Abstract: An etching method that uses an etch reactant retained within at least a semi-solid media (120, 220, 224, 230). The etch reactant media is applied to selectively etch a surface layer (106, 218, 222). The etch reactant media may be applied to remove metal shorts (222), smearing and eaves resulting from CMP or in failure analysis for uniform removal of a metal layer (218) without damaging the vias, contact, or underlying structures.

Abstract: According to one embodiment, a method of manufacturing a magnetic recording medium includes forming a first hard mask, a second hard mask and a resist on a magnetic recording layer, imprinting a stamper to the resist to transfer patterns of protrusions and recesses to the resist, removing residues remaining in the recesses of the patterned resist, etching the second hard mask by using the patterned resist as a mask to transfer the patterns of protrusions and recesses to the second hard mask, etching the first hard mask by using the second hard mask as a mask to transfer the patterns of protrusions and recesses to the first hard mask, removing the second hard mask remaining on the protrusions of the first hard mask, and deactivating the magnetic recording layer exposed in the recesses by means of ion beam irradiation.

Abstract: A method of etching a material that includes comprising germanium, antimony, and tellurium encompasses exposing said material to a plasma-enhanced etching chemistry comprising Cl2 and CH2F2. A method of forming a variable resistance memory cell includes forming a conductive inner electrode material over a substrate. A variable resistance chalcogenide material comprising germanium, antimony, and tellurium is formed over the conductive inner electrode material. A conductive outer electrode material is formed over the chalcogenide material. The germanium, antimony, and tellurium-comprising material is plasma etched using a chemistry comprising Cl2 and CH2F2.

Abstract: A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.

Abstract: The method for forming wiring includes: laminating a thermosetting resin film and a metallic foil on an insulating substrate where base-layer wiring is formed, a mat surface of the metallic foil facing the resin film, pressing the film and the foil with application of heat; forming an opening in the metallic foil to expose a part of the insulating resin layer in which a via hole is to be formed; forming the via hole in the insulating resin layer by using as a mask the metallic foil; performing a desmear process of the via hole via the opening of the metallic foil; removing the metallic foil; forming an electroless-plated layer that covers the top surface of the insulating resin layer, a side surface of the via hole and a top surface of the base-layer wiring; and forming wiring including an electroplated layer on the electroless-plated layer.

Abstract: Disclosed are medical devices having textured surfaces and related methods for texturing. Methods of surface texturing using gas-phase plasma provide medical devices with myriad complex surface morphologies.

Abstract: A method of plasma etching transition metal oxide thin films using carbon monoxide as the primary source gas. This permits carbonyl chemistries to be used at ambient temperature, without heating.

Abstract: Methods for etching a metal layer using an imprinted resist material are provided. In one embodiment, a method for processing a photolithographic reticle includes providing a reticle having a metal photomask layer formed on an optically transparent substrate and an imprinted resist material deposited on the metal photomask layer, etching recessed regions of the imprinted resist material to expose portions of the metal photomask layer in a first etching step, and etching the exposed portions of the metal photomask layer through the imprinted resist material in a second etching step, wherein at least one of the first or second etching steps utilizes a plasma formed from a processing gas comprising oxygen, halogen and chlorine containing gases. In one embodiment, the process gas is utilized in both the first and second etching steps. In another embodiment, the first and second etching steps are performed in the same processing chamber.

Abstract: A method for manufacturing a thin film magnetic head includes a step for forming an MR layered body; a step for forming a first sacrificial layer made of material removable by wet etching, and subsequently, forming a cap layer on the upper surface of the first sacrificial layer; further, a step for patterning the MR layered body and the cap layer and then filling part of the removed areas of the MR layered body and the cap layer with a bias magnetic layer and the remaining with insulating layers; a step for removing the cap layer by dry etching and, subsequently, removing the first sacrificial layer by wet etching; and a step for forming a second shield layer above the MR layered body and the bias magnetic layer.

Abstract: Example methods may provide a thin film etching method. Example thin film etching methods may include forming a Ga—In—Zn—O film on a substrate, forming a mask layer covering a portion of the Ga—In—Zn—O film, and etching the Ga—In—Zn—O film using the mask layer as an etch barrier, wherein an etching gas used in the etching includes chlorine. The etching gas may further include an alkane (CnH2n+2) and H2 gas. The chlorine gas may be, for example, Cl2, BCl3, and/or CCl3, and the alkane gas may be, for example, CH4.

Abstract: A method of plasma doping includes providing a dopant gas comprising a dopant heavy halogenide compound gas to a plasma chamber. A plasma is formed in the plasma chamber with the dopant heavy halogenide compound gas and generates desired dopant ions and heavy fragments of precursor dopant molecule. A substrate in the plasma chamber is biased so that the desired dopant ions impact the substrate with a desired ion energy, thereby implanting the desired dopant ions and the heavy fragments of precursor dopant molecule into the substrate, wherein at least one of the ion energy and composition of the dopant heavy halogenide compound is chosen so that the implant profile in the substrate is substantially determined by the desired dopant ions.

Abstract: A technique is provided for forming a molecule or an array of molecules having a defined orientation relative to the substrate or for forming a mold for deposition of a material therein. The array of molecules is formed by dispersing them in an array of small, aligned holes (nanopores), or mold, in a substrate. Typically, the material in which the nanopores are formed is insulating. The underlying substrate may be either conducting or insulating. For electronic device applications, the substrate is, in general, electrically conducting and may be exposed at the bottom of the pores so that one end of the molecule in the nanopore makes electrical contact to the substrate. A substrate such as a single-crystal silicon wafer is especially convenient because many of the process steps to form the molecular array can use techniques well developed for semiconductor device and integrated-circuit fabrication.

Abstract: In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

Abstract: A light emitting device may include an n-clad layer formed on a crystalline wafer; a porous layer formed by processing the n-clad layer in a mixed gas atmosphere of HCl and NH3. The light emitting device may further include an active layer and a p-clad layer formed on the porous layer.

Abstract: Methods for resputtering and plasma etching include an operation of generating an ultra-high density plasma using an ultra-high magnetic field. For example, a plasma density of at least about 1013 electrons/cm3 is achieved by confining a plasma using a magnetic field of at least about 1 Tesla. The ultra-high density plasma is used to create a high flux of low energy ions at the wafer surface. The formed high density low energy plasma can be used to sputter etch a diffusion barrier or a seed layer material in the presence of an exposed low-k dielectric layer. For example, a diffusion barrier material can be etched with a high etch rate to deposition rate (E/D) ratio (e.g., with E/D>2) without substantially damaging an exposed dielectric layer. Resputtering and plasma etching can be performed, for example, in iPVD and in plasma pre-clean tools, equipped with magnets configured for confining a plasma.

Abstract: Certain example embodiments of this invention relate to the use of graphene as a transparent conductive coating (TCC). In certain example embodiments, graphene thin films grown on large areas hetero-epitaxially, e.g., on a catalyst thin film, from a hydrocarbon gas (such as, for example, C2H2, CH4, or the like). The graphene thin films of certain example embodiments may be doped or undoped. In certain example embodiments, graphene thin films, once formed, may be lifted off of their carrier substrates and transferred to receiving substrates, e.g., for inclusion in an intermediate or final product. Graphene grown, lifted, and transferred in this way may exhibit low sheet resistances (e.g., less than 150 ohms/square and lower when doped) and high transmission values (e.g., at least in the visible and infrared spectra).

Abstract: Patterned magnetic recording media and associated methods of fabrication are described. The patterned magnetic recording media includes a perpendicular magnetic recording layer that is patterned into a plurality of discrete magnetic islands. The patterned magnetic recording media also includes an exchange bridge structure formed from magnetic material that connects the islands of the perpendicular magnetic recording layer. Connecting the islands with magnetic material increases exchange coupling between the islands, which makes the islands more magnetically stable.

Abstract: The present invention is an etching method for performing an etching process in the presence of a plasma on an object to be processed in which a layer to be etched made of a tungsten-containing material is formed on a base layer made of a silicon-containing material in a process vessel capable of being evacuated to create therein a vacuum, wherein a chlorine-containing gas, an oxygen-containing gas, and a nitrogen-containing gas are used as an etching gas for performing the etching process.

Abstract: Formation of a bottom electrode for an MTJ device on a silicon nitride substrate is facilitated by including a layer of ruthenium near the silicon nitride surface. The ruthenium is a good electrical conductor and it responds differently from Ta and TaN to certain etchants. Adhesion to SiN is enhanced by using a TaN/NiCr bilayer as “glue”. Thus, said included layer of ruthenium may be used as an etch stop layer during the etching of Ta and/or TaN while the latter materials may be used to form a hard mask for etching the ruthenium without significant corrosion of the silicon nitride surface.

Abstract: A method of making a microstructure with thin wall portions (T1-T3) includes a step of performing a first etching process to a material substrate having a laminate structure including a first conductive layer (11) and a second conductive layer (12) having a thickness of the thin wall portions (T1-T3), where the etching is performed from the side of the first conductive layer (11) thereby forming in the second conductive layer (12) pre thin wall portions (T1?-T3?) which has a pair of side surfaces apart from each other in an in-plane direction of the second conductive layer (12) and contact the first conductive layer (11). The method also includes a step of performing a second etching process from the side of the first conductive layer (11) for removing part of the first conductive layer (11) contacting the pre thin wall portions (T1?-T3?) to form the thin wall portions.

Abstract: A method for manufacturing a magnetic layer with a magnetic anisotropy. The method includes an endpoint detection process for determining an end point to carefully control the final thickness of the magnetic layer. The method includes depositing a magnetic layer and then depositing a sacrificial layer over the magnetic layer. A low power angled ion milling is then performed until the magnetic layer has been reached. The angled ion milling can be performed at an angle relative to normal and without rotation in order to form an anisotropic surface texture that induces a magnetic anisotropy in the magnetic layer. An indicator layer may be included between the magnetic layer and the sacrificial layer in order to further improve endpoint detection.

Abstract: A method of etching a material that includes comprising germanium, antimony, and tellurium encompasses exposing said material to a plasma-enhanced etching chemistry comprising Cl2 and CH2F2. A method of forming a variable resistance memory cell includes forming a conductive inner electrode material over a substrate. A variable resistance chalcogenide material comprising germanium, antimony, and tellurium is formed over the conductive inner electrode material. A conductive outer electrode material is formed over the chalcogenide material. The germanium, antimony, and tellurium-comprising material is plasma etched using a chemistry comprising Cl2 and CH2F2.

Abstract: A method and system of etching a metal nitride, such as titanium nitride, is described. The etching process comprises introducing a process composition having a halogen containing gas, such as Cl2, HBr, or BCl3, and a fluorocarbon gas having the chemical formula CxHyFz, where x and z are equal to unity or greater and y is equal to 0 or greater.

Abstract: A method and apparatus for anisotropically etching a recess in a silicon substrate is disclosed. Generally, a plasma is used for energetic excitation of a reactive etching gas, wherein the reactive etching gas is a constituent of a continuous gas flow. A recess is anisotropically etched in a silicon substrate using the reactive etching gas, during which time the recess id deepened by at least fifty micrometers without interrupting the gas flow of the reactive etching gas.

Abstract: A substance including tungsten and carbon is etched by using plasma. The plasma is generated from a mixed gas of a gas including a fluorine atom and a gas including a CN bond and a hydrogen atom.

Abstract: A method of manufacturing a semiconductor device includes: forming a mask layer on a layer that is to be subjected to etching and contains at least one of silicon carbonate, silicon oxide, sapphire, gallium nitride, aluminum gallium nitride, indium gallium nitride, and aluminum nitride, the mask layer having an opening and including a nickel chrome film, a gold film, and a nickel film in this order when seen from the layer to be subjected to etching; and performing etching on the layer to be subjected to etching, with the mask layer serving as a mask.

Abstract: The present invention provides a method for processing a photolithographic substrate within a vacuum chamber. The method comprising the steps of cooling the photolithographic substrate to a target temperature before the photolithographic substrate is processed within the vacuum chamber. At least one processing gas is introduced into the vacuum chamber. After the photolithographic substrate is at the target temperature, a plasma is ignited from the processing gas wherein the photolithographic substrate is processed using the plasma. Upon completion of the processing, the photolithographic substrate is unloaded from the vacuum chamber.

Abstract: The invention relates to a gas for removing deposits by a gas-solid reaction. This gas includes a hypofluorite that is defined as being a compound having at least one OF group in the molecule. Various deposits can be removed by the gas, and the gas can easily be made unharmful on the global environment after the removal of the deposits, due to the use of a hypofluorite. The gas may be a cleaning gas for cleaning, for example, the inside of an apparatus for producing semiconductor devices. This cleaning gas comprises 1-100 volume % of the hypofluorite. Alternatively, the gas of the invention may be an etching gas for removing an unwanted portion of a film deposited on a substrate. The unwanted portion can be removed by this etching gas as precisely as originally designed, due to the use of a hypofluorite. The invention further relates to a method for removing a deposit by the gas.

Abstract: A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the formation of a cap layer and the formation of gaps into which high density plasma chemical vapor deposition (HDPCVD) dielectric material is deposited. First and second antireflective coatings may be formed on the wiring line layer, the first and second antireflective coatings being made from different materials. Both antireflective coatings and the wiring line layer are etched through to form wiring lines separated by gaps. The gaps between wiring lines may be filled using high density plasma chemical vapor deposition.

Abstract: This invention provides a manufacturing method of a molded glass object in which generation of defects such as dents and wrinkles due to catching of ambient gas between a molten glass drop and an upper mold is restrained in the case of manufacturing a molded glass object by press-molding of a dropped molten glass drop, and a manufacturing method of an upper mold for the manufacturing method of a molded grass object. A molten glass drop is press-molded by use of an upper mold having been subjected to a roughening treatment to roughen the surface on the molding surface to compress the molten glass drop.

Abstract: An optical element manufacturing method includes: disposing a light-shielding layer (14) that includes at least an Si layer as an uppermost layer, on a substrate (12) used as a base member, forming an optical aperture (14a) at the light-shielding layer (14) and forming a fine recession/projection structure (MR) at a surface of the uppermost layer through dry etching.

Abstract: Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a substrate including positioning a substrate having a metal layer disposed on an optically transparent material in a processing chamber, introducing a processing gas processing gas comprising an oxygen containing gas, a chlorine containing gas, and a chlorine-free halogen containing gas, and optionally, an inert gas, into the processing chamber, generating a plasma of the processing gas in the processing chamber, and etching exposed portions of the metal layer disposed on the substrate.

Abstract: A method for the production of a structured metal layer (7) made from an alloy composed of titanium and nickel includes the following process steps: a sacrificial layer composite (3) is provided, which comprises a second sacrificial layer (2) applied onto a first sacrificial layer (1), the first sacrificial layer (1) is subjected for the purpose of structuring to a wet-chemical etching process in such a manner that undercutting of the sacrificial layer (1) occurs, a metal layer (7) of the alloy is applied indirectly or directly to the structured sacrificial layer composite (3). The first sacrificial layer (1) is at a greater distance from the metal layer (7). The second sacrificial layer (2) facing the metal layer (7) to be deposited is subjected to a dry etching process prior to wet-chemical etching of the first sacrificial layer (1) so that the second sacrificial layer (2) is provided with a structure that corresponds to the desired structure of the metal layer (7).

Abstract: The invention relates to a method that involves (a) removing graphite from at least one surface of a metal graphite composite material; (b) chemically cleaning or plasma etching the surface of the metal graphite composite material; (c) applying a metal-containing material to the surface of the chemically cleaned or plasma etched metal graphite composite material, and thereby forming an intermediate layer; (d) applying a metal coating on the intermediate layer, and thereby forming a composite material. The invention also relates to a composite material comprising (a) a metal graphite composite substrate having at least one surface that is substantially free of graphite; (b) a metal-containing intermediate layer located on a surface of the substrate; and (c) a metal coating on the intermediate layer.

Abstract: A silicon oxide layer is formed by oxidation or decomposition of a silicon precursor gas in an oxygen-rich environment followed by annealing. The silicon oxide layer may be formed with slightly compressive stress to yield, following annealing, an oxide layer having very low stress. The silicon oxide layer thus formed is readily etched without resulting residue using HF-vapor.

Abstract: According to one embodiment, a method of forming patterns is provided, in which the method including forming a resist on an underlying material, pressing a stamper having patterns of protrusions and recesses, sidewalls of which protrusions are tapered, onto the resist to form a patterned resist having patterns of protrusions and recesses, sidewalls of which protrusions are tapered, forming a protective film on the patterned resist, performing anisotropic etching to leave the protective film on the tapered sidewalls of protrusions of the patterned resist, etching a resist residue remaining in recesses of the patterned resist using the protective film as a mask, and etching the underlying material using the protective film and the patterned resist as a mask.

Abstract: The present invention relates to a method of fabricating a nanogap and a nanogap sensor, and to a nanogap and a nanogap sensor fabricated using the method. The present invention relates to a method of fabricating a nanogap and a nanogap sensor, which can be realized by an anisotropic etching using a semiconductor manufacturing process. According to the method of present invention, the nanogap and nanogap sensor can be simply and cheaply produced in large quantities.

Abstract: A method of forming an aligned connection between a nanotube layer and an etched feature is disclosed. An etched feature is formed having a top and a side and optionally a notched feature at the top. A patterned nanotube layer is formed such that the nanotube layer contacts portions of the side and overlaps a portion of the top of the etched feature. The nanotube layer is then covered with an insulating layer. Then a top portion of the insulating layer is removed to expose a top portion of the etched feature.

Abstract: An object to be processed has a chromium-based thin film made of a material containing chromium. The thin film is etched using a resist pattern as a mask. The thin film is etched by the use of a chemical species produced by preparing a dry etching gas containing a halogen-containing gas and an oxygen-containing gas and supplying a plasma excitation power to the dry etching gas to thereby excite plasma. The thin film is etched using, as the plasma excitation power, a power lower than a plasma excitation power at which plasma density jump occurs.

Abstract: Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a substrate including positioning a substrate having a metal layer disposed on an optically transparent material in a processing chamber, introducing a processing gas processing gas comprising an oxygen containing gas, a chlorine containing gas, and a chlorine-free halogen containing gas, and optionally, an inert gas, into the processing chamber, generating a plasma of the processing gas in the processing chamber, and etching exposed portions of the metal layer disposed on the substrate.

Abstract: The present invention relates to methods for forming thermoelectric and thermodiodic devices including a monolayer of multiple conductive material units with a first surface including a composite of multiple conductive units in electrical contact with a conductive substrate; a second surface with a composite of multiple conductive units; an ioni conductor; and a second surface. A resulting device can include a semiconductor device.

Abstract: A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the formation of a cap layer and the formation of gaps into which high density plasma chemical vapor deposition (HDPCVD) dielectric material is deposited. First and second antireflective coatings may be formed on the wiring line layer, the first and second antireflective coatings being made from different materials. Both antireflective coatings and the wiring line layer are etched through to form wiring lines separated by gaps. The gaps between wiring lines may be filled using high density plasma chemical vapor deposition.

Abstract: A method and control system for treating a hafnium-based dielectric processing system in which a system component of the processing system is exposed to a chlorine-containing gas. A residual hafnium by-product remaining in the processing system after a hafnium removal process is reacted with a chlorine-containing etchant derived from the chlorine-containing gas. A chlorinated hafnium product is volatilized for exhaustion from the processing system. The control system can utilize a computer readable medium to introduce a chlorine-containing gas to the processing system, to adjust at least one of a temperature and a pressure in the processing system to produce from the chlorine-containing gas a chlorine-containing etchant for dissolution of a residual hafnium by-product remaining in the processing system after a hafnium silicate, hafnium oxide, or hafnium oxynitride removal process, and to exhaust a chlorinated hafnium product from the processing system.

Abstract: A reactor for processing semiconductor wafers with electrodes and other surfaces that can be one of heated, textured and/or pre-coated in order to facilitate adherence of materials deposited thereon, and eliminate the disadvantages resulting from the spaulding, flaking and/or delaminating of such materials which can interfere with semiconductor wafer processing.

Abstract: The invention relates to a method for removing an area of a layer of a component consisting of metal or a metal compound. According to prior art, corrosion products of a component are removed in a first step by applying a molten mass or by heating in a voluminous powder bed. This requires high temperatures or a large amount of space. The inventive method for removing corrosion products of a component is characterized in that a cleaning agent is applied locally, which removes the corrosion products by means of a gaseous reaction product.

Abstract: The present invention is to provide a method for making a shadow mask for an opposed discharge plasma display panel by etching one lateral surface of a metal slab to produce a plurality of parallel and equidistant barrier ribs along the vertical and horizontal directions on the lateral surface and a discharging cell by enclosing every four adjacent barrier ribs. A shadow hole is formed at the middle of each discharging cell and etched through the metal slab, and at least one groove interconnected to the shadow holes is produced on another lateral surface of the metal slab by utilizing a rolling process or a stamping process. The adjacent grooves are interconnected with each other, and a plurality of air guide channels is formed on another lateral side, such that a shadow mask can be made in a simple and fast manner, chemical pollutions caused by a traditional double-sided etching can be minimized, and the product yield rate and the manufacturing cost can be effectively improved and lowered.

Abstract: A method and system for selectively and uniformly etching a dielectric layer with respect to silicon and polysilicon in a dry plasma etching system are described. The etch chemistry comprises the use of fluorohydrocarbons, such as CH2F2 and CHF3. High etch selectivity and acceptable uniformity can be achieved by selecting a process condition, including the flow rate of CH2F2 and the power coupled to the dry plasma etching system, such that a proper balance of active etching radicals and polymer forming radicals are formed within the etching plasma.

Abstract: In accordance with the invention, a method for making microfluidic structures in bulk titanium is disclosed. Specific microfluidic structures include HPLC structures.

Abstract: In an ink-jet printhead and a method for manufacturing the same, the ink-jet printhead includes a substrate, an ink chamber to be filled with ink formed on a front surface of the substrate, a manifold for supplying ink to the ink chamber formed on a rear surface of the substrate, and an ink passage in flow communication with the ink chamber and the manifold formed parallel to the front surface of the substrate; a nozzle plate including a plurality of passivation layers formed of an insulating material on the front surface of the substrate, a heat dissipating layer formed of a metallic material, and a nozzle in flow communication with the ink chamber; and a heater and a conductor, the heater being positioned on the ink chamber and heating ink in the ink chamber, and the conductor for applying a current to the heater.

Abstract: A dry etching method in which a plasma of an etching gas is generated and a magnetic material is dry-etched using a mask material made of a non-organic material, wherein an alcohol having at least one hydroxyl group is used as the etching gas. The alcohol used as the etching gas has one hydroxyl group such as an alcohol selected from the group including methanol (CH3OH), ethanol (C2H5OH) and propanol (C3H7OH).