Abstract: A MOS transistor with a deformable gate formed in a semiconductor substrate, including source and drain areas separated by a channel area extending in a first direction from the source to the drain and in a second direction perpendicular to the first one, a conductive gate beam placed at least above the channel area extending in the second direction between bearing points placed on the substrate on each side of the channel area, and such that the surface of the channel area is hollow and has a shape similar to that of the gate beam when said beam is in maximum deflection towards the channel area.

Abstract: Described is a process to pattern adhesion and top contact layers in such a way that at least some portion of the top contact layers overlaps the adhesion layer, while another portion of the top contact layer overlaps with the bottom contacts, but does not overlap with the adhesion layer. The overlap between the top contact layer and the adhesion layer helps to hold the top contact layer onto the sacrificial layer. Because there is no overlap between the adhesion layer and the bottom contact, the removal of adhesion layer is no longer necessary, leading to better contacts and simplifying the fabrication process.

Abstract: The present invention relates to a nanotube device (100, 600), comprising a nanotube with a longitudinal and a lateral extension, a structure for supporting at least a first part of the nanotube, and first means for exerting a force upon the nanotube in a first direction defined by its lateral extension. At least a second part of the nanotube protrudes beyond the support of said structure, so that when said force exceeds a certain level, the second part of the nanotube will flex in the direction of its lateral extension, and thereby close a first electrical circuit. Suitably, the first means for exerting said force upon the nanotube is an electrical means, the force being created by applying a voltage to the means.

Abstract: A component having a surface micromechanical structure containing both movable elements and immovable elements, and a method of manufacturing same are described. The surface micromechanical structure of the component is produced in a functional layer, which is connected to a substrate via at least one electrically non-conductive first insulation layer and at least one first sacrificial layer. The movable elements of the surface micromechanical structure are exposed by removing the first sacrificial layer. The first insulation layer is made of a material which is not substantially attacked by the process of removing the first sacrificial layer. Thus the removal of the sacrificial layer may be limited in a design-controlled manner. At the same time, a reliable electrical insulation of the surface micromechanical structure with respect to the substrate of the component and a reliable mechanical fastening of the immovable elements of the surface micromechanical structure to the substrate are ensured.

Abstract: A piezo-TFT cantilever microelectromechanical system (MEMS) and associated fabrication processes are provided. The method comprises: providing a substrate, such as glass for example; forming thin-films overlying the substrate; forming a thin-film cantilever beam; and simultaneously forming a TFT within the cantilever beam. The TFT is can be formed least partially overlying a cantilever beam top surface, at least partially overlying a cantilever beam bottom surface, or embedded within the cantilever beam. In one example, forming thin-films on the substrate includes: selectively forming a first layer with a first stress level; selectively forming a first active Si region overlying the first layer; and selectively forming a second layer overlying the first layer with a second stress level. The thin-film cantilever beam is formed from the first and second layers, while the TFT source/drain (S/D) and channel regions are formed from the first active Si region.

Abstract: A differential pressure sensor has a semiconductor wafer having a top and bottom surface. The top surface of the wafer has a central active area containing piezoresistive elements. These elements are passivated and covered with a layer of silicon dioxide. Each element has a contact terminal associated therewith. The semiconductor wafer has an outer peripheral silicon frame surrounding the active area. The semiconductor wafer is bonded to a glass cover member via an anodic or electrostatic bond by bonding the outer peripheral frame to the periphery of the glass wafer. An inner silicon dioxide frame forms a compression bond with the glass wafer when the glass wafer is bonded to the silicon frame. This compression bond prevents deleterious fluids from entering the active area or destroying the silicon. The above described apparatus is mounted on a header such that through holes in the glass wafer are aligned with the header terminals.

Abstract: A method for producing micromechanical structures, in which a functional layer is deposited onto a sacrificial layer, and the sacrificial layer is removed again for the production of at least one mechanical functional element, which is characterized by a surface barrier layer, with which the functional layer begins on the sacrificial layer, and which has a different state from the remaining functional layer, is also removed at least to a considerable part, or, on the functional layer, one layer or a plurality of layers having at least approximately the same properties with respect to stress in the layer or layers such as the surface barrier layer is (are) applied. Additionally, a micromechanical structure having a functional layer in which the functional layer is constructed in such a way that the stresses are neutralized or no stress gradient appears.

Abstract: A pressure sensor chip includes a diaphragm and pads. A flexible printed circuit board (FPC) includes a resin sheet having a through-hole and wiring patterns that are formed within the resin sheet and sealed. The resin sheet is press-fitted to the pressure sensor chip such that the diaphragm is bared at the through-hole. The wiring patterns are connected to the pads, and junctions between the wiring patterns and the pads are sealed with the resin sheet.

Abstract: A method for processing microelectromechanical devices is disclosed herein. The method prevents the diffusion and interaction between sacrificial layers and structure layers of the microelectromechanical devices by providing selected barrier layers between consecutive sacrificial and structure layers.

Abstract: A pressure sensor includes a silicon-on-insulator (SOI) substrate, a glass substrate bonded to the SOI substrate by anode bonding, a silicon island formed on a part of a silicon layer of the SOI substrate and surrounded by a groove extending to an insulating layer of the SOI substrate, a through hole formed in the glass substrate, and an output electrode that is made of a conductive material, is disposed inside the through hole, and is electrically connected to an electrode formed on the glass substrate via the silicon island.

Abstract: The present invention provides a semiconductor acceleration sensor wherein a semiconductor element is prevented from being damaged even when at least part of a weight is disposed in an internal space of a semiconductor sensor element and the mass of a weight is accordingly increased. An inner peripheral surface of a support portion 9 is constituted by four trapezoidal inclined surfaces 13 of a substantially identical shape which are annularly combined so as to define an outer peripheral surface of a frust-pyramidal space. A weight 3 is so constructed as to have an abutting portion including a linear portion 3d which abuts against the inclined surfaces 13 constituting the inner peripheral surface of the support portion 9 when the weight 3 makes a maximum displacement in a direction where a diaphragm portion 11 is located. The abutting portion 3d has a circular outline shape as seen from a side where a weight fixing portion 7 is located.

Abstract: The present invention relates to a method of manufacturing a semiconductor substrate including the back grind step, the dicing step, the pick up step, and the die bonding step of the wafer; and to a semiconductor substrate jig used in such method. The object of the present invention is to mitigate the effect and to prevent damage caused by the lack of strength in thinned semiconductor substrates. A jig with an outer frame 21, and a rubber film 22 arranged within the outer frame 21 and having increasing and decreasing body size while deforming its shape by supplying air therein are provided. As the volume of the rubber film 22 increases, the wafer-fixing jig 20 deforms the rubber film and allows the tapes 2 and 6 arranged between the wafer 1 and the rubber film 22A to be pushed toward the wafer 1 gradually from the center outward. The attachment step, the back grind step, the tape reapplication step, the pick up step and the die bonding step are conducted using such wafer-fixing jig.

Abstract: A semiconductor device connecting structure is provided for connecting a semiconductor IC to a substrate. A bonding layer is placed between the substrate and the semiconductor IC to accomplish adhesion therebetween. Sufficient heat and pressure are applied to the bonding layer to create spaces therein which deform during relative movement between the semiconductor IC and substrate thereby maintaining consistent electrical contact between the semiconductor contact bumps and electrodes on the substrate.

Abstract: A valve structure includes an elastomeric block formed with first and second microfabricated recesses separated by a membrane portion of the elastomeric block. The valve is actuated by positioning a compliant electrode on a first side of the first recess proximate to and in physical communication with the membrane. Where the valve is to be electrostatically actuated, a second electrode is positioned on a second side of the first recess opposite the first side. Application of a potential difference across the electrodes causes the compliant electrode and the membrane to be attracted into the flow channel. Where the valve is to be electrostrictively actuated, a second electrode is positioned on the same side of the recess as the compliant electrode. Application of a potential difference across the electrodes causes the electrodes to be attracted such that elastomer membrane portion material between them is compressed and bows into the flow channel.

Abstract: A microelectromechanical system is made by establishing a flexure protection layer over a portion of at least one flexure which is located on a substrate. The flexure protection layer is deposited such that a portion of the flexure is left exposed. Contact is established between a flexure-engaging element and the exposed portion of the flexure. The remaining flexure protection layer is removed after the flexure-engaging element is patterned and etched.

Abstract: There is disclosed a combined absolute differential pressure transducer which consists of two sensors made from the same wafer silicon and selected to be adjacent to each other on the wafer. Since the same pressure is applied to the boss side of both sensors and a second pressure is applied to the opposite side of the differential sensor, deflection and the stress of the second sensor is determined by the pressure difference across the deflecting portion of the sensor. To obtain the same stresses in the thin section of each sensor, the overall active area of each sensor is different. For the same thickness read, the absolute value of P2?P1 where P2 is the pressure applied to the front side of the two sensors and P1 is the pressure applied to the differential sensor through the metal tube is less than P2 to obtain the same stress in each sensor a great active area in the differential sensor is required.

Abstract: An electronic component includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, a cavity that penetrates from the first surface to the second surface of the semiconductor substrate, and an electrical mechanical element that has a movable portion formed above the first surface of the semiconductor substrate so that the movable portion is arranged above the cavity. The electronic component further includes an electric conduction plug, which penetrates from the first surface to the second surface of the semiconductor substrate, and which is electrically connected to the electrical mechanical element.

Abstract: A magnetic sensor includes a thin deformable membrane made of a conductive material forming a first plate of a capacitor which conducts an electric current therethrough. A second capacitor plate of the capacitor includes a doped region of a semiconductor substrate. A layer of a gaseous dielectric separates the two plates. The membrane deforms due to the effect of the Lorentz force generated by a magnetic field lying in the plane of the membrane and perpendicular to the lines of current being conducted therethrough. In addition, a process for fabricating this magnetic sensor is also provided as well as a device for measuring a magnetic field using the magnetic sensor.

Abstract: In one embodiment of the invention, a MEMS structure includes a first electrode, a second electrode, and a mobile element. The first electrode is coupled to a first voltage source. The second electrode is coupled to a second voltage source. The mobile element includes a third electrode coupled to a third voltage source. A steady voltage difference between the first electrode and the third electrode is used to tune the natural frequency of the structure to a scanning frequency of an application. An oscillating voltage difference between the second electrode and the third electrode at the scanning frequency of the application is used to oscillate the mobile element. In one embodiment, the mobile unit is a mirror.

Abstract: A micro electromechanical switchable capacitor is disclosed, comprising a substrate, a bottom electrode, a dielectric layer deposited on at least part of said bottom electrode, a conductive floating electrode deposited on at least part of said dielectric layer, an armature positioned proximate to the floating electrode and a first actuation area in order to stabilize the down state position of the armature. The device may furthermore comprise a second actuation area. The present invention provides shunt switches and series switches with actuation in zones attached to the floating electrode area or with relay actuation.

Abstract: A flexible wireless MEMS microphone includes a substrate of a flexible polymeric material, a flexible MEMS transducer structure formed on the substrate by PECVD, an antenna printed on the substrate for communicating with an outside source, a wire and interface circuit embedded in the substrate to electrically connect the flexible MEMS transducer and the antenna, a flexible battery layer electrically connected to the substrate for supplying power to the MEMS transducer, and a flexible bluetooth module layer electrically connected to the battery layer. The flexible MEMS transducer includes a flexible substrate, a membrane layer deposited on the substrate, a lower electrode layer formed on the membrane layer, an active layer formed by depositing a piezopolymer on the lower electrode layer, an upper electrode layer formed on the active layer, and a first and a second connecting pad electrically connected to the lower and upper electrode layers, respectively.

Abstract: Reflecting layers in first, second and third regions are separated from a reflecting layer in the surrounding region by a separating groove. The first region is folded in a valley shape from a substrate at a groove, the first region and the second region are folded in a valley shape at a groove, the third region is folded in a valley shape from the substrate at a groove, and the second region and the third region are folded in a mountain shape by a line.

Abstract: The present invention relates to micro electro-mechanical systems (MEMS) and production methods thereof, and more particularly to vertically integrated MEMS systems. Manufacturing of MEMS and vertically integrated MEMS is facilitated by forming, preferably on a wafer level, plural MEMS on a MEMS layer selectively bonded to a substrate, and removing the MEMS layer intact.

Abstract: A microelectromechanical device and method of fabricating the same, including a layer of patterned and deposited metal or mechanical-quality, doped polysilicon inserted between the appropriate device element layers, which provides a conductive layer to prevent the microelectromechanical device's output from drifting. The conductive layer may encapsulate of the device's sensing or active elements, or may selectively cover only certain of the device's elements. Further, coupling the metal or mechanical-quality, doped polysilicon to the same voltage source as the device's substrate contact may place the conductive layer at the voltage of the substrate, which may function as a Faraday shield, attracting undesired, migrating ions from interfering with the output of the device.

Abstract: Tensile or compressive stress may be added in one or more selected locations to the biaxial residual stress existing in the channel of a semiconductor device, such as a MOSFET. The periphery of the active area containing the channel is modified by following layout procedures that result in forming outward protrusions of or inward depressions in the periphery of the active area and its surrounding shallow trench isolation during generally otherwise conventional fabrication of the device.

Abstract: A sensor has a foundation wafer having a sensor chamber, at least one silicon-based micromechanical structure integrated with the sensor chamber of the foundation wafer, at least one covering that covers the foundation wafer in a region of the sensor chamber, the covering including a first layer which is a deposition layer and is permeable to an etching medium and reaction products, and a hermetically sealing second layer which is a sealing layer and located above the first layer, the deposition layer which is the first layer being permeable in a region of the sensor chamber to the etching medium and a reaction product, the deposition layer for being permeable having structures selected from the group consisting of etching openings, porous regions, and both.

Abstract: A microelectromechanical system includes a first wafer, a second wafer including a moveable portion, and a third wafer. The movable portion is movable between the first wafer and the third wafer. The first wafer, the second wafer, and the third wafer are bonded together.

Abstract: There are many inventions described and illustrated herein. In one aspect, there is described a thin film or wafer encapsulated MEMS, and technique of fabricating or manufacturing a thin film or wafer encapsulated MEMS employing anti-stiction techniques. In one embodiment, after encapsulation of the MEMS, an anti-stiction channel is formed thereby providing “access” to the chamber containing some or all of the active members or electrodes of the mechanical structures. Thereafter, an anti-stiction fluid (for example, gas or gas-vapor) is introduced into the chamber via the anti-stiction channel. The anti-stiction fluid may deposit on one, some or all of the active members of the mechanical structures thereby providing an anti-stiction layer (for example, a monolayer coating or self-assembled monolayer) and/or out-gassing molecules on such members or electrodes. After introduction and/or application of the anti-stiction fluid, the anti-stiction channel may be sealed, capped, plugged and/or closed.

Abstract: What is proposed is a vertical field effect transistor produced from a semiconductor wafer, comprising a residual transistor composed of a source zone, a channel zone and a drain zone, as well as a movable gate structure disposed by means of at least one flexible suspension in front of said channel zone and spaced therefrom, which is characterized by the provision that the movable gate structure consists of the material of said semiconductor wafer. The suspensions of the movable structure preferably present a high ratio of their height to their width, such that the movable gate may preferably move in the wafer plane.

Abstract: The present invention is directed to a process for the manufacture of a plurality of integrated capacitive transducers.

Abstract: Microrelays and microrelay fabrication and operating methods providing a microrelay actuator positively controllable between a switch closed position and a switch open position. The microrelays are a five terminal device, two terminals forming the switch contacts, one terminal controlling the actuating voltage on an actuator conductive area, one terminal controlling the actuating voltage on a first fixed conductive area, and one terminal controlling the actuating voltage on a second fixed conductive area deflecting the actuator in an opposite direction than the first fixed conductive area. Providing the actuating voltages as zero average voltage square waves and their complement provides maximum actuating forces, and positive retention of the actuator in both actuator positions. Various fabrication techniques are disclosed.

Abstract: A method of making a micro electromechanical gyroscope. A cantilevered beam structure, first portions of side drive electrodes and a mating structure are defined on a first substrate or wafer; and at least one contact structure, second portions of the side drive electrodes and a mating structure are defined on a second substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer and the first and second portions of the side drive electrodes being of a complementary shape to each other. A bonding layer, preferably a eutectic bonding layer, is provided on at least one of the mating structures and one or the first and second portions of the side drive electrodes. The mating structure of the first substrate is moved into a confronting relationship with the mating structure of the second substrate or wafer.

Abstract: A method of bonding and packaging components of Micro-Electro-Mechanical Systems (MEMS) and MEMS based devices using a Solid-Liquid InterDiffusion (SLID) process is provided. A micro-machine is bonded to a micro-machine chip using bonding materials. A layer of chromium is first deposited onto surfaces of the micro-machine and the micro-machine chip followed by a layer of gold. Subsequently, a layer of indium is deposited between the layers of gold, and the surface of the micro-machine is pressed against the surface of the micro-machine chip forming a gold-indium alloy to serve as a bond between the micro-machine and the micro-machine chip. In addition, a cover is bonded to the micro-machine chip in the same manner providing a hermetic seal for the MEMS based device.

Abstract: A method for producing micromechanical structures, in which a functional layer is deposited onto a sacrificial layer, and the sacrificial layer is removed again for the production of at least one mechanical functional element, which is characterized by a surface barrier layer, with which the functional layer begins on the sacrificial layer, and which has a different state from the remaining functional layer, is also removed at least to a considerable part, or, on the functional layer, one layer or a plurality of layers having at least approximately the same properties with respect to stress in the layer or layers such as the surface barrier layer is (are) applied. Additionally, a micromechanical structure having a functional layer in which the functional layer is constructed in such a way that the stresses are neutralized or no stress gradient appears.

Abstract: A suspended semiconductor film is anchored to a substrate at at least two opposed anchor positions, and film segments are deposited on the semiconductor film adjacent to one or more of the anchor positions to apply either tensile or compressive stress to the semiconductor film between the film segments. A crystalline silicon film may be anchored to the substrate and have tensile stress applied thereto to reduce the lattice mismatch between the silicon and a silicon-germanium layer deposited onto the silicon film. By controlling the level of stress in the silicon film, the size, density and distribution of quantum dots formed in a high germanium content silicon-germanium film deposited on the silicon film can be controlled.

Abstract: A sputtered silicon layer and a low temperature fabrication method thereof, is introduced. The sputtered silicon layer is sputtered with predetermined sputtering criteria resulting in a predetermined pre-annealing configuration. The sputtering criteria include sputtering power, ambient sputtering pressure, choice of sacrificial layer and etchant. The initially sputtered layer is transformed during a low temperature annealing process into a post-annealing state. A released structure is micro-machined from the sputtered layer in its post-annealed state. The low temperature annealing leaves pre-fabricated integrated aluminum-metalized circuitry unaffected. Optional conductive sputtered co-layers reduce resistivity and may be used to further tune strain and strain gradient.

Abstract: The invention relates to a miniature electrostatic actuation device (100) capable of generating movements along a determined direction (F), comprising pairs of electrodes (4) of which the mobile electrodes (8) may be pulled into contact with a fixed electrode (6) on a variable pull-in surface that varies as a function of the voltage applied between these pairs of electrodes. According to the invention, the device also comprises an actuation element (12) connected to the mobile electrodes (8), the element (12) being capable of occupying a rest position and of being guided along the determined direction (F) when the voltage applied between the electrodes in each pair (4) varies, the device comprising return arms (14) capable of pulling the actuation element (12) back towards its rest position, when the voltage applied between the two electrodes in each pair of electrodes is reduced. To be applied to actuation of continuously deformable micro-mirrors.

Abstract: A monolithically integrated, electromechanical microwave switch, capable of handling signals from DC to millimeter-wave frequencies, and an integrated electromechanical tunable capacitor are described. Both electromechanical devices include movable beams actuated either by thermo-mechanical or by electrostatic forces. The devices are fabricated directly on finished silicon-based integrated circuit wafers, such as CMOS, BiCMOS or bipolar wafers. The movable beams are formed by selectively removing the supporting silicon underneath the thin films available in a silicon-based integrated circuit technology, which incorporates at least one polysilicon layer and two metallization layers. A cavity and a thick, low-loss metallization are used to form an electrode above the movable beam. A thick mechanical support layer is formed on regions where the cavity is located, or substrate is bulk-micro-machined, i.e., etched.

Abstract: In a semiconductor sensor having a membrane structure, the destruction of the membrane caused by the expansion or contraction of a fluid within a hollow part formed under the membrane while the sensor is in use is prevented. A semiconductor sensor 10 comprising a substrate 30 and a membrane 20 formed on the top surface thereof, in which the bottom of the substrate 30 and a mounting surface 50 on which the sensor 10 is mounted are bonded, has pressure difference adjusting means 22a to 22c for eliminating the difference in pressure of a fluid between an inside and an outside of a hollow part 34 while the sensor is in use.

Abstract: A manufacturing method for a planar lightwave circuit device. A lift-off mask layer is formed on a planar lightwave circuit composed of cores and a cladding. The lift-off mask layer is next exposed to light by using a mask having a plurality of first patterns respectively corresponding to the cores and a plurality of second patterns each formed on at least one side of each first pattern in spaced relationship therewith. A wiring pattern material layer is next deposited on the lift-off mask layer exposed above, and the lift-off mask layer is next stripped off to thereby form a plurality of real patterns respectively corresponding to the first patterns and a plurality of dummy patterns respectively corresponding to the second patterns, from the wiring pattern material layer.

Abstract: A semiconductor acceleration sensor includesa non-single-crystal-silicon-based substrate, an insulating beam structure having a movable section and a stationary section, at least one piezoresistor positioned on the beam structure, an insulating supporter positioned on the non-single-crystal-silicon-based substrate for fixing the stationary section of the beam structure and forming a distance between the beam structure and the non-single-crystal-silicon-based substrate, and a thin film transistor (TFT) control circuit positioned on the non-single-crystal-silicon-based substrate and electrically connected to the piezoresistor and the beam structure.

Abstract: An optical device having a high reflector tunable stress coating includes a micro-electromechanical system (MEMS) platform, a mirror disposed on the MEMS platform, and a multiple layer coating disposed on the mirror. The multiple layer coating includes a layer of silver (Ag), a layer of silicon dioxide (SiO2) deposited on the layer of Ag, a layer of intrinsic silicon (Si) deposited on the layer of SiO2, and a layer of silicon oxynitride (SiOxNy) deposited on the layer of Si. The concentration of nitrogen is increased and/or decreased to tune the stress (e.g., tensile, none, compressive).

Abstract: Semiconductor components in a wafer assembly, in which the components are connected to a frame by means of in each case one holder and are formed from the same silicon wafer. The holder connects the respective component to the frame on one side and has a desired breaking point. The desired breaking point is designed as a V-shaped groove, the surfaces of which form crystal planes. According to the method, the patterning for production of the holder takes place on the wafer back surface, with subsequent wet chemical anisotropic etching of the V-groove. In this way, the holder is produced independently of the processing of the wafer front surface, and when the semiconductor component is removed a defined broken edge is formed without there being any risk of the semiconductor component being damaged.

Abstract: An inertial sensor with failure threshold includes a first body and a second body, which can move relative to one another and are constrained by a plurality of elastic elements, and a sample element connected between the first body and the second body and shaped so as to be subjected to a stress when the second body is outside of a relative resting position with respect to the first body. The sample element has at least one weakened region. The sensor may also include additional sample elements connected between the first and second bodies.

Abstract: A pressure transducer designed to transform static pressure or dynamic pressure applied to a diaphragm into a corresponding electrical signal and a method of manufacturing the same are provided. The transducer includes a fixed electrode formed in an upper surface of a substrate and a moving electrode provided in the diaphragm disposed above the fixed electrode through a cavity. The substrate has formed in the bottom thereof at least one hole which is used in a manufacturing process for removing a sacrificial layer formed between the diaphragm and the upper surface of the substrate in dry etching to form the cavity.

Abstract: An electrostatic electroacoustical transducer contains an electrically conductive fixed electrode plate having an active surface with recesses. A conductive or semiconductive flexible diaphragm is disposed at a distance from the active surface of the electrode plate and within the recesses. An insulating device is disposed between the electrode plate and the diaphragm.

Abstract: A substrate under tension and/or compression improves performance of devices fabricated therein. Tension and/or compression can be imposed on a substrate through selection of appropriate gate sidewall spacer material disposed above a device channel region wherein the spacers are formed adjacent both the gate and the substrate and impose forces on adjacent substrate areas. Another embodiment comprises compressive stresses imposed in the plane of the channel using SOI sidewall spacers made of polysilicon that is expanded by oxidation. The substrate areas under compression or tension exhibit charge mobility characteristics different from those of a non-stressed substrate. By controllably varying these stresses within NFET and PFET devices formed on a substrate, improvements in IC performance have been demonstrated.

Abstract: A quasi-optical system is provided. More specifically, a quasi-optical system is provided comprising various embodiments of quasi-optical grids (such as arrays or layers and the like) with reconfigurable quasi-optical unit cells. The quasi-optical system, grids and unit cells are configured to control an incident beam in a variety of ways.

Abstract: A method of forming a surface micromachined MEMS device applies an insulator to a substrate, and then deposits a conductive path on the insulator. The conductive path is capable of transmitting an electronic signal between two points on the MEMS device. The insulator electrically isolates the conductive path from the substrate. The MEMS device illustratively is free of semiconductor junctions formed by the substrate and the conductive path.

Abstract: A structure and method for creating a contact between a conductive layer and a pad for dissipating electrostatic charges comprising the steps of, forming a pad and a composite insulating layer between and over conductive plates on a substrate, wherein the insulating layer isolates and protects the conductive plates and pad from damage, the insulating layer comprising a dielectric region underlying a conductive layer. A passivation layer is formed over at least a portion of the conductive layer and a photoresist is patterned over at least a portion of the passivation. An opening is etched through the passivation and the insulating layers, wherein the photoresist and the conductive layer serve as masks. Finally, a conductive material is deposited in the opening to form an electrical contact between the pad and the conductive layer.