Ion Generation Patents (Class 250/423R)
  • Patent number: 4994711
    Abstract: A solid electrolyte ion source has an emitting tip which is small enough to concentrate an elecric field from an extraction plate and thereby significantly increase the extracted current density compared to prior solid electrolyte sources. The source is heated to a temperature sufficient to induce a thermionic ion emission from the tip. The ion emission can be varied independent of the extraction field by varying the degree of heating, thereby preserving a constant focused ion beam spot size during changes of beam brightness. The tip preferably has a radius in the approximate range of 1-10 microns. The source can be used for ion-microprobe surface analysis and micro-circuit fabrication applications previously unavailable with solid electrolyte sources.
    Type: Grant
    Filed: December 22, 1989
    Date of Patent: February 19, 1991
    Assignee: Hughes Aircraft Company
    Inventor: Jesse N. Matossian
  • Patent number: 4992665
    Abstract: The invention relates to a filamentless magnetron-ion source with a magnetron, a microwave guide or a microwave coaxial line, a cylindrical cavity resonator, a lambda-4-short circuit slider member, ECR magnets and a quartz dome. The invention also relates to a process using the said apparatus.
    Type: Grant
    Filed: June 26, 1989
    Date of Patent: February 12, 1991
    Assignee: Technics Plasma GmbH
    Inventor: Wolfgang Mohl
  • Patent number: 4988871
    Abstract: An optical partical pressure gas analyzer employs an electron beam to excite the outer electrons of gas atoms or molecules, and one or more photomultiplier tubes or other similar detectors to detect wavelengths of photons characteristic of the decay of the outer electrons of one or more species of gas molecules. The photomultiplier tubes have a viewing direction substantially at right angles to the electron beam. A Faraday trap or similar device is employed to minimize secondary electron generation. This-film interference filters are favorably employed to pass a specific characteristic wavelength of the desired species, and to reject other wavelengths. An electromechanical filter changer permits each photomultiplier tube to analyze and identify many gaseous species in the low pressure mixture.
    Type: Grant
    Filed: May 8, 1989
    Date of Patent: January 29, 1991
    Assignee: Leybold Inficon, Inc.
    Inventor: Carl A. Gogol
  • Patent number: 4987345
    Abstract: A plasma ion source comprises coaxially oriented electrodes of which a first electrode has the shape of a rod and a second electrode an annular shape, positioned in a space filled with a gas of atomic number greater than that of Boron, a current source up to 100 KA to be reacted within 1 usec and structure for focussing ions located near a formed pinch plasma.
    Type: Grant
    Filed: July 8, 1988
    Date of Patent: January 22, 1991
    Assignee: U.S. Philips Corporation
    Inventors: Hans-Peter Stormberg, Yoshio Watanabe, Isao Ochiai
  • Patent number: 4987346
    Abstract: The invention relates to a particle source with which positive, negative, and neutral particles can be generated and applied on a substrate. The particle source comprises a container (26) in which a gas or gas mixture to be ionized is held. Into this container (26) an electromagnetic wave irradiates which preferably is a microwave. A torus-shaped magnetic field, which is generated with the aid of permanent magnets (32, 33) or electromagnets, simultaneously projects into the container (26). With the aid of a special control grid configuration (38, 39, 40) it becomes possible to draw off positive, negative or neutral particles from the container (26).
    Type: Grant
    Filed: January 18, 1989
    Date of Patent: January 22, 1991
    Assignee: Leybold AG
    Inventors: Werner Katzschner, Stefan Eichholz, Michael Geisler, Michael Jung
  • Patent number: 4983845
    Abstract: An apparatus operating by contact ionization for the production of a beam of accelerated ions comprises an ionization electrode (1) in the form of a small tube, which forms a duct, the inside of which is used for contact ionization of the atoms for ionization, and which has capillary dimensions at least adjacent its exit, which is situated opposite an acceleration electrode (3).
    Type: Grant
    Filed: May 2, 1990
    Date of Patent: January 8, 1991
    Assignee: Max-Planck-Gesellschaft zur Foerderung der Wissenschaften v.V.
    Inventor: Helmuth Liebl
  • Patent number: 4980558
    Abstract: An electron beam generator or electron gun has a line-shaped cathode with a flattened tip as an electron source, a slotted diaphragm disposed in the plane of the cathode tip, and a double anode having two electrodes also fashioned as slotted diaphragms. The voltage potentials of the three slotted diaphragms, and their respective distances to the cathode, are selected such that a stigmatic virtual electron source at infinity is obtained.
    Type: Grant
    Filed: July 13, 1989
    Date of Patent: December 25, 1990
    Assignee: Siemens Aktiengesellschaft
    Inventors: Harald Rose, Gerald Schoenecker
  • Patent number: 4980557
    Abstract: Surface ionization technique for detection of airborne particles whereby each particle is pyrolyzed on a hot surface, releasing its chemical constituents, some of which are ionized at the surface, creating a burst of ions that denote the particle's presence. The hot surface is a catalytic material deposited on an inert substrate heated by an internal heating element. Inert substrates are selected to provide mechanical strength, reduce microphonic noise and make a large catalytic surface area achievable, and hence permit high sensitivity while employing reduced quantities of catalytic materials. By locating the heater within the substrate, its electrical parameters are such that the heater power supply can be simplified. The pulses during "on" parts of the "on-off" cycles are filtered out and not counted. In one embodiment the hot sensor surface is biased to a high voltage by a high bias resistor and is coupled to a pulse-counting preamplifier through a capacitor.
    Type: Grant
    Filed: June 6, 1988
    Date of Patent: December 25, 1990
    Assignee: Extrel Corporation
    Inventors: Richard L. Myers, Edward L. McCall
  • Patent number: 4980556
    Abstract: Disclosed is an apparatus for the generation of large currents of negative ions for use in tandem accelerators, suitable for employment in ion implantation on an industrial production scale. The apparatus includes a high current positive ion source which is coupled to a charge exchange canal where a fraction of the positive ions are transformed into negative ions.
    Type: Grant
    Filed: March 6, 1990
    Date of Patent: December 25, 1990
    Assignee: Ionex/HEI Corporation
    Inventors: John P. O'Connor, Nicholas R. White
  • Patent number: 4973840
    Abstract: An electron/ion coincidence technique is employed to characterize the absolute mass dependent transmission efficiency of mass spectrometers. The technique is not dependent upon the partial pressure of the sample beam or the ionization cross sections of calibrant gases.
    Type: Grant
    Filed: May 26, 1989
    Date of Patent: November 27, 1990
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventor: Santosh K. Srivastava
  • Patent number: 4965491
    Abstract: A plasma generator according to the invention comprises a chamber (2) at a first potential (V1) filled with a gas at a low pressure and a transparent electrode surface comprised of wires, grid or perforated plate (3) at a second potential (V2) higher than (V1). Thus, an electron (4) present in the chamber will be oscillating on both sides of the transparent electrode surface (3) for providing secondary electrons (11 and 12) which create in turn other secondary electrons (13-14, 15-16). At each occurence of an electron pair, one ion (i1, i2, i3, . . . ) is created.
    Type: Grant
    Filed: March 25, 1987
    Date of Patent: October 23, 1990
    Assignee: Centre National de la Recherche Scientifique
    Inventors: Jacques Menet, Vincent Comparat
  • Patent number: 4954711
    Abstract: This source for charged particles comprises a sharply pointed tip (1) and an aperture (2) in a thin sheet of material. If the point of the tip (1) is made sharp enough, i.e., if it ends in a single atom or a trimer of atoms, the electric field existing between the tip (1) and the aperture (2) will cause a stream of electrons to be emitted from the tip (1), pass the aperture (2) and to continue as a beam (4) of free electrons beyond said aperture (2). The sheet (3) carrying the aperture (2) may, for example, be a carbon foil or a metallic foil, including gold. The distance of the tip (1) from the aperture (2) is in the submicron range, and so is the diameter of said aperture (2). The distance is being held essentially constant by means of a feedback loop system. The divergence of the beam (4) is <2.degree..
    Type: Grant
    Filed: October 27, 1989
    Date of Patent: September 4, 1990
    Assignee: International Business Machines Corporation
    Inventors: Hans-Werner Fink, Roger Morin, Heinz Schmid, Werner Stocker
  • Patent number: 4952843
    Abstract: An ion source utilizing a cathode and anode for producing an electric arc therebetween. The arc is sufficient to vaporize a portion of the cathode to form a plasma. The plasma leaves the generation region and expands through another regon. The density profile of the plasma may be flattened using a magnetic field formed within a vacuum chamber. Ions are extracted from the plasma to produce a high current broad on beam.
    Type: Grant
    Filed: March 8, 1989
    Date of Patent: August 28, 1990
    Inventors: Ian G. Brown, Robert A. MacGill, James E. Galvin
  • Patent number: 4950957
    Abstract: A method of detecting insulation defects in a wire using an extended ion source wherein ions are generated along the entire length of the extended ion source and flow toward an insulated cable located in close proximity thereto. If there are defects in the cable insulation, a real current will flow through the insulation defects and into the cable conductor. The presence of this real current can be measured by connecting one end of the cable conductor to an ammeter and changes in this current indicate the existence of a defect in the wire insulation. In another embodiment of the extended ion source, the ions are generated only in a small portion of the extended source at any one time. By exciting the source with the proper sequence of signals, the ion generation scans or propagates along the entire length of the extended ion source.
    Type: Grant
    Filed: November 4, 1988
    Date of Patent: August 21, 1990
    Assignee: Westinghouse Electric Corp.
    Inventors: Juris A. Asars, Peter J. Chantry
  • Patent number: 4943718
    Abstract: The invention provides a mass spectrometer comprising an ion source provided with an electron emitting source and magnets which are cooperable to produce a collimated electron beam within the ion source; a mass analyzer; first and second electrodes which cooperate to limit the angular divergence of the ion beam which emerges from the source along the ion beam axis; and magnetic field screens disposed between the first and second electrode means, which reduce the field due to the magnets along the ion beam axis. In this way the mass discrimination introduced by the magnets in prior ion sources is reduced and the accuracy of isotropic ratio measurements is improved.
    Type: Grant
    Filed: February 17, 1989
    Date of Patent: July 24, 1990
    Assignee: VG Instruments Group Limited
    Inventors: Raymond C. Haines, Patrick J. Turner
  • Patent number: 4942304
    Abstract: A moveable ion source is provided in apparatus for ion implantation to enable ions to be directed from different directions onto bulky target objects. The ion source may be connected on the outside of a vacuum chamber or on a mobile arm within it.The ion source is supplied with both gas and electricity via a single cable. The supply cable has a multi-layered structure with gas flow being supported through a relatively thin inner tube which also carries the h.t. transmission and return conductors. A relatively thick tube is provided around the inner tube to insulate the transmission and return conductors from an earth conductor and to provide mechanical strength. A special coupling is used to interconnect the supply cable with the ion source housing.
    Type: Grant
    Filed: May 24, 1988
    Date of Patent: July 17, 1990
    Assignee: Tecvac Limited
    Inventor: Malcolm E. Boston
  • Patent number: 4942339
    Abstract: An intense, steady state, low emittance electron beam generator is formed by operating a hollow cathode discharge plasma source at critical levels in combination with an extraction electrode and a target electrode that are operable to extract a beam of fast primary electrons from the plasma source through a negatively biased grid that is critically operated to repel bulk electrons toward the plasma source while allowing the fast primary electrons to move toward the target in the desired beam that can be successfully transported for relatively large distances, such as one or more meters away from the plasma source.
    Type: Grant
    Filed: September 27, 1988
    Date of Patent: July 17, 1990
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: Ady Hershcovitch, Vincent J. Kovarik, Krsto Prelec
  • Patent number: 4942296
    Abstract: The invention provides a mass spectrometer for the analysis of a sample dissolved in a super-critical fluid. The fluid is expanded directly into an ionization chamber without a liquid-gas transition and the sample is ionized by means of a glow discharge established in the chamber. Preferably the electrodes between which the discharge is struck comprise the wall of the ionization chamber and the tube through which the super-critical fluid enters the chamber. The spectrometer is primarily intended for use with a super-critical fluid chromatograph.
    Type: Grant
    Filed: July 7, 1988
    Date of Patent: July 17, 1990
    Assignee: VG Instruments Group Limited
    Inventor: David S. Jones
  • Patent number: 4941915
    Abstract: A thin film forming apparatus comprising a plasma generating chamber into which is introduced a gas to generate plasma; a first target and a second target which are made of a material to be sputtered and are disposed in the vicinity of both end portions of interior of the plasma generating chamber, respectively, at least one of the first and second targets having the form of a cylinder; at least one power supply for applying a negative potential to the first and second targets; an electromagnet adapted to establish the magnetic field within the plasma generating chamber and inducing the magnetic flux leaving one of the first and second targets and entering the other; and a specimen chamber which incorporates therein a substrate holder and is communicated to one end of the plasma generating chamber on the side of the cylindrical target.
    Type: Grant
    Filed: February 7, 1989
    Date of Patent: July 17, 1990
    Assignee: Nippon Telegraph and Telephone Corporation
    Inventors: Morito Matsuoka, Ken'ichi Ono
  • Patent number: 4940893
    Abstract: Method and apparatus for forming coherent clusters. By cluster is meant an assembly of one or more atoms or molecules assembled together. The clusters are rendered coherent by a process of induced scattering.
    Type: Grant
    Filed: March 18, 1988
    Date of Patent: July 10, 1990
    Assignee: Apricot S.A.
    Inventor: Shui-Yin Lo
  • Patent number: 4937456
    Abstract: An ion thruster for accelerating positively charged ions produced by the collision of free electrons with gas atoms. An ion thruster (10,100) includes a cathode chamber (12, 60, 118) and an ionization chamber (14, 106). The outer surface of an emitter tube (28, 61, 128) is coated with a dielectric material to protect the emitter tube from sputtering erosion. A plurality of bar magnets (20, 22; 108, 110) are arranged in a spaced apart circular array around the cathode chamber with a pole face of each of the magnets tangentially aligned with wall sections (16, 18; 102, 104) of the ionization chamber. The bar magnets thus define a picket fence, wherein the magnetic field between adjacent bar magnets is used to extend the mean path of an electron entering the ionization chamber, improving the probability that it will impact an atom, creating an ion.A grid plate (112) comprises an accelerator grid (204) coated on its inner and outer surfaces with a dielectric coating (206, 208).
    Type: Grant
    Filed: October 17, 1988
    Date of Patent: June 26, 1990
    Assignee: The Boeing Company
    Inventors: Donald Grim, Paul G. Lichon
  • Patent number: 4937206
    Abstract: A method for preventing cross-contamination of semiconductor wafers during processing comprising covering a surface portion of a support assembly with a process compatible material, engaging a semiconductor wafer with the support assembly, processing the wafer while it is engaged with the support member, and removing the process compatible material from the support assembly after said material is considered to be contaminated. A shield particularly adapted for this process includes a shield portion made from a process compatible material and a process-compatible adhesive for attaching the shield portion to the support assembly.
    Type: Grant
    Filed: July 10, 1989
    Date of Patent: June 26, 1990
    Assignee: Applied Materials, Inc.
    Inventors: Peter R. Jaffe, Kevin Fairbairn
  • Patent number: 4933551
    Abstract: An in-line reversal electron, high-current ionizer capable of focusing a beam of electrons to a reversal region and executing a reversal of said electrons, such that the electrons possess zero kinetic energy at the point of reversal, may be used to produce both negative and positive ions. A sample gas is introduced at the point of electron reversal for low energy electron-(sample gas) molecule attachment with high efficiency. The attachment process produces negative ions from the sample gas, which includes species present in trace (minute) amounts. These ions are extracted efficiently and directed to a mass analyzer where they may be detected and identified. The generation and detection of positive ions is accomplished in a similar fashion with minimal adjustment to potentials applied to the apparatus.
    Type: Grant
    Filed: June 5, 1989
    Date of Patent: June 12, 1990
    Assignee: The United State of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: Mark T. Bernius, Ara Chutjian
  • Patent number: 4931698
    Abstract: An ion source comprising a discharge chamber that has a gas inlet and an ion exit, two pairs of cathodes that are disposed on the side surfaces of said discharge chamber, two pairs of anodes, each anode being disposed in a space between the adjacent cathodes, and a pair of solenoids that are wrapped around one pair of cathodes so as to be mutually repulsive magnetically, wherein there is no magnetic field in the central axis of the other pair of cathodes around which no solenoids are wrapped.
    Type: Grant
    Filed: April 12, 1989
    Date of Patent: June 5, 1990
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventor: Yoshikazu Yoshida
  • Patent number: 4928033
    Abstract: A thermionic emitter for providing positive ions has been described incorporating a mixture of beta-alumina and inert material such as charcoal positioned on a filament for heating the mixture. Alternately the invention may incorporate beta-alumina with inert material such as nickle deposited in selected areas. The invention overcomes the problem of generating positive ions with low power consumption.
    Type: Grant
    Filed: November 15, 1988
    Date of Patent: May 22, 1990
    Assignee: Environmental Technologies Group, Inc.
    Inventors: Glenn E. Spangler, John P. Carrico, Jr., Donald N. Campbell
  • Patent number: 4926055
    Abstract: There is disclosed a field emission electron gun comprising a field emission tip, an extraction electrode for producing an electric field that extracts electrons from the tip, and an accelerating electrode for accelerating the electrons extracted by the extraction electrode. The extraction electrode is inclined to a plane perpendicular to the optical axis of the beam of the electrons and shaped like an inverted cone. The surface of the accelerating electrode which faces the extraction electrode is inclined in the same manner as the extraction electrode. A recess that faces the extraction electrode is formed in the center of the accelerating electrode. The ratio of the voltage V.sub.0 applied to the accelerating electrode to the voltage V.sub.1 applied to the extraction electrode, i.e., V.sub.0 /V.sub.1, can be varied over a wide range while maintaining the virtual source within the virtual image region.
    Type: Grant
    Filed: January 23, 1989
    Date of Patent: May 15, 1990
    Assignee: Jeol Ltd.
    Inventor: Toshiaki Miyokawa
  • Patent number: 4924102
    Abstract: An apparatus for generating negatively charged species has a cathode and an anode which are disposed in a vacuum vessel facing each other. A constricted arc having a sufficiently large arc current is generated in an arc space between the anode and the cathode, thereby generating negatively charged species of various types of metals, semiconductors, and gases.
    Type: Grant
    Filed: December 5, 1988
    Date of Patent: May 8, 1990
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Hideaki Toya, Hiroyuki Sasao, Tatsuya Hayshi
  • Patent number: 4924101
    Abstract: A charged particle source for emitting a positive ion or electron by applying a positive or negative potential to a tip electrode covered with a liquid substance is disclosed in which mechanical vibration is applied to the tip electrode so that a favorable standing wave is formed in the liquid substance, to vary the shape of a charged-particle emitting portion of the liquid substance periodically, thereby changing the intensity of an emitted, charged-particle beam periodically, and thus a pulsed beam having a repetition rate up to the GHz band can be obtained without increasing the energy dispersion of the beam.
    Type: Grant
    Filed: January 6, 1988
    Date of Patent: May 8, 1990
    Assignee: Hitachi, Ltd.
    Inventors: Noriyuki Sakudo, Hifumi Tamura
  • Patent number: 4911814
    Abstract: A thin film forming apparatus comprises a plasma generating chamber into which is introduced a gas to generate plasma therein; a microwave introduction window connected to the plasma generating chamber for introducing the microwave into the latter, a first target and a second target made of materials to be sputtered and disposed at both end portions of interior of the plasma generating chamber, respectively, at least one of the first and second targets being in the form of a tube, at least one power supply for applying a negative voltage to the first and second targets, magnetic field producing means for producing the magnetic field and the magnetic flux leaving one of the first and second targets and entering the other, and a specimen chamber communicated to the plasma generating chamber and having a substrate holder installed therein.
    Type: Grant
    Filed: February 7, 1989
    Date of Patent: March 27, 1990
    Assignee: Nippon Telegraph and Telephone Corporation
    Inventors: Morito Matsuoka, Kenichi Ono
  • Patent number: 4906900
    Abstract: A coaxial radiofrequency wave plasma generating apparatus with an elongate metallic cavity (10) having a movable elongate coupling probe (16) mounted in line with an axis (a--a) of the cavity having a central coaxial conductor (11) and having a movable plate (12) for obtaining a mode of resonance of the radiofrequency wave in the cavity surrounding a chamber (14) for confining the plasma (100) is described. An end (11b) of the conductor is adjacent to the chamber and can optionally support a set of magnets (27). The apparatus is particularly useful for retrofitting existing vacumm sources (101) having small inlet ports (105) for plasma treatment using molecular beam epitaxy (MBE).
    Type: Grant
    Filed: April 30, 1989
    Date of Patent: March 6, 1990
    Assignee: Board of Trustees operating Michigan State University
    Inventor: Jes Asmussen
  • Patent number: 4904872
    Abstract: In a method for generating extremely short ion pulses having a high intensity and a pulsed ion source to generate extremely short ion pulses having a high intensity, the ions are generated by an electron, laser or particle beam and are stored in a potential well formed by at least three electrodes, at least one of the central electrodes having a more attractive potential for the ions in question than the other electrodes. A single electrical pulse is used for extracting the ions from the potential well. Correspondingly constructed pulsed ion sources are particularly suitable for use in time-of-flight mass spectrometry. The ion storage effect is produced by a number of electrodes which generate a potential well for the ions to be detected. The ion compression is determined by the field strength existing during the ion extraction in the ion source which should be approximately equal in the entire area of acceleration.
    Type: Grant
    Filed: May 27, 1988
    Date of Patent: February 27, 1990
    Inventors: Raimund Grix, Roland Kutscher, Gang Q. Li, Hermann Wollnik
  • Patent number: 4904866
    Abstract: A process for large area hardening of photoresists or polymer films placed on substrates is disclosed. The process requires the use of a short duration (<1 us.) pulsed electron beam produced in soft vacuum by an abnormal glow discharge. The pulsed electron beam interacts with the patterned photoresist/polymer resist so as to harden or stabilize the patterns thereon by electron induced cross-linking. The use of a soft vacuum environment allows for both thermal as well as chemically induced hardening.
    Type: Grant
    Filed: November 17, 1988
    Date of Patent: February 27, 1990
    Assignee: Applied Electron Corporation
    Inventors: George J. Collins, Jayaram Krishnaswamy
  • Patent number: 4904873
    Abstract: A method for the repeatable generation and guidance of intensive, large-area ion, electron and x-ray beams, with the beam guidance being effected already in the beam generator by means of operationally variable, magnetic and electric fields and variable magnetic correction fields, wherein the beam guidance fields are generated by the beam current itself and the magnetic correction fields by the current source associated with the beam generator.
    Type: Grant
    Filed: February 27, 1989
    Date of Patent: February 27, 1990
    Assignee: Kernforschungszentrum Karlsruhe GmbH
    Inventor: Werner Kuhn
  • Patent number: 4902898
    Abstract: An array wand for charged particle beam shaping and control applications can selectively and accurately shape or deflect single or multiple beams of charged particles so as to delineate a desired pattern in a substrate. The wand preferably takes the form of a monolithic block of material, for example semiconductor material, having one or more cavities etched through it which serve to form a collimated beam of particles. The array wand employs an Einsel lens structure which contains electrostatic electrodes for precise focusing of the beams of charged particles. The Einsel lens includes successive layers on the monolithic substrate which simultaneously act as a lens, an aperture, and a beam line for beams of charged particles.The array wand may be manufactured, in large quantity with precision, and may be employed to form small focused beams.
    Type: Grant
    Filed: April 26, 1988
    Date of Patent: February 20, 1990
    Assignee: Microelectronics Center of North Carolina
    Inventors: Gary W. Jones, Susan K. Schwartz Jones
  • Patent number: 4902647
    Abstract: A method of effecting modifications at the surfaces of materials using low energy ion beams of known quantum state, purity, flux and energy. The ion beam is obtained by bombarding ion-generating molecules with electrons which are also at low energy. The electrons used to bombard the ion generating molecules are separated from the ions thus obtained and the ion beam is directed at the material surface to be modified. Depending on the type of ion generating molecules used, different ions can be obtained for different types of surface modifications such as oxidation and diamond film formation.
    Type: Grant
    Filed: October 21, 1988
    Date of Patent: February 20, 1990
    Assignee: The United States of American as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: Ara Chutjian, Michael H. Hecht, Otto J. Orient
  • Patent number: 4902897
    Abstract: An ion beam exposure device including an ion beam source and an ion beam mask is provided. The ion beam source is formed from a thin film which is disposed between a vacuum side and a gas side. The film is in the form of a plate having a fine wire buried therein or a crystal boundary formed therein. An electric field supplied to the plate ionizing the gas passing from the gas source side of the plate to the vacuum side. A patterned ion mask may be formed directly on the ion beam source, thereby creating an ion beam gun which emits an ion beam in the desired pattern.
    Type: Grant
    Filed: October 13, 1987
    Date of Patent: February 20, 1990
    Assignee: Seiko Epson Corporation
    Inventor: Seiichi Iwamatsu
  • Patent number: 4901194
    Abstract: Ion content of the air in a clean room or the like is controlled by generating positive and negative ions during alternating time periods using positive and negative high voltage generators connected to ionizing electrodes. Ion generation periods are followed by off intervals during which the ions disperse away from the electrodes before ions of opposite polarity are generated. In one aspect of the invention, each period of actuation of a high voltage generator of one polarity is followed by a momentary actuation of the high voltage generator of opposite polarity. This produces ions that are attracted to the electrode of the one polarity and then neutralize residual charge on the capacitors of the generator of the one polarity thereby assuring an abrupt termination of ion generation which can otherwise extend into the subsequent off period.
    Type: Grant
    Filed: December 29, 1988
    Date of Patent: February 13, 1990
    Assignee: Ion Systems, Inc.
    Inventors: Arnold J. Steinman, Michael G. Yost
  • Patent number: 4894546
    Abstract: A hollow cathode ion source for in a vacuum chamber wherein it comprises a cylindrical cathode through one end of which a gaseous medium of at least a discharge maintaining gas or said discharge maintaining gas and a metal vapor is or are introduced, and an anode provided on the other end of said cylindrical cathode and having at least one ion extraction opening, said gaseous medium being ionized by a discharge means between said cylindrical cathode and said anode to produce ions which are extracted through said ion extraction opening in the axial direction of said cylindrical cathode.The cylindrical cathode in the ion source has a large diameter at least about half and preferably about equal to its axial length and may be directly cooled.
    Type: Grant
    Filed: March 7, 1988
    Date of Patent: January 16, 1990
    Assignee: Nihon Shinku Gijutsu Kabushiki Kaisha
    Inventors: Ryota Fukui, Kenichi Takagi, Riichi Kikuchi, Kazuo Takayama, Akira Tonegawa
  • Patent number: 4893019
    Abstract: The ion current generator is employed for thin film formation, ion implantation, etching, sputtering or the like. A vaporizer supplies material atoms to a predetermined region, and then, the material atoms are excited to a Rydberg state by lasers supplied from laser oscillators. The material atoms thus excited are ionized by an electric field applied from electric field application means, to be lead to a predetermined direction. Accordingly, an ion current can be generated at a high efficiency and low cost.
    Type: Grant
    Filed: April 26, 1988
    Date of Patent: January 9, 1990
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Tatsuo Oomori, Kouichi Ono, Shigeto Fujita
  • Patent number: 4891525
    Abstract: An ion source of the side extraction type which includes auxiliary electrodes surrounding the cathode at the ends of the anode, and insulators surrounding the auxiliary electrodes and electrically isolating them from the anode. The auxiliary electrodes essentially define the ends of the discharge chamber, leaving the anode confined to the cylindrical surface surrounding the filament. Each insulator is made up of an inner insulator and an outer insulator with an annular space defined between them. The inner and outer insulators are each in the form of a cylinder with a radially extending flange formed at one end, and interfit with the anode and with each other such that cylindrical spaces are defined between the outer flange portion and the anode and between the inner and outer flange portions. These and other features contribute to improve the electrical isolation between the auxiliary electrode and the anode, prolong source life, and improve beam purity.
    Type: Grant
    Filed: November 14, 1988
    Date of Patent: January 2, 1990
    Assignee: Eaton Corporation
    Inventors: Larry E. Frisa, Monroe L. King, Stephen E. Sampayan
  • Patent number: 4888522
    Abstract: A method and apparatus (10, 40) for producing high-velocity material jets provided. An electric current pulse generator (14, 42) is attached to an end of a coaxial two-conductor transmission line (16, 44) having an outer cylindrical conductor (18), an inner cylindrical conductor (20), and a solid plastic or ceramic insulator (21) therebetween. A coxial, thin-walled metal structure (22, 30) is conductively joined to the two conductors (18, 20) of the transmission line (16, 44). An electrical current pulse applies magnetic pressure to and possibly explosively vaporizes metal structure (22), thereby collapsing it and impelling the extruded ejection of a high-velocity material jet therefrom. The jet is comprised of the metal of the structure (22), together with the material that comprises any covering layers (32, 34) disposed on the structure. An electric current pulse generator of the explosively driven magnetic flux compression type or variety (42) may be advantageously used in the practice of this invention.
    Type: Grant
    Filed: April 27, 1988
    Date of Patent: December 19, 1989
    Assignee: The United States of America as represented by the Department of Energy
    Inventor: Richard C. Weingart
  • Patent number: 4886969
    Abstract: An apparatus for producing a beam of ionized clusters includes a source that emits a beam of clustered and unclustered atoms through a nozzle and a cold cathode ionizer that ionizes the clusters. The ionizer is positioned in close proximity to the nozzle and the beam as it is emitted from the nozzle. A plasma is formed in the beam adjacent the nozzle when secondary electrons emitted from the cathode are accelerated and injected into the beam, resulting in the ionization of atoms and clusters. The cathode is preferably formed, at least in part, of a material that efficiently emits secondary electrons when impacted by ionized atoms extracted from the plasma to impact against the cathode, and the secondary electrons are injected into the plasma to renew the process. The ionized clusters remain in the beam and proceed to their target.
    Type: Grant
    Filed: December 16, 1988
    Date of Patent: December 12, 1989
    Assignee: Hughes Aircraft Company
    Inventor: Wolfgang Knauer
  • Patent number: 4886966
    Abstract: A sample introducing apparatus for an inductively coupled plasma mass spectrometer comprises a means supplying the inert gas for carrying the vaporized sample, a heater for defining the path through which the inert gas is passed as well as having the inner surface, on which the sample to be analyzed thereon is put and for generating the heat with the electrical being applied, in which the film structure is formed on said surface, and the surface contacted with the inert gas of the film structure vaporized the sample made of any one of the high melting metal oxide and the high melting metal nitride, an electrode structure for supporting the heater and supplying the electrical power to the heater.
    Type: Grant
    Filed: January 5, 1989
    Date of Patent: December 12, 1989
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hideki Matsunaga, Naoyuki Hirate
  • Patent number: 4886971
    Abstract: In an ion beam irradiating apparatus, a specified ion beam is first deflected in a deflection direction perpendicular to an ion beam orbit by an ion beam deflector. The deflected ion beam is neutralized by a thermoelectron beam emitted from a filament of an ion neutralizer. An electrode is employed to control the supply of the thermoelectron beam to the deflected ion beam. Both the filament and control electrode elongated along the deflection direction surround the deflected ion beam traveled along the ion beam orbit.
    Type: Grant
    Filed: March 9, 1988
    Date of Patent: December 12, 1989
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Yasushi Matsumura, Akira Shuhara, Shigeo Sasaki, Kazumi Fukumoto, Hitoshi Takeya
  • Patent number: 4883969
    Abstract: Method of ionizing a gas within a chamber having a cathode disposed therein, wherein the sputtering effect upon the cathode is substantially reduced to prolong the life of the cathode. The cathode within the chamber is initially activated to emit thermal electrons by applying a voltage thereto. The gas to be ionized is then introduced into the chamber along with an active gas. Ionization of the gas to be ionized is then achieved by subjecting the gas to be ionized to the thermal electrodes emitted by the cathode. The voltage applied to the cathode and the voltage between the cathode and the wall of the chamber are regulated so as to maintain a substantially constant electric arc current flowing from the wall of the chamber to the cathode.
    Type: Grant
    Filed: February 21, 1989
    Date of Patent: November 28, 1989
    Assignee: Texas Instruments Incorporated
    Inventors: Yoshihiro Ishida, Akira Yoshida, Hideo Kobayashi
  • Patent number: 4883968
    Abstract: An electron cyclotron resonance ion source for an ion implanter. The source includes an ionization chamber surrounded along its length by an electromagnet. A number of extraction electrodes at an output end of the ionization chamber allow positively charged oxygen ions to pass through apertures in the electrodes. The uniformity of the axially aligned magnetic field in the ionization chamber is extended through the extraction electrode by a magnetically permeable electrode and through use of non-magnetically permeable material to mount others of said electrodes.
    Type: Grant
    Filed: June 3, 1988
    Date of Patent: November 28, 1989
    Assignees: Eaton Corporation, Nippon Telegraph and Telephone Corporation
    Inventors: James E. Hipple, Gerald L. Dionne, Yasuhiro Torii, Masaru Shimada, Iwao Watanabe
  • Patent number: 4871918
    Abstract: An ion-electron source based on a new type of gas discharge in a hollow anode is presented. A small surface of the exit aperture and a high density of the current enable high brightness of the source; high efficiency and simple construction make possible low production price and long lifetime of the source.
    Type: Grant
    Filed: October 6, 1987
    Date of Patent: October 3, 1989
    Assignee: The Institute for Atomic Physics
    Inventor: Vujo I. Miljevic
  • Patent number: 4869835
    Abstract: The present invention provides an ion source comprising an ion-generating chamber and an anode formed of multi-capillary for sending high-density atoms or molecules to be ionized into the ion-generating chamber in a constant direction.
    Type: Grant
    Filed: November 18, 1988
    Date of Patent: September 26, 1989
    Assignees: Osaka Prefecture, Cryovac Corporation
    Inventors: Soichi Ogawa, Akio Okamoto, Shigeo Fukui, Tsutomu Ueno
  • Patent number: 4870284
    Abstract: An ion source including a plasma chamber for generating a plasma therein, at least three parallel electrodes for drawing out an ion beam from the plasma chamber, the first and second power sources for generating high and low drawing voltages, respectively, is disclosed in which the first power source is connected between the first pair of adjacent electrodes spaced apart from each other a relatively long distance to perform a high voltage operation, the second power source is connected between a second pair of adjacent electrodes spaced apart from each other a relatively short distance to perform a low voltage operation, and one of the high voltage operation and low voltage operation is changed over to the other with the aid of switching elements.
    Type: Grant
    Filed: November 16, 1988
    Date of Patent: September 26, 1989
    Assignee: Hitachi, Ltd.
    Inventors: Isao Hashimoto, Hideshi Kadooka
  • Patent number: RE33386
    Abstract: A plasma is generated within an induction coil and the plasma is sampled through an orifice into a vacuum chamber for mass analysis of trace ions in the plasma. Arcing at the orifice is prevented by grounding the induction coil at or near its center, thus eliminating ultraviolet noise and reducing average ion energies and ion energy spread, as well as preventing destruction of the orifice. The elimination of arcing at the orifice allows the use of a sharp edge orifice structure to prevent formation of a cool boundary layer over the orifice and also permits direct sampling of the plasma. The direct sampling and the lack of cooling prevent recombination and reaction of the ions with oxygen and improve the response to elements of high ionization potential, increasing the desired ion signal and greatly reducing the presence of oxides which would otherwise complicate the spectrum.
    Type: Grant
    Filed: August 7, 1987
    Date of Patent: October 16, 1990
    Inventor: Donald J. Douglas