With Optical Element Patents (Class 257/432)
  • Patent number: 11329091
    Abstract: A back-illuminated type solid-state image pickup unit in which a pad wiring line is provided on a light reception surface and which is capable of improving light reception characteristics in a photoelectric conversion section by having a thinner insulating film in a pixel region. The solid-state image pickup unit includes a sensor substrate having a pixel region in which photoelectric conversion sections are formed in an array, and a drive circuit is provided on a surface opposed to a light reception surface for the photoelectric conversion sections of the sensor substrate. A through hole via reaching the drive circuit from the light reception surface of the sensor substrate is provided in a peripheral region located outside the pixel region. A pad wiring line directly laminated on the through hole via is provided on the light reception surface in the peripheral region.
    Type: Grant
    Filed: May 15, 2019
    Date of Patent: May 10, 2022
    Assignee: SONY CORPORATION
    Inventor: Kentaro Akiyama
  • Patent number: 11327276
    Abstract: A multi-axis MEMS assembly includes a micro-electrical-mechanical system (MEMS) actuator configured to provide linear three-axis movement. The micro-electrical-mechanical system (MEMS) actuator includes: an in-plane MEMS actuator, and an out-of-plane MEMS actuator. An optoelectronic device is coupled to the micro-electrical-mechanical system (MEMS) actuator. The out-of-plane MEMS actuator includes a multi-morph piezoelectric actuator.
    Type: Grant
    Filed: January 24, 2019
    Date of Patent: May 10, 2022
    Assignee: MEMS DRIVE (NANJING) CO., LTD.
    Inventors: Guiqin Wang, Xiaolei Liu, Matthew Ng
  • Patent number: 11322532
    Abstract: The backside illuminated image sensor comprises a substrate of semiconductor material, detector elements arranged at a main surface, a dielectric layer on or above the main surface, a first capacitor layer and a second capacitor layer above the main surface, the capacitor layers forming a capacitor (C1, C2). A peripheral circuit is integrated in the substrate apart from the detector elements, the peripheral circuit being configured for one or more operations of the group consisting of voltage regulation, charge pump operation and stabilization of clock generation, and the capacitor layers are electrically connected with contact regions of the peripheral circuit.
    Type: Grant
    Filed: May 7, 2018
    Date of Patent: May 3, 2022
    Assignee: AMSAG
    Inventor: Guy Meynants
  • Patent number: 11323608
    Abstract: An image sensor pixel array comprises a plurality of image pixel units to gather image information and a plurality of phase detection auto-focus (PDAF) pixel units to gather phase information. Each of the PDAF pixel units includes two of first image sensor pixels covered by two micro-lenses, respectively. Each of the image pixel units includes four of second image sensor pixels adjacent to each other, wherein each of the second image sensor pixels is covered by an individual micro-lens. A coating layer is disposed on the micro-lenses and forms a flattened surface across the whole image sensor pixel array. A PDAF micro-lens is formed on the coating layer to cover the first image sensor pixels.
    Type: Grant
    Filed: October 10, 2019
    Date of Patent: May 3, 2022
    Assignee: OmniVision Technologies, Inc.
    Inventors: Chin Poh Pang, Chen-Wei Lu, Shao-Fan Kao, Chun-Yung Ai, Yin Qian, Dyson Tai, Qingwei Shan, Lindsay Grant
  • Patent number: 11316066
    Abstract: An optical device and a method for fabricating an optical device are described. The optical device may be a light emitting diode (LED) device, e.g. a micro-LED (?LED) device, or a photodiode (PD) device, e.g. an imager. The method comprises processing, on a first semiconductor wafer, an array including a plurality of compound semiconductor LEDs or compound semiconductor PDs and a plurality of first contacts, each first contact being electrically connected to one of the LEDs or PDs. The method further comprises processing, on a second semiconductor wafer, a CMOS IC and a plurality of second contacts electrically connected to the CMOS IC. The method further comprises hybrid bonding the first semiconductor wafer to the second semiconductor wafer such that the plurality of LEDs or PDs are individually connected to the CMOS IC via the first and second contacts.
    Type: Grant
    Filed: December 9, 2019
    Date of Patent: April 26, 2022
    Assignee: IMEC vzw
    Inventors: Soeren Steudel, Alexander Mityashin, Eric Beyne, Maarten Rosmeulen
  • Patent number: 11315966
    Abstract: The present disclosure relates to a solid-state imaging element, a manufacturing method, and an electronic apparatus capable of suppressing an adverse effect of high-order light of diffracted light on image quality. A glass plate material is bonded to a semiconductor substrate on which a pixel region in which a plurality of pixels is arranged is formed so that a gap is not provided between the glass plate material and the pixel region, and a low refractive index layer having a refractive index lower than that of the glass substrate is arranged on a resin layer between a low reflection film formed on a front surface of an on-chip lens arranged for every pixel and the glass plate material. The low refractive index layer is formed by a hole layer that includes a plurality of fine holes having a diameter smaller than a pitch of the pixels and a film that is formed so as to close the plurality of fine holes as hollows.
    Type: Grant
    Filed: September 25, 2018
    Date of Patent: April 26, 2022
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventor: Susumu Ooki
  • Patent number: 11304599
    Abstract: An endoscope includes an objective lens provided at a distal end portion of an insertion portion, an image sensor in which a light receiving area is formed on a surface facing the objective lens, and a drive circuit substrate that is disposed on a back side of the image sensor and includes a drive circuit to drive the image sensor, the endoscope further including an electromagnetic shield that houses the image sensor and the drive circuit substrate, in which the electromagnetic shield includes: a first shield member including a cylinder that covers a side portion of the image sensor, a structure that is disposed between the image sensor and the objective lens and that has an opening that allows entrance of light from the objective lens, and a wiring pattern that is formed on an inner peripheral surface of the cylinder and the structure.
    Type: Grant
    Filed: August 22, 2018
    Date of Patent: April 19, 2022
    Assignee: HOYA CORPORATION
    Inventor: Atsushi Komoro
  • Patent number: 11306388
    Abstract: Sputtering targets including molybdenum, niobium and tantalum are found to be useful for sputtering films for electronic devices. Sputtering targets with about 88 to 97 weight percent molybdenum show improved performance, particularly with respect to etching, such as when simultaneously etching an alloy layer including the Mo, Nb, and Ta, and a metal layer (e.g., an aluminum layer). The targets are particularly useful in manufacturing touch screen devices.
    Type: Grant
    Filed: August 29, 2018
    Date of Patent: April 19, 2022
    Assignee: H.C. STARCK INC.
    Inventors: Shuwei Sun, Gary Alan Rozak, Qi Zhang, Barbara Cox, Yen-Te Lee
  • Patent number: 11303788
    Abstract: The invention provides a camera module of an electronic device, which includes a circuit board, a chip, an image sensor and a connection frame. The chip is arranged on the circuit board, and the image sensor is arranged on the chip. The connection frame is arranged on the periphery of the chip, and the chip is electrically connected with the circuit board by the connection frame, and the image sensor is located in the space surrounded by the connection frame. The invention also provides an electronic device.
    Type: Grant
    Filed: November 12, 2018
    Date of Patent: April 12, 2022
    Assignee: VIVO MOBILE COMMUNICATION CO., LTD.
    Inventor: Jun Yang
  • Patent number: 11297210
    Abstract: A camera module, a method for assembling the camera module, and a mobile terminal are provided. The camera module includes a flexible circuit board; a chip, stacked on the flexible circuit board; an image sensor, stacked on the chip; a connection wire, where one end of the connection wire is connected to a wiring region of the flexible circuit board, the other end of the connection wire is connected to an interface region of a first surface of the chip, and the first surface is a surface of the chip away from the flexible circuit board; and a first protective structure, arranged on the interface region of the first surface of the chip.
    Type: Grant
    Filed: January 25, 2019
    Date of Patent: April 5, 2022
    Assignee: VIVO MOBILE COMMUNICATION CO., LTD.
    Inventor: Jun Yang
  • Patent number: 11297271
    Abstract: An image sensor comprising pixels each includes, an photoelectric conversion unit, a first inner-layer lens, a second inner-layer lens, and an on-chip microlens. A light-shielding wall around the second inner-layer lens is provided between adjacent pixels. A first positional difference between center positions of the first inner-layer lens and the photoelectric conversion unit, a second positional difference between center positions of the second inner-layer lens and the photoelectric conversion unit, and a third positional difference between center positions of the on-chip microlens and the photoelectric conversion unit satisfy: the second positional difference<the first positional difference<the third positional difference.
    Type: Grant
    Filed: January 29, 2020
    Date of Patent: April 5, 2022
    Assignee: Canon Kabushiki Kaisha
    Inventors: Shunichi Wakashima, Koichi Fukuda, Kohei Okamoto
  • Patent number: 11296252
    Abstract: Methods and apparatus for forming a bond pad of a semiconductor device such as a backside illuminated (BSI) image sensor device are disclosed. The substrate of a device may have an opening at the backside, through the substrate reaching the first metal layer at the front side of the device. A buffer layer may be formed above the backside of the substrate and covering sidewalls of the substrate opening. A pad metal layer may be formed above the buffer layer and in contact with the first metal layer at the bottom of the substrate opening. A bond pad may be formed in contact with the pad metal layer. The bond pad is connected to the pad metal layer vertically above the substrate, and further connected to the first metal layer of the device at the opening of the substrate.
    Type: Grant
    Filed: July 31, 2018
    Date of Patent: April 5, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventor: Ching-Hung Cheng
  • Patent number: 11296133
    Abstract: There is provided an imaging apparatus including: a solid state image sensor configured to generate a pixel signal by photoelectric conversion in accordance with a light amount of an incoming light; an integrated configuration unit configured to integrate a function for fixing the solid state image sensor and a function for removing an infrared light of the incoming light.
    Type: Grant
    Filed: May 15, 2018
    Date of Patent: April 5, 2022
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Katsuji Kimura, Atsushi Yamamoto
  • Patent number: 11289522
    Abstract: According to an aspect, an image sensor package includes a transparent member, a substrate, and an interposer disposed between and coupled to the transparent member and the substrate, where the interposer defines a first cavity area and a second cavity area. The image sensor package includes an image sensor die disposed within the first cavity area of the interposer, where the image sensor die has a sensor array configured to receive light through the transparent member and the second cavity area. The image sensor package includes a bonding material that couples the image sensor die to the interposer within the first cavity area.
    Type: Grant
    Filed: July 9, 2019
    Date of Patent: March 29, 2022
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventor: Weng-Jin Wu
  • Patent number: 11282885
    Abstract: A wafer structure, a method for manufacturing the wafer structure, and a chip structure. A front surface of a first chip provided with a photosensitive array is bonded to a front surface of a second chip provided with a logic device. An electrical-connection through-hole is provided on a back surface of the first chip at a pad region. The electrical-connection through-hole runs from the back surface of the first chip, via a top wiring layer in the first chip, to a top wiring layer in the second chip. A pad is provided on the electrical-connection through-hole. Hence, integration of a photosensitive device of a stacked type is achieved. There are advantages of a high integration degree and a simple structure. Transmission efficiency of a device is effectively improved, and complexity of a manufacturing process is reduced.
    Type: Grant
    Filed: September 24, 2019
    Date of Patent: March 22, 2022
    Assignee: Wuhan Xinxin Semiconductor Manufacturing Co., Ltd.
    Inventor: Guomin Zhang
  • Patent number: 11276717
    Abstract: The present disclosure refers to a multispectral image sensor and a manufacturing method thereof. The multispectral image sensor comprises a front-end structure used for photoelectric conversion and processing, and a pixel layer provided on the front-end structure. The pixel layer comprises N pixel units, and N?4, the pixel units are arranged in a plurality of arrays, a photosensitive wavelength of each pixel unit in each array is different. Whereby, multispectrals can be detected simultaneously, and therefore the efficiency is improved, costs are reduced, and miniaturization is achieved.
    Type: Grant
    Filed: June 6, 2017
    Date of Patent: March 15, 2022
    Assignees: SHANGHAI IC R&D CENTER CO., LTD., CHENGDU IMAGE DESIGN TECHNOLOGY CO., LTD.
    Inventor: Yong Wang
  • Patent number: 11276724
    Abstract: Implementations of semiconductor packages may include: a semiconductor die having a first side and a second side and an active area on the second side of the die. The semiconductor packages may also include two or more bumps coupled to two or more die pads on a second side of the die. The semiconductor packages may include an optically transmissive lid coupled to the semiconductor die through an adhesive, two or more bumps, and a first redistribution layer (RDL). The semiconductor package may include a second redistribution layer (RDL) coupled with the first RDL on the second side of the semiconductor die. The second RDL may extend to the first side of the semiconductor die. The first RDL may extend to an edge of the semiconductor die.
    Type: Grant
    Filed: June 27, 2019
    Date of Patent: March 15, 2022
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventor: Shou-Chian Hsu
  • Patent number: 11271025
    Abstract: A solid-state imaging device includes a semiconductor layer on which a plurality of pixels are arranged along a light-receiving surface being a main surface of the semiconductor layer, photoelectric conversion units provided for the respective pixels in the semiconductor layer, and a trench element isolation area formed by providing an insulating layer in a trench pattern formed on a light-receiving surface side of the semiconductor layer, the trench element isolation area being provided at a position displaced from a pixel boundary between the pixels.
    Type: Grant
    Filed: March 13, 2020
    Date of Patent: March 8, 2022
    Assignee: SONY CORPORATION
    Inventor: Hiromi Okazaki
  • Patent number: 11269155
    Abstract: Provided is an imaging apparatus having: an imaging optical system including at least one optical element; an image sensor configured to capture an object image formed by the imaging optical system; a substrate on which an image sensor is mounted; a holding member configured to hold the imaging optical system, the holding member including a substrate bonding face that is bonded to the substrate; a first bonding member configured to bond at least a part of a first face of the substrate, that faces the substrate bonding face, to the substrate bonding face; and a second bonding member configured to bond at least a part of a second face of the substrate, that is opposite to the first face of the substrate, to the substrate bonding face.
    Type: Grant
    Filed: September 3, 2018
    Date of Patent: March 8, 2022
    Assignee: KYOCERA Corporation
    Inventors: Nobuo Kitamura, Takahiro Okada
  • Patent number: 11270138
    Abstract: The invention describes a device (1) and a method (100) for bio metric identification of an object with a significantly improved signal-to-noise ratio.
    Type: Grant
    Filed: October 17, 2018
    Date of Patent: March 8, 2022
    Assignee: Lumileds LLC
    Inventors: Erno Fancsali, Rob Engelen
  • Patent number: 11264552
    Abstract: The light emitting device includes: a light emitting element, a covering member, a pair of electrode layers, and a pair of electrode terminals. The light emitting element has an electrode-formed surface on which a pair of electrode posts are formed. The covering member covers an electrode-formed surface of the light emitting element while forming an exposed portion of each of the pair of electrode posts which is exposed from the covering member. The pair of electrode layers are provided on a surface of the covering member and electrically connected to the exposed portions of the pair of electrode posts. The pair of electrode terminals are electrically connected to the pair of electrode layers, and provided on the surface of the covering member. The pair of electrode terminals are thicker than the pair of electrode layers, and are disposed at an interval larger than an interval between the pair of electrode posts.
    Type: Grant
    Filed: October 31, 2019
    Date of Patent: March 1, 2022
    Assignee: NICHIA CORPORATION
    Inventors: Shinichi Daikoku, Toru Hashimoto
  • Patent number: 11264421
    Abstract: The present disclosure discloses a method for manufacturing a backside-illuminated CMOS image sensor structure, the method comprises: providing a silicon substrate which has been subjected to a frontside processing and a back thinning; forming grid-shaped deep trenchs on the back of the silicon substrate; forming an insulating layer on the inner wall surface of the deep trenchs to form a grid-shaped deep trenchs isolation structure; forming a diffusion barrier layer on the surface of the insulating layer; filling metal in the deep trenchs to form a grid-shaped composite structure in which the Metal grid is combined with the deep trenchs isolation structure.
    Type: Grant
    Filed: August 29, 2018
    Date of Patent: March 1, 2022
    Assignee: SHANGHAI IC R&D CENTER CO., LTD.
    Inventor: Xingchen Ge
  • Patent number: 11263978
    Abstract: A display device comprises a substrate, a data link line, a power link line, and a dummy pattern. The substrate includes a display area in which pixels are arranged and a non-display area outside the display area. The data link line is positioned in the non-display area to deliver a predetermined signal to the pixels. The power link line is spaced apart from the data link line at a predetermined distance in the non-display area and delivers a predetermined power to the pixels. The dummy pattern is positioned between the data link line and the power link line in the non-display area.
    Type: Grant
    Filed: September 25, 2019
    Date of Patent: March 1, 2022
    Assignee: LG Display Co., Ltd.
    Inventors: Boeun Jo, Sangho Kim, Taekyoung Kim
  • Patent number: 11257997
    Abstract: A semiconductor structure is provided. The semiconductor structure includes metallization structure, a plurality of conductive pads, and a dielectric layer. The plurality of conductive pads is over the metallization structure. The dielectric layer is on the metallization structure and covers the conductive pad. The dielectric layer includes a first dielectric film, a second dielectric film, and a third dielectric film. The first dielectric film is on the conductive pad. The second dielectric film is on the first dielectric film. The third dielectric film is on the second dielectric film. The a refractive index of the first dielectric film is smaller than a refractive index of the second dielectric film, and the refractive index of the second dielectric film is smaller than a refractive index of the third dielectric film.
    Type: Grant
    Filed: December 31, 2019
    Date of Patent: February 22, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chia-Hua Lin, Yao-Wen Chang, Chii-Ming Wu, Cheng-Yuan Tsai, Eugene I-Chun Chen, Tzu-Chung Tsai
  • Patent number: 11252315
    Abstract: In a pixel 110, a microlens layer 112 includes a microlens for each pixel region. A color filter layer 114 allows passage of light of a given color. A polarizer layer 116 includes a polarizer that allows passage of a polarization component in a given direction in some or all pixel regions and acquires a normal vector of a subject through a detection value thereof. A photoelectric conversion layer 118 includes a plurality of photodiodes in the pixel regions. A distance to a feature point of the subject is acquired through phase difference based on the detection value.
    Type: Grant
    Filed: August 4, 2017
    Date of Patent: February 15, 2022
    Assignee: SONY INTERACTIVE ENTERTAINMENT INC.
    Inventor: Masashi Nakata
  • Patent number: 11252360
    Abstract: The present disclosure relates to a solid-state image pickup device and an electronic apparatus by which a phase-difference detection pixel that avoids defects such as lowering of sensitivity to incident light and lowering of phase-difference detection accuracy can be realized. A solid-state image pickup device as a first aspect of the present disclosure is a solid-state image pickup device in which a normal pixel that generates a pixel signal of an image and a phase-difference detection pixel that generates a pixel signal used in calculation of a phase-difference signal for controlling an image-surface phase difference AF function are arranged in a mixed manner, in which, in the phase-difference detection pixel, a shared on-chip lens for condensing incident light to a photoelectric converter that generates a pixel signal used in calculation of the phase-difference signal is formed for every plurality of adjacent phase-difference detection pixels.
    Type: Grant
    Filed: March 4, 2019
    Date of Patent: February 15, 2022
    Assignee: Sony Corporation
    Inventors: Sozo Yokogawa, Isao Hirota
  • Patent number: 11244979
    Abstract: A semiconductor structure for a CMOS image sensor includes a semiconductor substrate having a first side and a second side. A photodiode is disposed in the semiconductor substrate proximate to the first side. The photodiode accumulates image charge photogenerated in the photodiode in response to incident light directed through the second side. A deep trench isolation structure enclosing the photodiode. The deep trench isolation structure extends from the second side toward the first side. The deep trench isolation structure includes a light absorption region disposed at a first end of the deep trench isolation structure toward the first side.
    Type: Grant
    Filed: December 19, 2019
    Date of Patent: February 8, 2022
    Assignee: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Hui Zang, Gang Chen
  • Patent number: 11237328
    Abstract: An optical mode converter is disclosed. The optical mode converter includes a substrate and a luminescent layer on the substrate. The luminescent layer includes an optical waveguide and an inclined mirror at an end of the optical waveguide. A light signal passes through the optical waveguide and is reflected by the inclined mirror to penetrate into the substrate. A method for manufacturing the optical mode converter is also disclosed.
    Type: Grant
    Filed: November 19, 2020
    Date of Patent: February 1, 2022
    Assignee: NATIONAL SUN YAT-SEN UNIVERSITY
    Inventors: Chen-Yu Weng, Yi-Jen Chiu, Yang-Jeng Chen, Rih-You Chen, Chung-Wei Hsiao, Wei Lin
  • Patent number: 11237326
    Abstract: An integrated device and related instruments and systems for analyzing samples in parallel are described. The integrated device may include sample wells arranged on a surface of where individual sample wells are configured to receive a sample labeled with at least one fluorescent marker configured to emit emission light in response to excitation light. The integrated device may further include photodetectors positioned in a layer of the integrated device, where one or more photodetectors are positioned to receive a photon of emission light emitted from a sample well. The integrated device further includes one or more photonic structures positioned between the sample wells and the photodetectors, where the one or more photonic structures are configured to attenuate the excitation light relative to the emission light such that a signal generated by the one or more photodetectors indicates detection of photons of emission light.
    Type: Grant
    Filed: July 23, 2018
    Date of Patent: February 1, 2022
    Assignee: Quantum-Si Incorporated
    Inventors: Jonathan M. Rothberg, Gerard Schmid, Alexander Gondarenko, James Beach, Kyle Preston, Farshid Ghasemi, Jeremy Lackey, Jack Jewell, Keith G. Fife, Ali Kabiri
  • Patent number: 11233081
    Abstract: In some embodiments, an image sensor is provided. The image sensor includes a photodetector disposed in a semiconductor substrate. A wave guide filter having a substantially planar upper surface is disposed over the photodetector. The wave guide filter includes a light filter disposed in a light filter grid structure. The light filter includes a first material that is translucent and has a first refractive index. The light filter grid structure includes a second material that is translucent and has a second refractive index less than the first refractive index.
    Type: Grant
    Filed: May 20, 2019
    Date of Patent: January 25, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cheng Yu Huang, Chun-Hao Chuang, Chien-Hsien Tseng, Kazuaki Hashimoto, Keng-Yu Chou, Wei-Chieh Chiang, Wen-Chien Yu, Ting-Cheng Chang, Wen-Hau Wu, Chih-Kung Chang
  • Patent number: 11227889
    Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes an image sensing element disposed within a semiconductor substrate. One or more isolation structures are arranged within one or more trenches disposed along a first surface of the semiconductor substrate. The one or more isolation structures are separated from opposing sides of the image sensing element by non-zero distances. The one or more trenches are defined by sidewalls and a horizontally extending surface of the semiconductor substrate. A doped region is laterally arranged between the sidewalls of the semiconductor substrate defining the one or more trenches and is vertically arranged between the image sensing element and the first surface of the semiconductor substrate.
    Type: Grant
    Filed: November 5, 2019
    Date of Patent: January 18, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Yuan Chen, Ching-Chun Wang, Dun-Nian Yaung, Hsiao-Hui Tseng, Jhy-Jyi Sze, Shyh-Fann Ting, Tzu-Jui Wang, Yen-Ting Chiang, Yu-Jen Wang, Yuichiro Yamashita
  • Patent number: 11223789
    Abstract: A driving method of a semiconductor device that takes three-dimensional images with short duration is provided. In a first step, a light source starts to emit light, and first potential corresponding to the total amount of light received by a first photoelectric conversion element and a second photoelectric conversion element is written to a first charge accumulation region. In a second step, the light source stops emitting light and second potential corresponding to the total amount of light received by the first photoelectric conversion element and the second photoelectric conversion element is written to a second charge accumulation region. In a third step, first data corresponding to the potential written to the first charge accumulation region is read. In a fourth step, second data corresponding to the potential written to the second charge accumulation region is read.
    Type: Grant
    Filed: November 25, 2019
    Date of Patent: January 11, 2022
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Yoshiyuki Kurokawa
  • Patent number: 11222810
    Abstract: A color filter structure includes a material stack disposed on a substrate, a material stack disposed in the substrate, a first trench penetrating the material stack and exposing a first metal pad, a scribe line trench penetrating the material stack and exposing a scribe line metal pad, a first filling material partially filling the first trench and substantially filling up the scribe line trench, a second filling material partially filling the first trench and the first filling material and the second filling material together substantially fill up the first trench, and a color filter material covering an optical uniform surface which the material stack, the first filling material and the second filling material together form.
    Type: Grant
    Filed: August 9, 2020
    Date of Patent: January 11, 2022
    Assignee: Himax Imaging Limited
    Inventors: Kihong Kim, Yu-Jui Hsieh
  • Patent number: 11217616
    Abstract: An image sensing device includes a substrate layer structured to include photoelectric conversion elements, grid structures disposed over the substrate layer to divide space above the substrate into different sensing regions, and color filter layers disposed over the photoelectric conversion elements between the grid structures. The grid structures includes an air layer, a light guide layer disposed over the air layer, and a capping film configured to cover the air layer and the light guide layer.
    Type: Grant
    Filed: December 5, 2019
    Date of Patent: January 4, 2022
    Assignee: SK hynix Inc.
    Inventor: Young Woong Do
  • Patent number: 11211410
    Abstract: A high degree of phase difference detection accuracy can be obtained using a phase difference pixel with a simpler configuration. A solid-state image-capturing device includes a pixel array unit in which a plurality of pixels including a phase difference pixel which is a pixel for focal point detection and an image-capturing pixel which is a pixel for image generation are arranged in a two-dimensional array. In this case, a predetermined layer between a light shielding layer and a micro lens formed in the image-capturing pixel has a higher refraction index than a refraction index of the predetermined layer formed in the phase difference pixel. The technique of the present disclosure can be applied to, for example, a back-illuminated-type solid-state image-capturing device and the like.
    Type: Grant
    Filed: May 20, 2020
    Date of Patent: December 28, 2021
    Assignee: SONY CORPORATION
    Inventor: Tomohiko Asatsuma
  • Patent number: 11204313
    Abstract: The present disclosure describes a throughput-scalable sensing system. The system includes a plurality of semiconductor dies sharing a common semiconductor substrate and a plurality of transmembrane pore based sensors configured to detect a change of current flow as a result of analyzing biological or chemical samples. Two immediately neighboring transmembrane pore based sensors are arranged on respective two semiconductor dies separated by a dicing street. Each transmembrane pore based sensor is arranged on a separate semiconductor die of the plurality of semiconductor dies. At least one transmembrane pore based sensor includes one or more detection electrodes disposed above the common semiconductor substrate and a lipid bilayer disposed above the one or more detection electrodes.
    Type: Grant
    Filed: April 30, 2021
    Date of Patent: December 21, 2021
    Assignee: GENESENSE TECHNOLOGY INC.
    Inventor: Mei Yan
  • Patent number: 11199892
    Abstract: An electro-optic module provides electro-optic signal drivers formed upon a semiconductor carrier having electrically conducting traces and passive circuit network filtering elements of electroceramic material with the electro-optic signal drivers being in electrical communication with the passive circuit elements and interface the module within a larger computing or communications system.
    Type: Grant
    Filed: December 30, 2019
    Date of Patent: December 14, 2021
    Inventor: L. Pierre de Rochemont
  • Patent number: 11196983
    Abstract: An imaging system includes a light source that, in operation, emits an emitted light containing a near-infrared light in a first wavelength region, an image sensor, and a double-band pass filter that transmits a visible light in at least a part of a wavelength region out of a visible region and the near-infrared light in the first wavelength region. The image sensor includes light detection cells, a first filter that selectively transmits the near-infrared light in the first wavelength region, second to fourth filters that selectively transmit lights in second to fourth wavelength regions, respectively, which are contained in the visible light, and an infrared absorption filter. The infrared absorption filter faces the second to fourth filters and absorbs the near-infrared light in the first wavelength region.
    Type: Grant
    Filed: November 5, 2019
    Date of Patent: December 7, 2021
    Assignee: PANASONIC INIELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventor: Hisashi Watanabe
  • Patent number: 11189743
    Abstract: A photodetector includes: a substrate; a first semiconductor region, the first semiconductor region extending into the substrate from a front side of the substrate; and a second semiconductor region, the second semiconductor region further extending into the substrate from a bottom boundary of the first semiconductor region, wherein when the photodetector operates under a Geiger mode, the second semiconductor region is fully depleted to absorb a radiation source received from a back side of the substrate.
    Type: Grant
    Filed: March 13, 2020
    Date of Patent: November 30, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chia-Yu Wei, Yu-Ting Kao, Yen-Liang Lin, Wen-I Hsu, Hsun-Ying Huang, Kuo-Cheng Lee, Hsin-Chi Chen
  • Patent number: 11181673
    Abstract: Disclosed are an optical filter including a near infrared absorption layer on a polymer film. The polymer film has a* of about ?5.0 to about +5.0 and b* of about ?5.0 to about +5.0 in a color coordinate expressed by a CIE Lab color space. The near infrared absorption layer may be configured to transmit light in a visible region and to selectively absorb at least one part of light in a near infrared region. The near infrared absorption layer includes a first near infrared absorption material including a copper phosphate ester compound and a second near infrared absorption material including at least two different organic dyes. The second near infrared absorption material has a maximum absorption wavelength (?max) in a wavelength region of about 650 nm to about 1200 nm. An electronic device may include the optical filter.
    Type: Grant
    Filed: October 30, 2018
    Date of Patent: November 23, 2021
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jong Hoon Won, Changki Kim, Hyung Jun Kim, Yong Joo Lee, Myungsup Jung
  • Patent number: 11175219
    Abstract: The present disclosure describes a throughput-scalable photon sensing system. The system includes a plurality of semiconductor dies sharing a common semiconductor substrate and a plurality of photon detection sensors configured to perform a single molecule analysis of biological or chemical samples. Two immediately neighboring photon detection sensors are arranged on respective two semiconductor dies separated by a dicing street. Each photon detection sensor is arranged on a separate semiconductor die. The system further includes a first optical waveguide, a plurality of second optical waveguides disposed above the first optical waveguide, one or more wells disposed in the plurality of second optical waveguides, and one or more light guiding channels.
    Type: Grant
    Filed: April 30, 2021
    Date of Patent: November 16, 2021
    Assignee: GENESENSE TECHNOLOGY INC.
    Inventor: Mei Yan
  • Patent number: 11177305
    Abstract: A method includes depositing a first reflective layer over a substrate. A first dielectric layer is deposited over the first reflective layer. A second dielectric layer is deposited over the first dielectric layer. The second dielectric layer, the first dielectric layer, and the first reflective layer are etched to form a grid isolation structure that defines a recess. The recess is filled with a color filter.
    Type: Grant
    Filed: November 18, 2019
    Date of Patent: November 16, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yun-Wei Cheng, Yin-Chieh Huang, Chun-Hao Chou, Kuo-Cheng Lee, Hsun-Ying Huang
  • Patent number: 11169335
    Abstract: Provided are a slim connector plug capable of transmitting and receiving a large amount of data at an ultra-high speed and implementing a miniaturized and slimmed structure with a thickness of 1 mm while being manufactured at low cost, and an active optical cable (AOC) assembly using the same. The connector plug includes: an optical sub-assembly in which an optical fiber seating groove on which an optical fiber is mounted is formed on one side of the optical sub-assembly and a reflective surface is formed on an inner end of the optical fiber seating groove; an optical element module having an optical engine stacked on the optical sub-assembly and generating an optical signal or receiving an optical signal; and an optical component installed on the reflective surface of the OSA and transmitting the optical signal between the optical fiber and the optical engine.
    Type: Grant
    Filed: February 22, 2018
    Date of Patent: November 9, 2021
    Assignee: LIPAC CO., LTD.
    Inventor: Sang Don Lee
  • Patent number: 11163214
    Abstract: A camera module includes a circuit board; a photosensitive chip located on the circuit board and electrically coupled to the circuit board, a package material body arranged on the circuit board, a support member arranged on one end of the package material body away from the circuit board, and a filter having a first and a second surfaces. The package material body includes a top end bearing surface. The support member includes a support body and an extension structure, and the extension structure includes a bottom surface, the bottom surface is connected to the bearing surface, and the second surface is connected to the bottom surface. The camera module is a three-stage structure of a package material body plus a support member plus a plurality of lenses.
    Type: Grant
    Filed: September 15, 2018
    Date of Patent: November 2, 2021
    Assignee: NANCHANG O-FILM OPTICAL-ELECTRONIC TECH CO., LTD.
    Inventors: Chengzhe Shen, Jun Feng, Shumin Zhu, Shengyun Zhang, Wenhua Shuai, Dong Tang
  • Patent number: 11164903
    Abstract: The present disclosure describes the formation of a pad structure in an image sensor device using a sacrificial isolation region and a silicon oxide based stack with no intervening nitride etch-stop layers. The image sensor device includes a semiconductor layer comprising a first horizontal surface opposite to a second horizontal surface; a metallization layer formed on the second horizontal surface of the semiconductor layer, where the metallization layer includes a dielectric layer. The image sensor device also includes a pad region traversing through the semiconductor layer from the first horizontal surface to the second horizontal surface. The pad region includes an oxide layer with no intervening nitride layers formed on the dielectric layer of the metallization layer and a pad structure in physical contact with a conductive structure of the metallization layer.
    Type: Grant
    Filed: May 24, 2019
    Date of Patent: November 2, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Huai-jen Tung, Ching-Chung Su, Keng-Ying Liao, Po-Zen Chen, Su-Yu Yeh, S. Y. Chen
  • Patent number: 11158662
    Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip has an image sensor within a substrate. A first dielectric has an upper surface that extends over a first side of the substrate and over one or more trenches within the first side of the substrate. The one or more trenches laterally surround the image sensor. An internal reflection structure arranged over the upper surface of the first dielectric. The internal reflection structure is configured to reflect radiation exiting from the substrate back into the substrate.
    Type: Grant
    Filed: November 26, 2019
    Date of Patent: October 26, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Keng-Yu Chou, Chun-Hao Chuang, Chien-Hsien Tseng, Kazuaki Hashimoto, Wei-Chieh Chiang, Cheng Yu Huang, Wen-Hau Wu, Chih-Kung Chang, Jhy-Jyi Sze
  • Patent number: 11150405
    Abstract: Apparatuses and methods for photonic communication and photonic addressing are disclosed herein. An example apparatus includes a plurality of photonic sources, a plurality of memory die, a logic die. Each of the plurality of photonic sources provides a photonic signal of a different wavelength and are provided to a first photonic path. Each memory die of the plurality of memory die includes a photonic modulation circuit coupled to the first photonic path, and further includes a photonic detector circuit coupled to a second photonic path. Each memory die of the plurality of memory die is associated with and addressed by a respective wavelength of a photonic signal. The logic die is coupled to the first and second photonic paths, and includes a plurality of photonic circuits. Each of the photonic circuits of the plurality of photonic circuits is associated with a respective wavelength of a photonic signal.
    Type: Grant
    Filed: March 27, 2019
    Date of Patent: October 19, 2021
    Assignee: Micron Technology, Inc.
    Inventor: Sion Quinlan
  • Patent number: 11145773
    Abstract: The light receiving element unit includes a first light receiving element having a light receiving region on the main surface side of the first semiconductor substrate and a second light receiving element having a light receiving region on the main surface side of the second semiconductor substrate, and a support substrate having wiring for electrically connecting the first light receiving element and the second light receiving element to the outside, one of the first light receiving element and the second light receiving element has a recess formed in a concave shape from the back surface opposite to the light receiving region toward the light receiving region, and the other is accommodated in the recess.
    Type: Grant
    Filed: July 31, 2019
    Date of Patent: October 12, 2021
    Assignee: Kyoto Semiconductor Co., Ltd.
    Inventors: Yu Itazaki, Etsuji Omura
  • Patent number: 11145779
    Abstract: A photodiode includes an active area formed by intrinsic germanium. The active area is located within a cavity formed in a silicon layer. The cavity is defined by opposed side walls which are angled relative to a direction perpendicular to a bottom surface of the silicon layer. The angled side walls support epitaxial growth of the intrinsic germanium with minimal lattice defects.
    Type: Grant
    Filed: March 6, 2019
    Date of Patent: October 12, 2021
    Assignee: STMicroelectronics (Crolles 2) SAS
    Inventors: Charles Baudot, Sebastien Cremer, Nathalie Vulliet, Denis Pellissier-Tanon
  • Patent number: 11139328
    Abstract: A semiconductor module for an image-sensing device is disclosed. The semiconductor module may include: a printed circuit board (PCB), a photosensitive member, at least an electric component and a molding component. The PCB may have a first surface, and the photosensitive member and the electric component are positioned on the first surface of the PCB. The molding component may be formed along with the first surface of the PCB, and separate the photosensitive member and the electric component from the ambient environment. The molding component may be in direct contact with the photosensitive member, the electric component and the first surface of the PCB. At least a portion of the molding component may be transparent to allow at last 50% of the incident light to pass through the molding component to reach the photosensitive member.
    Type: Grant
    Filed: April 23, 2018
    Date of Patent: October 5, 2021
    Assignee: Sunny Opotech North America Inc.
    Inventors: Mingzhu Wang, Takehiko Tanaka, Nan Guo, Zhenyu Chen, Bojie Zhao