Abstract: A transistor using mechanical stress to alter carrier mobility. Voids are formed in one or more of the source, drain, channel or gate regions to introduce tensile or compressive stress to improve short channel effects.

Abstract: A recess is produced in a material layer by creating at least a first and a second structure in various steps. The layers define each other laterally and extend to the bottom of the recess. The first structure and the second structure are so narrow that they can be made by creating conformally produced layers that have an independent thickness and are smaller than the depth of the recess. The conformally produced layers are formed in an appropriate deposition process. A covering structure can be produced on top of the first and second structure. An opening can be made in the covering structure, through which the first structure and the second structure can be removed in an etching step.

Abstract: A contactless acceleration switch detects a threshold acceleration value when a mass attached to a spring, moves towards a source, a drain, and a threshold adjustment channel implanted in a substrate layer. The threshold adjustment channel is located between the source and the drain. The implanted area is located between insulator posts. A spring is attached to the insulator posts. A mass is held above the implanted area by the spring. When the threshold acceleration value is detected, the mass moves towards the substrate layer. The threshold adjustment channel then inverts causing current to flow between the source and the drain, providing an electrical signal indicating that the threshold acceleration value has been reached.

Abstract: The invention relates to a sensor with at least one silicon-based micromechanical structure, which is integrated with a sensor chamber of a foundation wafer, and with at least one covering that covers the foundation wafer in the region of the sensor chamber, and to a method for producing a sensor.

Abstract: A method of improving the robustness of microcomponents formed of silicon by armor coating the microcomponent with a ductile material, such as a metal. The armored coating may comprise either partial armored coating or total armored coating. Providing the microcomponent with an armored coating reduces chipping and breaking, and likewise reduces contamination problems which arise from chips and breaks.

Abstract: In an integrated pressure sensor including a semiconductor substrate having a p type single crystal silicon substrate and an n type epitaxial layer of which a portion is etched by electrochemical etching to have a diaphragm, an impurity diffusion layer piercing the n type epitaxial layer at least defining the diaphragm is formed for isolation. An etching wire is formed on the surface of the n type epitaxial layer with insulation and the first end of the etching wire extends to the inside of the surface and is connected to the n type epitaxial layer. The second opposite end extends to an edge of the semiconductor substrate. The etching wire does not cross the impurity layer inside the surface of the semiconductor substrate to prevent the etching wire from short-circuiting with the impurity diffusion layer during the electrochemical etching.

Abstract: The invention relates to a miniature electrostatic actuation device (100) capable of generating movements along a determined direction (F), comprising pairs of electrodes (4) of which the mobile electrodes (8) may be pulled into contact with a fixed electrode (6) on a variable pull-in surface that varies as a function of the voltage applied between these pairs of electrodes. According to the invention, the device also comprises an actuation element (12) connected to the mobile electrodes (8), the element (12) being capable of occupying a rest position and of being guided along the determined direction (F) when the voltage applied between the electrodes in each pair (4) varies, the device comprising return arms (14) capable of pulling the actuation element (12) back towards its rest position, when the voltage applied between the two electrodes in each pair of electrodes is reduced.

Abstract: A method of mapping diagonal rows and columns of two-dimensional grid elements to rectangular rows and columns of two-dimensional grid elements. The method is of particular use with a spatial light modulator in optical equalization application.

Abstract: A semiconductor pressure sensor includes a SOI substrate composed of first and second silicon substrates. A diaphragm portion is formed by the first silicon substrate as a bottom of a recess portion formed in the second silicon substrate. Strain gauges are formed on the diaphragm portion, and a circuit portion is formed on the first silicon substrate at a region other than the diaphragm portion. A LOCOS film for isolating the strain gauges from the circuit portion is formed on the first silicon substrate outside the outermost peripheral portion of the diaphragm portion.

Abstract: Metal wiring segments, which are located at peripheral positions of a diaphragm, are formed on a main surface of a thick portion of a semiconductor substrate. A ratio S/d is larger than 100, where an area of the diaphragm is S &mgr;m2 and a thickness thereof is d &mgr;m. Further, a total area of the metal wiring segments arranged on first sides of the substrate is larger than total area of the metal wiring segments arranged on second sides of the substrate, where the first sides indicate the sides in parallel with <110> crystalline axis and the second sides indicate the sides in parallel with <100> crystalline axis.

Abstract: A strain-isolated mirror is made from a substrate having first and second body portions. First and second connecting portions extend across a gap between the first body portion and the second body portion. A first flexural hinge on the first second connecting portion couples the second connecting portion to the first body portion.

Abstract: Microrelays and microrelay fabrication and operating methods providing a microrelay actuator positively controllable between a switch closed position and a switch open position. The microrelays are a five terminal device, two terminals forming the switch contacts, one terminal controlling the actuating voltage on an actuator conductive area, one terminal controlling the actuating voltage on a first fixed conductive area, and one terminal controlling the actuating voltage on a second fixed conductive area deflecting the actuator in an opposite direction than the first fixed conductive area. Providing the actuating voltages as zero average voltage square waves and their complement provides maximum actuating forces, and positive retention of the actuator in both actuator positions. Various fabrication techniques are disclosed.

Abstract: A method and apparatus comprising thinning a substrate sufficiently to allow it to be mechanically compliant with a material deposited on its surface is disclosed. The mechanical compliance allows a reduction in the interlayer stress generated by dissimilarities in the materials.

Abstract: A contactless acceleration switch detects a threshold acceleration value when a mass attached to a spring, moves towards a source, a drain, and a threshold adjustment channel implanted in a substrate layer. The threshold adjustment channel is located between the source and the drain. The implanted area is located between insulator posts. A spring is attached to the insulator posts. A mass is held above the implanted area by the spring. When the threshold acceleration value is detected, the mass moves towards the substrate layer. The threshold adjustment channel then inverts causing current to flow between the source and the drain, providing an electrical signal indicating that the threshold acceleration value has been reached.

Abstract: An integrated module including an array of electrostatically actuated mirrors usable as an optical switch. An array of tiltable mirrors is formed as a micro electromechanical system (MEMS) in one carrier substrate. A ceramic multi-chip module (MCM) is formed having multiple layers of wiring and electrodes at one surface forming one side part of the electrostatic capacitive actuators. The MEMS substrate is bonded to the carrier with the carrier electrodes in opposition to the mirrors, which form counter electrodes. Advantageously, a handle layer of the MEMS substrate is not removed and the mirrors released until after the bonding with the MCM. Separate high-voltage integrated circuits (ICs) driving the actuators and low-voltage ICs controlling the high-voltage ICs are bonded on the side of the MCM opposite the MEMS with the MCM providing electrical interconnections.

Abstract: Methods and apparatus are disclosed for selectively inducing stress in a semiconductor device, wherein a first region of a substrate is implanted so as to induce stress in a second region. An electrical device is formed at least partially in the second region, wherein the induced stress therein may improve one or more operational characteristics of the device, such as channel region carrier mobility.

Abstract: An ultra-rugged biometric integrated circuit sensor and method for constructing the same is provided. The sensor comprises a sensing area and a control electronics area, and, as result of its construction, the sensor has a topology whereby the sensing area is elevated with respect to the control electronics area. In other words, a depression is created on the sensor surface that allows the control electronics to escape damaging impacts by external forces. According to one embodiment, the sensing area and control electronics area are structures such there is no overlap between either area, except where the sensing area is electrically coupled to the control electronics. According to another embodiment, the sensor further comprises a electric static discharge structure that creates a least resistant path to ground. The electric static discharge structure further protects the control electronics from high voltage surges encountered in normal operation.

Abstract: A sensor formed from a semiconductor material. The device comprises a support frame, a sensing element; and means for vibrating the sensing element at a frequency corresponding generally to a first resonant frequency vibration mode. Error detection means detects the resonant frequency vibration mode, the output of the error detection means being indicative of existence or otherwise an expected response of the resonant frequency vibration mode to the excitation. Means for detecting the deformation of the sensing element provides an output indicative of the parameter to be sensed, the deformation detecting means and error detection means being formed from the same elements.

Abstract: A method of making a micro electro-mechanical switch or tunneling sensor. A cantilevered beam structure and a mating structure are defined on a first substrate or wafer; and at least one contact structure and a mating structure are defined on a second substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer. At least one of the mating structures includes a protrusion extending from a major surface of at least one of said substrates. A bonding layer, preferably a eutectic bonding layer, is provided on at least one of the mating structures. The mating structure of the first substrate is moved into a confronting relationship with the mating structure of the second substrate or wafer. Pressure is applied between the two substrates so as to cause a bond to occur between the two mating structures at the bonding or eutectic layer.

Abstract: An optical switch that any vibration or oscillation transmitted to the optical switch from the outside is substantially prevented from being transmitted to a movable electrode is provided. In an optical switch comprising: a stationary electrode; a movable electrode opposed to the stationary electrode with a predetermined space therebetween; and a mirror mounted to the movable electrode, wherein the movable electrode and the mirror are moved together by applying a voltage between the stationary electrode and the movable electrode thereby to switch the path of an incident optical signal to the optical switch, a buffer member provided with a diaphragm is attached to the bottom of the stationary electrode, and a vibration or oscillation is substantially prevented from being transmitted to the movable electrode by the damping effects of the diaphragm and the space area formed above the diaphragm.

Abstract: A method of making a micro electromechanical gyroscope. A cantilevered beam structure, first portions of side drive electrodes and a mating structure are defined on a first substrate or wafer; and at least one contact structure, second portions of the side drive electrodes and a mating structure are defined on a second substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer and the first and second portions of the side drive electrodes being of a complementary shape to each other. A bonding layer, preferably a eutectic bonding layer, is provided on at least one of the mating structures and one or the first and second portions of the side drive electrodes. The mating structure of the first substrate is moved into a confronting relationship with the mating structure of the second substrate or wafer.

Abstract: A MEMS capping method and apparatus uses a cap structure on which is formed a MEMS cavity, a cut capture cavity, and a cap wall. The cap wall is essentially the outer wall of the MEMS cavity and the inner wall of the cut capture cavity. The cap structure is bonded onto a MEMS structure such that the MEMS cavity covers protected MEMS components. The cap structure is trimmed by cutting through to the cut capture cavity from the top of the cap structure without cutting all the way through to the MEMS structure.

Abstract: Electro-mechanical structures and methods for forming same are disclosed. The structures are integratable onto an integrated circuit. The structures have a deformeable element formed in a plane substantially perpendicular to the substrate of the integrated circuit.

Abstract: The method for producing a micromechanical component includes the following steps: producing a semi-finished micromechanical component; producing openings and forming a cavity; sealing the opening with sealing lids; removing material on the top surface of the first membrane layer, the surface of the first membrane layer being exposed and planarized. The invention also relates to a micromechanical component which can be produced according to the above method and to its use in sensors such as pressure sensors, microphones, or acceleration sensors.

Abstract: A release layer composed of AlGaAs, a strain layer, a strain compensation layer composed of an InGaAs, and a component layer are formed on a GaAs substrate. The component layer includes a DBR film. A recess for defining a bent region is formed in the component layer. The component layer, the strain compensation layer, the strain layer, and the release layer are removed in an approximately U shape, thereby forming a groove. The release layer under the strain layer is selectively removed. The strain layer is bent at a region below the recess so as to relax strain caused by the difference in the lattice constant between the InGaAs layer and the GaAs layer, and the component layer stands perpendicularly to the GaAs substrate.

Abstract: The present invention provides a method and product-by-method of integrating a bias resistor in circuit with a bottom electrode of a micro-electromechanical switch on a silicon substrate. The resistor and bottom electrode are formed simultaneously by first sequentially depositing a layer of a resistor material (320), a hard mask material (330) and a metal material (340) on a silicon substrate forming a stack. The bottom electrode and resistor lengths are subsequently patterned and etched (350) followed by a second etching (360) process to remove the hard mask and metal materials from the defined resistor length. Finally, in a preferred embodiment, the bottom electrode and resistor structure is encapsulated with a layer of dielectric which is patterned and etched (370) to correspond to the defined bottom electrode and resistor.

Abstract: The present invention provides an apparatus and method of selecting a unique combination of materials and dimensions for fabrication of a micro-electromechanical switch for improved RF switch performance. An electrode material is selected which exhibits a resistivity resulting in improved insertion loss for a predetermined switching speed, a dielectric material is selected which exhibits a permittivity resulting in improved isolation, and an airgap thickness is selected resulting in a pull-down voltage approximately equal to a supply voltage of the micro-electromechanical switch in which the isolation and predetermined switching speed are also functions of the airgap thickness.

Abstract: A semiconductor strain sensor in which a sensor element for detecting a strain signal is mounted in a resin package member, which can restrain a creep stress of the package member from affecting to the sensor element. A semiconductor strain sensor is provided with a lead frame integrally molded with a resin package member, and a sensor chip made of silicon. The sensor chip is mounted on one surface of an element mounting portion of the lead frame, and is capable of externally outputting electric signal via a wire in accordance with strain when pressure is applied. An opening portion is provided in the package member, so that the entire area of another surface of the lead frame, where positions beneath the sensor chip, is non-contacted with the package member.

Abstract: A microelectromechanical system (MEMS) device is disclosed for determining the position of a mover. The MEMS device has a bottom layer connected to a mover layer. The mover layer is connected to a mover by flexures. The mover moves relative to the mover layer and the bottom layer. The flexures urge the mover back to an initial position of mechanical equilibrium. The flexures include coupling blocks to control movement of the mover. The MEMS device determines the location of the mover by determining the capacitance between mover electrodes located on the coupling blocks of the flexures and counter electrodes located on an adjacent layer. The coupling block moves according to a determinable relationship with the mover. As the coupling block moves, the capacitance between the mover electrode and the counter electrode changes. A capacitance detector analyzes the capacitance between the electrodes and determines the position of the mover.

Abstract: A semiconductor device in accordance with the present invention includes a semiconductor element chip pressed and secured on a distortion die-pad so that the semiconductor element chip, sealed inside a package, is held in a predetermined distorted state. The predetermined distorted state is preferably downward or upward warping. The semiconductor element chip operates normally in the distorted state, and does not operate normally when the semiconductor element chip is separated from the semiconductor device, and thereby released from the distortion and laid alone. This ensures that the semiconductor element chip is protected from circuit analysis.

Abstract: The invention relates to a semiconductor optical amplifier including a buried guide active structure (12), characterized in that the guide active structure (12) is subjected to an external stress to render the gain of said amplifier insensitive to the polarization of the light to be amplified, said external stress coming from a force induced by a deposit of a material (50) against a ridge (15) surrounding said guide active structure (12).

Abstract: A device, having at least one micromechanical surface structure patterned on a silicon substrate and a cap wafer covering the at least one surface structure. The cap wafer is formed from a glass wafer.

Abstract: A micromechanical cap structure and a corresponding manufacturing method are described, the cap structure having a substrate, in particular in the form of a wafer, having a cavity made therein. The cavity includes a bottom surface and two pairs of opposite parallel side wall sections. The cavity has at least one stabilizing wall section, which connects two side wall sections. This considerably increases the stability of the cap structure.

Abstract: A lower electrode 4 of a substrate 1 is continuously formed from a thin diaphragm portion 3 to a thick region 2, and independently of the lower electrode 4, an auxiliary electrode 8 is formed on the thick region 2 of the substrate 1, whereby a piezoelectric/electrostrictive film 5 is formed across the lower electrode 4 and the auxiliary electrode 8. An incomplete bonding portion of the piezoelectric/electrostrictive film 5 to the substrate 1 is eliminated on the thin diaphragm portion 3, thereby making it possible to reduce significantly a variation in vibration form.

Abstract: A semiconductor sensor chip is provided with a weight portion supported in a frame via beams whereby acceleration up to substantially ±1 G can be detected by utilizing piezoresistance effect of resistor elements formed on the beams. The semiconductor sensor chip is supported by a seat having a thermal expansion coefficient equivalent to that of the semiconductor sensor chip via the frame. The frame and the seat are adhered to each other by a flexible adhesive agent mixed with a plurality of resin beads functioning as spacers and under an adhesion state, air damping of the weight portion is carried out by setting a dimension of an air gap between the weight portion and the seat to a range of 7 through 15 &mgr;m.

Abstract: A pressure transducer designed to transform static pressure or dynamic pressure applied to a diaphragm into a corresponding electrical signal and a method of manufacturing the same are provided. The transducer includes a fixed electrode formed in an upper surface of a substrate and a moving electrode provided in the diaphragm disposed above the fixed electrode through a cavity. The substrate has formed in the bottom thereof at least one hole which is used in a manufacturing process for removing a sacrificial layer formed between the diaphragm and the upper surface of the substrate in dry etching to form the cavity.

Abstract: MEMS Device having an Actuator with Curved Electrodes. According to one embodiment of the present invention, an actuator is provided for moving an actuating device linearly. The actuator includes a substrate having a planar surface and an actuating device movable in a linear direction relative to the substrate. The actuator includes at least one electrode beam attached to the actuating device and having an end attached to the substrate. The electrode beam is flexible between the actuating device and the end of the electrode beam attached to the substrate. Furthermore, the actuator includes at least one electrode attached to the substrate. The electrode has a curved surface aligned in a position adjacent the length of the electrode beam, whereby the actuating device is movable in its substantially linear direction as the electrode beam moves in a curved fashion corresponding substantially to the curved surface of the electrode.

Abstract: A suspended micromachined structure including a proof mass and multiple support arms configured to suspend the mass above a substrate. At least one support arm may include two spring elements, each attached to the substrate as well as to a rigid lateral element. Thus, there may be three points of attachment along each lateral element. These points of attachment create three effective flexure points along each rigid lateral element that allow the proof mass to move with a great deal of freedom axially, parallel to the substrate. The linearity of the spring constant that acts on the proof mass may be improved.

Abstract: A micro-mechanical actuator is disclosed for actuating an object in a micro-electro-mechanical system. One end of the object is flexibly connected a substrate, and another end is flexibly connected to an auxiliary lever which is further connected to an actuating force generator. The auxiliary lever receives an actuating force generated from the actuating force generator to perform a levering operation about a fulcrum. The position of the fulcrum allows an portion of the auxiliary lever connected to the object has a shift larger than a shift of another portion of the auxiliary lever connected to the actuating force generator in response to the actuating force.

Abstract: A sensor device that provides a relatively uniform electric field between a diaphragm and a substrate, regardless of the displacement of the diaphragm is disclosed. The sensor device provides a uniform spacing between the diaphragm and the substrate over a selected range of diaphragm displacements. A double layer diaphragm is disclosed that includes an upper support member and a lower electrode plate. The lower electrode plate is attached to the upper support member by a post member, and the post member is only attached to the center region of the support member. In another embodiment, an electro-mechanically controlled switch sensor is provided that uses an electrostatic force between the diaphragm and the substrate to produce a bi-stable snapping action.

Abstract: A substrate for an electronic circuit, the substrate comprising a wafer of silicon Si having a top face covered in an electrically insulating layer of silicon nitride SiN, said electrically insulating layer of silicon nitride supporting one or more conductive tracks obtained by metallizing the top face of said electrically insulating layer for the purpose of enabling one or more electronic components to be connected.

Abstract: A micromechanical structure, such as a sensor, includes a substrate, a diaphragm, a cavity, a sacrificial layer and a terminating structure. The terminating structure is cut away in the region of the diaphragm in such a way that a media opening is located above the diaphragm. The diameter of the cavity is smaller over the entire circumference of the cavity than the diameter of the opening. A method for manufacturing the micromechanical structure is also provided.

Abstract: The present invention is a semiconductor device capable of relieving thermal stress without breaking wire. It comprises a semiconductor chip (12), a solder ball (20) for external connection, wiring (18) for electrically connecting the semiconductor chip (12) and the solder ball (20), a stress relieving layer (16) provided on the semiconductor chip (12), and a stress transmission portion (22) for transmitting stress from the solder ball (20) to the stress relieving layer (16) in a peripheral position of an electrical connection portion (24a) of the solder ball (20) and wiring (18).

Abstract: In one aspect, the invention provides a semiconductor sensor which includes a first single crystal silicon wafer layer. A single crystal silicon structure is formed in the first wafer layer. The structure includes two oppositely disposed substantially vertical major surfaces and two oppositely disposed generally horizontal minor surfaces. The aspect ratio of major surface to minor surface is at least 5:1. A carrier which includes a recessed region is secured to the first wafer layer such that said structure is suspended opposite the recessed region.

Abstract: The pressure sensor component has a chip carrier carrying a semiconductor chip with an integrated pressure sensor having a pressure-detecting surface exposed to the pressure to be measured. A device encapsulation made from an electrically insulating material surrounds the entire assembly except for protruding electrode terminals. Bond wires connect the electrode terminals with the pressure sensor and/or the electronic circuit of the semiconductor chip. The device encapsulation consists entirely of a homogeneous pressure-transmitting medium comprising an enveloping compound, which transmits the pressure to be measured as free from delay and attenuation as possible but is mechanically resistant and dimensionally stable. The pressure to be measured is transmitted directly by the enveloping compound onto the pressure-detecting surface of the semiconductor chip, and the pressure sensor and/or the pressure sensor component is covered tightly on all sides against mechanical and/or chemical influences.

Abstract: A method of modifying the mobility of a transistor. First, a transistor having a gate is formed. A substance is then implanted in the gate. The transistor is annealed such that the implanted substance forms at least one void in the transistor's gate.

Abstract: A carrier structure for semiconductor transducers is disclosed. The carrier structure mounts as a single unit to a force-impacted base substrate and includes multiple piezoresistive elements integrally formed with the carrier structure, such that the elements are located on a predetermined elevation level as the carrier structure while maintaining their electrical contacts and their precise positions by using metal traces on a silicon substrate among the piezoresistive elements and bonding wires between the structure the elements.

Abstract: A semiconductor pressure sensor includes a semiconductor substrate having a diaphragm portion. A diaphragm formation region including the diaphragm portion is electrically insulated from a peripheral region therearound. Voltage is applied to the diaphragm formation region via a pad and a wire both formed on a surface of the semiconductor substrate, for fixing a potential of the diaphragm formation region when the sensor is put in an operating state. The fixed potential is set to be equal to or higher than a maximum potential of a gauge diffusion resistive layer formed in the diaphragm formation region. As a result, even when the maximum potential of the gauge diffusion resistive layer is a power supply voltage, it can be prevented that current leaks from the gauge diffusion resistive layer.

Abstract: A probe is provided with a thermocouple made of a joint between a first metal material and a second metal material. The first metal material is formed on the surface of a flexible plate facing a substrate, continuously from the thermocouple portion. The surface of the flexible plate facing the substrate is formed with a first wiring conductive film, which is electrically connected to the first metal material and extends over the proximal end side area of the flexible plate.

Abstract: A semiconductor strain sensor comprises a semiconductor cantilever probe having a free end and a surface portion for undergoing deformation due to a displacement of the free end. A Schottky junction is disposed on the surface portion of the semiconductor cantilever probe and is positioned to undergo a change in electrical characteristic in response to the deformation of the surface portion. The amount of displacement of the free end of the cantilever probe is detected on the basis of a change in the electrical characteristic of the Schottky junction.