Abstract: An image sensing device is provided to include: a substrate including photoelectric conversion elements, each configured to generate photocharge corresponding to the intensity of incident light; a plurality of optical filters disposed over the substrate and configured to selectively transmit the incident light to the plurality of photoelectric conversion elements; and an optical grid structure disposed between the optical filters adjacent to each other. The optical grid structure comprises a capping layer disposed along a boundary of the optical grid structure and structured to define a space with an open area to expose the space to an outside of the optical grid structure so that the space is filled with air as an air layer, wherein a first width of a top side of the air layer is smaller than a second width of a bottom side thereof.

Abstract: A semiconductor device includes a first type of light sensing units, where each instance of the first type of light sensing units is operable to receive a first amount of radiation; and a second type of light sensing units, where each instance of the second type of light sensing units is operable to receive a second amount of radiation, and the second type of light sensing units is arranged in an array with the first type of light sensing units to form a pixel sensor. The first amount of radiation is smaller than the second amount of radiation, and at least a first instance of the first type of light sensing units is adjacent to a second instance first type of light sensing unit.

Abstract: An optical connector includes a fiber positioning assembly and a frame having two walls for supporting the fiber positioning assembly in a controlled vertical alignment relative to the frame. The fiber positioning assembly includes an optical fiber array disposed at a top surface of a support block for positioning between the walls, and a cap covering top portions of the optical fibers projecting from the block. The cap has a flat alignment surface resting upon the fiber top portions and extending laterally beyond the support block such that when the block is disposed between the walls, free portions of the alignment surface rest upon the walls to control the vertical alignment of the array. A single rail affixed to a bottom shelf of the frame, and a correspondingly dimensioned rectangular notch at the bottom of the support block, control the horizontal alignment of the array.

Abstract: Provided is a solid-state imaging element including a support 1 having a photoelectric conversion unit 10 and an optical filter 20 provided on a light incident side with respect to the photoelectric conversion unit 10. The optical filter 20 has two or more kinds of pixels 21, 22, and 23 arranged in a patterned manner and a partition wall 25 disposed between the pixels. A refractive index of the partition wall with respect to light having a wavelength of 533 nm is 1.10 to 1.30, a width W1 of the partition wall is 80 to 150 nm, a refractive index of the pixels with respect to light having a wavelength of 1000 nm is 1.60 to 1.90, a difference between a thickness H1 of the partition wall and a thickness H2 of pixels adjacent to the partition wall is 200 nm or less, and a difference between the refractive index of the partition wall with respect to light having a wavelength of 533 nm and a refractive index of the pixels adjacent to the partition wall with respect to light having a wavelength of 1000 nm is 0.

Abstract: According to an aspect, a detection device includes a plurality of optical sensors arranged on a substrate. Each of the optical sensors includes a first photodiode and a second photodiode that is coupled in series and in an opposite direction to the first photodiode.

Abstract: A filter array includes optical filters that are disposed in a two-dimensional plane. At least one optical filter of the optical filters includes an interference layer having a first surface and a second surface opposite the first surface, and a reflective layer provided on the first surface. A transmission spectrum of the at least one optical filter has maximum values. The reflective layer is not provided on the second surface.

Abstract: A solid-state image sensor including a photoelectric conversion region partitioned by trenches, a first semiconductor region surrounding the photoelectric conversion region, a first contact in contact with the first semiconductor region at a bottom portion of the trench, a first electrode in contact with the first contact in the first trench, a second semiconductor region in contact with the first semiconductor region having the same conductive type as the first semiconductor region, a third semiconductor region in contact with the second semiconductor region, between the second semiconductor region and a first surface, and having a second conductive type, a second contact on the first surface in contact with the third semiconductor region, and a second electrode in contact with the second contact, and a second surface at which the first contact and the first electrode are in contact with each other is inclined with respect to the first surface.

Abstract: An image sensing device may include one or more pixel groups arranged in rows and columns in an array, each pixel group being arranged at an intersection between a row and a column of the array, wherein each pixel group comprises one or more floating diffusion regions, and one or more groups of an odd number photoelectric conversion units structured to convert incident light to generate electrical charge, each group of the odd number of photoelectric conversion units electrically connected in common to one of the floating diffusion regions for receiving the generated electrical charge.

Abstract: Structures for a single-photon avalanche diode and methods of forming a structure for a single-photon avalanche diode. The structure includes a semiconductor layer having a first well and a second well defining a p-n junction with the first well, and an interlayer dielectric layer on the semiconductor layer. A deep trench isolation region includes a conductor layer and a dielectric liner. The conductor layer penetrates through the semiconductor layer and the interlayer dielectric layer. The conductor layer has a first end, a second end, and a sidewall that connects the first end to the second end. The dielectric liner is arranged to surround the sidewall of the conductor layer. A metal feature is connected to the first end of the conductor layer.

Abstract: A photodetecting device includes a substrate, an array of sub-pixels, and a lens array covering the array of sub-pixels. Each sub-pixel includes a photosensitive layer supported by the substrate, the photosensitive layer being configured to absorb photons and generate photo-carriers, a first doped portion formed in the photosensitive layer of the respective sub-pixel, wherein the first doped portion includes dopants with a first conductivity type; and a second doped portion formed in the substrate, wherein the second doped portion includes dopants with a second conductivity type different from the first conductivity type. The array further includes an isolation region separating two or more sub-pixels of the array, a routing layer formed on the substrate configured to electrically couple a circuit to multiple sub-pixels of the array. The lens array includes a spacer portion and a plurality of lenses arranged in a one-to-one correspondence with each of the sub-pixels.

Abstract: A photoelectric conversion device includes a photoelectric conversion area in which photoelectric conversion elements each including a first electrode, a second electrode, and a photoelectric conversion layer, provided between the first electrode and the second electrode, that contains a semiconductor material are provided in a matrix and a guard ring surrounding a periphery of the photoelectric conversion area in a form of a frame. The guard ring has an intermediate layer containing the same semiconductor material as the photoelectric conversion layer.

Abstract: An image sensor includes a sensor substrate including first, second, third, and fourth pixels, and a color separating lens array, wherein each of the first pixels includes a first focusing signal region and a second focusing signal region that independently generate focusing signals, and the first focusing signal region and the second focusing signal region are arranged to be adjacent to each other in the first pixel in a first direction, and each of the fourth pixels includes a third focusing signal region and a fourth focusing signal region that independently generate focusing signals, and the third focusing signal region and the fourth focusing signal region are arranged to be adjacent to each other in the fourth pixel in a second direction that is different from the first direction.

Abstract: To provide a photoelectric conversion element that can improve image quality. Provided is a photoelectric conversion element including at least a first electrode, a work function control layer, a photoelectric conversion layer, an oxide semiconductor layer, and a second electrode in this order, and further including a third electrode, in which the third electrode is provided apart from the second electrode and is provided facing the photoelectric conversion layer via an insulating layer, and the work function control layer contains a larger amount of oxygen than an amount of oxygen satisfying a stoichiometric composition.

Abstract: The present technology relates to a solid-state imaging device, a manufacturing method, and an electronic device, which can improve sensitivity while improving color mixing. The solid-state imaging device includes a first wall provided between a pixel and a pixel arranged two-dimensionally to isolate the pixels, in which the first wall includes at least two layers including a light shielding film of a lowermost layer and a low refractive index film of which refractive index is lower than the light shielding film. The present technology can be applied to, for example, a solid-state imaging device, an electronic device having an imaging function, and the like.

Abstract: Provided is an imaging apparatus that includes a plurality of pixels each including a photoelectric conversion element, and disposed in matrix on a light-receiving surface, a plurality of light-receiving lenses provided one by one for each of the plurality of pixels in the plurality of pixels, and a control section that controls exposure times of the plurality of pixels. The control section controls the exposure times of the plurality of pixels to allow exposure times of at least two of the pixels, of the plurality of pixels corresponding to each of the light-receiving lenses, to be the same, and exposure times of at least two of the pixels, of the plurality of pixels corresponding to each of the light-receiving lenses, to be different from each other.

Abstract: A display device includes a substrate, a photosensitive element formed above the substrate, a signal line formed above the substrate, and a transparent conductive member electrically connected to the signal line and the photosensitive element. In a normal direction of the substrate, the signal line does not overlap with the photosensitive element.

Abstract: The present invention disclosures an image sensor structure and a formation method thereof, wherein comprising: a pixel unit array, a peripheral circuit set at the periphery of the pixel unit array, and a composite shield structure around the pixel unit array and between the pixel unit array and the peripheral circuit, the composite shield structure comprises a light shield structure and a heat shield structure; wherein, the light shield structure comprises a metal isolation structure around the pixel unit array for isolating light emitted by the peripheral circuit, and the heat shield structure comprises a cavity set inside the metal isolation structure, the cavity is filled with a thermal isolation medium for preventing heat transfer to the pixel unit array. The present invention can avoid image quality deterioration and distortion caused by light and heat of the peripheral circuit of the image sensor.

Abstract: To provide an imaging device that allows miniaturization to be achieved in an in-plane direction without impairing operation performance. This imaging device includes a first pixel and a second pixel. The first pixel includes m (m represents an integer greater than or equal to 2) first wiring lines and m first gate electrodes that are coupled to the m respective first wiring lines. The second pixel includes n (n represents a natural number smaller than m) second wiring lines and n second gate electrodes that are coupled to the n respective second wiring lines.

Abstract: A photodetector, a preparation method for a photodetector, a photodetector array and a photodetection terminal. The photodetector comprises a substrate (11) and an optical resonant cavity (10) formed on the substrate (11).

Abstract: An optical component includes: a lens that includes a lens surface and a tapered side surface, the tapered side surface extending from an outer circumference of the lens surface in an axial direction that intersects the lens surface and having an outer diameter progressively larger away from the lens surface. A center of the outer circumference of the lens surface is displaced, in a direction intersecting the axial direction, from a center of an outer circumference of the side surface at a position distanced from the lens surface in the axial direction. The optical component may further include a frame body in which the lens is fitted. The frame body may include a tapered engaging surface corresponding to the side surface of the lens. The lens may be fitted in the frame body and is positioned in a circumferential direction about the axial direction.

Abstract: A device and methods, the device comprising: a photo detector comprising a waveguide; two metal layers connected to the photo detector; a measurement device connected between the two metal layers, for measuring an electric parameter between the two metal layers, said electric parameter indicative of an amount of light propagating through the waveguide; and a voltage source connected between the two metal layers, wherein applying voltage between the two metal layers changes a refraction index of the waveguide, thereby affecting a phase of light propagating through the waveguide, and wherein the voltage to be applied is determined in accordance with the resistance measured by the resistance measurement device.

Abstract: There is provided a resonator structure that obtains a highly accurate optical spectrum. The resonator structure includes a stacked structure that includes a semiconductor layer, a first resonator, a first reflection layer, a second resonator, a second reflection layer stacked in this order, allows light of a specific wavelength band to be transmitted therethrough, the semiconductor layer having a first average refractive index, the first resonator having a second average refractive index lower than the first average refractive index, and the first reflection layer having a third average refractive index higher than the second average refractive index.

Abstract: Disclosed are a co-packaged integrated optoelectronic module and a co-packaged optoelectronic switch chip. The co-packaged integrated optoelectronic module includes a carrier board, and an optoelectronic submodule, a slave microprocessor and a master microprocessor disposed on and electrically connected to the carrier board. In the optoelectronic submodule, a digital signal processing chip converts an electrical analog signal into an electrical digital signal, an optoelectronic signal analog conversion chip converts an optical analog signal into the electrical analog signal to the digital signal processing chip, and an optical transceiver chip receives and transmits the optical analog signal to the optoelectronic signal analog conversion chip. The slave microprocessor monitors operation of the optoelectronic submodule.

Abstract: A display device and a method of fabricating the same are provided. The display device includes a substrate, a first electrode on the substrate, a second electrode on the substrate and spaced apart from the first electrode, a plurality of light emitting elements, at least a portion of each of which is between the first electrode and the second electrode, and contact electrodes on the first electrode, the second electrode and the light emitting elements, the contact electrodes including a conductive polymer, wherein the contact electrodes include a first contact electrode which contacts an end portion of a first portion of the light emitting elements and the first electrode and a second contact electrode which contacts an end portion of a second portion of the light emitting elements, and the second electrode and is spaced apart from the first contact electrode.

Abstract: A distance measuring device according to the present disclosure includes: a light-receiving section including a first light-receiving pixel and a second light-receiving pixel that are configured to detect light, and a light-shielded pixel that is light-shielded, the first light-receiving pixel, the light-shielded pixel, and the second light-receiving pixel being disposed in a first direction in this order; and a processor that is configured to measure a distance to a measurement object on the basis of a detection result in the first light-receiving pixel and a detection result in the second light-receiving pixel.

Abstract: The present technology relates to a light-receiving element and a distance-measuring module for enabling improvement of characteristics. A light-receiving element includes an on-chip lens, a wiring layer, and a semiconductor layer arranged between the on-chip lens and the wiring layer, the semiconductor layer includes a first voltage application portion to which a first voltage is applied, a second voltage application portion to which a second voltage different from the first voltage is applied, a first charge detection portion arranged near the first voltage application portion, and a second charge detection portion arranged near the second voltage application portion, and each of the first voltage application portion and the second voltage application portion is covered with an insulating film in the semiconductor layer. The present technology can be applied to, for example, a light-receiving element that generates distance information by a ToF method.

Abstract: Described herein are photonic communication platforms that can overcome the memory bottleneck problem, thereby enabling scaling of memory capacity and bandwidth well beyond what is possible with conventional computing systems. Some embodiments provide photonic communication platforms that involve use of photonic modules. Each photonic module includes programmable photonic circuits for placing the module in optical communication with other modules based on the needs of a particular application. The architecture developed by the inventors relies on the use of common photomask sets (or at least one common photomask) to fabricate multiple photonic modules in a single wafer. Photonic modules in multiple wafers can be linked together into a communication platform using optical or electronic means.

Abstract: The present disclosure relates to a solid state imaging device capable of further decreasing a chip size, a solid state imaging device manufacturing method, and an electronic apparatus. A solid state imaging device includes: a semiconductor substrate with a pixel region on which a plurality of pixels is arranged in a planar manner; a wiring layer that is laminated on the semiconductor substrate and is provided with wiring connected to the plurality of pixels; and a support substrate that is bonded to the wiring layer. A plurality of electrode pads used to be electrically connected to an outside is arranged at positions overlapping the pixel region in the wiring layer, and through-holes are provided at positions corresponding to the plurality of electrode pads in the support substrate. The present technology can be applied to, for example, a back side irradiation type CMOS image sensor of a wafer level CSP.

Abstract: A system providing various improved calibration techniques for haptic feedback is described. An acoustic field is defined by one or more control points in a space within which the acoustic field may exist. Each control point is assigned an amplitude value equating to a desired amplitude of the acoustic field at the control point. Because complete control of space is not possible, controlling the acoustic field at given points yields erroneous local maxima in the acoustic field levels at other related positions. In relation to mid-air haptic feedback, these can interfere in interactions with the space by creating secondary effects and ghost phenomena that can be felt outside the interaction area. The level and nature of the secondary maxima in the acoustic field is determined by how the space is controlled. By arranging the transducer elements in different ways, unwanted effects on the acoustic field can be limited and controlled.

Abstract: A method of manufacturing a substrate for a front-facing image sensor, comprises:—providing a donor substrate comprising a semiconductor layer to be transferred,—providing a semiconductor carrier substrate,—bonding the donor substrate to the carrier substrate, an electrically insulating layer being at the bonding interface,—transferring the semiconductor layer to the carrier substrate,—implanting gaseous ions in the carrier substrate via the transferred semiconductor layer and the electrically insulating layer, and—after the implantation, epitaxially growing an additional semiconductor layer on the transferred semiconductor layer.

Abstract: Multi-chip modules in different semiconductor packages may be optically data coupled by way of LEDs and photodetectors linked by a multicore fiber. The multicore fiber may pass through apertures in the semiconductor packages, with an array of LEDs and photodetectors in the semiconductor package providing and receiving, respectively, optical signals comprised of data passed between the multi-chip modules.

Abstract: Microstructure enhanced photodector arrangements uses a CMOS image sensor (CIS) wafer of crystalline Si and a CMOS Logic Processor (CLP) wafer stacked on each other for electrical interaction. The wafers can be fabricated separately and stacked or can be regions of the same monolithic chip. The image can be a time-of-flight image. Bayer arrays are enhanced with microstructure holes. Avalanche photodiodes, single photon avalanche photodiodes and phototransistors can be laterally and/or vertically doped. Photodetectors/photosensors can have slanted sidewalls for improved optical confinement and reduced crosstalk.

Abstract: Described herein are photonic communication platforms that can overcome the memory bottleneck problem, thereby enabling scaling of memory capacity and bandwidth well beyond what is possible with conventional computing systems. Some embodiments provide photonic communication platforms that involve use of photonic modules. Each photonic module includes programmable photonic circuits for placing the module in optical communication with other modules based on the needs of a particular application. The architecture developed by the inventors relies on the use of common photomask sets (or at least one common photomask) to fabricate multiple photonic modules in a single wafer. Photonic modules in multiple wafers can be linked together into a communication platform using optical or electronic means.

Abstract: Various optical detector pixel embodiments are described. One optical detector pixel includes a photodiode having a first end opposite a second end, a set of lateral walls joining the first end and the second end, and a depth parallel to the set of lateral walls. A lens is positioned to direct light toward the first end of the photodiode. A set of one or more optical scattering structures laterally extends at least partially into an illumination area defined by the lens and has a set of sidewalls extending away from the first end. The set of sidewalls includes a pair of sidewalls forming an included angle. The included angle extends perpendicular to the depth of the photodiode. The pair of sidewalls abut a portion of the photodiode.

Abstract: The present technology relates to a solid-state imaging device, an imaging apparatus, and an electronic apparatus, which can suppress a color mixture without lowering the sensitivity. In pixels (red pixels (R pixels), green pixels (G pixels), and blue pixels (B pixels)) other than W pixels and adjacent to the W pixels, light shielding films thicker than those of the W pixels are formed at positions adjacent to the W pixels. Furthermore, the shorter the wavelength, the thicker the light shielding film in the RGB pixels other than the W pixels. The present technology is applicable to the solid-state imaging device.

Abstract: To reduce reflection of incident light in an imaging element having a transparent resin arranged on a surface of a microlens. The imaging element includes a pixel, a microlens, a transparent resin layer, and a sealing glass. The pixel is formed on a semiconductor substrate and generates an image signal according to radiated light. The microlens is arranged adjacent to the pixel, collects incident light, irradiates the pixel with the incident light, and flattens a surface of the pixel. The transparent resin layer is arranged adjacent to the microlens and has a refractive index different from a refractive index of the microlens by a predetermined difference. The sealing glass is arranged adjacent to the transparent resin and seals the semiconductor substrate.

Abstract: A photosensitive assembly includes a circuit board. The circuit board has a first surface, a second surface opposite to the first surface, and a first through hole extending through the first surface and the second surface. A photosensitive chip is disposed on the second surface. The photosensitive chip has a photosensitive area and a non-photosensitive area connected to the photosensitive area, the non-photosensitive area is electrically connected to one side of the second surface, and the photosensitive area is exposed from the first through hole. A reinforcing plate is disposed on the first surface. A thermal conductive layer is disposed on the photosensitive chip, and the thermal conductive layer includes a silica gel or a metal.

Abstract: An organic light-emitting display device includes a substrate having a display region and a peripheral region, a plurality of pixels on the substrate in the display region, a first wiring and a second wiring on the substrate in the peripheral region, An insulation layer on the first and second wirings, the insulation layer covering a top surface and a sidewall of each of the first and second wirings, and an encapsulation layer on the plurality of pixels and on the insulation layer.

Abstract: An optical module for endoscope includes a light emitting element, an optical fiber, a ferrule to which the light emitting element is bonded, a wiring board to which the ferrule is bonded, and a resin disposed between the ferrule and the wiring board, wherein the ferrule has a first principal surface made of a transparent material, a second principal surface, and a side surface, the second principal surface has an opening of an insertion hole, the second principal surface has an opening of a groove communicating with the insertion hole, the side surface has an opening of the groove, and a first distance between the opening of the groove on the side surface and the first principal surface is greater than a second distance between the bottom surface of the insertion hole and the first principal surface.

Abstract: Described herein are photonic communication platforms that can overcome the memory bottleneck problem, thereby enabling scaling of memory capacity and bandwidth well beyond what is possible with conventional computing systems. Some embodiments provide photonic communication platforms that involve use of photonic modules. Each photonic module includes programmable photonic circuits for placing the module in optical communication with other modules based on the needs of a particular application. The architecture developed by the inventors relies on the use of common photomask sets (or at least one common photomask) to fabricate multiple photonic modules in a single wafer. Photonic modules in multiple wafers can be linked together into a communication platform using optical or electronic means.

Abstract: A semiconductor apparatus including a layered structure is disclosed. In one example, a first substrate with a light-emitting element and a second substrate with a light-blocking member on a periphery are layered with each other. The layered structure includes a first resin including a photocurable resin that seals a part between the first substrate and the second substrate in a pixel region. A second resin seals a part between the first substrate and the second substrate in a light-blocking region at a periphery. A protrusion structure is arranged between the first substrate and the second substrate in a boundary region between the pixel region and the light-blocking region, and includes a transparent or semitransparent material that transmits light.

Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To mitigate crosstalk, isolation structures may be formed around each SPAD. The isolation structures may include front side deep trench isolation structures that extend partially or fully through a semiconductor substrate for the SPADs. The isolation structures may include a metal filler such as tungsten that absorbs photons. The isolation structures may include a p-type doped semiconductor liner to mitigate dark current. The isolation structures may include a buffer layer such as silicon dioxide that is interposed between the metal filler and the p-type doped semiconductor liner. The isolation structures may have a tapered portion or may be formed in two steps such that the isolation structures have different portions with different properties. An additional filler such as polysilicon or borophosphosilicate glass may be included in some of the isolation structures in addition to the metal filler.

Abstract: A photodetector comprises a substrate, and supported by the substrate, a configuration to act as optical resonator and to absorb incident radiation of a band, including infrared. The configuration comprises: a resonant frontside structure facing the incident radiation; a backside structure and arranged between the frontside structure and the substrate; and a layer of an active material made from a semiconducting material, and configured to convert at least part of the incident radiation of the band into charge carriers. The frontside structure or the backside structure is made from electrically conducting material and is in contact with the active material. The configuration is configured to selectively absorb the incident radiation of the band. The frontside structure or the backside structure that is in contact with the active material is contacted by electrical contacts for sensing the charge carriers in the active material. The active material comprises amorphous or polycrystalline material.

Abstract: Provided is a solid-state image sensor and an electronic device capable of suppressing the occurrence of a strong electrical field near a transistor while being compact. The solid-state image sensor includes a photoelectric conversion element that performs photoelectric conversion, an element isolation that penetrates from a first main surface to a second main surface of a substrate and that is formed between pixels including the photoelectric conversion element, and a conductive part provided in close contact with a first main surface side of the element isolation.

Abstract: A photonic chip includes an optical layer bonded, via a bonding interface, to a carrier, and a laser source having a waveguide encapsulated in an encapsulating sublayer of the optical layer, the waveguide having a first electrical contact embedded in the encapsulating sublayer. The photonic chip also includes an interconnect metal network forming a via that extends, in the optical layer, from the bonding interface to the first embedded electrical contact of the waveguide, the interconnect metal network having metal vias that electrically connect to one another metals lines that extend mainly parallel to the plane of the chip, the metal lines being arranged one above the other within the optical layer.

Abstract: A manufacturing method of an image pickup apparatus for endoscope includes: manufacturing two optical wafers each of which has a glass wafer as a base substrate and is a hybrid lens wafer including a plurality of resin lenses, and a spacer wafer including a plurality of spacers and being formed with an inorganic material; manufacturing a bonded wafer in which space in which the plurality of resin lenses are disposed is hermetically sealed by directly bonding the two optical wafers and the spacer wafer at a temperature lower than a softening point of the plurality of resin lenses; disposing a plurality of image pickup members on the bonded wafer; and cutting the bonded wafer on which the plurality of image pickup members are disposed.

Abstract: Back-illuminated DUV/VUV/EUV radiation or charged particle image sensors are fabricated using a method that utilizes a plasma atomic layer deposition (plasma ALD) process to generate a thin pinhole-free pure boron layer over active sensor areas. Circuit elements are formed on a semiconductor membrane's frontside surface, and then an optional preliminary hydrogen plasma cleaning process is performed on the membrane's backside surface. The plasma ALD process includes performing multiple plasma ALD cycles, with each cycle including forming an adsorbed boron precursor layer during a first cycle phase, and then generating a hydrogen plasma to convert the precursor layer into an associated boron nanolayer during a second cycle phase. Gasses are purged from the plasma ALD process chamber after each cycle phase. The plasma ALD cycles are repeated until the resulting stack of boron nanolayers has a cumulative stack height (thickness) that is equal to a selected target thickness.

Abstract: A pixel with enhanced quantum efficiency comprises a semiconductor body that has a first surface configured as an entrance surface and a light capturing region configured for capturing light that is incident on the first surface. The pixel further comprises a structured interface, isolation layers on at least two surfaces of the semiconductor body that are perpendicular to the first surface, and a filter element that is arranged at a distance from the first surface such that light that is incident on the first surface at an angle of incidence smaller than a critical angle impinges on the filter element.

Abstract: An image sensor is provided. An image sensor includes: a substrate including an active pixel sensor region, an optical black sensor region, and a boundary region provided between the active pixel sensor region and the optical black sensor region; a photoelectric conversion element provided inside the substrate on the boundary region; a passivation layer provided on the substrate; a grid trench formed on the boundary region of the substrate and extending from an upper surface of the passivation layer toward an inside of the passivation layer; grid patterns, each of the grid patterns being provided on the passivation layer on each of the active pixel sensor region and the boundary region of the substrate, at least a part of a grid pattern being provided inside the grid trench; and a color filter provided between the grid patterns.

Abstract: The present disclosure provides a package structure having a photonic integrated circuit, the package structure includes a substrate, a chip and an optical module. The chip has an optical waveguide structure and a recessed portion. The optical waveguide structure is adjacent to the recessed portion. The recessed portion faces the substrate, and the chip is engaged to the substrate by flip chip. The optical module is provided in the recessed portion of the chip.