Abstract: A power storage device with favorable battery characteristics and a manufacturing method thereof are provided. The power storage device includes at least a positive electrode and a negative electrode provided so as to face the positive electrode with an electrolyte provided therebetween. The positive electrode includes a collector and a film containing an active material over the collector. The film containing the active material contains LieFefPgOh satisfying relations 3.5?h/g?4.5, 0.6?g/f?1.1, and 0?e/f?1.3 and LiaFebPcOd satisfying relations 3.5?d/c?4.5, 0.6?c/b?1.8, and 0.7?a/b?2.8. The film containing the active material contains the LiaFebPcOd satisfying the relations 3.5?d/c?4.5, 0.6?c/b?1.8, and 0.7?a/b?2.8 in a region which is in contact with the electrolyte.

Abstract: Provided are a magneto resistive effect element with a stable magnetization direction perpendicular to a film plane and with a controlled magnetoresistance ratio, and a magnetic memory using the magneto resistive effect element. Ferromagnetic layers 106 and 107 of the magneto resistive effect element are formed from a ferromagnetic material containing at least one type of 3d transition metal such that the magnetoresistance ratio is controlled, and the film thickness of the ferromagnetic layers is controlled on an atomic layer level such that the magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane.

Abstract: A method including providing a substrate; treating the substrate to form a passive layer, wherein the passive layer has a thickness of at least 3 nm; and depositing an electrically conductive coating over the substrate, wherein the coating has a thickness of about 0.1 nm to about 50 nm.

Abstract: An oxide including indium (In), gallium (Ga) and zinc (Zn), wherein diffraction peaks are observed at positions corresponding to incident angles (2?) of 7.0° to 8.4°, 30.6° to 32.0°, 33.8° to 35.8°, 53.5° to 56.5° and 56.5° to 59.5° in an X-ray diffraction measurement (CuK? rays), and one of diffraction peaks observed at positions corresponding to incident angles (2?) of 30.6° to 32.0° and 33.8° to 35.8° is a main peak and the other is a sub peak.

Abstract: Method for manufacturing magnetron coated substrates, in which along the target and on its backside pointing from the substrate, a magnet arrangement is present by which along the sputter surface of the target at least one closed loop of a tunnel shaped magnetron magnetic field is generated, characterized in that for setting the sputter rate distribution the distance of a part of the magnet arrangement to the backside of the target is changed.

Abstract: A method for producing a polarizing element includes: forming particulate materials of a metal halide on a glass substrate; forming a protective film that covers the particulate materials in a non-plasma environment; stretching the particulate materials by heating and stretching the glass substrate; and forming acicular metal particles by reducing the metal halide constituting the stretched particulate materials.

Abstract: An apparatus and method are provided for improving perpendicular magnetic recording media. The present invention provides media, and a method of fabricating media in a cost-effective manner, with a reduced ruthenium (Ru) content interlayer structure, while meeting media performance requirements. A perpendicular magnetic recording medium is provided comprising a non-magnetic substrate having a surface, and a layer stack situated on the substrate surface. The layer stack comprises, in overlying sequence from the substrate surface a magnetically soft underlayer; an amorphous or crystalline, non-magnetic seed layer; an interlayer structure for crystallographically orienting a layer of a perpendicular magnetic recording material situated on the underlayer; and at least one crystallographically oriented, magnetically hard, perpendicular magnetic recording layer situated on the interlayer structure.

Abstract: This substrate (11) for a device (50) that collects or emits radiation comprises a transparent polymer layer (1) and a barrier layer (2) on at least one face (1A) of the polymer layer. The barrier layer (2) consists of an antireflection multilayer of at least two thin transparent layers (21, 22, 23, 24) having both alternately lower and higher refractive indices and alternately lower and higher densities, wherein each thin layer (21, 22, 23, 24) of the constituent multilayer of the barrier layer (2) is an oxide, nitride or oxynitride layer.

Abstract: A shielding component and a sputter gun are described. The sputter gun has a housing. The housing has a region configured to expose a target surface. The shielding component extends around an inward facing periphery of the region. The shielding component comprises metal foam. The shielding component is configured to provide a fluid proximate to the target surface. An annular channel may be arranged to provide a gas through pores of the metal foam of the shielding component, to the region proximate to the target.

Abstract: A sputtering target comprises an alloy of scandium and aluminum, wherein the alloy has a concentration of 3-10 at % scandium and 90-97 at % aluminum. The sputtering target can be used to produce a piezoelectric layer for an apparatus such as an acoustic resonator.

Abstract: A method for manufacturing an oxide semiconductor layer includes following steps: providing a substrate; forming an oxide semiconductor layer on the substrate by sputtering a first kind of metallic ions from a first metallic oxide sputtering target, and sputtering at least two second kinds of metallic ions from a second metallic oxide sputtering target. The at least two second kind of metallic ions are different from the first kind of metallic ions. A proportion of the first kind of metallic ions and the at least two second kind of metallic ions is adjustable by controlling a depositing speed of the oxide semiconductor layer and a period of using a baffle plate in sputtering. A method for manufacturing a thin film transistor is also provided.

Abstract: A deposition chamber is provided. The deposition chamber includes a plurality of sputter guns disposed within the chamber, wherein the plurality of sputter guns are operable to vertically extend and retract within the chamber and wherein each gun of the plurality of sputter guns is pivotable around a pivot axis. The chamber includes a substrate support rotatable around a first axis and a second axis and a plate disposed over the substrate support. The plate has a plurality of apertures extending therethrough. The plurality of apertures includes an aperture located below each sputter gun of the plurality of sputter guns and a centrally located aperture.

Abstract: Embodiments of the present invention include a recording medium comprising: a hard magnetic recording layer and an interlayer disposed under the hard magnetic recording layer, wherein the interlayer comprises an upper layer of Ru-based alloy and a lower layer of RuCo or ReCo alloy. Generally for embodiments of the present invention, the lower layer of RuCo or ReCo alloy is formed over a seed layer using a low-pressure sputter process, and the upper layer of Ru-based alloy is formed over the lower layer using a high-pressure sputter process.

Abstract: The invention relates to a speaker dome comprising: a polycrystalline diamond dome body formed of a material of high stiffness with a Young's modulus greater than 50 GPa and having respective inner and outer surfaces; and a coating on at least one side of the dome body, wherein the coating comprises an optically refractive metal compound layer which is semi-transparent and which forms one or more colours via interference of reflected light from front and rear surfaces of the layer. The invention also relates to a diamond component comprising: a diamond body; and a coating on at least one side of the diamond body; wherein the coating comprises at-least two layers including a first layer bonded to the at least one side of the diamond body and a second layer disposed over the first layer, the second layer being an optically refractive metal compound coating which is semi-transparent and which forms one or more colours via interference of reflected light from front and rear surfaces of the second layer.

Abstract: Transparent conducting oxides and production thereof are disclosed. An exemplary method of producing a transparent conducting oxide (TCO) material may comprise: providing a TCO target doped with either a high-permittivity oxide or a low-permittivity oxide in a process chamber. The method may also comprise depositing a metal oxide on the target in the process chamber to form a thin film having enhanced optical properties without substantially decreasing electrical quality.

Abstract: In one embodiment, a method for manufacturing a tantalum sputtering target includes a first knead forging step, a first heating step, a second knead forging step, a cold rolling step, and a second heating step. In the first knead forging step, a tantalum material is subjected to two sets or more of knead forging, each of the sets being cold forging in directions parallel to and perpendicular to a thickness direction. In the second knead forging step, one set or more of knead forging is performed after the first heating step, each of the steps being cold forging in the directions parallel to and perpendicular to the thickness direction.

Abstract: A method for forming and protecting high quality bismuth oxide films comprises depositing a transparent thin film on a substrate comprising one of Si, alkali metals, or alkaline earth metals. The transparent thin film is stable at room temperature and at higher temperatures and serves as a diffusion barrier for the diffusion of impurities from the substrate into the bismuth oxide. Reactive sputtering, sputtering from a compound target, or reactive evaporation are used to deposit a bismuth oxide film above the diffusion barrier.

Abstract: The present disclosure relates to an apparatus and method utilizing double glow discharge for sputter cleaning of a selected surface. The surface may include the inner surface of a hollow substrate such as a tube which inner surface may then be coated via magnetron sputter deposition.

Abstract: A sputtering apparatus includes a chamber. A substrate supporting part is disposed in the chamber. A plurality of targets face the substrate supporting part. A target supporting part is disposed under each of the targets to hold the target. A first ground part is disposed between two target supporting parts adjacent to each other and includes a cover separable therefrom. A second ground part is disposed between two target supporting parts adjacent to each other, except for where the first ground part is disposed.

Abstract: A method of making a heat treated (HT) or heat treatable coated article. A method of making a coated article includes a step of heat treating a glass substrate coated with at least layer of or including carbon (e.g., diamond-like carbon (DLC)) and an overlying protective film thereon. In certain example embodiments, the protective film may be of or include both (a) an oxygen blocking or barrier layer, and (b) a release layer of or including zinc oxide. Treating the zinc oxide inclusive release layer with plasma including oxygen (e.g., via ion beam treatment) improves thermal stability and/or quality of the product. Following and/or during heat treatment (e.g., thermal tempering, or the like) the protective film may be entirely or partially removed.

Abstract: A damascene process incorporating a GCIB step is provided. The GCIB step can replace one or more CMP steps in the traditional damascene process. The GCIB step allows for selectable removal of unwanted material and thus, reduces unwanted erosion of certain nearby structures during damascene process. A GCIB step may also be incorporated in the damascene process as a final polish step to clean up surfaces that have been planarized using a CMP step.

Abstract: The present invention relates to a cutting tool insert comprising a body of cemented carbide, cermet, ceramics, high speed steel (HSS), polycrystalline diamond (PCD) or polycrystalline cubic boron nitride (PCBN), a hard and wear resistant coating is applied, grown by physical vapour deposition (PVD) such as cathodic arc evaporation or magnetron sputtering. Said coating comprises at least one layer of (ZrxAl1-x)N with of 0.45<x<0.85 and 0.90?y<1.30 with a thickness between 0.5 and 10 ?m. Said layer has a nanocrystalline microstructure consisting of a single cubic phase or a mixture of hexagonal and cubic phases. The insert is particularly useful in metal cutting applications generating high temperatures with improved crater wear resistance.

Abstract: A sputtering apparatus comprises a chamber configured to contain at least one sputter target and at least one substrate to be coated. The chamber has at least one adjustable shielding member defining an adjustable aperture. The member is positioned between the at least one sputter target and the at least one substrate. The aperture is adjustable in at least one of the group consisting of area and shape.

Abstract: An apparatus comprises a head transducer and a resistive temperature sensor provided on the head transducer. The resistive temperature sensor comprises a first layer comprising a conductive material and having a temperature coefficient of resistance (TCR) and a second layer comprising at least one of a specular layer and a seed layer. A method is disclosed to fabricate such sensor with a laminated thin film structure to achieve a large TCR. The thicknesses of various layers in the laminated thin film are in the range of few to a few tens of nanometers. The combinations of the deliberately optimized multilayer thin film structures and the fabrication of such films at the elevated temperatures are disclosed to obtain the large TCR.

Abstract: A method of fabricating a zinc oxide (ZnO) thin film in which the surface shape of the ZnO thin film can be controlled during deposition of the ZnO thin film. The method includes depositing the ZnO thin film on a substrate by chemical vapor deposition (CVD). The CVD feeds an etching gas that etches the ZnO thin film concurrently with a source gas and an oxidizer gas, thereby controlling the surface shape of the ZnO thin film that is being deposited.

Abstract: Transparent conducting oxides and production thereof are disclosed. An exemplary method of producing a transparent conducting oxide (TCO) material may comprise: providing a TCO target (110) doped with either a high-permittivity oxide or a low-permittivity oxide in a process chamber (100). The method may also comprise depositing a metal oxide on the target (110) to form a thin film having enhanced optical properties without substantially decreasing electrical quality.

Abstract: A break on a video signal line is prevented during patterning on the video signal line. A video signal line, a drain electrode, and a source electrode are simultaneously formed in the same layer. The video signal line includes three layers: a base layer, an AlSi layer, and a cap layer. Conventionally, an alloy having a high etching rate is formed at the boundary between the AlSi layer and the cap layer, causing breakage during patterning on the video signal line. According to the present invention, in the formation of the video signal line, the AlSi layer is formed by sputtering, a TFT is exposed to the atmosphere to form an Al oxide layer on the surface of the AlSi layer, and then the cap layer is formed by sputtering. Thus, the formation of an alloy having a high etching rate on a part of the AlSi layer is prevented, precluding the occurrence of a break on the video signal line.

Abstract: A process for treating a non-ferrous metal component, comprising placing the component into a process chamber at an elevated temperature, biasing the component to have a potential capable of attracting ions, introducing oxygen into the chamber at a pressure such that a glow discharge comprising oxygen ions is generated, the process chamber additionally comprising a glow discharge ionization enhancing means, and activating the glow discharge ionization enhancing means thereby increasing charged species density of the glow discharge, the oxygen ions flowing towards the component and colliding the surface thereof at least some of which diffuse into the component.

Abstract: Film formation conditions are determined in accordance with relationships among a film formation temperature Ts (° C.), a difference Vs?Vf (V), which is the difference between a plasma potential Vs (V) in the plasma at the time of the film formation and a floating potential Vf (V), and characteristics of the formed film. For a piezoelectric film containing at least one kind of Pb-containing perovskite type oxide, the film formation conditions should preferably be determined within a range such that Formulas (1) and (2) shown below are satisfied: Ts(° C.)?400??(1) ?0.2Ts+100<Vs?Vf(V)<?0.

Abstract: A three step ion beam etch (IBE) sequence involving low energy (<300 eV) is disclosed for trimming a sensor critical dimension (free layer width=FLW) to less than 50 nm. A first IBE step has a steep incident angle with respect to the sensor sidewall and accounts for 60% to 90% of the FLW reduction. The second IBE step has a shallow incident angle and a sweeping motion to remove residue from the first IBE step and further trim the sidewall. The third IBE step has a steep incident angle to remove damaged sidewall portions from the second step and accounts for 10% to 40% of the FLW reduction. As a result, FLW approaching 30 nm is realized while maintaining high MR ratio of over 60% and low RA of 1.2 ohm-?m2. Sidewall angle is manipulated by changing one or more ion beam incident angles.

Abstract: A method of fabricating a rare-earth element doped piezoelectric material having a first component, a second component and the rare-earth element. The method includes: providing a substrate; initially flowing hydrogen over the substrate; after the initially flowing of the hydrogen over the substrate, flowing the first component to form the rare-earth element doped piezoelectric material over a surface of a target, the target comprising the rare-earth metal in a certain atomic percentage; and sputtering the rare-earth element doped piezoelectric material from the target on the substrate.

Abstract: Materials, techniques, systems, and devices are disclosed for fabricating and implementing high-strength permanent magnets. In one aspect, a method of fabricating a magnet includes distributing particles of a first magnetic material such that the particles are substantially separated, in which the particles include a surface substantially free of oxygen. The method includes forming a coating of a second magnetic material over each of the particles, in which the coating forms an interface at the surface that facilitates magnetic exchange coupling between the first and second magnetic materials. The method includes consolidating the coated particles to produce a magnet that is magnetically stronger than each of the first and second magnetic materials.

Abstract: Apparatus for forming a solar cell comprises a housing defining a chamber including a substrate support. A sputtering source is configured to deposit particles of a first type over at least a portion of a surface of a substrate on the substrate support. An evaporation source is configured to deposit a plurality of particles of a second type over the portion of the surface of the substrate. A cooling unit is provided between the sputtering source and the evaporation source. A control system is provided for controlling the evaporation source based on a rate of mass flux emitted by the evaporation source.

Abstract: A coated article is provided. The coated article comprises a substrate having a first anti-fingerprint layer, and a second anti-fingerprint layer formed thereon and in that order. The first anti-fingerprint layer is an aluminum oxide layer. The second anti-fingerprint layer is an aluminum-oxygen-nitrogen compound layer implanted with one or more ion species selected from the group consisting of fluorine ion, boron ion, and nitrogen ion. A method for making the coated article is also described there.

Abstract: An advanced coating for showerhead used in plasma processing chamber is provided. The advanced coating is formed using plasma enhanced physical vapor deposition. The coating formation involved a physical process, such as condensation of source material on the showerhead surface, and chemical process, wherein active species from plasma interact with the condensed source materials. Also, non-reactive species from the plasma impinge on the bottom surface to condense the formed coating.

Abstract: A method for inhibiting diffusion of gases and/or transmission of photons through elastomeric seals and a diffusion inhibiting elastomeric seal wherein at least a portion of the surface of a diffusion inhibiting elastomeric seal is coated with a compatibly-deformable, malleable metal coating.

Abstract: Various techniques, methods and devices are disclosed where metal is deposited on a substrate, and stress caused by the metal to the substrate is limited, for example to limit a bending of the wafer.

Abstract: A high-dielectric sheet for a printed circuit board includes a first electrode, a first sputter film formed on the first electrode, an intermediate layer formed on the first sputter film by calcining a sol-gel film, a second sputter film formed on the intermediate layer, and a second electrode provided on the second sputter film.

Abstract: A vacuum processing apparatus includes an evacuatable vacuum chamber, a substrate holder which is provided in the vacuum chamber, has a substrate chuck surface vertically facing down, and includes an electrostatic chuck mechanism which electrostatically chucks a substrate, a substrate support member which is provided in the vacuum chamber to keep the substrate parallel to the substrate chuck surface and support the substrate in an orientation that allows the substrate chuck surface to chuck the substrate, and a moving mechanism which moves at least one of the substrate holder and the substrate supported by the substrate support member so as to bring the substrate and the substrate holder into contact with each other, thereby causing the substrate holder to chuck the substrate.

Abstract: A process in which both an optical coating, for example, an AR coating, and an ETC coating are deposited on a glass substrate article, in sequential steps, with the optical coating being deposited first and the ETC coating being deposited second, using the same apparatus and without exposing the article to the atmosphere at any time during the application of the optical coating and ETC coating.

Abstract: An electrode for forming an electrochemical cell with a substrate and a method of forming said electrode. The electrode comprises a carrier provided with an insulating layer which is patterned at a front side. Conducting material in an electrode layer is applied in the cavities of the patterned insulating layer and in contact with the carrier. A connection layer is applied at the backside of the carrier and in contact with the carrier. The periphery of the electrode is covered by the insulating material.

Abstract: A scintillator panel includes a scintillator layer to be formed on an imaging device and an oxide layer on the scintillator layer to transmit an X-ray, reflect a visible light, and prevent moisture from being penetrated. The oxide layer has a structure including a number of oxide layers.

Abstract: In some embodiments, substrate processing apparatus may include a chamber body; a lid disposed atop the chamber body; a target assembly coupled to the lid, the target assembly including a target of material to be deposited on a substrate; an annular dark space shield having an inner wall disposed about an outer edge of the target; a seal ring disposed adjacent to an outer edge of the dark space shield; and a support member coupled to the lid proximate an outer end of the support member and extending radially inward such that the support member supports the seal ring and the annular dark space shield, wherein the support member provides sufficient compression when coupled to the lid such that a seal is formed between the support member and the seal ring and the seal ring and the target assembly.

Abstract: The invention relates to a process for coating a substrate composed of cemented carbide, a cermet, steel or ceramic with at least one Ti1-xAlxN layer by means of a DC sputtering process. The invention further relates to a workpiece or tool which has been coated by the above-described process and to the use thereof. It is an object of the present invention to provide a process by means of which it is possible to produce coatings which combine the advantages of the sputtering process and the arc process, i.e. to make it possible to obtain a coating which has a low roughness and an advantageous (200) texture. A further object of the present invention is to provide a workpiece which has a coating having the properties mentioned. A further object of the present invention is to use tools which are particularly suitable for machining metals. The object achieved by the process is distinguished by ionization aids being used for increasing the plasma densities.

Abstract: A lithium battery comprises a support, and a plurality of battery component layers on the support, the battery component layers including a cathode having a cathode area with a plurality of cathode perimeter edges. An electrolyte is on the cathode, and an anode is on the electrolyte. The anode comprises an anode area with a plurality of anode perimeter edges, each anode perimeter edge having a corresponding cathode perimeter edge that lies adjacent to and below the anode perimeter edge. The anode area is sized so that at least one anode perimeter edge is terminated before its corresponding cathode perimeter edge to define a gap between the anode perimeter edge and the corresponding cathode perimeter edge, the gap having a gap distance G.

Abstract: An apparatus and method are provided for improving perpendicular magnetic recording media. The present invention provides media, and a method of fabricating media in a cost-effective manner, with a reduced ruthenium (Ru) content interlayer structure, while meeting media performance requirements. A perpendicular magnetic recording medium is provided comprising a non-magnetic substrate having a surface, and a layer stack situated on the substrate surface. The layer stack comprises, in overlying sequence from the substrate surface a magnetically soft underlayer; an amorphous or crystalline, non-magnetic seed layer; an interlayer structure for crystallographically orienting a layer of a perpendicular magnetic recording material situated on the underlayer; and at least one crystallographically oriented, magnetically hard, perpendicular magnetic recording layer situated on the interlayer structure.

Abstract: The invention relates to a process for manufacturing a lithiated electrode, which comprises: the deposition, on a substrate, of several layers of a non-lithiated electrode material and several lithium layers in order to form a multilayer consisting of an alternation of layers of non-lithiated electrode material and lithium layers, this multilayer starting with and terminating with a layer of non-lithiated electrode material; and the thermal annealing of the multilayer thus formed. It also relates to a lithiated electrode that can be obtained by this process and to the uses of this electrode: production of thin-film lithium batteries, especially microbatteries for chip cards, “smart” labels, horological articles, miniaturized communications tools, microsystems; production of thin-film supercapacitors and electrochromic cells.

Abstract: This invention relates to a coated article including a low-emissivity (low-E) coating. In certain example embodiments, the low-E coating is provided on a substrate (e.g., glass substrate) and includes at least first and second infrared (IR) reflecting layers (e.g., silver based layers) that are spaced apart by contact layers (e.g., NiCr based layers) and a dielectric layer of or including a material such as silicon nitride. In certain example embodiments, the coated article has a low visible transmission (e.g., no greater than 50%, more preferably no greater than about 40%, and most preferably no greater than about 39%).

Abstract: Methods of forming a thin film are disclosed. One such method can include sputtering a target material to form a first thin film resistor and adjusting a parameter of deposition to modulate a property of a subsequently formed second thin film resistor. For instance, a substrate bias and/or a substrate temperature can be adjusted to modulate a property of the second thin film resistor. A temperature coefficient of resistance (TCR) and/or another property of the second thin film resistor can be modulated by adjusting the parameter of deposition. The target material sputtered onto the substrate can include, for example, a Cr alloy, a Ni alloy, SiCr, NiCr, or the like. A relationship can be established between the substrate bias and/or substrate temperature and the thin film resistor property, and the relationship can be used in selecting deposition conditions for a desired property value.

Abstract: According to embodiments of the present invention, a method for manufacturing a recording medium for heat-assisted-magnetic-recording (HAMR) is provided. The method includes forming an underlayer on a substrate, the underlayer including a precursor material, epitaxially depositing an interlayer on the underlayer, forming a recording layer over the interlayer, and converting the precursor material to a converted material having a thermal conductivity that is higher than a thermal conductivity of the recording layer. According to further embodiments of the present invention, another method for manufacturing a recording medium for heat-assisted-magnetic-recording (HAMR) and a recording medium for heat-assisted-magnetic-recording (HAMR) are also provided.