Abstract: Methods for producing System-in-Packages (SiPs) containing embedded Surface Mount Device (SMD) modules are provided, as SiPs containing SMD modules. In one embodiment, the fabrication method includes positioning a semiconductor die and first preassembled SMD module, which contains a plurality of SMDs soldered to an interposer substrate, in predetermined spatial relationship. The preassembled SMD module and the semiconductor die are overmolded to yield a molded panel having a frontside at which the first preassembled SMD module and the semiconductor die are exposed. A Redistribution Layer (RDL) structure can be formed over the frontside of the molded panel containing interconnect lines electrically coupling the semiconductor die and the first preassembled SMD module. The molded panel may then undergo singulation to produce an SiP having a molded body in which the semiconductor die and the first preassembled SMD module are embedded.

Abstract: An integrated circuit device includes a first substrate having a ground plane. The integrated circuit device also includes a second substrate. The second substrate has a first layer of passive devices. The passive devices include at least one inductor on a first side of the second substrate. The first layer of passive devices is substantially orthogonal to the ground plane and the second substrate supported by the first substrate. An inductor magnetic field is substantially parallel to the ground plane.

Abstract: A multilayer ceramic component includes a multilayer ceramic capacitor including a ceramic body including a plurality of first and second internal electrodes having respective dielectric layers interposed therebetween, and first and second external electrodes respectively including first and second connection portions, and first and second band portions extended from the first and second connection portions, and first and second metal frames respectively including first and second upper horizontal portions, first and second lower horizontal portions, and first and second inclined support portions diagonally connecting the first and second upper horizontal portions and the first and second lower horizontal portions, respectively.

Abstract: A wiring substrate includes a core substrate. The core substrate includes a first surface, a second surface, and an opening extending through the core substrate between the first and second surfaces. A first conductive film is formed on the first surface and covers the opening. A second conductive film is formed on the second surface. The second conductive film covers the opening. An electronic component is arranged in the opening and connected to the first conductive film. An insulator fills the opening. A first wiring portion includes alternately stacked insulative layers and wiring layers and covers the first surface of the core substrate and the first conductive film. A second wiring portion includes alternately stacked insulative layers and wiring layers, and covers the second surface of the core substrate and the second conductive film.

Abstract: One or more embodiments are directed to semiconductor packages, including stacked packages, with one or more cantilever pads. In one embodiment a recess is located in a substrate of the package facing the cantilever pad. The cantilever pad includes a conductive pad on which a conductive ball is formed. The cantilever pad is configured to absorb stresses acting on the package.

Abstract: Stacked microelectronic devices and methods for manufacturing such devices are disclosed herein. In one embodiment, a stacked microelectronic device assembly can include a first known good packaged microelectronic device including a first interposer substrate. A first die and a first through-casing interconnects are electrically coupled to the first interposer substrate. A first casing at least partially encapsulates the first device such that a portion of each first interconnect is accessible at a top portion of the first casing. A second known good packaged microelectronic device is coupled to the first device in a stacked configuration. The second device can include a second interposer substrate having a plurality of second interposer pads and a second die electrically coupled to the second interposer substrate. The exposed portions of the first interconnects are electrically coupled to corresponding second interposer pads.

Abstract: An integrated circuit is attached to a substrate with a controlled stand-off height, by mounting a plurality of stud bumps of the controlled stand-off height to the substrate at predetermined locations, placing adhesive dots over the stud bumps, placing the integrated circuit on the substrate over the adhesive dots, and applying downward pressure on the integrated circuit until the integrated circuit is in mechanical contact with the stud bumps.

Abstract: An LED module is provided with a lead, an LED chip mounted on the obverse surface of the lead, and a case covering at least a part of the lead. The case has a side wall surrounding the LED chip. The lead includes a thin extension whose bottom surface is spaced apart upward from the reverse surface of the lead in the thickness direction of the lead. The case is provided with a holding portion that covers at least a part of each of the top surface and the bottom surface of the first thin extension.

Abstract: An apparatus and method for monitoring parameters of a tire using a piezoelectric device is provided. The piezoelectric device is mounted as part of a tire mountable apparatus with a circumferential orientation in a tire such that that the direction defined by length of the piezoelectric device is generally aligned with the direction of rotation of the tire. This can lead to increased coupling of the piezoelectric device to changing circumferential tire shape as the piezoelectric device enters and exits the contact patch of the tire while at the same time reducing the coupling of the piezoelectric device to changing lateral tire shape. Contact patch entry and exit times from piezoelectric signals generated by the piezoelectric device can be more readily identified, leading to increased accuracy of tire parameters determined from the contact patch entry and exit times, such as tire revolution count, tire speed, and contact patch angle.

Abstract: A substrate having an edge; a first and second active trace, wherein the first active trace corresponds to a first signal of a differential pair and the second active trace corresponds to a second signal of the differential pair; and a first and second conductive via which are located at different distances from the edge. The first active trace is routed to the first conductive via, and the second active trace is routed around the first conductive via to the second conductive via such that the second active trace is between the first conductive via and the edge. The substrate includes a first plating trace in electrical contact with the first active trace, and a second plating trace in electrical contact with the second active trace, wherein the first and second plating traces are routed to the edge on different metal layers of the substrate.

Abstract: A semiconductor device includes a first circuit board having a first chip and a second chip mounted on a first base, the second chip having a greater height from the first base than that of the first chip; and a second circuit board having a third chip and a fourth chip mounted on a second base, the fourth chip having a greater height from the second base than that of the third chip, the second circuit board being disposed overlapping with the first base such that the second base faces the first chip, and the second base not contacting the second chip.

Abstract: A method of fabricating a pixel array includes forming a transistor network along a frontside of a semiconductor substrate. A contact element is formed for every pixel in the pixel array that is electrically coupled to a transistor within the transistor network. An interconnect layer is formed upon the frontside to control the transistor network with a dielectric that covers the contact element. A cavity is formed in the interconnect layer. A conductive layer is formed along cavity walls of the cavity and a dielectric layer is formed over the conductive layer within the cavity. A photosensitive semiconductor material is deposited over the dielectric layer within the cavity. An electrode cavity is formed that extends into the contact element. The electrode cavity is at least partially filled with a conductive material to form an electrode. The electrode, the conductive layer, and the photosensitive semiconductor material form a photosensitive capacitor.

Abstract: An electromagnetic actuator includes a coil that is selectively energizable by an electric current. The electromagnetic actuator further includes an armature having a outwardly extending prong. The armature is movably disposed with respect to the coil such that when the coil is energized with the electric current, the armature moves in relation to the coil and disposing thereby the prong on a first side of the coil. A flux gatherer is provided to be disposed around a second side of the coil, thereby channeling magnetic flux emanating from the coil back into the armature and prong.

Abstract: A method of manufacturing a semiconductor package includes forming a bonding layer on a carrier substrate, bonding an inner substrate to the carrier substrate, removing the carrier substrate, and forming a gap-filling portion by removing a portion of the bonding layer to expose a portion of a solder ball provided in the inner substrate. The inner substrate may be mounted on a package substrate and a semiconductor chip may be mounted on the inner substrate.

Abstract: A printed circuit board with embedded component includes a double-sided printed circuit board, an electronic component, a plurality of conductive paste blocks, an insulating layer and a wiring layer near the first wiring layer, an insulating layer and a wiring layer near the second wiring layer. The double-sided printed circuit board comprising a first wiring layer, a base, and a second wiring layer. The first wiring layer and the second wiring layer are arranged on opposite sides of the base. The second wiring layer includes a plurality of electrical contact pads. The base defines a number of conductive vias. Each electrical contact pad is aligned with and electrically connected to one corresponding conductive via. The conductive paste blocks are electrically connecting to the conductive vias. The electronic component is electrically connected to the conductive paste blocks. The two insulating layers cover the electronic component and the second wiring layer.

Abstract: A vehicular electronic device has a semiconductor package and a multilayer wiring board. An electrode pad of the multilayer wiring board, to which a signal terminal of the semiconductor package is soldered, has a wiring pattern in an inner layer of the multilayer wiring board. A solder resist is applied and spaced from a periphery of the electrode pad to the exterior. The signal terminal is soldered to the electrode pad to cover an upper surface and an upper end of a side surface of the electrode pad. As a result, a crack is less likely to occur in solder connected to the signal terminal. Therefore, the signal terminal can be electrically connected with high reliability even when the signal terminal is provided in the semiconductor package with a small number.

Abstract: A computer system for multi-processing purposes. The computer system has a console comprising a first coupling site and a second coupling site. Each coupling site comprises a connector. The console is an enclosure that is capable of housing each coupling site. The system also has a plurality of computer modules, where each of the computer modules is coupled to a connector. Each of the computer modules has a processing unit, a main memory coupled to the processing unit, a graphics controller coupled to the processing unit, and a mass storage device coupled to the processing unit. Each of the computer modules is substantially similar in design to each other to provide independent processing of each of the computer modules in the computer system.

Abstract: An integrated circuit assembly includes a first electrically conductive sheet, a second electrically conductive sheet electrically isolated from the first electrically conductive sheet, a non-conductive material disposed between the first and second electrically conductive sheets, an electrical trace disposed on the non-conductive material and electrically isolated from the first and second electrically conductive sheets, and an integrated circuit having at least one lead directly connected to the first electrically conductive sheet, at least one lead directly connected to the second electrically conductive sheet, and at least one lead electrically connected to the electrical trace. Other integrated circuit assemblies and method for making integrated circuit assemblies are also disclosed.

Abstract: The invention provides a semiconductor package assembly. The semiconductor package assembly includes a redistribution layer (RDL) structure die-attach surface and a bump-attach surface opposite the die-attach surface. A semiconductor die is mounted on the die-attach surface of the redistribution layer (RDL) structure. A first solder mask layer is disposed on the die-attach surface. The first solder mask layer surrounds the semiconductor die. An additional circuit structure is disposed on a portion of the first solder mask, surrounding the semiconductor die. The additional circuit structure includes a pad portion having a first width and a via portion has a second width that is less than the first width. The via portion passes through the first solder mask layer to be coupled the redistribution layer (RDL) structure.

Abstract: A structure includes a die substrate; a passivation layer on the die substrate; first and second interconnect structures on the passivation layer; and a barrier on the passivation layer, at least one of the first or second interconnect structures, or a combination thereof. The first and second interconnect structures comprise first and second via portions through the passivation layer to first and second conductive features of the die substrate, respectively. The first and second interconnect structures further comprise first and second pads, respectively, and first and second transition elements on a surface of the passivation layer between the first and second via portion and the first and second pad, respectively. The barrier is disposed between the first pad and the second pad. The barrier does not fully encircle at least one of the first pad or the second pad.

Abstract: A circuit board includes a substrate, a first ground electrode group, and a first pair of signal electrodes. The first ground electrode group includes a plurality of first ground electrodes, where each of the plurality of the first ground electrodes is disposed at a corresponding one of vertexes of a first rectangular area in a surface of the substrate. the first pair of signal electrodes is disposed in the first rectangular area and is arranged in a first direction parallel to a side of the first rectangular area.

Abstract: A high density region for a low density circuit. At least a first liquid dielectric layer is deposited on the first surface of a first circuitry layer. The dielectric layer is imaged to create plurality of first recesses. Surfaces of the first recesses are plated electro-lessly with a conductive material to form first conductive structures electrically coupled to, and extending generally perpendicular to, the first circuitry layer. A plating resist is applied. A conductive material is electro-plated to the first conductive structure to substantially fill the first recesses, and the plating resist is removed.

Abstract: A semiconductor device has a semiconductor die with composite bump structures over a surface of the semiconductor die. A conductive layer is formed over the substrate. The conductive layer has a channel in an interconnect site of the conductive layer. The channel extends beyond a footprint of the composite bump structures. The semiconductor die is disposed over the substrate. The bump material of the composite bump structures is melted. The composite bump structures are pressed over the interconnect site of the conductive layer so that the melted bump material flows into the channel. Electrical continuity between the composite bump structures and conductive layer is detected by a presence of the bump material in the channel. No electrical continuity between the composite bump structures and conductive layer is detected by an absence of the bump material in the channel. The electrical continuity can be detected by visual inspection or X-ray.

Abstract: In a ceramic multilayer substrate formed by stacking and firing a plurality of insulating layers, the insulating layer in an uppermost surface layer includes a ceramic layer, a contraction suppression layer stacked on the ceramic layer, and a surface-layer via conductor penetrating through the ceramic layer and the contraction suppression layer and having a tapered shape gradually tapering toward the lower layer side. The surface-layer via conductor has an end surface that is exposed from the contraction suppression layer forming the surface of the ceramic multilayer substrate, and that is directly connected to a terminal of a component mounted to the surface of the ceramic multilayer substrate. A weight ratio of alumina contained in the contraction suppression layer is set higher than a weight ration of alumina contained in the ceramic layer.

Abstract: An embodiment of an multilayer ceramic capacitor with interposer includes: an interposer 20 having an insulated substrate 21, two first conductor pads 22, two second conductor pads 23 and two conductor vias 24 connecting the first conductor pads 22 and second conductor pads 23; and a multilayer ceramic capacitor 10 having external electrodes 12 that are each connected to each first conductor pad 22 of the interposer 20 via solder SOL. Each conductor via 24 of the interposer 20 has a through hole 24a inside, and a void GA not filled with the solder SOL is present in each through hole 24a on the second conductor pad 23 side. The multilayer ceramic capacitor with interposer is capable of suppressing noise due to electrostriction.

Abstract: The assembled board includes: an insulating board including a plurality of product regions disposed in a central portion and a marginal region disposed in an outer peripheral portion; a conductor layer disposed on an upper surface side and a lower surface side of the insulating board, the conductor layer having a volume different between the upper surface side and the lower surface side; and a solder resist layer laminated on the upper and lower surfaces of the insulating board, and a plurality of openings are formed in the solder resist layer on a surface on a side with a smaller volume of the conductor layer so that a volume in the marginal region of the solder resist layer becomes smaller than a volume in the marginal region of the solder resist layer on a surface on an opposite side.

Abstract: A substrate includes a functional element. An insulating first film forms a cavity which stores the functional element, together with the substrate, and includes a plurality of through-holes. An insulating second film covers the plurality of through-holes, is formed on the first film, and has a gas permeability which is higher than that of the first film. An insulating third film is formed on the second film and has a gas permeability which is lower than the second film. An insulating fourth film is formed on the third film and has an elasticity which is larger than the third film.

Abstract: The invention provides a glass pane that has a transparent electrically conductive coating on a surface of the glass pane, such that the glass pane has a coated surface. The coated surface has a central region and a perimeter region. The transparent electrically conductive coating has a higher electrical conductivity at the central region than it does at the perimeter region. In some embodiments, the coated glass pane is part of an IG unit. Also provided are methods of producing a coated glass pane having an anti-condensation perimeter region.

Abstract: Some embodiments described herein include apparatuses and methods of forming such apparatuses. In one such embodiment, an apparatus may include an electronic arrangement, a first die, and a second die coupled to the first die and the electronic arrangement. The electronic arrangement may include an opening. At least a portion of the die may occupy at least a portion of the opening in the electronic arrangement. Other embodiments including additional apparatuses and methods are described.

Abstract: A device and method for localizing underfill includes a substrate, a plurality of dies, and underfill material. The substrate includes a plurality of contacts and a plurality of cavities separated by a plurality of mesas. The plurality of dies is mounted to the substrate using the plurality of contacts. The underfill material is located between the substrate and the dies. The underfill material is localized into a plurality of regions using the mesas. Each of the contacts is located in a respective one of the cavities. In some embodiments, the substrate further includes a plurality of channels interconnecting the cavities. In some embodiments, the substrate further includes a plurality of intra-cavity mesas for further localizing the underfill material. In some embodiments, outer edges of a first one of the dies rest on first mesas located on edges of a first one of the cavities.

Abstract: Methods for connecting chips to a chip carrier are disclosed. In some embodiments the method for connecting a plurality of chips to a chip carrier includes placing first chips on a transfer carrier, placing second chips on the transfer carrier, placing the transfer carrier with the first and second chips on the chip carrier and forming connections between the first chips and the chip carrier and the second chips and the chip carrier.

Abstract: An assembly (101) comprising a semiconductor device (110) with solderable bumps (112); a substrate (120) with a layer (130) of a first insulating compound and an underlying metal layer (140) patterned in contact pads (141) and connecting traces (142), the insulating layer having openings (132) to expose the surface (142a) and sidewalls (142b) of underlying traces; the device bumps soldered onto the contact pads, establishing a gap (150) between device and top insulating layer; and a second insulating compound (160) cohesively filling the gap and the second openings, thereby touching the underlying traces, the second insulating compound having a higher glass transition temperature, a higher modulus, and a lower coefficient of thermal expansion than the first insulating compound.

Abstract: The embodiments described provide elongated bonded structures near edges of packaged structures free of solder wetting on sides of copper posts substantially facing the center of the packaged structures. Solder wetting occurs on other sides of copper posts of these bonded structures. The elongated bonded structures are arranged in different arrangements and reduce the chance of shorting between neighboring bonded structures. In addition, the elongated bonded structures improve the reliability performance.

Abstract: A capacitor element includes a plurality of flexible base material layers that are stacked upon each other, and conductor patterns that are provided on the flexible base material layers and that define a capacitor. The capacitor element also includes a flexible portion, and a rigid portion having a larger number of stacked flexible base material layers than the flexible portion. Conductor pattern pairs that define the capacitor are provided in both the flexible portion and the rigid portion. The conductor pattern pair that is provided in the rigid portion is connected in series with the conductor pattern pair that is provided in the flexible portion. The conductor pattern pair that is provided in the rigid portion has a larger number of tiers than the conductor pattern pair that is provided in the flexible portion.

Abstract: A voltage smoothing circuit includes a multilayer capacitor including a first capacitance unit and a second capacitance unit and a regulator including an input terminal which is electrically connected to the second capacitance unit and an output terminal which is electrically connected to the first capacitance unit. The regulator calculates a first voltage which is applied to the first capacitance unit based on a second voltage which is applied to the second capacitance unit from the input terminal such that a potential difference which is applied to the first capacitance unit decreases or increases when a potential difference which is applied to the second capacitance unit increases or decreases, and outputs the first voltage from the output terminal.

Abstract: The present disclosure relates to a ring-frame power package. The ring-frame power package includes a thermal carrier and a ring structure. The thermal carrier has a carrier surface. The ring structure is disposed over the carrier surface of the thermal carrier so that a portion of the carrier surface is exposed through an interior opening of the ring body. The ring structure also includes one or more interconnect tabs that extend outward from an outer periphery of the ring body. Each interconnect tab includes a top plated area that covers at least a portion of a top surface and a bottom plated area that covers at least a bottom surface of the respective interconnect tab. Notably, each top plated area also covers a contact portion of the ring body that is adjacent to the respective interconnect tab. Each top plated area is electrically coupled to the corresponding bottom plated area.

Abstract: The invention relates to an electric contact device that is part of an electric switching device able to allow or interrupt the passage of the electric current, comprising at least one moving support (33, 35) and a contact pad (60, 62) mounted on the moving support (33, 35), the moving support (33, 35) being able to move to position the contact pad (60, 62) in contact with a fixed contact surface (38, 40) connected to an electrical conductor, the contact pad (60, 62) comprising a contact surface (34, 36) designed to cooperate with said fixed contact surface (38, 40). The contact surface (34, 36) of the contact pad (60, 62) comprises a first spherical portion, comprising an actual zone of contact with said fixed contact surface (38, 40) in the position allowing the passage of current, and, in the continuation of the first spherical portion, a second convex portion with a variable shape going from spherical to cylindrical.

Abstract: A method and apparatus is disclosed for protecting electronic devices from security breaches (e.g., in the form of DPA attacks) by managing input/output (I/O) pin states. The technique is particularly useful in financial applications in which data security related operations, such as those involving cryptography, are performed by payment card readers, and the power supplied to drive the operations are measured and analyzed by attackers to extract sensitive information. The technique prevents any external device from measuring the operation power by disabling the I/O pins. The I/O pins are set to a logic low at any given time a data security related operation is performed. As a result, no communication with the external environment is possible during the data security operation, and external power measurements by DPAs are prevented.

Abstract: A device includes a bottom package component that includes a bottom die, and a dam over a top surface of the bottom die. The dam has a plurality of sides forming a partial ring, with an air gap surrounded by the plurality of side portions. The air gap overlaps the bottom die. A top package component is bonded to the bottom package component, wherein the air gap separates a bottom surface of the top package component from the bottom die.

Abstract: A multilayer ceramic component includes a multilayer ceramic capacitor including a ceramic body including a plurality of first and second internal electrodes, and first and second external electrodes, first and second insulation frames respectively including first and second horizontal insulation portions and first and second vertical insulation portions, first and second external conductive electrodes including first and second horizontal conductive portions and first and second vertical conductive portions, first and second internal conductive electrodes disposed on internal surfaces of the first and second vertical insulation portions and connected to the first and second external electrodes, and electrical connection portions.

Abstract: A structure includes a die substrate; a passivation layer on the die substrate; first and second interconnect structures on the passivation layer; and a barrier on the passivation layer, at least one of the first or second interconnect structures, or a combination thereof. The first and second interconnect structures comprise first and second via portions through the passivation layer to first and second conductive features of the die substrate, respectively. The first and second interconnect structures further comprise first and second pads, respectively, and first and second transition elements on a surface of the passivation layer between the first and second via portion and the first and second pad, respectively. The barrier is disposed between the first pad and the second pad. The barrier does not fully encircle at least one of the first pad or the second pad.

Abstract: A substrate includes an insulating substrate, a metal layer formed on one surface of the insulating substrate, and an electronic component soldered to the surface of the metal layer. The metal layer is formed of a metal plate. The surface of the metal layer has a soldering area, and a groove portion positioned on the outer periphery of the soldering area.

Abstract: The present invention aims to provide a backdrilling method and a backdrilling apparatus that can ensure the backdrilling depth accuracy. Using a multilayer printed wiring board in which a reference depth detection region is allocated where a reference depth detection layer is formed in the same layer with an internal wiring layer electrically connected to a stub, the thickness and the depth of the reference depth detection layer are measured in the reference depth detection region using a drill bit. The drill bit is moved relative to the multilayer printed wiring board to a backdrilling portion. The drilling is performed using the drill bit to the depth which is calculated using the ratio of the depth of the reference depth detection layer to the thickness of the multilayer printed wiring board in the reference depth detection region.

Abstract: A method forming packaged semiconductor devices includes providing a completed semiconductor package having a die with bond pads coupled to package pins. Sensor precursors including an ink and a liquid carrier are additively printed directly on the die or package to provide precursors for electrodes and a sensing material between the sensor electrodes. Sintering or curing removes the liquid carrier such that an ink residue remains to provide the sensor electrodes and sensing material. The sensor electrodes electrically coupled to the pins or bond pads or the die includes a wireless coupling structure coupled to the bond pads and the method includes additively printing an ink then sintering or curing to form a complementary wireless coupling structure on the completed semiconductor package coupled to the sensor electrodes so that sensing signals sensed by the sensor are wirelessly transmitted to the bond pads after being received by the wireless coupling structure.

Abstract: Circuit having a first printed circuit board and a second printed circuit board. In the circuit, the printed circuit boards spaced apart from one another by means of an air gap are mechanically connected together by at least one power semiconductor.

Abstract: A method for fabricating a semiconductor device is disclosed. A packaged semiconductor device is provided having copper ball bonds attached to aluminum pads. The packaged device is treated for at least one cycle at a temperature in the range from about 250° C. to 270° C. for a period of time in the range from about 20 s to 40 s.

Abstract: A method for making a support structure for a probing device includes a step of providing a substrate having first internal conductive lines, a carrier having second internal conductive lines and a thickness less than 2 mm for packaging an integrated circuit chip, solder balls, and photoresist support blocks made by lithography in a way that the solder balls and the photoresist support blocks are disposed between the substrate and the carrier, the photoresist support blocks separately arranged from each other, and at least one of the photoresist support blocks is disposed between two adjacent solder balls. The method further includes a step of electrically connecting the first internal conductive lines with the second internal conductive lines respectively by soldering the carrier and the substrate with the solder balls by reflow soldering.

Abstract: A chip component includes a substrate, an element circuit network including a plurality of element parts formed on the substrate, an external connection electrode provided on a surface of the substrate to provide external connection for the element circuit network, a plurality of fuses formed on the substrate and disconnectably connecting each of the plurality of element parts to the external connection electrode, a solder layer formed on an external connection terminal of the external connection electrode and a resin film which covers the surface of the substrate and other surface which intersects the surface of the substrate.

Abstract: The present invention is a multilayer wiring board and a method for manufacturing the same, the multilayer wiring board having a hole for interlayer connection penetrating a metal foil and an insulating layer; an overhang of the metal foil formed at an opening of the hole; lower space formed between the overhang and an inside wall of the hole; and interlayer connection in which the hole is filled with electrolytic filling plating layers, wherein the electrolytic filling plating layers are formed as at least two or more layers, the lower space is filled with any electrolytic filling plating layer except for an outermost layer of the two or more layers of electrolytic filling plating layers, and a diameter in the inside of the interlayer connection formed by any electrolytic filling plating layer except for an outermost layer is equal to or larger than a diameter of the opening.

Abstract: An image sensor chip having a sidewall interconnect structure to bond and/or electrically couple the image sensor chip to a package substrate is provided. The image sensor chip includes a substrate supporting an integrated circuit (IC) configured to sense incident light. The sidewall interconnect structure is arranged along a sidewall of the substrate and electrically coupled with the IC. A method for manufacturing the image sensor chip and an image sensor package including the image sensor chip are also provided.