also, O-rings are used to enhance the sealing engagement in yet another embodiment.

Abstract: Dishwashing machine with a distribution valve (5) which is arranged on the delivery-side section of the washing liquor circulation pump and is provided with at least two outlets (51, 52, 53) connected via associated conduits (61, 62, 63) to rotating spray arms, as well as at least a shutter means (8). The shutter means (8) is not only adapted to be alternately displaced from a position in which it enables liquor to be delivered to at least a rotating spray arm to a position in which it enables a second rotating spray arm to be supplied with liquor, in accordance with a programmed stop time (D1) of the pump, but is also adapted to be displaced into a further position in which it enables liquor to be delivered to at least two rotating spray arms at the same time, in accordance with a second stop time (D2) of the same pump.

Abstract: The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a gas-liquid mixture by mixing a liquid and a pressurized gas, to discharge the gas-liquid mixture to a substrate at high speeds. The mixture process is conducted in an open space out of the nozzle, and change in the supply pressure of the gas does not affect the supply of the liquid. The reaction products which having been generated on the substrate in etching process is removed at high speeds with the flow of the gas-liquid mixture, whereby the quality of the process is improved.

Abstract: A hard floor surface cleaning apparatus includes an aerator, a rotating scrub medium engaging the hard floor surface, a fluid conveyor, and a fluid recovery device. The aerator is configured to produce a foam-like aerated cleaning liquid from a cleaning liquid. The fluid conveyor is coupled to the aerator and is configured to deliver the aerated cleaning liquid onto the scrub medium. The fluid recovery device is configured to remove soiled solution from the hard floor surface.

Abstract: In order to free a seized valve, an inspection port is formed in a wall of the valve body and the areas where the valve is seized are determined. One or more injection ports are formed in the valve body adjacent to the seized portions of the valve, pressurized fluid (preferably an insoluble lubricant having a very high cone penetration) is injected through the or each injection port and the injection ports are then closed.

Abstract: The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel. In an embodiment of the present invention, a semiconductor structure is placed into a first treatment vessel and chemically treated. Following the chemical treatment, the semiconductor structure is transferred directly to a second treatment vessel where it is rinsed with DI water and then dried. The second treatment vessel is flooded with both DI water and a gas that is inert to the ambient, such as nitrogen, to form a DI water bath upon which an inert atmosphere is maintained during rinsing. Next, an inert gas carrier laden with IPA vapor is fed into the second treatment vessel. After sufficient time, a layer of IPA has formed upon the surface of the DI water bath to form an IPA-DI water interface.

Abstract: A to-be-cleaned substrate is cleaned by use of an acid liquid agent in a cleaning cup, the remaining acid liquid agent is washed out by use of pure water, then an alkaline liquid agent is emitted to the surface of the to-be-cleaned substrate in the same cleaning cup to remove the acid liquid agent remaining on the to-be-cleaned substrate. A neutralization reaction between the acid and alkali is caused by emitting the alkaline liquid agent to the surface of the to-be-cleaned substrate so as to efficiently remove the acid liquid agent remaining on the surface of the to-be-cleaned substrate.

Abstract: Workpieces requiring low levels of contamination, such as semiconductor wafers, are loaded into a rotor within a process chamber. The process chamber has a horizontal drain opening in its cylindrical wall. The chamber is closed via a door. A process or rinsing liquid is introduced into the chamber. The liquid rises to a level so that the workpieces are immersed in the liquid. The chamber slowly pivots or rotates to move the drain opening down to the level of the liquid. The liquid drains out through the drain opening. The drain opening is kept near the surface of the liquid to drain off liquid at a uniform rate. An organic solvent vapor is introduced above the liquid to help prevent droplets of liquid from remaining on the workpieces as the liquid drains off. The rotor spins the workpieces to help to remove any remaining droplets by centrifugal force.

Abstract: Valve (1) with a through-going axial bore (4), a first spindle (5) axially displaceable in the bore (4), an elastic/flexible seal (10) placed at the one end surface (6) of the first spindle (5), at least two hollow connection branches (7, 8), each of which connects the valve to an outer coupling, said first spindle (5) in a first position forming a first annular sealing surface (9) between the outer surface of the seal (10) and the inner bottom (11) of the valve body which contains the outlet opening (29), and where the first spindle (5) lies coaxially inside a second axially displaceable and hollow spindle (12) lying in the bore (4), the end surface of which or parts thereof (13) form a second annular sealing surface (14) between the outer surface of the seal (10) and the inner bottom (11) of the valve body at a second position radially from the first annular sealing surface (9).

Abstract: A modular gas control device for use with a compressed gas cylinder (111) comprises a primary module (152) and a secondary module (252) mounted on the primary module. The primary module comprises a first supporting body (154) having a first main gas flow path (155) through the body. The supporting body has input connecting means (156) for mounting the body on the cylinder (111) and connecting the gas flow path (155) to communicate with the gas cylinder through a first flow path (157). Pressure reducing means (166) provides gas in the flow path at a lower pressure than in the container. Output connecting means (170) downstream of the pressure reducing means provides a low pressure outlet from the main gas flow path. A high pressure shut-off valve (164) is positioned upstream of the pressure reducing means, and filling means (161, 160) allows filling of the cylinder with compressed gas through the input connecting means (156) along a second flow path (159) separate from the input flow path (157).

Abstract: A self-service car wash provided with coin-operated time-controlled wash and rinse spray capability includes an integrated exit air drying apparatus controlled by the coin-operated controller.

Abstract: A slurry tank autocleaner for cleaning an empty slurry tank. A first pipe is inserted in the interior of the slurry tank, where the first pipe has an open end located inside the slurry tank. A first nozzle is disposed on the open end of the first pipe. A cover is used to cover the slurry tank, where the cover has a plurality of second nozzles targeting the slurry tank. A second pipe is connected to the second nozzles. A controller is used to control chemical, pure water or dry gas to spurt from the first nozzle and the second nozzles through the first pipe and the second pipe. Thus, the slurry tank can be automatically cleaned.

Abstract: A substrate processing unit 10 capable of restraining contaminants such as particles, watermarks and the like from being adhered to a substrate such as a semiconductor wafer and the like, wherein the substrate processing unit 10 comprises a processing bath 11 for accommodating the substrates (e.g., wafer W) to be processed, a processing fluid introduction pipe 21 for supplying processing fluid (e.g., purified water J) to the processing bath 11, a vapor generating bath 61 for accommodating an organic solvent S (e.g., IPA fluid), a processing fluid discharge section 30 for discharging processing fluid from the processing bath 11, and a solvent heating unit 62 for heating the organic solvent S inside the vapor generating bath 61, wherein the vapor generating bath 61 introduces vapor generated from the organic solvent S to the inside of the processing bath 11, and the solvent heating unit 62 heats the organic solvent S inside the vapor generating bath 61 at a temperature in the range of 50° C.

Abstract: This invention provides a process for treating a workpiece having a front side, a back side, and an outer perimeter. In accordance with the process, a processing fluid is selectively applied or excluded from an outer peripheral margin of at least one of the front or back sides or the workpiece. Exclusion and/or application of the processing fluid occurs by applying one or more processing fluids to the workpiece as the workpiece and corresponding reactor are spinning about an axis of rotation that is generally orthogonal to the center of the face of the workpiece being processed. The flow rate of the one or more processing fluids, fluid pressure, and/or spin rate are used to control the extent to which the processing fluid is selectively applied or excluded from the outer peripheral margin.

Abstract: The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel.

Abstract: A drum washer has a base, a barrel support structure, and a water delivery system. A hollow drum is turned over and placed on the drum washer by inserting a spray head of the water delivery system through a hole in a top cover of the drum and into the interior of the drum. The barrel support structure holds the drum at a fixed angle while water is sprayed from the spray head onto interior surfaces of the drum. The water rinses the interior surfaces of the drum and drains out the hole in the top cover of the drum.

Abstract: The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel.

Abstract: Washing items are washed simultaneously with softening washing water comprising alkali metal ion and at least one of carbonate ion and bicarbonate ion. The washing water before being softened is obtained by electrolyzing an aqueous solution of sodium hydrogencarbonate having a pH of 9.5 or more and an electric conductivity of 150 mS/m or more. The softened washing water has a total hardness of 40 ppm or less.

Abstract: A semiconductor cleaning apparatus and a method of cleaning a wafer surface using the semiconductor cleaning apparatus are provided. In the semiconductor cleaning apparatus, wastewater is easily treated, the consumption of chemical usage is considerably reduced, and a contaminant removal efficiency on the wafer surface is maximized even at a room temperature or a low temperature by using a mixed chemical solution composed of an aqueous ammonium hydroxide and ozone as a cleaning solution in cleaning the wafer surface. In the method of cleaning the wafer surface, a cleaning solution is formed in a mixing tank by adding ozone to aqueous ammonium hydroxide. The cleaning solution is supplied into a cleaning bath through a filter for removing ozone bubble. Megasonic power is applied to the cleaning solution in the cleaning bath using a megasonic transducer. A wafer dipped in the cleaning solution which is at a room temperature to remove the contaminants on wafer surface.

Abstract: An automotive vehicle washing system includes a frame comprising a bridge member end opposed and support sections mounted for linear reciprocating movement on spaced apart support rails. Pivoting washing nozzle support arms are mounted on the bridge section and are interconnected by a drive motor and drive pulleys to move in opposite directions to wash the sides and opposite ends of a vehicle. Each arm includes movable arm sections supporting spaced apart nozzle assemblies which may move toward each other or away from each other to size a vehicle according to its width. Each arm includes opposed elongated beam members which also provide fluid conducting passages for conducting washing fluids to the nozzle assemblies. Certain ones of the nozzle assemblies are drivenly connected to an oscillating servomotor. The servomotor is also used to position the pivoting arm sections through a lost motion coupling and a gear drive unit.

Abstract: A semiconductor substrate cleaning apparatus, a method of cleaning a semiconductor substrate and a method of manufacturing a semiconductor device are obtained, in which reduction of production yield of a semiconductor device can be prevented. The semiconductor substrate cleaning apparatus includes a holding member holding a semiconductor substrate and a cleaning member allowing a cleaning medium to be supplied only to a part of a surface of the semiconductor substrate while the semiconductor substrate held by the holding member is fixed. In such a manner, the cleaning medium is supplied to the semiconductor substrate while the semiconductor substrate is not rotated but fixed, whereby only a part of the surface of the semiconductor substrate can be cleaned.

Abstract: A self-service car wash provided with coin-operated time-controlled wash and rinse spray capability includes an integrated manually operable, air drying spray nozzle and associated pressurized air supply controlled by the coin-operated controller.