Photodiodes Accessed By Fets Patents (Class 257/292)
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Patent number: 9923023Abstract: At least one of a passivation film extending from a pixel circuit region to a peripheral circuit region and a member disposed between a semiconductor layer and the passivation film in the peripheral circuit region contains hydrogen. The passivation film in the peripheral circuit region has a portion overlapping one conductive line of the plurality of conductive lines in a direction perpendicular to a main surface of the semiconductor layer, the one conductive line being closest to the passivation film among the plurality of conductive lines. The passivation film in the peripheral circuit region has a through-hole, the through-hole including a portion not overlapping the one conductive line in the direction perpendicular to the main surface of the semiconductor layer.Type: GrantFiled: May 17, 2016Date of Patent: March 20, 2018Assignee: Canon Kabushiki KaishaInventors: Hideaki Ishino, Nobuhiko Sato
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Patent number: 9923636Abstract: Disclosed embodiments relate to an interconnect structure for coupling at least one electronic unit for outputting and/or receiving electric signals, and at least one optical unit for converting said electric signals into optical signals and/or vice versa, to a further electronic component. The interconnect structure comprises an electrically insulating substrate and a plurality of signal lead pairs to be coupled between said electronic unit and a front end contact region for electrically contacting said interconnect structure by said further electronic component.Type: GrantFiled: January 10, 2017Date of Patent: March 20, 2018Assignee: Finisar CorporationInventors: Andrei Kaikkonen, Lennart Lundquist, Lars-Goete Svensson, Robert Smith
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Patent number: 9917121Abstract: A backside illumination (BSI) image sensor and a method of forming the same are provided. A method includes forming a plurality of photosensitive pixels in a substrate, the substrate having a first surface and a second surface, the second surface being opposite the first surface, the substrate having one or more active devices on the first surface. A first portion of the second surface is protected. A second portion of the second surface is patterned to form recesses in the substrate. An anti-reflective layer is formed on sidewalls of the recesses. A metal grid is formed over the second portion of the second surface, the anti-reflective layer being interposed between the substrate and the metal grid.Type: GrantFiled: March 24, 2016Date of Patent: March 13, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hung-Wen Hsu, Jiech-Fun Lu, Yeur-Luen Tu, U-Ting Chen, Shu-Ting Tsai, Hsiu-Yu Cheng
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Patent number: 9911779Abstract: Disclosed herein is a solid-state imaging device including: a laminated semiconductor chip configured to be obtained by bonding two or more semiconductor chip sections to each other and be obtained by bonding at least a first semiconductor chip section in which a pixel array and a multilayer wiring layer are formed and a second semiconductor chip section in which a logic circuit and a multilayer wiring layer are formed to each other in such a manner that the multilayer wiring layers are opposed to each other and are electrically connected to each other; and a light blocking layer configured to be formed by an electrically-conductive film of the same layer as a layer of a connected interconnect of one or both of the first and second semiconductor chip sections near bonding between the first and second semiconductor chip sections. The solid-state imaging device is a back-illuminated solid-state imaging device.Type: GrantFiled: November 2, 2016Date of Patent: March 6, 2018Assignee: Sony CorporationInventor: Toshihiko Hayashi
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Patent number: 9905598Abstract: An image-capturing device which is capable of capturing high quality images and can be formed at a low cost is provided. The image-capturing device includes a first circuit including a first transistor and a second transistor, and a second circuit including a third transistor and a photodiode. The first transistor is provided on a first surface of a silicon substrate. The second transistor is provided over the first transistor. The photodiode is provided to the silicon substrate. The silicon substrate includes a second insulating layer surrounding a side surface of the photodiode. The first transistor is a p-channel transistor including an active region in the silicon substrate. The third transistor is an n-channel transistor including an oxide semiconductor layer as an active layer. A light-receiving surface of the photodiode is a surface of the silicon substrate opposite to the first surface.Type: GrantFiled: April 16, 2015Date of Patent: February 27, 2018Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Masayuki Sakakura, Yoshiyuki Kurokawa
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Patent number: 9905605Abstract: The present disclosure relates to an image sensor having autofocus function and associated methods. In some embodiments, the integrated circuit has a photodiode array with a plurality of photodiodes disposed within a semiconductor substrate and a composite grid overlying the photodiode array and having a first plurality of openings and a second plurality of openings extending vertically through the composite grid. The integrated circuit further has an image sensing pixel array with a plurality of color filters disposed in the first plurality of openings. The integrated circuit further has a phase detection pixel array having a plurality of phase detection components that are smaller than the plurality of color filters and that have a low refractive index (low-n) material with a refractive index (n) smaller than a refractive index of the plurality of color filters, wherein the phase detection components are disposed in the second plurality of openings.Type: GrantFiled: October 15, 2015Date of Patent: February 27, 2018Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wen-I Hsu, Dun-Nian Yaung, Feng-Chi Hung, Keng-Yu Chou
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Photoelectric conversion apparatus and image pickup system having photoelectric conversion apparatus
Patent number: 9897482Abstract: A photoelectric conversion apparatus according to one aspect of the present invention includes a first substrate including a photoelectric conversion region and a surrounding region, and a second substrate including a circuit for processing a signal from the photoelectric conversion region, and overlapping the first substrate. In this case, the circuit for processing a signal from the photoelectric conversion region includes a first circuit and a second circuit with a higher drive frequency than that of the first circuit. In an orthogonal projection, the second circuit is only provided in the photoelectric conversion region.Type: GrantFiled: September 2, 2015Date of Patent: February 20, 2018Assignee: CANON KABUSHIKI KAISHAInventors: Mineo Shimotsusa, Koichiro Iwata -
Patent number: 9887228Abstract: An image sensor includes a substrate, multiple pixel regions separately disposed in the substrate, and a pick up region including a doping region and a pick up plug obliquely disposed on the doping region and directly contacting the doping region.Type: GrantFiled: January 20, 2014Date of Patent: February 6, 2018Assignee: Himax Imaging, Inc.Inventors: Kihong Kim, Yu Hin Desmond Cheung
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Patent number: 9881952Abstract: A circuit includes a photodiode electrically coupled to a first node, the first node configured to be charged by a first power supply voltage. A second node is configured to be charged by a second power supply voltage lower than the first power supply voltage, a source follower transistor is electrically coupled between the second node and a column line, and a level shifter is electrically coupled between the first node and the second node.Type: GrantFiled: May 4, 2016Date of Patent: January 30, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yuichiro Yamashita, Po-Sheng Chou
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Patent number: 9876045Abstract: An image sensor including at least one pixel for collecting charge in its photodiode is provided. The image sensor comprises: a substrate having a first surface on a front side and a second surface on a back side, a photodetector formed in the silicon substrate and having a light-receiving surface on the second surface, and a first layer with positive charges disposed on the second surface, the first layer being configured to form an electron accumulation region at the light-receiving surface of the photodetector for suppressing a dark current at a back side interface of the image sensor. A method for fabricating an image sensor including a first layer with positive charges is also provided.Type: GrantFiled: April 20, 2016Date of Patent: January 23, 2018Assignee: CISTA SYSTEM CORP.Inventors: Hirofumi Komori, Jingyi Bai
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Patent number: 9868884Abstract: An adhesive composition comprising (a) an acrylic polymer having a weight-average molecular weight of 100000 or more, (b) a compound having at least two (meth)acryloyl groups and (c) a polymerization initiator, in which a structural unit having a nitrogen atom-containing group in the (a) acrylic polymer having a weight-average molecular weight of 100000 or more accounts for 5 mass % or less based on the total amount of the (a) acrylic polymer having a weight-average molecular weight of 100000 or more; and the (a) acrylic polymer having a weight-average molecular weight of 100000 or more has a structural unit having a functional group.Type: GrantFiled: January 29, 2015Date of Patent: January 16, 2018Assignee: HITACHI CHEMICAL COMPANY, LTD.Inventors: Aya Ikeda, Sadaaki Katou, Shinjiro Fujii, Syougo Kikuchi, Shu Hashimoto
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Patent number: 9865643Abstract: The present technology relates to a solid-state image sensor, an imaging device, and electronic equipment configured such that an FD is shared by a plurality of pixels to further miniaturize the pixels at low cost without lowering of sensitivity and a conversion efficiency. In a configuration in which a plurality of pixels are arranged with respect to at least either of one of the OCCFs or one of the OCLs, a floating diffusion (FD) is shared by a sharing unit including a plurality of pixels, the plurality of pixels including pixels of at least either of different OCCFs or different OCLs. The present technology is applicable to a CMOS image sensor.Type: GrantFiled: June 22, 2017Date of Patent: January 9, 2018Assignee: Sony CorporationInventors: Nanako Kato, Toshifumi Wakano, Yusuke Tanaka, Yusuke Otake
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Patent number: 9865630Abstract: Embodiments of the present disclosure include an image sensor device and methods of forming the same. An embodiment is an image sensor device including a first plurality of pickup regions in a photosensor array area of a substrate, each of first plurality of pickup regions having a first width and a first length, a second plurality of pickup regions in a periphery area of the substrate, the periphery area along at least one side of the photosensor array area, each of second plurality of pickup regions having a second width and a second length.Type: GrantFiled: July 8, 2016Date of Patent: January 9, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Dun-Nian Yaung, Ching-Chun Wang, Feng-Chi Hung, Jeng-Shyan Lin, Yan-Chih Lu
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Patent number: 9859312Abstract: An image sensor includes a photodiode disposed in a first semiconductor material, and the photodiode is positioned to absorb image light through the backside of the first semiconductor material. A first floating diffusion is disposed proximate to the photodiode and coupled to receive image charge from the photodiode in response to a transfer signal applied to a transfer gate disposed between the photodiode and the first floating diffusion. A second semiconductor material, including a second floating diffusion, is disposed proximate to the frontside of the first semiconductor material. A dielectric material is disposed between the first semiconductor material and the second semiconductor material, and includes a first bonding via extending from the first floating diffusion to the second floating diffusion, a second bonding via disposed laterally proximate to the first bonding via, and a third bonding via disposed laterally proximate to the first bonding via.Type: GrantFiled: February 8, 2017Date of Patent: January 2, 2018Assignee: OmniVision Technologies, Inc.Inventors: Rui Wang, Hiroaki Ebihara, Zheng Yang, Chun-Ming Tang, Chao-Fang Tsai, Tiejun Dai
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Patent number: 9859322Abstract: Methods for glass removal while forming CMOS image sensors. A method for forming a device is provided that includes forming a plurality of pixel arrays on a device wafer; bonding a carrier wafer to a first side of the device wafer; bonding a substrate over a second side of the device wafer; thinning the carrier wafer; forming electrical connections to the first side of the device wafer; subsequently de-bonding the substrate from the second side of the device wafer; and subsequently singulating individuals ones of the plurality of pixel arrays from the device wafer. An apparatus is disclosed.Type: GrantFiled: March 15, 2016Date of Patent: January 2, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Pao-Tung Chen, Szu-Ying Chen, Dun-Nian Yaung, Jen-Cheng Liu
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Patent number: 9859311Abstract: A backside illuminated image sensor includes a semiconductor material with a plurality of photodiodes disposed in the semiconductor material, and a transfer gate electrically coupled to a photodiode in the plurality of photodiodes to extract image charge from the photodiode. The image sensor also includes a storage gate electrically coupled to the transfer gate to receive the image charge from the transfer gate. The storage gate has a gate electrode disposed proximate to a frontside of the semiconductor material, an optical shield disposed in the semiconductor material, and a storage node disposed between the gate electrode and the optical shield. The optical shield is optically aligned with the storage node to prevent the image light incident on the backside illuminated image sensor from reaching the storage node.Type: GrantFiled: November 28, 2016Date of Patent: January 2, 2018Assignee: OmniVision Technologies, Inc.Inventors: Sohei Manabe, Keiji Mabuchi, Takayuki Goto, Dajiang Yang
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Patent number: 9847363Abstract: A semiconductor device includes a semiconductor substrate, a radiation-sensing region, at least one isolation structure, and a doped passivation layer. The radiation-sensing region is present in the semiconductor substrate. The isolation structure is present in the semiconductor substrate and adjacent to the radiation-sensing region. The doped passivation layer at least partially surrounds the isolation structure in a substantially conformal manner.Type: GrantFiled: June 2, 2016Date of Patent: December 19, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tsung-Han Tsai, Yun-Wei Cheng, Kuo-Cheng Lee, Chun-Hao Chou, Yung-Lung Hsu
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Patent number: 9837461Abstract: An image sensor device is provided. The image sensor device includes a substrate, a first photoelectric conversion unit, a second photoelectric conversion unit, a third photoelectric conversion unit, a plurality of isolation structures, a first doped region, and a second doped region. The first, second, and third photoelectric conversion units are disposed in the substrate. The second photoelectric conversion unit is located between the first photoelectric conversion unit and the third photoelectric conversion unit. The isolation structures are disposed in the substrate between the photoelectric conversion units. The first doped region is formed in the substrate below the isolation structures. The first doped region extends below the third photoelectric conversion unit. The second doped region is formed in the substrate below a part of the first doped region. The second doped region extends below the second photoelectric conversion unit.Type: GrantFiled: January 27, 2017Date of Patent: December 5, 2017Assignee: SILICON OPTRONICS, INC.Inventor: Yu-Yuan Yao
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Patent number: 9838628Abstract: Capturing an image including: receiving an exposure time for an image sensor; measuring time to saturation for each sensel of a plurality of sensels of the image sensor; and calculating a number of electrons that would have been collected by each sensel with unlimited storage capacity using the time to saturation, the exposure time, and an electron collection capacity of a storage unit of each sensel. Key words include sensor saturation and high-dynamic range.Type: GrantFiled: March 16, 2016Date of Patent: December 5, 2017Assignees: SONY CORPORATION, SONY PICTURES ENTERTAINMENT INC.Inventor: Kazunori Tanaka
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Patent number: 9832405Abstract: A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell includes two pixels. Upper and lower photoelectric converters and, transfer transistors and connected to the upper and lower photoelectric converters, respectively, a reset transistor, and an amplifying transistor form the two pixels. A full-face signal line is connected to the respective drains of the reset transistor and the amplifying transistor. Controlling the full-face signal line, along with transfer signal lines and a reset signal line, to read out signals realizes the simplification of the wiring in the pixel, the reduction of the pixel size, and so on.Type: GrantFiled: May 20, 2016Date of Patent: November 28, 2017Assignee: Sony CorporationInventors: Takashi Abe, Nobuo Nakamura, Tomoyuki Umeda, Keiji Mabuchi, Hiroaki Fujita, Eiichi Funatsu, Hiroki Sato
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Patent number: 9825075Abstract: A method for fabricating an image sensor in accordance with an embodiment of the inventive concepts may include forming first and second photodiodes within a substrate, forming first and second gate electrodes over the substrate, the first gate electrode vertically partially overlapping the first photodiode and the second gate electrode vertically partially overlapping the second photodiode, forming an impurity injection region comprising first and second type impurities between the first and the second gate electrodes, and performing an annealing process to form a floating diffusion region comprising the first type impurities and a channel region comprising the second type impurities. The channel region surrounds lateral surfaces and a bottom surface of the floating diffusion region.Type: GrantFiled: August 12, 2016Date of Patent: November 21, 2017Assignee: SK Hynix Inc.Inventor: Sung-Kun Park
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Patent number: 9818783Abstract: Provided is a solid-state image pickup apparatus including a crosstalk suppression mechanism included in each pixel arranged in a pixel array, the crosstalk suppression mechanism of a part of the pixels differing from that of other pixels in an effective area of the pixel array.Type: GrantFiled: February 1, 2017Date of Patent: November 14, 2017Assignee: SONY CORPORATIONInventor: Kyosuke Ito
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Patent number: 9818793Abstract: A photoelectric conversion device according to the present invention has a plurality of photoreceiving portions provided in a substrate, an interlayer film overlying the photoreceiving portion, a large refraction index region which is provided so as to correspond to the photoreceiving portion and has a higher refractive index than the interlayer film, and a layer which is provided in between the photoreceiving portion and the large refraction index region, and has a lower etching rate than the interlayer film, wherein the layer of the lower etching rate is formed so as to cover at least the whole surface of the photoreceiving portion. In addition, the layer of the lower etching rate has a refractive index in between the refractive indices of the large refraction index region and the substrate. Such a configuration can provide the photoelectric conversion device which inhibits the lowering of the sensitivity and the variation of the sensitivity among picture elements.Type: GrantFiled: September 26, 2016Date of Patent: November 14, 2017Assignee: CANON KABUSHIKI KAISHAInventor: Sakae Hashimoto
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Patent number: 9812599Abstract: A method of forming a semiconductor material of a photovoltaic device that includes providing a surface of a hydrogenated amorphous silicon containing material, and annealing the hydrogenated amorphous silicon containing material in a deuterium containing atmosphere. Deuterium from the deuterium-containing atmosphere is introduced to the lattice of the hydrogenated amorphous silicon containing material through the surface of the hydrogenated amorphous silicon containing material. In some embodiments, the deuterium that is introduced to the lattice of the hydrogenated amorphous silicon containing material increases the stability of the hydrogenated amorphous silicon containing material.Type: GrantFiled: August 3, 2015Date of Patent: November 7, 2017Assignee: International Business Machines CorporationInventors: Bahman Hekmatshoar-Tabari, Marinus Hopstaken, Dae-Gyu Park, Devendra K. Sadana, Ghavam G. Shahidi, Davood Shahrjerdi
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Patent number: 9806116Abstract: A CMOS image sensor structure includes a substrate and pixel portions. Each pixel portion includes intersection areas, the border areas each of which is located between any two adjacent ones of the intersection areas, and a central area surrounded by the intersection areas and the border areas. Each pixel portion includes a device layer, an anti-reflective coating layer, discrete reflective structures, discrete metal blocking structures, a passivation layer and a color filter. The device layer is disposed on the substrate. Trenches are formed in the device layer and the substrate corresponding to the border areas respectively. The anti-reflective coating layer conformally covers the device layer, the substrate and the trenches. The reflective structures are disposed in the trenches. The metal blocking structures overly the anti-reflective coating layer in the intersection areas. The passivation layer conformally covers the metal blocking structures. The color filter is disposed on the passivation layer.Type: GrantFiled: October 28, 2015Date of Patent: October 31, 2017Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Bo-Tsung Tsai, Chun-Hao Chou, Tsung-Han Tsai, Kuo-Cheng Lee, Yung-Lung Hsu, Yun-Wei Cheng
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Patent number: 9806217Abstract: A metal-semiconductor-metal photodetecting device and method of manufacturing a metal-semiconductor-metal photodetecting device that includes a p-type silicon substrate with an oxide layer disposed on the p-type silicon substrate. Schotty junctions are disposed adjacent to the oxide layer on the p-type silicon substrate and a plasmonic grating disposed on the oxide layer. The plasmonic grating provides wavelength range selectability for the photodetecting device.Type: GrantFiled: April 30, 2015Date of Patent: October 31, 2017Assignee: William Marsh Rice UniversityInventors: Bob Yi Zheng, Yumin Wang, Nancy J. Halas, Peter Nordlander
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Patent number: 9786806Abstract: A semiconductor device includes a silicon substrate and a detection element and p-type and n-type MOS transistors, which are arranged on the silicon substrate, wherein the detection element includes a semiconductor layer, electrodes, and a Schottkey barrier disposed therebetween, the semiconductor layer is arranged just above a layer having the same composition and height as those of an impurity diffusion layer in the source or drain of the p-type or n-type MOS transistor, a region, in the silicon substrate, having the same composition and height as those of a channel region, in the silicon substrate, just below a gate oxide film of the p-type MOS transistor or the n-type MOS transistor, or a region, in the silicon substrate, having the same composition and height as those of a region just below a field oxide film disposed between the p-type and the n-type MOS transistor.Type: GrantFiled: December 22, 2014Date of Patent: October 10, 2017Assignee: CANON KABUSHIKI KAISHAInventors: Ryota Sekiguchi, Toshihiko Ouchi
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Patent number: 9780247Abstract: A SPAD including, in a substrate of a first conductivity type: a first region of the second conductivity type extending from the upper surface of the substrate; a second region of the first type of greater doping level than the substrate, extending from the lower surface of the first region, having a surface area smaller than that of the first region and being located opposite a central portion of the first region; a third region of the first type of greater doping level than the substrate extending from the upper surface of the substrate, laterally surrounding the first region; and a fourth buried region of the first type of greater doping level than the substrate, forming a peripheral ring connecting the second region to the third region.Type: GrantFiled: September 29, 2016Date of Patent: October 3, 2017Assignee: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Norbert Moussy, Jean-Louis Ouvrier-Buffet
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Patent number: 9773778Abstract: A semiconductor device may include a first doped region, a second doped region, two fin members, and an isolation member. The first doped region may have a first dopant type. The second doped region may have a second dopant type and may be positioned between two portions of the first doped region. The two fin members may overlap at least one of the first doped region and the second doped region. The isolation member may be formed of a dielectric material and may be positioned between the two fin members. The second doped region may be positioned between the isolation member and the first doped region.Type: GrantFiled: February 10, 2016Date of Patent: September 26, 2017Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATIONInventor: Fei Zhou
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Patent number: 9761623Abstract: A backside illuminated (BSI) image sensor with a reflector is provided. A pixel sensor is arranged on a lower side of a semiconductor substrate, and comprises a photodetector arranged within the semiconductor substrate. An interconnect structure is arranged under the semiconductor substrate and the pixel sensor, and comprises an interconnect layer and a contact via extending from the interconnect layer to the pixel sensor. The reflector is arranged under the photodetector, between the interconnect layer and the photodetector, and is configured to reflect incident radiation towards the photodetector. A method for manufacturing the BSI image sensor is also provided.Type: GrantFiled: May 2, 2016Date of Patent: September 12, 2017Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yueh-Chuan Lee, Chia-Chan Chen
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Patent number: 9762824Abstract: An imaging system unit cell and method of detecting an image. One example of an imaging system unit cell includes a photodetector configured to generate a photo-current in response to receiving optical radiation, a variable capacitance charge storing circuit in electrical communication with the photodetector and configured to integrate an electrical charge accumulated from the photo-current, a control circuit configured to monitor an integration voltage across the variable capacitance charge storing circuit and adjust a capacitance of the variable capacitance charge storing circuit based on the integration voltage, and an output configured to provide an output voltage based at least in part on the integrated voltage.Type: GrantFiled: December 30, 2015Date of Patent: September 12, 2017Assignee: RAYTHEON COMPANYInventor: Christian M. Boemler
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Patent number: 9748299Abstract: A pixel for a backside illuminated (BSI) image sensor includes a semiconductor substrate having a first surface and a second surface, a photoelectric conversion region between the first surface and the second surface to generate charges in response to light received through the second surface, first trench-type isolation region surrounding the photoelectric conversion region and extending vertically from the second surface, a floating diffusion region in the semiconductor substrate below the photoelectric conversion region, and a transfer gate extending vertically from the first surface towards the photoelectric conversion region to transfer the charges from the photoelectric conversion region to the floating diffusion region. The first trench-type isolation region is formed of a negative charge material.Type: GrantFiled: August 4, 2015Date of Patent: August 29, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Jung Chak Ahn, Kyung Ho Lee, Young Woo Jung, Seung Joo Nah, Hae Yong Park
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Patent number: 9748292Abstract: A solid-state image sensing element including a transistor with stable electrical characteristics (e.g., significantly low off-state current) is provided. Two different element layers (an element layer including an oxide semiconductor layer and an element layer including a photodiode) are stacked over a semiconductor substrate provided with a driver circuit such as an amplifier circuit, so that the area occupied by a photodiode is secured. A transistor including an oxide semiconductor layer in a channel formation region is used as a transistor electrically connected to the photodiode, which leads to lower power consumption of a semiconductor device.Type: GrantFiled: September 8, 2016Date of Patent: August 29, 2017Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Shunpei Yamazaki
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Patent number: 9749560Abstract: An image sensor may include a pixel array in which a plurality of pixel units are arranged in a matrix structure. Each of the pixel units may include a light receiver suitable for generating photocharge in response to incident light, a floating diffusion node electrically coupled to an end of the light receiver, and a reset transistor electrically isolated from the floating diffusion node, wherein a floating diffusion node of a first pixel unit among the plurality of pixel units is electrically coupled to a reset transistor of a second pixel unit adjacent to the first pixel unit among the plurality of pixel units.Type: GrantFiled: January 27, 2016Date of Patent: August 29, 2017Assignee: SK Hynix Inc.Inventor: Min-Hee Jo
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Patent number: 9728569Abstract: The present disclosure relates to a solid-state imaging device, an electronic apparatus, and a manufacturing method that are designed to further increase conversion efficiency. A solid-state imaging device includes a pixel in which element separation is realized by a first trench element separation region having a trench structure in a region between an FD unit and an amplifying transistor among element separation elements separating the elements constituting the pixel from one another, and a second trench element separation region having a trench structure in a region other than the region between the FD unit and the amplifying transistor among the element separation regions separating the elements constituting the pixel from one another, and the first trench element separation region is deeper than the second trench element separation region. The present technology can be applied to CMOS image sensors, for example.Type: GrantFiled: May 19, 2014Date of Patent: August 8, 2017Assignee: Sony CorporationInventor: Naoyuki Sato
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Patent number: 9711561Abstract: A solid-state imaging device including is provided. The solid-state imaging device includes: pixels arrayed; a photoelectric conversion element in each of the pixels; a read transistor for reading electric charges photoelectrically-converted in the photoelectric conversion elements to a floating diffusion portion; a shallow trench element isolation region bordering the floating diffusion portion; and an impurity diffusion isolation region for other element isolation regions than the shallow trench element isolation region.Type: GrantFiled: November 23, 2016Date of Patent: July 18, 2017Assignee: Sony CorporationInventors: Kazuichiro Itonaga, Yu Oya
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Patent number: 9704898Abstract: A bio-sensor includes a substrate having a light-sensing region thereon. A first dielectric layer, a diffusion barrier layer, and a second dielectric layer are disposed on the substrate. A trenched recess structure is formed in the second dielectric layer, which is filled with a light filter layer that is capped with a cap layer. A first passivation layer and a nanocavity construction layer are disposed on the cap layer. A nanocavity is formed in the nanocavity construction layer. The sidewall and bottom surface of the nanocavity is lined with a second passivation layer.Type: GrantFiled: January 5, 2016Date of Patent: July 11, 2017Assignee: Powerchip Technology CorporationInventors: Tse-Wei Chung, Tsung-Hui Chou, Che-Hung Lin, Shao-Wei Lu, Hsiao-Pei Lin
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Patent number: 9705023Abstract: An avalanche photodiode includes a GeOI substrate; an I—Ge absorption layer configured to absorb an optical signal and generate a photo-generated carrier; a first p-type SiGe layer, a second p-type SiGe layer, a first SiGe layer, and a second SiGe layer, where a Si content in any one of the SiGe layers is less than or equal to 20%; a first SiO2 oxidation layer and a second SiO2 oxidation layer; a first taper type silicon Si waveguide layer and a second taper type silicon Si waveguide layer; a heavily-doped n-type silicon Si multiplication layer; and anode electrodes and a cathode electrode.Type: GrantFiled: August 11, 2016Date of Patent: July 11, 2017Assignee: Huawei Technologies Co., Ltd.Inventors: Changliang Yu, Zhenxing Liao, Yanli Zhao
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Patent number: 9704911Abstract: An image sensor may include: a photoelectric conversion element; a transfer gate formed over the photoelectric conversion element; a plurality of active pillars electrically coupled to the photoelectric conversion element by penetrating the transfer gate; a reset transistor coupled to the plurality of active pillars; and a source follower transistor having a gate electrically coupled to one or more active pillars among the plurality of active pillars.Type: GrantFiled: January 29, 2015Date of Patent: July 11, 2017Assignee: SK Hynix Inc.Inventor: Dongyean Oh
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Patent number: 9704909Abstract: An image sensor is provided. The sensor comprises a plurality of photoelectric conversion elements each including a charge accumulation region of a first conductivity type arranged in a semiconductor substrate and an element isolation region arranged between the charge accumulation regions adjacent to each other. The element isolation region includes an insulator isolation portion arranged on an inner side of a trench on a surface of the semiconductor substrate, and includes a semiconductor region of a second conductivity type opposite to the first conductivity type arranged along a side surface of the insulator isolation portion. A gettering region is arranged between the semiconductor region and the insulator isolation portion along at least a part of the side surface of the insulator isolation portion.Type: GrantFiled: March 17, 2016Date of Patent: July 11, 2017Assignee: Canon Kabushiki KaishaInventor: Tasuku Kaneda
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Patent number: 9698185Abstract: Embodiments of an image sensor pixel that includes a photosensitive element, a floating diffusion region, and a transfer device. The photosensitive element is disposed in a substrate layer for accumulating an image charge in response to light. The floating diffusion region is dispose in the substrate layer to receive the image charge from the photosensitive element. The transfer device is disposed between the photosensitive element and the floating diffusion region to selectively transfer the image charge from the photosensitive element to the floating diffusion region. The transfer device includes a buried channel device including a buried channel gate disposed over a buried channel dopant region. The transfer device also includes a surface channel device including a surface channel gate disposed over a surface channel region. The surface channel device is in series with the buried channel device. The surface channel gate has the opposite polarity of the buried channel gate.Type: GrantFiled: October 13, 2011Date of Patent: July 4, 2017Assignee: OmniVision Technologies, Inc.Inventors: Gang Chen, Sing-Chung Hu, Hsin-Chih Tai, Duli Mao, Manoj Bikumandla, Wei Zheng, Yin Qian, Zhibin Xiong, Vincent Venezia, Keh-Chiang Ku, Howard E. Rhodes
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Patent number: 9691810Abstract: An image sensor includes a plurality of photodiodes arranged in an array and disposed in a semiconductor material with pinning wells disposed between individual photodiodes in the plurality of photodiodes. The image sensor also includes a microlens layer. The microlens layer is disposed proximate to the semiconductor material and is optically aligned with the plurality of photodiodes. A spacer layer disposed between the semiconductor material and the microlens layer. The spacer layer has a concave cross-sectional profile across the array, and the microlens layer is conformal with the concave cross-sectional profile of the spacer layer.Type: GrantFiled: December 18, 2015Date of Patent: June 27, 2017Assignee: OmniVision Technologies, Inc.Inventors: Yuanwei Zheng, Gang Chen, Duli Mao, Dyson Tai, Arvind Kumar, Hung Chih Chang, Chih-Wei Hsiung
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Patent number: 9691806Abstract: A semiconductor integrated circuit includes a first semiconductor substrate in which a part of an analog circuit is formed between the analog circuit and a digital circuit which subjects an analog output signal output from the analog circuit to digital conversion; a second semiconductor substrate in which the remaining part of the analog circuit and the digital circuit are formed; and a substrate connection portion which connects the first and second semiconductor substrates to each other. The substrate connection portion transmits an analog signal which is generated by a part of the analog circuit of the first semiconductor substrate to the second semiconductor substrate.Type: GrantFiled: March 4, 2015Date of Patent: June 27, 2017Assignee: Sony CorporationInventor: Yoshiharu Kudoh
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Patent number: 9681078Abstract: An image sensor includes charge accumulation region of first conductivity type, floating diffusion of the first conductivity type, stacked semiconductor region having first region of second conductivity type arranged below the charge accumulation region, second region of the second conductivity type arranged above the first region, and third region of the second conductivity type arranged above the second region. The sensor further includes fourth region of the second conductivity type arranged in region between the charge accumulation region and the floating diffusion, below the floating diffusion, and above the stacked semiconductor region, transfer gate for transferring charges of the charge accumulation region to the floating diffusion, and fifth region of the second conductivity type arranged in region below the charge accumulation region and the fourth region, and above the stacked semiconductor region.Type: GrantFiled: January 27, 2016Date of Patent: June 13, 2017Assignee: Canon Kabushiki KaishaInventors: Masayuki Tsuchiya, Kouhei Hashimoto, Yasushi Nakata, Takehiko Soda
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Patent number: 9673253Abstract: A method of manufacturing a photoelectric conversion device includes forming, with material containing aluminum, an electrically conductive pattern on a semiconductor substrate including a photoelectric converter, forming, on the electrically conductive pattern, an insulating film containing hydrogen, performing first annealing in a hydrogen-containing atmosphere, forming, on the insulating film, a protective film having lower hydrogen permeability than that of the insulating film after the first annealing, and performing second annealing in the hydrogen-containing atmosphere. Temperature in the first annealing is not less than temperature when forming the insulating film and not more than temperature when forming the protective film.Type: GrantFiled: April 27, 2016Date of Patent: June 6, 2017Assignee: CANON KABUSHIKI KAISHAInventors: Koji Hara, Nobutaka Ukigaya, Takeshi Aoki, Yukinobu Suzuki
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Patent number: 9673248Abstract: Some embodiments of the present disclosure provide a back side illuminated (BSI) image sensor. BSI image sensor includes a semiconductive substrate, a dielectric layer over the semiconductive substrate, and a pixel region. The pixel region includes a transistor disposed at a front side of the semiconductive substrate. The transistor includes a gate structure and at least a source region or a drain region. The transistor is coupled to a contact disposed in the dielectric layer. An oxide layer covers the gate structure and at least the source region or the drain region. A nitride layer covers the gate structure and at least the source region or the drain region. A color filter is disposed at a back side of the semiconductive substrate.Type: GrantFiled: February 13, 2015Date of Patent: June 6, 2017Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Tsung-Han Kuo, Chung-Chuan Tseng, Li-Hsin Chu, Zhi-Wei Zhuang
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Patent number: 9666617Abstract: An imaging device includes: a photodiode configured to perform photoelectric conversion and to generate electric charge in accordance with an amount of received light; a floating diffusion section configured to accumulate the electric charge generated in the photodiode; a reading circuit configured to output a pixel signal having a voltage in accordance with a level of the electric charge accumulated in the floating diffusion section, the reading circuit including one or a plurality of transistors each having a gate that is electrically connected to a wiring used for selecting a pixel; and an insulating section extending into part or whole of a bottom surface of the floating diffusion section, part or whole of bottom surfaces of source-drain regions in the one or the plurality of transistors, or both. The photodiode, the floating diffusion section, the reading circuit, and the insulating section are provided in a semiconductor layer.Type: GrantFiled: September 30, 2016Date of Patent: May 30, 2017Assignee: Sony CorporationInventors: Harumi Ikeda, Atsuhiko Yamamoto, Yoshiki Ebiko, Takeshi Yanagita
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Patent number: 9659993Abstract: A method of fabricating a composite semiconductor structure includes providing an SOI substrate including a plurality of silicon-based devices, providing a compound semiconductor substrate including a plurality of photonic devices, and dicing the compound semiconductor substrate to provide a plurality of photonic dies. Each die includes one or more of the plurality of photonics devices. The method also includes providing an assembly substrate having a base layer and a device layer including a plurality of CMOS devices, mounting the plurality of photonic dies on predetermined portions of the assembly substrate, and aligning the SOI substrate and the assembly substrate. The method further includes joining the SOI substrate and the assembly substrate to form a composite substrate structure and removing at least the base layer of the assembly substrate from the composite substrate structure.Type: GrantFiled: September 10, 2014Date of Patent: May 23, 2017Assignee: Skorpios Technologies, Inc.Inventors: John Dallesasse, Stephen B. Krasulick, Timothy Creazzo, Elton Marchena
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Patent number: 9646990Abstract: Methods of making monolithic three-dimensional memory devices include performing a first etch to form a memory opening and a second etch using a different etching process to remove a damaged portion of the semiconductor substrate from the bottom of the memory opening. A single crystal semiconductor material is formed over the substrate in the memory opening using an epitaxial growth process. Additional embodiments include improving the quality of the interface between the semiconductor channel material and the underlying semiconductor layers in the memory opening which may be damaged by the bottom opening etch, including forming single crystal semiconductor channel material by epitaxial growth from the bottom surface of the memory opening and/or oxidizing surfaces exposed to the bottom opening etch and removing the oxidized surfaces prior to forming the channel material. Monolithic three-dimensional memory devices formed by the embodiment methods are also disclosed.Type: GrantFiled: June 10, 2016Date of Patent: May 9, 2017Assignee: SANDISK TECHNOLOGIES LLCInventors: Sateesh Koka, Raghuveer S. Makala, Yanli Zhang, Senaka Kanakamedala, Rahul Sharangpani, Yao-Sheng Lee, George Matamis
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Patent number: 9648711Abstract: An X-ray detector comprises an array of pixels, each comprising a sensitive area, a body structure, and an electric circuitry. The sensitive areas are attached to, and arranged on, the body structure. The electric circuitry controls and reads out the sensitive areas and connects the sensitive areas with a processing unit. The sensitive areas provide an electric signal representing X-rays hitting the pixel. All pixels are provided in a pixel layout with a pixel layout scheme where the sensitive area is a first part of the pixel's surface that is contributing to the pixel's signal and a second part of the pixel's surface is irrelevant to contributing to the pixel's signal. To facilitate avoiding visual artifacts, the sensitive areas in a pattern in which at least a part of the pixels having the same pixel layout scheme such that the pixel layout of adjacent pixels is arranged differently.Type: GrantFiled: May 28, 2013Date of Patent: May 9, 2017Assignee: KONINKLIJKE PHILIPS N.V.Inventor: Hanns-Ingo Maack