Field Effect Transistor Patents (Class 257/192)
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Patent number: 9312183Abstract: A method for forming FinFETs having a capping layer for reducing punch through leakage includes providing an intermediate semiconductor structure having a semiconductor substrate and a fin disposed on the semiconductor substrate. A capping layer is disposed over the fin, and an isolation fill is disposed over the capping layer. A portion of the isolation fill and the capping layer is removed to expose an upper surface portion of the fin. Tapping layer and a lower portion of the fin define an interface dipole layer barrier, a portion of the capping layer operable to provide an increased negative charge or an increased positive charge adjacent to the fin, to reduce punch-through leakage compared to a fin without the capping layer.Type: GrantFiled: November 3, 2014Date of Patent: April 12, 2016Assignee: GLOBALFOUNDRIES INC.Inventors: Hoon Kim, Min Gyu Sung
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Patent number: 9306049Abstract: Hetero junction field effect transistors and methods of fabricating such transistors are disclosed wherein: a first compound semiconductor layer is provided on a substrate; a second compound semiconductor layer is provided on the first compound semiconductor layer; a gate insulating layer is provided on the second compound semiconductor layer; and a gate electrode is provided on the gate insulating layer such that the gate insulating layer penetrates the second compound semiconductor layer so as to be in contact with the first compound semiconductor layer.Type: GrantFiled: October 24, 2013Date of Patent: April 5, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: JaeHoon Lee, Chanho Park, NamYoung Lee
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Patent number: 9306051Abstract: To provide a semiconductor device having improved characteristics. The semiconductor device has, over a substrate thereof, a first buffer layer (GaN), a second buffer layer (AlGaN), a channel layer, and a barrier layer, a trench penetrating through the barrier layer and reaching the middle of the channel layer, a gate electrode placed in the trench via a gate insulating film, and a source electrode and a drain electrode formed on both sides of the gate electrode respectively. By a coupling portion in a through-hole reaching the first buffer layer, the buffer layer and the source electrode are electrically coupled to each other. Due to a two-dimensional electron gas produced in the vicinity of the interface between these two buffer layers, the semiconductor device can have an increased threshold voltage and improved normally-off characteristics.Type: GrantFiled: January 6, 2015Date of Patent: April 5, 2016Assignee: Renesas Electronics CorporationInventors: Yoshinao Miura, Tatsuo Nakayama, Takashi Inoue, Hironobu Miyamoto
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Patent number: 9299822Abstract: A semiconductor device includes a first semiconductor layer formed on a substrate; a second semiconductor layer and a third semiconductor layer formed on the first semiconductor layer; a fourth semiconductor layer formed on the third semiconductor layer; a gate electrode formed on the fourth semiconductor layer; and a source electrode and a drain electrode formed in contact with the second semiconductor layer. The third semiconductor layer and the fourth semiconductor layer are formed in an area immediately below the gate electrode, the fourth semiconductor layer is formed with a p-type semiconductor material, and the second semiconductor layer and the third semiconductor layer are formed with AlGaN, and the third semiconductor layer has a lower composition ratio of Al than that of the second semiconductor layer.Type: GrantFiled: July 17, 2013Date of Patent: March 29, 2016Assignee: Transphorm Japan, Inc.Inventor: Toshihide Kikkawa
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Patent number: 9299844Abstract: There is provided an accumulation-mode MOSFET. The accumulation-mode MOSFET has a tunnel electron emission portion and a thermionic emission portion which are provided in a source region portion.Type: GrantFiled: March 3, 2015Date of Patent: March 29, 2016Assignee: TOHOKU UNIVERSITYInventor: Akinobu Teramoto
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Patent number: 9293574Abstract: A semiconductor device includes: a first nitride semiconductor layer; a second nitride semiconductor layer above the first nitride semiconductor layer and having a band gap larger than that of the first nitride semiconductor layer; a p-type nitride semiconductor layer above the second nitride semiconductor layer; two third nitride semiconductor layers of n-type above the second nitride semiconductor layer and located separately on either side of the p-type nitride semiconductor layer; and a first ohmic electrode above one of the two third nitride semiconductor layers and a second ohmic electrode above the other of the two third nitride semiconductor layers; and a gate electrode above the p-type nitride semiconductor layer. The second nitride semiconductor layer includes, in a region above which neither the p-type nitride semiconductor layer nor the two third nitride semiconductor layers is located, a surface layer including p-type impurities identical to those in the p-type nitride semiconductor layer.Type: GrantFiled: April 16, 2014Date of Patent: March 22, 2016Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Hideyuki Okita, Yasuhiro Uemoto, Masahiro Hikita, Akihiko Nishio, Hidenori Takeda, Takahiro Sato
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Patent number: 9293573Abstract: Provided are a nitride semiconductor device having an excellent boundary between a nitride semiconductor and a gate insulating film, resulting in improved device characteristics, and a manufacturing method therefor.Type: GrantFiled: May 21, 2013Date of Patent: March 22, 2016Assignee: ROHM CO., LTD.Inventors: Minoru Akutsu, Tetsuya Fujiwara
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Patent number: 9293570Abstract: The operation of a HEMT is monitored on an on-chip basis without increasing the power consumption rate. In a semiconductor device 10, an electron supply layer 12 is formed on a channel layer 11. A two-dimensional electron gas (2DEG) layer 13 is formed at the side of the channel layer of the hetero-junction interface. Electrons flow through the 2DEG layer 13 between a source electrode 14 formed on the surface of the electron supply layer 12 and a drain electrode 15 that is formed on the same surface. A potential detection electrode 17 is arranged on the electron supply layer 12 between the gate electrode 16 and the source electrode 14. A resistor 18 having a sufficiently high resistance value makes the electric current flowing to the potential detection electrode 17 negligible relative to the drain current in operation.Type: GrantFiled: September 1, 2011Date of Patent: March 22, 2016Assignee: SANKEN ELECTRIC CO., LTD.Inventors: Akio Iwabuchi, Hironori Aoki
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Patent number: 9293586Abstract: Approaches for enabling uniform epitaxial (epi) growth in an epi junction area of a semiconductor device (e.g., a fin field effect transistor device) are provided. Specifically, a semiconductor device is provided including a dummy gate and a set of fin field effect transistors (FinFETs) formed over a substrate; a spacer layer formed over the dummy gate and each of the set of FinFETs; and an epi material formed within a set of recesses in the substrate, the set of recesses formed prior to removal of an epi block layer over the dummy gate.Type: GrantFiled: July 17, 2013Date of Patent: March 22, 2016Assignee: GLOBALFOUNDRIES INC.Inventors: Zhenyu Hu, Richard J. Carter, Andy Wei, Qi Zhang, Sruthi Muralidharan, Amy L. Child
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Patent number: 9287264Abstract: Embodiments of the present invention provide a method for epitaxially growing a FinFET. One method may include providing a semiconductor substrate including an insulator and an underlayer; forming a channel layer on the semiconductor substrate using epitaxial growth; etching a recess into the channel layer and epitaxially regrowing a portion on the channel layer; etching the channel layer and the underlayer to form fins; forming a gate structure and a set of spacers; etching a source drain region into the channel layer; and forming a source drain material in the source drain region.Type: GrantFiled: December 5, 2014Date of Patent: March 15, 2016Assignee: GLOBALFOUNDRIES Inc.Inventors: Kangguo Cheng, Eric C. T. Harley, Judson R. Holt, Gauri V. Karve, Yue Ke, Derrick Liu, Timothy J. McArdle, Shogo Mochizuki, Alexander Reznicek, Melissa A. Smith
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Patent number: 9281378Abstract: A method includes forming isolation regions extending from a top surface of a semiconductor substrate into the semiconductor substrate, and forming a hard mask strip over the isolation regions and a semiconductor strip. The semiconductor strip is between two neighboring ones of the isolation regions. A dummy gate strip is formed over the hard mask strip. A lengthwise direction of the dummy gate strip is perpendicular to a lengthwise direction of the semiconductor strip, and a portion of the dummy gate strip is aligned to a portion of the semiconductor strip. The method further includes removing the dummy gate strip, removing the hard mask strip, and recessing first portions of the isolation regions that are overlapped by the removed hard mask strip. A portion of the semiconductor strip between and contacting the removed first portions of the isolation regions forms a semiconductor fin.Type: GrantFiled: November 9, 2012Date of Patent: March 8, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kuo-Cheng Ching, Shi Ning Ju, Guan-Lin Chen
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Patent number: 9281341Abstract: Disclosed is a light emitting device including a support substrate, a transistor unit disposed at one side of the upper surface of the support substrate, a light emitting device unit disposed at the other side of the upper surface of the support substrate, and an insulating layer disposed between the transistor unit and the light emitting device unit and between the support substrate and the transistor unit and isolating the transistor unit from the light emitting device unit.Type: GrantFiled: January 25, 2012Date of Patent: March 8, 2016Assignee: LG INNOTEK CO., LTD.Inventor: Hwan Hee Jeong
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Patent number: 9276101Abstract: A low leakage current switch device (110) is provided which includes a GaN-on-Si substrate (11-43) covered by a passivation surface layer (43) in which a T-gate electrode with sidewall extensions (48) is formed and coated with a conformal passivation layer (49) so that the T-gate electrode sidewall extensions are spaced apart from the underlying passivation surface layer (43) by the conformal passivation layer (49).Type: GrantFiled: June 26, 2015Date of Patent: March 1, 2016Assignee: Freescale Semiconductor, Inc.Inventors: Bruce M. Green, Karen E. Moore, Olin Hartin
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Patent number: 9275993Abstract: A semiconductor device includes a first interface film on a first area of a substrate, the first interface film including a first growth interface film and a second growth interface film on a lower portion of the first growth interface film, a first dielectric film on the first interface film, and a first gate electrode on the first dielectric film.Type: GrantFiled: August 7, 2013Date of Patent: March 1, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Weon-Hong Kim, Moon-Kyun Song, Seok-Jun Won
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Patent number: 9276087Abstract: A method of manufacturing a semiconductor device includes patterning a substrate to form an active fin, forming a sacrificial gate pattern crossing over the active fin on the substrate, forming an interlayer insulating layer on the sacrificial gate pattern, removing the sacrificial gate pattern to form a gap region exposing the active fin in the interlayer insulating layer, and oxidizing a portion of the active fin exposed by the gap region to form an insulation pattern between the active fin and the substrate.Type: GrantFiled: April 28, 2014Date of Patent: March 1, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Sungmin Kim, Sung-Dae Suk, Jaehoo Park, Dongho Cha, Daewon Ha
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Patent number: 9276099Abstract: A semiconductor device of one embodiment, including the semiconductor layer including a III-V group nitride semiconductor; a groove portion formed in the semiconductor layer; the gate insulating film formed at least on a bottom surface of the groove portion, the gate insulating film being a stacked film of a first insulating film and a second insulating film of which dielectric constant is higher than that of the first insulating film; the gate electrode formed on the gate insulating film; and a source electrode and a drain electrode formed on the semiconductor layer across the gate electrode, in which the second insulating film is selectively formed only under the gate electrode.Type: GrantFiled: March 9, 2012Date of Patent: March 1, 2016Assignee: Kabushiki Kaisha ToshibaInventors: Miki Yumoto, Masahiko Kuraguchi
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Patent number: 9276098Abstract: According to example embodiments, a high electron mobility transistor (HEMT) includes a first semiconductor layer on a substrate and a second semiconductor layer on the first semiconductor layer. The first and second semiconductor layers define a recessed region. A semiconductor doped layer is in the recessed region of first and second semiconductor layers. A 2-dimensional electron gas (2DEG) region is at a portion of the first semiconductor layer adjacent to both sides of the semiconductor doped layer.Type: GrantFiled: November 4, 2014Date of Patent: March 1, 2016Assignee: Samsung Electronics Co., Ltd.Inventor: Hong-Pyo Heo
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Patent number: 9276100Abstract: A semiconductor device includes a first semiconductor layer disposed over a substrate, a second semiconductor layer disposed over the first semiconductor layer, a gate recess disposed, through removal of a part of or all the second semiconductor layer, in a predetermined region over the first semiconductor layer, an insulating film disposed over the gate recess and the second semiconductor layer, a gate electrode disposed over the gate recess with the insulating film therebetween, and a source electrode and a drain electrode disposed over the first semiconductor layer or the second semiconductor layer, whereby a central portion of the gate recess is higher than a peripheral portion of the gate recess.Type: GrantFiled: November 11, 2011Date of Patent: March 1, 2016Assignee: FUJITSU LIMITEDInventors: Hiroshi Endo, Toshihiro Ohki, Toshihide Kikkawa
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Patent number: 9269782Abstract: A semiconductor device, comprising: a first semiconductor layer disposed on a substrate; a second semiconductor layer disposed on the first semiconductor layer; a lower insulating film disposed on the second semiconductor layer; a p-type electroconductive oxide film disposed on the lower insulating film; an upper insulating film disposed on the oxide film; and a gate electrode disposed on the upper insulating film, wherein the lower insulating film under the gate electrode has a depressed portion.Type: GrantFiled: September 7, 2012Date of Patent: February 23, 2016Assignee: FUJITSU LIMITEDInventors: Masahito Kanamura, Toyoo Miyajima, Toshihiro Ohki
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Patent number: 9263567Abstract: A normally off nitride-based transistor may include a source electrode and a drain electrode, a channel layer serving as a charge transfer path between the source electrode and the drain electrode, and a gate electrode that controls charge transfer of the channel layer. The channel layer may have a junction structure of a first conductive nitride semiconductor layer and an intrinsic nitride semiconductor layer such that a fixed turn-off blocking electric field is generated in the channel layer between the source electrode and the drain electrode in a turn-off state. The intrinsic nitride semiconductor layer may include an intrinsic GaN semiconductor layer, and the first conductive nitride semiconductor layer may include a p type GaN semiconductor layer stacked over the intrinsic GaN semiconductor layer.Type: GrantFiled: May 12, 2014Date of Patent: February 16, 2016Assignee: Seoul Semiconductor Co., Ltd.Inventor: Motonobu Takeya
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Patent number: 9263538Abstract: An ohmic contact to a semiconductor layer including a heterostructure barrier layer and a metal layer adjacent to the heterostructure barrier layer is provided. The heterostructure barrier layer can form a two dimensional free carrier gas for the contact at a heterointerface of the heterostructure barrier layer and the semiconductor layer. The metal layer is configured to form a contact with the two dimensional free carrier gas.Type: GrantFiled: November 15, 2011Date of Patent: February 16, 2016Assignee: Sensor Electronic Technology, Inc.Inventors: Remigijus Gaska, Michael Shur
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Patent number: 9252254Abstract: A semiconductor device includes a substrate; a first nitride semiconductor layer provided over the substrate and having a nitride-polar surface; a gate electrode provided over the first nitride semiconductor layer; and a semiconductor layer provided on the first nitride semiconductor layer and only under the gate electrode, and exhibiting a polarization.Type: GrantFiled: October 19, 2012Date of Patent: February 2, 2016Assignee: FUJITSU LIMITEDInventors: Sanae Shimizu, Atsushi Yamada
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Patent number: 9252257Abstract: A conductive field plate is formed between the drain electrode and gate of each cell of a III-Nitride semiconductor and is connected to the source electrode to reduce the electric field between the gate and the drain. The electrodes may be supported on N+ III-Nitride pad layers and the gate may be a Schottky gate or an insulated gate.Type: GrantFiled: July 16, 2014Date of Patent: February 2, 2016Assignee: Infineon Technologies Americas Corp.Inventor: Michael A. Briere
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Patent number: 9252220Abstract: A nitride semiconductor power device includes an AlGaN multilayer, which has changeable Al composition along a depositing direction, and SixNy layer, so as to minimize an increase in a leakage current and a decrease in a breakdown voltage, which are caused while fabricating a heterojunction type HFET device. A semiconductor device includes a buffer layer, an AlGaN multilayer formed on the buffer layer, a GaN channel layer formed on the AlGaN multilayer, and an AlGaN barrier layer formed on the AlGaN multilayer, wherein aluminum (Al) composition of the AlGaN multilayer changes along a direction that the AlGaN multilayer is deposited.Type: GrantFiled: January 5, 2015Date of Patent: February 2, 2016Assignee: LG Electronics Inc.Inventors: Junho Kim, Seongmoo Cho, Taehoon Jang, Eujin Hwang, Jaemoo Kim
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Patent number: 9252256Abstract: A conductive field plate is formed between the drain electrode and gate of each cell of a III-Nitride semiconductor and is connected to the source electrode to reduce the electric field between the gate and the drain. The electrodes may be supported on N+ III-Nitride pad layers and the gate may be a Schottky gate or an insulated gate.Type: GrantFiled: July 15, 2014Date of Patent: February 2, 2016Assignee: Infineon Technologies Americas Corp.Inventor: Michael A. Briere
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Patent number: 9245742Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.Type: GrantFiled: December 18, 2013Date of Patent: January 26, 2016Assignee: ASM IP HOLDING B.V.Inventors: Suvi P. Haukka, Fu Tang, Michael Givens, Jan Willem Maes, Qi Xie
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Patent number: 9245980Abstract: One illustrative method disclosed herein includes, among other things, performing an epitaxial deposition process to form an epi SiGe layer above a recessed layer of insulating material and on an exposed portion of a fin, wherein the concentration of germanium in the layer of epi silicon-germanium (SixGe1-x) is equal to or greater than a target concentration of germanium for the final fin, performing a thermal anneal process in an inert processing environment to cause germanium in the epi SiGe to diffuse into the fin and thereby define an SiGe region in the fin, after performing the thermal anneal process, performing at least one process operation to remove the epi SiGe and, after removing the epi SiGe, forming a gate structure around at least a portion of the SiGe region.Type: GrantFiled: April 1, 2014Date of Patent: January 26, 2016Assignee: GLOBALFOUNDRIES Inc.Inventors: Murat Kerem Akarvardar, Jody A. Fronheiser, Ajey Poovannummoottil Jacob
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Patent number: 9246112Abstract: Embodiments of the invention include a method of fabrication and a semiconductor structure. The method of fabrication includes depositing a first dielectric material on a substrate, and forming a bottom gate including filling a first opening in the first dielectric layer with a first conductive material. Next, depositing a second dielectric material, and forming a trench in the second dielectric material down to the first conductive material. Next, depositing a second conductive material on the sidewall of the trench forming an electrical connection between the first conductive material and the second conductive material, depositing a third dielectric material in the trench, and removing excess material not in the trench. Next, depositing a gate dielectric layer, and forming a channel layer of carbon nanotubes on the gate dielectric layer. Lastly, depositing a third conductive material on the channel layer forming source and drain terminals.Type: GrantFiled: January 8, 2014Date of Patent: January 26, 2016Assignee: International Business Machines CorporationInventors: Aaron D. Franklin, Shu-Jen Han, Satyavolu S. Papa Rao, Joshua T. Smith
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Patent number: 9240511Abstract: Disclosed is a photodetector including an electrically conductive substrate, a first electrode formed on the substrate, a second electrode disposed to be spaced apart from the first electrode, a plasmonic nanostructure positioned between the first electrode and the second electrode and having surface plasmon resonance, and a resistance measuring device or an electrical conductivity measuring device connected to the first electrode and the second electrode.Type: GrantFiled: December 30, 2013Date of Patent: January 19, 2016Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Seung Yong Lee, Jin Dong Song, So-Hye Cho, Jin Ock Park, Jong-Ku Park
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Patent number: 9236833Abstract: The invention provides an electromagnetic wave generation device. The device includes a substrate provided with a terahertz wave oscillation section including a resonant tunneling diode structure, a two-dimensional electron layer having a semiconductor heterojunction structure, and a transistor section including a source electrode and a drain electrode provided at end portions of the two-dimensional electron layer and a gate electrode provided above the two-dimensional electron layer. The terahertz wave output of the terahertz wave oscillation section changes distribution of electrons in the two-dimensional electron layer.Type: GrantFiled: January 14, 2014Date of Patent: January 12, 2016Assignee: Canon Kabushiki KaishaInventors: Toshihiko Ouchi, Ryota Sekiguchi
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Patent number: 9230651Abstract: A semiconductor memory cell includes a floating body region configured to be charged to a level indicative of a state of the memory cell selected from at least first and second states. A first region of the memory cell is in electrical contact with the floating body region. A second region of the memory cell is spaced apart from the first region and is also in electrical contact with the floating body region. A gate is positioned between the first and second regions. A back-bias region is configured to generate impact ionization when the memory cell is in one of the first and second states, and the back-bias region is configured so as not to generate impact ionization when the memory cell is in the other of the first and second states.Type: GrantFiled: January 22, 2013Date of Patent: January 5, 2016Assignee: Zeno Semiconductor, INC.Inventors: Yuniarto Widjaja, Jin-Woo Han, Benjamin S. Louie
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Patent number: 9231096Abstract: A field effect transistor includes a substrate and a semiconductor layer provided on the substrate, wherein the semiconductor layer includes a lower barrier layer provided on the substrate, Ga-face grown, lattice relaxed, and having a composition In1?zAlzN (0?z?1), a channel layer having a composition of: AlxGa1?xN (0?x?1) or InyGa1?yN (0?y?1). Or GaN provided on and lattice-matched to the lower barrier layer, a source electrode and a drain electrode having ohmic contact to an upper part of the semiconductor layers, disposed spaced to each other, and a gate electrode arranged via a gate insulating film in a region lying between the source electrode and the drain electrode.Type: GrantFiled: November 21, 2014Date of Patent: January 5, 2016Assignee: Renesas Electronics CorporationInventors: Yasuhiro Okamoto, Yuji Ando, Tatsuo Nakayama, Takashi Inoue, Kazuki Ota
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Patent number: 9231093Abstract: A high electron mobility transistor (HEMT) according to example embodiments includes a channel layer, a channel supply layer on the channel layer, a source electrode and a drain electrode on at least one of the channel layer and the channel supply layer, a gate electrode between the source electrode and the drain electrode, and a Schottky electrode forming a Schottky contact with the channel supply layer. An upper surface of the channel supply layer may define a Schottky electrode accommodation unit. At least part of the Schottky electrode may be in the Schottky electrode accommodation unit. The Schottky electrode is electrically connected to the source electrode.Type: GrantFiled: March 14, 2013Date of Patent: January 5, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Woo-chul Jeon, Kyoung-yeon Kim, Jong-seob Kim, Joon-yong Kim, Ki-yeol Park, Young-hwan Park, Jai-kwang Shin, Jae-joon Oh, Hyuk-soon Choi, Jong-bong Ha, Sun-kyu Hwang, In-jun Hwang
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Patent number: 9231075Abstract: A semiconductor device includes a nitride semiconductor stacked structure including a carrier transit layer and a carrier supply layer; a p-type nitride semiconductor layer provided over the nitride semiconductor stacked structure and including an active region and an inactive region; an n-type nitride semiconductor layer provided on the inactive region in the p-type nitride semiconductor layer; and a gate electrode provided over the active region in the p-type nitride semiconductor layer.Type: GrantFiled: March 11, 2015Date of Patent: January 5, 2016Assignee: Transphorm Japan, Inc.Inventor: Atsushi Yamada
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Patent number: 9231064Abstract: A semiconductor structure having: a Group III-N channel layer, a Group III-N top-barrier polarization-generating layer forming a heterojunction with an upper surface of the channel layer; and a Group III-N back-barrier polarization-generating layer forming a heterojunction with a lower surface of the channel layer. The channel layer has disposed therein a predetermined n-type conductive dopant.Type: GrantFiled: August 12, 2014Date of Patent: January 5, 2016Assignee: Raytheon CompanyInventors: Shahed Reza, Eduardo M. Chumbes, Thomas E. Kazior, Gerhard Sollner
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Patent number: 9230803Abstract: Disclosed are methods of growing III-V epitaxial layers on a substrate, semiconductor structures thus obtained, and devices comprising such semiconductor structures. An example semiconductor substrate includes a substrate and a buffer layer on top of the substrate, where a conductive path is present between the substrate and buffer layer. A conductive path may be present in the conductive interface, and the conductive path may be interrupted by one or more local electrical isolations. The local electrical isolation(s) may be positioned with the device such that at least one of the local electrical isolation(s) is located between a high voltage terminal and a low voltage terminal of the device.Type: GrantFiled: July 6, 2012Date of Patent: January 5, 2016Assignee: Epigan NVInventors: Joff Derluyn, Stefan Degroote, Marianne Germain
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Patent number: 9224846Abstract: This specification relates to an enhancement-type semiconductor device having a passivation layer formed using a photoelectrochemical (PEC) method, and a fabricating method thereof. To this end, a semiconductor device according to one exemplary embodiment includes a GaN layer, an AlGaN layer formed on the GaN layer, a p-GaN layer formed on the AlGaN layer, a gate electrode formed on the p-GaN layer, a source electrode and a drain electrode formed on a partial region of the AlGaN layer, and a passivation layer formed on a partial region of the AlGaN layer, the passivation layer formed between the source electrode and the gate electrode or between the gate electrode and the drain electrode, wherein the passivation layer is formed in a manner of oxidizing a part of the p-GaN layer.Type: GrantFiled: April 14, 2014Date of Patent: December 29, 2015Assignee: LG Electronics Inc.Inventors: Jonghoon Shin, Woongsun Kim, Taehoon Jang
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Patent number: 9214513Abstract: According to an exemplary embodiment, a method of forming a fin structure is provided. The method includes the following operations: etching a first dielectric layer to form at least one recess and a first core portion of a fin core; form an oxide layer as a shallow trench isolation layer in the recess; etching back the oxide layer to expose a portion of the fin core; and forming a fin shell to cover a sidewall of the exposed portion of the fin core.Type: GrantFiled: February 13, 2014Date of Patent: December 15, 2015Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Chun-Hsiung Lin, Carlos H. Diaz, Hui-Cheng Chang, Syun-Ming Jang, Mao-Lin Huang, Chien-Hsun Wang
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Patent number: 9214555Abstract: Integrated circuit devices having FinFETs with channel regions low in crystal defects and current-blocking layers underneath the channels to improve electrostatic control. Optionally, an interface control layer formed of a high bandgap semiconductor is provided between the current-blocking layer and the channel. The disclosure also provides methods of forming integrated circuit devices having these structures. The methods include forming a FinFET fin including a channel by epitaxial growth, then oxidizing a portion of the fin to form a current-blocking layer.Type: GrantFiled: March 12, 2013Date of Patent: December 15, 2015Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Richard Kenneth Oxland, Mark van Dal, Martin Christopher Holland, Georgios Vellianitis, Matthias Passlack
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Patent number: 9214538Abstract: A novel semiconductor power transistor is presented. The semiconductor structure is simple and is based on a FET structure, where multiple channels and multiple gate regions are formed in order to achieve a lower specific on-resistance, and a higher control on the transport properties of the device. No dielectric layer is present between gate electrodes and device channels, decreasing the parasitic capacitance associated with the gate terminal. The fabrication of the device does not require Silicon On Insulator techniques and it is not limited to Silicon semiconductor materials. It can be fabricated as an enhancement or depletion device with much more control on the threshold voltage of the device, and with superior RF performance.Type: GrantFiled: May 16, 2011Date of Patent: December 15, 2015Assignee: ETA Semiconductor Inc.Inventors: Fabio Alessio Marino, Paolo Menegoli
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Patent number: 9196685Abstract: A semiconductor device includes a first superlattice buffer layer formed on a substrate. A second superlattice buffer layer is formed on the first superlattice buffer layer. A first semiconductor layer is formed by a nitride semiconductor on the second superlattice buffer layer. A second semiconductor layer is formed by a nitride semiconductor on the first semiconductor layer. The first superlattice buffer layer is formed by alternately and cyclically laminating a first superlattice formation layer and a second superlattice formation layer. The second superlattice buffer layer is formed by alternately and cyclically laminating the first superlattice formation layer and the second superlattice formation layer. The first superlattice formation layer is formed by AlxGa1-xN, and the second superlattice formation layer is formed by AyGa1-yN, where x>y. A concentration of an impurity element doped into the second superlattice buffer layer is higher than that doped into the first superlattice buffer layer.Type: GrantFiled: July 7, 2014Date of Patent: November 24, 2015Assignee: FUJITSU LIMITEDInventors: Shuichi Tomabechi, Junji Kotani
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Patent number: 9184275Abstract: Transistor devices which include semiconductor layers with integrated hole collector regions are described. The hole collector regions are configured to collect holes generated in the transistor device during operation and transport them away from the active regions of the device. The hole collector regions can be electrically connected or coupled to the source, the drain, or a field plate of the device. The hole collector regions can be doped, for example p-type or nominally p-type, and can be capable of conducting holes but not electrons.Type: GrantFiled: June 27, 2012Date of Patent: November 10, 2015Assignee: Transphorm Inc.Inventors: Umesh Mishra, Srabanti Chowdhury, Ilan Ben-Yaacov
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Patent number: 9178022Abstract: The present invention provides a precursor composition for forming a conductive oxide film having high conductivity and a stable amorphous structure maintained even after heated at high temperature by a simple liquid phase process. The precursor composition of the present invention contains at least one selected from the group consisting of carboxylates, nitrates and sulfates of lanthanoids (but, except for cerium); at least one selected from the group consisting of carboxylates, nitrosyl carboxylates, nitrosyl nitrates and nitrosyl sulfates of ruthenium, iridium or rhodium; and a solvent containing at least one selected from the group consisting of carboxylic acids, alcohols and ketones.Type: GrantFiled: July 8, 2011Date of Patent: November 3, 2015Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCYInventors: Tatsuya Shimoda, Jinwang Li
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Patent number: 9171935Abstract: A FinFET semiconductor device fabrication process includes forming a plurality of FinFET fins upon a semiconductor substrate, forming a first dielectric layer upon the semiconductor substrate so that an upper surface of the first dielectric layer is coplanar with upper surfaces of the FinFET fins, forming a plurality of dummy gates upon the FinFET fins and the first dielectric layer orthogonal to the FinFET fins, revealing the FinFET fins by removing first portions of the first dielectric layer from source-drain regions, removing the dummy gates, and subsequent to the removal of the dummy gates, revealing the FinFET fins by removing second portions of the first dielectric layer from channel regions.Type: GrantFiled: March 7, 2014Date of Patent: October 27, 2015Assignee: GlobalFoundries Inc.Inventors: Seong-Dong Kim, Myung-Hee Na, Jin Z. Wallner, Thomas A. Wallner, Qintao Zhang
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Patent number: 9166031Abstract: A semiconductor device includes a superlattice buffer layer formed on a substrate. A first semiconductor layer is formed by a nitride semiconductor on the superlattice buffer layer. A second semiconductor layer is formed by a nitride semiconductor on the first semiconductor layer. A gate electrode, a source electrode and a drain electrode are formed on the second semiconductor layer. The superlattice buffer layer is formed by alternately and periodically laminating a first superlattice formation layer and a second superlattice formation layer. The first superlattice formation layer is formed by AlxGa1-xN and the second superlattice formation layer is formed by AlyGa1-yN, where a relationship x>y is satisfied. A concentration of an impurity element serving as an acceptor doped into a portion or a whole of the second superlattice formation layer is higher than a concentration of the impurity element serving as an acceptor doped into the first superlattice formation layer.Type: GrantFiled: July 3, 2014Date of Patent: October 20, 2015Assignee: FUJITSU LIMITEDInventors: Junji Kotani, Norikazu Nakamura
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Patent number: 9165851Abstract: A semiconductor device includes a compound semiconductor multilayer structure, a fluorine-containing barrier film that covers a surface of the compound semiconductor multilayer structure, and a gate electrode that is arranged over the compound semiconductor multilayer structure with the fluorine-containing barrier film placed the gate and the compound semiconductor multilayer structure.Type: GrantFiled: August 29, 2012Date of Patent: October 20, 2015Assignee: FUJITSU LIMITEDInventors: Shirou Ozaki, Masayuki Takeda
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Patent number: 9153682Abstract: A semiconductor device protects against concentration of electric current at a front end portion of one of the electrodes thereof. The semiconductor device includes a substrate, a compound semiconductor layer formed on the substrate and having a channel layer based on a hetero junction, a first main electrode formed on the compound semiconductor layer, a second main electrode formed on the compound semiconductor surrounding the first main electrode and having a linear region and an arc-shaped region, a control electrode formed on the compound semiconductor layer and disposed opposite to the first main electrode and the second main electrode, an electric current being made to flow between the first main electrode and the second main electrode, and an electric current limiting section formed between the first main electrode and the arc-shaped region of the second main electrode.Type: GrantFiled: August 8, 2013Date of Patent: October 6, 2015Assignee: SANKEN ELECTRIC CO., LTD.Inventors: Akio Iwabuchi, Hironori Aoki
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Patent number: 9147594Abstract: A field effect transistor including a substrate which includes, a fin structure, the fin structure having a top surface. The field effect transistor further including an isolation in the substrate and a source/drain (S/D) recess cavity below the top surface of the substrate disposed between the fin structure and the isolation structure. The S/D recess cavity includes a lower portion, the lower portion further includes a first strained layer, a first dielectric film and a second dielectric film, wherein the first strained layer is disposed between the first dielectric film and the second dielectric film. The S/D recess cavity further includes an upper portion including a second strained layer overlying the first strained layer, wherein a ratio of a height of the upper portion to a height of the lower portion ranges from about 0.8 to about 1.2.Type: GrantFiled: June 5, 2013Date of Patent: September 29, 2015Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Tsung-Lin Lee, Chih-Hao Chang, Chih-Hsin Ko, Feng Yuan, Jeff J. Xu
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Patent number: 9148092Abstract: A method of fabricating amplifiers, includes monolithically integrating a field-plate transistor and T-gate transistor on a single wafer. A device includes a monolithically integrated field-plate transistor and T-gate transistor on a single wafer.Type: GrantFiled: August 20, 2013Date of Patent: September 29, 2015Assignee: HRL Laboratories, LLCInventors: David F. Brown, Miroslav Micovic
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Patent number: 9147761Abstract: The compound semiconductor device comprises an i-GaN buffer layer 12 formed on an SiC substrate 10; an n-AlGaN electron supplying layer 16 formed on the i-GaN buffer layer 12; an n-GaN cap layer 18 formed on the n-AlGaN electron supplying layer 16; a source electrode 20 and a drain electrode 22 formed on the n-GaN cap layer 18; a gate electrode 26 formed on the n-GaN cap layer 18 between the source electrode 20 and the drain electrode 22; a first protection layer formed on the n-GaN cap layer 18 between the source electrode 20 and the drain electrode 22; and a second protection layer 30 buried in an opening 28 formed in the first protection layer 24 between the gate electrode 26 and the drain electrode 22 down to the n-GaN cap layer 18 and formed of an insulation film different from the first protection layer.Type: GrantFiled: August 15, 2014Date of Patent: September 29, 2015Assignee: FUJITSU LIMITEDInventor: Toshihide Kikkawa