Ion Generation Patents (Class 250/423R)
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Patent number: 5196708Abstract: An ion source for producing a series of bursts of ions of predetermined energy suitable for use in a time-of-flight mass spectrometer is described. The source includes an ion gun 1 whose accelerating voltage is periodically varied such that the energy of the ions produced by the gun 1 is ramped from a first energy to a second energy. A chopping means is provided to chop the beam of ions produced by the gun 1 at, times corresponding to periods during which the energy of the particles is being ramped.Type: GrantFiled: February 19, 1992Date of Patent: March 23, 1993Assignee: Kratos Analytical LimitedInventor: Stephen J. Mullock
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Patent number: 5194739Abstract: A liquid metal ion source which can produce cesium ions stably for a long time in the form of a beam focussed to a micro-spot. The liquid metal ion source is composed of a reservoir containing a liquid metal, and a needle type emitter passing through the reservoir and having a sharp tip end which protrudes from the reservoir, the liquid metal being composed primarily of a cesium compound containing 0.3-20 atom % of oxygen.Type: GrantFiled: March 20, 1992Date of Patent: March 16, 1993Assignee: Seiko Instruments Inc.Inventors: Keiji Sato, Yoshie Kitamura, Hiroyuki Suzuki
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Patent number: 5191217Abstract: A FED with integrally formed deflection electrode coupled to the electron emitter such that any variation of electron emitter operating voltage is coincidentally impressed on the deflection electrode so as to effectively minimize variations in the emitted electron beam cross-section. In image display devices including FEDs with voltage variations induced at the electron emitter to provide image information, integrally formed deflection electrodes are connected to follow the electron emitter variations so that pixel cross-sections remain substantially invariant under device operation.Type: GrantFiled: November 25, 1991Date of Patent: March 2, 1993Assignee: Motorola, Inc.Inventors: Robert C. Kane, Norman W. Parker
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Patent number: 5189303Abstract: An ion source for producing wide, large area type ion beams with a mass-separation device. Four, five six or so electrode plates with ion holes at the same positions are installed at the outlet of the ion source. Second or third one of the electrodes has Wien filters at the ion holes. The Wien filter has permanent magnets and electrodes for producing a magnetic field and an electric field perpendicular to the axial direction of the ion holes. Ion beams which have not been accelerated so fast are separated by mass by the Wien filter. Low kinetic energy of ions alleviates the strength of the magnetic field and the electric field. Wide, large area type ion beams without impurities are obtained.Type: GrantFiled: February 21, 1992Date of Patent: February 23, 1993Assignee: Nissin Electric Co., Ltd.Inventors: Masayasu Tanjyo, Hiroshi Nakazato
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Patent number: 5184016Abstract: The invention provides glow discharge optical or mass spectrometers wherein a solid sample may be mounted in a unitary source assembly adjacent to a first electrode means. A second electrode means, spaced from sample by an insulating washer, is also part of the source assembly and engages with a discharge chamber into which a discharge gas is introduced. A glow discharge is maintained in the discharge by a potential differential difference applied between the first and second electrode means. In a mass spectrometer, ions formed in the discharge pass to a mass analyzer, while in an optical spectrometer, optical radiation form the discharge is spectroscopically analyzed. Particularly in the case of a mass spectrometer, the source assembly may be mounted on an insertion probe allowing it to be easily withdrawn from the vacuum envelope to facilitate sample changing and maintenance.Type: GrantFiled: January 10, 1991Date of Patent: February 2, 1993Assignee: VG Instruments Group LimitedInventors: Gerard A. Ronan, Alistair Cole
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Patent number: 5173610Abstract: Disclosed herein is a method of charging clusters comprising charging said clusters as they are formed by passing the fluid which will make up the clusters from an area of first pressure to an area of second pressure, the second pressure being lower than the first pressure, the charging of the clusters as they are formed being such that it does not destroy the strong coupling or coherency of the clusters.Type: GrantFiled: June 12, 1990Date of Patent: December 22, 1992Assignee: Apricot S.A.Inventor: Shui-Yin Lo
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Patent number: 5168197Abstract: An ion beam generating apparatus including a vacuum chamber for retaining a vacuum therein, a microwave being introduced therein through at least one portion thereof, at least one vacuum arc plasma generating source having a cathode, an anode, and arc generating device and disposed inside the vacuum chamber, and ion extracting device for extracting ions from the plasma.Type: GrantFiled: March 27, 1992Date of Patent: December 1, 1992Assignees: Rikagaku Kenkyusho, Chubu Electric Power Company, Incorporated, TDK CorporationInventors: Moritake Tamba, Katushige Yamada, Kazuhiko Kawamura
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Patent number: 5162699Abstract: An ion source of high ion yield, especially boron yield, is provided with a boron compound of high melting point and low work function such as LaB.sub.6 (lanthanum hexaboride) at a suitable location inside the arc chamber of the ion source, which operates on the principle of ion production by using a hot cathode to produce hot electrons.Type: GrantFiled: October 11, 1991Date of Patent: November 10, 1992Assignee: Genus, Inc.Inventors: Nobuhiro Tokoro, Richard C. Becker
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Patent number: 5160841Abstract: An ion source for a mass spectrometer has a continuous flow probe (FIG. 2) having a mesh defining a surface, a capillary for supplying liquid sample to the surface and a porous body disposed at the periphery of the mesh. An ion source generates a beam of ionising radiation to which sample supplied to the surface is exposed. Sample supplied by the inlet tube spreads across the surface and surplus sample reaching the periphery of the mesh is absorbed by the porous body.Type: GrantFiled: December 12, 1991Date of Patent: November 3, 1992Assignee: Kratos Analytical LimitedInventors: John R. Chapman, David S. Jones
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Patent number: 5157260Abstract: An electrospray ion source having a capillary tube for directing ions from an ionizing region to an analyzing region where it forms a gas jet with ions which expands and a tube lens cooperating with said capillary for forcing ions to the center of said jet.Type: GrantFiled: May 17, 1991Date of Patent: October 20, 1992Assignee: Finnian CorporationInventors: Iain C. Mylchreest, Mark E. Hail, John R. Herron
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Patent number: 5153440Abstract: A method of stabilizing the operation of a liquid metal ion source in a focussed ion beam apparatus, the ion source being composed of a metal needle having a pointed downstream end and a lateral surface, a reservoir for supplying a liquid metal to the surface of the needle, a device for heating the metal, an extraction electrode having a small aperture disposed at a position opposite the metal needle for allowing an ion current to pass through the aperture, and a circuit for applying a voltage between the metal needle and the extraction electrode. According to the method the temperature of the liquid metal in the reservoir is normally maintained at a first value corresponding to a usual operating temperature value, and the temperature of the liquid metal is temporarily raised to a second value higher than the first value, by operation of the heating device, in order to maintain stable long term operation of the ion source.Type: GrantFiled: April 3, 1991Date of Patent: October 6, 1992Assignee: Seiko Instruments, Inc.Inventor: Anto Yasaka
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Patent number: 5150010Abstract: A crossed-field triode discharge type ion generating apparatus, containing a vacuum container, a magnetic field generating unit, a positive pole having a hollow part, a first negative pole, a second negative pole having an ion injecting hole, a control electrode, and a means of giving the highest electric potential among ones for all the electrodes to the positive pole and higher electric potential than ones for the first negative pole and the second negative pole to the control electrode, has at least either of the control electrode or the second negative pole constructed out of a cylinder possessing a through hole coaxial with the hollow part of the positive pole and a platelike part provided on one end of the cylinder, the cylinder being provided with a part made of at least one kind of metal belonging to a group of metals including vanadium, chrome, niobium, molybdenum, tantalum and tungsten and at least one of the control electrode, the first negative pole or the second negative pole being also providedType: GrantFiled: March 13, 1991Date of Patent: September 22, 1992Assignee: Kabushiki Kaisha ToshibaInventor: Katsuhiro Kageyama
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Patent number: 5130607Abstract: The device comprises an ionizing unit for the production of low-energy (100-1000 eV) ions (FIG. 2a) with a second negative medium voltage (-100 to -1000 V) grid (6') cathode (6), a second also grid (13') and low-voltage (0 to +100 V) anode (13) and a third medium voltage (-100 to -1000 V) accelerating cathode (12, 12'), to extract the ions from the unit of three grids (6', 13',12'). For the production of high-energy (from 10 to beyond 200 keV) ions (FIG. 3a) there are provided in succession starting from target (2): a first low-voltage (0 to +100 V) anode (7', 7"), a second low-voltage (0 to +50 V) grid (13.sup.Type: GrantFiled: January 11, 1990Date of Patent: July 14, 1992Assignee: Braink AGInventor: Francesco Lama
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Patent number: 5122670Abstract: An electrospray ion source in which the liquid sample is sheathed with a sheath liquid which reduces the formation of water droplets and minimizes formation of high energy neutrals, resulting in improved signal-to-noise ratios.Type: GrantFiled: May 17, 1991Date of Patent: June 16, 1992Assignee: Finnigan CorporationInventors: Iain C. Mylchreest, Mark E. Hail
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Patent number: 5118938Abstract: Provided is a Rydberg atom impact type ion source in a mass spectrometric apparatus wherein gaseous sample molecule is impinged on Rydberg atom to ionize the sample and thus-ionized sample is subjected to mass spectrometric analysis, said ion source being characterized in that a needle rod-like grid is used in a Rydberg atom generating portion of an ion source block.Type: GrantFiled: December 20, 1990Date of Patent: June 2, 1992Assignees: Nippon Oil Company, Limited, Tamotsu KondowInventors: Tamotsu Kondow, Takashi Nagata, Yutaka Yamamoto
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Patent number: 5118950Abstract: A cluster ion synthesis process utilizing a containerless environment to grow in a succession of steps cluster ions of large mass and well defined distribution. The cluster ion growth proceeds in a continuous manner in a plurality of growth chambers which have virtually unlimited storage times and capacities.Type: GrantFiled: December 29, 1989Date of Patent: June 2, 1992Assignee: The United States of America as represented by the Secretary of the Air ForceInventors: John T. Bahns, William C. Stwalley
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Patent number: 5117109Abstract: The components present in the sample with a mobile phase A in 1st section is separated. In 2nd section there is provided with an inserting line of a dilute solution for diluting the mobile phase A and a trapping column which forces the dilute solution to pass but catches the components by connecting said line to said column. In 3rd section, the components caught by the trapping column are introduced into mass spectrometer by using a mobile phase B. It is preferable to use respectively different mobile phases for the mobile phase A and the mobile phase B. It is good to install separating columns in 1st and 3rd sections. It is also desired to add the retaining apparatus of the components separated in 1st section.Type: GrantFiled: September 6, 1990Date of Patent: May 26, 1992Assignee: Eisai Co. Ltd.Inventors: Naoki Asakawa, Hiroshi Ohe, Yutaka Yoshida, Tadashi Sato, Yukuo Nezu, Yoshiya Oda
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Patent number: 5115135Abstract: An ion source includes a partial flow generator for generating particle flow including atoms or molecules, a laser beam generator for generating a laser beam with one or a plurality of wavelengths which irradiates the whole or one part of the atoms or molecules in the particle flow near an exhaust nozzle of the particle flow generator, a pair of electrodes for applyinig an electric field over one part or the whole of the particle flow in the downstream region of the region irradiated with the laser beam, and a power supply for applying a voltage to generate the electric field between the electrodes to the electrodes.Type: GrantFiled: March 2, 1990Date of Patent: May 19, 1992Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Tatsuo Oomori, Kouichi Ono
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Patent number: 5111053Abstract: Long term stability of a focussed ion beam from a liquid metal ion source is maintained by the combination of a conventional analog feedback technique using a beam current detection, with a superimposed digital control using a CPU which monitors current, beam current and beam extraction voltage to determine the current source state and controls the source to produce optimum operation.Type: GrantFiled: February 19, 1991Date of Patent: May 5, 1992Assignee: Seiko Instruments, Inc.Inventor: Katsumi Suzuki
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Patent number: 5105123Abstract: A plasma source incorporates a furnace as a hollow anode, while a coaxial cathode is disposed therewithin. The source is located in a housing provided with an ionizable gas such that a glow discharge is produced between anode and cathode. Radiation or ionic emission from the glow discharge characterizes a sample placed within the furnace and heated to elevated temperatures.Type: GrantFiled: October 10, 1990Date of Patent: April 14, 1992Assignee: Battelle Memorial InstituteInventor: Nathan E. Ballou
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Patent number: 5104610Abstract: The divergence of the magnetic field for confining the ionized gas (9) in a sealed high-flux neutron tube comprising a Penning-type ion source (1) is increased in the direction of the ion emission zone by influencing the magnet assembly (8) of the ion source. The ion beam extracted from the plasma is accelerated (2) and projected onto a target (4). The geometry and the position of the anode (13) inside the ion source are adapted to the topography of the lines of force in order to ensure minimum interception of the ionizing electrons moving in the structure, which adaptation is achieved notably by using a truncated anode whose generatrices take the shape of the lines of force.Type: GrantFiled: October 4, 1989Date of Patent: April 14, 1992Assignee: U.S. Philips CorporationInventors: Henri Bernardet, Xavier L. M. Godechot, Claude A. Lejeune
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Patent number: 5100803Abstract: The present invention is directed to a method for determining the utilization factor [U] in a photochemical mercury enrichment process (.sup.196 Hg) by measuring relative .sup.196 Hg densities using absorption spectroscopy.Type: GrantFiled: March 15, 1989Date of Patent: March 31, 1992Assignee: GTE Products CorporationInventors: Mark W. Grossman, Philip E. Moskowitz
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Patent number: 5097179Abstract: In an ion generating apparatus, an acceleration power source, a discharge power source and a filament power source can be controlled, and the following steps are automatically in a programmed manner forming a magnetic field in an electron path, supplying a material, applying voltage and causing an electric discharge.Type: GrantFiled: January 25, 1991Date of Patent: March 17, 1992Assignee: Tokyo Electron LimitedInventor: Naoki Takayama
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Patent number: 5089747Abstract: An electron beam excitation ion source includes a housing having an ion generation chamber therein, a port for supplying a discharge gas to the ion generation chamber, a porous electrode for supplying accelerated electrons to the ion generation chamber from an electron generation chamber, causing the accelerated electrons to collide against the discharge gas to generate a plasma containing ions in the ion generation chamber. The housing have an ion extraction slit port through which the ions are extracted from the ion generation chamber outside the housing. An electrode is formed around the ion extraction port, for causing a local discharge around the ion extraction port so as to guide the ions in the plasma to the ion extraction port.Type: GrantFiled: February 16, 1990Date of Patent: February 18, 1992Assignee: Tokyo Electron LimitedInventors: Akira Koshiishi, Kohei Kawamura, Naoki Takayama
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Patent number: 5089746Abstract: A method for producing an ion beam for ion implantation by chemically enhanced bombardment of solids. The method is carried out in a reaction chamber having an anode and cathode and a cathode liner rich in a selected element, namely boron, arsenic, phosphorus or antimony. A non-poisonous feed gas is introduced into the reaction chamber and energy is supplied to the feed gas to generate a plasma in the reaction chamber. The constituents of the plasma react chemically with the selected element in the cathode liner and an electrical potential is established between the anode and the cathode so that ions in the plasma bombard the cathode liner. The chemical reaction and bombardment together generate an ion species in the plasma containing the selected element. A beam of ions containing the selected species is then extracted from the plasma.Type: GrantFiled: February 14, 1989Date of Patent: February 18, 1992Assignee: Varian Associates, Inc.Inventors: Stephen S. Rosenblum, Kenneth J. Doniger
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Patent number: 5089707Abstract: An ion generating apparatus utilizing a vacuum chamber with an anode and multiple, selectively operable, cathodes in the chamber. The vacuum chamber is grounded and all but the cathode or cathodes selected for use are grounded to the chamber. The anode is a high-transparency screen, preferably formed from a copper alloy. The cathodes are preferably arranged in a generally circular array, parallel to each other, so that any can be fired by a single trigger cathode assembly positioned adjacent to the array. A linear feed mechanism for moving any cathode toward the anode as cathode material is consumed may be provided.Type: GrantFiled: November 14, 1990Date of Patent: February 18, 1992Assignee: ISM Technologies, Inc.Inventors: Gustav D. Magnuson, Joseph F. Tooker, James R. Treglio
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Patent number: 5086256Abstract: An Mev ion implantation apparatus which does not contaminate a sample substrate with heavy metal particles. The apparatus includes an external resonance circuit type RFQ accelerator incluidng undulated quadrupole electrodes and a separate radio frequency resonance circuit for generating a radio frequency high voltage to be supplied to the electrodes. The undulated quadrupole electrodes and at least a part of metallic supports for supporting the electrodes and voltage supplying lines are provided with a surface coating of silicon, silicon doped with an impurity such as boron, phosphorus, or arsenic, or a light element having a mass number of 28 or less, such as carbon.Type: GrantFiled: November 20, 1989Date of Patent: February 4, 1992Assignee: The Agency of Industrial Science and TechnologyInventors: Katsumi Tokiguchi, Kensuke Amemiya, Noriyuki Sakudo, Takayoshi Seki
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Patent number: 5086226Abstract: A method and apparatus for analyzing solid sample materials mounted externally to the apparatus is provided wherein a low pressure glow discharge is initiated by applying a radio frequency potential to an integral, continuous solid sample and an electrically grounded anode in the presence of an inert gas, the glow discharge being maintained such that the inert gas is ionized and the ionized gas sputters sample material, the sputtered sample material then passing into an analyzer region for analysis.Type: GrantFiled: October 1, 1990Date of Patent: February 4, 1992Assignee: Clemson UniversityInventor: R. Kenneth Marcus
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Patent number: 5083061Abstract: An ion source according to the present invention includes a first chamber, including a main chamber having an electron generating arrangement therein, and a sub-chamber communicating with the main chamber through a nozzle, for producing a first plasma by a discharge. A supply is also provided for supplying a first gas for a discharge into the main chamber, as well as an electron extracting arrangement for extracting electrons from the first plasma. Also included are a second chamber for producing a second plasma by discharge excitation of the extracted electrons and ionizing a second gas as a source gas, a further supply for supplying the second gas into the second chamber, and a magnetic field generator for generating a magnetic field for guiding the extracted electrons toward the second chamber. The electron extracting arrangement includes an electrode between the sub-chamber and the second chamber.Type: GrantFiled: November 15, 1990Date of Patent: January 21, 1992Assignee: Tokyo Electron LimitedInventors: Akira Koshiishi, Kohei Kawamura
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Patent number: 5075594Abstract: A hollow cathode capable of self-heating by back ion bombardment to a thermionic emission temperature axially discharges therefrom an ionized plasma of an ambient gas such as xenon. Electrons are axially or radially extractable from the plasma by an anode. A voltage is applied to a keeper electrode disposed between the cathode and anode to sustain plasma discharge of the gas between the cathode and keeper electrode. A control electrode is disposed between the keeper electrode and the anode. Application of a positive voltage (relative to the cathode) to the control electrode causes the plasma discharge to extend from the cathode to the anode, thus closing the switch. Application of a negative control electrode voltage, or simply returning the control electrode to cathode potential, causes the plasma discharge to retract back to the area of the keeper electrode, thereby opening the switch.Type: GrantFiled: September 13, 1989Date of Patent: December 24, 1991Assignee: Hughes Aircraft CompanyInventors: Robert W. Schumacher, Robert L. Poeschel
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Patent number: 5070275Abstract: An ion implantation device which is characterized in that source gas is supplied to an ion source from a gas cylinder provided in an external portion of the ion implantation device to maintain the cleanness of the clean room by reducing the frequency of exchanging gas cylinder for new one.Type: GrantFiled: June 19, 1990Date of Patent: December 3, 1991Assignee: Tokyo Electron LimitedInventors: Shigehito Ibuka, Hisashi Kondo, Shigeru Sagami, Koji Sumi
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Patent number: 5065018Abstract: A time-of-flight spectrometer includes a gridless ion source for generating ions. The ions are reflected by a reflector and detected in a detector. Different types of ions, indicative of the chemical make-up of a sample, have different times of flight. The ion source includes apertured gridless electrodes to establish a specific potential distribution. The potential distribution can be established utilizing electrodes having apertures of varying diameters. The spectrometer also includes mechanical structure for varying the angle of the detector.Type: GrantFiled: December 14, 1989Date of Patent: November 12, 1991Assignee: Forschungszentrum Juelich GmbHInventors: Paul S. Bechtold, Matija Mihelcic, Kurt Wingerath
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Patent number: 5055963Abstract: Air ionizing apparatus that produces both positive and negative ions has a housing with air inlet and outlet passages, a plurality of spaced apart air ionizing electrodes and a high voltage supply which applies positive and negative voltages to separate electrodes. A fan creates an airflow that carries the ions out of the housing, the fan preferably being between the electrodes and the outlet passages to promote intermixing of positive and negative ions. The high voltage region of the high voltage supply is isolated from any direct current path to ground. The electrodes then inherently acquire a D.C. voltage bias, when necessary, that maintains an equal output of positive and negative ions without requiring use of an air ion sensor and feedback circuit for the purpose.Type: GrantFiled: August 15, 1990Date of Patent: October 8, 1991Assignee: Ion Systems, Inc.Inventor: Leslie W. Partridge
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Patent number: 5055696Abstract: In locally reactive etching by irradiating to a multilayered workpiece reactive beam generated by extracting the reactant gas ionized or by irradiating such focussing beam as ion beam, electron beam or laser beam to the multilayered workpiece in an atmosphere of reactant gas; each layer of a multilayered device comprising a plurality of layers formed on a substrate can be accurately and quickly eteched by detecting the change of the material of the layer currently being etched and after detecting the change of material, switching reactant gas to be ionized or atmospheric reactant gas to one complying with the material of the layer currently being etched. This multilayered device micro etching method can be readily put into practice by a multilayered device micro etching system further comprising means for detecting the change of the material of layer to be etched and means for switching and supplying a plurality of reactant gases, in a micro etching appratus for performing locally rective etching.Type: GrantFiled: August 8, 1989Date of Patent: October 8, 1991Assignee: Hitachi, Ltd.Inventors: Satoshi Haraichi, Fumikazu Itoh, Akira Shimase, Takahiko Takahashi
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Patent number: 5053678Abstract: A microwave ion source suitable for an apparatus which requires ions of an element of high reactivity such as oxygen, fluorine, etc., the microwave ion source being arranged to transmit microwaves between outer and inner conductors of a coaxial line. An ion extraction electrode is formed at least partly of a low magnetic permeability material while an acceleration electrode is formed of a high magnetic permeability material. The acceleration electrode is formed so as to have a structure in which a low magnetic permeability material of a certain thickness is stacked on the high magnetic permeability material at a plasma chamber side and openings of ion exit holes are formed in the portion of the low magnetic permeability material. A permanent magnet constituting a magnetic field generating means is provided to surround the microwave lead-in coaxial line. The direction of magnetization of the permanent magnet is made to coincide with the axial direction of the coaxial line.Type: GrantFiled: March 15, 1989Date of Patent: October 1, 1991Assignee: Hitachi, Ltd.Inventors: Hidemi Koike, Noriyuki Sakudo, Katsumi Tokiguchi, Takayoshi Seki, Kensuke Amemiya
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Patent number: 5051582Abstract: The method of producing specific cluster ions utilizing an ionization source to produce ions which are then sorted or resolved according to velocity and mass. The selected ions are passed through a growth chamber containing a gaseous vapor of a specified element and are coated by the vapor to provide coated cluster ions. The coated cluster ions are mass selected and held in an ion trap.Type: GrantFiled: September 6, 1989Date of Patent: September 24, 1991Assignee: The United States of America as represented by the Secretary of the Air ForceInventors: John T. Bahns, William C. Stwalley
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Patent number: 5049784Abstract: An electron generating apparatus for an ion source for example, which is capable of prolonging service life and facilitating the exchange of its filament has been proposed. The electron generating apparatus includes an electron generating chamber having a discharging gas supply hole and electron extracting hole, a pair of conductive filament support members mounted in the chamber through an insulating plate, and a filament detachably fixed on the filament support members. At least one of the filament support members is provided with an overhang to cover at least part of a region between the lower ends of the filament.Type: GrantFiled: May 24, 1990Date of Patent: September 17, 1991Assignee: Tokyo Electron LimitedInventor: Masahiko Matsudo
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Patent number: 5036252Abstract: A monoenergetic ion source for the generation of an ion beam is described with the ion energies which lie below 100 eV and also above 5 keV being capable of being freely selected so that the whole range of intermediate energies and independently of the selected ion current density with the aid of the operating parameters of the source. The ion current density is so freely adjustable independently of the ion energy. The ion source is provided with an optical beam focussing system and can in particular also be used to produce metal ions. This ion source also makes a special coating process possible which is likewise described here.Type: GrantFiled: April 24, 1989Date of Patent: July 30, 1991Assignee: Hauzer Holding BVInventor: Horst Lob
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Patent number: 5034612Abstract: Ion source methods and apparatus include an ion generating element for providing a reservoir of flowing liquid source material, accelerating elements for providing an electric field around the ion generating element, and shielding elements. The shielding element is constructed from a material including atoms which, if backsputtered onto the ion generating element, do not substantially degrade ion source performance.Type: GrantFiled: December 3, 1990Date of Patent: July 23, 1991Assignee: Micrion CorporationInventors: Billy W. Ward, Randall G. Percival
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Patent number: 5030885Abstract: A plasma source of charged particles includes a particle extraction control device consisting of an electrode having an exit hole in it and a planar solenoid arranged to produce, when energized, a magnetic field across the exit hole in the electrode, the magnitude of the magnetic field and potentials applied to extraction electrodes being variable so as to enable different charged particles to be emitted by the source.Type: GrantFiled: August 22, 1989Date of Patent: July 9, 1991Assignee: United Kingdom Atomic Energy AuthorityInventor: Andrew J. T. Holmes
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Patent number: 5026997Abstract: An ion source for creating an ion beam. The source includes an ionization chamber having one wall that defines a generally elliptical opening for allowing ions to exit the ionization chamber. Use of an elliptical (in section) ion beam has advantages over a rectangular ion beam which allow the integrity of a relatively high current ion beam to be maintained as ions travel to a beam treatment workstation. A dual configuration extraction electrode assembly also provides for a range of extraction energies from a single source.Type: GrantFiled: November 13, 1989Date of Patent: June 25, 1991Assignee: Eaton CorporationInventor: Victor M. Benveniste
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Patent number: 5025194Abstract: A vapor and ion source includes, in a low pressure chamber, an anode (M), a cathode (K) and a device (A) for applying a magnetic field (B). The cathode (K) is an equipotential cavity (10) provided with an aperture (11) in a front plate. A magnetic field (B) orthogonal to the front plate is applied thereto. The material to be ionized (15) is arranged inside the cavity.Type: GrantFiled: November 30, 1988Date of Patent: June 18, 1991Assignee: Centre National de la Recherche ScientifiqueInventors: Jacques Menet, Olivier de Gabrielli
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Patent number: 5022977Abstract: An ion generation apparatus utilizes microwaves and employs the electron cyclotron resonance phenomenon to generate plasma. The plasma is confined in a plasma generation chamber by a mirror field, whereby high density plasma is obtained. A target disposed within the plasma generation chamber is sputtered by the ions in the high density plasma, so that a large number of ions is produced. This ion generation apparatus can be employed in a thin film forming apparatus which forms a thin film on the surface of a substrate by directing the ions and neutral particles to the substrate. An ion extracting grid may be included. Permanent magnets may be disposed at the upper and lower ends of the target disposed in the plasma generation chamber so as to permit the leakage of magnetic flux to the inner surface of the target. This permits the film to be formed at a high rate even when the voltage applied to the target is relatively low.Type: GrantFiled: May 25, 1988Date of Patent: June 11, 1991Assignee: Nippon Telegraph and Telephone CorporationInventors: Morito Matsuoka, Ken-ichi Ono
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Patent number: 5019712Abstract: An ion cluster beam can be focused and delivered to a target with a selected energy range by directing the ionized beam through a beam crossover, and furnishing an energy-selecting apertured plate adjacent to the beam crossover so that the center of the beam passes through the aperture. The beam crossover is distributed along the beam axis due to the different energies of the particles in the beam. The apertured plate in the beam path removes from the beam those clusters having energies lower than and/or greater than an acceptable energy range, depending upon its placement and diameter, to provide energy selectivity. The portion of the beam passing through the aperture is imaged upon the target by a lens, and the beam may be deflected by deflector coils to write patterns across the surface of the target.Type: GrantFiled: June 8, 1989Date of Patent: May 28, 1991Assignee: Hughes Aircraft CompanyInventor: Wolfgang Knauer
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Patent number: 5017835Abstract: A high-frequency ion source for the production of an ion beam using electron cyclotron resonance has a tubular vessel whose shape matches the desired shape of the beam. The vessel, which is designed to accommodate an ionizable gas, is surrounded by a coil, and the coil is coupled to a high-frequency generator via a resonant circuit. A Helmholtz coil pair matched to the shape of the vessel is arranged to generate a magnetic field which is directed normal to the axis of the coil surrounding the vessel. The vessel is clamped between two plates and one of the plates contains a system for extracting ions from the vessel. The extraction system includes a plurality of spaced electrodes which function to attract and accelerate ions. The electrodes are formed with slotted openings which shape a stream of ions flowing out of the vessel into the form of a flat beam. An additional electrode can be provided to suppress the escape of electrons from the beam back into the vessel.Type: GrantFiled: November 20, 1989Date of Patent: May 21, 1991Inventor: Hans Oechsner
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Patent number: 5015862Abstract: A method for modulating a liquid metal ion source includes generating an ion beam, directing a light beam at the liquid metal ion source and inducing a modulation in the ion beam by modulating the light beam.An apparatus for carrying out the invention includes a light beam source for generating a light beam, a modulator for modulating the light beam and a mechanism for directing the modulated light beam at the light metal ion source.Type: GrantFiled: January 22, 1990Date of Patent: May 14, 1991Assignee: Oregon Graduate Institute of Science & TechnologyInventors: J. Fred Holmes, Jonathan H. Orloff, Karl J. Jousten
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Composite apparatus with secondary ion mass spectrometry instrument and scanning electron microscope
Patent number: 5008537Abstract: A composite apparatus is disclosed which includes in combination a secondary ion mass spectrometry instrument and a scanning electron microscope. A liquid metal ion source and an ion source other than the liquid metal ion source are installed in the same apparatus so that an ion beam emitted from the liquid metal ion source and an ion beam emitted from the ion source other than the liquid metal ion source are aligned with each other on a primary beam axis which is an optical axis of an irradiating system. The liquid metal ion source is disposed in rear of a primary ion separating device which mass-separates the ion beam emitted from the ion source other than the liquid metal ion source. Further, an electron gun is installed in the same apparatus so that an electron beam emitted from the electron gun is aligned with the ion beam on the primary beam axis.Type: GrantFiled: September 20, 1989Date of Patent: April 16, 1991Assignees: Hitachi, Ltd., Hitachi Instrument Engineering Co., Ltd.Inventors: Hiroshi Toita, Hifumi Tamura, Issei Tobita, Hiroshi Iwamoto -
Patent number: 5008594Abstract: A self-balancing circuit for convection air ionizers with a passively balanced ion emitter and collector including a circuit in which the ion emitter and the collector are capacitively isolated from external charge sources or sinks for maintaining balance in the positive and negative charge for producing a zero average current flow and a charge balanced ionized airstream.Type: GrantFiled: February 16, 1989Date of Patent: April 16, 1991Assignee: Chapman CorporationInventors: Ralph W. Swanson, Daniel F. Gagnon, Donald G. Parent
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Patent number: 5006706Abstract: A method and apparatus for analyzing solid sample materials is provided wherein a low pressure glow discharge is initiated by applying a radio frequency potential to an integral, continuous sample cathode and an electrically grounded anode in the presence of an inert gas, the glow discharge being maintained such that the inert gas is ionized and the ionized gas sputters sample material, the sputtered sample material then passing into an analyzer region for analysis.Type: GrantFiled: May 31, 1989Date of Patent: April 9, 1991Assignee: Clemson UniversityInventor: R. Kenneth Marcus
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Patent number: 5006715Abstract: An ion evaporation source for tin ions is prepared by coating a source element with a wettability enhancing gallium coating, and then loading the source with tin. The tin may be the naturally occurring tin, but can be an enriched tin containing a higher concentration of Sn.sup.120. The source produces a beam having a high fraction of Sn.sup.+ and Sn.sup.++ ions, and a small amount of the ionized wettability coating material. All but the desired ions are readily separated from the beam.Type: GrantFiled: May 16, 1989Date of Patent: April 9, 1991Assignee: Hughes Aircraft CompanyInventors: Peter B. Back, Mark W. Utlaut, William M. Clark, Jr.