With Optical Element Patents (Class 257/432)
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Patent number: 11930287Abstract: An imaging element according to an embodiment includes: a light receiving unit including a plurality of photoelectric conversion elements arranged in a lattice-pattern array, and a plurality of lenses provided for respective sets of elements on a one-to-one basis, each set of elements including two or more of the plurality of photoelectric conversion elements arranged adjacent to each other. In the light receiving unit, among a plurality of pixel sets each including the set of elements and one of the plurality of lenses provided in the set of elements, at least two pixel sets adjacent to each other are different from each other in pupil correction amount.Type: GrantFiled: May 1, 2020Date of Patent: March 12, 2024Assignee: Sony Semiconductor Solutions CorporationInventor: Hiroshi Katayama
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Patent number: 11923388Abstract: An image sensing device includes a semiconductor substrate, a plurality of photoelectric conversion elements supported by the semiconductor substrate, each photoelectric conversion elements configured to generate an electrical signal corresponding to incident light by performing a photoelectric conversion of the incident light, a plurality of color filters disposed over the semiconductor substrate to filter incident light to be received by the photoelectric conversion elements, each color filter configured to allow light having a specific color to pass therethrough, and a grid structure disposed between the color filters and structured to include asymmetric sidewalls that are shaped based on colors of adjacent color filters.Type: GrantFiled: March 15, 2021Date of Patent: March 5, 2024Assignee: SK HYNIX INC.Inventor: Sun Ho Oh
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Patent number: 11923396Abstract: An integrated circuit includes a photodetector. The photodetector includes one or more dielectric structures positioned in a trench in a semiconductor substrate. The photodetector includes a photosensitive material positioned in the trench and covering the one or more dielectric structures. A dielectric layer covers the photosensitive material. The photosensitive material has an index of refraction that is greater than the indices of refraction of the dielectric structures and the dielectric layer.Type: GrantFiled: April 18, 2022Date of Patent: March 5, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chun-Wei Hsu, Tsai-Hao Hung, Chung-Yu Lin, Ying-Hsun Chen
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Patent number: 11912918Abstract: The invention provides a method for providing a luminescent particle (100) with a hybrid coating, the method comprising: (i) providing a luminescent core (102) comprising a primer layer (105) on the luminescent core (102); (ii) providing a main ALD coating layer (120) onto the primer layer (105) by application of a main atomic layer deposition process, the main ALD coating layer (120) comprising a multilayer (1120) with two or more layers (1121) having different chemical compositions, and wherein in the main atomic layer deposition process a metal oxide precursor is selected from a group of metal oxide precursors comprising Al, Zn, Hf, Ta, Zr, Ti, Sn, Nb, Y, Ga, and V; (iii) providing a main sol-gel coating layer (130) onto the main ALD-coating layer (120) by application of a main sol-gel coating process, the main sol-gel coating layer (130) having a chemical composition different from one or more of the layers (1121) of the multilayer (1120).Type: GrantFiled: June 29, 2021Date of Patent: February 27, 2024Assignee: LUMILEDS LLCInventors: Jens Meyer, Andreas Tücks, Peter Josef Schmidt, Erik Roeling
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Patent number: 11901380Abstract: A solid-state image sensor is provided. The solid-state image sensor includes a semiconductor substrate having photoelectric conversion elements. The photoelectric conversion elements form an N×N pixel array, where N is a positive integer larger than or equal to 3. The solid-state image sensor also includes a modulation layer disposed above the photoelectric conversion elements. The solid-state image sensor further includes a light-adjusting structure disposed on the modulation layer and corresponding to the N×N pixel array. The N×N pixel array includes a first pixel region having at least one first pixel. The N×N pixel array also includes a second pixel region adjacent to the first pixel region in a first direction and in a second direction different from the first direction and having second pixels. The aperture ratio of the first pixel and the aperture ratio of the second pixel are different.Type: GrantFiled: November 30, 2020Date of Patent: February 13, 2024Assignee: VISERA TECHNOLOGIES COMPANY LIMITEDInventors: Hui-Min Yang, Zong-Ru Tu, Yu-Chi Chang, Han-Lin Wu
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Patent number: 11892665Abstract: A colloidal crystal structure includes a colloidal crystal layer including a plurality of colloidal particles and a binder disposed between the plurality of colloidal particles to fix the colloidal particles, and a refractive index control material that is provided on one surface of the colloidal structural layer, is transparent, and has a refractive index difference of less than 10% with respect to the binder. A light-emitting device includes an optical filter including the colloidal crystal structure, and a light source, and a part of primary light emitted by the light source passes through the optical filter. A lighting system includes the light-emitting device.Type: GrantFiled: January 15, 2020Date of Patent: February 6, 2024Assignee: Panasonic Intellectual Property Management Co., Ltd.Inventors: Ryosuke Shigitani, Shumpei Fujii
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Patent number: 11889211Abstract: An imaging element according to an embodiment includes: a light receiving unit including a plurality of photoelectric conversion elements arranged in a lattice-pattern array, and a plurality of lenses provided for respective sets of elements on a one-to-one basis, each set of elements including two or more of the plurality of photoelectric conversion elements arranged adjacent to each other. In the light receiving unit, among a plurality of pixel sets each including the set of elements and one of the plurality of lenses provided in the set of elements, at least two pixel sets adjacent to each other are different from each other in pupil correction amount.Type: GrantFiled: May 1, 2020Date of Patent: January 30, 2024Assignee: Sony Semiconductor Solutions CorporationInventor: Hiroshi Katayama
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Patent number: 11877078Abstract: The deterioration of light condensing characteristics of an overall solid-state imaging device resulting from providing in-layer lenses is suppressed while preventing the deterioration of device characteristics of the solid-state imaging device and reduction of yield.Type: GrantFiled: January 11, 2023Date of Patent: January 16, 2024Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Kenta Nojima, Kenju Nishikido
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Patent number: 11869911Abstract: The present disclosure relates to an imaging element and an electronic apparatus configured to achieve higher-resolution image taking. The imaging element includes: a photoelectric conversion portion provided in a semiconductor substrate for each pixel that performs photoelectric conversion on light that enters through a filter layer; an element isolation portion configured to separate the photoelectric conversion portions of adjacent pixels; and an inter-pixel light shielding portion disposed between the pixels in a layer and provided between the semiconductor substrate and the filter layer and separated from a light receiving surface of the semiconductor substrate by a predetermined interval. Moreover, an interval between the light receiving surface of the semiconductor substrate and a tip end surface of the inter-pixel light shielding portion is smaller than a width of the tip end surface of the inter-pixel light shielding portion.Type: GrantFiled: February 28, 2022Date of Patent: January 9, 2024Assignee: Sony Semiconductor Solutions CorporationInventor: Hirotoshi Nomura
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Patent number: 11871100Abstract: Disclosed are a camera module, a blocking-type photosensitive assembly, a manufacturing method thereof, and an electronic device. The camera module includes a blocking-type photosensitive assembly and at least one motor camera lens assembly arranged on the blocking-type photosensitive assembly. The blocking-type photosensitive assembly includes a molded photosensitive assembly and a blocking structure arranged on the molded photosensitive assembly. A blocking surface of the blocking structure is higher than an upper surface of a filter element, and at least a part of the projection of the blocking surface of the blocking structure on the molded photosensitive assembly overlaps with the projection of an optical lens of the motor camera lens assembly on the molded photosensitive assembly to block the optical lens from directly contacting the filter element.Type: GrantFiled: March 2, 2020Date of Patent: January 9, 2024Assignee: NINGBO SUNNY OPOTECH CO., LTD.Inventors: Zhen Huang, Zhongyu Luan, Zongchun Yang, Lifeng Kan, Chenxiang Xu
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Patent number: 11862656Abstract: There is provided a semiconductor device including: a plurality of bumps on a first semiconductor substrate; and a lens material in a region other than the plurality of bumps on the first semiconductor substrate, wherein a distance between a side of a bump closest to the lens material and a side of the lens material closest to the bump is greater than twice a diameter of the bump closest to the lens material, and wherein the distance between the side of the bump closest to the lens material and the side of the lens material closest to the bump is greater a minimum pitch of the bumps.Type: GrantFiled: April 5, 2022Date of Patent: January 2, 2024Assignee: SONY GROUP CORPORATIONInventors: Jun Ogi, Junichiro Fujimagari, Susumu Inoue, Atsushi Fujiwara
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Patent number: 11862927Abstract: There are provided high power, high brightness solid-state laser systems that maintain initial beam properties, including power levels, and do not have degradation of performance or beam quality, for at least 10,000 hours of operation. There are provided high power, high brightness solid-state laser systems containing Oxygen in their internal environments and which are free from siloxanes.Type: GrantFiled: February 3, 2020Date of Patent: January 2, 2024Assignee: Nuburu, Inc.Inventors: Jean-Philippe Feve, Matthew Silva Sa, Monica Greenlief, Donald Millick, Denis Brisson, Nathaniel Dick, Mark S Zediker
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Patent number: 11848350Abstract: An image sensor is fabricated by first heavily p-type doping the thin top monocrystalline silicon substrate of an SOI wafer, then forming a relatively lightly p-doped epitaxial layer on a top surface of the top silicon substrate, where p-type doping levels during these two processes are controlled to produce a p-type dopant concentration gradient in the top silicon substrate. Sensing (circuit) elements and associated metal interconnects are fabricated on the epitaxial layer, then the handling substrate and oxide layer of the SOI wafer are at least partially removed to expose a lower surface of either the top silicon substrate or the epitaxial layer, and then a pure boron layer is formed on the exposed lower surface. The p-type dopant concentration gradient monotonically decreases from a maximum level near the top-silicon/epitaxial-layer interface to a minimum concentration level at the epitaxial layer's upper surface.Type: GrantFiled: March 10, 2021Date of Patent: December 19, 2023Assignee: KLA CorporationInventors: Abbas Haddadi, Sisir Yalamanchili, John Fielden, Yung-Ho Alex Chuang
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Patent number: 11848398Abstract: A flat bonding method of light emitting devices including bonding light emitting devices on a circuit board using a reflow process, and re-bonding at least a portion of the light emitting devices bonded on the circuit board using a press plate while pressing the portion of the light emitting devices.Type: GrantFiled: December 24, 2020Date of Patent: December 19, 2023Assignee: SEOUL VIOSYS CO., LTD.Inventor: Ik Kyu You
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Patent number: 11843018Abstract: An imaging device includes a first photoelectric conversion region (170) receiving light within a first range of wavelengths, a second photoelectric conversion region (170) receiving light within a second range of wavelengths, and a third photoelectric conversion region (170) receiving light within a third range of wavelengths. At least a portion of a light-receiving surface of the first photoelectric conversion region has a first concave-convex structure (113), and a light-receiving surface of the second photoelectric conversion region has a different structure (111) than the first concave-convex structure.Type: GrantFiled: July 13, 2018Date of Patent: December 12, 2023Assignee: Sony Semiconductor Solutions CorporationInventor: Sozo Yokogawa
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Patent number: 11837618Abstract: An image sensor includes a semiconductor substrate having a plurality of pixel regions arranged in a first direction and a second direction that are parallel to an upper surface of the semiconductor substrate. The first direction is perpendicular to the second direction. A grid structure extends in the first direction and the second direction on the semiconductor substrate to define openings corresponding to a plurality of sub-pixel regions of the plurality of the pixel regions, respectively. Color filters are disposed in the openings of the grid structure, respectively. A protective layer covers sidewalls of the grid structure and bottom surfaces of the color filters. The protective layer includes silicon oxide including carbon (C) or nitrogen (N).Type: GrantFiled: August 21, 2020Date of Patent: December 5, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jaesung Hur, Taeksoo Jeon, Jongmin Baek, Sanghoon Ahn, Jangho Lee, Kyu-Hee Han
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Patent number: 11825666Abstract: An imaging element according to an embodiment of the present disclosure includes: a first electrode including a plurality of electrodes; a second electrode opposed to the first electrode; a photoelectric conversion layer including an organic material provided between the first electrode and the second electrode; a first semiconductor layer provided between the first electrode and the photoelectric conversion layer, and including an n-type semiconductor material; and a second semiconductor layer provided between the second electrode and the photoelectric conversion layer, and including at least one of a carbon-containing compound having an electron affinity larger than a work function of the first electrode or an inorganic compound having a work function larger than the work function of the first electrode.Type: GrantFiled: July 30, 2019Date of Patent: November 21, 2023Assignees: Sony Corporation, Sony Semiconductor Solutions CorporationInventors: Yosuke Saito, Masashi Bando, Yukio Kaneda, Yoshiyuki Hirano, Toshiki Moriwaki
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Patent number: 11810893Abstract: An interposer sandwich structure includes a top interposer and a bottom interposer enclosing an integrated circuit electronic device that includes an attachment for attaching the device to the bottom interposer, and an interconnection structure connecting the top interposer to the bottom interposer. The top interposer may also be directly connected to a chip carrier in addition to the bottom interposer. The structure provides shielding and protection of the device against Electrostatic Discharge (ESD), Electromagnetic Interference (EMI), and Electromagnetic Conductivity (EMC) in miniaturized 3D packaging.Type: GrantFiled: May 31, 2021Date of Patent: November 7, 2023Assignee: International Business Machines CorporationInventors: William Emmett Bernier, Bing Dang, John Knickerbocker, Son Kim Tran, Mario J. Interrante
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Patent number: 11792542Abstract: An imaging device includes: an effective pixel region that includes a plurality of imaging elements-A, amplifies signal charges generated by photoelectric conversion, and reads the signal charges into a drive circuit; and an optical black region that includes a plurality of imaging elements-B, surrounds the effective pixel region, and outputs optical black that serves as the reference for black level. In the imaging device, the photoelectric conversion layer forming the plurality of imaging elements-A and the plurality of imaging elements-B is a common photoelectric conversion layer, the common photoelectric conversion layer is located on an outer side of the optical black region, and extends toward an outer edge region surrounding the optical black region, and an outer edge electrode is disposed in the outer edge region.Type: GrantFiled: August 31, 2022Date of Patent: October 17, 2023Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Tetsuro Takada, Taiichiro Watanabe
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Patent number: 11778841Abstract: To provide a photoelectric conversion element that can improve image quality. Provided is a photoelectric conversion element (100) including at least a first electrode (101), a work function control layer (108), a photoelectric conversion layer (102), an oxide semiconductor layer (104), and a second electrode (107) in this order, and further including a third electrode (105), in which the third electrode (105) is provided apart from the second electrode (107) and is provided facing the photoelectric conversion layer (102) via an insulating layer (106), and the work function control layer (108) contains a larger amount of oxygen than an amount of oxygen satisfying a stoichiometric composition.Type: GrantFiled: July 30, 2019Date of Patent: October 3, 2023Assignees: SONY CORPORATION, SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Shintarou Hirata, Masahiro Joei, Kenichi Murata, Masashi Bando, Yosuke Saito, Ryosuke Suzuki
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Patent number: 11776978Abstract: The present disclosure relates to a solid-state image pickup device and an electronic apparatus that are capable of preventing leakage of charges between adjacent pixels. A plurality of pixels perform photoelectric conversion on light incident from a back surface via different on-chip lenses for each pixel. A pixel separation wall is formed between pixels adjacent to each other, and includes a front-side trench formed from a front surface and a backside trench formed from the back surface. A wiring layer is provided on the front surface. The present disclosure is applicable to, for example, a backside illuminated CMOS image sensor.Type: GrantFiled: July 13, 2022Date of Patent: October 3, 2023Assignee: Sony Group CorporationInventors: Atsushi Masagaki, Yusuke Tanaka
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Patent number: 11776985Abstract: A method of fabricating self-aligned grids in a BSI image sensor is provided. The method includes depositing a first dielectric layer over a back surface of a substrate that has a plurality of photodiodes formed therein, forming a grid of trenches, and filling in the trenches with dielectric material to create a trench isolation grid. Here, a trench passes through the first dielectric layer and extends into the substrate. The method further includes etching back dielectric material in the trenches to a level that is below an upper surface of the first dielectric layer to form recesses overlaying the trench isolation grid, and filling in the recesses with metallic material to create a metallic grid that is aligned with the trench isolation grid.Type: GrantFiled: May 6, 2021Date of Patent: October 3, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tsun-Kai Tsao, Jiech-Fun Lu, Shih-Pei Chou, Wei Chuang Wu
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Patent number: 11764239Abstract: A method for forming an image sensor package is provided. An image sensor chip is formed over a package substrate. A protection layer is formed overlying the image sensor chip. The protection layer has a planar top surface and a bottom surface lining and contacting structures under the protection layer. An opening is formed into the protection layer and spaced around a periphery of the image sensor chip. A light shielding material is filled in the opening to form an on-wafer shield structure having a sidewall directly contact the protection layer.Type: GrantFiled: February 10, 2022Date of Patent: September 19, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wen-Hau Wu, Chun-Hao Chuang, Kazuaki Hashimoto, Keng-Yu Chou, Wei-Chieh Chiang, Cheng Yu Huang
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Patent number: 11765485Abstract: A photoelectric conversion apparatus includes a driving unit and a plurality of pixels. The pixel includes a first photoelectric conversion unit, a second photoelectric conversion unit, a charge-voltage conversion unit, a first transfer transistor, a second transfer transistor, a reset transistor, a microlens configured to condense incident light to the first photoelectric conversion unit and the second photoelectric conversion unit, and an output unit. The driving unit performs a first operation including a first reset operation and a first readout operation, and a second operation including a second reset operation and a second readout operation.Type: GrantFiled: July 29, 2022Date of Patent: September 19, 2023Assignee: Canon Kabushiki KaishaInventor: Kazuki Ohshitanai
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Patent number: 11764878Abstract: Multi-chip modules in different semiconductor packages may be optically data coupled by way of LEDs and photodetectors linked by a multicore fiber. The multicore fiber may pass through apertures in the semiconductor packages, with an array of LEDs and photodetectors in the semiconductor package providing and receiving, respectively, optical signals comprised of data passed between the multi-chip modules.Type: GrantFiled: March 7, 2022Date of Patent: September 19, 2023Assignee: AVICENATECH CORP.Inventors: Bardia Pezeshki, Robert Kalman, Alexander Tselikov, Cameron Danesh
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Patent number: 11754783Abstract: Described herein are photonic communication platforms that can overcome the memory bottleneck problem, thereby enabling scaling of memory capacity and bandwidth well beyond what is possible with conventional computing systems. Some embodiments provide photonic communication platforms that involve use of photonic modules. Each photonic module includes programmable photonic circuits for placing the module in optical communication with other modules based on the needs of a particular application. The architecture developed by the inventors relies on the use of common photomask sets (or at least one common photomask) to fabricate multiple photonic modules in a single wafer. Photonic modules in multiple wafers can be linked together into a communication platform using optical or electronic means.Type: GrantFiled: May 6, 2021Date of Patent: September 12, 2023Assignee: Lightmatter, Inc.Inventors: Nicholas C. Harris, Carl Ramey, Michael Gould, Thomas Graham, Darius Bunandar, Ryan Braid, Mykhailo Tymchenko
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Patent number: 11749703Abstract: To solve at least one of various problems in an image sensor in a 2PD scheme. A solid-state image pickup element includes a plurality of pixels each including a photoelectric conversion element formed on a silicon substrate, in which some pixels in the plurality of pixels each have the photoelectric conversion element partitioned by a first-type separating region extending in a plate shape in a direction along a thickness direction of the silicon substrate, and other pixels in the plurality of pixels each have the photoelectric conversion element partitioned by a second-type separating region formed with a material different from a material of the first-type separating region, the second-type separating region extending in a plate shape in the direction along the thickness direction of the silicon substrate.Type: GrantFiled: June 15, 2021Date of Patent: September 5, 2023Assignee: SONY GROUP CORPORATIONInventor: Shinichiro Noudo
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Patent number: 11743611Abstract: Provided is an image sensor including a first pixel including a first floating diffusion region and a second floating diffusion region, a second pixel including a first floating diffusion region, a second floating diffusion region, and a third floating diffusion region, a third pixel including a first floating diffusion region and a second floating diffusion region, and a fourth pixel including a first floating diffusion region, a second floating diffusion region, and a third floating diffusion region, wherein the second floating diffusion region of the first pixel and the second floating diffusion region of the second pixel are connected through a first metal line, and wherein the third floating diffusion region of the second pixel and the third floating diffusion region of the third pixel are connected through a second metal.Type: GrantFiled: July 8, 2022Date of Patent: August 29, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jungbin Yun, Hwanwoong Kim, Eunsub Shim, Kyungho Lee, Hongsuk Lee
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Patent number: 11736829Abstract: The pixel region includes a first phase difference pixel group including a plurality of the phase difference pixels of which the first side of the photoelectric conversion element is blocked by the light blocking layer in a first side region of the first side, and a second phase difference pixel group including a plurality of the phase difference pixels of which the second side of the photoelectric conversion element is blocked by the light blocking layer. The first phase difference pixel group includes a first A pixel and a first B pixel in which a light blocking area of the photoelectric conversion element using the light blocking layer is smaller than that of the first A pixel. The controller performs addition readout processing in which at least one of a pixel signal of the first A pixel or a pixel signal of the first B pixel is weighted in accordance with optical characteristics of the imaging lens.Type: GrantFiled: August 22, 2022Date of Patent: August 22, 2023Assignee: FUJIFILM CorporationInventors: Koichi Tanaka, Tomoyuki Kawai, Junya Kitagawa, Yuya Nishio
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Patent number: 11726184Abstract: The present disclosure relates to various embodiments of an optical component for a LIDAR Sensor System. The optical component may include an optical element having a first main surface and a second main surface opposite to the first main surface, a first lens array formed on the first main surface, and/or a second lens array formed on the second main surface. The optical element has a curved shape in a first direction of the LIDAR Sensor System.Type: GrantFiled: March 5, 2020Date of Patent: August 15, 2023Assignee: LeddarTech Inc.Inventors: Ricardo Ferreira, Stefan Hadrath, Peter Hoehmann, Herbert Kaestle, Florian Kolb, Norbert Magg, Jiye Park, Tobias Schmidt, Martin Schnarrenberger, Norbert Haas, Helmut Horn, Bernhard Siessegger, Guido Angenendt, Charles Braquet, Gerhard Maierbacher, Oliver Neitzke, Sergey Khrushchev
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Patent number: 11727790Abstract: A system providing various improved calibration techniques for haptic feedback is described. An acoustic field is defined by one or more control points in a space within which the acoustic field may exist. Each control point is assigned an amplitude value equating to a desired amplitude of the acoustic field at the control point. Because complete control of space is not possible, controlling the acoustic field at given points yields erroneous local maxima in the acoustic field levels at other related positions. In relation to mid-air haptic feedback, these can interfere in interactions with the space by creating secondary effects and ghost phenomena that can be felt outside the interaction area. The level and nature of the secondary maxima in the acoustic field is determined by how the space is controlled. By arranging the transducer elements in different ways, unwanted effects on the acoustic field can be limited and controlled.Type: GrantFiled: October 27, 2020Date of Patent: August 15, 2023Assignee: ULTRAHAPTICS IP LTDInventors: Thomas Andrew Carter, Benjamin John Oliver Long, Robert Charles Blenkinsopp
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Patent number: 11716555Abstract: A solid-state image sensor includes a semiconductor substrate having a photoelectric conversion element converting incident light into a charge and a charge retaining section temporarily retaining the charge photoelectrically converted by the photoelectric conversion element and a light shielding section having an embedded section extending in at least a region between the photoelectric conversion element and the charge retaining section of the semiconductor substrate.Type: GrantFiled: January 29, 2021Date of Patent: August 1, 2023Assignee: SONY CORPORATIONInventors: Tomohiro Ohkubo, Suzunori Endo
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Patent number: 11710760Abstract: One embodiment of the present invention is a display device including a first insulating layer, a second insulating layer, a first transistor, a second transistor, a first light-emitting diode, a second light-emitting diode, and a color conversion layer. The first insulating layer is over the first transistor and the second transistor. The first light-emitting diode and the second light-emitting diode are over the first insulating layer. The color conversion layer is over the second light-emitting diode. The color conversion layer is configured to convert light emitted from the second light-emitting diode into a light having a longer wavelength. The first transistor and the second transistor each include a metal oxide layer and a gate electrode. The metal oxide layer includes a channel formation region. A top surface of the gate electrode is level or substantially level with a top surface of the second insulating layer.Type: GrantFiled: June 9, 2020Date of Patent: July 25, 2023Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Koji Kusunoki, Shingo Eguchi, Takayuki Ikeda
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Patent number: 11703382Abstract: Provided are a display assembly, a method for manufacturing a display assembly and an electronic device. The display assembly includes: a pixel array including a plurality of pixel units; a photosensitive array including a plurality of photosensitive units, at least one of the photosensitive unit is disposed in a gap between two adjacent pixel units of the pixel array for detecting ambient light through the pixel array.Type: GrantFiled: February 8, 2021Date of Patent: July 18, 2023Assignee: Beijing Xiaomi Mobile Software Co., Ltd.Inventor: Chaoxi Chen
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Patent number: 11705474Abstract: The problem of reducing noise in image sensing devices, especially NIR detectors, is solved by providing ground connections for the reflectors. The reflectors may be grounded through vias that couple the reflectors to grounded areas of the substrate. The grounded areas of the substrate may be P+ doped areas formed proximate the surface of the substrate. In particular, the P+ doped areas may be parts of photodiodes. Alternatively, the reflectors may be grounded through a metal interconnect structure formed over the front side of the substrate.Type: GrantFiled: June 17, 2021Date of Patent: July 18, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yen-Ting Chiang, Ching-Chun Wang, Dun-Nian Yaung, Jen-Cheng Liu, Jhy-Jyi Sze, Shyh-Fann Ting, Yimin Huang
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Patent number: 11693149Abstract: A method for forming a molded proximity sensor with an optical resin lens and the structure formed thereby. A light sensor chip is placed on a substrate, such as a printed circuit board, and a diode, such as a laser diode, is positioned on top of the light sensor chip and electrically connected to a bonding pad on the light sensor chip. Transparent, optical resin in liquid form is applied as a drop over the light sensor array on the light sensor chip as well as over the light-emitting diode. After the optical resin is cured, a molding compound is applied to an entire assembly, after which the assembly is polished to expose the lenses and have a top surface flush with the top surface of the molding compound.Type: GrantFiled: August 25, 2021Date of Patent: July 4, 2023Assignees: STMICROELECTRONICS (RESEARCH & DEVELOPMENT) LIMITED, STMICROELECTRONICS PTE LTDInventors: Wing Shenq Wong, Andy Price, Eric Christison
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Patent number: 11696041Abstract: An image sensor includes a two-dimensional pixel array and a lens array. The two-dimensional pixel array comprises a plurality of pixels. Some of the pixels includes two sub-pixels. A rectangular coordinate is established by taking the pixel as an origin, a length direction of the two-dimensional pixel array as an x-axis, and a width direction of the two-dimensional pixel array as a y-axis. The two sub-pixels lie in both a positive half axis and a negative half axis of the x-axis and lies in both a positive half axis and a negative half axis of the y-axis. The lens array comprises a plurality of lenses, each covering one of the pixels.Type: GrantFiled: May 18, 2022Date of Patent: July 4, 2023Assignee: GUANGDONG OPPO MOBILE TELECOMMUNICATIONS CORP., LTD.Inventors: Rui Xu, Cheng Tang, Xin Yang, Xiaotao Li, Wentao Wang, Jianbo Sun, He Lan, Haiyu Zhang, Gong Zhang
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Patent number: 11695093Abstract: A device emitting mid-infrared light that comprises a semiconductor substrate of GaSb or closely related material. The device can also comprise epitaxial heterostructures of InAs, GaAs, AlSb, and related alloys forming light emitting structures cascaded by tunnel junctions. Further, the device can comprise light emission from the front, epitaxial side of the substrate.Type: GrantFiled: November 11, 2019Date of Patent: July 4, 2023Assignee: Analog Devices, Inc.Inventors: Shrenik Deliwala, Ryan Michael Iutzi
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Patent number: 11693164Abstract: An optical filter may include an interference filter that passes at least two channels associated with at least two transmission peaks; and a plurality of blockers, wherein each blocker, of the plurality of blockers, passes a respective channel associated with a respective transmission peak of the at least two transmission peaks and blocks one or more channels other than the respective channel associated with the respective transmission peak.Type: GrantFiled: October 7, 2020Date of Patent: July 4, 2023Assignee: VIAVI Solutions Inc.Inventor: William D. Houck
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Patent number: 11682688Abstract: A photoelectric converting device including: a semiconductor layer with a front surface and a back surface, the semiconductor layer including a photoelectric conversion portion; a wire structure including an insulating film, the wire structure being disposed on the front surface of the semiconductor layer; a first insulator portion disposed in a trench provided in the semiconductor layer; and a second insulator portion disposed between the first insulator portion and the insulating film, wherein the first insulator portion has a maximum width larger than a maximum width of the second insulator portion.Type: GrantFiled: October 22, 2019Date of Patent: June 20, 2023Assignee: Canon Kabushiki KaishaInventors: Keita Torii, Hideki Ina
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Patent number: 11676989Abstract: Provided is a display device including a display layer which includes an active area and a peripheral area adjacent to the active area, a biometric information sensing layer disposed below the display layer and including a sensor, and an optical pattern layer disposed on an optical pattern plane between the biometric information sensing layer and the display layer and including a light blocking part and a transmission part having higher light transmittance than the light blocking part, wherein an upper surface of the light blocking part is concave, and recessed away from the optical pattern plane.Type: GrantFiled: July 2, 2021Date of Patent: June 13, 2023Assignee: Samsung Display Co., Ltd.Inventors: Byung Han Yoo, Hongsick Park, Kijune Lee, Seokhyun Lim, Hyunmin Cho, Dae-Young Lee
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Patent number: 11670604Abstract: A semiconductor arrangement is provided. The semiconductor arrangement includes a first portion and a vertically conductive structure. The first portion includes a first dielectric layer and a first guard ring in the first dielectric layer. The first guard ring includes, in the first dielectric layer, a first metal layer coupled to a first via. The first portion includes a vertical conductive structure passing through the first dielectric layer and proximate by the first guard ring.Type: GrantFiled: August 16, 2021Date of Patent: June 6, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventor: Chien-Hsuan Liu
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Patent number: 11668865Abstract: The subject of the present disclosure is to enhance spectral characteristics. The present disclosure relates to an optical sensor and an electronic apparatus. The optical sensor includes: multiple optical receivers, multiple color filters covering light receiving surfaces of the multiple optical receivers, and a multi-layer filter layered on the multiple color filters. The multiple color filters include a red color filter, a green color filter and a blue color filter. The multi-layer filter includes a first transmission wavelength region allowing transmission of a portion of the transmission wavelength regions of the green color filter and the blue color filter, and a second transmission wavelength region allowing transmission of a portion of the transmission wavelength region of the red color filter.Type: GrantFiled: March 31, 2021Date of Patent: June 6, 2023Assignee: Rohm Co., Ltd.Inventor: Yoshitsugu Uedaira
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Patent number: 11664399Abstract: The solid-state image sensor includes a semiconductor substrate having first and second photoelectric conversion elements, a color filter layer, and a hybrid layer. The isolation structure is disposed between the first and second photoelectric conversion elements. The color filter layer is disposed above the semiconductor substrate. The hybrid layer is disposed between the semiconductor substrate and the color filter layer. The hybrid layer includes a first partition structure, a second partition structure, and a transparent layer. The first partition structure is disposed to correspond to the isolation structure. The second partition structure is surrounded by the first partition structure. The transparent layer is between the first partition structure and the second partition structure. The refractive index of the first partition structure and the refractive index of the second partition structure are lower than the refractive index of the transparent layer.Type: GrantFiled: February 1, 2021Date of Patent: May 30, 2023Assignee: VISERA TECHNOLOGIES COMPANY LIMITEDInventors: Cheng-Hsuan Lin, Yu-Chi Chang, Zong-Ru Tu
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Patent number: 11653546Abstract: A display device includes a display area and a peripheral area. A display layer includes a plurality of display elements arranged thereon. A thin-film encapsulation layer is arranged on the display layer and includes first, second, and third encapsulation layers. The second encapsulation layer is on the first encapsulation layer. The third encapsulation layer is on the second encapsulation layer. A touch sensing layer is arranged on the thin-film encapsulation layer and includes touch electrodes and trace lines. The display area is partially bent about an axis, and the third encapsulation layer is bent along the axis and has a structure in which a first layer and a second layer are alternately stacked. The first layer includes an inorganic insulating material, and the second layer includes a silicon carbon compound material.Type: GrantFiled: December 28, 2020Date of Patent: May 16, 2023Assignee: Samsung Display Co., Ltd.Inventors: Sunhee Lee, Sunho Kim, Gunhee Kim, Donghwan Shim, Taehoon Yang, Choelmin Jang
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Patent number: 11640021Abstract: An optical filter (1a) includes a light-absorbing layer (10). The light-absorbing layer absorbs light in at least a portion of the near-infrared region. When light with a wavelength of 300 nm to 1200 nm is incident on the optical filter (1a) at incident angles of 0°, 30°, and 40°, the optical filter (1a) satisfies given transmittance requirements. IE?1/?2?1 to ?2, IAE?1/?2?1 to ?2, and ISE?1/?2?1 to ?2 defined by the following equations (1) to (3) for two incident angles ?1° and ?2° (?1<?2) selected from 0°, 30°, and 40° satisfy given requirements in a given domain of a wavelength ?.Type: GrantFiled: September 19, 2018Date of Patent: May 2, 2023Assignee: NIPPON SHEET GLASS COMPANY, LIMITEDInventors: Tomitaka Takagi, Katsuhide Shimmo
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Patent number: 11629826Abstract: An LED lamp A includes a plurality of LED modules 2 each including an LED chip 21, and a support member 1 including a support surface 1a on which the LED modules 2 are mounted. The LED modules 2 include a plurality of kinds of LED modules, or a first through a third LED modules 2A, 2B and 2C different from each other in directivity characteristics that represent light intensity distribution with respect to light emission directions. This arrangement ensures that the entire surrounding area can be illuminated with sufficient brightness.Type: GrantFiled: August 31, 2020Date of Patent: April 18, 2023Assignee: ROHM CO., LTD.Inventor: Yusaku Kawabata
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Patent number: 11624893Abstract: A photosensitive element driving mechanism is provided and includes a fixed assembly, a first movable assembly, a photosensitive element and a first driving assembly. The fixed assembly has a base plate. The first movable assembly includes a circuit member movable relative to the fixed assembly, and the circuit member includes a circuit member body and a movable cantilever. The photosensitive element is configured to receive light traveling along an optical axis. The photosensitive element is disposed on the circuit member body and is electrically connected to the circuit member. The first driving assembly is configured to drive the first movable assembly to move relative to the fixed assembly. There is a gap between the first movable assembly and the fixed assembly, and only the photosensitive element is disposed on the circuit member body.Type: GrantFiled: July 25, 2019Date of Patent: April 11, 2023Assignee: TDK TAIWAN CORP.Inventors: Chen-Chi Kuo, Sin-Jhong Song
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Patent number: 11627266Abstract: A depth pixel of a time-of-flight (ToF) sensor includes a common photogate disposed in a center region of the depth pixel, a plurality of floating diffusion regions disposed in a peripheral region surrounding the center region, a plurality of demodulation transfer gates disposed in the peripheral region, and a plurality of overflow gates disposed in the peripheral region. The demodulation transfer gates transfer a photo charge collected by the common photogate to the plurality of floating diffusion regions. The demodulation transfer gates are symmetric with respect to each of a horizontal line and a vertical line that pass through a center of the depth pixel and are substantially perpendicular to each other. The overflow gates drain the photo charge collected by the common photogate, and are symmetric with respect to each of the horizontal line and the vertical line.Type: GrantFiled: February 11, 2021Date of Patent: April 11, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Younggu Jin, Youngchan Kim, Youngsun Oh
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Patent number: 11619772Abstract: The present technology relates to a semiconductor chip and an electronic apparatus that can suppress degradation of optical characteristics of a semiconductor chip including an image pickup device. A semiconductor chip includes: an image pickup device; a transparent protective member that protects the image pickup device; an IR cut film arranged between a light-receiving surface of the image pickup device and the protective member; a bonding layer that bonds the IR cut film and the protective member together; and a protective film that covers side surfaces of the IR cut film and the bonding layer. The present technology can be applied to, for example, a semiconductor chip for an image pickup device.Type: GrantFiled: June 10, 2021Date of Patent: April 4, 2023Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Naoto Sasaki, Yutaka Ooka