Light Responsive Structure Patents (Class 257/21)
  • Patent number: 11404591
    Abstract: An infrared detector and a method for forming it are provided. The detector includes absorber, barrier, and contact regions. The absorber region includes a first semiconductor material, with a first lattice constant, that produces charge carriers in response to infrared light. The barrier region is disposed on the absorber region and comprises a superlatice that includes (i) first barrier region layers comprising the first semiconductor material, and (ii) second barrier region layers comprising a second semiconductor material, different from, but lattice matched to, the first semiconductor material. The first and second barrier region layers are alternatingly arranged. The contact region is disposed on the barrier region and comprises a superlattice that includes (i) first contact region layers comprising the first semiconductor material, and (ii) second contact region layers comprising the second semiconductor material layer. The first and second contact region layers are alternatingly arranged.
    Type: Grant
    Filed: July 29, 2019
    Date of Patent: August 2, 2022
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Edward H. Aifer, Jerry R. Meyer, Chadwick Lawrence Canedy, Igor Vurgaftman, Jill A. Nolde
  • Patent number: 11333812
    Abstract: A colored structure representing a back side-reflection color with metallic luster and high chroma when observed in a substrate incident mode greatly enhances light absorbance at a specific wavelength using a resonance structure in which a light absorbing material is inserted between a transparent substrate and an upper mirror layer. The colored structure controls metallic luster and texture of a high-chroma color from gloss-semi-gloss-matte texture in various aesthetic ways including introducing a haze surface structure in which light scattering occurs on at least one surface of the transparent substrate.
    Type: Grant
    Filed: July 12, 2019
    Date of Patent: May 17, 2022
    Assignee: Korea Institute of Science and Technology
    Inventors: Kyeong Seok Lee, Doh Kwon Lee, Jeung Hyun Jeong, Won Mok Kim
  • Patent number: 11322630
    Abstract: An optoelectronic device includes a semiconductor substrate and a first stack of epitaxial layers, which are disposed over the semiconductor substrate and are configured to function as a photodetector, which emits a photocurrent in response to infrared radiation in a range of wavelengths greater than 940 nm. A second stack of epitaxial layers is disposed over the first stack and configured to function as an optical transmitter with an emission wavelength in the range of wavelengths greater than 940 nm.
    Type: Grant
    Filed: September 3, 2020
    Date of Patent: May 3, 2022
    Assignee: APPLE INC.
    Inventors: Weiping Li, Arnaud Laflaquière, Chinhan Lin, Fei Tan, Tong Chen, Xiaolong Fang
  • Patent number: 11302740
    Abstract: Provided is an opto-electronic device having low dark noise and a high signal-to-noise ratio. The opto-electronic device may include: a first semiconductor layer doped to have a first conductivity type; a second semiconductor layer disposed on an upper surface of the first semiconductor layer and doped to have a second conductivity type electrically opposite to the first conductivity type; a transparent matrix layer disposed on an upper surface of the second semiconductor layer; a plurality of quantum dots arranged to be in contact with the transparent matrix layer; and a first electrode provided on a first side of the transparent matrix layer and a second electrode provided on a second side of the transparent matrix layer opposite to the first side, wherein the first electrode and the second electrode are electrically connected to the second semiconductor layer.
    Type: Grant
    Filed: July 16, 2020
    Date of Patent: April 12, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kyungsang Cho, Chanwook Baik, Hojung Kim
  • Patent number: 11296251
    Abstract: An electromagnetic wave detector includes: an insulating film having a first surface and a second surface facing the first surface; a first layer to perform photoelectric conversion by an incident electromagnetic wave and change in potential, the first layer being made of a first two-dimensional atomic layer material; and a second layer to receive the change in potential through the first insulating film and generate change in electrical quantity, the second layer being made of a second two-dimensional atomic layer material and provided on the first surface. In this manner, the sensitive electromagnetic wave detector detecting an incident electromagnetic wave as change in electrical quantity and having high response speed to an incident electromagnetic wave can be provided.
    Type: Grant
    Filed: August 28, 2018
    Date of Patent: April 5, 2022
    Assignee: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Shimpei Ogawa, Masaaki Shimatani, Shoichiro Fukushima
  • Patent number: 11276793
    Abstract: A semiconductor device is provided. The semiconductor device includes a substrate having a photoelectric conversion element, a first light-shielding layer disposed on the substrate and having a first aperture, a light-transmitting layer disposed on the first light-shielding layer, at least one second light-shielding layer disposed in the light-transmitting layer and having a second aperture, and a light-condensing structure disposed on the light-transmitting layer. The orthogonal projection of the second aperture on the bottom surface of the substrate has a long axis of symmetry and a short axis of symmetry perpendicular to the long axis of symmetry.
    Type: Grant
    Filed: June 4, 2020
    Date of Patent: March 15, 2022
    Assignee: VISERA TECHNOLOGIES COMPANY LIMITED
    Inventor: Wei-Ko Wang
  • Patent number: 11217760
    Abstract: Techniques for growing, at least one of: (a) quantum dots and (b) nano-crystals, on a surface of a material are provided. One method comprises placing a precursor on the surface; adding an antisolvent to the precursor; and growing at least one of the quantum dots and the nanocrystals on the surface.
    Type: Grant
    Filed: June 15, 2020
    Date of Patent: January 4, 2022
    Assignee: University of Central Florida Research Foundation, Inc.
    Inventors: Jayan Thomas, Basudev Pradhan, Farzana Chowdhury
  • Patent number: 11211514
    Abstract: Semiconductor optoelectronic devices having a dilute nitride active region are disclosed. In particular, the semiconductor devices have a dilute nitride active region with at least two bandgaps within a range from 0.7 eV and 1.4 eV. Photodetectors comprising a dilute nitride active region with at least two bandgaps have a reduced dark current when compared to photodetectors comprising a dilute nitride active region with a single bandgap equivalent to the smallest bandgap of the at least two bandgaps.
    Type: Grant
    Filed: March 5, 2020
    Date of Patent: December 28, 2021
    Assignee: ARRAY PHOTONICS, INC.
    Inventors: Ferran Suarez, Ding Ding, Aymeric Maros
  • Patent number: 11201256
    Abstract: Provided are an infrared detecting device and an infrared detecting system including the infrared detecting device. The infrared detecting device includes at least one infrared detector, and the at least one infrared detector includes a substrate, a buffer layer, and at least one light absorbing portion. The buffer layer includes a superlattice structure.
    Type: Grant
    Filed: July 1, 2020
    Date of Patent: December 14, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Changyoung Park, Sanghun Lee
  • Patent number: 11177411
    Abstract: A photosensitive field-effect transistor comprising a substrate with a source electrode, a drain electrode and a gate electrode. The transistor comprises a photoactive layer which at least partly covers the gate electrode, and a channel layer which covers the photoactive layer and at least partly covers both the source electrode and the drain electrode. The channel layer comprises a two-dimensional material whose conductivity is modulated by charge carriers transferred from the photoactive layer when electromagnetic radiation is absorbed in the photoactive layer.
    Type: Grant
    Filed: October 23, 2018
    Date of Patent: November 16, 2021
    Assignee: EMBERION OY
    Inventors: Sami Kallioinen, Martti Voutilainen
  • Patent number: 11169192
    Abstract: In various embodiments, a graphical plotter can create a transformation circle. An identification component can identify a center point, a radius from the center point, and a circular outer point set extended from the center point by the radius. A creation component can create a plot based, at least in part, on the center point, the radius, and the circular outer point set. An output component can cause the plot to be outputted, where the circular outer point set is dependent on trigonometry of an angle set from an x-axis pertaining to the center point and the radius.
    Type: Grant
    Filed: April 22, 2019
    Date of Patent: November 9, 2021
    Assignee: The Government of the United States, as represented by the Secretary of the Army
    Inventor: Brandon Underwood
  • Patent number: 11121271
    Abstract: Lateral and vertical microstructure enhanced photodetectors and avalanche photodetectors are monolithically integrated with CMOS/BiCMOS ASICs and can also be integrated with laser devices using fluidic assembly techniques. Photodetectors can be configured in a vertical PIN arrangement or lateral metal-semiconductor-metal arrangement where electrodes are in an inter-digitated pattern. Microstructures, such as holes and protrusions, can improve quantum efficiency in silicon, germanium and III-V materials and can also reduce avalanche voltages for avalanche photodiodes. Applications include optical communications within and between datacenters, telecommunications, LIDAR, and free space data communication.
    Type: Grant
    Filed: August 1, 2019
    Date of Patent: September 14, 2021
    Assignee: W&WSens, Devices, Inc.
    Inventors: Shih-Yuan Wang, Shih-Ping Wang
  • Patent number: 11112316
    Abstract: An optical fiber temperature sensor includes a broadband light source, a first optical fiber patch cord, a first single-mode optical fiber, a single-hole twin-core eccentric core optical fiber, a second single-mode optical fiber, a second optical fiber patch cord, and an optical spectrum analyzer.
    Type: Grant
    Filed: February 11, 2018
    Date of Patent: September 7, 2021
    Assignee: Huazhong University of Science and Technology
    Inventors: Ping Lu, Wenjun Ni, Deming Liu, Xin Fu, Hao Liao
  • Patent number: 11039094
    Abstract: The present technology relates to a light receiving element, an imaging element, and an imaging device. A light receiving element includes an on-chip lens, a wiring layer, and a semiconductor layer arranged between the on-chip lens and the wiring layer. The semiconductor layer includes a first voltage application unit to which a first voltage is applied, a second voltage application unit to which a second voltage is applied, a first charge detection unit, and a second charge detection unit. The wiring layer includes at least one layer including first voltage application wiring configured to supply the first voltage, second voltage application wiring configured to supply the second voltage, and a reflection member that overlaps the first charge detection unit or the second charge detection unit, in plan view. The present technology, for example, can be applied to a light receiving element configured to measure a distance.
    Type: Grant
    Filed: January 5, 2018
    Date of Patent: June 15, 2021
    Assignee: Sony Semiconductor Solutions Corporation
    Inventor: Takuya Sano
  • Patent number: 11005007
    Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprising: a light-emitting stack; and a semiconductor layer having a first surface connecting to the light-emitting stack, a second surface opposite to the first surface, and a void; wherein the void comprises a bottom part near the first surface and an opening on the second surface, and a dimension of the bottom part is larger than the dimension of the opening.
    Type: Grant
    Filed: September 12, 2019
    Date of Patent: May 11, 2021
    Assignee: EPISTAR CORPORATION
    Inventors: Wen-Luh Liao, Chih-Chiang Lu, Shih-Chang Lee, Hung-Ta Cheng, Hsin-Chan Chung, Yi-Chieh Lin
  • Patent number: 10978606
    Abstract: The present disclosure relates to an avalanche diode including at least one PN junction; at least one depletion structure located adjacent to the PN junction and configured to form a depletion region; and at least two electrodes to polarize the at least one PN junction.
    Type: Grant
    Filed: October 11, 2018
    Date of Patent: April 13, 2021
    Assignee: STMicroelectronics (Research & Development) Limited
    Inventor: Laurence Stark
  • Patent number: 10944065
    Abstract: Disclosed is a plurality of metal chalcogenide nanocrystals coated with multiple organic and inorganic ligands; wherein the metal is selected from Hg, Pb, Sn, Cd, Bi, Sb or a mixture thereof; and the chalcogen is selected from S, Se, Te or a mixture thereof; wherein the multiple inorganic ligands includes at least one inorganic ligands are selected from S2?, HS?, Se2?, Te2?, OH?, BF4?, PF6?, Cl?, Br?, I?, As2Se3, Sb2S3, Sb2Te3, Sb2Se3, As2S3 or a mixture thereof; and wherein the absorption of the C—H bonds of the organic ligands relative to the absorption of metal chalcogenide nanocrystals is lower than 50%, preferably lower than 20%.
    Type: Grant
    Filed: July 28, 2016
    Date of Patent: March 9, 2021
    Assignee: NEXDOT
    Inventor: Emmanuel Lhuillier
  • Patent number: 10937888
    Abstract: A method for making a semiconductor device may include forming a hyper-abrupt junction region above a substrate and including a first semiconductor layer having a first conductivity type, a first superlattice layer on the first semiconductor layer, a second semiconductor layer on the first superlattice layer and having a second conductivity type different than the first conductivity type, and a second superlattice layer on the second semiconductor layer. The method may further include forming a first contact coupled to the hyper-abrupt junction region and a second contact coupled to the substrate to define a varactor. The first and second superlattices may each include stacked groups of layers, with each group of layers comprising stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.
    Type: Grant
    Filed: July 17, 2019
    Date of Patent: March 2, 2021
    Assignee: ATOMERA INCORPORATED
    Inventors: Richard Burton, Marek Hytha, Robert J. Mears
  • Patent number: 10908438
    Abstract: An electroabsorption modulator that operates based on electroabsorption of a surface plasmon polariton mode is improved by various structural changes and/or selection of different materials. For example, at least a portion of the waveguide may be made to be conductive, e.g., by doping. Also, layers that make up the modulator structure may be placed along sides of waveguides in addition to or instead of simply on the top thereof. High permittivity gate dielectric materials may be employed. Also, materials other than ITO may be employed as a transparent conductor. Such an improved plasmonic electroabsorption modulator can be fabricated using standard semiconductor processing techniques and may be integrated with standard photonic integrated circuits, including silicon photonics and compound semiconductor-based platforms. Advantageously, high-speed, low-voltage operation over a wide spectrum of wavelengths may be achieved.
    Type: Grant
    Filed: March 1, 2018
    Date of Patent: February 2, 2021
    Assignee: National Technology & Engineering Solutions of Sandia, LLC
    Inventors: Michael Wood, Salvatore Campione, Gordon Arthur Keeler, Kent M. Geib, Joshua Shank, Jon Ihlefeld, Darwin K. Serkland, Ting S. Luk
  • Patent number: 10910415
    Abstract: The present disclosure discloses a three-dimensional photodetector and a method of manufacturing the same. The three-dimensional photodetector according to an embodiment of the present disclosure includes a base part formed in the center region of the three-dimensional photodetector; a first bending part formed around the base part; at least one branch part connected to the base part through the first bending part; second bending parts formed on the at least one branch part; bonding parts connected to the at least one branch part through the second bending parts; at least one photoresistor formed on the surface of at least one of the base part and the branch parts; and a stretchable substrate to which the bonding parts are attached, wherein the bonding parts are attached to the stretchable substrate so that the base part has a gap in the thickness direction of the stretchable substrate; and the at least one photoresistor is responsible for tracking the traveling direction of light.
    Type: Grant
    Filed: December 28, 2018
    Date of Patent: February 2, 2021
    Assignee: INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
    Inventors: Jong Hyun Ahn, Won Ho Lee, Yong Jun Lee
  • Patent number: 10911706
    Abstract: Shading correction is realized without sacrificing a noise characteristic and a sensitivity characteristic. A solid-state imaging element includes a plurality of pixels that are arranged two-dimensionally and each outputs analog voltage proportional to electron produced by photodiode and an AD conversion section that convert analog voltages output from the pixels into digital signals. First and second pixels included in the plurality of pixels differ in conversion efficiency with which a unit quantity of electrons output from the photodiodes are converted into the analog voltages.
    Type: Grant
    Filed: July 6, 2017
    Date of Patent: February 2, 2021
    Assignee: SONY CORPORATION
    Inventor: Shunsuke Ishii
  • Patent number: 10903384
    Abstract: A multi-color light detector includes a first photodiode. The light detector further includes a second photodiode stacked on the first photodiode and defining a via. The light detector further includes a first conductor extending through the via, contacting the first photodiode, and designed to transmit a first signal corresponding to a first light detected by the first photodiode. The light detector further includes a second conductor contacting the second photodiode and designed to transmit a second signal corresponding to a second light detected by the second photodiode.
    Type: Grant
    Filed: June 4, 2019
    Date of Patent: January 26, 2021
    Assignee: TELEDYNE SCIENTIFIC & IMAGING, LLC
    Inventors: Eric Piquette, Michael Carmody, Peter Dreiske
  • Patent number: 10892294
    Abstract: The invention relates to a radiation detector element (10) comprising a stack (15) of layers superimposed in a stacking direction (Z), the stack (15) having a first face (25) and a second face (30) and comprising a radiation-absorbing layer (35) consisting of a first semiconductor material (M1) having a first band gap value and at least one barrier layer (40) consisting of a second semiconductor material (M2) having a second band gap value, the second band gap value being strictly higher than the first band gap value. The second face (30) has at least one strip (105) defined in the stacking direction (Z) by the barrier layer (40), the strip (105) consisting of the second semiconductor material (M2) and having a doping of the first type and a free carrier density higher than or equal to 1.1017 cm?3.
    Type: Grant
    Filed: December 16, 2016
    Date of Patent: January 12, 2021
    Assignees: THALES, COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES
    Inventors: Florian Legoff, Jean-Luc Reverchon, Christophe Kazmierski, Jean Decobert
  • Patent number: 10868120
    Abstract: A method for making a semiconductor device may include forming a hyper-abrupt junction region on a substrate. The hyper-abrupt junction region may include a first semiconductor layer having a first conductivity type, a superlattice layer on the first semiconductor layer, and a second semiconductor layer on the superlattice layer and having a second conductivity type different than the first conductivity type. The superlattice may include stacked groups of layers, with each group of layers including stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The method may further include forming a first contact coupled to the hyper-abrupt junction regions, and forming a second contact coupled to the substrate to define a varactor.
    Type: Grant
    Filed: July 17, 2019
    Date of Patent: December 15, 2020
    Assignee: ATOMERA INCORPORATED
    Inventors: Richard Burton, Marek Hytha, Robert J. Mears
  • Patent number: 10861997
    Abstract: A semiconductor substrate doped with a first doping type is positioned adjacent an insulated gate electrode that is biased by a gate voltage. A first region within the semiconductor substrate is doped with the first doping type and biased with a bias voltage. A second region within the semiconductor substrate is doped with a second doping type that is opposite the first doping type. Voltage application produces an electrostatic field within the semiconductor substrate causing the formation of a fully depleted region within the semiconductor substrate. The fully depleted region responds to absorption of a photon with an avalanche multiplication that produces charges that are collected at the first and second regions.
    Type: Grant
    Filed: December 17, 2018
    Date of Patent: December 8, 2020
    Assignee: STMicroelectronics (Crolles 2) SAS
    Inventor: Francois Roy
  • Patent number: 10824048
    Abstract: A electronic method, includes receiving, by a graphene structure, a microwave signal. The microwave signal has a driving voltage level. The electronic method includes generating, by the graphene structure, optical photons based on the microvolts. The electronic method includes outputting, by the graphene structure, the optical photons.
    Type: Grant
    Filed: April 2, 2019
    Date of Patent: November 3, 2020
    Assignee: Abu Dhabi University
    Inventors: Montasir Yousof Abdallah Qasymeh, Hichem El Euch
  • Patent number: 10777696
    Abstract: A ternary superlattice structure includes a substrate and periodic layer structure on the substrate and having alternating infrared absorbing semiconductor materials having a first layer of InAs[1-x]Sb[x] ternary alloy material, and a second layer of In[1-y]Z[y]As ternary alloy material, wherein Z is Ga or Al, wherein x is in a range of greater than zero and less than one, wherein y is in a range of greater than zero and less than one, and wherein a thickness of each of the first and second layers are substantially similar and configured to absorb light in a predetermined spectral band and prevent trapping of carriers in any particular layer. In examples, y is in a range from about 0.05 to about 0.35, and x is in a range of about 0.2 to about 0.8.
    Type: Grant
    Filed: July 23, 2019
    Date of Patent: September 15, 2020
    Assignee: United States of America as represented by the Secretary of the Air Force
    Inventors: Gamini Ariyawansa, Charles J. Reyner, John E. Scheihing, Joshua M. Duran
  • Patent number: 10677649
    Abstract: The present invention relates to an optoelectronic apparatus comprising: —an optoelectronic device comprising: —a transport structure (T) comprising a 2-dimensional layer; —a photosensitizing structure (P) configured and arranged to absorb incident light and induce changes in the electrical conductivity of the transport structure (T); and —drain (D) and source (S) electrodes electrically connected to respective separate locations of the transport structure (T); —noise suppression means comprising a modulation unit including: —a control unit to generate and apply on the drain (D) or source (S) electrodes a voltage oscillating signal having a component with a frequency of ?m/2?; and —a signal extraction unit to extract a required electric signal, from an output signal, with no components below ?m/2?. The present invention also concerns to a method for suppressing noise for an optoelectronic apparatus according to the invention, and to the use of the apparatus as a light detector or as an image sensor.
    Type: Grant
    Filed: July 11, 2018
    Date of Patent: June 9, 2020
    Assignees: FUNDACIÓ INSTITUT DE CIÈNCIES FOTÒNIQUES, INSTITUCIÓ CATALANA DE RECERCA I ESTUDIS AVANÇATS
    Inventors: Frank Koppens, Stijn Goossens, Gerasimos Konstantatos
  • Patent number: 10665632
    Abstract: The invention relates to a method for manufacturing a photodetector able to operate for the photodetection of infrared electromagnetic waves, comprising a stack of thin layers placed on top of one another. The method includes obtaining a first assembly (E1) of stacked layers, forming a detection assembly, comprising a first substrate layer, a photoabsorbent layer, a barrier layer and at least one contact layer, and a second assembly (E2) of stacked layers forming a reading circuit, comprising at least one second substrate layer and a multiplexing layer. The first and second assemblies are glued between the contact layer of the first assembly and the multiplexing layer of the second assembly. Etching through the second assembly makes it possible to obtain a plurality of interconnect vias, then p or n doping of zones of the first contact layer of the first assembly through the interconnect vias.
    Type: Grant
    Filed: July 6, 2017
    Date of Patent: May 26, 2020
    Assignees: THALES, COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES
    Inventors: Jean-Luc Reverchon, Axel Evirgen, Florian Le Goff
  • Patent number: 10600927
    Abstract: An infrared detecting semiconductor device comprises: an optical absorbing layer of type-II disposed between first conductivity-type and second conductivity-type semiconductor layers; and an optical filtering film of n-type InGaAs having an n-type dopant concentration larger than 8×1017 cm?3. The optical filtering film includes first to third semiconductor regions, which are sequentially arranged in a direction of a first axis on the optical filtering film. The first semiconductor region has an n-type dopant concentration of 2.0×1019 cm?3 or more. The third semiconductor region has a n-type concentration of 3.0×1018 cm?3 or less. The second semiconductor region has an n-type dopant profile monotonically changing from a first dopant concentration at a boundary between the first and second semiconductor regions to a second dopant concentration at a boundary between the second and third semiconductor regions. The first dopant concentration is greater than the second dopant concentration.
    Type: Grant
    Filed: April 20, 2018
    Date of Patent: March 24, 2020
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Sundararajan Balasekaran, Hiroshi Inada
  • Patent number: 10580821
    Abstract: This light-receiving element includes a plurality of photoelectric conversion layers, each of which includes a compound semiconductor, and absorbs a wavelength in an infrared region to generate an electric charge, and an insulating film that is provided to surround each of the plurality of photoelectric conversion layers.
    Type: Grant
    Filed: December 27, 2016
    Date of Patent: March 3, 2020
    Assignee: SONY CORPORATION
    Inventor: Shinichi Yoshida
  • Patent number: 10481433
    Abstract: An optical/RF apparatus comprising a liquid crystal (LC) layer placed above or below a plasmon layer (e.g., a periodic array of graphene ribbons) to enable the tuning of the surface plasmons by varying the voltage applied to the LC to realize thereby devices such as tunable mid-IR, far-IR or THz modulators and filters.
    Type: Grant
    Filed: August 30, 2018
    Date of Patent: November 19, 2019
    Assignee: United States of America as represented by the Secretary of the Air Force
    Inventors: Victor Yu Reshetnyak, Dean R. Evans
  • Patent number: 10468540
    Abstract: An AlSb lattice matched barrier infrared detector architecture with the AlSb binary barrier layer enables implementation of strain layer superlattice absorbers with higher absorption coefficients for improved quantum efficiency, presents a simplified structure for epitaxial growth, and enables the utilization of bulk InAs0.815Sb0.185 absorber material with a 5.0 ?m cutoff for both single and dual color devices. Such an infrared detector is formed by growing the detector material; bottom contact, 1st absorber layer, AlSb barrier, optional graded layer, 2nd absorber layer, top contact, on top of an AlSb lattice matched buffer layer. Epitaxial growth on the AlSb lattice enables the deposition of unstrained bulk InAs0.815Sb0.185 with a 5.0 ?m cutoff, as well as InAs/InAs(x)Sb(1-x) superlattice absorbers with a continuously tunable cutoff from mid-wavelength to long-wavelength infrared.
    Type: Grant
    Filed: December 23, 2013
    Date of Patent: November 5, 2019
    Assignee: UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE ARMY
    Inventors: Neil F. Baril, Sumith V. Bandara
  • Patent number: 10466613
    Abstract: A light-emitting device includes multiple transfer elements, multiple setting elements, multiple light-emitting elements, and a controller. The transfer elements sequentially enter an on state. The setting elements are connected to the transfer elements. In response to the transfer elements entering the on state, the setting elements are allowed to enter an on state. Each of the light-emitting elements is connected to a corresponding one of the setting elements. In response to each of the setting elements entering the on state, the corresponding one of the light-emitting elements enters an on state to emit light or increase a light emission intensity thereof. The light-emitting elements are maintained in the on state in parallel. The controller controls the setting elements to enter the on state in accordance with a received illumination control signal, and controls an illumination period of the light-emitting elements.
    Type: Grant
    Filed: March 6, 2018
    Date of Patent: November 5, 2019
    Assignee: FUJI XEROX CO., LTD.
    Inventors: Takashi Kondo, Seiji Ono, Chikaho Ikeda
  • Patent number: 10466571
    Abstract: Methods, systems, and devices are disclosed for implementing electro-optical modulators in which a resonating cavity structure is coupled to a transmission waveguide. In one example, the resonating structure includes a ring resonator whose coupling strength is controlled via an electrical control signal. The ring resonator is made of a capacitor comprising monolayer graphene sheets separated by a thick layer of dielectric material.
    Type: Grant
    Filed: November 9, 2015
    Date of Patent: November 5, 2019
    Assignee: Cornell University
    Inventors: Christopher Phare, Michal Lipson
  • Patent number: 10462323
    Abstract: A laser printing system includes a laser configured to produce a beam of light modulated according to image data input to the laser printing system, a photoreceptor drum including a photoconductive layer disposed along an outer peripheral surface of the photoreceptor drum, and a non-mechanical beam steerer configured for receiving the modulated light beam from the laser and steering the light beam in a scanning motion back and forth across the photoconductive layer of the photoreceptor drum. The laser printing system also includes a printer controller configured to structure the image data input to the laser printing system, and control an amount of electrical current flowing through portions of the non-mechanical beam steerer to change an effective index of refraction of the non-mechanical beam steerer and steer the modulated light beam in the scanning motion.
    Type: Grant
    Filed: June 28, 2018
    Date of Patent: October 29, 2019
    Assignee: CAPITAL ONE SERVICES, LLC
    Inventor: David Wurmfeld
  • Patent number: 10453995
    Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprising: a light-emitting stack; and a semiconductor layer having a first surface connecting to the light-emitting stack, a second surface opposite to the first surface, and a void; wherein the void comprises a bottom part near the first surface and an opening on the second surface, and a dimension of the bottom part is larger than the dimension of the opening.
    Type: Grant
    Filed: August 25, 2017
    Date of Patent: October 22, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Wen-Luh Liao, Chih-Chiang Lu, Shih-Chang Lee, Hung-Ta Cheng, Hsin-Chan Chung, Yi-Chieh Lin
  • Patent number: 10439093
    Abstract: A photovoltaic photodetector includes a substrate, a graphene layer, and a dielectric layer positioned between the substrate and the graphene layer. One or more first antenna electrodes includes a first metal in direct contact with the graphene layer. One or more second antenna electrodes includes a second metal in direct contact with the graphene layer. The first and second metals have different work functions. A drain electrode is electrically coupled to the one or more first antenna electrodes, and a source electrode is electrically coupled to the one or more second antenna electrodes. The photovoltaic photodetector can be configured to be operable over a wavelength region of 2 ?m to 24 ?m and has a response time of 10 ns or less.
    Type: Grant
    Filed: April 14, 2017
    Date of Patent: October 8, 2019
    Assignee: Arizon Board of Regents on behalf of Arizona State University
    Inventor: Yu Yao
  • Patent number: 10401543
    Abstract: A type-II hybrid absorber photodetector (PD) is provided with ultrafast speed and high-power performance at terahertz (THz) regime. Through narrowed bandgap and enhanced absorption process at a type-II interface between absorption layers of gallium arsenic antimonide (GaAs0.5Sb0.5) and indium gallium arsenide (In0.53Ga0.47As), the incorporation of the type-II P+-GaAs0.5Sb0.5/i-In0.53Ga0.47As hybrid absorber in an indium phosphide (InP) UTC-PD obtains improvement in responsivity. Current blocking effect is minimized owing to the high-excess energy of photo-generated electrons injected from the GaAs0.5Sb0.5 layer to an InP-based collector layer. The flip-chip bonding packaged device shows a moderate responsivity along with a record wide optical-to-electrical bandwidth at 0.33 THz, among all the reported for long-wavelength ultrafast PDs. A saturation current exceeding 13 mA and a continuous-wave output power of ?3 decibel-milliwatts are demonstrated at an operating frequency of 0.
    Type: Grant
    Filed: September 5, 2018
    Date of Patent: September 3, 2019
    Assignee: National Central University
    Inventor: Jin-Wei Shi
  • Patent number: 10353280
    Abstract: A light converter (200) comprises: a solid-state light conversion material (201) that generates emission light from excitation light incident on its surface; a filler layer (230, 240) on the surface of the solid-state light conversion material (201); and an optical coating (220, 250) on the filler layer. The optical coating (220, 250) may be a thin film, such as an anti-reflective coating (220) and/or a high-reflective coating (250). A metallic coating (260) may additionally be provided. The light converter (200) may be used for an optical device, such as a phosphor wheel or automotive headlight.
    Type: Grant
    Filed: April 7, 2015
    Date of Patent: July 16, 2019
    Assignee: MATERION CORPORATION
    Inventors: Yuyong Huang, Simon Cao
  • Patent number: 10312399
    Abstract: A photodiode having a reduced dark current includes a semiconductor layer, a first contact part, a second contact part, and an active region. The first contact part disposed in a first region of the semiconductor layer includes an interlayer and at least one metal layer. The second contact part disposed in a second region of the semiconductor layer includes at least one metal layer. The active region is disposed between the first contact part and the second contact part. The first contact part and the second contact part are arranged asymmetrical to each other.
    Type: Grant
    Filed: March 6, 2018
    Date of Patent: June 4, 2019
    Assignees: SK HYNIX INC., KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION
    Inventors: Hyun-Yong Yu, Hwan-Jun Zang
  • Patent number: 10260946
    Abstract: Optical computing devices may include capacitance-based nanomaterial detectors. For example, an optical computing device may include a light source that emits electromagnetic radiation into an optical train extending from the light source to a capacitance-based nanomaterial detector; a material positioned in the optical train to optically interact with the electromagnetic radiation and produce optically interacted light; and the capacitance-based nanomaterial detector comprising one or more nano-sized materials configured to have a resonantly-tuned absorption spectrum and being configured to receive the optically interacted light, apply a vector related to the characteristic of interest to the optically interacted light using the resonantly-tuned absorption spectrum, and generate an output signal indicative of the characteristic of interest.
    Type: Grant
    Filed: November 13, 2015
    Date of Patent: April 16, 2019
    Assignee: Halliburton Energy Services, Inc.
    Inventors: James M. Price, Aditya B. Nayak, David L. Perkins, Michael T. Pelletier
  • Patent number: 10254478
    Abstract: In one aspect, a composition of matter is disclosed, which comprises a photonic crystal comprising a plurality of 2D or 3D periodically repeating structures, where the structures are configured and arranged relative to one another such that the photonic crystal exhibits a Dirac cone at the center of the Brillouin zone of its reciprocal lattice, e.g., at one frequency in the optical regime. In some embodiments, the structures are formed of a dielectric material.
    Type: Grant
    Filed: July 29, 2016
    Date of Patent: April 9, 2019
    Assignee: President And Fellows Of Harvard College
    Inventors: Eric Mazur, Yang Li, Orad Reshef, Marko Loncar, Shota Kita, Philip Alejandro Munoz, Daryl Vulis
  • Patent number: 10243314
    Abstract: A device for a gain medium for a semiconductor laser has an active region, a buffer layer, a substrate, and an etch stop between the buffer layer and the substrate. The device is bonded to a silicon platform having silicon devices, such as a waveguide and mirror. The substrate is removed, after bonding the device to the platform. The buffer layer is made of different material than the substrate to reduce undercut of the buffer layer during substrate removal compared to a buffer layer made of the same material as the substrate.
    Type: Grant
    Filed: September 19, 2016
    Date of Patent: March 26, 2019
    Assignee: Skorpios Technologies, Inc.
    Inventor: John Y. Spann
  • Patent number: 10217500
    Abstract: The present invention relates to an inductive spin-orbit torque device and the method for fabricating the same. The method comprises steps of depositing a two-dimensional thin film using chemical vapor deposition (CVD) and sputtering a ferromagnetic material on the thin film. The crystal structure of the two-dimensional thin film includes at least one lattice plane arranged asymmetrically. The thickness of the two-dimensional thin film includes at least one unit-cell layer. The sum of the at least one unit-cell layer is an odd number. By using the vertical magnetic torque generated by the two-dimensional thin film and the miniaturization in thickness, the device size and the fabrication costs may be reduced.
    Type: Grant
    Filed: October 2, 2017
    Date of Patent: February 26, 2019
    Assignee: National Applied Research Laboratories
    Inventors: Yann-Wen Lan, Qiming Shao, Guoqiang Yu, Kang-Lung Wang, Wen-Kuan Yeh
  • Patent number: 10197903
    Abstract: Embodiments of the disclosure provide a projection display apparatus comprising: a light source for emitting a light beam; a first light path configured to project the light beam emitted from the light source to a first display position; a second light path configured to project the light beam emitted from the light source to a second display position; a light patch switching device configured to switch the light beam emitted from the light source between the first light path and the second light path; and a light modulation device through which both the first light path and the second light path pass, wherein the light modulation device is configured to modulate the light beam passing therethrough to generate a display image.
    Type: Grant
    Filed: May 13, 2016
    Date of Patent: February 5, 2019
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventor: Zhongxiao Li
  • Patent number: 10170660
    Abstract: A photovoltaic device includes a digital alloy buffer layer including a plurality of alternating layers of semiconductor material. An absorption layer epitaxially is grown on the digital alloy buffer layer, an intrinsic layer is formed on the absorption layer and a doped layer is formed on the intrinsic layer. A conductive contact is formed on the doped layer.
    Type: Grant
    Filed: December 22, 2015
    Date of Patent: January 1, 2019
    Assignee: International Business Machines Corporation
    Inventors: Karthik Balakrishnan, Stephen W. Bedell, Pouya Hashemi, Bahman Hekmatshoartabari, Alexander Reznicek
  • Patent number: 10115837
    Abstract: Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a substrate with a handle layer, a buried insulator layer overlying the handle layer, and an active layer overlying the buried insulator layer. The handle layer and the active layer include monocrystalline silicon. A transistor overlies the buried insulator layer, and a solar cell is within the handle layer such that the buried insulator layer is between the solar cell and the transistor. The solar cell includes a solar cell outer layer in electrical communication with a solar cell outer layer contact, and a solar cell inner layer in electrical communication with a solar cell inner layer contact. The solar cell inner and outer layers are monocrystalline silicon.
    Type: Grant
    Filed: September 28, 2017
    Date of Patent: October 30, 2018
    Assignee: Globalfoundries Singapore Pte. Ltd.
    Inventors: Bin Liu, Eng Huat Toh
  • Patent number: RE47964
    Abstract: Provided is a display device. The display device includes a circuit substrate, a light source electrically connected to the circuit substrate, the light source being disposed under the circuit substrate, and a light conversion member disposed on a light emitting surface of the light source and a side of the circuit substrate, the light conversion member converting a wavelength of light emitted from the light source. Here, the light conversion member is disposed also on a side surface of the circuit substrate and converts a wavelength of light emitted from the light source. Since the light conversion member is disposed on the side surface of the circuit substrate, the light conversion member may be aligned with the light source without interfering with the circuit substrate. Thus, the display device may effectively convert the wavelength of the light emitted from the light source to realize improved brightness and color impression.
    Type: Grant
    Filed: August 3, 2017
    Date of Patent: April 28, 2020
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Jung Mok Lee, Jae Hyun Jin
  • Patent number: RE48012
    Abstract: Provided is a display device. The display device includes a circuit substrate, a light source electrically connected to the circuit substrate, the light source being disposed under the circuit substrate, and a light conversion member disposed on a light emitting surface of the light source and a side of the circuit substrate, the light conversion member converting a wavelength of light emitted from the light source. Here, the light conversion member is disposed also on a side surface of the circuit substrate and converts a wavelength of light emitted from the light source. Since the light conversion member is disposed on the side surface of the circuit substrate, the light conversion member may be aligned with the light source without interfering with the circuit substrate. Thus, the display device may effectively convert the wavelength of the light emitted from the light source to realize improved brightness and color impression.
    Type: Grant
    Filed: September 6, 2017
    Date of Patent: May 26, 2020
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Jung Mok Lee, Jae Hyun Jin