Abstract: A signal conversion circuit and a signal readout circuit are provided. The signal conversion circuit includes: an input switched capacitor, one end receiving an electric signal output by a sensing array, and the other end being coupled to an input end of an operational amplifier; a feedback switched capacitor, one end being coupled to the input end of the operational amplifier, and the other end being coupled to an output end of the operational amplifier; an input switch controlling the input switched capacitor to access the signal conversion circuit or not; and a feedback switch controlling the feedback switched capacitor to access the signal conversion circuit or not, wherein the electric signal output by the sensing array comprises a charge signal, a current signal or a voltage signal, and equivalent impedance of the input switched capacitor and the feedback switched capacitor is related to output characteristics of the sensing array.

Abstract: The present disclosure relates to an image pickup device and an electronic apparatus that enable warping of a substrate to be suppressed. A first structural body including a pixel array unit is layered with a second structural body including an input/output circuit unit and outputting a pixel signal output from the pixel to the outside of the device, and a signal processing circuit; and a signal output external terminal and a signal input external terminal are arranged below the pixel array unit, the signal output external terminal being connected to the outside via a first through-via penetrating through a semiconductor substrate in the second structural body, the signal input external terminal being connected to the outside via a second through-via connected to an input circuit unit and penetrating through the semiconductor substrate.

Abstract: A thin-film transistor substrate includes a thin-film transistor and a light-shielding part. The thin-film transistor includes a gate electrode, a semiconductor part made from a semiconductor material and superimposed on a part of the gate electrode via a first insulating film, a source electrode on a part of the semiconductor part and connected to the semiconductor part, and a drain electrode on a part of the semiconductor part and connected to the semiconductor part with spaced apart from the source electrode. The light-shielding part includes a first light-shielding section disposed above the semiconductor part, the source electrode, and the drain electrode via the second insulating film and superimposed on the semiconductor part, and a second light-shielding section not to be superimposed on the gate electrode, the source electrode, and the drain electrode and having an opening adjacent to the thin-film transistor.

Abstract: An image sensor includes a pixel group comprising a plurality of photodiodes configured to produce photocharges produced in response to light incident on the plurality of photodiodes, a floating diffusion region configured to receive and accumulate the photocharges produced by the plurality of photodiodes, a plurality of transfer transistors coupled to the plurality of photodiodes, respectively, each of the plurality of transfer transistors configured to transfer the photocharges produced by the corresponding photodiode, and a common transfer transistor coupled between the plurality of transfer transistors and the floating diffusion region and configured to transfer the photocharges produced by the plurality of photodiodes to the floating diffusion region.

Abstract: A semiconductor device includes a semiconductor chip body having a surface on which a chip pad is disposed, a passivation layer covering the surface of the semiconductor chip body and providing a tapered hole revealing the chip pad, and a redistributed layer (RDL) structure disposed on the passivation layer. The RDL structure includes a first RDL interconnection portion spaced apart from the tapered hole and passing by the tapered hole and a second RDL overlapping pad portion configured to have a bottom portion contacting the revealed chip pad and configured to have a first side surface facing a side surface of the first RDL interconnection portion. A central portion of the first side surface of the second RDL overlapping pad portion extends toward the side surface of the first RDL interconnection portion such that the first side surface is curved.

Abstract: A multi-level semiconductor device, the device including: a first level including integrated circuits; a second level including an electromagnetic waveguide, where the second level is disposed above the first level, where the first level includes crystalline silicon; and an oxide layer disposed between the first level and the second level, where the second level is bonded to the oxide layer, and where the bonded includes oxide to oxide bonds.

Abstract: The present disclosure relates to a solid-state image pickup element in order to enable inhibition of a variation in the photoelectric conversion characteristic of an organic photoelectric conversion film due to atmospheric exposure and a manufacturing method of the solid-state image pickup element, and an electronic device. The solid-state image pickup element includes: a photoelectric conversion film formed above a semiconductor substrate; and a sidewall sealing a side face of the photoelectric conversion film. The sidewall includes a re-deposited film of a film directly under the sidewall. The present disclosure is applicable to, for example, a CMOS image sensor or the like.

Abstract: An image sensing device is disclosed. The image sensing device includes a semiconductor substrate including an active region, a first impurity region and a second impurity region formed in the active region, a photoelectric conversion region disposed over the semiconductor substrate to be directly coupled to the first impurity region and configured to generate photocharges in response to incident light and transmit the generated photocharges to the first impurity region, a switching element disposed coupled to the first impurity region and the second impurity region and configured to transmit the photocharges stored in the first impurity region to the second impurity region, an insulation structure disposed on sides of the photoelectric conversion region and a plurality of conductive lines disposed in the insulation structure and configured to read out an electrical image signal corresponding to the photocharges generated by the photoelectric conversion region.

Abstract: A surveillance system includes an infrared sensor system coupled to output an infrared signal in response to receiving infrared light, and an audio recording system coupled to output an audio signal in response to recording sound. An image sensor is system coupled to output an image signal in response to receiving image light. A controller is coupled to the infrared sensor system, the audio recording system, and the image sensor system. The controller includes logic that when executed by the controller causes the surveillance system to perform operations including receiving the infrared signal from the infrared sensor system, activating the audio recording system to record the sound, and activating the image sensor system to output the image signal.

Abstract: An image sensor includes a two-dimensional array of image sensor pixels, which are formed in a semiconductor layer. Each image sensor pixel is formed in a substrate having a corresponding semiconductor region therein. Each semiconductor region contains at least first and second photoelectric conversion elements, which are disposed at side-by-side locations therein. An electrically insulating isolation region is also provided, which extends at least partially through the semiconductor region and at least partially between the first and second photoelectric conversion elements, which may be configured respectively as first and second semiconductor regions of first conductivity type (e.g., N-type). At least one optically reflective region is also provided, which extends at least partially through the semiconductor region and surrounds at least a portion of at least one of the first and second photoelectric conversion elements. A semiconductor floating diffusion (FD) region (e.g.

Abstract: A multi-level semiconductor device, the device including: a first level including integrated circuits; a second level including an optical waveguide, where the second level is disposed above the first level, where the first level includes crystalline silicon; and an oxide layer disposed between the first level and the second level, where the second level is bonded to the oxide layer, and where the bonded includes oxide to oxide bonds.

Abstract: A photoelectric conversion apparatus includes a semiconductor layer including a photoelectric conversion portion, a charge holding portion configured to hold electric charge generated from the photoelectric conversion portion, and a charge detection portion to which the electric charge held by the charge holding portion is transferred. A gate electrode of a transistor and a light shielding film including a first portion covering the charge holding portion and a second portion covering an upper surface of the gate electrode are disposed above the semiconductor layer. The distance between the second portion of the light shielding film and the upper surface of the gate electrode is greater than the distance between the first portion of the light shielding film and the semiconductor layer.

Abstract: An array substrate, a liquid crystal display panel and a display device are provided. The array substrate includes: a substrate; a common electrode and a gate electrode, both disposed on the substrate; and a shielding electrode, disposed on the common electrode and the gate electrode, wherein an orthographic projection of the shielding electrode on the substrate is overlapped with an orthographic projection of the gate electrode on the substrate as well as an orthographic projection of the common electrode on the substrate, and the shielding electrode is electrically connected to the common electrode. In the embodiment of the disclosure, the shielding electrode is disposed on the common electrode and the gate electrode, so that the influence of the voltage difference formed by the gate electrode and the common electrode can be effectively shielded, thereby eliminating the phenomenon of push mura.

Abstract: A solid state imaging apparatus includes an insulation structure formed of an insulation substance penetrating through at least a silicon layer at a light receiving surface side, the insulation structure having a forward tapered shape where a top diameter at an upper portion of the light receiving surface side of the silicon layer is greater than a bottom diameter at a bottom portion of the silicon layer. Also, there are provided a method of producing the solid state imaging apparatus and an electronic device including the solid state imaging apparatus.

Abstract: A display device includes: a substrate; a semiconductor layer of a transistor, on the substrate; a gate electrode of the transistor on the semiconductor layer; and a conductive layer element corresponding to the transistor. The conductive layer element is both electrically connected to a constant voltage source and contacts the substrate.

Abstract: An image sensor pixel array comprises a plurality of image pixel units to gather image information and a plurality of phase detection auto-focus (PDAF) pixel units to gather phase information. Each of the PDAF pixel units includes two of first image sensor pixels covered by a shared micro-lens. Each of the image pixel units includes four of second image sensor pixels adjacent to each other, wherein each of the second image sensor pixels is covered by an individual micro-lens. A coating layer is disposed on the micro-lenses and forms a flattened surface across the whole image sensor pixel array to receive incident light.

Abstract: Certain example embodiments relate to an installation structure of a biometric sensor synchronized with a display and a control method thereof. The electronic device may include: a light emitting circuitry configured to output light including a predetermined frequency band; a display panel configured to display an image by using one or more pixels, wherein the one or more pixels includes a plurality of sub-pixels; at least one driver circuit configured to drive at least one pixel among the plurality of sub-pixels; and an optical shielding layer formed adjacent to the at least one driver circuit in order to protect the at least one driver circuit from the light including a predetermined frequency band. Various embodiments can be implemented.

Abstract: An example image sensor structure includes an image layer. The image layer includes an array of light detectors disposed therein. A device stack is disposed over the image layer. An array of light guides is disposed in the device stack. Each light guide is associated with at least one light detector of the array of light detectors. A passivation stack is disposed over the device stack. The passivation stack includes a bottom surface in direct contact with a top surface of the light guides. An array of nanowells is disposed in a top layer of the passivation stack. Each nanowell is associated with a light guide of the array of light guides. A crosstalk blocking metal structure is disposed in the passivation stack. The crosstalk blocking metal structure reduces crosstalk within the passivation stack.

Abstract: The present disclosure relates to a solid-state image pickup device and a method for manufacturing the same, and an electronic apparatus, capable of suppressing color mixture, stray light, reduction in contour resolution, and the like.

Abstract: A method of manufacturing a semiconductor apparatus, includes forming a first trench on a side of a first face of a semiconductor substrate having the first face and a second face, forming a gettering region by implanting ions in the semiconductor substrate through the first trench, and forming a second trench on the side of the first face of the semiconductor substrate after the forming the gettering region. A depth of a bottom surface of the second trench with reference to the first face is smaller than a depth of a bottom surface of the first trench with reference to the first face.

Abstract: An apparatus includes a solid-state imaging element including a first pixel and a second pixel, the first pixel being higher in sensitivity than the second pixel in a first wavelength range of visible light, the second pixel being higher in sensitivity than the first pixel in a second wavelength range of visible light, and further the first pixel being higher in sensitivity than the second pixel in a wavelength range of near-infrared light, a first cut filter provided on a light entry side of the solid-state imaging element and configured to cut visible light, and at least one processor or circuit configured to generate an image from pixel signals acquired by the solid-state imaging element, wherein the at least one processor or circuit determines a pixel signal to be used for generating the image, according to brightness of an object.

Abstract: A 3D micro display, the 3D micro display including: a first single crystal layer including at least one LED driving circuit; a second single crystal layer including a first plurality of light emitting diodes (LEDs), where the second single crystal layer is on top of the first single crystal layer, where the second single crystal layer includes at least ten individual first LED pixels; and a second plurality of light emitting diodes (LEDs), where the 3D micro display includes an oxide to oxide bonding structure.

Abstract: The present disclosure provides an array substrate, a driving method thereof and a display panel. The array substrate includes: a plurality of pixels arranged in a matrix, wherein two adjacent rows of pixels are grouped into a pixel group; switching elements respectively connected with the pixels; a data line, wherein two data lines corresponds to each column of pixels arranged at two sides of this column respectively; and gate lines each located between two adjacent rows of pixels of each pixel group; wherein respective pixels in a same pixel group are connected with one gate line located between two rows of pixels though respective switching elements; two pixels adjacent to each other along a column direction in a same pixel group are respectively connected with two data lines respectively located at two sides of a column where the two pixels are located through respective switching elements.

Abstract: An image sensor is provided, the image sensor including: an imaging unit that has a first imaging region and a second imaging region, and outputs: a first pixel signal generated according to light incident on the first imaging region; and a second pixel signal generated according to light incident on the second imaging region; a first ramp generating unit that generates a first ramp signal; a second ramp generating unit that generates a second ramp signal; a first signal converting unit that converts the first pixel signal into a first digital image signal based on a result of comparison between the first pixel signal and the first ramp signal; and a second signal converting unit that converts the second pixel signal into a second digital image signal based on a result of comparison between the second pixel signal and the second ramp signal.

Abstract: The present disclosure relates to a CMOS image sensor, and an associated method of formation. In some embodiments, the CMOS image sensor comprises a floating diffusion region disposed at one side of a transfer gate within a substrate and a photo detecting column disposed at the other side of the transfer gate opposing to the floating diffusion region within the substrate. The photo detecting column comprises a doped sensing layer with a doping type opposite to that of the substrate. The photo detecting column and the substrate are in contact with each other at a junction interface comprising one or more recessed portions. By forming the junction interface with recessed portions, the junction interface is enlarged compared to a previous p-n junction interface without recessed portions, and thus a full well capacity of the photodiode structure is improved.

Abstract: A substrate (100) includes a resin material. A first stacked film (210) is configured by laminating multiple layers and is formed on a first surface (102) of the substrate (100). A light-emitting unit (140) is formed over the first stacked film (210) and includes an organic layer. A second stacked film (220) is configured by laminating multiple layers and covers the light-emitting unit (140). A third stacked film (310) is configured by laminating multiple layers and is formed on a second surface (104) of the substrate (100). The third stacked film (310) is the same stacked film as the first stacked film (210), and the fourth stacked film (320) is the same stacked film as the second stacked film (220).

Abstract: A semiconductor device structure is provided. The semiconductor device structure has a first surface and a second surface. A first charged layer is disposed over the second surface. A dielectric layer separates a surface of the first charged layer that is closest to the semiconductor substrate from the second surface of the semiconductor substrate. A second charged layer is over the first charged layer. The first charged layer and the second charged layer are different materials and have a same charge polarity.

Abstract: A light receiving device includes a protective layer between first and second electrodes, a first semiconductor layer between the protective layer and the first electrode, the first semiconductor layer having first and second protruding portions, an insulating material between the first and second protruding portions and extending between the protective layer and the first semiconductor layer, a second semiconductor layer between the first protruding portion and the protective layer and between the first protruding portion and the insulating material, a third semiconductor layer between the second semiconductor layer and the protective layer and between the second semiconductor layer and the insulating material, a fourth semiconductor layer between the second protruding portion and the protective layer and between the second protruding portion and the insulating material, and a fifth semiconductor layer between the fourth semiconductor layer and the protective layer and between the fourth semiconductor layer

Abstract: Optoelectronic devices that use very thin single-crystalline inorganic semiconductor films as phonon-absorbing layers in combination with non-lattice optical cavities are provided.

Abstract: A solid state imaging apparatus includes an insulation structure formed of an insulation substance penetrating through at least a silicon layer at a light receiving surface side, the insulation structure having a forward tapered shape where a top diameter at an upper portion of the light receiving surface side of the silicon layer is greater than a bottom diameter at a bottom portion of the silicon layer. Also, there are provided a method of producing the solid state imaging apparatus and an electronic device including the solid state imaging apparatus.

Abstract: A system and method for forming pixels in an image sensor is provided. In an embodiment, a semiconductor device includes an image sensor including a first pixel region and a second pixel region in a substrate, the first pixel region being adjacent to the second pixel region. A first anti-reflection coating is over the first pixel region, the first anti-reflection coating reducing reflection for a first wavelength range of incident light. A second anti-reflection coating is over the second pixel region, the second anti-reflection coating reducing reflection for a second wavelength range of incident light that is different from the first wavelength range.

Abstract: There is provided a light receiving element including; an on-chip lens; a wiring layer; and a semiconductor layer disposed between the on-chip lens and the wiring layer. The semiconductor layer includes a first voltage applying unit to which a first voltage is applied, a second voltage applying unit to which a second voltage different from the first voltage is applied, a first charge detection unit disposed in a vicinity of the first voltage applying unit, and a second charge detection unit disposed in a vicinity of the second voltage applying unit, and the wiring layer includes a reflection suppressing structure that suppresses reflection of light in a plane region corresponding to the first charge detection unit and the second charge detection unit.

Abstract: An image sensor and a method of manufacturing the image sensor are provided. The image sensor includes: a substrate comprising a pixel area, a first side, and a second side opposite to the first side, wherein the pixel area includes pixels and light is incident to the second side; a photodiode arranged in each of the pixels of the substrate; a pixel separation structure arranged in the substrate to separate the pixels from each other and including a conductive layer therein; and a voltage-applying wire layer spaced apart from the conductive layer and arranged to surround at least a portion of an outer portion of the pixel area. The conductive layer has a mesh structure that is a single unitary structure, and the voltage-applying wire layer is electrically connected to the conductive layer through at least one contact.

Abstract: An imaging device including a semiconductor substrate; and a pixel. The pixel includes a photoelectric converter having a first electrode, a second electrode and a photoelectric conversion layer sandwiched between the first electrode and the second electrode, the photoelectric converter located above a surface of the semiconductor substrate; a first transistor that includes a part of the semiconductor substrate and detects electric charges; and a second transistor that includes a gate electrode and initializes a voltage of the first electrode. The first electrode, the second transistor, and the first transistor are arranged in that order toward the semiconductor substrate from the first electrode in cross sectional view, and when viewed from the direction normal to the surface of the semiconductor substrate, a part of the gate electrode overlaps the first electrode, and another part of the gate electrode does not overlap the first electrode.

Abstract: A photoelectric conversion device of an embodiment of the technology includes: a first electrode and a second electrode facing each other; a photoelectric conversion layer provided between the first electrode and the second electrode; and a buffer layer provided between the first electrode and the photoelectric conversion layer, and having an interface, to which an organic molecule or a halogen element is coordinated, with the photoelectric conversion layer.

Abstract: An image sensing apparatus is provided. The apparatus comprises pixels each including a photoelectric conversion element arranged in a semiconductor layer which has a first surface and a second surface and a wiring layer arranged below the first surface. Each of the pixels includes a first reflection film arranged below the first surface, an interlayer film arranged so as to cover the second surface, a second reflection film arranged inside the interlayer film and a microlens which is arranged above the interlayer film. An aperture is arranged in a portion, of the second reflection film, which overlaps the photoelectric conversion element. An area of the aperture is smaller than an area of the photoelectric conversion element, and each of the pixels further includes a deflecting portion configured to deflect light between the aperture and the second surface.

Abstract: A touch panel, a display apparatus, and a method of manufacturing the touch panel. The touch panel includes a substrate, sense patterns disposed on the substrate and including a mesh type metal grid, and a transparent conductive layer patterned to correspond to each of the sense patterns and disposed to cover the metal grid.

Abstract: The present technology relates to a solid-state imaging element configured so that pixels can be more reliably separated, a method for manufacturing the solid-state imaging element, and an electronic apparatus. The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object.

Abstract: An image sensor includes a two-dimensional array of image sensor pixels, which are formed in a semiconductor layer. Each image sensor pixel is formed in a substrate having a corresponding semiconductor region therein. Each semiconductor region contains at least first and second photoelectric conversion elements, which are disposed at side-by-side locations therein. An electrically insulating isolation region is also provided, which extends at least partially through the semiconductor region and at least partially between the first and second photoelectric conversion elements, which may be configured respectively as first and second semiconductor regions of first conductivity type (e.g., N-type). At least one optically reflective region is also provided, which extends at least partially through the semiconductor region and surrounds at least a portion of at least one of the first and second photoelectric conversion elements. A semiconductor floating diffusion (FD) region (e.g.

Abstract: The present disclosure relates to a solid-state imaging device, a manufacturing method thereof, and an electronic apparatus, in which both oblique light characteristics and sensitivity can be improved. The solid-state imaging device includes pixel array unit in which a plurality of pixels is two-dimensionally arranged in a matrix and multi-stage light shielding walls are provided between the pixels. The present disclosure is applicable to, for example, a back-illuminated type solid-state imaging device and the like.

Abstract: The disclosure provides an array substrate, a display panel and a display device, and the array substrate includes: an insulation substrate, gate lines arranged on the insulation substrate to extend in a first direction, and data lines arranged on the insulation substrate to extend in a second direction, and to be insulated from the gate lines, the gate lines intersect with the data lines to define a plurality of pixel areas, each pixel area has a larger length in the first direction than that in the second direction, where the array substrate further includes a plurality of common electrodes, and a projection of each of the plurality of common electrodes on the insulation substrate and a projection of each of the gate lines on the insulation substrate do not overlap with each other.

Abstract: A method of manufacturing a photoelectric conversion apparatus includes heating a semiconductor substrate while a pixel circuit area is covered with an insulator film, performing ion implantation into the pixel circuit area through the insulator film, performing ion implantation into a peripheral circuit area after the heating, and forming a side wall on a side surface of a gate electrode of a transistor after the performing ion implantation into the peripheral circuit area.

Abstract: A CMOS image sensor includes a substrate and at least one device isolation region in the substrate and defining first and second pixel regions and first and second active portions in each of the first and second pixel regions. A reset and select transistor gates are disposed in the first pixel region, while a source follower transistor gate is disposed in the second pixel region, such that pixels in the first and second pixel regions share the reset, select and source follower transistors. A length of the source follower transistor gate may be greater than lengths of the reset and selection transistor gates.

Abstract: A photoelectric conversion apparatus includes an element isolating portion that is disposed on a side of a front surface of a semiconductor layer and constituted by an insulator, and a pixel isolating portion. The pixel isolating portion includes a part that overlaps an isolating region in a normal direction. The semiconductor layer is continuous across semiconductor regions in an intermediate plane. The part is located between a semiconductor region and another semiconductor region.

Abstract: The present disclosure relates to a solid-state imaging device and electronic equipment that enable improvement of image quality of a captured image. In the solid-state imaging device, two or more photoelectric conversion layers including a photoelectric converter and a charge detector are laminated. The solid-state imaging device is configured to include a state in which light having entered one pixel of a first photoelectric conversion layer closer to an optical lens is received by the photoelectric converter of a plurality of pixels of the second photoelectric conversion layer farther from the optical lens. The technology of the present disclosure can be applied to, for example, a solid-state imaging device that performs imaging.

Abstract: An imaging element comprises a photoelectric conversion unit formed in a pixel region and configured to convert light into electrical charge. Further, the imaging element includes a transistor formed in the pixel region and configured to transfer electric charge from the photoelectric conversion unit. The photoelectric conversion unit of the imaging element may be connected to a well of the pixel region, where the well of the pixel region has a negative potential.

Abstract: A CMOS image sensor may include an active pixel sensor array including pixels, each including a photodiode and read circuitry coupled to the photodiode and including transistors defining a 4T cell arrangement. At least one of the transistors may include a first semiconductor layer and a superlattice on the first semiconductor layer including a plurality of stacked groups of layers, with each group including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The transistor(s) may also include a second semiconductor layer on the superlattice, spaced apart source and drain regions in the second semiconductor layer defining a channel therebetween, and a gate comprising a gate insulating layer on the second semiconductor layer and a gate electrode on the gate insulating layer.

Abstract: A device includes an image sensor chip having formed therein an elevated photodiode, and a device chip underlying and bonded to the image sensor chip. The device chip has a read out circuit electrically connected to the elevated photodiode.

Abstract: A first substrate includes a base material having transmissivity, a light-shielding body having a grid pattern in a plan view seen from a thickness direction of the base material, a pixel electrode, a first insulator having transmissivity that overlaps the light-shielding body in the plan view and is disposed between the base material and the pixel electrode, and a second insulator having transmissivity that overlaps the pixel electrode in the plan view and is disposed in contact with the first insulator between the base material and the pixel electrode. The second insulator has a refractive index greater than a refractive index of the first insulator. An interface between the second insulator and the first insulator has an inclined portion inclined away from a central axis along a thickness direction of the second insulator from the incident side of light toward an emitting side.

Abstract: A solid state imaging apparatus includes an insulation structure formed of an insulation substance penetrating through at least a silicon layer at a light receiving surface side, the insulation structure having a forward tapered shape where a top diameter at an upper portion of the light receiving surface side of the silicon layer is greater than a bottom diameter at a bottom portion of the silicon layer. Also, there are provided a method of producing the solid state imaging apparatus and an electronic device including the solid state imaging apparatus.