Abstract: A solder alloy is a tin-silver-copper solder alloy substantially consisting of tin, silver, copper, bismuth, nickel, cobalt, and indium. With respect to the total amount of the solder alloy, the content ratio of the silver is 2 mass % or more and 5 mass % or less; the content ratio of the copper is 0.1 mass % or more and 1 mass % or less; the content ratio of the bismuth is 0.5 mass % or more and 4.8 mass % or less; the content ratio of the nickel is 0.01 mass % or more and 0.15 mass % or less; the content ratio of the cobalt is 0.001 mass % or more and 0.008 mass % or less; the content ratio of the indium is above 6.2 mass % and 10 mass % or less; and the content ratio of the tin is the remaining ratio.

Abstract: A package includes first package component and a second package component. The first package component includes a first electrical connector at a surface of the first package component, and a first solder region on a surface of the first electrical connector. The second package component includes a second electrical connector at a surface of the second package component, and a second solder region on a surface of the second electrical connector. A metal pin has a first end bonded to the first solder region, and a second end bonded to the second solder region.

Abstract: Vehicle diagnostic interface module comprising: a printed circuit board, an OBD connector, which is provided with a plate-like contact-carrier socket arranged parallel to and facing the printed circuit board, a plurality of rigid pins, each of them having a first segment projecting from the inner face of the socket along an axis orthogonal to the printed circuit board and inserted in a notch formed on the outer perimeter edge of the board.

Abstract: A wiring board with a built-in electronic component includes a substrate having a cavity, an interlayer insulating layer formed on the substrate such that the interlayer insulating layer is covering the cavity of the substrate, a conductor layer formed on the interlayer insulating layer, an electronic component accommodated in the cavity of the substrate and including a rectangular cuboid body and three terminal electrodes such that each of the three terminal electrodes has a metal film form formed on an outer surface of the rectangular cuboid body, and via conductors formed in the interlayer insulating layer such that the via conductors are connecting the conductor layer and the three terminal electrodes of the electronic component. The three terminal electrodes are arrayed in parallel on the outer surface of the rectangular cuboid body such that adjacent terminal electrodes have the opposite polarities.

Abstract: An element body includes a pair of principal surfaces, a pair of side surfaces, and another pair of side surfaces. Each of a pair of terminal electrodes includes a first electrode portion disposed on the principal surface and a second electrode portion disposed on the side surface. In the element body, a length in a direction in which the pair of principal surfaces oppose each other is smaller than a length in a direction in which the pair of side surfaces oppose each other and smaller than a length in a direction in which the other pair of side surfaces oppose each other. An arithmetic mean deviation of the surface of the first electrode portion is from 0.20 to 0.26 ?m. An arithmetic mean deviation of the surface of the second electrode portion is from 0.27 to 0.38 ?m.

Abstract: A semiconductor package includes terminals, each having an exposed surface that is flush with a bottom surface of the semiconductor package, and a layer of interconnection routings disposed within the semiconductor package. At least one interconnection routing is electrically coupled with a terminal and extends planarly therefrom. The semiconductor package also includes at least one die coupled with the layer of interconnection routings. In some embodiments, the semiconductor package also includes one or more additional intermediary layers. Each intermediary layer includes a via layer and an associated routing layer. The associated routing layer includes associated routings. At least one associated routing is electrically coupled with a terminal and extends planarly therefrom. Each via layer couples two routing layers. The semiconductor package also includes a locking mechanism for fastening a package compound with the interconnection routings and the terminals.

Abstract: A semiconductor package includes terminals, each having an exposed surface that is flush with a bottom surface of the semiconductor package, and a layer of interconnection routings disposed within the semiconductor package. At least one interconnection routing is electrically coupled with a terminal and extends planarly therefrom. The semiconductor package also includes at least one die coupled with the layer of interconnection routings. In some embodiments, the semiconductor package also includes one or more additional intermediary layers. Each intermediary layer includes a via layer and an associated routing layer. The associated routing layer includes associated routings. At least one associated routing is electrically coupled with a terminal and extends planarly therefrom. Each via layer couples two routing layers. The semiconductor package also includes a locking mechanism for fastening a package compound with the interconnection routings and the terminals.

Abstract: An interconnect structure in which the current capacity of an interconnect pattern involving a large amount of current is increased without preventing the miniaturization of signal lines and increasing the film thickness. The interconnect structure includes a resin layer; and interconnects formed on the resin layer, wherein the resin layer has a plurality of parallel grooves in an area in which the interconnects are formed, and the interconnects are formed of a plating film created on a resin layer front surface in the area, in which the interconnects are formed, and on inner wall surfaces of the plurality of grooves.

Abstract: A packaging structure includes a first substrate including a first metal terminal and a second metal terminal whose height is lower than the height of the first metal terminal; and a second substrate including a third metal terminal and a fourth metal terminal whose height is lower than the height of the third metal terminal, the second substrate being provided on the first substrate, the first metal terminal and the third metal terminal being directly bonded with each other, and the second metal terminal and the fourth metal terminal being bonded via a connection portion.

Abstract: A method for fabricating a semiconductor package is disclosed. A substrate is provided and a first passivation layer is formed on the substrate. Trenches are formed partially through the substrate. Metal via structures are formed in the trenches. An RDL structure is formed on the first passivation layer. A second passivation layer is formed on the RDL structure. Openings are formed in the second passivation layer to expose bump pads. First metal pillars are formed on the bump pads. Semiconductor dies are mounted onto the metal pillars. A molding compound is formed to cover the semiconductor dies. The substrate is removed, thereby exposing the first passivation layer and protrudent portions (second metal pillars) of the metal via structures. C4 bumps are formed directly on the second metal pillars, respectively.

Abstract: Electrical connection device comprising at least one substrate and one or several first electrical connection elements located on a front face of the electrical connection device such that they can be coupled to contact pads of an electronic device to which the electrical connection device is intended to be connected, each first electrical connection element comprising: at least one support, of which at least one first end is anchored to the substrate such that part of the support is suspended above the front face, the support comprising at least a portion of piezoelectric material located between two electrodes and capable of moving said part of the support in two directions approximately perpendicular to the front face depending on a value of an electrical voltage intended to be applied onto the electrodes; at least one electrical conducting element located on said part of the support.

Abstract: A packaged module for use in a wireless communication device has a substrate supporting an integrated circuit die that includes at least a microprocessor and radio frequency receiver circuitry and a stacked filter assembly configured as a filter circuit that is in communication with the radio frequency receiver circuitry. The stacked filter assembly includes a plurality of passive components, where each passive component is packaged as a surface mount device. At least one passive component is in direct communication with the substrate and at least another passive component is supported above the substrate by the at least one passive component that is in the direct communication with the substrate.

Abstract: A module containing a plurality of active capacitors and a sacrificial capacitor is provided. The active capacitors and sacrificial capacitor are aligned along a horizontal direction so that the side surfaces of their cases are parallel to each other. The particular arrangement of the active capacitors and sacrificial capacitor results in a module configuration where the anode terminations for the active capacitors and an external component of the lead frame for the sacrificial capacitor are coplanar so that the module can be mounted to a circuit board via the anode terminations and the external component of the lead frame in a mechanically and electrically stable manner. Further, the center of gravity of the module in the length and/or width directions can be located at a midpoint of the overall module length and/or width, which enhances the stability of the module when mounted to a circuit board.

Abstract: A metal conducting structure includes a first metal conducting layer, a second metal conducting layer, and a third metal conducting layer. The first metal conducting layer consists of a first polymer material and first metal particles. The first metal conducting layer is covered by the second metal conducting layer which is a structure with pores, the structure consists of second metal particles. The second metal conducting layer is covered by the third metal conducting layer. The pores of the second metal conducting layer are filled with a metal material of the third metal conducting layer.

Abstract: One or more embodiments are directed to semiconductor packages with one or more cantilever pads. In one embodiment a recess is located in a substrate of the package facing the cantilever pad. The cantilever pad includes a conductive pad on which a conductive ball is formed. The cantilever pad is configured to absorb stresses acting on the package.

Abstract: A power filter circuit is provided for use in a package substrate for integrated circuits. A first power isolation circuit, having a first inductance, is configured to isolate power provided to one or more die connectors for provision to an integrated circuit die. A second power isolation circuit, having a second inductance, is configured to isolate power provided to one or more printed circuit board (PCB) connectors for provision to a PCB. A power plane electrically connects a first end of the first power isolation circuit to a first end of the second power isolation circuit, forming a “?” power filtering structure in some embodiments. A de-coupling capacitor can be provided as a surface-mount capacitor, or as an embedded capacitor in a core layer of an integrated circuit package.

Abstract: Integrated circuits are described which directly connect a semiconductor interposer to a motherboard or printed circuit board by way of large pitch connections. A stack of semiconductor interposers may be connected directly to one another by a variety of means and connected to a printed circuit board through only a ball grid array of solder bumps. The stack of semiconductor interposers may include one or more semiconductor interposers which are shifted laterally to enable directly electrical connections to intermediate semiconductor interposers. The top semiconductor interposer may have no electrical connections on the top to increase security by making electrical “taps” much more difficult. An electrically insulating layer may be incorporated between adjacent semiconductor interposers and cavities or air gaps may also be included within one or more semiconductor interposers.

Abstract: A semiconductor device has a first semiconductor die mounted over a carrier. An interposer frame has an opening in the interposer frame and a plurality of conductive pillars formed over the interposer frame. The interposer is mounted over the carrier and first die with the conductive pillars disposed around the die. A cavity can be formed in the interposer frame to contain a portion of the first die. An encapsulant is deposited through the opening in the interposer frame over the carrier and first die. Alternatively, the encapsulant is deposited over the carrier and first die and the interposer frame is pressed against the encapsulant. Excess encapsulant exits through the opening in the interposer frame. The carrier is removed. An interconnect structure is formed over the encapsulant and first die. A second semiconductor die can be mounted over the first die or over the interposer frame.

Abstract: First and second semiconductor devices and first and second bypass circuits are mounted on a printed wiring board. The first bypass circuit and the second bypass circuit are provided closer to the first semiconductor device and to the second semiconductor device, respectively. The first bypass circuit has one end connected to a power plane through a first power supply via and the other end connected to a ground plane through a first ground via. The second bypass circuit has one end connected to the power plane through a second power supply via and the other end connected to the ground plane through a second ground via. The ground plane has a slit between the connecting portions of the first and second ground vias to increase the impedance between the connecting portions of the first and the second ground vias. Thus, jitters caused by power supply noise can be reduced.

Abstract: A semiconductor, silicon-on-oxide (SOI) structure having a silicon layer disposed on a bottom oxide (BOX) insulating layer. A deep trench isolation (DTI) material passes vertically through the silicon layer to the bottom oxide insulating layer. The deep trench isolation material has a lower permittivity than the permittivity of the silicon. A coaxial transmission line having an inner electrical conductor and an outer electrically conductive shield structure disposed around the inner electrical conductor passing vertically through the deep trench isolation material to electrically connect electrical conductors disposed over the bottom oxide insulating layer to electrical conductors disposed under the contacts bottom oxide insulating layer.

Abstract: A flexible device includes a first conductive pattern, a second conductive pattern, and a dielectric layer. The first conductive pattern includes a first sliding contact portion and a first extension portion. The second conductive pattern includes a second sliding contact portion overlapping with the first sliding contact portion and the second conductive pattern includes a second extension portion. The second sliding contact portion is in contact with the first sliding contact portion and is movable on the first sliding contact portion for a sliding motion. The first and second conductive patterns are embedded in the dielectric layer.

Abstract: Wire bonding operations can be facilitated through the use of metal nanoparticle compositions. Both ball bonding and wedge bonding processes can be enhanced in this respect. Wire bonding methods can include providing a wire payout at a first location from a rolled wire source via a dispensation head, contacting a first metal nanoparticle composition and a first portion of the wire payout with a bonding pad, and at least partially fusing metal nanoparticles in the first metal nanoparticle composition together to form an adhering interface between the bonding pad and the first portion of the wire payout. The adhering interface can have a nanoparticulate morphology. Wire bonding systems can include a rolled wire source, a dispensation head configured to provide a wire payout, and an applicator configured to place a metal nanoparticle composition upon at least a portion of the wire payout or upon a bonding pad.

Abstract: An integrated circuit includes a copper hillock-detecting structure. The copper hillock-detecting structure includes a copper metallization layer and an intermediate plate structure spaced apart from adjacent to the copper metallization layer. The intermediate plate structure includes a conducting material plate. The intermediate plate structure further includes a plurality of conductive vias that are electrically and physically connected with the conducting material plate. The copper hillock-detecting structure further includes a sensing plate adjacent to the intermediate plate and electrically and physically connected with the plurality of vias such that the vias are disposed between the intermediate plate and the sensing plate.

Abstract: A wiring board has an insulation base plate, and a plurality of electrodes provided adjacent to each other in plan view on the insulation base plate, the electrodes have an opening in the outer periphery and a slit oriented from the outer periphery to the interior, and, among two electrodes adjacent to each other, the slit in one electrode has a central line intersecting the outer periphery of the other electrode.

Abstract: An embodiment of the invention may include a method, and resulting structure, of forming a semiconductor structure. The method may include forming a component hole from a first surface to a second surface of a base layer. The method may include placing an electrical component in the component hole. The electrical component has a conductive structure on both ends of the electrical component. The electrical component is substantially parallel to the first surface. The method may include forming a laminate layer on the first surface of the base layer, the second surface of the base layer, and between the base layer and the electrical component. The method may include creating a pair of via holes, where the pair of holes align with the conductive structures on both ends of the electrical component. The method may include forming a conductive via in the pair of via holes.

Abstract: Disclosed is a BGA package with protective circuitry layouts to prevent cracks of the bottom circuit in the specific area of the substrate leading to package failure and to enhance packaging yield of BGA packages. A chip is disposed on the upper surface of the substrate. A chip projective area is defined inside the bottom surface of the substrate and is established by vertically projecting the edges of the chip on the upper surface to the bottom surface of the substrate. At least an external contact pad vulnerable to thermal stress is located within the chip projective area. A protective area and a wiring area are respectively defined in the chip projective area at two opposing sides of the external contact pad. A plurality of protective mini-pads are arranged in a dotted-line layout and disposed in the projective area to partially surround the external contact pad to avoid thermal stress concentrated on the protective area and to further prevent circuitry cracks in the package structure.

Abstract: A chip part according to the present invention includes a substrate having a penetrating hole, a pair of electrodes formed on a front surface of the substrate and including one electrode overlapping the penetrating hole in a plan view and another electrode facing the one electrode, and an element formed on the front surface side of the substrate and electrically connected to the pair of electrodes.

Abstract: A preparation method of a thin power device comprising the steps of steps S1, S2 and S3. In step S1, a substrate is provided. The substrate comprises a first set of first contact pads and a second set of second contact pads arranged at a front surface and a back surface of the substrate respectively. Each first contact pad of the first set of contact pads is electrically connected with a respective second contact pad of the second set of contact pads via a respective interconnecting structure formed inside the substrate. A through opening is formed in the substrate aligning with a third contact pad attached to the back surface of the substrate. The third contact pad is not electrically connected with the first set of contact pads. In step S2, a semiconductor chip is embedded into the through opening. A back metal layer at a back surface of the semiconductor chip is attached to the third contact pad.

Abstract: A MEMS component includes, on a substrate, component structures, contact areas connected to the component structures, metallic column structures seated on the contact areas, and metallic frame structures surrounding the component structures. A cured resist layer is seated on frame structure and column structures such that a cavity is enclosed between substrate, frame structure and resist layer. A structured metallization is provided directly on the resist layer or on a carrier layer seated on the resist layer. The structured metallization includes at least external contacts of the component and being electrically conductively connected both to metallic structures and to the contact areas of the component structures.

Abstract: A wiring substrate includes a first wiring layer, a first insulation layer, and a second wiring layer. The first insulation layer covers an upper surface and a side surface of the first wiring layer and exposes a lower surface of the first wiring layer. The second wiring layer is stacked on at least one of a lower surface of the first insulation layer and the lower surface of the first wiring layer.

Abstract: A multilayer ceramic capacitor connected to an output electrode and an input electrode of a mounting substrate includes a laminated body. In the laminating direction of the laminated body, the shortest distance from an outer first internal electrode to the surface of an external electrode on the side closer to a first principal surface, and the shortest distance from an outer second internal electrode to the surface of an external electrode on the side closer to a second principal surface are each about 40 ?m or less. In the width direction of the laminated body, the shortest distance from an end of an internal electrode to the surface of the external electrode on the side closer to a first side surface, and the shortest distance from an end of an internal electrode to the surface of the external electrode on the side closer to a second side surface are each about 40 ?m or less.

Abstract: Heat spreading substrate with embedded interconnects. In an embodiment in accordance with the present invention, an apparatus includes a metal parallelepiped comprising a plurality of wires inside the metal parallelepiped. The plurality of wires have a different grain structure than the metal parallelepiped. The plurality of wires are electrically isolated from the metal parallelepiped. The plurality of wires may be electrically isolated from one another.

Abstract: A circuit board assembly may include a circuit board, a first electrical terminal, and a layer of solder paste. The circuit board may include a minimum thickness, a first side, and a second side opposite the first side. The first electrical terminal may include a solder tab. The layer of solder paste may be disposed on the first side of the circuit board. The solder tab of the first electrical terminal may extend into the first side of the circuit board but not beyond the second side of the circuit board.

Abstract: A semiconductor module can comprise a fully molded base portion comprising a planar surface that further comprises a semiconductor die comprising contact pads, conductive pillars coupled to the contact pads and extending to the planar surface, and an encapsulant material disposed over the active surface, four side surfaces, and around the conductive pillars, wherein ends of the conductive pillars are exposed from the encapsulant material at the planar surface of the fully molded base portion. A build-up interconnect structure comprising a routing layer can be disposed over the fully molded base portion. A photo-imageable solder mask material can be disposed over the routing layer and comprise openings to form surface mount device (SMD) land pads electrically coupled to the semiconductor die and the conductive pillars. A SMD component can be electrically coupled to the SMD land pads with surface mount technology (SMT).

Abstract: In one embodiment, a method of fabricating a semiconductor package includes forming a first plurality of die openings on a laminate substrate. The laminate substrate has a front side and an opposite back side. A plurality of first dies is placed within the first plurality of die openings. An integrated spacer is formed around each die of the plurality of first dies. The integrated spacer is disposed in gaps between the laminate substrate and an outer sidewall of each die of the plurality of first dies. The integrated spacer holds the die within the laminate substrate by partially extending over a portion of a top surface of each die of the plurality of first dies. Front side contacts are formed over the front side of the laminate substrate.

Abstract: A protection device for protecting an electronic device includes a current sensing module, for detecting a current flowing through a power supply path of the electronic device to generate a current signal; a processing device, coupled to the current sensing module, for receiving the current signal to determine whether the current corresponding to the current signal is greater than a first threshold value and outputting a control signal accordingly; a first switch, disposed on the power supply path, for controlling the power supply path to be switched on or off according to an input voltage of the power supply path; and a first control module, coupled to the processing device and the first switch, for controlling the first switch to be turned on or off according to the control signal outputted by the processing device, in order to control the power supply path to be switched on or off.

Abstract: A wiring substrate includes a first substrate and an electronic component mounted on an upper surface of the first substrate. A first pad is formed on an uppermost wiring layer of the first substrate. A connection terminal is formed on the electronic component and is located proximate to the first pad in a plan view. The wiring substrate further includes a connection member formed on the first pad to electrically connect the first pad and the connection terminal. The connection member includes a rod-shaped core and a solder layer, which is coated around the core and joined to the first pad. The solder layer includes a bulge that spreads from the core of the connection member in a planar direction. The bulge is joined to the connection terminal of the electronic component.

Abstract: A semiconductor integrated circuit chip, in which multi-core processors are integrated, is usually mounted over an organic wiring board by FC bonding to form a BGA package by being integrated with the substrate. In such a structure, power consumption is increased, and hence the power supplied only from a peripheral portion of the chip is insufficient, so that a power supply pad is also provided in the chip central portion. However, because of an increase in the wiring associated with the integration of a plurality of CPU cores, etc., there occurs a portion between the peripheral portion and the central portion of the chip, where a power supply pad cannot be arranged. According to the outline of the present application, in a semiconductor integrated circuit device such as a BGA, etc.

Abstract: A capacitive sensor structure includes: a substrate; a multilayer wire structure, disposed on the substrate to form a passive sensing circuit; and a semiconductor chip, formed thereon a control circuit, fixedly mounted on a surface of the substrate and electrically connected to the multilayer wire structure.

Abstract: Disclosed is a printed circuit board. The printed circuit board includes an insulating layer, a copper foil formed on the insulating layer and formed therein with a groove to expose a portion of a top surface of the insulating layer, and a thermal conductive layer filled in the groove.

Abstract: Some embodiments include apparatus and methods using a package substrate and a die coupled to the package substrate. The package substrate includes conductive contacts, conductive paths coupled to the conductive contacts, and a resistor embedded in the package substrate. The die includes buffer circuits and a calibration module coupled to the buffer circuits and the resistor. The buffer circuits include output nodes coupled to the conductive contacts through the conductive paths. The calibration module is configured to perform a calibration operation to adjust resistances of the buffer circuits based on a value of a voltage at a terminal of the resistor during the calibration operation.

Abstract: A mounting substrate includes a through-hole 13 formed in a substrate 10, a first land part 21, a second land part 31, a first component attaching part 22, a second component attaching part 32, a conductive layer 14, and a filling member 15 filled into a part of the through-hole 13. A shortest distance allowable value L0 from the center of the first land part 21 to a component 51 is determined on the basis of the volume Vh of a part of the through-hole 15 positioned above a top surface of the filling member 15 on the side of the first land part 21, the length L1 of the component 51 to be mounted to the first component attaching part 22, and the maximum allowable value of the inclination of the component 51 to be mounted to the first component attaching part 22 relative to the first surface 11 of the substrate 10.

Abstract: Reliability of a semiconductor device is improved. A power device includes: a semiconductor chip; a chip mounting part; a solder material electrically coupling a back surface electrode of the semiconductor chip with an upper surface of the chip mounting part; a plurality of inner lead parts and a plurality of outer lead parts electrically coupled with an electrode pad of the semiconductor chip through wires; and a sealing body for sealing the semiconductor chip and the wires. Further, a recess is formed in a peripheral region of the back surface of the semiconductor chip. The recess has a first surface extending to join the back surface and a second surface extending to join the first surface. Also, a metal film is formed over the first surface and the second surface of the recess.

Abstract: The present invention discloses a high density film for IC package. The process comprises: a redistribution layer is fabricated following IC design rule, with a plurality of bottom pad formed on bottom, and with a plurality of first top pad formed on top; wherein the density of the plurality of bottom pad is higher than the density of the plurality of first top pad; and a top redistribution layer is fabricated following PCB design rule, using the plurality of the first top pad as a starting point; with a plurality of second top pad formed on top; wherein a density of the plurality of first top pad is higher than a density of the plurality of second top pad.

Abstract: A wiring substrate comprises an insulating substrate and an external electrode on the insulating substrate. The insulating substrate comprises a lateral surface comprising a cutout. The cutout extends to a lower surface of the insulating substrate. The external electrode extends from an inner surface of the cutout to the lower surface of the insulating substrate. The insulating substrate comprises a protrusion at a lower end portion of the inner surface of the cutout. The protrusion protrudes from the inner surface of the cutout toward the lateral surface of the insulating substrate.

Abstract: A multilayer ceramic capacitor is configured such that “a” is a distance in a height direction between an effective portion and a first principal surface; “b” is a distance in a length direction between a first end surface and the effective portion in the length direction; “c” is a thickness of the thickest portion of a first base layer provided over the first principal surface; “d” is a distance in the length direction between the thickest portion of the first base layer provided over the first end surface and a portion of the first base layer located over the first principal surface and closest to a second end surface; and “e” is a maximum thickness of a portion of the first base layer provided over the first end surface; and f: the height of the ceramic body, and 2?(c·d+e·f/2)/(a·b)?6 is satisfied.

Abstract: A multilayer printed circuit board is provided having a first dielectric layer and a first plating resist selectively positioned in the first dielectric layer. A second plating resist may be selectively positioned in the first dielectric layer or a second dielectric layer, the second plating resist separate from the first plating resist. A through hole extends through the first dielectric layer, the first plating resist, and the second plating resist. An interior surface of the through hole is plated with a conductive material except along a length between the first plating resist and the second plating resist. This forms a partitioned plated through hole having a first via segment electrically isolated from a second via segment.

Abstract: An embedded die package comprising a die having die contract pads in a passivation layer, the die contact pads being coupled to a first side of a feature layer by an adhesive layer, a layer of pillars extending from a second side of the feature layer, the die, feature layer and the layer of pillars being encapsulated by a dielectric material.

Abstract: Methods for producing System-in-Packages (SiPs) containing embedded Surface Mount Device (SMD) modules are provided, as SiPs containing SMD modules. In one embodiment, the fabrication method includes positioning a semiconductor die and first preassembled SMD module, which contains a plurality of SMDs soldered to an interposer substrate, in predetermined spatial relationship. The preassembled SMD module and the semiconductor die are overmolded to yield a molded panel having a frontside at which the first preassembled SMD module and the semiconductor die are exposed. A Redistribution Layer (RDL) structure can be formed over the frontside of the molded panel containing interconnect lines electrically coupling the semiconductor die and the first preassembled SMD module. The molded panel may then undergo singulation to produce an SiP having a molded body in which the semiconductor die and the first preassembled SMD module are embedded.

Abstract: An integrated circuit device includes a first substrate having a ground plane. The integrated circuit device also includes a second substrate. The second substrate has a first layer of passive devices. The passive devices include at least one inductor on a first side of the second substrate. The first layer of passive devices is substantially orthogonal to the ground plane and the second substrate supported by the first substrate. An inductor magnetic field is substantially parallel to the ground plane.