Abstract: A fastening mechanism includes a basic body made from a base metal, onto which at least one corrosion-resistant layer is applied. A further layer is applied at least partially onto the at least one corrosion-resistant layer. The further layer has a lower coefficient of friction than the at least one corrosion-resistant layer.

Abstract: A Ti02-based photocatalyst is fabricated as a composite of titania with adhered nanostructures which contain a non-noble metal in galvanic contact with a noble metal. The catalyst effectively overcome aging and/or deactivation effects observed in a system free of the non-noble metal. The composite material showed a corrosion protective effect on the photoactivity of fresh catalyst for over 180-240 days, and it enhanced the rate of the water reduction reaction relative to bare Ti02. Variations in porosity and non-noble metal content of the alloy portion of the nanostructures influenced the performance of the catalyst composite. The protective effect of the non-noble metal is through a cathodic corrosion protection mechanism.

Abstract: A substrate structure, a semiconductor package device and a manufacturing method of substrate structure are provided. The substrate structure comprises a conductive structure comprising a first metal layer, a second metal layer and a third metal layer. The second metal layer is disposed on the first metal layer. The third metal layer is disposed on the second metal layer. Each of the second metal layer and the third metal layer has a first surface and a second surface opposite to the first surface. The first surface of the third metal layer is connected to the second surface of the second metal layer. The surface area of the first surface of the third metal layer is larger than that of the second surface of the second metal layer. A substrate structure, semiconductor package device, and a manufacturing method of substrate structure are provided. The substrate structure includes a conductive structure, comprising a first metal layer, a second metal layer, and a third metal layer.

Abstract: A method for providing a structure in a magnetic recording transducer is described. The method includes plating a first layer in a plating bath using a first plurality of plating conditions. The first layer has a first galvanic potential. The method also includes modifying the plating bath and/or the first plurality of plating conditions to provide a modified plating bath and/or a second plurality of plating conditions. The method further includes plating a second layer using the modified plating bath and/or the second plurality of plating conditions. The second layer has a second galvanic potential. The first galvanic potential is between the second galvanic potential and a third galvanic potential of a third layer if the third layer adjoins the first layer. The second galvanic potential is between the first galvanic potential and the third galvanic potential of the third layer if the third layer adjoins the second layer.

Abstract: The present invention provides a method and precursor structure to form a Group IBIIIAIVA solar cell absorber layer. The method includes forming a Group IBIIIAVIA compound layer on a base by forming a precursor layer on the base through electrodepositing three different films, and then reacting the precursor layer with selenium to form the Group IBIIIAVIA compound layer on the base. The three films, described by the precursor layer, include in one embodiment a first alloy film comprising copper, indium and gallium, a second alloy film comprising copper and selenium formed on the first alloy film; and a selenium film formed on the second alloy film.

Abstract: Metal-clad polymer articles containing structural fine-grained and/or amorphous metallic coatings/layers optionally containing solid particulates dispersed therein, are disclosed. The fine-grained and/or amorphous metallic coatings are particularly suited for strong and lightweight articles, precision molds, sporting goods, automotive parts and components exposed to thermal cycling although the CLTE of the metallic layer and the one of the substrate is mismatched. The interface between the metallic layer and the polymer is suitably pretreated to withstand thermal cycling without failure.

Abstract: [Problems] To provide a bath for surface treatment capable of forming a surface-treating film having excellent corrosion resistance by a high-speed electrolytic treatment, and a method of producing a surface-treated steel plate having excellent corrosion resistance and closely adhering property to the coating maintaining good productivity. [Means for Solution] A bath for surface treatment used for forming a surface-treating film on the surface of a steel plate by cathodic electrolysis, the bath for surface treatment containing Zr and/or Ti, and a polycarboxylic acid.

Abstract: The invention relates generally to electrodeposition apparatus and methods. When depositing films via electrodeposition, where the substrate has an inherent resistivity, for example, sheet resistance in a thin film, methods and apparatus of the invention are used to electrodeposit materials onto the substrate by forming a plurality of ohmic contacts to the substrate surface and thereby overcome the inherent resistance and electrodeposit uniform films. Methods and apparatus of the invention find particular use in solar cell fabrication.

Abstract: The present invention relates to an ultra thin copper foil with a very low profile copper foil as a carrier, comprising a carrier foil a release layer and an ultra thin copper foil. The copper foil with the Very Low Profile, smooth on both sides (i.e. VLP copper foil) is used as the carrier foil, the said very low profile copper foil for supporting the ultra thin copper foil can bring advantages of no pinhole, excellent thickness uniformity and low surface roughness. The impact of a release layer on the bond strength between the carrier foil and the ultra thin copper foil is very significant, the release layer is composed of a quaternary metal alloy with peelability.

Abstract: A reaction container for manufacturing a capacitor element, in which the liquid level in each individual chamber (compartment) of a container can be adjusted to the same level, adjustment to achieve uniformity of electrolytic solution in each individual chamber can also be performed, and with which a uniform dielectric layer or a uniform semiconductor layer can be formed with respect to a plurality of conductive members in a stable manner while maintaining a constant range of formation thereof. The reaction container (1) for manufacturing a capacitor element includes a container (2) which accommodates electrolytic solution (19) therein, a partitioning frame (3) which can partition the inside of the container (2) into a plurality of individual chambers (9), negative electrode members (6) individually arranged in each of the individual chambers (9), and a constant-current source (7) electrically connected to the cathode members 6.

Abstract: The present invention relates to a Printed Circuit Board (PCB), and, more particularly, to a printed circuit board in which a special-purpose dot circuit and an external circuit are simultaneously formed in order to improve electrical efficiency, for example by decreasing impedance and electromagnetic waves, and a method of manufacturing the same.

Abstract: Processes are provided herein for the fabrication of MEMS utilizing both a primary metal that is integrated into the final MEMS structure and two or more sacrificial secondary metals that provide structural support for the primary metal component during machining. A first secondary metal is thinly plated around the primary metal and over the entire surface of the substrate without using photolithography. A second secondary metal, is then thickly plated over the deposited first secondary metal without using photolithography. Additionally, techniques are disclosed to increase the deposition rate of the first secondary metal between primary metal features in order to prevent voiding and thus enhance structural support of the primary metal during machining.

Abstract: Multi-layer fabrication methods (e.g. electrochemical fabrication methods) for forming microscale and mesoscale devices or structures (e.g. turbines) provide bushings or roller bearing that allow rotational or linear motion which is constrained by multiple structural elements spaced from one another by gaps that are effectively less than minimum features sizes associated with the individual layers used to form the structures. In some embodiments, features or protrusions formed on different layers on opposing surfaces are offset along the axis of layer stacking so as to bring the features into positions that are closer than allowed by the minimum features sizes associated with individual layers. In other embodiments, interference is used to create effective spacings that are less than the minimum features sizes.

Abstract: A method of making a housing, comprising the steps of: providing a transparent plastic substrate, the substrate having an outer surface and an inner surface; coating at least portions of the outer surface with a photosensitizer; activating the substrate by using an energy ray to irradiate areas of the outer surface covered with the photosensitizer to form a conductive medium layer thereon; electroplating the activated substrate, an electroplated coating formed on the irradiated area in a predetermined pattern; forming an electrophoretic coating on the surface of the electroplated coating by an electrophoresis process; and forming a paint coating on the inner surface of the substrate. A housing made by the present method is provided.

Abstract: A method and apparatus for forming a reliable and cost efficient battery or electrochemical capacitor electrode structure that has an improved lifetime, lower production costs, and improved process performance are provided. In one embodiment a method for forming a three dimensional porous electrode for a battery or an electrochemical cell is provided. The method comprises depositing a columnar metal layer over a substrate at a first current density by a diffusion limited deposition process and depositing three dimensional metal porous dendritic structures over the columnar metal layer at a second current density greater than the first current density.

Abstract: Methods for producing a high temperature oxidation resistant coating on a superalloy component and the coated superalloy component produced thereby are provided. Aluminum or an aluminum alloy is applied to at least one surface of the superalloy component by electroplating in an ionic liquid aluminum plating bath to form a plated component. The plated component is heat treated at a first temperature of about 600° C. to about 650° C. and then further heat treated at a second temperature of about 700° C. to about 1050° C. for about 0.50 hours to about two hours or at a second temperature of about 750° C. to about 900° C. for about 12 to about 20 hours.

Abstract: Methods of fabricating a chamber component capable of being exposed to a plasma in a process chamber includes: providing a component structure composed of metal; immersing the surface of the component structure in an electroplating bath comprising first metal electrolyte species and second metal electrolyte species; forming a cathode by connecting the component structure to a negative terminal of a voltage source; immersing in the electroplating bath, an anode comprising an inert material or material to be electroplated, and connecting the anode to a positive terminal of the voltage source; and electroplating a layer having a concentration gradient of the first metal, second metal, or both.

Abstract: An apparatus for continuous simultaneous electroplating of two metals having substantially different standard electrodeposition potentials (e.g., for deposition of Sn—Ag alloys) comprises an anode chamber for containing an anolyte comprising ions of a first, less noble metal, (e.g., tin), but not of a second, more noble, metal (e.g., silver) and an active anode; a cathode chamber for containing catholyte including ions of a first metal (e.g., tin), ions of a second, more noble, metal (e.g., silver), and the substrate; a separation structure positioned between the anode chamber and the cathode chamber, where the separation structure substantially prevents transfer of more noble metal from catholyte to the anolyte; and fluidic features and an associated controller coupled to the apparatus and configured to perform continuous electroplating, while maintaining substantially constant concentrations of plating bath components for extended periods of use.

Abstract: Embodiments described herein generally relate to methods and apparatus for forming an electrode structure used in an energy storage device. More particularly, embodiments described herein relate to methods and apparatus for characterizing nanomaterials used in forming high capacity electrode structures for energy storage devices. In one embodiment a process for forming an electrode structure for an energy storage device is provided. The process comprises depositing a columnar metal structure over a substrate at a first current density by a diffusion limited deposition process, measuring a capacitance of the columnar metal structure to determine a surface area of the columnar metal structure, and depositing three dimensional porous metal structures over the columnar metal structure at a second current density greater than the first current density.

Abstract: In an alloy coating film having a diffusion barrier layer and an aluminum reservoir layer on a substrate, the diffusion barrier layer is composed of a single phase that is a Re—Cr—Ni—Al system ? phase containing Al by less than 1 atomic %, or composed of a first phase which is the Re—Cr—Ni—Al system ? phase and one or more second phases selected from a ? phase, ?? phase and ? phase.

Abstract: In a through hole closing process, a metal plate is attached to one surface of a conductive base member having a plurality of through holes by the use of a magnet, in a copper plating process, a copper plating layer is formed on the conductive base member and the metal plate exposed within the through holes, from the side of the conductive base member where the metal plate is not attached, thereby to fill up the through holes, in a film forming process, a Pd alloy film is formed by plating on the surface of the conductive base member after removal of the metal plate, and in a removal process, the copper plating layer is removed by selective etching, thereby to produce a hydrogen production filter that is used in a reformer of a fuel cell so as to be capable of stably producing high purity hydrogen gas.

Abstract: Described herein are electrodeposited corrosion-resistant multilayer coating and claddings that comprises multiple nanoscale layers that periodically vary in electrodeposited species or electrodeposited microstructures. The coatings may comprise electrodeposited metals, ceramics, polymers or combinations thereof. Also described herein are methods for preparation of the coatings and claddings.

Abstract: A swage mount that includes a flange, having a first side and a second side, and a cylindrically shaped hub. The hub is primarily comprised of a metal (such as stainless steel), and extends from the second side of the flange, and has an inner surface and an outer surface. The surface of the swage mount is plated with one or more layers of metal, or a combination of metals, which provide a) increased retention torque, and b) increased part cleanliness. This invention may be used in conjunction with surface hardened swage mounts that contain surface protrusions. In this case the metal plating prevents separation of the protrusions from the swage mount, thereby preventing contamination.

Abstract: A silver electroplating solution is used to electroplate a mirror bright silver layer on a nickel or nickel alloy substrate. The silver electroplating solution is cyanide-free and environmentally friendly.

Abstract: The disclosure relates generally to semiconductor device fabrication, and more particularly to methods of electroplating used in semiconductor device fabrication. A method of electroplating includes: immersing an in-process substrate into an electrolytic plating solution to form a first metal layer on the in-process substrate; then performing a first chemical-mechanical polish to a liner on the in-process substrate followed by immersing the in-process substrate into the electrolytic plating solution to form a second metal layer on the first metal layer and the liner; and performing a second chemical-mechanical polish to the liner.

Abstract: Techniques for electrodepositing selenium (Se)-containing films are provided. In one aspect, a method of preparing a Se electroplating solution is provided. The method includes the following steps. The solution is formed from a mixture of selenium oxide; an acid selected from the group consisting of alkane sulfonic acid, alkene sulfonic acid, aryl sulfonic acid, heterocyclic sulfonic acid, aromatic sulfonic acid and perchloric acid; and a solvent. A pH of the solution is then adjusted to from about 2.0 to about 3.0. The pH of the solution can be adjusted to from about 2.0 to about 3.0 by adding a base (e.g., sodium hydroxide) to the solution. A Se electroplating solution, an electroplating method and a method for fabricating a photovoltaic device are also provided.

Abstract: Disclosed is a multilayer alloy coating film capable of maintaining heat resistance, high-temperature oxidation resistance and creep resistance for a long time even in an ultra high temperature environment. The multilayer alloy coating film comprises a barrier layer formed on a base surface, and an aluminum reservoir layer formed on the barrier layer and composed of an alloy containing Al. The barrier layer comprises an inner sacrificial barrier layer composed of an alloy containing Re, an inner stabilization layer formed on the inner sacrificial barrier layer, a diffusion barrier layer formed on the inner stabilization layer and composed of an alloy containing Re, an outer stabilization layer formed on the diffusion barrier layer, and an outer sacrificial barrier layer formed on the outer stabilization layer and composed of an alloy containing Re.

Abstract: Photovoltaic devices and methods for preparing a p-type semiconductor layer for the photovoltaic devices generally include electroplating a layer of gallium or a gallium alloy onto a conductive layer by contacting the conductive layer with a plating bath free of complexing agents including a gallium salt, methane sulfonic acid or sodium sulfate and an organic additive comprising at least one nitrogen atom and/or at least one sulfur atom, and a solvent; adjusting a pH of the solution to be less than 2.6 or greater than 12.6. The photovoltaic device includes an impurity in the p-type semiconductor layer selected from the group consisting of arsenic, antimony, bismuth, and mixtures thereof. Various photovoltaic precursor layers for forming CIS, CGS and CIGS p-type semiconductor structures can be formed by electroplating the gallium or gallium alloys in this manner. Also disclosed are processes for forming a thermal interface of gallium or a gallium alloy with the electroplating process.

Abstract: A perpendicular magnetic read head having a balanced capacitive coupling with the substrate. The read head includes a magnetoresistive sensor with first and second magnetic, electrically conductive shields separated from a substrate by a layer of non-magnetic, electrically insulating material. A dummy magnetic shield is formed on the non-magnetic electrically insulating layer and is electrically connected with the second magnetic, electrically conductive shield. The dummy shield is formed to have a capacitive coupling with the substrate that matches the capacitive coupling of the first magnetic, electrically conductive shield with the substrate.

Abstract: A structure and method of making a thin-film solar cell. A thin-film solar cell includes a substrate, absorber layer and a buffer layer. The absorber layer is deposited by a single-step bulk electrochemical process, or a multi-layer electrochemical process. The buffer layer is deposited by an electrochemical deposition process such as a multi-layer deposition or an atomic layer deposition. The absorber and buffer layers are non-toxic materials which can include sulfur incorporated during the deposition process or incorporated after deposition by an anneal step.

Abstract: A method includes providing a voltage switchable dielectric material having a characteristic voltage, exposing the voltage switchable dielectric material to a source of ions associated with an electrically conductive material, and creating a voltage difference between the source and the voltage switchable dielectric material that is greater than the characteristic voltage. Electrical current is allowed to flow from the voltage switchable dielectric material, and the electrically conductive material is deposited on the voltage switchable dielectric material. A body comprises a voltage switchable dielectric material and a conductive material deposited on the voltage switchable dielectric material using an electrochemical process. In some cases, the conductive material is deposited using electroplating.

Abstract: A metallic material for a connecting part, having a rectangular wire material of copper or a copper alloy as a base material, and formed at an outermost surface thereof, a copper-tin alloy layer substantially composed of copper and tin, wherein the copper-tin alloy layer of the outermost surface further contains at least one selected from the group consisting of zinc, indium, antimony, gallium, lead, bismuth, cadmium, magnesium, silver, gold, and aluminum, in a total amount of 0.01% or more and 1% or less in terms of mass ratio with respect to the content of the tin.

Abstract: A composition for metal surface treatment capable of forming films and imparting excellent corrosion resistance in relation to metallic materials, in particular, metal formations having complex shapes through a single dipping step. A composition for metal surface treatment contains 5 to 30% by weight of a nonionic and/or cationic water-based resin, 100 to 1,000 ppm of trivalent Bi ions and an aminopolycarboxylic acid at 0.5 to 10 times in molar concentration based on the Bi ions.

Abstract: The invention relates generally to electrodeposition apparatus and methods. When depositing films via electrodeposition, where the substrate has an inherent resistivity, for example, sheet resistance in a thin film, methods and apparatus of the invention are used to electrodeposit materials onto the substrate by forming a plurality of ohmic contacts to the substrate surface and thereby overcome the inherent resistance and electrodeposit uniform films. Methods and apparatus of the invention find particular use in solar cell fabrication.

Abstract: A multi step process, which forms a Group VIA material layer, such as a selenium (Se) layer, having a thickness greater than 500 nanometers. The process includes electroplating a Se material layer, which has an amorphous micro-structure and which exhibits high electrical resistivity, on a workpiece and subsequently annealing the Se layer. Annealing process transforms the amorphous structure of the Se layer into a crystalline structure which is conductive. After the annealing, another Se layer can be electroplated onto the annealed Se layer. The electroplating and annealing steps can be repeated until the desired Se layer thickness is reached.

Abstract: An apparatus and method is disclosed for simultaneously electroplating at least two parts in a series electrical configuration in an electroplating system using a shared electrolyte with excellent consistency in thickness profiles, coating weights and coating microstructure. Parts in high volume and at low capital and operating cost are produced as coatings or in free-standing form.

Abstract: An electrochemical deposition method and electrolyte to plate uniform, defect free and smooth gallium films are provided. In a preferred embodiment, the electrolyte may include a solvent that comprises water and at least one monohydroxyl alcohol, a gallium salt, and an acid to control the solution pH and conductivity. The method electrodeposits a gallium film possessing sub-micron thickness on a conductive surface. Such gallium layers are used in fabrication of semiconductor and electronic devices such as thin film solar cells.

Abstract: A material for electric sliding contact comprising, on a conductive substrate, a first layer composed of a noble metal or an alloy comprising the noble metal as a major component with an arithmetic average roughness Ra of (A) ?m and, as an upper layer of the first layer, a second layer composed of a noble metal or an alloy comprising the noble metal as a major component with a covering thickness of from 0.001×(A) ?m or more to (A) ?m or less, wherein the noble metal forming the second layer or the noble metal as a major component of the alloy forming the second layer is a different element from the noble metal forming the first layer or the noble metal as a major component of the alloy forming the first layer.

Abstract: Disclosed herein are a probe and a method of making the same, and more particularly to a probe having a minute pitch, with which a probe card corresponding to arrangement of pads formed with a massed shape or other various shapes on a wafer is made, and a method of making the same. The probe having a prescribed thickness and formed in the shape of a flat plate. The probe comprises a body part bent at the middle thereof so that the body part is elastically tensioned or compressed when a tension force or a compression force is applied to the body part at the upper and lower ends thereof, a connection part integrally formed with the lower end of the body part, the connection part being fixed to a substrate, and a tip part integrally formed with the upper end of the body part, the tip part contacting a pad of an element.

Abstract: An electroplating method that includes: a) contacting a first substrate with a first article, which includes a substrate and a conformable mask disposed in a pattern on the substrate; b) electroplating a first metal from a source of metal ions onto the first substrate in a first pattern, the first pattern corresponding to the complement of the conformable mask pattern; and c) removing the first article from the first substrate, is disclosed. Electroplating articles and electroplating apparatus are also disclosed.

Abstract: A process for the manufacture of a metallic seal comprising applying a first intermediate layer to a base metal, applying a second intermediate layer overlying the first intermediate layer, applying a first coating layer comprising silver overlying the second intermediate layer, applying a second coating layer comprising indium overlying the first coating layer, baking the base metal with applied intermediate and coating layers at a temperature to diffuse the coating layers to form a silver indium alloy coating layer. A seal comprising a substrate having a metal surface, a first intermediate layer overlying the base metal, a second intermediate layer overlying the first intermediate layer, an alloy coating layer overlying the second intermediate layer, wherein the alloy coating layer comprises a silver indium alloy.

Abstract: A method of making property modulated composite materials includes depositing a first layer of material having a first microstructure/nanostructure on a substrate followed by depositing a second layer of material having a second microstructure/nanostructure that differs from the first layer. Multiple first and second layers can be deposited to form a composite material that includes a plurality of adjacent first and second layers. By controlling the microstructure/nanostructure of the layers, the material properties of the composite material formed by this method can be tailored for a specific use. The microstructures/nanostructures of the composite materials may be defined by one or more of grain size, grain boundary geometry, crystal orientation, and a defect density.

Abstract: By providing two or more consumable electrodes within a single reactor vessel, an alloy having a high degree of chemical ordering may be deposited in situ in that the current flows of the individual consumable electrodes are controlled to obtain a substantially layered deposition of the two or more metals. Hence, especially in copper-based metallization layers, the advantage of enhanced resistance against electromigration offered by alloys may be achieved without unduly reducing the overall conductivity.

Abstract: An electroplating method that includes: a) contacting a first substrate with a first article, which includes a substrate and a conformable mask disposed in a pattern on the substrate; b) electroplating a first metal from a source of metal ions onto the first substrate in a first pattern, the first pattern corresponding to the complement of the conformable mask pattern; and c) removing the first article from the first substrate, is disclosed. Electroplating articles and electroplating apparatus are also disclosed.

Abstract: A tin-plated steel sheet includes a steel sheet; an Sn-containing plating layer in which the mass per unit area of Sn is 0.05 to 20 g/m2 disposed on at least one surface of the steel sheet; a first chemical conversion coating which contains P and Sn, in which the mass per unit area of P is 0.3 to 10 mg/m2, disposed on the Sn-containing plating layer; and a second chemical conversion coating which contains P and Al, in which the mass per unit area of P is 1.2 to 10 mg/m2 and the mass per unit area of Al is 0.24 to 8.7 mg/m2, disposed on the first chemical conversion coating.

Abstract: A metal film-forming method is capable of forming a metal film on a surface of a base metal film, formed on a surface of a substrate, with sufficient adhesion to the base metal film even when a natural oxide film is formed on the surface of the base metal film. The metal film-forming method includes: preparing a substrate having a base metal film formed on a surface; and carrying out electroplating of the substrate using the base metal film as a cathode and another metal as an anode while immersing the substrate in a solution containing a metal complex and a reducing material, both dissolved in a solvent, to form a metal film, deriving from a metal contained in the metal complex, on the surface of the base metal film.

Abstract: Electrochemical fabrication processes and apparatus for producing single layer or multi-layer structures where each layer includes the deposition of at least two materials and wherein the formation of at least some layers includes operations for reducing stress and/or curvature distortion when the structure is released from a sacrificial material which surrounded it during formation and possibly when released from a substrate on which it was formed. Six primary groups of embodiments are presented which are divide into eleven primary embodiments. Some embodiments attempt to remove stress to minimize distortion while others attempt to balance stress to minimize distortion.

Abstract: A method for manufacturing a magnetic write head that has a trailing magnetic shield with a tapered write pole trailing edge, a non-magnetic step layer and a Ru bump and an alumina bump formed at the front of the non-magnetic step layer. The process forms a Ru/alumina side wall at the sides of the write pole, such that the Ru side wall is closest to the write pole. The Ru is removed more readily than the alumina during the ion milling that is performed to taper the write pole. This causes the Ru portion of the side wall to taper away from the write pole rather than forming an abrupt step. This tapering prevents dishing of the trailing edge of the write pole for improved write head performance.

Abstract: Some embodiments of the invention are directed to electrochemical fabrication methods for forming structures or devices (e.g. microprobes for use in die level testing of semiconductor devices) from a core material and a shell or coating material that partially coats the surface of the structure. Other embodiments are directed to electrochemical fabrication methods for producing structures or devices (e.g. microprobes) from a core material and a shell or coating material that completely coats the surface of each layer from which the probe is formed including interlayer regions. Additional embodiments of the invention are directed to electrochemical fabrication methods for forming structures or devices (e.g. microprobes) from a core material and a shell or coating material wherein the coating material is located around each layer of the structure without locating the coating material in inter-layer regions.

Abstract: An electrochemical deposition method and electrolyte to plate uniform, defect free and smooth gallium films are provided. In a preferred embodiment, the electrolyte may include a solvent that comprises water and at least one monohydroxyl alcohol, a gallium salt, and an acid to control the solution pH and conductivity. The method electrodeposits a gallium film possessing sub-micron thickness on a conductive surface. Such gallium layers are used in fabrication of semiconductor and electronic devices such as thin film solar cells.