Abstract: The solid-state image sensor includes a semiconductor substrate having first and second photoelectric conversion elements, a color filter layer, and a hybrid layer. The isolation structure is disposed between the first and second photoelectric conversion elements. The color filter layer is disposed above the semiconductor substrate. The hybrid layer is disposed between the semiconductor substrate and the color filter layer. The hybrid layer includes a first partition structure, a second partition structure, and a transparent layer. The first partition structure is disposed to correspond to the isolation structure. The second partition structure is surrounded by the first partition structure. The transparent layer is between the first partition structure and the second partition structure. The refractive index of the first partition structure and the refractive index of the second partition structure are lower than the refractive index of the transparent layer.

Abstract: A display device includes a display area and a peripheral area. A display layer includes a plurality of display elements arranged thereon. A thin-film encapsulation layer is arranged on the display layer and includes first, second, and third encapsulation layers. The second encapsulation layer is on the first encapsulation layer. The third encapsulation layer is on the second encapsulation layer. A touch sensing layer is arranged on the thin-film encapsulation layer and includes touch electrodes and trace lines. The display area is partially bent about an axis, and the third encapsulation layer is bent along the axis and has a structure in which a first layer and a second layer are alternately stacked. The first layer includes an inorganic insulating material, and the second layer includes a silicon carbon compound material.

Abstract: An optical filter (1a) includes a light-absorbing layer (10). The light-absorbing layer absorbs light in at least a portion of the near-infrared region. When light with a wavelength of 300 nm to 1200 nm is incident on the optical filter (1a) at incident angles of 0°, 30°, and 40°, the optical filter (1a) satisfies given transmittance requirements. IE?1/?2?1 to ?2, IAE?1/?2?1 to ?2, and ISE?1/?2?1 to ?2 defined by the following equations (1) to (3) for two incident angles ?1° and ?2° (?1<?2) selected from 0°, 30°, and 40° satisfy given requirements in a given domain of a wavelength ?.

Abstract: An LED lamp A includes a plurality of LED modules 2 each including an LED chip 21, and a support member 1 including a support surface 1a on which the LED modules 2 are mounted. The LED modules 2 include a plurality of kinds of LED modules, or a first through a third LED modules 2A, 2B and 2C different from each other in directivity characteristics that represent light intensity distribution with respect to light emission directions. This arrangement ensures that the entire surrounding area can be illuminated with sufficient brightness.

Abstract: A photosensitive element driving mechanism is provided and includes a fixed assembly, a first movable assembly, a photosensitive element and a first driving assembly. The fixed assembly has a base plate. The first movable assembly includes a circuit member movable relative to the fixed assembly, and the circuit member includes a circuit member body and a movable cantilever. The photosensitive element is configured to receive light traveling along an optical axis. The photosensitive element is disposed on the circuit member body and is electrically connected to the circuit member. The first driving assembly is configured to drive the first movable assembly to move relative to the fixed assembly. There is a gap between the first movable assembly and the fixed assembly, and only the photosensitive element is disposed on the circuit member body.

Abstract: A depth pixel of a time-of-flight (ToF) sensor includes a common photogate disposed in a center region of the depth pixel, a plurality of floating diffusion regions disposed in a peripheral region surrounding the center region, a plurality of demodulation transfer gates disposed in the peripheral region, and a plurality of overflow gates disposed in the peripheral region. The demodulation transfer gates transfer a photo charge collected by the common photogate to the plurality of floating diffusion regions. The demodulation transfer gates are symmetric with respect to each of a horizontal line and a vertical line that pass through a center of the depth pixel and are substantially perpendicular to each other. The overflow gates drain the photo charge collected by the common photogate, and are symmetric with respect to each of the horizontal line and the vertical line.

Abstract: The present technology relates to a semiconductor chip and an electronic apparatus that can suppress degradation of optical characteristics of a semiconductor chip including an image pickup device. A semiconductor chip includes: an image pickup device; a transparent protective member that protects the image pickup device; an IR cut film arranged between a light-receiving surface of the image pickup device and the protective member; a bonding layer that bonds the IR cut film and the protective member together; and a protective film that covers side surfaces of the IR cut film and the bonding layer. The present technology can be applied to, for example, a semiconductor chip for an image pickup device.

Abstract: A solid-state imaging device includes a plurality of photoelectric conversion portions each provided to correspond to each of a plurality of pixels in a semiconductor substrate and receiving incident light through a light sensing surface, and a pixel separation portion that is embedded into a trench provided on a side portion of the photoelectric conversion portion and electrically separates the plurality of pixels in a side of an incident surface of the semiconductor substrate into which the incident light enters. The pixel separation portion is formed by an insulation material which absorbs the incident light entering the light sensing surface.

Abstract: An optical sensor device and a method for forming the same are provided, including forming a curable transparent material on a substrate, wherein the substrate has a plurality of optical sensor units therein; providing a transparent template, which has a plurality of concaves; imprinting the curable transparent material with the transparent template to form a plurality of convexes corresponding to the plurality of concaves; and curing the curable transparent material to form a transparent layer having a micro-lens array. The step of curing the curable transparent material includes adhering the transparent template to the curable transparent material to act as a cover plate for the optical sensor device.

Abstract: A photosensitive green composition for a color filter of a solid-state imaging element, contains a colorant (A), a binder resin (B), a photopolymerization initiator (C), a photopolymerizable monomer (D), an ultraviolet absorber (E), and a monofunctional thiol (F), wherein the colorant (A) contains C.I. Pigment Green 36 and/or C.I. Pigment Green 58.

Abstract: The height of a solid-state imaging element is further reduced as compared to the related art. A solid-state imaging element that is a wafer-level chip size package, including: an optical sensor chip; a protective layer that is stacked on a light receiving surface of the optical sensor chip; and a rewiring layer that is stacked on a surface opposite to the light receiving surface of the optical sensor chip, in which a connection terminal of the rewiring layer is a copper flat pad without a solder ball, an alloy layer of tin and copper is not formed on a front surface of the flat pad, and a thermal expansion coefficient of the protective layer is substantially balanced with a thermal expansion coefficient of the rewiring layer.

Abstract: An image sensing device that includes a reinforced structure is disclosed. The image sensing device includes a semiconductor substrate structured to include a pixel region including a plurality of unit pixels and a peripheral region located outside the pixel region, a plurality of microlenses disposed over the semiconductor substrate in the pixel region, a structural reinforcement layer disposed over the semiconductor substrate in the peripheral region, and a lens capping layer structured to cover the microlenses and at least of the structural reinforcement layer. The structural reinforcement layer includes a plurality of fingers each finger vertically structured to have a rounded upper end and laterally extend to have a predetermined length toward the pixel region. The fingers are consecutively arranged and connected to each other in a lateral direction, and side surfaces of fingers are in contact with side surfaces of immediately adjacent fingers.

Abstract: An LED lamp A includes a plurality of LED modules 2 each including an LED chip 21, and a support member 1 including a support surface 1a on which the LED modules 2 are mounted. The LED modules 2 include a plurality of kinds of LED modules, or a first through a third LED modules 2A, 2B and 2C different from each other in directivity characteristics that represent light intensity distribution with respect to light emission directions. This arrangement ensures that the entire surrounding area can be illuminated with sufficient brightness.

Abstract: Quantum dragon materials and devices have unit (total) transmission of electrons for a wide range of electron energies, even though the electrons do not undergo ballistic propagation, when connected optimally to at least two external leads. Quantum dragon materials and devices, as well as those that are nearly quantum dragons, enable embodiments as quantum dragon electronic or optoelectronic devices, including field effect transistors (FETs), sensors, injectors for spin-polarized currents, wires having integral multiples of the conductance quantum, and wires with zero electrical resistance. Methods of devising such quantum dragon materials and devices are also disclosed.

Abstract: A Light Detection and Ranging (LIDAR) apparatus includes a detector having a first pixel and a second pixel configured to output respective detection signals responsive to light incident thereon, and receiver optics configured to collect the light over a field of view and direct first and second portions of the light to the first and second pixels, respectively. The first pixel includes one or more time of flight (ToF) sensors, and the second pixel includes one or more image sensors. At least one of the receiver optics or arrangement of the first and second pixels in the detector is configured to correlate the first and second pixels such that depth information indicated by the respective detection signals output from the first pixel is correlated with image information indicated by the respective detection signals output from the second pixel. Related devices and methods of operation are also discussed.

Abstract: A solid-state imaging device includes first through third substrates. The first substrate includes a first semiconductor substrate and a first multi-layered wiring layer stacked thereon. The second substrate includes a second semiconductor substrate and a second multi-layered wiring layer stacked thereon. The third substrate includes a third semiconductor substrate and a third multi-layered wiring layer stacked thereon. A coupling structure for electrically coupling at least two of the first through third substrates includes a via. The via exposes a predetermined wiring line in the second multi-layered wiring layer while exposing a portion of a predetermined wiring line in the first multi-layered wiring layer from a back surface side of the first substrate, or exposes a predetermined wiring line in the third multi-layered wiring layer while exposing a portion of the predetermined wiring line in the first multi-layered wiring layer or the second multi-layered wiring layer from the back surface.

Abstract: A first semiconductor device includes: a first wiring layer including a first interlayer insulating film, a first electrode pad, and a first dummy electrode, the first electrode pad being embedded in the first interlayer insulating film and having one surface located on same plane as one surface of the first interlayer insulating film, and the first dummy electrode being embedded in the first interlayer insulating film, having one surface located on same plane as the one surface of the first interlayer insulating film, and being disposed around the first electrode pad; and a second wiring layer including a second interlayer insulating film, a second electrode pad, and a second dummy electrode, the second electrode pad being embedded in the second interlayer insulating film, having one surface located on same surface as one surface of the second interlayer insulating film, and being bonded to the first electrode pad, and the second dummy electrode having one surface located on same plane as the surface located

Abstract: A single crystal multilayer low-loss optical component including first and second layers made from dissimilar materials, with the materials including the first layer lattice-matched to the materials including the second layer. The first and second layers are grown epitaxially in pairs on a growth substrate to which the materials of the first layer are also lattice-matched, such that a single crystal multilayer optical component is formed. The optical component may further include a second substrate to which the layer pairs are wafer bonded after being removed from the growth substrate.

Abstract: An image sensor device is disclosed, which blocks noise of a pad region. The image sensor device includes a substrate including a first surface and a second surface that are arranged to face each other, a pad disposed over the first surface of the substrate, and a through silicon via (TSV) formed to penetrate the substrate, and disposed at both sides of the pad in a first direction.

Abstract: There is provided a solid-state imaging device including a semiconductor substrate on which photoelectric conversion devices are arranged in an imaging device region in a two-dimensional array, and a stacked body formed by stacking layers on the semiconductor substrate, wherein the stacked body includes an in-layer lens layer that has in-layer lenses each provided at a position corresponding to each of the photoelectric conversion devices, a planarization layer that is stacked on the in-layer lens layer and that has a generally planarized surface, and an on-chip lens layer that is an upper layer than the planarization layer and that has on-chip lenses each provided at a position corresponding to each of the photoelectric conversion devices, and the in-layer lens layer has structures at a height generally equal to a height of the in-layer lenses, the structures being provided on an outside of the imaging device region.

Abstract: A solid-state imaging device includes a semiconductor layer on which a plurality of pixels are arranged along a light-receiving surface being a main surface of the semiconductor layer, photoelectric conversion units provided for the respective pixels in the semiconductor layer, and a trench element isolation area formed by providing an insulating layer in a trench pattern formed on a light-receiving surface side of the semiconductor layer, the trench element isolation area being provided at a position displaced from a pixel boundary between the pixels.

Abstract: A pixel-array substrate includes a semiconductor substrate and a passivation layer. The semiconductor substrate includes a pixel array surrounded by a periphery region. A back surface of the semiconductor substrate forms, in the periphery region, a plurality of first peripheral-trenches extending into the semiconductor substrate. The passivation layer is on the back surface and lines each of the plurality of first peripheral-trenches.

Abstract: There is provided an image module package including a substrate, a photo sensor chip, a molded transparent layer and a glass filter. The substrate has an upper surface. The photo sensor chip is attached to the upper surface of the substrate and electrically connected to the substrate. The molded transparent layer covers the photo sensor chip and a part of the upper surface of the substrate, wherein a top surface of the molded transparent layer is formed with a receptacle opposite to the photo sensor chip. The glass filter is accommodated in the receptacle.

Abstract: Provided are a solid-state imaging apparatus, a method for manufacturing a solid-state imaging apparatus, and an electronic apparatus equipped with a solid-state imaging apparatus that can reduce the size of a semiconductor chip in such a way that one semiconductor substrate having a logic circuit controls two sensors. Provided is a solid-state imaging apparatus including a first sensor, a first semiconductor substrate having a memory, a second semiconductor substrate having a logic circuit, and a second sensor, in which the first sensor, the first semiconductor substrate, the second semiconductor substrate, and the second sensor are arranged in this order.

Abstract: A semiconductor device includes a first dielectric structure, a second dielectric structure, a first substrate between the first dielectric structure and the second dielectric structure, a passivation structure over the second dielectric structure, a first metallic structure over the first dielectric structure, a second metallic structure over the passivation structure, and a third metallic structure in the first and second dielectric structures, the first substrate, and the passivation structure. The second dielectric structure is between the passivation structure and the first substrate. The first metallic structure is electrically connected to the second metallic structure through the third metallic structure, the third metallic structure includes a first portion in the first dielectric structure and the first substrate, a second portion in the second dielectric structure and a third portion in the passivation structure.

Abstract: An image sensing device includes a substrate layer in which an array of photoelectric conversion elements is formed, grid structures disposed over the substrate layer to divide space above the substrate into different sensing regions, each grid structure including an air layer, color filters formed to fill bottom portions of spaces between the grid structures, the color filters having a higher refractive index than the air layer, and a lens layer disposed over the grid structures and the color filters such that part of the lens layer fills top portions of the spaces between the grid structures, the lens layer having a higher refractive index than of the color filters.

Abstract: Disclosed are devices for optical sensing and manufacturing method thereof. In one embodiment, a device for optical sensing includes a substrate, a photodetector and a reflector. The photodetector is disposed in the substrate. The reflector is disposed in the substrate and spaced apart from the photodetector, wherein the reflector has a reflective surface inclined relative to the photodetector that reflects light transmitted thereto to the photodetector.

Abstract: A solid-state imaging element including: a photoelectric conversion layer, a first electrode and a second electrode opposed to each other with the photoelectric conversion layer interposed therebetween, a semiconductor layer provided between the first electrode and the photoelectric conversion layer, an accumulation electrode opposed to the photoelectric conversion layer with the semiconductor layer interposed therebetween, an insulating film provided between the accumulation electrode and the semiconductor layer, and a barrier layer provided between the semiconductor layer and the photoelectric conversion layer.

Abstract: An image sensing device is provided to include a semiconductor substrate configured to include a photoelectric conversion element that generates photocharges in response to light incident to the photoelectric conversion element, a plurality of microlenses disposed over the semiconductor substrate and configured to allow the incident light to converge upon the photoelectric conversion element, and a polarization structure disposed between the semiconductor substrate and the microlenses and configured to transmit light of a polarization oriented in a specific direction to the photoelectric conversion element, wherein the polarization structure includes one or more air layers.

Abstract: A camera module and an array camera module based on an integral packing process are disclosed. The camera module or each of the camera module units of the array camera module includes a circuit board, an integral base, a photosensitive element operatively connected to the circuit board, a lens, a light filter holder installed at the integral base and a light filter installed at the light filter holder. The light filter is not required to be directly installed to the integral base, so that the light filter is protected and the requiring area of the light filter is reduced.

Abstract: An image-sensing device is provided. The image-sensing device includes a substrate, a light-sensing element, a first dielectric layer, a light-guiding structure, and a patterned conductive layer. The light-sensing element is disposed in the substrate. The first dielectric layer is disposed on the first side of the substrate. The light-guiding structure is disposed in the first dielectric layer. The patterned conductive layer is disposed between the light-sensing element and the light-guiding structure. In addition, the patterned conductive layer includes a subwavelength structure. An image-sensing system including the above image-sensing device is also provided.

Abstract: An embodiment discloses a semiconductor device package comprising: a body including a cavity; a semiconductor device disposed in the cavity; a light transmitting member disposed in the cavity; and an adhesive layer for fixing the light transmitting member to the body, wherein the semiconductor device generates light in an ultraviolet wavelength band, and the adhesive layer comprises polymer resin and wavelength conversion particles which absorb the light in the ultraviolet wavelength band and generate light in a visible wavelength band.

Abstract: A method includes providing a semiconductor substrate having a front side surface and a back side surface opposite to the front side surface. A photosensitive region of the semiconductor substrate is etched to form a recess. A semiconductor material is deposited on the semiconductor substrate to form a radiation sensing member filling the recess. The semiconductor material has an optical band gap energy smaller than 1.77 eV. A device layer is formed over the front side surface of the semiconductor substrate and the radiation sensing member. A trench isolation is formed in an isolation region of the semiconductor substrate and extending from the back side surface of the semiconductor substrate.

Abstract: The present technology relates to a solid-state imaging device, a manufacturing method, and an electronic device, which can improve sensitivity while improving color mixing. The solid-state imaging device includes a first wall provided between a pixel and a pixel arranged two-dimensionally to isolate the pixels, in which the first wall includes at least two layers including a light shielding film of a lowermost layer and a low refractive index film of which refractive index is lower than the light shielding film. The present technology can be applied to, for example, a solid-state imaging device, an electronic device having an imaging function, and the like.

Abstract: An image sensing device, method, an electronic apparatus, and a medium are provided. The image sensing device includes an image acquisition circuit comprising a plurality of image acquisition layer arrays, where at least one of the plurality of image acquisition layer arrays includes a reference layer, a first acquisition layer, and a second acquisition layer. The first acquisition layer is located under the reference layer and is configured to interact with the reference layer, to which a first electric signal is applied, to generate a first image signal. The second acquisition layer is located under the first acquisition layer and is configured to interact with the first acquisition layer to generate a second image signal. An image processing circuit is connected with the image acquisition circuit and configured to generate a target image according to the first image signal and the second image signal.

Abstract: Provided is a highly-sensitive image-capture element and an image capture device that can be simply manufactured, have little polarization dependency, and have micro-spectroscopic elements capable of separating incident light into three wavelength ranges integrated facing a pixel array. An image capture element has a transparent layer having a low refractive index made of SiO2 or the like and a plurality of micro-lenses laminated on a pixel array in which pixels each including a photoelectric conversion element are disposed in an array. Inside the transparent layer having the low refractive index, micro-spectroscopic elements composed of a plurality of microstructures having constant thickness (length in a direction perpendicular to the pixel array) formed of a material such as SiN having a higher refractive index than that of the transparent layer is embedded.

Abstract: An image sensor device is disclosed, which blocks noise of a pad region. The image sensor device includes a substrate including a first surface and a second surface that are arranged to face each other, a pad disposed over the first surface of the substrate, and a through silicon via (TSV) formed to penetrate the substrate, and disposed at both sides of the pad in a first direction.

Abstract: An image sensor including a substrate and an image sensing element is provided. The substrate has an arc surface. The image sensing element is disposed on the arc surface and curved to fit a contour of the arc surface. The image sensing element has a front surface and a rear surface opposite to the front surface and has at least one bonding wire, the bonding wire is connected between the front surface and the substrate, and the rear surface of the image sensing element directly contacts the arc surface. In addition, a manufacturing method of the image sensor is also provided.

Abstract: The present disclosure relates to an image pickup device and an electronic apparatus that enable further downsizing of device size. The device includes: a first structural body and a second structural body that are layered, the first structural body including a pixel array unit, the second structural body including an input/output circuit unit, and a signal processing circuit; a first through-via, a signal output external terminal, a second through-via, and a signal input external terminal that are arranged below the pixel array, the first through-via penetrating through a semiconductor substrate constituting a part of the second structural body, the second through-via penetrating through the semiconductor substrate; a substrate connected to the signal output external terminal and the signal input external terminal; and a circuit board connected to a first surface of the substrate. The present disclosure can be applied to, for example, the image pickup device, and the like.

Abstract: The signal quality of a solid-state imaging element configured to detect address events is enhanced. The solid-state imaging element has open pixels and light-blocked pixels arrayed therein. In the solid-state imaging element, the open pixels each detect whether or not an amount of change in incident light amount exceeds a predetermined threshold, and output a detection signal indicating a result of the detection. On the other hand, in the solid-state imaging element, the light-blocked pixels each output a correction signal based on an amount of noise generated in the open pixels each configured to detect whether or not an amount of change in incident light amount exceeds the predetermined threshold and to output a detection signal indicating a result of the detection.

Abstract: The instant disclosure provides an optical component packaging structure which includes a far-infrared sensor chip, a first metal layer, a packaging housing and a covering member. The far-infrared sensor chip includes a semiconductor substrate and a semiconductor stack structure. The semiconductor substrate has a first surface, a second surface which is opposite to the first surface, and a cavity. The semiconductor stack structure is disposed on the first surface of the semiconductor substrate, and a part of the semiconductor stack structure is located above the cavity. The first metal layer is disposed on the second surface of the semiconductor substrate, the packaging housing is used to encapsulate the far-infrared sensor chip and expose at least a part of the far-infrared sensor chip, and the covering member is disposed above the semiconductor stack structure.

Abstract: The present technology relates to a solid-state imaging element and electronic equipment that allow an increase in the signal charge amount Qs that each pixel can accumulate. A solid-state imaging element according to the first aspect of the present technology includes: a photoelectric conversion section formed in each pixel; and an inter-pixel separation section separating the photoelectric conversion section of each pixel, in which the inter-pixel separation section includes a protruding section having a shape protruding toward the photoelectric conversion section. The present technology can be applied to a back-illuminated CMOS image sensor, for example.

Abstract: A solid-state imaging device includes an imaging element group in which imaging elements each having a photoelectric conversion portion 10 formed on or above a semiconductor substrate 70 and further having a wire grid polarizer 91 and an on-chip microlens 15 are arrayed in a two-dimensional matrix, and a first interlayer insulating layer 83 and a second interlayer insulating layer 84 provided on a light incident side of the photoelectric conversion portions 10. The wire grid polarizer 91 is provided between the first interlayer insulating layer 83 and the second interlayer insulating layer 84, and the on-chip microlens 15 is provided on the second interlayer insulating layer 84. The first interlayer insulating layer 83 and the second interlayer insulating layer 84 include an oxide material or a resin material, and the on-chip microlens includes SiN or SiON.

Abstract: Disclosed are infrared (IR) light detectors. The detectors operate by generating hot electrons in a metallic absorber layer on photon absorption, the electrons being transported through an energy barrier of an insulating layer to a metal or semiconductor conductive layer. The energy barrier is set to bar response to wavelengths longer than a maximum wavelength. Particular embodiments also have a pattern of metallic shapes above the metallic absorber layer that act to increase photon absorption while reflecting photons of short wavelengths; these particular embodiments have a band-pass response.

Abstract: An ESD protection circuit, an array substrate and a display device are disclosed. The ESD protection circuit includes a plurality of first ESD units, each of which includes: a first active layer, a first insulating layer, a first metallic layer, a second insulating layer and a second metallic layer which are disposed on a base substrate; the first active layer includes a plurality of first connection terminals; the first metallic layer includes a plurality of first conductive terminals; the second metallic layer includes a plurality of second conductive terminals an orthographic projection of the first metallic layer and an orthographic projection of the second metallic layer the base substrate are at least partly overlapped with an orthographic projection of the first active layer on the base substrate respectively; and the first conductive terminals and the second conductive terminals are electrically connected with different first connection terminals, respectively.

Abstract: To make it possible to restrain generation of chipping or cracking in a substrate of a laminated lens structure. A laminated lens structure includes substrates with lens which each have a lens disposed inside a through-hole formed in the substrate and which are laminated on one another by direct bonding, in which the substrates are each provided in the vicinity of the outer circumference thereof with through grooves penetrating the substrate. The present technology is applicable, for example, to a compound eye camera module.

Abstract: Methods of forming decoupling capacitors in interconnect structures formed on backsides of semiconductor devices and semiconductor devices including the same are disclosed. In an embodiment, a device includes a device layer including a first transistor; a first interconnect structure on a front-side of the device layer; a second interconnect structure on a backside of the device layer, the second interconnect structure including a first dielectric layer on the backside of the device layer; a contact extending through the first dielectric layer to a source/drain region of the first transistor; a first conductive layer including a first conductive line electrically connected to the source/drain region of the first transistor through the contact; and a second dielectric layer adjacent the first conductive line, the second dielectric layer including a material having a k-value greater than 7.0, a first decoupling capacitor including the first conductive line and the second dielectric layer.

Abstract: A display panel and a display device are provided. The display panel has a display area and a fan-out area. The fan-out area and the display area at least partially overlap. By arranging at least one part of the fan-out area in the display area, the display area of the display panel expends to the fan-out area, and therefore the area of the display area of the display panel is increased to reduce the area of the non-display area occupied by the fan-out area. That is, the problem that the non-display area of the display panel is too large is alleviated and the narrow border and full screen technology are further implemented.

Abstract: In one example, an electronic device includes: an electronic component comprising a sensor and an electrical interconnect; a substrate comprising an electrically conductive material and a translucent mold compound, wherein the electrically conductive material is coupled to the translucent mold compound and wherein the electrical interconnect of the electronic component is coupled to the electrically conductive material of the substrate; and a translucent underfill contacting the electrical interconnect and between the translucent mold compound and the sensor. Other examples and related methods are also disclosed herein.

Abstract: An image sensor includes a plurality of photoelectric detectors, a plurality of color filters, and at least one pixel isolation region between adjacent ones of the photoelectric detectors. The color filters include a white color filter, and the color filters correspond to respective ones of the photoelectric detectors. The at least one pixel isolation region serves to physically and at least partially optically separate the photoelectric detectors from one another.