Abstract: A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target.

Abstract: Disclosed are apparatus and method embodiments for achieving etch and/or deposition selectivity in vias and trenches of a semiconductor wafer. That is, deposition coverage in the bottom of each via of a semiconductor wafer differs from the coverage in the bottom of each trench of such wafer. The selectivity may be configured so as to result in punch through in each via without damaging the dielectric material at the bottom of each trench or the like. In this configuration, the coverage amount deposited in each trench is greater than the coverage amount deposited in each via.

Abstract: The embodiments of the embodiments of the Nanostructure Lithium Ion Battery are comprised of a multi-layer coaxial assembly formed over a cylindrical core. The multilayers are each comprised of sublayers in order as follows: a copper sublayer with nano “chicken wire” embedded in the copper sublayer for current collection, a nanostructured aluminum substrate sublayer, a nanostructured cathode sublayer, an electrolyte sublayer, a nanostructured anode sublayer, and a copper interlayer sublayer. The nanobatteries are arranged in layered stacks of nanocells. The nanocells stacks are comprised of a plurality of individual octagonal shaped multilayer nanocells. Each nanocell stack is electrically connected to an array of other nanocells stacks via electrode contacts. A lower copper bus serves as the anode current collector and an upper copper bus serves as the cathode current collector. Pass-throughs connect to the appropriate cathode layers in the multilayer nanocell stacks.

Abstract: The sputtering apparatus has: a vacuum chamber in which a substrate is disposed; a cathode unit which is disposed inside the vacuum chamber so as to lie opposite to the substrate. The cathode unit has mounted a bottomed cylindrical target material from a bottom side thereof into at least one recessed portion formed in one surface of a holder, and has assembled therein a magnetic field generator for generating a magnetic field in an inside space of the target material.

Abstract: Method and apparatus for sputter depositing silver selenide and controlling defect formation in and on a sputter deposited silver selenide film are provided. A method of forming deposited silver selenide comprising both alpha and beta phases is further provided. The methods include depositing silver selenide using sputter powers of less than about 200 W, using sputter power densities of less than about 1 W/cm2, using sputter pressures of less than about 40 mTorr and preferably less than about 10 mTorr, using sputter gasses with molecular weight greater than that of neon, using cooling apparatus having a coolant flow rate at least greater than 2.5 gallons per minute and a coolant temperature less than about 25° C., using a magnetron sputtering system having a magnetron placed a sufficient distance from a silver selenide sputter target so as to maintain a sputter target temperature of less than about 350° C. and preferably below about 250° C.

Abstract: A negative electrode active material for a secondary battery contains an aluminum alloy. The internal structure of the aluminum alloy has a crystalline aluminum phase in a magnesium-supersaturated solid solution state, and an amorphous aluminum phase. The amorphous aluminum phase is dispersed in the crystalline aluminum phase in the magnesium-supersaturated solid solution state. Each of these phases has a columnar shape. The magnesium content of the aluminum alloy preferably is greater than 22 at % and less than 35 at %, and more preferably, lies within a range of 25±2 at %.

Abstract: A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10 ?cm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed.

Abstract: A method for forming titanium nitride by PVD is disclosed, comprising: generating ions of a noble gas by glow discharge under a vacuum condition that a nitrogen gas and the noble gas are supplied; nitriding a surface of a wafer and a surface of a titanium target with the nitrogen gas; bombarding the surface of the titanium target with the ions of the noble gas after they are accelerated in an electric field so that titanium ions and titanium nitride are sputtered; and forming a titanium nitride layer by depositing titanium nitride on the surface of the wafer in a magnetic field, while titanium ions are injected into the surface of the wafer so that stress is introduced into the titanium nitride layer, wherein non-crystallization fraction of the titanium nitride layer and stress in the titanium nitride layer are increased by increasing kinetic energy of titanium ions which are injected into the surface of the wafer.

Abstract: The subject invention provides conductive stripes, suitable for use as electrodes, and methods of making conductive stripes.

Abstract: The present method of forming an electronic structure includes providing a tantalum base layer and depositing a layer of copper on the tantalum layer, the deposition being undertaken by physical vapor deposition with the temperature of the base layer at 50° C. or less, with the deposition taking place at a power level of 300 W or less.

Abstract: There is provided a fuel cell cathode electrode, comprising a porous skeletal medium, the surface of which medium is modified or otherwise arranged or constructed to induce enhanced activated behaviour, wherein the enhanced activated behaviour is induced by means of increasing the surface area for a given volume of the electrode and/or by increasing the number and/or availability of reactive sites on the electrode. A fuel cell having such a cathode electrode, a method of manufacturing such a cathode electrode, and use of such a cathode electrode in a fuel cell is also disclosed.

Abstract: A method for using a vacuum apparatus that includes a vacuum chamber and a pump, the vacuum chamber housing an object, the pump reducing an internal pressure of the vacuum chamber, the method including: ventilating inside the vacuum chamber by introducing a gas into the vacuum chamber and discharging the gas from the vacuum chamber by causing the pump to reduce the internal pressure of the vacuum chamber. In the ventilating, a discharge rate at which molecules of the gas per unit volume are discharged is at least 3.3×10?5 mol/(s·L), and the temperature in the vacuum chamber is at least 15° C. and at most 80° C.

Abstract: In one or more embodiments, an electrochemical device includes a catalyst promoter including an amorphous metal oxide, the amorphous metal oxide being of an amount greater than 50 percent by weight of the total weight of the substrate, and a substrate including graphene and supporting the substrate.

Abstract: A method of depositing lithium metal oxide on a battery substrate in a sputtering chamber comprising a substrate support, first and second sputtering targets each comprising lithium metal oxide, and first and second electrodes about the backside surfaces of the first and second sputtering targets respectively. In the method, a substrate is placed on the substrate support, sputtering gas maintained at a pressure and energized by applying an alternating voltage of AC power to the first and second electrodes so that each electrode is alternately either an anode or a cathode. The alternating voltage can be applied within a frequency range while also applying a time varying magnetic field about each of the surfaces of the first and second targets.

Abstract: A reactive evaporation method for forming a group III-V amorphous material attached to a substrate includes subjecting the substrate to an ambient pressure of no greater than 0.01 Pa, and introducing active group-V matter to the surface of the substrate at a working pressure of between 0.05 Pa and 2.5 Pa, and group III metal vapor, until an amorphous group III-V material layer is formed on the surface.

Abstract: A vacuum encapsulated, hermetically sealed cathode capsule for generating an electron beam of secondary electrons, which generally includes a cathode element having a primary emission surface adapted to emit primary electrons, an annular insulating spacer, a diamond window element comprising a diamond material and having a secondary emission surface adapted to emit secondary electrons in response to primary electrons impinging on the diamond window element, a first cold-weld ring disposed between the cathode element and the annular insulating spacer and a second cold-weld ring disposed between the annular insulating spacer and the diamond window element. The cathode capsule is formed by a vacuum cold-weld process such that the first cold-weld ring forms a hermetical seal between the cathode element and the annular insulating spacer and the second cold-weld ring forms a hermetical seal between the annular spacer and the diamond window element whereby a vacuum encapsulated chamber is formed within the capsule.

Abstract: In accordance with the present invention, deposition of LiCoO2 layers in a pulsed-dc physical vapor deposition process is presented. Such a deposition can provide a low-temperature, high deposition rate deposition of a crystalline layer of LiCoO2 with a desired <101> or <003> orientation. Some embodiments of the deposition address the need for high rate deposition of LiCoO2 films, which can be utilized as the cathode layer in a solid state rechargeable Li battery. Embodiments of the process according to the present invention can eliminate the high temperature (>700° C.) anneal step that is conventionally needed to crystallize the LiCoO2 layer.

Abstract: A magnetron sputter reactor (410) and its method of use, in which SIP sputtering and ICP sputtering are promoted is disclosed. In another chamber (412) an array of auxiliary magnets positioned along sidewalls (414) of a magnetron sputter reactor on a side towards the wafer from the target is disclosed. The magnetron (436) preferably is a small one having a stronger outer pole (442) of a first polarity surrounding a weaker inner pole (440) of a second polarity all on a yoke (444) and rotates about the axis (438) of the chamber using rotation means (446, 448, 450). The auxiliary magnets (462) preferably have the first polarity to draw the unbalanced magnetic field (460) towards the wafer (424), which is on a pedestal (422) supplied with power (454). Argon (426) is supplied through a valve (428). The target (416) is supplied with power (434).

Abstract: The present invention provides a method for preparing an ion optical device. A substrate is fabricated with a hard material adapted for a grinding process, the substrate at least including a planar surface, and including at least one insulating material layer. Next, one or more linear grooves are cut on the planar surface, to form multiple discrete ion optical electrode regions on the planar surface separated by the linear grooves. Then, conductive leads are fabricated on other substrate surfaces than the planar surface and in a through hole inside the substrate, to provide voltages required on ion optical electrodes. By using high-hardness materials in cooperation with high-precision machining, higher precision and a desired discrete electrode contour can be obtained.

Abstract: In the present invention, in forming a LaB6 thin film by magnetron sputtering, the single-crystal properties in the wide domain direction in the obtained LaB6 thin film are improved. In one embodiment of the present invention, in a magnetron sputtering apparatus, parallel magnetic field strength on a surface of the substrate is set to 0.1 times or less parallel magnetic field strength on a surface of the target.

Abstract: A method for using an integrated battery and device structure includes using two or more stacked electrochemical cells integrated with each other formed overlying a surface of a substrate. The two or more stacked electrochemical cells include related two or more different electrochemistries with one or more devices formed using one or more sequential deposition processes. The one or more devices are integrated with the two or more stacked electrochemical cells to form the integrated battery and device structure as a unified structure overlying the surface of the substrate. The one or more stacked electrochemical cells and the one or more devices are integrated as the unified structure using the one or more sequential deposition processes. The integrated battery and device structure is configured such that the two or more stacked electrochemical cells and one or more devices are in electrical, chemical, and thermal conduction with each other.

Abstract: In accordance with the present invention, deposition of LiCoO2 layers in a pulsed-dc physical vapor deposition process is presented. Such a deposition can provide a low-temperature, high deposition rate deposition of a crystalline layer of LiCoO2 with a desired <101> or <003> orientation. Some embodiments of the deposition address the need for high rate deposition of LiCoO2 films, which can be utilized as the cathode layer in a solid state rechargeable Li battery. Embodiments of the process according to the present invention can eliminate the high temperature (>700° C.) anneal step that is conventionally needed to crystallize the LiCoO2 layer.

Abstract: Provided is a method of manufacturing a lithium battery. The method of manufacturing the lithium battery includes providing a anode part including a anode collector, a anode layer, and a anode electrolyte layer which are successively stacked on a first pouch film, providing a cathode part including a cathode collector, a cathode layer, and a cathode electrolyte layer which are successively stacked on a second pouch film, and sealing the first and second pouch films to couple the anode part to the cathode part.

Abstract: A method for making nickel silicide nano-wire, the method includes the following steps. Firstly, a silicon substrate and a growing device, and the growing device including a reacting room are provided. Secondly, a silicon dioxide layer is formed on a surface of the silicon substrate. Thirdly, a titanium layer is formed on the silicon dioxide layer. Fourthly, the silicon substrate is placed into the reacting room, and the reacting room is heated to a temperature of 500˜1000° C. Finally, a plurality of nickel cluster is formed onto the surface of the silicon substrate.

Abstract: A method for manufacturing a flexible circuit electrode array adapted to electrically communicate with organic tissue including the following steps: a) providing a flexible polymer base layer; b) curing the base layer; c) depositing a metal layer on base layer; d) patterning the metal layer and forming metal traces on the base layer; e) roughening the surface of the base layer; f) chemically reverting the cure of the surface of the base layer; g) depositing a flexible polymer top layer on the surface of the base layer and the metal traces; h) curing the top layer and the surface of the base layer forming one single flexible polymer layer; and i) creating openings through the single layer to the metal trace layer.

Abstract: An arrangement of elongated nanowires that include titanium silicide or tungsten silicide may be grown on the exterior surfaces of many individual electrically conductive microfibers of much larger diameter. Each of the nanowires is structurally defined by an elongated, centralized titanium silicide or tungsten silicide nanocore that terminates in a distally spaced gold particle and which is co-axially surrounded by a removable amorphous nanoshell. A gold-directed catalytic growth mechanism initiated during a low pressure chemical vapor deposition process is used to grow the nanowires uniformly along the entire length and circumference of the electrically conductive microfibers where growth is intended. The titanium silicide- or tungsten silicide-based nanowires can be used in a variety electrical, electrochemical, and semiconductor applications.

Abstract: Disclosed is a method of preparing a positive active material for a lithium battery. The method comprises: depositing a positive active material on an electrode on a substrate (1); and putting metal chips on a metal oxides target and performing a sputtering process, thereby depositing mixed metal-oxides on the positive active material (2). In another aspect, the method comprises: preparing an electrode active material; preparing a precursor solution including the electrode active material; and printing the precursor solution on the substrate, and evaporating a solvent at a temperature of 80-120° C.

Abstract: A method of fabricating a layer of a thin film battery comprises providing a sputtering target and depositing the layer on a substrate using a physical vapor deposition process enhanced by a combination of plasma processes. The deposition process may include: (1) generation of a plasma between the target and the substrate; (2) sputtering the target; (3) supplying microwave energy to the plasma; and (4) applying radio frequency power to the substrate. A sputtering target for a thin film battery cathode layer has an average composition of LiMaNbZc, wherein 0.20>{b/(a+b)}>0 and the ratio of a to c is approximately equal to the stoichiometric ratio of a desired crystalline structure of the cathode layer, N is an alkaline earth element, M is selected from the group consisting of Co, Mn, Al, Ni and V, and Z is selected from the group consisting of (PO4), O, F and N.

Abstract: Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer. The interfacial region contains an ion conducting electronically insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices.

Abstract: A method for forming a metallic nitride film includes the steps of a) providing a target made of titanium or zirconium and a substrate in a vacuum chamber, and b) forming a metallic film, which is a TiN film or a ZrN film, on a surface of the substrate by sputtering deposition under the conditions of maintaining a working pressure of the vacuum chamber in a range of 5×10?4 Torr to 5×10?2 Torr; introducing a gas mixture of air and argon into the vacuum chamber at a flow rate ratio of the air to the argon ranging from 5:100 to 15:100, and applying a direct current power ranging from 100 Watts to 5000 Watts by a power supply. Because air can be conveniently collected and the requirement of the base pressure is lower than that of a prior art method, the method of the present invention has the advantages of simple equipment requirement, time-effective manufacturing processes and low cost.

Abstract: An electrical conductive member (20) includes a metal substrate (21), an intermediate layer (23) formed on the metal substrate (21), and an electrical conductive layer (25) formed on the intermediate layer (23). The intermediate layer (23) contains a constituent of the metal substrate (21), a constituent of the electrical conductive layer (25), and a crystallization inhibiting component that inhibits crystallization in the intermediate layer (23). According to this configuration, the electrical conductive member having excellent electrical conductivity and resistance to corrosion can be obtained.

Abstract: A plasma sputtering method for metal chalcogenides, such as germanium antimony telluride (GST), useful in forming phase-change memories. The substrate is held at a selected temperature at which the material deposits in either an amorphous or crystalline form. GST has a low-temperature amorphous range and a high-temperature crystalline range separated by a transition band of 105-120° C. Bipolar pulsed sputtering with less than 50% positive pulses of less than 10:s pulse width cleans the target while maintain the sputtering plasma. The temperature of chamber shields is maintained at a temperature favoring crystalline deposition or they may be coated with arc-spray aluminum or with crystallographically aligned copper or aluminum.

Abstract: An enhanced sputtered film processing system and associated method comprises one or more sputter deposition sources each having a sputtering target surface and one or more side shields extending therefrom, to increase the relative collimation of the sputter deposited material, such as about the periphery of the sputtering target surface, toward workpiece substrates. One or more substrates are provided, wherein the substrates have a front surface and an opposing back surface, and may have one or more previously applied layers, such as an adhesion or release layer. The substrates and the deposition targets are controllably moved with respect to each other. The relatively collimated portion of the material sputtered from the sputtering target surface travels beyond the side shields and is deposited on the front surface of the substrates.

Abstract: An electrochromic device comprising a counter electrode layer comprised of lithium metal oxide which provides a high transmission in the fully intercalated state and which is capable of long-term stability, is disclosed. Methods of making an electrochromic device comprising such a counter electrode are also disclosed.

Abstract: A method of magnetically enhanced sputtering an electrically-conductive material onto interior surfaces of a trench described herein includes providing a magnetic field adjacent to a target formed at least in part from the electrically-conductive material, and applying a DC voltage between an anode and the target as a plurality of pulses. A high-frequency signal is applied to the pedestal supporting the semiconductor substrate to generate a self-bias field adjacent to the semiconductor substrate. The high-frequency signal is applied to the pedestal in pulses, during periods of time that overlap with the periods during which the DC voltage pulses are applied. The periods of time that the high-frequency signals are applied include a duration that extends beyond termination of the DC voltage pulse applied between the anode and the target. During each DC voltage pulse the electrically-conductive material is sputter deposited onto the side walls of the trench formed in the semiconductor substrate.

Abstract: The electric power generation efficiency of a photoelectric conversion device is improved by reducing an absorption loss of light at a back-surface electrode layer. The photoelectric conversion device includes photoelectric conversion units that convert light into electricity, a first zinc oxide layer (40a) formed on the photoelectric conversion units, a second zinc oxide layer (40b) which is formed on the first zinc oxide layer (40a) and to which aluminum and silicon are added, and a reflective metal layer (40c) formed on the second zinc oxide layer (40b).

Abstract: Sputtering in a physical vapor deposition (PVD) chamber may, in one embodiment, utilize a target laterally offset from and tilted with respect to the substrate. In another aspect, target power may be reduced to enhance film protection. In yet another aspect, magnetron magnets may be relatively strong and well balanced to enhance film protection. In another aspect, a shutter may be provided to protect the substrate in start up conditions. Other embodiments are described and claimed.

Abstract: Sputtering in a physical vapor deposition (PVD) chamber may, in one embodiment, utilize a target laterally offset from and tilted with respect to the substrate. In another aspect, target power may be reduced to enhance film protection. In yet another aspect, magnetron magnets may be relatively strong and well balanced to enhance film protection. In another aspect, a shutter may be provided to protect the substrate in start up conditions. Other embodiments are described and claimed.

Abstract: A method of depositing an amorphous layer of AlON includes providing an aluminum sputter target in a chamber, exposing the target and chamber to O2 to saturate the exposed surfaces with oxygen, introducing a substrate into the chamber in an atmosphere containing at least nitrogen and oxygen, and sputtering the target in the nitrogen and oxygen atmosphere to deposit an amorphous AlON film.

Abstract: Local plasma density, e.g., the plasma density in the vicinity of the substrate, is increased by providing an ion extractor configured to transfer ions and electrons from a first region of magnetically confined plasma (typically a region of higher density plasma) to a second region of plasma (typically a region of lower density plasma). The second region of plasma is preferably also magnetically shaped or confined and resides between the first region of plasma and the substrate. A positively biased conductive member positioned proximate the second region of plasma serves as an ion extractor. A positive bias of about 50-300 V is applied to the ion extractor causing electrons and subsequently ions to be transferred from the first region of plasma to the vicinity of the substrate, thereby forming higher density plasma. Provided methods and apparatus are used for deposition and resputtering.

Abstract: The present invention provides a gas diffusion electrode in which flooding therein is suppressed. The gas diffusion electrode includes: a membrane formed of conductive fibers; a layer formed of conductive fine particles existing while coming into contact with one of surfaces of the membrane; and a catalyst, in which the membrane formed of the conductive fibers includes a region carrying the catalyst and a region free from carrying the catalyst, the region carrying the catalyst including a surface of the membrane formed of the conductive fibers on an opposite side of a surface of the membrane formed of the conductive fibers, which is brought into contact with the layer formed of the conductive fine particles. The catalyst can be formed by a reactive sputtering method.

Abstract: A physical vapor deposition (PVD) system and method includes a chamber including a target and a pedestal supporting a substrate. A target bias device supplies DC power to the target during etching of the substrate. The DC power is greater than or equal to 8 kW. A magnetic field generating device, including electromagnetic coils and/or permanent magnets, creates a magnetic field in a chamber of the PVD system during etching of the substrate. A radio frequency (RF) bias device supplies an RF bias to the pedestal during etching of the substrate. The RF bias is less than or equal to 120V at a predetermined frequency. A magnetic field produced in the target is at least 100 Gauss inside of the target.

Abstract: A method of dispersing a metal or metal oxide within a CNT or CNT array, comprising exposing the CNT or CNT array to a solution containing a metal compound in a non-aqueous liquid; and removing the non-aqueous liquid from the CNT or CNT array. Nanoparticles were homogenously deposited within millimeter-long carbon nanotube array (CNTA). After modified with nanoparticles, CNTA changes from hydrophobic to hydrophilic. The hydrophilic composite electrodes present ideal capacitive behavior with high reversibility. The novel, nano-architectured composite demonstrates strong promise for high-performance thick and compact electrochemical supercapacitors.

Abstract: The present invention provides the technology for burying metal even in a fine concave portion such as trench and via. According to an embodiment of the present invention, a vapor of the metal as the objective material, a gas containing halogen for etching the metal, and a metal halide vapor made up of the metal element and the halogen element are supplied to the substrate, which thus forms a metal halide layer in the concave portion, and thereby deposits the metal under the metal halide layer. The procedure can achieve the above object.

Abstract: A method for making nickel silicide nano-wire, the method includes the following steps. Firstly, providing a silicon substrate and a growing device, and the growing device including a reacting room. Secondly, forming a silicon dioxide layer on a surface of the silicon substrate. Thirdly, forming a titanium layer on the silicon dioxide layer. Fourthly, placing the silicon substrate into the reacting room, and heating the reacting room to a temperature of 500˜1000° C. Finally, forming a plurality of nickel cluster onto the surface of the silicon substrate.

Abstract: A method induces plasma vapor deposition of metal into a recess in a workpiece. The method achieves re-sputtering of the metal at the base of the recess with a sputter gas by utilizing a mixture of Ar and He and/or Ne as the sputter gas with a ratio of He and/or Ne:Ar of at least about 10:1.

Abstract: Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer on a substrate at a sputtering temperature from about 10° C. to about 100° C. A cap layer including cadmium sulfide can be deposited directly on the transparent conductive oxide layer. The transparent conductive oxide layer can be annealed at an anneal temperature from about 450° C. to about 650° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device. An intermediate substrate is also generally provided for use to manufacture a thin film photovoltaic device.

Abstract: In a layout method of a bridging electrode, the method includes the steps of: providing a substrate; forming a transparent electro-conductive layer on the substrate and the transparent electro-conductive layer having a plurality of neighboring patterned blocks; forming an alignment film layer on the substrate and the alignment film layer having a plurality of bridging grooves of a bridging insulation unit crossing between the patterned blocks; forming an electro-conductive layer on the substrate and the electro-conductive layer having a plurality of wires respectively disposed on the bridging grooves, wherein the wires of the electro-conductive layer being formed through an optical compensation mask in conjunction with at least one of over-exposure and over-development; and forming a protection layer on the substrate to enhance optical transmission and to protect the substrate, the transparent electro-conductive layer, the alignment film layer and the electro-conductive layer.

Abstract: A novel board for printed wiring comprising a fine conductor wiring having a clear and favorable boundary line and fabricated by an ordinal printing method such as screen printing, a printed wiring board using the same, and methods for manufacturing them. A board for printed wiring and a method for manufacturing the same are characterized in that the surface of a board is subjected to one of the surface treatments: (a) roughening, (2) plasma treatment, (3) roughening and then plasma treatment, and (4) roughening and then forming of a metal film coating by sputtering. A printed wiring board and a method for manufacturing the same is characterize in that a conductor wiring is fabricated by printing using a conductive paste containing metal particles the average particle diameter of which is 4 ?m or less and the maximum particle diameter of which is 15 ?m or less.

Abstract: A micromachined sensor for measuring vascular parameters, such as fluid shear stress, includes a substrate having a front-side surface, and a backside surface opposite the front-side surface. The sensor includes a diaphragm overlying a cavity etched within the substrate, and a heat sensing element disposed on the front-side surface of the substrate and on top of the cavity and the diaphragm. The heat sensing element is electrically couplable to electrode leads formed on the backside surface of the substrate. The sensor includes an electronic system connected to the backside surface and configured to measure a change in heat convection from the sensing element to surrounding fluid when the sensing element is heated by applying an electric current thereto, and further configured to derive from the change in heat convection vascular parameters such as the shear stress of fluid flowing past the sensing element.