With Optical Element Patents (Class 257/432)
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Patent number: 12038604Abstract: Described herein are photonic communication platforms that can overcome the memory bottleneck problem, thereby enabling scaling of memory capacity and bandwidth well beyond what is possible with conventional computing systems. Some embodiments provide photonic communication platforms that involve use of photonic modules. Each photonic module includes programmable photonic circuits for placing the module in optical communication with other modules based on the needs of a particular application. The architecture developed by the inventors relies on the use of common photomask sets (or at least one common photomask) to fabricate multiple photonic modules in a single wafer. Photonic modules in multiple wafers can be linked together into a communication platform using optical or electronic means.Type: GrantFiled: December 1, 2023Date of Patent: July 16, 2024Assignee: Lightmatter, Inc.Inventors: Nicholas C. Harris, Carl Ramey, Michael Gould, Thomas Graham, Darius Bunandar, Ryan Braid, Mykhailo Tymchenko
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Patent number: 12041330Abstract: An optical module for endoscope includes a light emitting element, an optical fiber, a ferrule to which the light emitting element is bonded, a wiring board to which the ferrule is bonded, and a resin disposed between the ferrule and the wiring board, wherein the ferrule has a first principal surface made of a transparent material, a second principal surface, and a side surface, the second principal surface has an opening of an insertion hole, the second principal surface has an opening of a groove communicating with the insertion hole, the side surface has an opening of the groove, and a first distance between the opening of the groove on the side surface and the first principal surface is greater than a second distance between the bottom surface of the insertion hole and the first principal surface.Type: GrantFiled: November 23, 2022Date of Patent: July 16, 2024Assignee: OLYMPUS CORPORATIONInventors: Yusuke Nakagawa, Yohei Sakai
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Patent number: 12035580Abstract: A semiconductor apparatus including a layered structure is disclosed. In one example, a first substrate with a light-emitting element and a second substrate with a light-blocking member on a periphery are layered with each other. The layered structure includes a first resin including a photocurable resin that seals a part between the first substrate and the second substrate in a pixel region. A second resin seals a part between the first substrate and the second substrate in a light-blocking region at a periphery. A protrusion structure is arranged between the first substrate and the second substrate in a boundary region between the pixel region and the light-blocking region, and includes a transparent or semitransparent material that transmits light.Type: GrantFiled: August 28, 2019Date of Patent: July 9, 2024Assignee: Sony Semiconductor Solutions CorporationInventors: Hiroaki Tsuchioka, Yosuke Motoyama
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Patent number: 12034025Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To mitigate crosstalk, isolation structures may be formed around each SPAD. The isolation structures may include front side deep trench isolation structures that extend partially or fully through a semiconductor substrate for the SPADs. The isolation structures may include a metal filler such as tungsten that absorbs photons. The isolation structures may include a p-type doped semiconductor liner to mitigate dark current. The isolation structures may include a buffer layer such as silicon dioxide that is interposed between the metal filler and the p-type doped semiconductor liner. The isolation structures may have a tapered portion or may be formed in two steps such that the isolation structures have different portions with different properties. An additional filler such as polysilicon or borophosphosilicate glass may be included in some of the isolation structures in addition to the metal filler.Type: GrantFiled: May 13, 2021Date of Patent: July 9, 2024Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Jeffrey Peter Gambino, David T. Price, Marc Allen Sulfridge, Richard Mauritzson, Michael Gerard Keyes, Ryan Rettmann, Kevin Mcstay
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Patent number: 12025555Abstract: A photodetector comprises a substrate, and supported by the substrate, a configuration to act as optical resonator and to absorb incident radiation of a band, including infrared. The configuration comprises: a resonant frontside structure facing the incident radiation; a backside structure and arranged between the frontside structure and the substrate; and a layer of an active material made from a semiconducting material, and configured to convert at least part of the incident radiation of the band into charge carriers. The frontside structure or the backside structure is made from electrically conducting material and is in contact with the active material. The configuration is configured to selectively absorb the incident radiation of the band. The frontside structure or the backside structure that is in contact with the active material is contacted by electrical contacts for sensing the charge carriers in the active material. The active material comprises amorphous or polycrystalline material.Type: GrantFiled: June 19, 2020Date of Patent: July 2, 2024Assignee: SENSIRION AGInventors: Alexander Dorodnyy, Alexander Lochbaum, Jürg Leuthold, Lukas Bürgi, Silvio Graf
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Patent number: 12021347Abstract: A photonic chip includes an optical layer bonded, via a bonding interface, to a carrier, and a laser source having a waveguide encapsulated in an encapsulating sublayer of the optical layer, the waveguide having a first electrical contact embedded in the encapsulating sublayer. The photonic chip also includes an interconnect metal network forming a via that extends, in the optical layer, from the bonding interface to the first embedded electrical contact of the waveguide, the interconnect metal network having metal vias that electrically connect to one another metals lines that extend mainly parallel to the plane of the chip, the metal lines being arranged one above the other within the optical layer.Type: GrantFiled: May 14, 2019Date of Patent: June 25, 2024Assignee: COMMISSARIAT A L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVESInventors: Sylvie Menezo, Séverine Cheramy
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Patent number: 12021106Abstract: Provided is a solid-state image sensor and an electronic device capable of suppressing the occurrence of a strong electrical field near a transistor while being compact. The solid-state image sensor includes a photoelectric conversion element that performs photoelectric conversion, an element isolation that penetrates from a first main surface to a second main surface of a substrate and that is formed between pixels including the photoelectric conversion element, and a conductive part provided in close contact with a first main surface side of the element isolation.Type: GrantFiled: November 27, 2020Date of Patent: June 25, 2024Assignee: Sony Semiconductor Solutions CorporationInventors: Tomomi Ito, Atsushi Masagaki, Yoshiharu Kudoh
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Patent number: 12015045Abstract: A manufacturing method of an image pickup apparatus for endoscope includes: manufacturing two optical wafers each of which has a glass wafer as a base substrate and is a hybrid lens wafer including a plurality of resin lenses, and a spacer wafer including a plurality of spacers and being formed with an inorganic material; manufacturing a bonded wafer in which space in which the plurality of resin lenses are disposed is hermetically sealed by directly bonding the two optical wafers and the spacer wafer at a temperature lower than a softening point of the plurality of resin lenses; disposing a plurality of image pickup members on the bonded wafer; and cutting the bonded wafer on which the plurality of image pickup members are disposed.Type: GrantFiled: July 14, 2021Date of Patent: June 18, 2024Assignee: OLYMPUS CORPORATIONInventor: Noriyuki Fujimori
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Patent number: 12015046Abstract: Back-illuminated DUV/VUV/EUV radiation or charged particle image sensors are fabricated using a method that utilizes a plasma atomic layer deposition (plasma ALD) process to generate a thin pinhole-free pure boron layer over active sensor areas. Circuit elements are formed on a semiconductor membrane's frontside surface, and then an optional preliminary hydrogen plasma cleaning process is performed on the membrane's backside surface. The plasma ALD process includes performing multiple plasma ALD cycles, with each cycle including forming an adsorbed boron precursor layer during a first cycle phase, and then generating a hydrogen plasma to convert the precursor layer into an associated boron nanolayer during a second cycle phase. Gasses are purged from the plasma ALD process chamber after each cycle phase. The plasma ALD cycles are repeated until the resulting stack of boron nanolayers has a cumulative stack height (thickness) that is equal to a selected target thickness.Type: GrantFiled: December 7, 2021Date of Patent: June 18, 2024Assignee: KLA CorporationInventors: Sisir Yalamanchili, John Fielden, Francisco Kole, Yung-Ho Alex Chuang
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Patent number: 12009380Abstract: A pixel with enhanced quantum efficiency comprises a semiconductor body that has a first surface configured as an entrance surface and a light capturing region configured for capturing light that is incident on the first surface. The pixel further comprises a structured interface, isolation layers on at least two surfaces of the semiconductor body that are perpendicular to the first surface, and a filter element that is arranged at a distance from the first surface such that light that is incident on the first surface at an angle of incidence smaller than a critical angle impinges on the filter element.Type: GrantFiled: November 13, 2019Date of Patent: June 11, 2024Assignee: AMS SENSORS BELGIUM BVBAInventors: Guy Meynants, Gerhard Eilmsteiner
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Patent number: 11996420Abstract: An image sensor is provided. An image sensor includes: a substrate including an active pixel sensor region, an optical black sensor region, and a boundary region provided between the active pixel sensor region and the optical black sensor region; a photoelectric conversion element provided inside the substrate on the boundary region; a passivation layer provided on the substrate; a grid trench formed on the boundary region of the substrate and extending from an upper surface of the passivation layer toward an inside of the passivation layer; grid patterns, each of the grid patterns being provided on the passivation layer on each of the active pixel sensor region and the boundary region of the substrate, at least a part of a grid pattern being provided inside the grid trench; and a color filter provided between the grid patterns.Type: GrantFiled: August 18, 2021Date of Patent: May 28, 2024Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Han Seok Kim, Byung Jun Park, Hyeon Ho Kim, Young Woo Chung
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Patent number: 11988867Abstract: The present disclosure provides a package structure having a photonic integrated circuit, the package structure includes a substrate, a chip and an optical module. The chip has an optical waveguide structure and a recessed portion. The optical waveguide structure is adjacent to the recessed portion. The recessed portion faces the substrate, and the chip is engaged to the substrate by flip chip. The optical module is provided in the recessed portion of the chip.Type: GrantFiled: August 6, 2021Date of Patent: May 21, 2024Assignee: Molex, LLCInventors: Chih-Wei Peng, Chih-Chung Hsu, Chih-Chung Wu, Zuon-Min Chuang
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Patent number: 11988855Abstract: An optical fingerprint sensor is provided. The optical fingerprint sensor includes a substrate, a light-shielding layer and an optical material layer. The light-shielding layer is disposed on the substrate. The optical material layer is in contact with the light-shielding layer. The optical material layer includes a non-filtering portion and a filtering portion.Type: GrantFiled: June 25, 2019Date of Patent: May 21, 2024Assignee: VISERA TECHNOLOGIES COMPANY LIMITEDInventors: Ho-Tai Lin, Shin-Hong Chen
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Patent number: 11985433Abstract: An HMD includes a single photon avalanche diode (SPAD) array comprising a plurality of SPAD pixels. The HMD also includes a display positioned to display images for viewing by an eye of a user. The HMD also includes one or more processors and one or more hardware storage devices storing instructions that are executable by the one or more processors to configure the HMD to perform various acts associated with using the SPAD array to capture an image frame of an environment for display to the user.Type: GrantFiled: November 30, 2020Date of Patent: May 14, 2024Assignee: Microsoft Technology Licensing, LLCInventors: Raymond Kirk Price, Michael Bleyer, Christopher Douglas Edmonds
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Patent number: 11966104Abstract: An optical modulator includes a substrate having a main surface including a first area and a second area, an optical modulation portion disposed on the first area, and an optical waveguide portion disposed on the second area. The optical modulation portion includes a first mesa waveguide and an electrode connected to the first mesa waveguide. The first mesa waveguide includes a p-type semiconductor layer, a first core layer, and an n-type semiconductor layer. The optical waveguide portion includes a second mesa waveguide. The second mesa waveguide includes a first cladding layer, a second core layer, and a second cladding layer. The second core layer is optically coupled to the first core layer. The first cladding layer contains a p-type dopant and protons. The second cladding layer contains an n-type dopant.Type: GrantFiled: May 19, 2022Date of Patent: April 23, 2024Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Makoto Ogasawara, Naoya Kono, Mitsuru Ekawa
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Patent number: 11961863Abstract: An imaging element including: a photoelectric conversion layer including a compound semiconductor material; a contact layer disposed to be stacked on the photoelectric conversion layer and including a diffusion region of first electrically-conductive type impurities in a selective region; a first insulating layer provided to be opposed to the photoelectric conversion layer with the contact layer interposed therebetween and having a first opening at a position facing the diffusion region; and a second insulating layer provided to be opposed to the contact layer with the first insulating layer interposed therebetween and having a second opening that communicates with the first opening and is smaller than the first opening.Type: GrantFiled: September 4, 2019Date of Patent: April 16, 2024Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Yuya Kumagai, Shuji Manda, Shunsuke Maruyama, Ryosuke Matsumoto
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Patent number: 11948962Abstract: Various embodiments of the present disclosure are directed towards a semiconductor structure including a photodetector disposed within a substrate. A grid structure is disposed over the substrate and the photodetector. A conductive layer is disposed between the grid structure and the substrate. A conductive contact extends into an upper surface of the substrate. The conductive layer is directly electrically coupled to the conductive contact.Type: GrantFiled: June 16, 2022Date of Patent: April 2, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ching-Chung Su, Jiech-Fun Lu
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Patent number: 11940323Abstract: An electromagnetic wave module comprising a chip and a lens unit. The chip has a first face, a second face opposed to the first face, and a third face connecting the first face and the second face. The lens unit has a curved face forming a lens, a fourth face opposed to the curved face, and a recessed portion encompassed in an outer edge of the curved face on a projected plane in an optical axis of the lens. The recessed portion has a fifth face disposed at a position closer to the curved face than the fourth face, and a sixth face connecting the fifth face and the fourth face. At least a part of the sixth face of the recessed portion is in contact with at least a part of the third face of the chip.Type: GrantFiled: November 19, 2021Date of Patent: March 26, 2024Assignee: Canon Kabushiki KaishaInventor: Takeaki Itsuji
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Patent number: 11942496Abstract: A digital image sensor package includes an image sensor substrate and a glass covering. The image sensor substrate carries photodiodes. The glass covering has a bottom surface, a top surface opposite the bottom surface, and a sidewall delimiting a perimeter edge of the glass covering. The glass covering overlies the photodiodes. A surface area of the top surface of the glass covering is greater than a surface area of the bottom surface of the glass covering such that the sidewall is anti-perpendicular to the top and bottom surfaces of the glass.Type: GrantFiled: May 21, 2021Date of Patent: March 26, 2024Assignee: STMicroelectronics Pte LtdInventors: Laurent Herard, David Gani
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Patent number: 11933555Abstract: A heat dissipation device may be formed having at least one isotropic thermally conductive section (uniformly high thermal conductivity in all directions) and at least one anisotropic thermally conductive section (high thermal conductivity in at least one direction and low thermal conductivity in at least one other direction). The heat dissipation device may be thermally coupled to a plurality of integrated circuit devices such that at least a portion of the isotropic thermally conductive section(s) and/or the anisotropic thermally conductive section(s) is positioned over at least one integrated circuit device.Type: GrantFiled: October 25, 2021Date of Patent: March 19, 2024Assignee: Intel CorporationInventors: Feras Eid, Adel Elsherbini, Johanna Swan
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Patent number: 11931601Abstract: An imager includes: an array of imager elements configured to generate image signals based on radiation received by the imager; and circuit configured to perform readout of image signals, wherein the circuit is configured to be radiation hard. An imager includes: an array of imager elements configured to generate image signals based on the radiation received by the imager; and readout and control circuit coupled to the array of imager elements, wherein the readout and control circuit is configured to perform signal readout in synchronization with an operation of a treatment beam source.Type: GrantFiled: September 21, 2022Date of Patent: March 19, 2024Assignee: SIEMENS HEALTHINEERS INTERNATIONAL AGInventors: Daniel Morf, Martin Amstutz
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Patent number: 11930287Abstract: An imaging element according to an embodiment includes: a light receiving unit including a plurality of photoelectric conversion elements arranged in a lattice-pattern array, and a plurality of lenses provided for respective sets of elements on a one-to-one basis, each set of elements including two or more of the plurality of photoelectric conversion elements arranged adjacent to each other. In the light receiving unit, among a plurality of pixel sets each including the set of elements and one of the plurality of lenses provided in the set of elements, at least two pixel sets adjacent to each other are different from each other in pupil correction amount.Type: GrantFiled: May 1, 2020Date of Patent: March 12, 2024Assignee: Sony Semiconductor Solutions CorporationInventor: Hiroshi Katayama
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Patent number: 11923388Abstract: An image sensing device includes a semiconductor substrate, a plurality of photoelectric conversion elements supported by the semiconductor substrate, each photoelectric conversion elements configured to generate an electrical signal corresponding to incident light by performing a photoelectric conversion of the incident light, a plurality of color filters disposed over the semiconductor substrate to filter incident light to be received by the photoelectric conversion elements, each color filter configured to allow light having a specific color to pass therethrough, and a grid structure disposed between the color filters and structured to include asymmetric sidewalls that are shaped based on colors of adjacent color filters.Type: GrantFiled: March 15, 2021Date of Patent: March 5, 2024Assignee: SK HYNIX INC.Inventor: Sun Ho Oh
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Patent number: 11923396Abstract: An integrated circuit includes a photodetector. The photodetector includes one or more dielectric structures positioned in a trench in a semiconductor substrate. The photodetector includes a photosensitive material positioned in the trench and covering the one or more dielectric structures. A dielectric layer covers the photosensitive material. The photosensitive material has an index of refraction that is greater than the indices of refraction of the dielectric structures and the dielectric layer.Type: GrantFiled: April 18, 2022Date of Patent: March 5, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chun-Wei Hsu, Tsai-Hao Hung, Chung-Yu Lin, Ying-Hsun Chen
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Patent number: 11912918Abstract: The invention provides a method for providing a luminescent particle (100) with a hybrid coating, the method comprising: (i) providing a luminescent core (102) comprising a primer layer (105) on the luminescent core (102); (ii) providing a main ALD coating layer (120) onto the primer layer (105) by application of a main atomic layer deposition process, the main ALD coating layer (120) comprising a multilayer (1120) with two or more layers (1121) having different chemical compositions, and wherein in the main atomic layer deposition process a metal oxide precursor is selected from a group of metal oxide precursors comprising Al, Zn, Hf, Ta, Zr, Ti, Sn, Nb, Y, Ga, and V; (iii) providing a main sol-gel coating layer (130) onto the main ALD-coating layer (120) by application of a main sol-gel coating process, the main sol-gel coating layer (130) having a chemical composition different from one or more of the layers (1121) of the multilayer (1120).Type: GrantFiled: June 29, 2021Date of Patent: February 27, 2024Assignee: LUMILEDS LLCInventors: Jens Meyer, Andreas Tücks, Peter Josef Schmidt, Erik Roeling
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Patent number: 11901380Abstract: A solid-state image sensor is provided. The solid-state image sensor includes a semiconductor substrate having photoelectric conversion elements. The photoelectric conversion elements form an N×N pixel array, where N is a positive integer larger than or equal to 3. The solid-state image sensor also includes a modulation layer disposed above the photoelectric conversion elements. The solid-state image sensor further includes a light-adjusting structure disposed on the modulation layer and corresponding to the N×N pixel array. The N×N pixel array includes a first pixel region having at least one first pixel. The N×N pixel array also includes a second pixel region adjacent to the first pixel region in a first direction and in a second direction different from the first direction and having second pixels. The aperture ratio of the first pixel and the aperture ratio of the second pixel are different.Type: GrantFiled: November 30, 2020Date of Patent: February 13, 2024Assignee: VISERA TECHNOLOGIES COMPANY LIMITEDInventors: Hui-Min Yang, Zong-Ru Tu, Yu-Chi Chang, Han-Lin Wu
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Patent number: 11892665Abstract: A colloidal crystal structure includes a colloidal crystal layer including a plurality of colloidal particles and a binder disposed between the plurality of colloidal particles to fix the colloidal particles, and a refractive index control material that is provided on one surface of the colloidal structural layer, is transparent, and has a refractive index difference of less than 10% with respect to the binder. A light-emitting device includes an optical filter including the colloidal crystal structure, and a light source, and a part of primary light emitted by the light source passes through the optical filter. A lighting system includes the light-emitting device.Type: GrantFiled: January 15, 2020Date of Patent: February 6, 2024Assignee: Panasonic Intellectual Property Management Co., Ltd.Inventors: Ryosuke Shigitani, Shumpei Fujii
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Patent number: 11889211Abstract: An imaging element according to an embodiment includes: a light receiving unit including a plurality of photoelectric conversion elements arranged in a lattice-pattern array, and a plurality of lenses provided for respective sets of elements on a one-to-one basis, each set of elements including two or more of the plurality of photoelectric conversion elements arranged adjacent to each other. In the light receiving unit, among a plurality of pixel sets each including the set of elements and one of the plurality of lenses provided in the set of elements, at least two pixel sets adjacent to each other are different from each other in pupil correction amount.Type: GrantFiled: May 1, 2020Date of Patent: January 30, 2024Assignee: Sony Semiconductor Solutions CorporationInventor: Hiroshi Katayama
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Patent number: 11877078Abstract: The deterioration of light condensing characteristics of an overall solid-state imaging device resulting from providing in-layer lenses is suppressed while preventing the deterioration of device characteristics of the solid-state imaging device and reduction of yield.Type: GrantFiled: January 11, 2023Date of Patent: January 16, 2024Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Kenta Nojima, Kenju Nishikido
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Patent number: 11869911Abstract: The present disclosure relates to an imaging element and an electronic apparatus configured to achieve higher-resolution image taking. The imaging element includes: a photoelectric conversion portion provided in a semiconductor substrate for each pixel that performs photoelectric conversion on light that enters through a filter layer; an element isolation portion configured to separate the photoelectric conversion portions of adjacent pixels; and an inter-pixel light shielding portion disposed between the pixels in a layer and provided between the semiconductor substrate and the filter layer and separated from a light receiving surface of the semiconductor substrate by a predetermined interval. Moreover, an interval between the light receiving surface of the semiconductor substrate and a tip end surface of the inter-pixel light shielding portion is smaller than a width of the tip end surface of the inter-pixel light shielding portion.Type: GrantFiled: February 28, 2022Date of Patent: January 9, 2024Assignee: Sony Semiconductor Solutions CorporationInventor: Hirotoshi Nomura
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Patent number: 11871100Abstract: Disclosed are a camera module, a blocking-type photosensitive assembly, a manufacturing method thereof, and an electronic device. The camera module includes a blocking-type photosensitive assembly and at least one motor camera lens assembly arranged on the blocking-type photosensitive assembly. The blocking-type photosensitive assembly includes a molded photosensitive assembly and a blocking structure arranged on the molded photosensitive assembly. A blocking surface of the blocking structure is higher than an upper surface of a filter element, and at least a part of the projection of the blocking surface of the blocking structure on the molded photosensitive assembly overlaps with the projection of an optical lens of the motor camera lens assembly on the molded photosensitive assembly to block the optical lens from directly contacting the filter element.Type: GrantFiled: March 2, 2020Date of Patent: January 9, 2024Assignee: NINGBO SUNNY OPOTECH CO., LTD.Inventors: Zhen Huang, Zhongyu Luan, Zongchun Yang, Lifeng Kan, Chenxiang Xu
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Patent number: 11862656Abstract: There is provided a semiconductor device including: a plurality of bumps on a first semiconductor substrate; and a lens material in a region other than the plurality of bumps on the first semiconductor substrate, wherein a distance between a side of a bump closest to the lens material and a side of the lens material closest to the bump is greater than twice a diameter of the bump closest to the lens material, and wherein the distance between the side of the bump closest to the lens material and the side of the lens material closest to the bump is greater a minimum pitch of the bumps.Type: GrantFiled: April 5, 2022Date of Patent: January 2, 2024Assignee: SONY GROUP CORPORATIONInventors: Jun Ogi, Junichiro Fujimagari, Susumu Inoue, Atsushi Fujiwara
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Patent number: 11862927Abstract: There are provided high power, high brightness solid-state laser systems that maintain initial beam properties, including power levels, and do not have degradation of performance or beam quality, for at least 10,000 hours of operation. There are provided high power, high brightness solid-state laser systems containing Oxygen in their internal environments and which are free from siloxanes.Type: GrantFiled: February 3, 2020Date of Patent: January 2, 2024Assignee: Nuburu, Inc.Inventors: Jean-Philippe Feve, Matthew Silva Sa, Monica Greenlief, Donald Millick, Denis Brisson, Nathaniel Dick, Mark S Zediker
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Patent number: 11848350Abstract: An image sensor is fabricated by first heavily p-type doping the thin top monocrystalline silicon substrate of an SOI wafer, then forming a relatively lightly p-doped epitaxial layer on a top surface of the top silicon substrate, where p-type doping levels during these two processes are controlled to produce a p-type dopant concentration gradient in the top silicon substrate. Sensing (circuit) elements and associated metal interconnects are fabricated on the epitaxial layer, then the handling substrate and oxide layer of the SOI wafer are at least partially removed to expose a lower surface of either the top silicon substrate or the epitaxial layer, and then a pure boron layer is formed on the exposed lower surface. The p-type dopant concentration gradient monotonically decreases from a maximum level near the top-silicon/epitaxial-layer interface to a minimum concentration level at the epitaxial layer's upper surface.Type: GrantFiled: March 10, 2021Date of Patent: December 19, 2023Assignee: KLA CorporationInventors: Abbas Haddadi, Sisir Yalamanchili, John Fielden, Yung-Ho Alex Chuang
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Patent number: 11848398Abstract: A flat bonding method of light emitting devices including bonding light emitting devices on a circuit board using a reflow process, and re-bonding at least a portion of the light emitting devices bonded on the circuit board using a press plate while pressing the portion of the light emitting devices.Type: GrantFiled: December 24, 2020Date of Patent: December 19, 2023Assignee: SEOUL VIOSYS CO., LTD.Inventor: Ik Kyu You
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Patent number: 11843018Abstract: An imaging device includes a first photoelectric conversion region (170) receiving light within a first range of wavelengths, a second photoelectric conversion region (170) receiving light within a second range of wavelengths, and a third photoelectric conversion region (170) receiving light within a third range of wavelengths. At least a portion of a light-receiving surface of the first photoelectric conversion region has a first concave-convex structure (113), and a light-receiving surface of the second photoelectric conversion region has a different structure (111) than the first concave-convex structure.Type: GrantFiled: July 13, 2018Date of Patent: December 12, 2023Assignee: Sony Semiconductor Solutions CorporationInventor: Sozo Yokogawa
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Patent number: 11837618Abstract: An image sensor includes a semiconductor substrate having a plurality of pixel regions arranged in a first direction and a second direction that are parallel to an upper surface of the semiconductor substrate. The first direction is perpendicular to the second direction. A grid structure extends in the first direction and the second direction on the semiconductor substrate to define openings corresponding to a plurality of sub-pixel regions of the plurality of the pixel regions, respectively. Color filters are disposed in the openings of the grid structure, respectively. A protective layer covers sidewalls of the grid structure and bottom surfaces of the color filters. The protective layer includes silicon oxide including carbon (C) or nitrogen (N).Type: GrantFiled: August 21, 2020Date of Patent: December 5, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jaesung Hur, Taeksoo Jeon, Jongmin Baek, Sanghoon Ahn, Jangho Lee, Kyu-Hee Han
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Patent number: 11825666Abstract: An imaging element according to an embodiment of the present disclosure includes: a first electrode including a plurality of electrodes; a second electrode opposed to the first electrode; a photoelectric conversion layer including an organic material provided between the first electrode and the second electrode; a first semiconductor layer provided between the first electrode and the photoelectric conversion layer, and including an n-type semiconductor material; and a second semiconductor layer provided between the second electrode and the photoelectric conversion layer, and including at least one of a carbon-containing compound having an electron affinity larger than a work function of the first electrode or an inorganic compound having a work function larger than the work function of the first electrode.Type: GrantFiled: July 30, 2019Date of Patent: November 21, 2023Assignees: Sony Corporation, Sony Semiconductor Solutions CorporationInventors: Yosuke Saito, Masashi Bando, Yukio Kaneda, Yoshiyuki Hirano, Toshiki Moriwaki
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Patent number: 11810893Abstract: An interposer sandwich structure includes a top interposer and a bottom interposer enclosing an integrated circuit electronic device that includes an attachment for attaching the device to the bottom interposer, and an interconnection structure connecting the top interposer to the bottom interposer. The top interposer may also be directly connected to a chip carrier in addition to the bottom interposer. The structure provides shielding and protection of the device against Electrostatic Discharge (ESD), Electromagnetic Interference (EMI), and Electromagnetic Conductivity (EMC) in miniaturized 3D packaging.Type: GrantFiled: May 31, 2021Date of Patent: November 7, 2023Assignee: International Business Machines CorporationInventors: William Emmett Bernier, Bing Dang, John Knickerbocker, Son Kim Tran, Mario J. Interrante
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Patent number: 11792542Abstract: An imaging device includes: an effective pixel region that includes a plurality of imaging elements-A, amplifies signal charges generated by photoelectric conversion, and reads the signal charges into a drive circuit; and an optical black region that includes a plurality of imaging elements-B, surrounds the effective pixel region, and outputs optical black that serves as the reference for black level. In the imaging device, the photoelectric conversion layer forming the plurality of imaging elements-A and the plurality of imaging elements-B is a common photoelectric conversion layer, the common photoelectric conversion layer is located on an outer side of the optical black region, and extends toward an outer edge region surrounding the optical black region, and an outer edge electrode is disposed in the outer edge region.Type: GrantFiled: August 31, 2022Date of Patent: October 17, 2023Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Tetsuro Takada, Taiichiro Watanabe
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Patent number: 11778841Abstract: To provide a photoelectric conversion element that can improve image quality. Provided is a photoelectric conversion element (100) including at least a first electrode (101), a work function control layer (108), a photoelectric conversion layer (102), an oxide semiconductor layer (104), and a second electrode (107) in this order, and further including a third electrode (105), in which the third electrode (105) is provided apart from the second electrode (107) and is provided facing the photoelectric conversion layer (102) via an insulating layer (106), and the work function control layer (108) contains a larger amount of oxygen than an amount of oxygen satisfying a stoichiometric composition.Type: GrantFiled: July 30, 2019Date of Patent: October 3, 2023Assignees: SONY CORPORATION, SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Shintarou Hirata, Masahiro Joei, Kenichi Murata, Masashi Bando, Yosuke Saito, Ryosuke Suzuki
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Patent number: 11776978Abstract: The present disclosure relates to a solid-state image pickup device and an electronic apparatus that are capable of preventing leakage of charges between adjacent pixels. A plurality of pixels perform photoelectric conversion on light incident from a back surface via different on-chip lenses for each pixel. A pixel separation wall is formed between pixels adjacent to each other, and includes a front-side trench formed from a front surface and a backside trench formed from the back surface. A wiring layer is provided on the front surface. The present disclosure is applicable to, for example, a backside illuminated CMOS image sensor.Type: GrantFiled: July 13, 2022Date of Patent: October 3, 2023Assignee: Sony Group CorporationInventors: Atsushi Masagaki, Yusuke Tanaka
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Patent number: 11776985Abstract: A method of fabricating self-aligned grids in a BSI image sensor is provided. The method includes depositing a first dielectric layer over a back surface of a substrate that has a plurality of photodiodes formed therein, forming a grid of trenches, and filling in the trenches with dielectric material to create a trench isolation grid. Here, a trench passes through the first dielectric layer and extends into the substrate. The method further includes etching back dielectric material in the trenches to a level that is below an upper surface of the first dielectric layer to form recesses overlaying the trench isolation grid, and filling in the recesses with metallic material to create a metallic grid that is aligned with the trench isolation grid.Type: GrantFiled: May 6, 2021Date of Patent: October 3, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tsun-Kai Tsao, Jiech-Fun Lu, Shih-Pei Chou, Wei Chuang Wu
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Patent number: 11764239Abstract: A method for forming an image sensor package is provided. An image sensor chip is formed over a package substrate. A protection layer is formed overlying the image sensor chip. The protection layer has a planar top surface and a bottom surface lining and contacting structures under the protection layer. An opening is formed into the protection layer and spaced around a periphery of the image sensor chip. A light shielding material is filled in the opening to form an on-wafer shield structure having a sidewall directly contact the protection layer.Type: GrantFiled: February 10, 2022Date of Patent: September 19, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wen-Hau Wu, Chun-Hao Chuang, Kazuaki Hashimoto, Keng-Yu Chou, Wei-Chieh Chiang, Cheng Yu Huang
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Patent number: 11765485Abstract: A photoelectric conversion apparatus includes a driving unit and a plurality of pixels. The pixel includes a first photoelectric conversion unit, a second photoelectric conversion unit, a charge-voltage conversion unit, a first transfer transistor, a second transfer transistor, a reset transistor, a microlens configured to condense incident light to the first photoelectric conversion unit and the second photoelectric conversion unit, and an output unit. The driving unit performs a first operation including a first reset operation and a first readout operation, and a second operation including a second reset operation and a second readout operation.Type: GrantFiled: July 29, 2022Date of Patent: September 19, 2023Assignee: Canon Kabushiki KaishaInventor: Kazuki Ohshitanai
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Patent number: 11764878Abstract: Multi-chip modules in different semiconductor packages may be optically data coupled by way of LEDs and photodetectors linked by a multicore fiber. The multicore fiber may pass through apertures in the semiconductor packages, with an array of LEDs and photodetectors in the semiconductor package providing and receiving, respectively, optical signals comprised of data passed between the multi-chip modules.Type: GrantFiled: March 7, 2022Date of Patent: September 19, 2023Assignee: AVICENATECH CORP.Inventors: Bardia Pezeshki, Robert Kalman, Alexander Tselikov, Cameron Danesh
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Patent number: 11754783Abstract: Described herein are photonic communication platforms that can overcome the memory bottleneck problem, thereby enabling scaling of memory capacity and bandwidth well beyond what is possible with conventional computing systems. Some embodiments provide photonic communication platforms that involve use of photonic modules. Each photonic module includes programmable photonic circuits for placing the module in optical communication with other modules based on the needs of a particular application. The architecture developed by the inventors relies on the use of common photomask sets (or at least one common photomask) to fabricate multiple photonic modules in a single wafer. Photonic modules in multiple wafers can be linked together into a communication platform using optical or electronic means.Type: GrantFiled: May 6, 2021Date of Patent: September 12, 2023Assignee: Lightmatter, Inc.Inventors: Nicholas C. Harris, Carl Ramey, Michael Gould, Thomas Graham, Darius Bunandar, Ryan Braid, Mykhailo Tymchenko
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Patent number: 11749703Abstract: To solve at least one of various problems in an image sensor in a 2PD scheme. A solid-state image pickup element includes a plurality of pixels each including a photoelectric conversion element formed on a silicon substrate, in which some pixels in the plurality of pixels each have the photoelectric conversion element partitioned by a first-type separating region extending in a plate shape in a direction along a thickness direction of the silicon substrate, and other pixels in the plurality of pixels each have the photoelectric conversion element partitioned by a second-type separating region formed with a material different from a material of the first-type separating region, the second-type separating region extending in a plate shape in the direction along the thickness direction of the silicon substrate.Type: GrantFiled: June 15, 2021Date of Patent: September 5, 2023Assignee: SONY GROUP CORPORATIONInventor: Shinichiro Noudo
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Patent number: 11743611Abstract: Provided is an image sensor including a first pixel including a first floating diffusion region and a second floating diffusion region, a second pixel including a first floating diffusion region, a second floating diffusion region, and a third floating diffusion region, a third pixel including a first floating diffusion region and a second floating diffusion region, and a fourth pixel including a first floating diffusion region, a second floating diffusion region, and a third floating diffusion region, wherein the second floating diffusion region of the first pixel and the second floating diffusion region of the second pixel are connected through a first metal line, and wherein the third floating diffusion region of the second pixel and the third floating diffusion region of the third pixel are connected through a second metal.Type: GrantFiled: July 8, 2022Date of Patent: August 29, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jungbin Yun, Hwanwoong Kim, Eunsub Shim, Kyungho Lee, Hongsuk Lee
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Patent number: 11736829Abstract: The pixel region includes a first phase difference pixel group including a plurality of the phase difference pixels of which the first side of the photoelectric conversion element is blocked by the light blocking layer in a first side region of the first side, and a second phase difference pixel group including a plurality of the phase difference pixels of which the second side of the photoelectric conversion element is blocked by the light blocking layer. The first phase difference pixel group includes a first A pixel and a first B pixel in which a light blocking area of the photoelectric conversion element using the light blocking layer is smaller than that of the first A pixel. The controller performs addition readout processing in which at least one of a pixel signal of the first A pixel or a pixel signal of the first B pixel is weighted in accordance with optical characteristics of the imaging lens.Type: GrantFiled: August 22, 2022Date of Patent: August 22, 2023Assignee: FUJIFILM CorporationInventors: Koichi Tanaka, Tomoyuki Kawai, Junya Kitagawa, Yuya Nishio