Abstract: A method of depositing a dielectric thin film may include: depositing a thin layer of dielectric; stopping deposition of the dielectric layer, and modifying the gas in the chamber if desired; inducing and maintaining a plasma in the vicinity of the substrate to provide ion bombardment of the deposited layer of dielectric; and repeating the depositing, stopping and inducing and maintaining steps until a desired thickness of dielectric is deposited. A variation on this method may include, in place of the repeating step: depositing a thick layer of lower quality dielectric; depositing a thin layer of high quality dielectric; stopping deposition of the dielectric layer, and modifying the gas in the chamber if desired; and inducing and maintaining a plasma in the vicinity of the substrate to provide ion bombardment of the deposited layer of dielectric. The thick layer of dielectric may be deposited more rapidly than the thin layers.

Abstract: In a method for forming a metal fluoride film, a metal fluoride film is formed on a substrate by sputtering using a metal target and a mixed gas containing O2 gas and a reactive gas being a fluorocarbon gas.

Abstract: There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

Abstract: One oxide film of the present invention is a film of an oxide (which can contain incidental impurities) containing one transition element selected from the group consisting of niobium (Nb) and tantalum (Ta) and copper (Cu). The oxide film is an aggregate of microcrystals, an amorphous form including microcrystals or an amorphous form, which shows no clear diffraction peak in an XRD analysis and has p-type conductivity as shown in the chart of FIG. 5 showing the results of XRD (X-ray diffraction) analyses of a first oxide film and a second oxide film. According to this oxide film, p-type conductivity higher than that of a conventional oxide film is obtained. This oxide film is an aggregate of microcrystals, an amorphous form containing microcrystals or an amorphous form, is consequently easily formed on a large substrate, and is therefore suitable also for industrial production.

Abstract: A separated target apparatus includes a base plate; and a plurality of source units including a plurality of separated targets that are adhered on one surface of the base plate and that form a regular array, and a plurality of magnets that are adhered on the other surface of the base plate and that make a pair with the plurality of separated targets. The plurality of source units are arrayed in parallel at an angle between a first direction that is a direction of the regular array and a second direction that is perpendicular to the first direction. Sputtering is performed by using the separated target apparatus having the aforementioned structure.

Abstract: A separated target apparatus and a sputtering method using the separated target apparatus. The separated target apparatus includes a plurality of separated targets that are adhered to a base plate and that form a regular array, wherein gaps between the plurality of separated targets are disposed within an angle between a first direction that is a direction of the regular array, and a second direction perpendicular to the first direction. When sputtering is performed by using the separated target apparatus having the aforementioned structure, it is possible to obtain an uniform deposition quality on a substrate by using the separated targets that are easily manufactured and handled, and thus it is possible to make brightness of a display apparatus be uniform on an entire screen.

Abstract: The radiation-selective absorber coating (20) has two barrier layers (24a, 24b), an IR-reflecting layer (21) arranged thereon, an absorption layer (22) arranged above the IR-reflecting (21) and an antireflection layer (23) over the absorption layer (22). The absorber tube (13) is a steel tube (1) with the radiation-selective absorber coating (20) applied to the outside thereof. In the process of coating the absorber tube (13) a first oxide barrier layer (24a) is applied to a steel tube by thermal oxidation; a second barrier layer (24b) is then applied by physical gas phase deposition of silicon with supply of oxygen; the IR-reflecting layer (21) is then applied by gas phase deposition of gold, silver, platinum or copper; the absorption layer (22) is then applied by deposition of aluminum and molybdenum; and a final antireflection layer (23) is applied by deposition of silicon with supply of oxygen.

Abstract: To provide a laminate excellent in weather resistance, moisture-proof property, adhesion between layers and its long-term stability, and a process for its production. A laminate comprising a substrate sheet containing a fluororesin, an adhesive layer, and a moisture-proof layer containing, as the main component, at least one inorganic compound selected from the group consisting of an inorganic oxide, an inorganic nitride and an inorganic oxynitride, laminated in this order, wherein the adhesive layer contains, as the main component, at least one metal oxide selected from the group consisting of zirconium oxide, tantalum oxide and hafnium oxide.

Abstract: A method of making a coated metal article comprises (a) forming a hardcoat layer on at least a portion of a surface of a metal or metalized substrate by physical vapor deposition; (b) forming a tie layer comprising silicon, oxygen, and hydrogen on at least a portion of the surface of the hardcoat layer by plasma deposition; and (c) applying an at least partially fluorinated composition comprising at least one silane group to at least a portion of the surface of the tie layer.

Abstract: A thin film transistor using an amorphous oxide thin film for an active layer, wherein: the amorphous oxide thin film includes, as main components, indium (In), oxygen (O), and a metal element (M) selected from the group consisting of silicon (Si), aluminum (Al), germanium (Ge), tantalum (Ta), magnesium (Mg) and titanium (Ti); an atomic ratio of M to In in this amorphous oxide thin film is 0.1 or more and 0.4 or less; and carrier density in the amorphous oxide thin film is 1×1015 cm?3 or more and 1×1019 cm?1 or less.

Abstract: A base coat coating composition which is able to suppress cracking of a metal thin film, even when a tough top coat layer capable of satisfactorily protecting the metal thin film is formed on the metal thin film, and even when a heat resistance test is performed, as well as a composite film and a method for producing the composite film. Specifically, a base coat coating composition used for undercoating a metal thin film formed on a metal substrate, and containing a coating film-forming component which contains at least 30% by mass of an epoxy (meth)acrylate having a cyclic structure and has an average molecular weight between crosslinks of 180 to 1,000, as well as a composite film having a base coat layer obtained from the base coat coating composition, and a method for producing the composite film.

Abstract: In a plasma doping device according to the invention, a vacuum chamber is evacuated with a turbo-molecular pump as an exhaust device via a exhaust port while a predetermined gas is being introduced from a gas supply device in order to maintain the inside of the vacuum chamber to a predetermined pressure with a pressure regulating valve. A high-frequency power of 13.56 MHz is supplied by a high-frequency power source to a coil provided in the vicinity of a dielectric window opposed to a sample electrode to generate inductive-coupling plasma in the vacuum chamber. A high-frequency power source for supplying a high-frequency power to the sample electrode is provided. Uniformity of processing is enhanced by driving a gate shutter and covering a through gate.

Abstract: Certain example embodiments relate to robust semi-transparent coatings that are suitable for use in a wide variety of display-on-demand mirror applications, and methods of making the same. In certain example embodiments, a coated article includes a coating supported by a glass substrate. A reflective metal-inclusive layer is formed, directly or indirectly, on the glass substrate. A silicon oxide inclusive layer is formed, directly or indirectly, on the reflective metallic layer. A titanium oxide inclusive layer is formed, directly or indirectly, on the silicon oxide inclusive layer. The metal-inclusive layer is formed so as to reflect incoming light away from the glass substrate such that substantially less incoming light would be reflected away from the glass substrate if lighting were provided on a side of the glass substrate opposite the coating than if no lighting were provided. The surface of the coated article need not necessarily be conductive.

Abstract: A bi-laterally surfaced substrate in which the first surface consists of one or more than one of cerium oxide, aluminum oxide, tin oxide manganese oxide, copper oxide, cobalt oxide, nickel oxide, praseodymium oxide, terbium oxide, ruthenium, rhodium, palladium, silver, iridium, platinum and gold and the second surface consists of one or more than one of ruthenium, rhodium, palladium, silver, iridium, platinum and gold and micro channel micro component reactors including such substrates in a predetermined formed shape and methods for making the same utilizing a thermal spray on one side and a physical deposition process on the other side.

Abstract: A coated glass includes a glass substrate, a first titanium oxide layer, a silver layer, a titanium layer, a titanium nitrogen layer and a second titanium oxide. The first titanium oxide layer is formed on the glass substrate. The silver layer is formed on the first titanium oxide layer. The titanium layer is formed on the sliver layer. The titanium nitrogen layer is formed on the titanium layer, and the second titanium oxide layer is formed on the titanium nitrogen layer.

Abstract: Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically-insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer. The interfacial region contains an ion conducting electronically-insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices.

Abstract: A coated article is described. The coated article includes an aluminum or aluminum alloy substrate and a compound corrosion resistant layer formed on the substrate. The compound corrosion resistant layer includes a plurality of first non-crystalline films and an equal number of second non-crystalline films. Each the first non-crystalline film interleaves with each the second non-crystalline film. The first non-crystalline film is an aluminum nitride film or an aluminum oxide film. The second non-crystalline film is a silicon nitride film or a silicon dioxide film. A method for making the coated article is also described.

Abstract: A coated article is described. The coated article includes a substrate and an alloy layer formed on the substrate. The alloy layer contains iron, silicon, boron, and carbon. The iron within the alloy layer has an atomic percentage of about 60%-95%, the silicon has an atomic percentage of about 1%-20%, the boron has an atomic percentage of about 1%-10%, and the carbon has an atomic percentage of about 1%-10%. A method for making the coated article is also described.

Abstract: A coated article is described. The coated article includes a substrate and an alloy layer formed on the substrate. The alloy layer contains iron, silicon, boron, and phosphor. The iron within the alloy layer has an atomic percentage of about 60%-90%, the silicon has an atomic percentage of about 1%-20%, the boron has an atomic percentage of about 1%-10%, and the phosphor has an atomic percentage of about 1%-10%. A method for making the coated article is also described.

Abstract: A chamber component for a substrate processing system is described. The chamber component comprises a primary member, and a deposit absorbing member coupled to the primary member, wherein the deposit absorbing member comprises a porous material configured to absorb material that is deposited on a surface thereof.

Abstract: In one embodiment, a method for manufacturing a tantalum sputtering target includes a first knead forging step, a first heating step, a second knead forging step, a cold rolling step, and a second heating step. In the first knead forging step, a tantalum material is subjected to two sets or more of knead forging, each of the sets being cold forging in directions parallel to and perpendicular to a thickness direction. In the second knead forging step, one set or more of knead forging is performed after the first heating step, each of the steps being cold forging in the directions parallel to and perpendicular to the thickness direction.

Abstract: We have found that a pulsed DC supply is surprisingly beneficial in the use of sputter deposition for creating nanoparticles. The deposition rate is increased, and the particle size can be tuned so that it clusters around a specific value. A method of sputter deposition is therefore disclosed, comprising the steps of providing a magnetron, a sputter target, and an AC power supply or a pulsed DC power supply for the magnetron, sputtering particles from the sputter target into a chamber containing an inert gas, allowing the particles to coalesce into nanoparticles, and controlling the frequency of said AC power supply or said pulsed DC power supply to take one of a plurality of frequency values, each frequency value corresponding to a respective size distribution of said nanoparticles. The power supply frequency is preferably between 75 kHz and 150 kHz as this appears to yield optimal results. A corresponding apparatus for generating nanoparticles is also disclosed.

Abstract: A semiconductor device includes a semiconductor chip, a contact pad of the semiconductor chip and a first layer arranged over the contact pad. The first layer includes niobium, tantalum or an alloy including niobium and tantalum.

Abstract: A process for treating the surface of magnesium alloy comprises providing a substrate made of magnesium alloy. The substrate is then treated with a chemical conversion treatment agent containing ammonium dihydrogen phosphate and potassium permanganate, to form a chemical conversion film on the substrate. A ceramic coating is then formed on the chemical conversion film using vacuum sputtering.

Abstract: A manufacturing method of a conductive laminated film suppressing a wrinkle has a metal layer forming step in which a conductive metal layer is continuously formed on a surface of a long transparent conductive film where a transparent conductive layer is formed while the transparent conductive film, including a long transparent film base containing a polyester resin as a constituting material and the transparent conductive layer formed thereon, is transported. The metal layer forming step is performed under a reduced pressure atmosphere of 1 Pa or less. The long transparent conductive film is continuously transported by application of a transport tensile force, and the conductive metal layer is continuously deposited on the surface where the transparent conductive layer is formed in a state in which a surface where the transparent conductive layer is not formed contacts the surface of a film-forming roll.

Abstract: A metal-coated polyimide film is excellent in long-term adhesion reliability, exhibits various dimensional stabilities, and is particularly suitable for FPC, COF and TAB applications. The metal-coated polyimide film comprises a non-thermoplastic polyimide film; and a metal layer being directly formed on one surface or both surfaces of the non-thermoplastic polyimide film without using an adhesive, wherein the non-thermoplastic polyimide film contains a non-thermoplastic polyimide resin having a thermoplastic polyimide block component.

Abstract: A device housing is described. The device housing includes an aluminum alloy substrate and a compound corrosion resistant layer formed on the substrate. The compound corrosion resistant layer includes two crystalline films and a non-crystalline film formed between the crystalline films. One of the crystalline films is formed on the substrate. The crystalline film is a chromium-oxygen-nitrogen film or an aluminum-oxygen-nitrogen film. The non-crystalline film is an aluminum oxide film or a silicon dioxide film. A method for making the device housing is also described.

Abstract: An apparatus for coating a substrate is provided that includes a racetrack-shaped plasma source having two straight portions and at least one terminal turnaround portion connecting said straight portions. A tubular target formed of a target material that forms a component of the coating has an end. The target is in proximity to the plasma source for sputtering of the target material. The target is secured to a tubular backing cathode, with both being rotatable about a central axis. A set of magnets are arranged inside the cathode to move an erosion zone aligned with the terminal turnaround toward the end of the target as the target is utilized to deposit the coating on the substrate. Target utilization of up to 87 weight percent the initial target weight is achieved.

Abstract: A coating method for forming a pattern on a workpiece is provided. The method includes the follow steps: providing a workpiece having a surface, forming a coating layer over the surface using a physical vapor deposition method; providing a mask having a shape conforming to a predetermined pattern; attaching the mask to the surface such that a portion of the coating layer is shielded. The coating layer consists of a shielded portion and an unwanted portion surrounding the shielded portion. Finally, removing the unwanted portion of the coating layer using a magnetic abrasive finishing method, and removing the mask to obtain the shielded portion having the predetermined pattern on the workpiece.

Abstract: This multilayer component (11) for encapsulating an element (12) which is sensitive to air and/or moisture comprises an organic polymer layer (1) and at least one barrier stack (2). The barrier stack (2) comprises at least three successive thin layers (21-23) having alternately lower and higher degrees of crystallinity, the ratio of the degree of crystallinity of a layer of higher degree of crystallinity to the degree of crystallinity of a layer of lower degree of crystallinity being greater than or equal to 1.1.

Abstract: A method and apparatus for providing uniform coatings of lithium on a substrate are provided. In one aspect of the present invention is a method of selectively controlling the uniformity and/or rate of deposition of a metal or lithium in a sputter process by introducing a quantity of reactive gas over a specified area in the sputter chamber. This method is applicable to planar and rotating targets.

Abstract: This multilayer component (11) for encapsulating an element (12) which is sensitive to air and/or moisture comprises an organic polymer layer (1) and at least one barrier stack (2). The barrier stack (2) comprises at least one sequence of layers consisting of a retention layer (22) sandwiched between two high-activation-energy layers (21, 23), in which: for each of the two high-activation-energy layers (21, 23), the difference in activation energy for water vapor permeation between, on the one hand, a reference substrate coated with the high-activation-energy layer and, on the other hand, this same reference substrate when bare is greater than or equal to 20 kJ/mol; and the ratio of the effective water vapor diffusivity in the retention layer (22) on a reference substrate to the water vapor diffusivity in this same reference substrate when bare is strictly less than 0.1.

Abstract: The subject of the invention is a process for obtaining a substrate coated with a photocatalytic film based on a mixed oxide of bismuth and at least one metal other than bismuth, comprising at least a step of depositing said oxide by a sputtering technique.

Abstract: A biosensor is disclosed comprising a support; a conductive layer composed of an electrical conductive material such as a noble metal, for example gold or palladium, and carbon; slits parallel to and perpendicular to the side of the support; working, counter, and detecting electrodes; a spacer which covers the working, counter, and detecting electrodes on the support; a rectangular cutout in the spacer forming a specimen supply path; an inlet to the specimen supply path; a reagent layer formed by applying a reagent containing an enzyme to the working, counter, and detecting electrodes, which are exposed through the cutout in the spacer; and a cover over the spacer. The biosensor can be formed by a simple method, and provides a uniform reagent layer on the electrodes regardless of the reagent composition.

Abstract: The present invention relates to a sputtering target of a multi-component single body, a preparation method thereof, and a method for fabricating a multi-component alloy-based nanostructured thin film using the same. The sputtering target according to the present invention comprises an amorphous or partially crystallized glass-forming alloy system composed of a nitride forming metal element, which is capable of reacting with nitrogen to form a nitride, and a non-nitride forming element which has no or low solid solubility in the nitride forming metal element and does not react with nitrogen or has low reactivity with nitrogen, wherein the nitrogen forming metal element comprises at least one element selected from Ti, Zr, Hf, V, Nb, Ta, Cr, Y, Mo, W, Al, and Si, and the non-nitride forming element comprises at least one element selected from Mg, Ca, Sc, Ni, Cu, Ag, In, Sn, La, Au, and Pb.

Abstract: A device housing is described. The device housing includes an aluminum alloy substrate and a compound corrosion resistant layer formed on the substrate. The compound corrosion resistant layer includes two crystalline films and a non-crystalline film formed between the crystalline films. One of the crystalline films is formed on the substrate. The crystalline film is a chromium-oxygen-nitrogen film or an aluminum-oxygen-nitrogen film. The non-crystalline film is an aluminum oxide film or a silicon dioxide film. A method for making the device housing is also described.

Abstract: A method of forming printed circuit boards and packaging substrates. After blind vias are created in a dielectric layer, a first seed layer is provided in the vias and on the dielectric layer. Copper is applied to fill the vias and to form a copper layer over the vias and over the first seed layer. The first seed layer and the copper layer are removed and a second seed layer is formed on the dielectric layer and the exposed surfaces of the vias. A wire pattern is then formed using a photo-sensitive thin film applied to the second seed layer, and the wires in the wire pattern are thickened. The photo-sensitive thin film and the exposed portions of the second seed layer are removed to form a first conductive pattern of wires. The process may be repeated to form a second conductive pattern of wires on the first pattern.

Abstract: A demisable fuel supply system for a satellite includes a pressurized aluminum alloy tank with an aluminum alloy propellant management device therein. The propellant management device (PMD) can have any capillary action surface tension fluid transport features known in the art. Selected inner surfaces of the tank and the PMD are covered with a titanium based coating to guarantee propellant wettability and corrosion resistance of the fuel supply system.

Abstract: A coated article is described. The coated article includes a substrate, a bonding layer formed on the substrate, a plurality of nickel-chromium-nitrogen layers and a plurality of silver-cerium alloy layers formed on the bonding layer. The bonding layer is a nickel-chromium layer. Each nickel-chromium-nitrogen layer interleaves with one silver-cerium alloy layer. One of the nickel-chromium-nitrogen layers is directly formed on the bonding layer. A method for making the coated article is also described.

Abstract: A coated article is described. The coated article includes a substrate, a bonding layer formed on the substrate, a plurality of nickel-chromium-nitrogen layers and a plurality of copper-cerium alloy layers formed on the bonding layer. The bonding layer is a nickel-chromium layer. Each nickel-chromium-nitrogen layer interleaves with one copper-cerium alloy layer. One of the nickel-chromium-nitrogen layers is directly formed on the bonding layer. A method for making the coated article is also described.

Abstract: An apparatus and method are provided for improved utilization of a sputter target in the longitudinal end regions. The focus of erosion in the end regions is widened, thereby extending the useful life of the target. This provides improved efficiency and reduces waste because a greater proportion of the target material in the more expansive central region can be harvested, because the target is utilized for a longer period of time.

Abstract: This invention provides a sputtering method which can generate an electric discharge under practical conditions and maintain the pressure in a plasma space uniform, and a sputtering apparatus used for the same. The sputtering method includes a first gas introduction step (step S403) of introducing a process gas from a first gas introduction port formed in a sputtering space defined by a deposition shield plate, a substrate holder, and the target which are disposed in a process chamber, a voltage application step (step S407) of applying a voltage to the target after the first gas introduction step, and a second gas introduction step (step S405) of introducing a process gas from a second gas introduction port formed outside the sputtering space.

Abstract: A machine for metallization of three-dimensional objects of small sizes comprising a feeding device (2) to supply a succession of objects to be metallized (20), a metallizing device (3) comprising a main sputtering chamber (31) in a condition of permanent vacuum and a loading and unloading chamber (30) for a single object, which can be switched between a vacuum condition and an ambient-pressure condition and is operatively connected to the sputtering chamber (31), an unloading device (4) for the succession of metallized objects (21), which is operatively placed downstream of the metallizing device (3), and a painting station (10, 14) of the airless type and operatively disposed downstream of the feeding device (2) and upstream of the unloading device (4).

Abstract: A templated substrate includes a base layer, and a template layer is disposed on the base layer and having a composition including a single-crystal Group III nitride. The template layer includes a continuous sublayer on the base layer and a nanocolumnar sublayer on the first sublayer, wherein the nanocolumnar sublayer includes a plurality of nano-scale columns.

Abstract: Embodiments of the invention generally relate to conductive foils having multiple layers for use in photovoltaic modules and methods of forming the same. The conductive foils generally include a layer of aluminum foil having one or more metal layers with decreased contact resistance disposed thereon. An anti-corrosion material and a dielectric material are generally disposed on the upper surface of the metal layer. The conductive foils may be formed on a carrier prior to construction of a photovoltaic module, and then applied to the photovoltaic module as a conductive foil assembly during construction of the photovoltaic module. Methods of forming the conductive foils generally include adhering an aluminum foil to a carrier, removing native oxides from a surface of the aluminum foil, and sputtering a metal onto the aluminum foil. A dielectric material and an anti-corrosion material may then be applied to the upper surface of the sputtered metal.

Abstract: A method for making a carbon nanotube composite structure, the method comprising the steps of: providing a carbon nanotube structure having a plurality of carbon nanotubes; and forming at least one conductive coating on a plurality of the carbon nanotubes in the carbon nanotube structure to achieve a carbon nanotube composite structure, wherein the conductive coating comprises of a conductive layer.

Abstract: In a transparent electrode substrate including a transparent electrode film composed of a crystallized ITO film in which an ITO film is crystallized by annealing, the present invention has an object of blocking movement of substances such as volatile components within a color filter layer to the transparent electrode film. The transparent electrode substrate (1) of the present invention includes a transparent substrate (2), an amorphous transparent conductive film (5) disposed on the upper side of the aforementioned transparent substrate (2), and a transparent electrode film (4) disposed on the upper side of the aforementioned amorphous transparent conductive film (5) and composed of a crystallized ITO film.

Abstract: A sputtering apparatus includes a target holder arranged in a vacuum chamber and holds a target to be deposited on a substrate, a substrate holder arranged in the vacuum chamber and supports the substrate, a shutter interposed between the target holder and the substrate holder, and that can set a closed state in which the shutter shields the substrate holder and target holder from each other, and an open state in which the shutter releases the space between the substrate holder and the target holder, a shutter support member which supports the shutter, and a joint mechanism interposed between the shutter support member and the shutter, and that can set a state in which the joint mechanism disconnects the shutter and shutter support member to be able to rotate the shutter, and a state in which the joint mechanism couples and fixes the shutter and shutter support member.

Abstract: A process for producing plasma coated glass substrates free of back side coating (BSC) is provided. A low-E glass coated structure is also provided that uses a BSC as a protective coating that promotes transport and handling of low-E glass that is then subsequently delaminated. A thin film is deposited on the back side of the glass substrate before the top side of the glass is coated. Then, during the sputter down process, BSC occurs as normal and deposits over this back side film (BSF). In a subsequent process, outside the vacuum chamber, the glass back side is washed or otherwise delaminated. The BSF composition is selected to make the BSC easily removed in this wash process or other delamination process.

Abstract: This substrate (11) for a device (50) that collects or emits radiation comprises a transparent polymer layer (1) and a barrier layer (2) on at least one face (1A) of the polymer layer. The barrier layer (2) consists of an antireflection multilayer of at least two thin transparent layers (21, 22, 23, 24) having both alternately lower and higher refractive indices and alternately lower and higher densities, wherein each thin layer (21, 22, 23, 24) of the constituent multilayer of the barrier layer (2) is an oxide, nitride or oxynitride layer.