Abstract: A configuration for efficiently placing a group of capacitors with one terminal connected to a common node is described. The capacitors are stacked and folded along the common node. In a stack and fold configuration, devices are stacked vertically (directly or with a horizontal offset) with one terminal of the devices being shared to a common node, and further the capacitors are placed along both sides of the common node. The common node is a point of fold. In one example, the devices are capacitors. N number of capacitors can be divided in L number of stack layers such that there are N/L capacitors in each stacked layer. The N/L capacitors are shorted together with an electrode (e.g., bottom electrode). The electrode can be metal, a conducting oxide, or a combination of a conducting oxide and a barrier material. The capacitors can be planar, non-planar or replaced by memory elements.

Abstract: A memory device includes: a first memory cell mat that includes first multi-layer level sub word lines positioned over a substrate; a second memory cell mat that is laterally spaced apart from the first memory cell mat and includes second multi-layer level sub word lines; a first sub word line driver circuit that is positioned underneath the first memory cell mat; and a second sub word line driver circuit that is positioned underneath the second memory cell mat, wherein the first sub word line driver circuit is positioned underneath ends of the first multi-layer level sub word lines, and the second sub word line driver circuit is positioned underneath ends of the second multi-layer level sub word lines.

Abstract: Methods, systems, and devices for plate node configurations and operations for a memory array are described. A single plate node of a memory array may be coupled to multiple rows or columns of memory cells (e.g., ferroelectric memory cells) in a deck of memory cells. The single plate node may perform the functions of multiple plate nodes. The number of contacts to couple the single plate node to the substrate may be less than the number of contacts to couple multiple plate nodes to the substrate. Connectors or sockets in a memory array with a single plate node may define a size that is less than a size of the connectors or sockets with multiple plate nodes. In some examples, a single plate node of the memory array may be coupled to multiple lines of a memory cells in multiple decks of memory cells.

Abstract: Disclosed is an air gap type film bulk acoustic resonator (FBAR). The air gap type FBAR includes a substrate which includes an air gap portion in a top surface thereof, a lower electrode formed on the substrate, a piezoelectric layer formed on the lower electrode, and an upper electrode formed on the piezoelectric layer. Here, the lower electrode includes a first lower electrode formed spaced apart from the air gap portion in the substrate and a second lower electrode formed on the substrate to be separated from the first lower electrode by being stacked to surround only a part of a top of the air gap portion in order to form a non-deposition area of the air gap portion.

Abstract: Methods, systems, and devices for plate node configurations and operations for a memory array are described. A single plate node of a memory array may be coupled to multiple rows or columns of memory cells (e.g., ferroelectric memory cells) in a deck of memory cells. The single plate node may perform the functions of multiple plate nodes. The number of contacts to couple the single plate node to the substrate may be less than the number of contacts to couple multiple plate nodes to the substrate. Connectors or sockets in a memory array with a single plate node may define a size that is less than a size of the connectors or sockets with multiple plate nodes. In some examples, a single plate node of the memory array may be coupled to multiple lines of a memory cells in multiple decks of memory cells.

Abstract: Metal contact openings are etched in the barrier layer of a group III-N HEMT with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer to a depth that lies above the top surface of a channel layer that touches and lies below the barrier layer.

Abstract: In an embodiment, a fluid ejection device includes an ink slot formed in a printhead die. The fluid ejection device also includes a printhead-integrated ink level sensor (PILS) to sense an ink level of a chamber in fluid communication with the slot, and a clearing resistor circuit disposed within the chamber to clear the chamber of ink.

Abstract: In an embodiment, a fluid ejection device includes an ink slot formed in a printhead die. The fluid ejection device also includes a printhead-integrated ink level sensor (PILS) to sense an ink level of a chamber in fluid communication with the slot, and a clearing resistor circuit disposed within the chamber to clear the chamber of ink.

Abstract: The present disclosure provides systems and methods for storing, reading, and writing data using particle-based acoustic wave driven shift registers. The shift registers may physically shift particles along rows and/or columns of wells through the interactions of two parallel surfaces. A transducer may generate an acoustic wave to displace one or more of the two parallel surfaces. The particles may be transferred to and/or otherwise constrained by a buffer surface during at least a portion of the acoustic wave, such that the particles may be shifted during one or more cycles of the acoustic wave. In various embodiments, the amplitude of the acoustic wave may correspond to the spacing distance between each of the wells. The wells may be physical and/or potential wells.

Abstract: Embodiments of the invention generally relate to nonvolatile memory devices and methods for manufacturing such memory devices. The methods for forming improved memory devices, such as a ReRAM cells, provide optimized, atomic layer deposition (ALD) processes for forming a metal oxide film stack which contains at least one hard metal oxide film (e.g., metal is completely oxidized or substantially oxidized) and at least one soft metal oxide film (e.g., metal is less oxidized than hard metal oxide). The soft metal oxide film is less electrically resistive than the hard metal oxide film since the soft metal oxide film is less oxidized or more metallic than the hard metal oxide film. In one example, the hard metal oxide film is formed by an ALD process utilizing ozone as the oxidizing agent while the soft metal oxide film is formed by another ALD process utilizing water vapor as the oxidizing agent.

Abstract: FinFETS and methods for making FinFETs with a vertical silicide structure. A method includes providing a substrate with a plurality of fins, forming a gate stack above the substrate wherein the gate stack has at least one sidewall and forming an off-set spacer adjacent the gate stack sidewall. The method also includes growing an epitaxial film which merges the fins to form an epi-merge layer, forming a field oxide layer adjacent to at least a portion of the off-set spacer and removing a portion of the field oxide layer to expose a portion of the epi-merge-layer. The method further includes removing at least part of the exposed portion of the epi-merge-layer to form an epi-merge sidewall and an epi-merge spacer region and forming a silicide within the epi-merge sidewall to form a silicide layer and two silicide sidewalls.

Abstract: Embodiments of the invention generally relate to nonvolatile memory devices and methods for manufacturing such memory devices. The methods for forming improved memory devices, such as a ReRAM cells, provide optimized, atomic layer deposition (ALD) processes for forming a metal oxide film stack which contains at least one hard metal oxide film (e.g., metal is completely oxidized or substantially oxidized) and at least one soft metal oxide film (e.g., metal is less oxidized than hard metal oxide). The soft metal oxide film is less electrically resistive than the hard metal oxide film since the soft metal oxide film is less oxidized or more metallic than the hard metal oxide film. In one example, the hard metal oxide film is formed by an ALD process utilizing ozone as the oxidizing agent while the soft metal oxide film is formed by another ALD process utilizing water vapor as the oxidizing agent.

Abstract: A semiconductor device containing an extended drain MOS transistor with an integrated snubber formed by forming a drain drift region of the MOS transistor, forming a snubber capacitor including a capacitor dielectric layer and capacitor plate over the extended drain, and forming a snubber resistor over a gate of the MOS transistor so that the resistor is connected in series between the capacitor plate and a source of the MOS transistor.

Abstract: A method of manufacturing a phase change memory device includes forming a lower electrode layer pattern and an insulating interlayer covering the lower electrode layer pattern, forming a first opening in the insulating interlayer to expose the lower electrode layer pattern, forming an oxide layer pattern on the sidewall of the first opening and a lower electrode under the oxide layer pattern by partially removing the oxide layer and the lower electrode layer pattern, forming an insulation layer filling a remaining portion of the first opening, removing the oxide layer pattern by a wet etching process to form a second opening, and forming a phase change material pattern on the lower electrode such that the phase change material pattern fills the second opening.

Abstract: A housed loudspeaker array includes a first substrate having a plurality of loudspeaker elements formed therein, a second substrate fixed at a first surface of the first substrate in a flip-chip manner and comprising a plurality of orifices that are aligned with the loudspeaker elements of the plurality of loudspeaker elements of the first substrate, and a cover applied to a second surface of the first substrate opposite to the first surface. A method for manufacturing the housed loudspeaker array is also disclosed.

Abstract: A semiconductor device includes a first semiconductor layer which is formed above a substrate, a Schottky electrode and an ohmic electrode which are formed on the first semiconductor layer to be spaced from each other and a second semiconductor layer which is formed to cover the first semiconductor layer with the Schottky electrode and the ohmic electrode exposed. The second semiconductor layer has a larger band gap than that of the first semiconductor layer.

Abstract: A thin film transistor according to an example embodiment includes: a substrate body; a semiconductor layer formed on the substrate body and comprising a polycrystalline silicon film having a surface resistance from about 2000 ohm/sq to about 8000 ohm/sq; and a source electrode and a drain electrode each contacted with the semiconductor layer and comprising a metallic material having a resistance from about 350 to about 2000 ohm.

Abstract: According to one embodiment, an acoustic semiconductor device includes an element unit, and a first terminal. The element unit includes an acoustic resonance unit. The acoustic resonance unit includes a semiconductor crystal. An acoustic standing wave is excitable in the acoustic resonance unit and is configured to be synchronously coupled with electric charge density within at least one portion of the semiconductor crystal via deformation-potential coupling effect. The first terminal is electrically connected to the element unit. At least one selected from outputting and inputting an electrical signal is implementable via the first terminal. The electrical signal is coupled with the electric charge density. The outputting the electrical signal is from the acoustic resonance unit, and the inputting the electrical signal is into the acoustic resonance unit.

Abstract: Embodiments of a semiconductor structure include a first current electrode region, a second current electrode region, and a channel region. The channel region is located between the first current electrode region and the second current electrode region, and the channel region is located in a fin structure of the semiconductor structure. A carrier transport in the channel region is generally in a horizontal direction between the first current electrode region and the second current electrode region. A contact extends into the first current electrode region and is electrically coupled to the first current electrode region.

Abstract: A device for storing embedded charge includes a first insulator and at least one second insulator. The first insulator has at least two outer surfaces and has a band gap of less than about 5.5 eV. The second insulator is deposited on at least each of the at least two outer surfaces of the first insulator to form at least one interface for storing charge between the first and second insulators. The second insulator has a band gap of more than about 6.0 eV.

Abstract: This invention is an acoustic device protected by an acoustically transparent low water permeability encapsulant made from an acoustically clear polymer such as polyurethane. High aspect ratio clay nanoparticles are positioned in the substrate in overlapping layers with layers of the substrate interposed. The invention also provides a method for forming an acoustically transparent low permeability encapsulant about an acoustic device. The method includes treating high aspect ration clay nanoparticles to make them organophilic. The treated nanoparticles are then mixed in a polymer resin in such a way as to form an intercalated mixture. A curing agent is added to the mixture, and the mixture is allowed to set. When set the resulting intercalated mixture produces an acoustically clear, low permeability polymer coating.

Abstract: An improved semiconductor apparatus that comprises an elongated structure that extends into the substrate. The apparatus comprises a collection contact, a resistive path, a bias connection that creates along the length of the elongated structure, an electric field component that drives signal charge carriers in a direction perpendicular to the elongated structure, and a second bias that generates a current flow that creates within the substrate a constant electric field component to drive signal charge carriers towards the collection contact on the first surface.

Abstract: A nitride-based semiconductor light emitting device with improved characteristics of ohmic contact to an n-electrode and a method of fabricating the same are provided. The nitride-based semiconductor light emitting device includes an n-electrode, a p-electrode, an n-type compound semiconductor layer, and an active layer and a p-type compound semiconductor layer formed between the n- and p-electrodes. The n-electrode includes: a first electrode layer formed of at least one element selected from the group consisting of Pd, Pt, Ni, Co, Rh, Ir, Fe, Ru, Os, Cu, Ag, and Au; and a second electrode layer formed on the first electrode layer using a conductive material containing at least one element selected from the group consisting of Ti, V, Cr, Zr, Nb, Hf, Ta, Mo, W, Re, Ir, Al, In, Pb, Ni, Rh, Ru, Os, and Au.

Abstract: A microelectromechanical system microphone package structure includes a base plate and a plurality of chips is provided. The plurality of chips are disposed on the base plate, wherein an active area of each of the chips is disposed with a microelectromechanical system microphone structure, each of the active areas comprises a normal line, and the normal lines of the chips are unparallel and nonorthogonal to each other.

Abstract: A bulk GaN layer is on a first surface of a substrate, wherein the bulk GaN layer has a GaN transistor region and a bulk acoustic wave (BAW) device region. A source/drain layer is over a first surface of the bulk GaN layer in the GaN transistor region. A gate electrode is formed over the source/drain layer. A first BAW electrode is formed over the first surface of the bulk GaN layer in the BAW device region. An opening is formed in a second surface of the substrate, opposite the first surface of the substrate, which extends through the substrate and exposes a second surface of the bulk GaN layer, opposite the first surface of the bulk GaN layer. A second BAW electrode is formed within the opening over the second surface of the bulk GaN layer.

Abstract: A microelectromechanical system microphone structure including a substrate, a first device and at least one second device is provided. The first device is disposed on the substrate and including a first upper electrode and a first lower electrode disposed between the first upper electrode and the substrate. The second device is disposed on the substrate, surrounding the first device and including a second upper electrode and a second lower electrode disposed between the second upper electrode and the substrate. The second upper electrode includes a plurality of first conductive layers and first plugs. The first conductive layers are arranged in steps, and the first plug is disposed between the adjacent first conductive layers. The second lower electrode includes a plurality of second conductive layers and a plurality of second plugs. The second conductive layers are arranged in steps, and the second plug is disposed between the adjacent second conductive layers.

Abstract: A method of manufacturing a solid-state imaging device. Light-receiving sensor portions each constituting a pixel in the form of a matrix is arranged. The matrix has columns aligned in a vertical direction and rows aligned in a horizontal direction. Charge-transfer portions are formed on either side of the columns of said pixels. Transfer electrodes in said charge-transfer portions are formed to include a first transfer electrode formed of a first electrode layer and a second transfer electrode formed by electrically connecting the first electrode layer and a second electrode layer through a contact. The second transfer electrode being disposed in the vertical direction above the charge-transfer portion in a vicinity of the contact to decrease the width of the charge-transfer portions in the horizontal direction and increase the light receiving sensor portions in the vertical direction.

Abstract: An electronic device. The electronic device includes a first electrode and a coating layer. The electronic device is fabricated on a substrate; the substrate has a cavity created in a top surface of the substrate; and the first electrode is electrically coupled to the substrate. The coating layer coats at least part of a substrate surface in the cavity, and the presence of the coating layer results in a mitigation of at least one parasitic leakage path between the first electrode and an additional electrode fabricated on the substrate.

Abstract: An optical-based acoustic sensor system detects sound. An exemplary embodiment has a substrate with a surface and an internal region; a shell disposed above the substrate surface, the shell operable to receive incident light emitted by a light source; a beam disposed blow the shell; a photodiode on the substrate surface below the beam, and in response to receiving a first portion of light, the photodiode is operable to generate a charge that attracts the beam such that a motion is induced in the beam to cause the beam to resonate; and a microphone device coupled to the shell, the microphone device operable to detect acoustic waves, and operable to modulate the vibratory motion of the beam, wherein a second portion of light is modulated by the vibratory motion of the beam to generate sound-modulated light that is emitted from the sensor.

Abstract: Provided is an electrode patterning layer used for forming an electrode pattern of any optional shape depending on the difference in wettability with an electrode-forming solution, the electrode patterning layer employing a polyimide type resin which is highly reliable as an electronic material. The electrode patterning layer is prepared by irradiating a layer comprising a polyamic acid having repeating units at the formula (1) or a polyimide obtainable by cyclodehydration of such a polyamic acid, with ultraviolet ray in a pattern shape: wherein A is a tetravalent organic group, B is a bivalent organic group, each of A and B may be of a single type or plural types, and n is a positive integer, provided that at least one type of A is a tetravalent organic group having an alicyclic structure.

Abstract: A phase change memory including at least a storage cell which includes a first electrode, an electrically conductive portion provided on the first electrode and having at least two electrically conductive bodies with approximately the same shape provided on the first electrode, the electrically conductive bodies being spaced by a high resistance film with a high resistance, a recording layer provided on the electrically conductive portion and having phase change material which can change between a first phase state with a first specific resistance and a second phase state with a second specific resistance different from the first specific resistance, and a second electrode provided on the recording layer.

Abstract: A device includes: a first electrical contact; a second electrical contact; a semiconducting or semimetallic organic layer disposed at least partially between the first and second electrical contacts; and a tunneling barrier layer disposed at least partially between the semiconducting or semimetallic organic layer and the first electrical contact. The tunneling barrier layer has a thickness effective to enable flow of an electrical current through the tunneling barrier layer responsive to an operative electrical bias applied across the first and second electrical contacts, the electrical current exhibiting negative differential resistance for at least some applied electrical bias values. Circuits are also disclosed that utilize one or more negative differential resistance polymer diodes to implement logic, memory, or mixed signal applications.

Abstract: A phase change memory cell has a first electrode, a heater, a phase change material, and a second electrode. The heater is over the first electrode, and the heater includes a pillar. The phase change material is around the heater. The second electrode is electrically coupled to the phase change material. In some embodiments, a method includes forming a electrode layer over a substrate, depositing a first layer, providing nanoclusters over the first layer, and etching the first layer. The first layer comprises one of a group consisting of a heater material and a phase change material. The first layer may be etched using the nanocluster defined pattern to form pillars from the first layer.

Abstract: According to an aspect of the invention, there is provided a nonvolatile ferroelectric memory, including a ferroelectric capacitor composed of a ferroelectric film sandwiched by capacitor electrodes made of a conductive material, a cell capacitor block stacked a plurality of the capacitor electrodes and the ferroelectric film of the ferroelectric capacitor perpendicular to a main surface of a silicon substrate in layer, a cell transistor having a drain electrode and a source electrode, the drain electrode and the source electrode are electrically connected to the ferroelectric capacitor in parallel, a memory cell composed of the ferroelectric capacitor and the cell transistor, a cell block having the plurality of memory cells electrically connected in series, the drain electrode and the source electrode being as a terminals, a word line, a bit line connected to one end of the cell block, the bit line being arranged along orthogonal direction to the word line and a plate line connected to the other end of the

Abstract: A solid image pick-up element comprises: a photoelectric converting portion; a charge transmitting portion comprising a charge transmitting electrode that transmits a charge generated by the photoelectric converting portion; and a peripheral circuit portion connected to the charge transmitting portion, wherein a surface level of a field oxide film provided at the peripheral circuit portion and the charge transmitting portion to surround an effective image pick-up region of the photoelectric converting portion is to a degree the same as a surface level of the photoelectric converting portion.

Abstract: A method of forming a memory cell comprises forming a stack comprising a first electrode, an insulating layer over the first electrode, and a second electrode over the insulating layer, with a side wall on the stack. A side wall spacer comprising a programmable resistive material in electrical communication with the first and second electrodes is formed. The side wall spacer is formed by depositing a layer of programmable resistive material over the side wall of the stack, anisotropically etching the layer of programmable resistive material to remove it in areas away from the side wall, and selectively etching the programmable resistive material according to a pattern to define the width of the side wall spacer. In embodiments described herein, the width is about 40 nanometers or less.

Abstract: Methods of producing electrochemical transistor devices are provided, wherein a solidified electrolyte is arranged in direct contact with at least a portion of an organic material having the ability to electrochemically altering its electrical conductivity through change of redox state thereof, such that a current between a source contact and a drain contact of the transistor is controllable by a voltage applied to a gate electrode. A electrochemical transistor device is also provided, wherein an ion isolative material is provided between a solidified electrolyte and an organic material having the ability to electrochemically altering its redox state, such that a transistor channel of said transistor is defined thereby.

Abstract: The diffusion structures in CMOS devices can be changed to minimize the effects of IR drop on those devices. A simulation can be run before tape-off to determine which transistors are at risk. The area of the source region and/or the width of the drain region of the at-risk transistor(s) can be adjusted to change the capacitive and/or resistive capability of the transistor(s). These altered diffusion structures can reduce the peak IR drop value, such as by an amount in the range of 8%-30% of the original peak noise, to prevent the chip from malfunctioning due to the resultant noise. The reduction in IR drop can be balanced with the timing delays introduced by the increased capacitance of the source area. An optimal combination of source area and drain width can be obtained and instituted during the simulation and testing processes.

Abstract: An electronic device. The electronic device includes a first electrode and a coating layer. The electronic device is fabricated on a substrate; the substrate has a cavity created in a top surface of the substrate; and the first electrode is electrically coupled to the substrate. The coating layer coats at least part of a substrate surface in the cavity, and the presence of the coating layer results in a mitigation of at least one parasitic leakage path between the first electrode and an additional electrode fabricated on the substrate.

Abstract: A memory element comprising first and second electrodes is provided. The first electrode is tapered such that a first end of the first electrode is larger than a second end of the first electrode. A resistance variable material layer is located between the first and second electrodes, and the second end of the first electrode is in contact with the resistance variable material. Methods for forming the memory element are also provided.

Abstract: A circuit device is provided which can be manufactured at reduced costs and which is highly reliable. The circuit device includes a Sensor area formed on part of a semiconductor substrate, a circuit area formed around the sensor area on the semiconductor substrate to process electric signals produced at the sensor area, and a sealring disposed between the sensor area and the circuit area. The sealring is disposed between the outer periphery of the sensor area and the inner periphery of the circuit area to surround the sensor area. In the circuit device, the sealring prevents water or moisture from infiltrating from the sensor area into the circuit area.

Abstract: A method of forming an opening through a substrate having a first side and a second side opposite the first side includes forming spaced etch stops in the first side of the substrate, etching into the substrate from the second side toward the first side to the spaced etch stops, and etching into the substrate between the spaced etch stops from the second side. Etching into the substrate to the spaced etch stops includes forming a first portion of the opening and etching into the substrate between the spaced etch stops includes forming a second portion of the opening.

Abstract: An active gate includes a substrate of a first conductivity type, a channel of a second conductivity type formed in the substrate, a first gate region of the first conductivity type formed in a corresponding first portion of the channel, and a first contact connected to the first gate region. The first gate region covers a first area, and the first contact covers a fraction of the first area. A pixel or register element includes an active gate, a second gate region of the first conductivity type formed in a corresponding second portion of the channel, and a second contact connected to the second gate region. The second gate region covers a second area and is spaced by a first gap from the first gate region. The second contact covers a fraction of the second area. The pixel or register element further includes a first gate electrode insulatively spaced from and disposed over the first gap.

Abstract: According to an aspect of the invention, there is provided a method for fabricating a semiconductor device. The method may include forming at least one interconnection layer having a low dielectric constant insulating film and an interconnection buried in the low dielectric constant insulating film, forming a trench or a hole extending in the interconnection layer, performing heat treatment for the interconnection layer having the trench or the hole, and burying a material in the trench or the hole.

Abstract: A method of precluding diffusion of a metal into adjacent chalcogenide material upon exposure to a quanta of actinic energy capable of causing diffusion of the metal into the chalcogenide material includes forming an actinic energy blocking material layer over the metal to a thickness of no greater than 500 Angstroms and subsequently exposing the actinic energy blocking material layer to said quanta of actinic energy. In one implementation, an homogenous actinic energy blocking material layer is formed over the metal and subsequently exposed to said quanta of actinic energy. A method of forming a non-volatile resistance variable device includes providing conductive electrode material over chalcogenide material having metal ions diffused therein.

Abstract: Provided is a field emission device having a mesh gate. The object of this research is to provide a field emission display (FED) using a triode field emission device for preventing increase of operation voltage, and securing high concentration of electron beams. The operation properties of the FED is different based on a structure of an extraction electrode. In this research, the extraction electrode is formed on the electron emitting source and it has a plurality of openings corresponding to the locations of carbon nanotube mixture. The concentration of the electron beams is raised and leakage current is suppressed by using an insulating mesh gate plate. The upper part of the openings has a smaller diagram than the lower part. The high concentration of electron beams and little leakage current can be generated by adding auxiliary electrodes or optimizing the shape of electrodes.

Abstract: A method of precluding diffusion of a metal into adjacent chalcogenide material upon exposure to a quanta of actinic energy capable of causing diffusion of the metal into the chalcogenide material includes forming an actinic energy blocking material layer over the metal to a thickness of no greater than 500 Angstroms and subsequently exposing the actinic energy blocking material layer to said quanta of actinic energy. In one implementation, an homogenous actinic energy blocking material layer is formed over the metal and subsequently exposed to said quanta of actinic energy. A method of forming a non-volatile resistance variable device includes providing conductive electrode material over chalcogenide material having metal ions diffused therein.

Abstract: A semiconductor device capable of reducing manufacturing cost and on-state resistance is provided by selectively disposing a plurality of active regions (AR) on a main surface of a stainless steel substrate (1) and disposing a trench gate (7) so as to bury the area between the active regions (AR). The active regions (AR) have a multilayer structure that is made up of a drain layer (2) containing antimony (Sb) as an n-type impurity in a relatively high concentration (n+), a polysilicon layer (3) overlying the drain layer (2) and containing a p-type impurity, and a source layer (4) overlying the polysilicon layer (3) and containing an n-type impurity in a relatively high concentration (n+).

Abstract: A ferroelectric memory device of the present invention includes a memory cell array in which memory cells are arranged in a matrix having first signal electrodes, second signal electrodes arranged in a direction intersecting the first signal electrodes, and a ferroelectric layer disposed at least in intersection regions between the first signal electrodes and the second signal electrodes, and a peripheral circuit section for selectively writing information into or reading information from the memory cell. The memory cell array and the peripheral circuit section are formed in different layers. The peripheral circuit section is formed in a region outside the memory cell array.

Abstract: A ferroelectric transistor suitable as a memory element has a first gate intermediate layer and a first gate electrode disposed on the surface of a semiconductor substrate and disposed between source/drain regions. The first gate intermediate layer contains at least one ferroelectric layer. In addition to the first gate intermediate layer, a second gate intermediate layer and a second gate electrode are configured between the source/drain regions. The second gate intermediate layer contains a dielectric layer. The first gate electrode and the second gate electrode are connected to each other via a diode structure.