Abstract: A light-receiving element includes an InP substrate 1, a light-receiving layer 3 having an MQW and located on the InP substrate 1, a contact layer 5 located on the light-receiving layer 3, a p-type region 6 extending from a surface of the contact layer 5 to the light-receiving layer, and a p-side electrode 11 that forms an ohmic contact with the p-type region. The light-receiving element is characterized in that the MQW has a laminated structure including pairs of an InxGa1-xAs (0.38?x?0.68) layer and a GaAs1-ySby (0.25?y?0.73) layer, and in the GaAs1-ySby layer, the Sb content y in a portion on the InP substrate side is larger than the Sb content y in a portion on the opposite side.

Abstract: An electro-optical device can include a plurality of nanocrystals positioned between a first electrode and a second electrode. The nanocrystal and at least one electrode can have a band gap offset sufficient to inject a charge carrier from the first electrode or second electrode into the nanocrystal. The device can be a secondary photoconductor.

Abstract: In a method for making a GaN article, an epitaxial nitride layer is deposited on a single-crystal substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode. A GaN transitional layer is grown on the 3D nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. A bulk GaN layer is grown on the transitional layer by HVPE under the substantially 2D growth mode. A polycrystalline GaN layer is grown on the bulk GaN layer to form a GaN/substrate bi-layer. The GaN/substrate bi-layer may be cooled from the growth temperature to an ambient temperature, wherein GaN material cracks laterally and separates from the substrate, forming a free-standing article.

Abstract: A method for manufacturing a photodiode including the steps of providing a substrate, solution depositing a quantum nanomaterial layer onto the substrate, the quantum nanomaterial layer including a number of quantum nanomaterials having a ligand coating, and applying a thin-film oxide layer over the quantum nanomaterial layer.

Abstract: Provided is a photo active layer for a solar cell or a light emitting diode and a fabricating method thereof. The photo active layer is formed by alternately stacking silicon quantum dot layers in which a plurality of silicon quantum dots containing conductive type impurities are formed in a medium, which is a silicon compound, and conductive layers, which are polycrystalline silicon layers, containing the same conductive type impurities as those of the silicon quantum dots.

Abstract: Provided is, for example, a photodiode in which extension of the sensitivity range to a longer wavelength in the near-infrared region can be achieved without increasing the dark current. A photodiode according to the present invention includes an absorption layer 3 that is positioned on an InP substrate 1 and has a type-II multiple-quantum well structure in which an InGaAs layer 3a and a GaAsSb layer 3b are alternately layered, wherein the InGaAs layer or the GaAsSb layer has a composition gradient in the thickness direction in which the bandgap energy of the InGaAs or the GaAsSb decreases toward the top surface or the bottom surface of the layer.

Abstract: An electrical device comprising (A) a substrate having a surface and (B) a nanohole superlattice superimposed on a portion of the surface is provided. The nanohole superlattice comprises a plurality of sheets having an array of holes defined therein. The array of holes is characterized by a band gap or band gap range. The plurality of sheets forms a first edge and a second edge. A first lead comprising a first electrically conductive material forms a first junction with the first edge. A second lead comprising a second electrically conductive material forms a second junction with the second edge. The first junction is a Schottky barrier with respect to a carrier. In some instances a metal protective coating covers all or a portion of a surface of the first lead. In some instances, the first lead comprises titanium, the second lead comprises palladium, and the metal protective coating comprises gold.

Abstract: Single-photon detectors, arrays of single-photon detectors, methods of using the single-photon detectors and methods of fabricating the single-photon detectors are provided. The single-photon detectors combine the efficiency of a large absorbing volume with the sensitivity of nanometer-scale carrier injectors, called “nanoinjectors”. The photon detectors are able to achieve single-photon counting with extremely high quantum efficiency, low dark count rates, and high bandwidths.

Abstract: Photoconductive optoelectronic devices, such as photodetectors and photovoltaics, are provided. The devices are sensitized to a particular wavelength (or range of wavelengths) of electromagnetic radiation such that the devices provide increased performance efficiency (e.g., external quantum efficiency) at the wavelength. The devices include a photoconductive semiconductor layer spanning an electrode gap between two electrodes to provide a photoconductive electrical conduit. Abutting the semiconductor layer is a plurality of plasmonic nanoparticles. The improved efficiency of the devices results from wavelength-dependent plasmonic enhancement of device photosensitivity by the plasmonic nanoparticles.

Abstract: An object of the present invention is to provide, for example, a photodiode that can have sufficiently high sensitivity in a near-infrared wavelength range of 1.5 ?m to 1.8 ?m and can have a low dark current. A photodiode (10) according to the present invention includes a buffer layer (2) positioned on and in contact with an InP substrate (1), and an absorption layer (3) positioned on and in contact with the buffer layer, wherein the absorption layer includes 50 or more pairs in which a first semiconductor layer 3a and a second semiconductor layer 3b constitute a single pair, the first semiconductor layer 3a having a bandgap energy of 0.73 eV or less, the second semiconductor layer 3b having a larger bandgap energy than the first semiconductor layer 3a, and the first semiconductor layer 3a and the second semiconductor layer 3b constitute a strain-compensated quantum well structure and each have a thickness of 1 nm or more and 10 nm or less.

Abstract: Embodiments of the invention are directed to an IR photodetector that broadly absorbs electromagnetic radiation including at least a portion of the near infrared (NIR) spectrum. The IR photodetector comprises polydispersed QDs of PbS and/or PbSe. The IR photodetector can be included as a layer in an up-conversion device when coupled to a light emitting diode (LED) according to an embodiment of the invention.

Abstract: An electrical device in provided having two electrodes separated from one another, wherein one temperature controlled electronic spin-state transition particle is in direct contact with each of the two electrodes, the particle being of the ionic type and containing a transition metal bearing a cationic charge.

Abstract: In at least one embodiment, an infrared (IR) sensor comprising a thermopile is provided. The thermopile comprises a substrate and an absorber. The absorber is positioned above the substrate and a gap is formed between the absorber and the substrate. The absorber receives IR from a scene and generates an electrical output indicative of a temperature of the scene. The absorber is formed of a super lattice quantum well structure such that the absorber is thermally isolated from the substrate. In another embodiment, a method for forming an infrared (IR) detector is provided. The method comprises forming a substrate and forming an absorber with a plurality of alternating first and second layers with a super lattice quantum well structure. The method further comprises positioning the absorber about the substrate such that a gap is formed to cause the absorber to be suspended about the substrate.

Abstract: A light receiving device includes a microlens 21 located in each of regions corresponding to pixels, the microlens being disposed on a rear surface of an InP substrate 1. The microlens is formed by using a resin material having a range of a transmittance of light in the wavelength region between 0.7 and 3 ?m of 25% or less, the transmittance being 70% or more.

Abstract: Implementations and techniques for coupled asymmetric quantum confinement structures are generally disclosed.

Abstract: The present invention relates to a photodetector for detecting an infrared-light emission having a given wavelength (?) comprising a multilayer with: a layer (11) of a partially absorbent semiconductor; a spacer layer (12) made of a material that is transparent to said wavelength; and a structured metallic mirror (13), the distance (g) between the top of said mirror and said spacer layer being smaller than ? and said mirror comprising a network of holes defining an array of metallic reliefs with a pitch P of between 0.5 ?/nSC and 1.5 ?/nSC, where nSC is the real part of the refractive index of the semiconductor, a relief width L of between 9P/10 and P/2 and a hole depth h of between ?/100 and ?/15.

Abstract: A high-sensitivity detector for opto-electronic detection using multiwall carbon nanotubes (MWCNTs) is provided. More specifically, multiwall carbon nanotube films demonstrate an infrared bolometric photoresponse higher than SWCNT films at room temperature. The observed D* exceeding 3.3×106 cm Hz1/2/W with MWCNT-film bolometers and can be further improved to over 1×107 cm Hz1/2/W by adding graphene flakes. The response time of about 1-2 milliseconds with MWCNT bolometers is more than an order of magnitude shorter than that of SWCNT bolometers. For individual MWCNTs with specially designed asymmetric Schottky contacts, one on the sidewall and the other covering the end, the photocurrent has been efficiently harvested and provides a higher detectivity of 6.2×109 cm·Hz1/2/W at room temperature, which is one order of magnitude higher than the convectional VOx detector and makes MWCNT competitive for practical optoelectronic detections over infrared and even longer wavelength range.

Abstract: Photovoltaic modules with adhesion promoters and methods for fabricating photovoltaic modules with adhesion promoters are described. A photovoltaic module includes a solar cell including a first surface and a second surface, the second surface including a plurality of interspaced back-side contacts. A first glass layer is coupled to the first surface by a first encapsulating layer. A second glass layer is coupled to the second surface by a second encapsulating layer. At least a portion of the second encapsulating layer is bonded directly to the plurality of interspaced back-side contacts by an adhesion promoter.

Abstract: Systems and methods for modulating light with light in high index contrast waveguides clad with graphene. Graphene exhibits a large nonlinear electro-optic constant ?3. Waveguides fabricated on SOI wafers and clad with graphene are described. Systems and methods for modulating light with light are discussed. Optical logic gates are described. Waveguides having closed loop structures such as rings and ovals, Mach-Zehnder interferometer, grating, and Fabry-Perot configurations, are described. Optical signal processing methods, including optical modulation at Terahertz frequencies, are disclosed. Optical detectors are described. Microelectromechanical and nanoelectromechanical systems using graphene on silicon substrates are described.

Abstract: A photovoltaic cell is provided as a composite unit together with elements of an integrated circuit on a common substrate. In a described embodiment, connections are established between a multiple photovoltaic cell portion and a circuitry portion of an integrated structure to enable self-powering of the circuitry portion by the multiple photovoltaic cell portion.

Abstract: A light receiving element includes an InP substrate that is transparent to light having a wavelength of 3 to 12 ?m, a buffer layer located in contact with the InP substrate, and a light-receiving layer having a multiple quantum well structure, the light-receiving layer having a cutoff wavelength of 3 ?m or more and being lattice-matched with the buffer layer. In the light receiving element, the buffer layer is epitaxially grown on the InP substrate while the buffer layer and the InP substrate exceed a range of a normal lattice-matching condition, and the buffer layer is constituted by a GaSb layer.

Abstract: Room temperature IR and UV photodetectors are provided by electrochemical self-assembly of nanowires. The detectivity of such IR detectors is up to ten times better than the state of the art. Broad peaks are observed in the room temperature absorption spectra of 10-nm diameter nanowires of CdSe and ZnS at photon energies close to the bandgap energy, indicating that the detectors are frequency selective and preferably detect light of specific frequencies. Provided is a photodetector comprising: an aluminum substrate; a layer of insulator disposed on the aluminum substrate and comprising an array of columnar pores; a plurality of semiconductor nanowires disposed within the pores and standing vertically relative to the aluminum substrate; a layer of nickel disposed in operable communication with one or more of the semiconductor nanowires; and wire leads in operable communication with the aluminum substrate and the layer of nickel for connection with an electrical circuit.

Abstract: Amongst the candidates for very high efficiency electronics, solid state light sources, photovoltaics, and photoelectrochemical devices, and photobiological devices are those based upon metal-nitride nanowires. Enhanced nanowire performance typically require heterostructures, quantum dots, etc which requirement that these structures are grown with relatively few defects and in a controllable reproducible manner. Additionally flexibility according to the device design requires that the nanowire at the substrate may be either InN or GaN. Methods of growing relatively defect free nanowires and associated structures for group IIIA-nitrides are presented without the requirement for foreign metal catalysts, overcoming the non-uniform growth of prior art techniques and allowing self-organizing quantum dot, quantum well and quantum dot-in-a-dot structures to be formed.

Abstract: Provided is a light receiving circuit for detecting a change in amount of light, in which an input circuit at a subsequent stage is compact and inexpensive and current consumption is low. The light receiving circuit includes: a photoelectric conversion element for supplying a current corresponding to an amount of incident light; an N-channel MOS transistor including a drain supplied with the current from the photoelectric conversion element; and a control circuit for controlling a gate voltage of the NMOS transistor via a low pass filter so that a drain voltage of the N-channel MOS transistor becomes a desired voltage.

Abstract: Light emitting devices comprise excitation sources arranged to excite quantum dots which fluoresce to emit light. In an embodiment, a device is manufactured by a process which involves applying an acoustic field is applied to a fluid containing quantum dots, to cause the quantum dots to accumulate at locations which are adjacent to excitation sources, and then initiating a phase transition of the fluid to trap the quantum dots in the locations adjacent to the excitation sources. The quantum dots are illuminated during the process and the resulting fluorescence is optically monitored to provide indicators of quantum dot distribution in the fluid. These indicators are used as feedback for controlling aspects of the process, such as initiating the phase transition.

Abstract: A system includes a substrate having a plurality of three-dimensional photonic crystal elements directly coupled thereto. The photonic crystal elements may each partially or substantially coated with oriented graphene and may comprise undoped silicon. The graphene may be oriented in a direction parallel to or normal to the photonic crystal element and may comprise graphene flakes contained within a composite thin film. The system may also include at least one optical component, such as a waveguide, contained within the plurality of three-dimensional photonic crystal elements. A method is also provided for preparing the graphene and coating the photonic crystal elements with the graphene.

Abstract: Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.

Abstract: Methods and devices are provided for absorber layers formed on foil substrate. In one embodiment, a method of manufacturing photovoltaic devices may be comprised of providing a substrate comprising of at least one electrically conductive aluminum foil substrate, at least one electrically conductive diffusion barrier layer, and at least one electrically conductive electrode layer above the diffusion barrier layer. The diffusion barrier layer may prevent chemical interaction between the aluminum foil substrate and the electrode layer. An absorber layer may be formed on the substrate. In one embodiment, the absorber layer may be a non-silicon absorber layer. In another embodiment, the absorber layer may be an amorphous silicon (doped or undoped) absorber layer. Optionally, the absorber layer may be based on organic and/or inorganic materials.

Abstract: A photoelectrode, methods of making and using, including systems for water-splitting are provided. The photoelectrode can be a semiconducting material having a photocatalyst such as nickel or nickel-molybdenum coated on the material. The photoelectrode includes an elongated axially integrated wire having at least two different wire compositions.

Abstract: A photodiode capable of interacting with incident photons includes at least: a stack of three layers including an intermediate layer placed between a first semiconductor layer and a second semiconductor layer having a first conductivity type; and a region that is in contact with at least the intermediate layer and the second layer and extends transversely relative to the planes of the three layers, the region having a conductivity type that is opposite to the first conductivity type. The intermediate layer is made of a semiconductor material having a second conductivity type and is capable of having a conductivity type that is opposite to the second conductivity type so as to form a P-N junction with the region, inversion of the conductivity type of the intermediate layer being induced by dopants of the first conductivity type that are present in the first and second layers.

Abstract: Problems exist in areas such as image visibility, endurance of the device, precision, miniaturization, and electric power consumption in an information device having a conventional resistive film method or optical method pen input function. Both EL elements and photoelectric conversion elements are arranged in each pixel of a display device in an information device of the present invention having a pen input function. Information input is performed by the input of light to the photoelectric conversion elements in accordance with a pen that reflects light by a pen tip. An information device with a pen input function, capable of displaying a clear image without loss of brightness in the displayed image, having superior endurance, capable of being miniaturized, and having good precision can thus be obtained.

Abstract: A transmissive light modulator including a first reflection layer; a first active layer, arranged on the first reflection layer and including a plurality of quantum well layers and a plurality of barrier layers; a second reflection layer arranged on the first active layer; a second active layer, arranged on the second reflection layer and including a plurality of quantum well layers and a plurality of barrier layers; and a third reflection layer arranged on the second active layer, wherein the first reflection layer and the third reflection layer are each doped with a first type dopant, and the second reflection layer is doped with a second type dopant, which is electrically opposite to the first type dopant.

Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.

Abstract: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.

Abstract: A first electrode layer is disposed on a substrate and a first active layer is disposed thereon. The first active layer includes a first barrier layer and a plurality of first quantum dots that are distributed in the first barrier layer and have a band gap narrower than that of the first barrier layer. A second electrode layer is disposed on the first active layer. On the second active layer, a second active layer is disposed. The second active layer includes a second barrier layer and a plurality of second quantum dots that are distributed in the second barrier layer and have a band gap narrower than that of the second barrier layer. A third electrode layer is disposed on the second active layer. The first quantum dots are larger than the second quantum dots.

Abstract: A method for manufacturing a semiconductor device, by which a multiple quantum well structure having a large number of pairs can be efficiently grown while maintaining good crystalline quality, and the semiconductor device, are provided. The semiconductor device manufacturing method of the present invention includes a step of forming a multiple quantum well structure 3 having 50 or more pairs of group III-V compound semiconductor quantum wells. In the step of forming the multiple quantum well structure 3, the multiple quantum well structure is formed by metal-organic vapor phase epitaxy using only metal-organic sources (all metal-organic source MOVPE).

Abstract: In accordance with an example embodiment of the present invention, an apparatus including a nanopillar and a graphene film, the graphene film being in contact with a first end of the nanopillar, wherein the nanopillar includes a metal, the contact being configured to form an intrinsic field region in the graphene film, and wherein the apparatus is configured to generate a photocurrent from a photogenerated charge carrier in the intrinsic field region.

Abstract: A superconducting nanowire avalanche photodetector (SNAP) with improved high-speed performance. An inductive element may be coupled in series with at least two parallel-coupled nanowires. The nanowires may number 5 or fewer, and may be superconducting and responsive to even a single photon. The series inductor may ensure current diverted from a photon-absorbing nanowire propagates to other nanowires and become amplified. The series inductance may be less than 10 times the nominal inductance per nanowire, and may also be larger than a minimum inductance to avoid spurious outputs in response to a photon absorption. The series inductance may be configured to achieve a desired tradeoff between SNAP reset time and spurious outputs. For example, the series inductance may be configured achieve minimum reset time or maximum bias margin, subject to user-defined constraints. By appropriately configuring the series inductance, a systematic method of designing improved SNAPs may be provided.

Abstract: An apparatus includes a nanocrystal. The nanocrystal includes a core including FeS2; and a coating including a ligand component capable of chemically interacting with both an iron atom and a sulfur atom on a surface of the core.

Abstract: A 1D nanowire photodetector device includes a nanowire that is individually contacted by electrodes for applying a longitudinal electric field which drives the photocurrent. An intrinsic radial electric field to inhibits photo-carrier recombination, thus enhancing the photocurrent response. Circuits of 1D nanowire include groups of photodetectors addressed by their individual 1D nanowire electrode contacts. Placement of 1D nanostructures is accomplished with registration onto a substrate. A substrate is patterned with a material, e.g., photoresist, and trenches are formed in the patterning material at predetermined locations for the placement of 1D nanostructures. The 1D nanostructures are aligned in a liquid suspension, and then transferred into the trenches from the liquid suspension. Removal of the patterning material places the 1D nanostructures in predetermined, registered positions on the substrate.

Abstract: A microcavity-controlled two-dimensional carbon lattice structure device selectively modifies to reflect or to transmit, or emits, or absorbs, electromagnetic radiation depending on the wavelength of the electromagnetic radiation. The microcavity-controlled two-dimensional carbon lattice structure device employs a graphene layer or at least one carbon nanotube located within an optical center of a microcavity defined by a pair of partial mirrors that partially reflect electromagnetic radiation. The spacing between the mirror determines the efficiency of elastic and inelastic scattering of electromagnetic radiation inside the microcavity, and hence, determines a resonance wavelength of electronic radiation that is coupled to the microcavity. The resonance wavelength is tunable by selecting the dimensional and material parameters of the microcavity. The process for manufacturing this device is compatible with standard complementary metal oxide semiconductor (CMOS) manufacturing processes.

Abstract: A photodetector and a method of manufacturing the photodetector are provided, in which variation in sensitivity is suppressed over the near-infrared region from the short wavelength side including 1.3 ?m to the long wavelength side. The photodetector includes, on an InP substrate, an absorption layer of a type II multiple quantum well structure comprising a repeated structure of a GaAsSb layer and an InGaAs layer, and has sensitivity in the near-infrared region including wavelengths of 1.3 ?m and 2.0 ?m. The ratio of the sensitivity at the wavelength of 1.3 ?m to the sensitivity at the wavelength of 2.0 ?m is not smaller than 0.5 but not larger than 1.6.

Abstract: An embodiment of the present invention improves the fabrication and operational characteristics of a type-II superlattice material. Layers of indium arsenide and gallium antimonide comprise the bulk of the superlattice structure. One or more layers of indium antimonide are added to unit cells of the superlattice to provide a further degree of freedom in the design for adjusting the effective bandgap energy of the superlattice. One or more layers of gallium arsenide are added to unit cells of the superlattice to counterbalance the crystal lattice strain forces introduced by the aforementioned indium antimonide layers.

Abstract: A device includes a generally planar substrate and a plurality of light absorbing elements extending outwardly from the substrate. Each of the light absorbing elements includes a doped outer shell, an inner core disposed inside the outer shell and a two-dimensional electron gas sheet extending and confined between the outer shell and the inner core, with a concentric cylinder of two-dimensional electron or hole gas produced in the junction between the outer shell and the inner core.

Abstract: A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.

Abstract: Ultraviolet or Extreme Ultraviolet and/or visible detector apparatus and fabrication processes are presented, in which the detector includes a thin graphene electrode structure disposed over a semiconductor surface to provide establish a potential in the semiconductor material surface and to collect photogenerated carriers, with a first contact providing a top side or bottom side connection for the semiconductor structure and a second contact for connection to the graphene layer.

Abstract: Assembly system for photovoltaic packages. According an embodiment, the present invention provides a system for assembling photovoltaic packages. The system includes a base plate member, which comprises a plurality of coupling elements. The plurality of coupling elements are characterized by a first length. The plurality of coupling elements is aligned according to a predetermined configuration. The plurality of coupling elements includes first and second coupling elements. The system also includes a top plate member, which includes a plurality of openings and a plurality of locator elements. The plurality of openings is characterized by a second length. The second length is greater than the first length. The openings and the locator elements are aligned according to the first predetermined configurations. The top plate member is disengageably coupled to the base plate member by the coupling elements and the openings.

Abstract: An electro-magnetic radiation detector is described. The electro-magnetic radiation detector includes a detector material and a voltage biasing element. The detector material includes a substantially regular array of nano-particles embedded in a matrix material. The voltage biasing element is configured to apply a bias voltage to the matrix material such that electrical current is directly generated based on a cooperative plasmon effect in the detector material when electro-magnetic radiation in a predetermined wavelength range is incident upon the detector material, where the dominant mechanism for decay in the cooperative plasmon effect is non-radiative.

Abstract: Processes for forming quantum well structures which are characterized by controllable nitride content are provided, as well as superlattice structures, optical devices and optical communication systems based thereon.

Abstract: Embodiments of the subject invention relate to a method and apparatus for infrared (IR) detection. Organic layers can be utilized to produce a phototransistor for the detection of IR radiation. The wavelength range of the IR detector can be modified by incorporating materials sensitive to photons of different wavelengths. Quantum dots of materials sensitive to photons of different wavelengths than the host organic material of the absorbing layer of the phototransistor can be incorporated into the absorbing layer so as to enhance the absorption of photons having wavelengths associated with the material of the quantum dots. A photoconductor structure can be used instead of a phototransistor. The photoconductor can incorporate PbSe or PbS quantum dots. The photoconductor can incorporate organic materials and part of an OLED structure. A detected IR image can be displayed to a user. Organic materials can be used to create an organic light-emitting device.