With Optical Element Patents (Class 257/432)
  • Patent number: 11985433
    Abstract: An HMD includes a single photon avalanche diode (SPAD) array comprising a plurality of SPAD pixels. The HMD also includes a display positioned to display images for viewing by an eye of a user. The HMD also includes one or more processors and one or more hardware storage devices storing instructions that are executable by the one or more processors to configure the HMD to perform various acts associated with using the SPAD array to capture an image frame of an environment for display to the user.
    Type: Grant
    Filed: November 30, 2020
    Date of Patent: May 14, 2024
    Assignee: Microsoft Technology Licensing, LLC
    Inventors: Raymond Kirk Price, Michael Bleyer, Christopher Douglas Edmonds
  • Patent number: 11966104
    Abstract: An optical modulator includes a substrate having a main surface including a first area and a second area, an optical modulation portion disposed on the first area, and an optical waveguide portion disposed on the second area. The optical modulation portion includes a first mesa waveguide and an electrode connected to the first mesa waveguide. The first mesa waveguide includes a p-type semiconductor layer, a first core layer, and an n-type semiconductor layer. The optical waveguide portion includes a second mesa waveguide. The second mesa waveguide includes a first cladding layer, a second core layer, and a second cladding layer. The second core layer is optically coupled to the first core layer. The first cladding layer contains a p-type dopant and protons. The second cladding layer contains an n-type dopant.
    Type: Grant
    Filed: May 19, 2022
    Date of Patent: April 23, 2024
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Makoto Ogasawara, Naoya Kono, Mitsuru Ekawa
  • Patent number: 11961863
    Abstract: An imaging element including: a photoelectric conversion layer including a compound semiconductor material; a contact layer disposed to be stacked on the photoelectric conversion layer and including a diffusion region of first electrically-conductive type impurities in a selective region; a first insulating layer provided to be opposed to the photoelectric conversion layer with the contact layer interposed therebetween and having a first opening at a position facing the diffusion region; and a second insulating layer provided to be opposed to the contact layer with the first insulating layer interposed therebetween and having a second opening that communicates with the first opening and is smaller than the first opening.
    Type: Grant
    Filed: September 4, 2019
    Date of Patent: April 16, 2024
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Yuya Kumagai, Shuji Manda, Shunsuke Maruyama, Ryosuke Matsumoto
  • Patent number: 11948962
    Abstract: Various embodiments of the present disclosure are directed towards a semiconductor structure including a photodetector disposed within a substrate. A grid structure is disposed over the substrate and the photodetector. A conductive layer is disposed between the grid structure and the substrate. A conductive contact extends into an upper surface of the substrate. The conductive layer is directly electrically coupled to the conductive contact.
    Type: Grant
    Filed: June 16, 2022
    Date of Patent: April 2, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ching-Chung Su, Jiech-Fun Lu
  • Patent number: 11940323
    Abstract: An electromagnetic wave module comprising a chip and a lens unit. The chip has a first face, a second face opposed to the first face, and a third face connecting the first face and the second face. The lens unit has a curved face forming a lens, a fourth face opposed to the curved face, and a recessed portion encompassed in an outer edge of the curved face on a projected plane in an optical axis of the lens. The recessed portion has a fifth face disposed at a position closer to the curved face than the fourth face, and a sixth face connecting the fifth face and the fourth face. At least a part of the sixth face of the recessed portion is in contact with at least a part of the third face of the chip.
    Type: Grant
    Filed: November 19, 2021
    Date of Patent: March 26, 2024
    Assignee: Canon Kabushiki Kaisha
    Inventor: Takeaki Itsuji
  • Patent number: 11942496
    Abstract: A digital image sensor package includes an image sensor substrate and a glass covering. The image sensor substrate carries photodiodes. The glass covering has a bottom surface, a top surface opposite the bottom surface, and a sidewall delimiting a perimeter edge of the glass covering. The glass covering overlies the photodiodes. A surface area of the top surface of the glass covering is greater than a surface area of the bottom surface of the glass covering such that the sidewall is anti-perpendicular to the top and bottom surfaces of the glass.
    Type: Grant
    Filed: May 21, 2021
    Date of Patent: March 26, 2024
    Assignee: STMicroelectronics Pte Ltd
    Inventors: Laurent Herard, David Gani
  • Patent number: 11933555
    Abstract: A heat dissipation device may be formed having at least one isotropic thermally conductive section (uniformly high thermal conductivity in all directions) and at least one anisotropic thermally conductive section (high thermal conductivity in at least one direction and low thermal conductivity in at least one other direction). The heat dissipation device may be thermally coupled to a plurality of integrated circuit devices such that at least a portion of the isotropic thermally conductive section(s) and/or the anisotropic thermally conductive section(s) is positioned over at least one integrated circuit device.
    Type: Grant
    Filed: October 25, 2021
    Date of Patent: March 19, 2024
    Assignee: Intel Corporation
    Inventors: Feras Eid, Adel Elsherbini, Johanna Swan
  • Patent number: 11931601
    Abstract: An imager includes: an array of imager elements configured to generate image signals based on radiation received by the imager; and circuit configured to perform readout of image signals, wherein the circuit is configured to be radiation hard. An imager includes: an array of imager elements configured to generate image signals based on the radiation received by the imager; and readout and control circuit coupled to the array of imager elements, wherein the readout and control circuit is configured to perform signal readout in synchronization with an operation of a treatment beam source.
    Type: Grant
    Filed: September 21, 2022
    Date of Patent: March 19, 2024
    Assignee: SIEMENS HEALTHINEERS INTERNATIONAL AG
    Inventors: Daniel Morf, Martin Amstutz
  • Patent number: 11930287
    Abstract: An imaging element according to an embodiment includes: a light receiving unit including a plurality of photoelectric conversion elements arranged in a lattice-pattern array, and a plurality of lenses provided for respective sets of elements on a one-to-one basis, each set of elements including two or more of the plurality of photoelectric conversion elements arranged adjacent to each other. In the light receiving unit, among a plurality of pixel sets each including the set of elements and one of the plurality of lenses provided in the set of elements, at least two pixel sets adjacent to each other are different from each other in pupil correction amount.
    Type: Grant
    Filed: May 1, 2020
    Date of Patent: March 12, 2024
    Assignee: Sony Semiconductor Solutions Corporation
    Inventor: Hiroshi Katayama
  • Patent number: 11923396
    Abstract: An integrated circuit includes a photodetector. The photodetector includes one or more dielectric structures positioned in a trench in a semiconductor substrate. The photodetector includes a photosensitive material positioned in the trench and covering the one or more dielectric structures. A dielectric layer covers the photosensitive material. The photosensitive material has an index of refraction that is greater than the indices of refraction of the dielectric structures and the dielectric layer.
    Type: Grant
    Filed: April 18, 2022
    Date of Patent: March 5, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Wei Hsu, Tsai-Hao Hung, Chung-Yu Lin, Ying-Hsun Chen
  • Patent number: 11923388
    Abstract: An image sensing device includes a semiconductor substrate, a plurality of photoelectric conversion elements supported by the semiconductor substrate, each photoelectric conversion elements configured to generate an electrical signal corresponding to incident light by performing a photoelectric conversion of the incident light, a plurality of color filters disposed over the semiconductor substrate to filter incident light to be received by the photoelectric conversion elements, each color filter configured to allow light having a specific color to pass therethrough, and a grid structure disposed between the color filters and structured to include asymmetric sidewalls that are shaped based on colors of adjacent color filters.
    Type: Grant
    Filed: March 15, 2021
    Date of Patent: March 5, 2024
    Assignee: SK HYNIX INC.
    Inventor: Sun Ho Oh
  • Patent number: 11912918
    Abstract: The invention provides a method for providing a luminescent particle (100) with a hybrid coating, the method comprising: (i) providing a luminescent core (102) comprising a primer layer (105) on the luminescent core (102); (ii) providing a main ALD coating layer (120) onto the primer layer (105) by application of a main atomic layer deposition process, the main ALD coating layer (120) comprising a multilayer (1120) with two or more layers (1121) having different chemical compositions, and wherein in the main atomic layer deposition process a metal oxide precursor is selected from a group of metal oxide precursors comprising Al, Zn, Hf, Ta, Zr, Ti, Sn, Nb, Y, Ga, and V; (iii) providing a main sol-gel coating layer (130) onto the main ALD-coating layer (120) by application of a main sol-gel coating process, the main sol-gel coating layer (130) having a chemical composition different from one or more of the layers (1121) of the multilayer (1120).
    Type: Grant
    Filed: June 29, 2021
    Date of Patent: February 27, 2024
    Assignee: LUMILEDS LLC
    Inventors: Jens Meyer, Andreas Tücks, Peter Josef Schmidt, Erik Roeling
  • Patent number: 11901380
    Abstract: A solid-state image sensor is provided. The solid-state image sensor includes a semiconductor substrate having photoelectric conversion elements. The photoelectric conversion elements form an N×N pixel array, where N is a positive integer larger than or equal to 3. The solid-state image sensor also includes a modulation layer disposed above the photoelectric conversion elements. The solid-state image sensor further includes a light-adjusting structure disposed on the modulation layer and corresponding to the N×N pixel array. The N×N pixel array includes a first pixel region having at least one first pixel. The N×N pixel array also includes a second pixel region adjacent to the first pixel region in a first direction and in a second direction different from the first direction and having second pixels. The aperture ratio of the first pixel and the aperture ratio of the second pixel are different.
    Type: Grant
    Filed: November 30, 2020
    Date of Patent: February 13, 2024
    Assignee: VISERA TECHNOLOGIES COMPANY LIMITED
    Inventors: Hui-Min Yang, Zong-Ru Tu, Yu-Chi Chang, Han-Lin Wu
  • Patent number: 11892665
    Abstract: A colloidal crystal structure includes a colloidal crystal layer including a plurality of colloidal particles and a binder disposed between the plurality of colloidal particles to fix the colloidal particles, and a refractive index control material that is provided on one surface of the colloidal structural layer, is transparent, and has a refractive index difference of less than 10% with respect to the binder. A light-emitting device includes an optical filter including the colloidal crystal structure, and a light source, and a part of primary light emitted by the light source passes through the optical filter. A lighting system includes the light-emitting device.
    Type: Grant
    Filed: January 15, 2020
    Date of Patent: February 6, 2024
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Ryosuke Shigitani, Shumpei Fujii
  • Patent number: 11889211
    Abstract: An imaging element according to an embodiment includes: a light receiving unit including a plurality of photoelectric conversion elements arranged in a lattice-pattern array, and a plurality of lenses provided for respective sets of elements on a one-to-one basis, each set of elements including two or more of the plurality of photoelectric conversion elements arranged adjacent to each other. In the light receiving unit, among a plurality of pixel sets each including the set of elements and one of the plurality of lenses provided in the set of elements, at least two pixel sets adjacent to each other are different from each other in pupil correction amount.
    Type: Grant
    Filed: May 1, 2020
    Date of Patent: January 30, 2024
    Assignee: Sony Semiconductor Solutions Corporation
    Inventor: Hiroshi Katayama
  • Patent number: 11877078
    Abstract: The deterioration of light condensing characteristics of an overall solid-state imaging device resulting from providing in-layer lenses is suppressed while preventing the deterioration of device characteristics of the solid-state imaging device and reduction of yield.
    Type: Grant
    Filed: January 11, 2023
    Date of Patent: January 16, 2024
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Kenta Nojima, Kenju Nishikido
  • Patent number: 11869911
    Abstract: The present disclosure relates to an imaging element and an electronic apparatus configured to achieve higher-resolution image taking. The imaging element includes: a photoelectric conversion portion provided in a semiconductor substrate for each pixel that performs photoelectric conversion on light that enters through a filter layer; an element isolation portion configured to separate the photoelectric conversion portions of adjacent pixels; and an inter-pixel light shielding portion disposed between the pixels in a layer and provided between the semiconductor substrate and the filter layer and separated from a light receiving surface of the semiconductor substrate by a predetermined interval. Moreover, an interval between the light receiving surface of the semiconductor substrate and a tip end surface of the inter-pixel light shielding portion is smaller than a width of the tip end surface of the inter-pixel light shielding portion.
    Type: Grant
    Filed: February 28, 2022
    Date of Patent: January 9, 2024
    Assignee: Sony Semiconductor Solutions Corporation
    Inventor: Hirotoshi Nomura
  • Patent number: 11871100
    Abstract: Disclosed are a camera module, a blocking-type photosensitive assembly, a manufacturing method thereof, and an electronic device. The camera module includes a blocking-type photosensitive assembly and at least one motor camera lens assembly arranged on the blocking-type photosensitive assembly. The blocking-type photosensitive assembly includes a molded photosensitive assembly and a blocking structure arranged on the molded photosensitive assembly. A blocking surface of the blocking structure is higher than an upper surface of a filter element, and at least a part of the projection of the blocking surface of the blocking structure on the molded photosensitive assembly overlaps with the projection of an optical lens of the motor camera lens assembly on the molded photosensitive assembly to block the optical lens from directly contacting the filter element.
    Type: Grant
    Filed: March 2, 2020
    Date of Patent: January 9, 2024
    Assignee: NINGBO SUNNY OPOTECH CO., LTD.
    Inventors: Zhen Huang, Zhongyu Luan, Zongchun Yang, Lifeng Kan, Chenxiang Xu
  • Patent number: 11862656
    Abstract: There is provided a semiconductor device including: a plurality of bumps on a first semiconductor substrate; and a lens material in a region other than the plurality of bumps on the first semiconductor substrate, wherein a distance between a side of a bump closest to the lens material and a side of the lens material closest to the bump is greater than twice a diameter of the bump closest to the lens material, and wherein the distance between the side of the bump closest to the lens material and the side of the lens material closest to the bump is greater a minimum pitch of the bumps.
    Type: Grant
    Filed: April 5, 2022
    Date of Patent: January 2, 2024
    Assignee: SONY GROUP CORPORATION
    Inventors: Jun Ogi, Junichiro Fujimagari, Susumu Inoue, Atsushi Fujiwara
  • Patent number: 11862927
    Abstract: There are provided high power, high brightness solid-state laser systems that maintain initial beam properties, including power levels, and do not have degradation of performance or beam quality, for at least 10,000 hours of operation. There are provided high power, high brightness solid-state laser systems containing Oxygen in their internal environments and which are free from siloxanes.
    Type: Grant
    Filed: February 3, 2020
    Date of Patent: January 2, 2024
    Assignee: Nuburu, Inc.
    Inventors: Jean-Philippe Feve, Matthew Silva Sa, Monica Greenlief, Donald Millick, Denis Brisson, Nathaniel Dick, Mark S Zediker
  • Patent number: 11848350
    Abstract: An image sensor is fabricated by first heavily p-type doping the thin top monocrystalline silicon substrate of an SOI wafer, then forming a relatively lightly p-doped epitaxial layer on a top surface of the top silicon substrate, where p-type doping levels during these two processes are controlled to produce a p-type dopant concentration gradient in the top silicon substrate. Sensing (circuit) elements and associated metal interconnects are fabricated on the epitaxial layer, then the handling substrate and oxide layer of the SOI wafer are at least partially removed to expose a lower surface of either the top silicon substrate or the epitaxial layer, and then a pure boron layer is formed on the exposed lower surface. The p-type dopant concentration gradient monotonically decreases from a maximum level near the top-silicon/epitaxial-layer interface to a minimum concentration level at the epitaxial layer's upper surface.
    Type: Grant
    Filed: March 10, 2021
    Date of Patent: December 19, 2023
    Assignee: KLA Corporation
    Inventors: Abbas Haddadi, Sisir Yalamanchili, John Fielden, Yung-Ho Alex Chuang
  • Patent number: 11848398
    Abstract: A flat bonding method of light emitting devices including bonding light emitting devices on a circuit board using a reflow process, and re-bonding at least a portion of the light emitting devices bonded on the circuit board using a press plate while pressing the portion of the light emitting devices.
    Type: Grant
    Filed: December 24, 2020
    Date of Patent: December 19, 2023
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventor: Ik Kyu You
  • Patent number: 11843018
    Abstract: An imaging device includes a first photoelectric conversion region (170) receiving light within a first range of wavelengths, a second photoelectric conversion region (170) receiving light within a second range of wavelengths, and a third photoelectric conversion region (170) receiving light within a third range of wavelengths. At least a portion of a light-receiving surface of the first photoelectric conversion region has a first concave-convex structure (113), and a light-receiving surface of the second photoelectric conversion region has a different structure (111) than the first concave-convex structure.
    Type: Grant
    Filed: July 13, 2018
    Date of Patent: December 12, 2023
    Assignee: Sony Semiconductor Solutions Corporation
    Inventor: Sozo Yokogawa
  • Patent number: 11837618
    Abstract: An image sensor includes a semiconductor substrate having a plurality of pixel regions arranged in a first direction and a second direction that are parallel to an upper surface of the semiconductor substrate. The first direction is perpendicular to the second direction. A grid structure extends in the first direction and the second direction on the semiconductor substrate to define openings corresponding to a plurality of sub-pixel regions of the plurality of the pixel regions, respectively. Color filters are disposed in the openings of the grid structure, respectively. A protective layer covers sidewalls of the grid structure and bottom surfaces of the color filters. The protective layer includes silicon oxide including carbon (C) or nitrogen (N).
    Type: Grant
    Filed: August 21, 2020
    Date of Patent: December 5, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jaesung Hur, Taeksoo Jeon, Jongmin Baek, Sanghoon Ahn, Jangho Lee, Kyu-Hee Han
  • Patent number: 11825666
    Abstract: An imaging element according to an embodiment of the present disclosure includes: a first electrode including a plurality of electrodes; a second electrode opposed to the first electrode; a photoelectric conversion layer including an organic material provided between the first electrode and the second electrode; a first semiconductor layer provided between the first electrode and the photoelectric conversion layer, and including an n-type semiconductor material; and a second semiconductor layer provided between the second electrode and the photoelectric conversion layer, and including at least one of a carbon-containing compound having an electron affinity larger than a work function of the first electrode or an inorganic compound having a work function larger than the work function of the first electrode.
    Type: Grant
    Filed: July 30, 2019
    Date of Patent: November 21, 2023
    Assignees: Sony Corporation, Sony Semiconductor Solutions Corporation
    Inventors: Yosuke Saito, Masashi Bando, Yukio Kaneda, Yoshiyuki Hirano, Toshiki Moriwaki
  • Patent number: 11810893
    Abstract: An interposer sandwich structure includes a top interposer and a bottom interposer enclosing an integrated circuit electronic device that includes an attachment for attaching the device to the bottom interposer, and an interconnection structure connecting the top interposer to the bottom interposer. The top interposer may also be directly connected to a chip carrier in addition to the bottom interposer. The structure provides shielding and protection of the device against Electrostatic Discharge (ESD), Electromagnetic Interference (EMI), and Electromagnetic Conductivity (EMC) in miniaturized 3D packaging.
    Type: Grant
    Filed: May 31, 2021
    Date of Patent: November 7, 2023
    Assignee: International Business Machines Corporation
    Inventors: William Emmett Bernier, Bing Dang, John Knickerbocker, Son Kim Tran, Mario J. Interrante
  • Patent number: 11792542
    Abstract: An imaging device includes: an effective pixel region that includes a plurality of imaging elements-A, amplifies signal charges generated by photoelectric conversion, and reads the signal charges into a drive circuit; and an optical black region that includes a plurality of imaging elements-B, surrounds the effective pixel region, and outputs optical black that serves as the reference for black level. In the imaging device, the photoelectric conversion layer forming the plurality of imaging elements-A and the plurality of imaging elements-B is a common photoelectric conversion layer, the common photoelectric conversion layer is located on an outer side of the optical black region, and extends toward an outer edge region surrounding the optical black region, and an outer edge electrode is disposed in the outer edge region.
    Type: Grant
    Filed: August 31, 2022
    Date of Patent: October 17, 2023
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Tetsuro Takada, Taiichiro Watanabe
  • Patent number: 11778841
    Abstract: To provide a photoelectric conversion element that can improve image quality. Provided is a photoelectric conversion element (100) including at least a first electrode (101), a work function control layer (108), a photoelectric conversion layer (102), an oxide semiconductor layer (104), and a second electrode (107) in this order, and further including a third electrode (105), in which the third electrode (105) is provided apart from the second electrode (107) and is provided facing the photoelectric conversion layer (102) via an insulating layer (106), and the work function control layer (108) contains a larger amount of oxygen than an amount of oxygen satisfying a stoichiometric composition.
    Type: Grant
    Filed: July 30, 2019
    Date of Patent: October 3, 2023
    Assignees: SONY CORPORATION, SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Shintarou Hirata, Masahiro Joei, Kenichi Murata, Masashi Bando, Yosuke Saito, Ryosuke Suzuki
  • Patent number: 11776978
    Abstract: The present disclosure relates to a solid-state image pickup device and an electronic apparatus that are capable of preventing leakage of charges between adjacent pixels. A plurality of pixels perform photoelectric conversion on light incident from a back surface via different on-chip lenses for each pixel. A pixel separation wall is formed between pixels adjacent to each other, and includes a front-side trench formed from a front surface and a backside trench formed from the back surface. A wiring layer is provided on the front surface. The present disclosure is applicable to, for example, a backside illuminated CMOS image sensor.
    Type: Grant
    Filed: July 13, 2022
    Date of Patent: October 3, 2023
    Assignee: Sony Group Corporation
    Inventors: Atsushi Masagaki, Yusuke Tanaka
  • Patent number: 11776985
    Abstract: A method of fabricating self-aligned grids in a BSI image sensor is provided. The method includes depositing a first dielectric layer over a back surface of a substrate that has a plurality of photodiodes formed therein, forming a grid of trenches, and filling in the trenches with dielectric material to create a trench isolation grid. Here, a trench passes through the first dielectric layer and extends into the substrate. The method further includes etching back dielectric material in the trenches to a level that is below an upper surface of the first dielectric layer to form recesses overlaying the trench isolation grid, and filling in the recesses with metallic material to create a metallic grid that is aligned with the trench isolation grid.
    Type: Grant
    Filed: May 6, 2021
    Date of Patent: October 3, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tsun-Kai Tsao, Jiech-Fun Lu, Shih-Pei Chou, Wei Chuang Wu
  • Patent number: 11764239
    Abstract: A method for forming an image sensor package is provided. An image sensor chip is formed over a package substrate. A protection layer is formed overlying the image sensor chip. The protection layer has a planar top surface and a bottom surface lining and contacting structures under the protection layer. An opening is formed into the protection layer and spaced around a periphery of the image sensor chip. A light shielding material is filled in the opening to form an on-wafer shield structure having a sidewall directly contact the protection layer.
    Type: Grant
    Filed: February 10, 2022
    Date of Patent: September 19, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wen-Hau Wu, Chun-Hao Chuang, Kazuaki Hashimoto, Keng-Yu Chou, Wei-Chieh Chiang, Cheng Yu Huang
  • Patent number: 11765485
    Abstract: A photoelectric conversion apparatus includes a driving unit and a plurality of pixels. The pixel includes a first photoelectric conversion unit, a second photoelectric conversion unit, a charge-voltage conversion unit, a first transfer transistor, a second transfer transistor, a reset transistor, a microlens configured to condense incident light to the first photoelectric conversion unit and the second photoelectric conversion unit, and an output unit. The driving unit performs a first operation including a first reset operation and a first readout operation, and a second operation including a second reset operation and a second readout operation.
    Type: Grant
    Filed: July 29, 2022
    Date of Patent: September 19, 2023
    Assignee: Canon Kabushiki Kaisha
    Inventor: Kazuki Ohshitanai
  • Patent number: 11764878
    Abstract: Multi-chip modules in different semiconductor packages may be optically data coupled by way of LEDs and photodetectors linked by a multicore fiber. The multicore fiber may pass through apertures in the semiconductor packages, with an array of LEDs and photodetectors in the semiconductor package providing and receiving, respectively, optical signals comprised of data passed between the multi-chip modules.
    Type: Grant
    Filed: March 7, 2022
    Date of Patent: September 19, 2023
    Assignee: AVICENATECH CORP.
    Inventors: Bardia Pezeshki, Robert Kalman, Alexander Tselikov, Cameron Danesh
  • Patent number: 11754783
    Abstract: Described herein are photonic communication platforms that can overcome the memory bottleneck problem, thereby enabling scaling of memory capacity and bandwidth well beyond what is possible with conventional computing systems. Some embodiments provide photonic communication platforms that involve use of photonic modules. Each photonic module includes programmable photonic circuits for placing the module in optical communication with other modules based on the needs of a particular application. The architecture developed by the inventors relies on the use of common photomask sets (or at least one common photomask) to fabricate multiple photonic modules in a single wafer. Photonic modules in multiple wafers can be linked together into a communication platform using optical or electronic means.
    Type: Grant
    Filed: May 6, 2021
    Date of Patent: September 12, 2023
    Assignee: Lightmatter, Inc.
    Inventors: Nicholas C. Harris, Carl Ramey, Michael Gould, Thomas Graham, Darius Bunandar, Ryan Braid, Mykhailo Tymchenko
  • Patent number: 11749703
    Abstract: To solve at least one of various problems in an image sensor in a 2PD scheme. A solid-state image pickup element includes a plurality of pixels each including a photoelectric conversion element formed on a silicon substrate, in which some pixels in the plurality of pixels each have the photoelectric conversion element partitioned by a first-type separating region extending in a plate shape in a direction along a thickness direction of the silicon substrate, and other pixels in the plurality of pixels each have the photoelectric conversion element partitioned by a second-type separating region formed with a material different from a material of the first-type separating region, the second-type separating region extending in a plate shape in the direction along the thickness direction of the silicon substrate.
    Type: Grant
    Filed: June 15, 2021
    Date of Patent: September 5, 2023
    Assignee: SONY GROUP CORPORATION
    Inventor: Shinichiro Noudo
  • Patent number: 11743611
    Abstract: Provided is an image sensor including a first pixel including a first floating diffusion region and a second floating diffusion region, a second pixel including a first floating diffusion region, a second floating diffusion region, and a third floating diffusion region, a third pixel including a first floating diffusion region and a second floating diffusion region, and a fourth pixel including a first floating diffusion region, a second floating diffusion region, and a third floating diffusion region, wherein the second floating diffusion region of the first pixel and the second floating diffusion region of the second pixel are connected through a first metal line, and wherein the third floating diffusion region of the second pixel and the third floating diffusion region of the third pixel are connected through a second metal.
    Type: Grant
    Filed: July 8, 2022
    Date of Patent: August 29, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jungbin Yun, Hwanwoong Kim, Eunsub Shim, Kyungho Lee, Hongsuk Lee
  • Patent number: 11736829
    Abstract: The pixel region includes a first phase difference pixel group including a plurality of the phase difference pixels of which the first side of the photoelectric conversion element is blocked by the light blocking layer in a first side region of the first side, and a second phase difference pixel group including a plurality of the phase difference pixels of which the second side of the photoelectric conversion element is blocked by the light blocking layer. The first phase difference pixel group includes a first A pixel and a first B pixel in which a light blocking area of the photoelectric conversion element using the light blocking layer is smaller than that of the first A pixel. The controller performs addition readout processing in which at least one of a pixel signal of the first A pixel or a pixel signal of the first B pixel is weighted in accordance with optical characteristics of the imaging lens.
    Type: Grant
    Filed: August 22, 2022
    Date of Patent: August 22, 2023
    Assignee: FUJIFILM Corporation
    Inventors: Koichi Tanaka, Tomoyuki Kawai, Junya Kitagawa, Yuya Nishio
  • Patent number: 11726184
    Abstract: The present disclosure relates to various embodiments of an optical component for a LIDAR Sensor System. The optical component may include an optical element having a first main surface and a second main surface opposite to the first main surface, a first lens array formed on the first main surface, and/or a second lens array formed on the second main surface. The optical element has a curved shape in a first direction of the LIDAR Sensor System.
    Type: Grant
    Filed: March 5, 2020
    Date of Patent: August 15, 2023
    Assignee: LeddarTech Inc.
    Inventors: Ricardo Ferreira, Stefan Hadrath, Peter Hoehmann, Herbert Kaestle, Florian Kolb, Norbert Magg, Jiye Park, Tobias Schmidt, Martin Schnarrenberger, Norbert Haas, Helmut Horn, Bernhard Siessegger, Guido Angenendt, Charles Braquet, Gerhard Maierbacher, Oliver Neitzke, Sergey Khrushchev
  • Patent number: 11727790
    Abstract: A system providing various improved calibration techniques for haptic feedback is described. An acoustic field is defined by one or more control points in a space within which the acoustic field may exist. Each control point is assigned an amplitude value equating to a desired amplitude of the acoustic field at the control point. Because complete control of space is not possible, controlling the acoustic field at given points yields erroneous local maxima in the acoustic field levels at other related positions. In relation to mid-air haptic feedback, these can interfere in interactions with the space by creating secondary effects and ghost phenomena that can be felt outside the interaction area. The level and nature of the secondary maxima in the acoustic field is determined by how the space is controlled. By arranging the transducer elements in different ways, unwanted effects on the acoustic field can be limited and controlled.
    Type: Grant
    Filed: October 27, 2020
    Date of Patent: August 15, 2023
    Assignee: ULTRAHAPTICS IP LTD
    Inventors: Thomas Andrew Carter, Benjamin John Oliver Long, Robert Charles Blenkinsopp
  • Patent number: 11716555
    Abstract: A solid-state image sensor includes a semiconductor substrate having a photoelectric conversion element converting incident light into a charge and a charge retaining section temporarily retaining the charge photoelectrically converted by the photoelectric conversion element and a light shielding section having an embedded section extending in at least a region between the photoelectric conversion element and the charge retaining section of the semiconductor substrate.
    Type: Grant
    Filed: January 29, 2021
    Date of Patent: August 1, 2023
    Assignee: SONY CORPORATION
    Inventors: Tomohiro Ohkubo, Suzunori Endo
  • Patent number: 11710760
    Abstract: One embodiment of the present invention is a display device including a first insulating layer, a second insulating layer, a first transistor, a second transistor, a first light-emitting diode, a second light-emitting diode, and a color conversion layer. The first insulating layer is over the first transistor and the second transistor. The first light-emitting diode and the second light-emitting diode are over the first insulating layer. The color conversion layer is over the second light-emitting diode. The color conversion layer is configured to convert light emitted from the second light-emitting diode into a light having a longer wavelength. The first transistor and the second transistor each include a metal oxide layer and a gate electrode. The metal oxide layer includes a channel formation region. A top surface of the gate electrode is level or substantially level with a top surface of the second insulating layer.
    Type: Grant
    Filed: June 9, 2020
    Date of Patent: July 25, 2023
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Koji Kusunoki, Shingo Eguchi, Takayuki Ikeda
  • Patent number: 11703382
    Abstract: Provided are a display assembly, a method for manufacturing a display assembly and an electronic device. The display assembly includes: a pixel array including a plurality of pixel units; a photosensitive array including a plurality of photosensitive units, at least one of the photosensitive unit is disposed in a gap between two adjacent pixel units of the pixel array for detecting ambient light through the pixel array.
    Type: Grant
    Filed: February 8, 2021
    Date of Patent: July 18, 2023
    Assignee: Beijing Xiaomi Mobile Software Co., Ltd.
    Inventor: Chaoxi Chen
  • Patent number: 11705474
    Abstract: The problem of reducing noise in image sensing devices, especially NIR detectors, is solved by providing ground connections for the reflectors. The reflectors may be grounded through vias that couple the reflectors to grounded areas of the substrate. The grounded areas of the substrate may be P+ doped areas formed proximate the surface of the substrate. In particular, the P+ doped areas may be parts of photodiodes. Alternatively, the reflectors may be grounded through a metal interconnect structure formed over the front side of the substrate.
    Type: Grant
    Filed: June 17, 2021
    Date of Patent: July 18, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yen-Ting Chiang, Ching-Chun Wang, Dun-Nian Yaung, Jen-Cheng Liu, Jhy-Jyi Sze, Shyh-Fann Ting, Yimin Huang
  • Patent number: 11693149
    Abstract: A method for forming a molded proximity sensor with an optical resin lens and the structure formed thereby. A light sensor chip is placed on a substrate, such as a printed circuit board, and a diode, such as a laser diode, is positioned on top of the light sensor chip and electrically connected to a bonding pad on the light sensor chip. Transparent, optical resin in liquid form is applied as a drop over the light sensor array on the light sensor chip as well as over the light-emitting diode. After the optical resin is cured, a molding compound is applied to an entire assembly, after which the assembly is polished to expose the lenses and have a top surface flush with the top surface of the molding compound.
    Type: Grant
    Filed: August 25, 2021
    Date of Patent: July 4, 2023
    Assignees: STMICROELECTRONICS (RESEARCH & DEVELOPMENT) LIMITED, STMICROELECTRONICS PTE LTD
    Inventors: Wing Shenq Wong, Andy Price, Eric Christison
  • Patent number: 11696041
    Abstract: An image sensor includes a two-dimensional pixel array and a lens array. The two-dimensional pixel array comprises a plurality of pixels. Some of the pixels includes two sub-pixels. A rectangular coordinate is established by taking the pixel as an origin, a length direction of the two-dimensional pixel array as an x-axis, and a width direction of the two-dimensional pixel array as a y-axis. The two sub-pixels lie in both a positive half axis and a negative half axis of the x-axis and lies in both a positive half axis and a negative half axis of the y-axis. The lens array comprises a plurality of lenses, each covering one of the pixels.
    Type: Grant
    Filed: May 18, 2022
    Date of Patent: July 4, 2023
    Assignee: GUANGDONG OPPO MOBILE TELECOMMUNICATIONS CORP., LTD.
    Inventors: Rui Xu, Cheng Tang, Xin Yang, Xiaotao Li, Wentao Wang, Jianbo Sun, He Lan, Haiyu Zhang, Gong Zhang
  • Patent number: 11695093
    Abstract: A device emitting mid-infrared light that comprises a semiconductor substrate of GaSb or closely related material. The device can also comprise epitaxial heterostructures of InAs, GaAs, AlSb, and related alloys forming light emitting structures cascaded by tunnel junctions. Further, the device can comprise light emission from the front, epitaxial side of the substrate.
    Type: Grant
    Filed: November 11, 2019
    Date of Patent: July 4, 2023
    Assignee: Analog Devices, Inc.
    Inventors: Shrenik Deliwala, Ryan Michael Iutzi
  • Patent number: 11693164
    Abstract: An optical filter may include an interference filter that passes at least two channels associated with at least two transmission peaks; and a plurality of blockers, wherein each blocker, of the plurality of blockers, passes a respective channel associated with a respective transmission peak of the at least two transmission peaks and blocks one or more channels other than the respective channel associated with the respective transmission peak.
    Type: Grant
    Filed: October 7, 2020
    Date of Patent: July 4, 2023
    Assignee: VIAVI Solutions Inc.
    Inventor: William D. Houck
  • Patent number: 11682688
    Abstract: A photoelectric converting device including: a semiconductor layer with a front surface and a back surface, the semiconductor layer including a photoelectric conversion portion; a wire structure including an insulating film, the wire structure being disposed on the front surface of the semiconductor layer; a first insulator portion disposed in a trench provided in the semiconductor layer; and a second insulator portion disposed between the first insulator portion and the insulating film, wherein the first insulator portion has a maximum width larger than a maximum width of the second insulator portion.
    Type: Grant
    Filed: October 22, 2019
    Date of Patent: June 20, 2023
    Assignee: Canon Kabushiki Kaisha
    Inventors: Keita Torii, Hideki Ina
  • Patent number: 11676989
    Abstract: Provided is a display device including a display layer which includes an active area and a peripheral area adjacent to the active area, a biometric information sensing layer disposed below the display layer and including a sensor, and an optical pattern layer disposed on an optical pattern plane between the biometric information sensing layer and the display layer and including a light blocking part and a transmission part having higher light transmittance than the light blocking part, wherein an upper surface of the light blocking part is concave, and recessed away from the optical pattern plane.
    Type: Grant
    Filed: July 2, 2021
    Date of Patent: June 13, 2023
    Assignee: Samsung Display Co., Ltd.
    Inventors: Byung Han Yoo, Hongsick Park, Kijune Lee, Seokhyun Lim, Hyunmin Cho, Dae-Young Lee
  • Patent number: 11670604
    Abstract: A semiconductor arrangement is provided. The semiconductor arrangement includes a first portion and a vertically conductive structure. The first portion includes a first dielectric layer and a first guard ring in the first dielectric layer. The first guard ring includes, in the first dielectric layer, a first metal layer coupled to a first via. The first portion includes a vertical conductive structure passing through the first dielectric layer and proximate by the first guard ring.
    Type: Grant
    Filed: August 16, 2021
    Date of Patent: June 6, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventor: Chien-Hsuan Liu