Abstract: A solid state cesium ion gun comprises an ion emission pellet, a pellet heating mechanism, a replaceable ion source unit, ion extraction electrodes, and a self-supporting feedthrough flange. The ion emission pellet is capable of emitting positive cesium ions. One end of the pellet is sputter coated with a thin film of porous tungsten (cathode) from which ions are emitted. The other end of the pellet (anode) is coated with platinum which enables application of a bias to the pellet to direct the cesium ions toward the emitting electrode. The area of the anode electrode determines the life of the ion source. The ion emission pellet is heated to 1000.degree. C. and is not in contact with the beam forming electrode so as to minimize the heat losses. A thin tantalum or molybdenum tube is used to enclose the pellet and minimizes heat conduction losses. The ion gun includes a replaceable ion source unit and a mountable gun unit which mounts extraction electrodes.

Abstract: Ion implantation equipment is modified so as to provide filament reflectors to a filament inside of an arc chamber, and to remove the electrical insulators for the filament outside of the arc chamber and providing a means of shielding, thereby reducing the formation of a conductive layer on said insulators and greatly extending the lifetime and reducing downtime of the equipment. The efficiency of the equipment is further enhanced by means of an interchangeable liner for the arc chamber that increases the wall temperature of the arc chamber and thus the electron temperature. The use of tungsten parts inside the arc chamber, obtained either by making the arc chamber itself or portions thereof of tungsten, particularly the front plate having the exit aperture for the ion beam, or by inserting a removable tungsten liner therein, decreases contamination of the ion beam. Serviceability of the arc chamber is improved by means of a unitary clamp that separately grips both the filament and filament reflectors.

Abstract: A processing method and a processing apparatus realizing the method use a focused ion beam generator. The apparatus includes a plasma or liquid metal ion source producing ions not influencing electric characteristics of a sample, an ion beam generator for extracting ions from the ion source into an ion beam, an ion beam focusing device for focusing the ion beam, an irradiator for irradiating the focused ion beam onto the sample, and a sample chamber in which the sample to be irradiated for processing is installed. The focused ion beam is irradiated onto a sample such as a silicon wafer or device to conduct on a particular position of the sample a fine machining work, a fine layer accumulation, and an analysis.

Abstract: The invention relates to a method and a generator for producing an aluminum ion flow, specifically for aluminum ion implantation in the microelectronics industry.

Abstract: An ion source embodying the present invention is for use in an ion implanter. The ion source comprises a gas confinement chamber having conductive chamber walls that bound a gas ionization zone. The gas confinement chamber includes an exit opening to allow ions to exit the chamber. A base positions the gas confinement chamber relative to structure for forming an ion beam from ions exiting the gas confinement chamber. A gas supply is in communication with the gas confinement chamber for conducting an ionizable gas into the gas confinement chamber. A cathode is supported by the base and positioned with respect to said gas confinement chamber to emit ionizing electrons into the gas ionization zone. The cathode comprises a tubular conductive body that partially extends into the gas confinement chamber and includes a conductive cap that faces into the gas confinement chamber for emitting ionizing electrons into the gas confinement chamber.

Abstract: The invention is directed to a saddle field source for ions or neutral particles which is asymmetrically configured. The saddle field source preferably has three electrodes and has an improved efficiency.

Abstract: A flood beam electron gun is provided for use in remediation of hazardous volatile organic compounds (VOC) contained within a detoxification vessel. The flood beam electron gun comprises an electron emitter having a rounded emitting surface providing a conical electron beam. A control grid is spaced from and disposed substantially parallel to the emitting surface. The control grid has a plurality of holes disposed in a first pattern providing an array of individual electron beams from the conical electron beam of the emitter. An intermediate electrode is spaced from the emitter and the control grid, and has an aperture therethrough providing a substantially parallel flow of the array of individual electron beams. A target grid is spaced from the intermediate electrode and opposite from the cathode and control grid. The target grid has a plurality of holes disposed in a second pattern that is proportional to and substantially larger than the first pattern.

Abstract: An ion trap which operates in the regime between research ion traps which can detect ions with a mass resolution of better than 1:10.sup.9 and commercial mass spectrometers requiring 10.sup.4 ions with resolutions of a few hundred. The power consumption is kept to a minimum by the use of permanent magnets and a novel electron gun design. By Fourier analyzing the ion cyclotron resonance signals induced in the trap electrodes, a complete mass spectra in a single combined structure can be detected. An attribute of the ion trap mass spectrometer is that overall system size is drastically reduced due to combining a unique electron source and mass analyzer/detector in a single device. This enables portable low power mass spectrometers for the detection of environmental pollutants or illicit substances, as well as sensors for on board diagnostics to monitor engine performance or for active feedback in any process involving exhausting waste products.

Abstract: A negative ion beam source includes a heated refractory metal ribbon which is positioned adjacent a beam forming electrode that is, biased to repel positive ions emitted from the metal ribbon. An extraction electrode is juxtaposed to the beam forming electrode and includes an aperture for passing a beam of positive ions generated by the metal ribbon. The extraction electrode includes a cesium chamber with openings that are directed towards the refractory metal ribbon. A heater heats the cesium chamber and causes it to expel cesium neutrals towards a surface of the refractory metal ribbon where the cesium neutrals are ionized to positively charged cesium ions. A target is displaced to one side of a perpendicular from the surface of the refractory metal ribbon and is positioned adjacent a negative ion beam forming electrode that is biased to attract the cesium ion beam and to repel negative ions produced by cesium ion bombardment of the target.

Abstract: The present invention relates to ion emitter tip metals and alloys for ionizing the molecules of a gas which concurrently produces small diameter and very low numbers of unwanted particles. Specifically, the invention discloses ion emitter tip materials which, when subjected to normal operating electrical conditions of between about 0.1 and 100 microamperes per emitter tip, produces about 1 particle or less having a diameter of about 0.5 microns or less per cubic foot. Useful ion emitter tip materials include zirconium, titanium, molybdenum, tantalum, rhenium or alloys of these metals. In a specific embodiment, the metal alloys comprise zirconium and rhenium, titanium and rhenium, molybdenum and rhenium, or tantalum and rhenium. Silicon coated metal emitter tips, particularly titanium-silicon coated are disclosed. The emitter tip materials are useful to obtain Class 1 clean room standards in static air or flowing air environments used, for example, in semiconductor manufacture.

Abstract: The present invention provides an ion-optics system for a source of ions for discharge into gases, the system comprising a screen grid (1) and an accelerator grid (2) constituted by respective frames (3, 4) and respective systems of parallel wires (5, 6) fixed to the frames by means of springs (21), the frames of the grids being assembled to each other via insulators (7) to which they are fixed, the system being provided with a displacement device (9) for adjusting the wires in each of the grids, which device comprising rolls (11) disposed transversely relative to the wires in each grid and offering guide elements (12) in which the wires are placed, the rolls being installed on the frames of the grids with the facility of rotating about their own axes and of changing position in three dimensions together with the wires.

Abstract: A large area ion implantation apparatus which selects ions having predetermined characteristics for implantation. The ions having predetermined characteristics are selected from a plasma contained within a magnetic bottle and heated by a radio frequency source. The selected ions in one embodiment escape from the magnetic bottle and bombard a substrate located external to the magnetic bottle. In another embodiment the selected ions are retained within the magnetic bottle and bombard a substrate which is also located within the bottle. In yet another embodiment of the apparatus, a positive potential on an electrostatic grid located between the substrate and the plasma prevents ions from bombarding a substrate maintained at a negative potential until the potential on the grid is reduced to approximately zero volts.

Abstract: An impulse valve for an ion source is positioned between an ion source chamber and a gas metering valve. The impulse valve is a two-position solenoid-controlled valve which is closed in its off position. In the off-position, the valve forms a reservoir between the valve stem of the impulse valve and the metering orifice of the metering valve. In the off condition, the gas reservoir fills with gas that over time equilibrates to the pressure of the gas supplied to the metering valve. The volume of the gas reservoir and the pressure of the gas which is supplied to the metering valve are chosen so that when the two-position valve is open, the gas contained in the reservoir is sufficient to pressurize the ion source chamber to a pressure of approximately 0.1 Torr. Thus, when the impulse valve opens, a pulse of gas flows into the ion source chamber, where a plasma discharge is initiated.

Abstract: A surface ion source creates a high purity ion beam of molecules of metal compounds having a lower ionization energy than the metal they contain. Low energy dispersion in the ion beam and currents on the order of one ampere are attainable over long duration operation. Rhenium is used in the ion source and related catalyzer. Temperatures vary in the range of 700 to 2500 degrees centigrade and a preferred vacuum pressure of 10.sup.-5 torr, or lower, is used. Wear and corrosion resistance of a wide variety of materials is greatly enhanced through ion deposition and/or implantation with the disclosed apparatus and methods.

Abstract: A structure and method of accurately positioning and aligning an extraction member aperture (arc slit) and an extraction electrode gap with a predetermined beam line in an ion implantation apparatus is disclosed. The extraction member aperture is positioned with respect the ion beam source housing thereby eliminating cumulative tolerance errors which plague prior art ion implantation apparatuses. A removable alignment fixture is used in conjunction with a self-centering clamping assembly to accurately position the extraction member aperture in alignment with the predetermined beam line. The extraction member is secured to a support ring of the clamping assembly and the clamping assembly is mounted to the alignment fixture. The alignment fixture is mounted to the source housing precisely aligning the extraction member aperture with the predetermined beam line. The split ring of the clamping assembly is secured to a support tube surrounding the ion generating arc chamber.

Abstract: A liquid metal ion source (LMIS) has a reservoir for containing an ion material and an emitter disposed in relation to the reservoir such that molten ion material heated in the reservoir wets the surface of the emitter and flows to the emitter apex. Prior to charging the reservoir with the ion material, the reservoir and emitter are cleaned by a high temperature cleaning operation. For cleaning, the LMIS is placed in a vacuum chamber. A current is applied through the electric feed through terminals to heat the reservoir until it becomes red hot. Then, the emitter is heated by electron bombardment by keeping the emitter voltage at ground potential while applying a high negative voltage to the reservoir. After cleaning, the emitter and reservoir are immersed in a liquid ion material contained in the vacuum chamber and maintained in the molten state by a separate melting unit having a heater.

Abstract: A method of charging a fluid beam comprising passing a fluid from an area of first pressure to an area of second pressure, the second pressure being lower than the first pressure, and charging said fluid so that molecules of the fluid may be accelerated in the area of second pressure, so as to form a charged beam, wherein the charging imparts sufficient charge to the fluid as to achieve a charge density greater than 10.sup.14 charge per cm.sup.3 within the fluid.

Abstract: Minute particles are produced by holding charged nucleating particles in an electric field and supplying source particles to the region where the nucleating particles are held. The source particles adhere to the nucleating particles, thus growing minute particles with electric charges. This method permits the production of minute particles which are uniform in their mass and shape or the like. Minute particles having composite structures consisting of different kinds of substances can also be produced.

Abstract: A DC or high frequency ion source comprising a hollow cathode and a substantially hollow anode for applying a DC or alternating voltage; a gas inlet disposed at a first side of the cathode for supplying a discharge gas into the cathode; a cathode heater disposed between the anode and the cathode; a magnet disposed adjacent the anode to thereby improve the uniformity of a plasma; an ion extraction outlet disposed at a second side of the cathode opposite to the gas inlet and having an elongated rectangular shape; and an ion extraction electrode and an acceleration electrode for controlling the energy of extracted ions. Both the anode and cathode comprise substantially hollow boxes. The cathode includes an elongated rectangular cross section and is disposed inside the substantially hollow anode. The ion extraction electrode and the acceleration electrode have an elongated rectangular shape and an opening coextensive with the ion extraction outlet.

Abstract: A negative ion source is constructed to produce H.sup.- ions without using Cesium. A high percentage of secondary electrons that typically accompany the extracted H.sup.- are trapped and eliminated from the beam by permanent magnets in the initial stage of acceleration. Penetration of the magnetic field from the permanent magnets into the ion source is minimized. This reduces the destructive effect the magnetic field could have on negative ion production and extraction from the source. A beam expansion section in the extractor results in a strongly converged final beam.

Abstract: Methods and apparatus for etching ultra fine lines of impurities on semiconductors and other materials. A cold diverging ion beam is generated, made to converge, encoded using a mask to correspond to an image, and then used to etch impurities on the substrate. An ECR plasma source is used to generate a warm plasma. A cooled neutral target gas is penetrated by the warm plasma ions so that the plasma ion charge is transferred to the cool target gas to provide cool ions, which are then extracted to provide a cryogenic ion beam. The ion beam is made converging and then encoded by the mask. The ion beam also may be transformed into an atom beam in a charge exchange cell.

Abstract: A device for optimizing a source of ions with electronic cyclotronic resonance (ECR) is provided. The present invention comprises a conventional ECR source to which an apparatus is added for moving the resonance point (C) which appears in the dielectric pipe when the source is in operation. The controlled adjustment of the position of the resonance point (C) ensures an optimal positioning of points A and B of the equimagnetic surface, points (A) and (B) being dependent on point (C). The resonance displacement apparatus comprises, in one embodiment, a magnetic screw threaded onto its periphery so as to form a screw/nut system with the armouring of the ECR source. Particular utility is found in the area of particle accelerator equipment for use in scientific and medical applications, although other utilities are contemplated.

Abstract: In addition to the three electrodes of a unipotential lens following a plasma chamber, an ion source for ion beam lithography or ion beam semiconductor or the like has a fourth electrode which is at the same potential as the second electrode and at a potential lower than the potential of the first and third electrodes The result is improved resolution.

Abstract: For simplifying the structure of a metal ion source, in particular for imnting into semiconductor wafers small doses of metals which are hard to vaporize, the metal ion source includes an electrically heatable thermionic cathode in the form of a heating wire within an ion chamber, the heating wire being arranged adjacent a metallic component, which consists of the metal intended to give off the metal ions, and being essentially at the potential of the metallic component.

Abstract: An ion processing apparatus for processing a target with ions includes a plasma ion source and a mass spectrometer for producing an ion beam for depositing ions onto the surface of the target to form a thin film or for implanting the ions into the target to modify the composition or properties of the target or for separation and collection of individual, separated isotopes. The plasma ion source is preferably an inductively coupled plasma ion source, and the mass spectrometer is preferably a quadrupole mass spectrometer. The stoichiometry of the deposited or implanted ions can be adjusted by controlling the mass spectrometer to produce an ion beam having a desired composition. Mixtures of different elements can be easily deposited or implanted in any desired stoichiometry by introducing a multielement sample into the plasma ion source and controlling the time the mass spectrometer transmits each element to be deposited or implanted.

Abstract: An apparatus for preparing a sample for analysis by a mass spectrometer system. The apparatus has an entry chamber and an ionization chamber separated by a skimmer. A capacitor having two space-apart electrodes followed by one or more ion-imaging lenses is disposed in the ionization chamber. The chamber is evacuated and the capacitor is charged. A valve injects a sample gas in the form of sample pulses into the entry chamber. The pulse is collimated by the skimmer and enters the ionization chamber. When the sample pulse passes through the gap between the electrodes, it discharges the capacitor and is thereby ionized. The ions are focused by the imaging lenses and enter the mass analyzer, where their mass and charge are analyzed.

Abstract: An ion source generating device having a main arc chamber and an auxiliary chamber attached to and in communication with the main chamber. The auxiliary chamber contains metal chips of barium, calcium or cerium to provide a reduction reaction of feed gas passing through the chamber and into the main chamber, in which ion beams are generated.

Abstract: A plasma mass spectrometer generates an aerosol of a sample, by dissolving the sample in a liquid solvent, and spraying the liquid into a spray chamber via a nebulizer. The solvent condenses in the spray chamber and an aerosol of the sample then passes through a supply tube to a plasma torch. Microwave power from an output on the plasma torch converts the aerosol to a plasma, and the plasma passes to an analyzer. If microwave radiation reached the spray chamber, it would cause heating of the solvent which may evaporate it so that the solvent would be present in the plasma. Therefore, there is a wall between the spray chamber and the plasma torch and microwave output which blocks such microwave radiation.

Abstract: The subject invention teaches the use of mechanical vibration to enhance the electrostatic dispersion of sample solutions into the small, highly charged droplets that can produce ions of solute species for mass spectrometric analysis. Such vibration turns out to be surprisingly effective at ultrasonic frequencies for solutions with flow rates, conductivities and surface tensions too high for stable dispersion by electrostatic forces alone as in conventional electrospray ionization. Several embodiments of the invention are described for purposes of illustration. Other possible embodiments will become apparent to those skilled in the art.

Abstract: Electric discharge gas is made into auxiliary plasma in an electron generating chamber and electrons in the generated auxiliary plasma are introduced into an ion generating chamber. Electrons collide with molecules of material gas in the ion generating chamber to generate primary plasma. Ions in the ion generating chamber are drawn out of the primary plasma through an opening of the ion generating chamber. A magnetic field is formed by electromagnets in order to bring the plasma in the ion generating chamber into a concentrated state. A control unit is provided to store data representing optimum magnetic field intensities for ions of different types involved. The control unit so controls current applied by the power supply for the electromagnets as to produce an optimum magnetic field intensity for the type of ions to be drawn.

Abstract: Apparatus (28) for implanting ions into a target element (26) comprising a circular array of hot cathode, are discharge, ion sources (29) mounted on a rotary carousel (13) or a linear mechanism. An annular rotary support (15) around the carousel supports a plurality of extraction electrodes (18). A housing (20,23) defines an outlet path (32) for the ion beam from the ion source (29). The ion beam is directed through a beam analyzer (24) and through accelaration stages (25) to means (27) for scanning beam relative to the target (26) to be implanted. The carousel (13) and the annual support (15) can both be rotated, so as to bring into cooperating relationship required combinations of ion source (29) and extraction electrode (18).

Abstract: An ion source device includes an electron generating chamber detachably combined with an electron attraction electrode and an ion generating chamber through insulating members. Hooks are projected from both sides of the electron generating chamber. A holder plate is arranged under the ion generating chamber with an insulating member interposed between them. A fixing member is arranged under the holder plate. The fixing member includes a pusher supported by coned disc springs and this pusher of the fixing member is fitted into a recess on the underside of the holder plate and struck against the top of the recess. A pair of holder members are arranged along both sides of the device. The holder members are detachably engaged with the hooks of the electron generating chamber at the upper portion thereof and also detachably engaged with the fixing member at the lower portion thereof.

Abstract: A sample for analysis by Laser Desorption Mass Spectrometry is prepared by dissolving the sample material in a solvent and applying the solution to a matrix material applied to a target for a mass spectrometer. The matrix material is selected from the group consisting of (i) cis-Cinnamic Acid with the aromatic ring substituted by one or more groups which possess an electron pair on the atom adjacent to the ring; (ii) trans-Cinnamic Acid with the aromatic ring substituted by one or more groups which possess an electron pair on the atom adjacent to the ring; (iii) Benzoic Acid, with one or more substituent groups as described in (i); and (iv) Coumarin, with one or more substituent groups as described in (i).

Abstract: Hydrocarbon polymer coatings used in microelectronic manufacturing processes are anisotropically etched by atomic oxygen beams (translational energies of 0.2-20 eV, preferably 1-10 eV). Etching with hyperthermal (kinetic energy>1 eV) oxygen atom species obtains highly anisotropic etching with sharp boundaries between etched and mask-protected areas.

Abstract: Ion implantation equipment is modified so as to provide filament reflectors to a filament inside of an arc chamber, and to remove the electrical insulators for the filament outside of the arc chamber and providing a means of shielding, thereby reducing the formation of a conductive layer on said insulators and greatly extending the lifetime and reducing downtime of the equipment. The efficiency of the equipment is further enhanced by means of an interchangeable liner for the arc chamber that increases the wall temperature of the arc chamber and thus the electron temperature. The use of tungsten parts inside the arc chamber, obtained either by making the arc chamber itself or portions thereof of tungsten, particularly the front plate having the exit aperture for the ion beam, or by inserting a removable tungsten liner therein, decreases contamination of the ion beam. Serviceability of the arc chamber is improved by means of a unitary clamp that separately grips both the filament and filament reflectors.

Abstract: An improved ion source is provided with multiple filaments and wiring for selectively connecting various combinations of filaments to a current source. In one embodiment an additional filament is a spare filament which is connected to the current source when the primary filament burns out. This decreases down time due to filament replacement. In another embodiment, an additional filament operates simultaneously with a primary filament to provide a more homogenous electron cloud and to increase filament life.

Abstract: A plasma processing apparatus includes a filament mounted in an electron generation chamber for producing plasma of a discharge gas, thereby generating electrons. The electrons are supplied from the electron generation chamber into an ion generation chamber through electron passage hole between both chambers to produce plasma of a processing gas inside the ion generation chamber. The chambers are formed of conductive ceramics to constitute electrodes.

Abstract: A depletion mode electron emission apparatus with an electron source including a plurality of preferentially oriented diamond crystallites. Applications employing pluralities of electron sources including preferentially oriented diamond crystallites include image display devices.

Abstract: A gaseous sample that is to be analyzed is passed through an array of fine slits whose edges are covered with electrodes of opposite polarities to which is applied a variable electric potential. The voltage between the electrodes is varied at a programmed rate, so that the gaseous molecules become selectively ionized according to their required ionization energies. Measurement of the ionization current as a function of the voltage between the electrodes yields information about the identities and concentrations of the molecular species that are present in the gas. This selective ionization at atmospheric pressure improves the selectivity and dynamic range of ion mobility spectrometers and is also applicable to mass spectrometry and to improved analyte detection in gas chromatography.

Abstract: An ion engine for the generation of primary plasma by discharge in a gas wherein the discharge is obtained by the simultaneous use of a magnetic conditioning and confinement field and an electromagnetic field. The latter being at a frequency such that the cyclotron resonance effect of the electrons in the gas can be exploited. The engine generates a static magnetic field and generates and applies an electromagnetic field at cyclotron frequency. By using the cyclotron resonance effect, it is possible to improve the processes of plasma generation and the processes of ion beam extraction by the use of an optimized system of grids made of refractory material. These processes are optimized to match the differences in the operating conditions acting on the intensity of the magnetic field.

Abstract: Image source, for converting image data in the form of serial charges into a high-resolution imagewise light pattern, includes a CCD emitter having a semiconductor charge-coupled device (CCD) structure for receiving and transferring the charges, a charge amplification means including a charge-modulated control field effect transistor structure (C-FET), and plural small-scale field emission cells (FEC). The CCD emitter is operable to convert the charges to an imagewise pattern of electron emissions that are directed to a luminescent phosphor layer susceptible to light output according to the impact of the incident electrons. The light output may be directed onto a photosensitive image recording medium to provide means for image recording, or in alternative embodiments, the light output may be viewed directly.

Abstract: There is disclosed an ion mobility detector having a sample inlet membrane means for flowing a sample passing through the membrane over an ionisation source to an ion reaction region, with which two or more ion drift regions communicate, means for impressing a potential gradient on each drift region, an ion injection shutter at the entrance to each drift region whereby the drift region can be made accessible or inaccessible to ions of a particular sign located in the reaction region, an ion detector in each drift region, means for passing drift gas down each drift region to the reaction region and exit means in the reaction region remote from the ionisation source for venting drift gas from the reaction region, the ionisation source (26) being offset from the reaction region (27).

Abstract: An ion beam source. The source includes multiple apertures bounded in close proximity by an extraction electrode for extracting positively charged ions from the source. Ions exiting the source combine downstream to form a broad beam which, in one utilization of the invention, is used for ion beam treatment of a silicon wafer. Individual electrodes in close proximity to the extraction electrode can be biased to either inhibit or allow backstreaming of neutralizing electrons from beam portions close to the source back to the extraction electrode. This allows the beam portion to become deneutralized and, therefore, unstable. The unstable beam is diminished in intensity since positively charged ions within that beam portion exit the beam. An isolation plate separates beam portions in close proximity to the extraction electrode to inhibit beam crosstalk and an additional suppression electrode common to all beam portions is controllably biased to further enhance control over beam portion intensity.

Abstract: The present invention discloses an ion beam gun wherein the ions are produced by radio-frequency excitation. A plasma is created in a vessel, or chamber, by ionizing gas molecules by means of a coil about the outside of the vessel. The coil receives radio-frequency energy which ionizes the gas molecules. The inside of the vessel contains an anode and resonator to assist in shaping and containing the plasma. The resonator acts as an internal electrode to produce eddy currents generated by the radio-frequency energy to enhance the plasma. A multi-apertured screen grid also helps contain and shape the plasma within the chamber while a multi-apertured accelerator grid is used to extract the ions from the ion beam gun.

Abstract: An improved discharge wire for use in an electrostatic precipitator which is used for collecting pollutant particles contained in a flow of exhaust gas. The improved discharge wire is a chain having a plurality of chain links made of conductive material. There is provided at least one needle-like member made of conductive material on at least one of the chain links. As an electric potential is applied to the chain, the needle-like member emits corona current. The corona current charges the pollutant particles such that the pollutant particles are forced by the electric field to a collecting member.

Abstract: An ion beam deposition system in which ions of different masses and from different sources are independently steered into different parts of an analyzer magnet to be converged into a single wide beam which maintains a perpendicular relationship between the beam and the target. The beam is decelerated by a slit type deceleration lens to an energy suitable for deposition. The target is then scanned across the decelerated beam. The beam is maintained at high current and low pressure by confining electrons away from the magnet and/or adding energy to the low pressure atmosphere inside the analyzer magnet to produce a plasma of electrons and charged particles in order to provide adequate neutralizing of the space charge of the beam.

Abstract: A filamentless (without a heated cathode) ion source for thin film processing and surface modification. The ion source comprises a plasma chamber which includes a wall defining an evacuable chamber having a first end and a second end, with a dielectric member extending across the first end of the evacuable chamber. A gas inlet admits a plasma forming gas into the chamber. An RF emitter is positioned adjacent to the dielectric member for inductively generating a plasma in the gas in the plasma chamber during use of the ion source. A control grid structure is provided for extracting ions from plasma in the plasma chamber, and include a first grid connected to a positive voltage source and a second grid connected to a negative voltage source, to produce an acceleration field for accelerating ions towards and through the second grid of the control grid structure. An ion beam processing apparatus and an ion beam neutralizer incorporating such an ion source are also described.

Abstract: A method of generating a high purity (at least 98%) N.sup.+ ion beam using a multicusp ion source (10) having a chamber (11) formed by a cylindrical chamber wall (12) surrounded by a plurality of magnets (13), a filament (57) centrally disposed in said chamber, a plasma electrode (36) having an extraction orifice (41) at one end of the chamber, a magnetic filter having two parallel magnets (21, 22) spaced from said plasma electrode (36) and dividing the chamber (11) into arc discharge and extraction regions. The method includes ionizing nitrogen gas in the arc discharge region of the chamber (11), maintaining the chamber wall (12) at a positive voltage relative to the filament (57) and at a magnitude for an optimum percentage of N.sup.+ ions in the extracted ion beams, disposing a hot liner (45) within the chamber and near the chamber wall (12) to limit recombination of N.sup.+ ions into the N.sub.2.sup.+ ions, spacing the magnets (21, 22) of the magnetic filter from each other for optimum percentage of N.

Abstract: An ionization chamber is separated from an ion lens system while the chamber is in contact with an interface block so that they are directly coupled in which a heater embedded in the interface block serves to heat both the interface block and the ionization chamber.

Abstract: A system and method for analyzing molecular constituents of a composition sample includes: forming a solution of the sample, separating the solution by capillary electrophoresis into an eluent of constituents longitudinally separated according to their relative electrophoretic mobilities, electrospraying the eluent to form a charged spray in which the molecular constituents have a temporal distribution; and detecting or collecting the separated constituents in accordance with the temporal distribution in the spray. A first high-voltage (e.g., 5-100 KVDC) is applied to the solution. The spray is charged by applying a second high voltage (e.g., .+-.2-8 KVDC) between the eluent at the capillary exit and a cathode spaced in front of the exit. A complete electrical circuit is formed by a conductor which directly contacts the eluent at the capillary exit, or by conduction through a sheath electrode discharged in an annular sheath flow about the capillary exit.