Abstract: A semiconductor device structure is provided. The semiconductor device structure includes an isolation layer formed over a substrate, and a plurality of nanostructures formed over the isolation layer. The semiconductor device structure includes a gate structure wrapped around the nanostructures, and an S/D structure wrapped around the nanostructures. The semiconductor device structure also includes a first oxide layer between the substrate and the S/D structure. The first oxide layer and the isolation layer are made of different materials, and the first oxide layer is in direct contact with the isolation layer, and a sidewall surface of the S/D structure is aligned with a sidewall surface of the first oxide layer.

Abstract: A power semiconductor device comprises a semiconductor body, a gate electrode, and an extraction electrode, wherein the semiconductor body comprises a source region of a first conductivity type, well region of a second conductivity type different from the first conductivity type at the gate electrode, a drift region which is of the first conductivity type, and a barrier region which is of the first conductivity type, the barrier region is located between the drift region and the extraction electrode.

Abstract: The present disclosure provides a power semiconductor device and a manufacturing method thereof. In order to provide a power semiconductor device with improved latch-up immunity but without increasing device power loss and costs, a hole current path in a fourth semiconductor region of a first conductivity type between a gate trench and a dummy gate trench is shortened by providing a first contact trench between two adjacent gate trenches, and providing a second contact trench between the gate trench and a dummy gate trench such that the width and depth of the second contact trench are respectively greater than those of the first contact trench. The effect of the hole current on the potential rise of the fourth semiconductor region of the first conductivity type is suppressed, thereby suppressing the latch-up effect, and enhancing the switching reliability.

Abstract: A semiconductor device includes a semiconductor layer of a first conductivity type having a device forming region and an outside region, an impurity region of a second conductivity type formed in a surface layer portion of a first main surface in the device forming region, a field limiting region of a second conductivity type formed in the surface layer portion in the outside region and having a impurity concentration higher than that of the impurity region, and a well region of a second conductivity type formed in a region between the device forming region and the field limiting region in the surface layer portion in the outside region, having a bottom portion positioned at a second main surface side with respect to bottom portions of the impurity region and the field limiting region, and having a impurity concentration higher than that of the impurity region.

Abstract: A semiconductor device may include: a drift region of a first conductivity type; a base region of a second conductivity type arranged on the drift region; an emitter region of the first conductivity type arranged on the base region; a field stop region of the first conductivity type arranged in contact with the drift region; a collector region of the second conductivity type in contact with the field stop region; a main gate electrode electrically insulated from the base region and the collector region; a control gate electrode electrically insulated from the base region and the collector region; a gate pad on the drift region; a first resistor electrically connected between the gate pad and the main gate electrode; and a second resistor electrically connected between the gate pad and the control gate electrode. A resistance value of the first resistor may be greater than the second resistor thereof.

Abstract: There is provided a semiconductor device including: an anode electrode that is provided on a front surface side of a semiconductor substrate; a drift region of a first conductivity type that is provided in the semiconductor substrate; a first anode region of a first conductivity type that is in Schottky contact with the anode electrode; and a second anode region of a second conductivity type that is different from the first conductivity type, in which the first anode region has a doping concentration lower than or equal to a doping concentration of the second anode region, and is spaced from the drift region by the second anode region.

Abstract: A semiconductor device according to an embodiment includes: a first trench and a second trench extending in a first direction; a first gate electrode in the first trench; a second gate electrode in the second trench; a first gate wire including a first portion extending in a second direction perpendicular to the first direction and a third portion extending in the second direction; a second gate wire including a first portion extending in the second direction and a third portion extending in the second direction; a first gate electrode pad; and a second gate electrode pad. The first portion of the second gate wire is between the first portion and the third portion of the first gate wire, and the third portion of the first gate wire is between the first portion and the third portion of the second gate wire.

Abstract: A semiconductor device includes a semiconductor body having a base region incorporating a field stop zone where the base region and the field stop zone are both formed using an epitaxial process. Furthermore, the epitaxial layer field stop zone is formed with an enhanced doping profile to realize improved soft-switching performance for the semiconductor device. In some embodiments, the enhanced doping profile includes multiple doped regions with peak doping levels where a first doped region adjacent to a first side of the field stop zone has a first peak doping level that is not higher than a last peak doping level of a last doped region adjacent to the base region. The epitaxial layer field stop zone of the present invention enables complex field stop zone doping profiles to be used to obtain the desired soft-switching characteristics in the semiconductor device.

Abstract: In one embodiment, an apparatus includes at least one vertical transistor, where the at least one vertical transistor includes: a substrate comprising a semiconductor material, an array of three dimensional (3D) structures above the substrate, a gate region, and an isolation region positioned between the 3D structures. Each 3D structure includes the semiconductor material. Each 3D structure also includes a first region having a first conductivity type and a second region having a second conductivity type, the second region including a portion of at least one vertical sidewall of the 3D structure. The gate region is present on a portion of an upper surface of the second region and the gate region is coupled to a portion of the at least one vertical sidewall of each 3D structure.

Abstract: A semiconductor device includes a drift region of a first conductivity type in a semiconductor body having a first main surface, and a body region of a second conductivity type between the drift region and the first main surface. Trenches extend into the semiconductor body from the first main surface and pattern the semiconductor body into mesas including a first mesa between first and second trenches, and a second mesa between second and third trenches. An electrode in the first trench is one electrode out of an electrode group of an electrode electrically coupled to a first gate driver output, an electrode electrically coupled to a second gate driver output, and an electrode electrically connected to a first load contact. An electrode in the second trench is another electrode out the electrode group, and an electrode in the third trench is a remaining electrode out of the electrode group.

Abstract: A semiconductor device includes first to fourth electrodes, a semiconductor portion, and first and second insulating films. The semiconductor portion includes first to third semiconductor layers. The second electrode is in contact with the third semiconductor layer and is spaced from the second semiconductor layer, the third semiconductor layer, and the second electrode. The first insulating film covers the third electrode. The fourth electrode is connected to the second electrode, and is spaced from the first semiconductor layer and the third electrode. The second insulating film is provided on a side surface of the fourth electrode, faces the first semiconductor layer through an air gap, and increases in thickness toward the first direction.

Abstract: Provided are a semiconductor device in which the lifetime of holes is controlled and the switching loss is suppressed, and a method of manufacturing the same. Provided are a semiconductor substrate having a drift layer of a first conductivity type between a first main surface and a second main surface opposite to the first main surface, a first buffer layer of the first conductive type provided between the drift layer and the second main surface in contact with the drift layer, having a resistivity lower than that of the drift layer, and having an impurity concentration higher than that of the drift layer, and a high resistivity layer provided between the first buffer layer and the second main surface and having a resistivity higher than that of the drift layer.

Abstract: A semiconductor device includes a semiconductor layer of a first conductivity type having a device forming region and an outside region, an impurity region of a second conductivity type formed in a surface layer portion of a first main surface in the device forming region, a field limiting region of a second conductivity type formed in the surface layer portion in the outside region and having a impurity concentration higher than that of the impurity region, and a well region of a second conductivity type formed in a region between the device forming region and the field limiting region in the surface layer portion in the outside region, having a bottom portion positioned at a second main surface side with respect to bottom portions of the impurity region and the field limiting region, and having a impurity concentration higher than that of the impurity region.

Abstract: According to one embodiment, a semiconductor device includes first, and second conductive members, a first electrode including first and second electrode regions, a second electrode electrically connected to a first semiconductor film portion, a first semiconductor region including first to fourth partial regions, a second semiconductor region including the first semiconductor film portion, a third semiconductor region including a first semiconductor layer portion, a fourth semiconductor region provided between the first electrode and the first semiconductor region, and a first insulating member including insulating portions. The first partial region is between the first electrode region and the first conductive member. The second partial region is between the second electrode region and the second conductive member. The third partial region is between the first and second partial regions and between the first electrode and the fourth partial region.

Abstract: A semiconductor device includes a transistor having a drift region of a first conductivity type in a semiconductor substrate having a first main surface, a body region of a second conductivity type between the drift region and first main surface, and trenches in the first main surface which pattern the substrate into mesas. The trenches include an active trench and first and second source trenches. A source region of the first conductivity type is in a first mesa arranged adjacent to the active trench. A second mesa between the first and second source trenches is in contact with at least one source trench. A barrier region of the first conductivity type at a higher doping concentration than the drift region is arranged between the body and drift regions in the second mesa. A vertical size of the barrier region is at least twice a width of the second mesa.

Abstract: Provided is a semiconductor device comprising an active region and an edge region, the semiconductor device comprising: a drift region of a first conductivity type provided in the semiconductor substrate; a base region of a second conductivity type provided above the drift region; a first collector region of the second conductivity type provided below the drift region in the active region; and a second collector region of the second conductivity type provided below the drift region in the edge region, wherein a doping concentration of the first collector region is higher than a doping concentration of the second collector region, wherein an area of the first collector region is of the same size as an area of the second collector region or larger than the area of the second collector region, in a top plan view.

Abstract: A semiconductor element includes a semiconductor part, first to third electrodes and a control electrode. The first electrode is provided at a front side of the semiconductor part. The second and third electrodes are provided at a back side of the semiconductor part. The control electrode is provided between the semiconductor part and the first electrode. The semiconductor part includes first and third layers of a first conductivity type and second and fourth layers of a second conductivity type. The first layer is provided between the first and second electrodes and between the first and third electrodes. The first layer is connected to the third electrode at the back side. The second layer is provided between the first layer and the first electrode. The third layer is provided between the second layer and the first electrode. The fourth layer is provided between the second electrode and the first layer.

Abstract: A semiconductor device in which a transistor and a diode are formed on a common semiconductor substrate is provided. The semiconductor substrate includes a transistor region in which a transistor is formed and a diode region in which a diode is formed. At least one first electrode on a second main surface side of the transistor region and at least one second electrode on a second main surface side of the diode region are made of different materials.

Abstract: A semiconductor device includes an N-type drift layer provided between a first main surface and a second main surface of the semiconductor substrate and an N-type buffer layer provided between the N-type drift layer and the first main surface and having a higher impurity peak concentration than the N-type drift layer. The N-type buffer layer has a structure that a first buffer layer, a second buffer layer, a third buffer layer, and a fourth buffer layer are disposed in this order from a side of the first main surface. When a distance from an impurity peak position of the first buffer layer to an impurity peak position of the second buffer layer is L12 and a distance from an impurity peak position of the second buffer layer to an impurity peak position of the third buffer layer is L23, a relationship of L23/L12?3.5 is satisfied.

Abstract: A semiconductor device includes first and third semiconductor layers of a first conductivity type, and second, fourth and fifth semiconductor layers of a second conductivity type. The first semiconductor layer is provided on the fifth semiconductor layer. The second semiconductor layer is provided on the first semiconductor layer. The third and fourth semiconductor layers are arranged along the second semiconductor layer. In a plane parallel to an upper surface of the second semiconductor layer, the fourth semiconductor layer has a surface area greater than a surface area of the third semiconductor layer. The device further includes first to third electrodes, and first control electrode. The first to third electrodes are electrically connected to the third to fifth semiconductor layers, respectively. The first control electrode is provided in a first trench extending into the first semiconductor layer from an upper surface of the third semiconductor layer.

Abstract: Disclosed herein are IC structures that implement field plates for III-N transistors in a form of electrically conductive structures provided in a III-N semiconductor material below the polarization layer (i.e., at the “backside” of an IC structure). In some embodiments, such a field plate may be implemented as a through-silicon via (TSV) extending from the back/bottom face of the substrate towards the III-N semiconductor material. Implementing field plates at the backside may provide a viable approach to changing the distribution of electric field at a transistor drain and increasing the breakdown voltage of an III-N transistor without incurring the large parasitic capacitances associated with the use of metal field plates provided above the polarization material. In addition, backside field plates may serve as a back barrier for advantageously reducing drain-induced barrier lowering.

Abstract: An object is to provide a technique of improving productivity of a semiconductor device. A first buffer layer includes a first portion located in a thickness direction of a semiconductor substrate from a main surface and having a first peak of an N type impurity concentration and a second portion located farther away from the main surface than the first portion and having a second peak of an N type impurity concentration. A distance from the main surface to the first portion is equal to or smaller than 4.0 ?m, and a distance from the first portion to the second portion is equal to or larger than 14.5 ?m. An N type impurity concentration of a portion between the first portion and the second portion is higher than an N type impurity concentration of a drift layer.

Abstract: Examples of a semiconductor device includes a transistor region formed in a semiconductor substrate having a first conductivity type drift layer, and a diode region formed to be adjacent to the transistor region in the semiconductor substrate, wherein the diode region has a second conductivity type anode layer formed on the drift layer and a first conductivity type cathode layer formed on the lower side of the drift layer, and the cathode layer has an adjacent region contacting the transistor region, the adjacent region having a depth, from a lower surface of the semiconductor substrate, which becomes shallower toward the transistor region and having first conductivity type impurity concentration which decreases toward the transistor region.

Abstract: A semiconductor device includes: a semiconductor substrate; trenches formed in the substrate and extending lengthwise in parallel with one another, the trenches having connecting regions which interconnect adjacent ones of the trenches; semiconductor mesas separated from one another by the trenches in a first lateral direction and by the connecting regions in a second lateral direction transverse to the first lateral direction; a gate electrode and a field electrode below the gate electrode in at least some of the trenches, and dielectrically insulated from each other and from the semiconductor substrate; first contacts vertically extending into one or more transistor device regions in the semiconductor mesas; and second contacts vertically extending into the field electrodes in the connecting regions such that the gate electrodes are uninterrupted by the second contacts. Corresponding methods of producing such a semiconductor device are also described.

Abstract: A power semiconductor device having a power semiconductor transistor configuration includes: a semiconductor body having a front side coupled to a first load terminal structure, a backside coupled to a second load terminal structure, and a lateral chip edge; an active region for conducting a load current in a conducting state; and an edge termination region separating the active region and lateral chip edge. At the front-side, the edge termination region includes a protection region devoid of any metallic structure, unless the metallic structure is electrically shielded from below by a polysilicon layer that extends further towards the lateral chip edge than the metallic structure by a lateral distance of at least 20 ?m. In a blocking state, the protection region accommodates a voltage change of at least 90% of a blocking voltage inside the semiconductor body in a lateral direction from the active region towards the lateral chip edge.

Abstract: An integrated circuit includes an extended drain MOS transistor. The substrate of the integrated circuit has a lower layer with a first conductivity type. A drain well of the extended drain MOS transistor has the first conductivity type. The drain well is separated from the lower layer by a drain isolation well having a second, opposite, conductivity type. A source region of the extended drain MOS transistor is separated from the lower layer by a body well having the second conductivity type. Both the drain isolation well and the body well contact the lower layer. An average dopant density of the second conductivity type in the drain isolation well is less than an average dopant density of the second conductivity type in the body well.

Abstract: A semiconductor device of an embodiment includes an element region and a termination region surrounding the element region. The element region includes a gate trench, a first silicon carbide region of n-type, a second silicon carbide region of p-type on the first silicon carbide region, a third silicon carbide region of n-type on the second silicon carbide region, and a fourth silicon carbide region of p-type sandwiches the first silicon carbide region and the second silicon carbide region with the gate trench, the fourth silicon carbide region being deeper than the gate trench. The termination region includes a first trench surrounding the element region, and a fifth silicon carbide region of p-type between the first trench and the first silicon carbide region, the fifth silicon carbide region same or shallower than the fourth silicon carbide region. The semiconductor device includes a gate electrode, a first electrode, and a second electrode.

Abstract: Directly beneath p?-type base regions, n-type storage regions are provided. The storage regions contain hydrogen donors as an impurity and have an impurity concentration higher than that of the n?-type drift region. The storage regions are formed by hydrogen ion irradiation from a back surface of a semiconductor substrate. The storage regions have a peak hydrogen concentration and are at positions that coincide with where the hydrogen ions have been irradiated. By the hydrogen ion irradiation, a crystal defect region that is a carrier lifetime killer region is formed concurrently with the storage regions, closer to the back surface of the semiconductor substrate than are storage regions. The crystal defect region has a crystal defect density with a peak density at a position closer to the back surface of the semiconductor substrate than are the storage regions. A semiconductor device having such storage regions and a carrier lifetime killer region is enabled.

Abstract: A doping concentration distribution in an accumulation region in a depth direction of a semiconductor substrate has a maximum portion at which a doping concentration reaches a maximum value, an upper gradient portion in which the concentration decreases from the maximum portion to a base region, and a lower gradient portion in which the concentration decreases from the maximum portion to a drift region. When a full width at half maximum determined by setting a depth position of the maximum portion as a range of impurity implantation with reference to a range-full width at half maximum characteristic according to a material of the substrate and a type of impurities contained in the accumulation region is set as a standard full width at half maximum, a full width at half maximum of the distribution in the accumulation region is 2.2 times the standard full width at half maximum or greater.

Abstract: A leadframe includes a first die attach pad (“DAP”) having a first longitudinally extending edge surface and a second DAP having a first longitudinally extending edge surface. The second DAP is positioned with the first longitudinally extending edge surface thereof in adjacent, laterally and vertically spaced relationship with the first longitudinally extending edge surface of the first DAP.

Abstract: A semiconductor device wherein a hydrogen concentration distribution has a first hydrogen concentration peak and a second hydrogen concentration peak and a donor concentration distribution has a first donor concentration peak and a second donor concentration peak in a depth direction, wherein the first hydrogen concentration peak and the first donor concentration peak are placed at a first depth and the second hydrogen concentration peak and the second donor concentration peak are placed at a second depth deeper than the first depth relative to the lower surface is provided.

Abstract: A power semiconductor device includes a substrate and a semiconductor element bonded onto a first surface of the substrate through use of a sintered metal bonding material. The substrate has a plurality of dimples formed in the first surface and located outside a location immediately below a heat generation unit of the semiconductor element. The sintered metal bonding material is supplied onto the substrate after the formation of the dimples, and the semiconductor element is bonded to the substrate through application of heat and a pressure thereto.

Abstract: A semiconductor device includes first and second electrodes, a semiconductor part therebetween; first and second control electrodes each in a trench at the frontside of the semiconductor part. The semiconductor part includes first to sixth layers. The first and third layers are of a first conductivity type. Other layers are of a second conductivity type. The first layer extends between the first electrode at the backside and the second electrode at the frontside. The second layer is provided between the first layer and the second electrode. The third and fourth layers each are selectively provided between the second layer and the second electrode. The fifth layer is provided between the first layer and the first electrode. The sixth layer is provided between the first layer and the second control electrode. The sixth layer extends along an insulating film between the semiconductor part and the second control electrode.

Abstract: A semiconductor device includes a substrate having opposed first and second major surface, an active area, and a termination area. Insulated trenches extend from the first major surface toward the second major surface, each of the insulated trenches including a conductive field plate and a gate electrode overlying the conductive field plate, the gate electrode being separated from the field plate by a gate-field plate insulator. The field plate extends longitudinally in both of the active and termination areas and the gate electrode is absent in the termination area. A body region of a first conductivity type extends laterally between pairs of the insulated trenches. First and second spacer regions of a second conductivity type extend laterally between the pairs of the insulated trenches at the termination area to produce segments of the first conductivity type between the first and second spacer regions that are isolated from the body region.

Abstract: A semiconductor device capable of suppressing the calorific value at the central portion of a wire bonding area is provided. A semiconductor device includes a plurality of IGBT cells in a cell area. An emitter electrode serves as a current path when a plurality of IGBT cells are in conductive state, and is formed to cover a plurality of IGBT cells. A wire is bonded to the emitter electrode. A dummy cell which does not perform a bipolar operation, is formed at least below a central portion of a wire bonding area which is an area at which the wire and the emitter electrode are bonded.

Abstract: A power semiconductor device includes a control cell for controlling a load current. The control cell is electrically connected to a load terminal structure on one side and to a drift region on another side. The drift region includes dopants of a first conductivity type. The control cell includes: a mesa extending along a vertical direction and including: a contact region having dopants of the first conductivity type or of a second conductivity type and electrically connected to the load terminal structure, and a channel region coupled to the drift region; a control electrode configured to induce a conduction channel in the channel region; and a contact plug including a doped semiconductive material and arranged in contact with the contact region. An electrical connection between the contact region and load terminal structure is established by the contact plug, a portion of which projects beyond lateral boundaries of the mesa.

Abstract: A semiconductor device includes a semiconductor layer of a first conductivity type having a first principal surface on one side and a second principal surface on the other side, the semiconductor layer in which a device formation region and an outer region outside the device formation region are set, a channel region of a second conductivity type formed in a surface layer portion of the first principal surface of the semiconductor layer in the device formation region, an emitter region of a first conductivity type formed in a surface layer portion of the channel region, a gate electrode formed at the first principal surface of the semiconductor layer in the device formation region, the gate electrode facing the channel region across a gate insulating film, a collector region of a second conductivity type formed in a surface layer portion of the second principal surface of the semiconductor layer in the device formation region, an inner cathode region of a first conductivity type formed in the surface layer po

Abstract: A semiconductor module, including a semiconductor chip that includes a switching device having a control electrode, and a control terminal connected to the control electrode, a first resistance being formed between the control electrode and the control terminal and having a positive temperature coefficient, and a second resistance connected to the control terminal, the second resistance having a negative temperature coefficient. A temperature coefficient of a combined resistance at the control terminal is zero or negative.

Abstract: A wide gap semiconductor device has: a first MOSFET region (M0) having a first gate electrode 10 and a first source region 30 provided in a first well region 20 made of a second conductivity type; a second MOSFET region (M1) provided below a gate pad 100 and having a second gate electrode 110 and a second source region 130 provided in a second well region 120 made of the second conductivity type; and a built-in diode region electrically connected to the second gate electrode 110. The second source region 130 of the second MOSFET region (M1) is electrically connected to the gate pad 100.

Abstract: The present invention relates to an insulated gate bipolar transistor (IGBT) and, more particularly, to an insulated gate bipolar transistor that has multiple mesas having different widths, configured to promote the buildup and accumulation of hole carriers, thereby facilitating relatively easy subsequent processing, while maximizing conductivity modulation.

Abstract: A current switching semiconductor device to be used in a power conversion device achieves both a low conduction loss and a low switching loss. The semiconductor device includes the IGBT in which only Gc gates are provided and an impurity concentration of the p type collector layer is high, and the IGBT in which the Gs gates and the Gc gates are provided and an impurity concentration of the p type collector layer is low. When the semiconductor device is turned off, the semiconductor device transitions from a state in which a voltage lower than a threshold voltage is applied to both the Gs gates and the Gc gates to a state in which a voltage equal to or higher than the threshold voltage is applied to the Gc gates prior to the Gs gates.

Abstract: According to an embodiment of a power semiconductor device, the device includes: a semiconductor substrate including an IGBT region having an IGBT and a diode region having a diode. The IGBT region includes a plurality of first trenches extending perpendicular to a first main surface of the semiconductor substrate. The diode region includes a plurality of second trenches extending perpendicular to the first main surface of the semiconductor substrate. An average lateral spacing between adjacent ones of the second trenches is greater than an average lateral spacing between adjacent ones of the first trenches. Additional power semiconductor device embodiments are described herein, as are corresponding methods of production.

Abstract: A semiconductor device having a semiconductor substrate that includes a first-conductivity-type substrate and a first-conductivity-type epitaxial layer, and a plurality of trenches reaching a predetermined depth from a main surface of the semiconductor substrate to terminate in the first-conductivity-type epitaxial layer. The semiconductor substrate includes a hydrogen-donor introduced part, of which a concentration of a hydrogen donor is greatest at a depth position that is separate from bottoms of the trenches by a distance at least two times of the depth of the trenches. The impurity concentration of an impurity dopant of the first-conductivity-type substrate being lower than that of the first-conductivity-type epitaxial layer.

Abstract: A device includes a first doped semiconductor region and a second oppositely doped semiconductor region that are separated by an undoped or lightly-doped semiconductor drift region. The device further includes a first electrode structure making an ohmic contact with the first doped semiconductor region, and a second electrode structure making a universal contact with the second doped semiconductor region. The universal contact of the second electrode structure allows flow of both electrons and holes into, and out of, the device.

Abstract: A semiconductor package fabrication method comprises the steps of providing a wafer, applying a seed layer, forming a photo resist layer, plating a copper layer, removing the photo resist layer, removing the seed layer, applying a grinding process, forming metallization, and applying a singulation process. A semiconductor package comprises a silicon layer, an aluminum layer, a passivation layer, a polyimide layer, a copper layer, and metallization. In one example, an area of a contact area of a gate clip is smaller than an area of a gate copper surface. The area of the contact area of the gate clip is larger than a gate aluminum surface. In another example, an area of a contact area of a gate pin is larger than an area of a gate copper surface. The area of the contact area of the gate pin is larger than a gate aluminum surface.

Abstract: There is provided a technique for suppressing the operation of a parasitic transistor in a semiconductor device having a voltage sense structure. The semiconductor device includes: a semiconductor layer; a first impurity region; a second impurity region; a first semiconductor region; a second semiconductor region; a first electrode; a second electrode; and a third electrode. The second impurity region includes a low lifetime region at least under the second semiconductor region. The low lifetime region is a region having a defect density higher than that in a surface layer of the second impurity region or a region in which a heavy metal is diffused.

Abstract: A semiconductor device of the present invention includes a semiconductor layer, a gate trench that defines a source region of a first conductivity type in the semiconductor layer, a channel region of a second conductivity type of a lower part of the source region, a source trench that passes through the source region and the channel region, an impurity region of the second conductivity type of a bottom part and a side part of the source trench, a source electrode on the semiconductor layer, and a highly-concentrated impurity region of the second conductivity type, the highly-concentrated impurity region having a contact portion connected to the source electrode at a surface of the semiconductor layer, the highly-concentrated impurity region passing through the source region and extending to a position deeper than the source region, the highly-concentrated impurity region having a concentration higher than the impurity region.

Abstract: An insulated gate power semiconductor device (1a), comprises in an order from a first main side (20) towards a second main side (27) opposite to the first main side (20) a first conductivity type source layer (3), a second conductivity type base layer (4), a first conductivity type enhancement layer (6) and a first conductivity type drift layer (5). The insulated gate power semiconductor device (1a) further comprises two neighbouring trench gate electrodes (7) to form a vertical MOS cell sandwiched between the two neighbouring trench gate electrodes (7). At least a portion of a second conductivity type protection layer (8a) is arranged in an area between the two neighbouring trench gate electrodes (7), wherein the protection layer (8a) is separated from the gate insulating layer (72) by a first conductivity type channel layer (60a; 60b) extending along the gate insulating layer (72).

Abstract: Disclosed is a semiconductor power device, including a semiconductor substrate; a MOSFET region formed on the semiconductor substrate, where the MOSFET region includes at least one MOSFET unit; and at least one collector region located in the semiconductor substrate, where the collector region and the MOSFET unit form an insulated gate bipolar transistor.

Abstract: There is provided a technique for suppressing the operation of a parasitic transistor in a semiconductor device having a voltage sense structure. The semiconductor device includes: a semiconductor layer; a first impurity region; a second impurity region; a first semiconductor region; a second semiconductor region; a first electrode; a second electrode; and a third electrode. The second impurity region includes a low lifetime region at least under the second semiconductor region. The low lifetime region is a region having a defect density higher than that in a surface layer of the second impurity region or a region in which a heavy metal is diffused.