With Different Sensor Portions Responsive To Different Wavelengths (e.g., Color Imager) Patents (Class 257/440)
  • Patent number: 6894265
    Abstract: A vertical color filter sensor group, formed on a substrate (preferably a semiconductor substrate) by a semiconductor integrated circuit fabrication process, and including at least two vertically stacked, photosensitive sensors. Other aspects of the invention are arrays of such vertical color filter sensor groups, and methods for fabricating such vertical color filter sensor groups and arrays thereof. In some embodiments, the sensor group is a block of solid material having a readout surface. At least two vertically stacked sensors are formed in the block and a trench contact is provided between one of the sensors and the readout surface.
    Type: Grant
    Filed: January 31, 2003
    Date of Patent: May 17, 2005
    Assignee: Foveon, Inc.
    Inventors: Richard B. Merrill, Russel A. Martin
  • Patent number: 6881979
    Abstract: This disclosure describes one-chip micro-integrated optoelectronic sensors and methods for fabricating and using the same. The sensors may include an optical emission source, optical filter and a photodetector fabricated on the same transparent substrate using the same technological processes. Optical emission may occur when a bias voltage is applied across a metal-insulator-semiconductor Schottky contact or a p-n junction. The photodetector may be a Schottky contact or a p-n junction in a semiconductor. Some sensors can be fabricated on optically transparent substrate and employ back-side illumination. In the other sensors provided, the substrate is not transparent and emission occurs from the edge of a p-n junction or through a transparent electrode. The sensors may be used to measure optical absorption, optical reflection, scattering or fluorescence.
    Type: Grant
    Filed: August 18, 2003
    Date of Patent: April 19, 2005
    Assignee: University of Houston
    Inventors: David Starikov, Igor Berishev, Abdelhak Bensaoula
  • Patent number: 6878871
    Abstract: Nanocomposite photovoltaic devices are provided that generally include semiconductor nanocrystals as at least a portion of a photoactive layer. Photovoltaic devices and other layered devices that comprise core-shell nanostructures and/or two populations of nanostructures, where the nanostructures are not necessarily part of a nanocomposite, are also features of the invention. Varied architectures for such devices are also provided including flexible and rigid architectures, planar and non-planar architectures and the like, as are systems incorporating such devices, and methods and systems for fabricating such devices. Compositions comprising two populations of nanostructures of different materials are also a feature of the invention.
    Type: Grant
    Filed: September 4, 2003
    Date of Patent: April 12, 2005
    Assignee: Nanosys, Inc.
    Inventors: Erik Scher, Mihai A. Buretea, Calvin Chow, Stephen Empedocles, Andreas Meisel, J. Wallace Parce
  • Patent number: 6875975
    Abstract: A semiconductor-based, photo detector device capable of simultaneously detecting two or more selected wavelengths of light on a pixel-registered basis. The device has detector layers of selected semiconductor materials of one micron or less in thickness interspersed with contact layers, each detector layer having a different light absorption to wavelength response curve. All contact layers, including detector bias voltages, have electrical contacts on the backside of the pixel for discrete pixel connection to mating connections on a suitable ROIC substrate. Among its several embodiments, there is a multi-color detector array and a single channel per pixel differential optical signal detector.
    Type: Grant
    Filed: December 22, 2000
    Date of Patent: April 5, 2005
    Assignee: Bae Systems Information and Electronic Systems Integration INC
    Inventors: Thomas S. Faska, Michael F. Taylor, Mani Sundaram, Richard J. Williams
  • Patent number: 6870149
    Abstract: A CMOS image sensor obtains color through the use of two or three superposed layers. Each pixel in the image sensor includes a plurality of superposed photosensitive p-n junctions with individual charge integration regions. The combination of each of the superposed layers provides increased sensitivity and resolution of a single chip color imager.
    Type: Grant
    Filed: September 24, 2002
    Date of Patent: March 22, 2005
    Assignee: Micron Technology, Inc.
    Inventor: Vladimir Berezin
  • Patent number: 6864557
    Abstract: A vertical color detector group according to the present invention is formed on a semiconductor substrate and includes layers for collecting photons of different wavelength bands. The color detector group can be programmed to perform dynamic switching between sub-sampled color data and full measured color readout. The color detector group can also be configured in a portion of an array to emulate color filter array patterns, and programmed to dynamically alter the degree to which color information is sub-sampled. The programmable color detector groups can allow for switching between different levels of quality and resolution, allowing for selection of an optimal pattern based on image content or lighting conditions. By combining the color detector group of the present invention with conventional color filters, color filter arrays of more than three colors can be constructed.
    Type: Grant
    Filed: March 20, 2002
    Date of Patent: March 8, 2005
    Assignee: Foveon, Inc.
    Inventors: Richard M. Turner, Richard F. Lyon, Rudolph J. Guttosch, Richard B. Merrill
  • Patent number: 6841816
    Abstract: A vertical color filter sensor group formed on a substrate (preferably a semiconductor substrate) and including at least two vertically stacked, photosensitive sensors. In preferred embodiments, the sensor group includes at least one filter positioned relative to the sensors such that radiation that has propagated through or reflected from the filter will propagate into at least one sensor. Preferably, the filter is or includes a layer that has been integrated with the sensors by a semiconductor integrated circuit fabrication process. In other embodiments, the sensor group includes a micro-lens. Other aspects of the invention are arrays of vertical color filter sensor groups, some or all of which include at least one filter or micro-lens, and methods for fabricating vertical color filter sensor groups and arrays thereof.
    Type: Grant
    Filed: January 31, 2003
    Date of Patent: January 11, 2005
    Assignee: Foveon, Inc.
    Inventors: Richard B. Merrill, Richard F. Lyon, Richard M. Turner, Robert S. Hannebauer, Russel A. Martin
  • Publication number: 20040251477
    Abstract: The invention relates to very small-sized color image sensors.
    Type: Application
    Filed: February 3, 2004
    Publication date: December 16, 2004
    Inventors: Eric Pourquier, Louis Brissot, Gilles Simon, Alain Jutant, Philippe Rommeveaux
  • Patent number: 6828642
    Abstract: A diffraction grating coupled infrared photodetector for providing high performance detection of infrared radiation is described. The photodetector includes a three-dimensional diffractive resonant optical cavity formed by a diffraction grating that resonates over a range of infrared radiation wavelengths. By placing a limited number of p/n junctions throughout the photodetector, the photodetector thermal noise is reduced due to the reduction in junction area. By retaining signal response and reducing the noise, the sensitivity increases at a given operating temperature when compared to traditional photovoltaic and photoconductive infrared photodetectors up to the background limit. The photodetector device design can be used with a number of semiconductor material systems, can form one- and two-dimensional focal plane arrays, and can readily be tuned for operation in the long wavelength infrared and the very long wavelength infrared where sensitivity and noise improvements are most significant.
    Type: Grant
    Filed: April 17, 2001
    Date of Patent: December 7, 2004
    Assignee: Lockhead Martin Corporation
    Inventors: Lewis T. Claiborne, Pradip Mitra
  • Publication number: 20040241920
    Abstract: Method of fabricating a thin-film transistor (TFT) in which a gate metal is deposited onto a substrate in order to form the gate of the thin-film transistor. The substrate may be an insulative substrate or a color filter. In a first method, the gate metal is subjected to an H2 plasma. After subjecting the gate metal to an H2 plasma, the gate insulating film is deposited onto the gate. In a second method, first and second layers of gate insulating film are respectively deposited on the gate at a first and second deposition rates. One layer is deposited under H2 or argon dilution conditions and has improved insulating conditions while the other layer serves to lower the overall compressive stress of the dual layer gate insulator. In a third method, an n+ silicon film is formed on a substrate by maintaining a flow of silane, phosphine and hydrogen gas into a processing chamber at substrate temperatures of about 300° C. or less.
    Type: Application
    Filed: June 2, 2003
    Publication date: December 2, 2004
    Applicants: Applied Materials, Inc., LG Philips Displays USA, Inc.
    Inventors: Mark Hsiao, Dong-Kil Yim, Takako Takehara, Quanyuan Shang, William R. Harshbarger, Woong-Kwon Kim, Duk-Chul Yun, Youn-Gyung Chang
  • Publication number: 20040234872
    Abstract: A negative type colored photosensitive composition for color filter production which is excellent in smoothness, resolution, shape, heat resistance, light resistance, spectral properties, production step simplification, and sensitivity and has satisfactory storage stability. The composition comprises a binder polymer, a photopolymerizable monomer or oligomer, a photopolymerization initiator, a polymerization inhibitor, a dye, and an organic solvent.
    Type: Application
    Filed: March 26, 2004
    Publication date: November 25, 2004
    Inventor: Naofumi Horiguchi
  • Patent number: 6818917
    Abstract: An infrared photodetector structure with voltage-tunable and -switchable photoresponses constructed of superlattices and blocking barriers. The photoresponses of the double-superlattice structure are also insensitive to the operating temperature changes. By using GaAs/AlxGa1-xAs system, the feasibility of this idea is verified. In the embodiment, the photoresponses can be switched between 6˜8.5 and 7.5˜12 m by the bias polarity and are also tunable by the bias magnitude in each detection wavelength range. In addition, the photoresponses are insensitive to operating temperatures ranging from 20 to 80 K. For the SLIP with few periods, the responsivity may be higher than the one with many periods and the operational temperature is higher. These results show the invention can be useful in the design of multicolor imaging systems.
    Type: Grant
    Filed: March 12, 2003
    Date of Patent: November 16, 2004
    Assignees: National Taiwan University, Integrated Crystal Technology Inc.
    Inventors: Chieh-Hsiung Kuan, Hsin-Cheng Chen, Chun-Chi Chen, Sheng-Di Lin, Jen-Hsiang Lu
  • Publication number: 20040222417
    Abstract: A complementary metal oxide semiconductor (CMOS) image sensor includes at least a non-single-crystal-silicone-base substrate, an opaque layer, a polysilicon layer, a source, a drain, a gate dielectric layer, a first transparent gate electrode, and a second gate transparent gate electrode. The opaque layer is formed on the non-single-crystal-silicone-base substrate, and the polysilicon layer, formed on the opaque layer, has a charge-generating region. The source and the drain are formed in the polysilicon layer, and a pre-channel region is formed between the source and the drain. The source is located between the pre-channel region and the charge-generating region. The gate dielectric layer is formed on the polysilicon layer, and the first and the second transparent gate electrodes, formed on the gate dielectric layer, are respectively located above the charge-generating region and the pre-channel region.
    Type: Application
    Filed: October 7, 2003
    Publication date: November 11, 2004
    Inventor: Chien-Sheng Yang
  • Patent number: 6812539
    Abstract: An improved imager pixel arrangement having a light shield over the pixel circuitry, but below the conductive interconnect layers of the pixel. The light shield can be a thin film of opaque (or nearly-opaque) material with openings for contacts to the underlying circuitry. An aperture in the light shield exposes the active region of the pixel's photoconversion device.
    Type: Grant
    Filed: April 10, 2003
    Date of Patent: November 2, 2004
    Assignee: Micron Technology, Inc.
    Inventor: Howard E. Rhodes
  • Publication number: 20040201073
    Abstract: A pixel for detecting red and greed light is a single pixel is described. The pixel comprises a deep N well formed in a P type epitaxial substrate. The pixel comprises a deep N well formed in a P type epitaxial substrate. A number of P wells, which are used as the sensor nodes, are formed in the deep N well. The use of these P wells as the sensor nodes improves the modulation transfer function. The depth of the deep N well is about equal to the depth of hole electron pairs generated by red light in silicon. The depth of the P wells is about equal to the depth of hole electron pairs generated by green light in silicon. A red/green signal is determined at each P well by determining the potentials between each of the P wells and the deep N well after a charge integration cycle with the P wells and the deep N well isolated.
    Type: Application
    Filed: March 31, 2004
    Publication date: October 14, 2004
    Applicant: Dialog Semiconductor Gmbh
    Inventors: Taner Dosluoglu, Michael Henry Brill
  • Patent number: 6803614
    Abstract: An AE/AF solid-state imaging apparatus exhibiting suitable characteristics of spectral sensitivities of an AE sensor and an AF sensor respectively, is actualized, wherein visual sensitivity corrections filters of an optical system are reduced. In the solid-state imaging apparatus includes AF photodiode regions for auto-focusing and An AE photodiode region for executing a photometric process of a photographing region, are integrated on a same semiconductor substrate, characteristics of spectral sensitivities of the AF photodiode regions are different from a characteristic of the spectral sensitivity of the AE photodiode region. Desirably, a peak wavelength of each of the spectral sensitivity characteristics of the AF photodiode regions is positioned on a longer wavelength side than a peak wavelength of the AE photodiode region.
    Type: Grant
    Filed: July 14, 2003
    Date of Patent: October 12, 2004
    Assignee: Canon Kabushiki Kaisha
    Inventor: Hidekazu Takahashi
  • Publication number: 20040188792
    Abstract: The invention concerns a color image sensor that can be used to make a miniature camera, and a corresponding method for making this sensor.
    Type: Application
    Filed: February 3, 2004
    Publication date: September 30, 2004
    Inventors: Louis Brissot, Eric Porquier
  • Publication number: 20040178467
    Abstract: An array of vertical color filter (VCF) sensor groups, each VCF sensor group including at least two vertically stacked, photosensitive sensors. Preferably, the array is fabricated, or the readout circuitry is configured (or has a state in which it is configured), to combine the outputs of sensors of multiple sensor groups such that the array emulates a conventional array of single-layer sensors arranged in a Bayer pattern or other single-layer sensor pattern, and such that the outputs of at least substantially all of the sensors of each of the VCF sensor groups are utilized to emulate the array of single-layer sensors.
    Type: Application
    Filed: December 17, 2003
    Publication date: September 16, 2004
    Applicant: FOVEON, INC.
    Inventors: Richard F. Lyon, Richard B. Merrill
  • Publication number: 20040178464
    Abstract: A vertical color filter sensor group formed on a substrate (preferably a semiconductor substrate) and including at least two vertically stacked, photosensitive sensors, each having a different spectral response. At least one of the sensors includes at least one layer of a semiconductor material other than crystalline silicon (for example, silicon carbide, or InxGa1-xN, or another III-V semiconductor material, or polysilicon, or amorphous silicon). Other aspects of the invention are arrays of such vertical color filter sensor groups, and methods for fabricating such vertical color filter sensor groups and arrays thereof.
    Type: Application
    Filed: January 31, 2003
    Publication date: September 16, 2004
    Applicant: FOVEON, INC.
    Inventors: Richard B. Merrill, Russel A. Martin
  • Publication number: 20040178466
    Abstract: A vertical color filter sensor group, formed on a substrate (preferably a semiconductor substrate) by a semiconductor integrated circuit fabrication process, and including at least two vertically stacked, photosensitive sensors. Other aspects of the invention are arrays of such vertical color filter sensor groups, and methods for fabricating such vertical color filter sensor groups and arrays thereof. In some embodiments, the sensor group is a block of solid material having a readout surface. At least two vertically stacked sensors are formed in the block and a trench contact is provided between one of the sensors and the readout surface.
    Type: Application
    Filed: January 31, 2003
    Publication date: September 16, 2004
    Applicant: FOVEON, INC.
    Inventors: Richard B. Merrill, Russel A. Martin
  • Publication number: 20040178465
    Abstract: A vertical color filter sensor group formed on a substrate (preferably a semiconductor substrate) and including at least two vertically stacked, photosensitive sensors. In preferred embodiments, the sensor group includes at least one filter positioned relative to the sensors such that radiation that has propagated through or reflected from the filter will propagate into at least one sensor. Preferably, the filter is or includes a layer that has been integrated with the sensors by a semiconductor integrated circuit fabrication process. In other embodiments, the sensor group includes a micro-lens. Other aspects of the invention are arrays of vertical color filter sensor groups, some or all of which include at least one filter or micro-lens, and methods for fabricating vertical color filter sensor groups and arrays thereof.
    Type: Application
    Filed: January 31, 2003
    Publication date: September 16, 2004
    Applicant: FOVEON, INC.
    Inventors: Richard B. Merrill, Richard F. Lyon, Richard M. Turner, Robert S. Hannebauer, Russel A. Martin
  • Publication number: 20040178463
    Abstract: A vertical color filter sensor group formed on a substrate (preferably a semiconductor substrate) and including at least two vertically stacked, photosensitive sensors, and an array of such sensor groups. In some embodiments, a carrier-collection element of at least one sensor of the group has substantially larger area, projected in a plane perpendicular to a normal axis defined by a top surface of a top sensor of the group, than does each minimum-sized carrier-collection element of the group. In some embodiments, the array includes at least two sensor groups that share at least one carrier-collection element. Optionally, the sensor group includes at least one filter positioned relative to the sensors such that radiation that has propagated through or reflected from the filter will propagate into at least one sensor of the group.
    Type: Application
    Filed: January 31, 2003
    Publication date: September 16, 2004
    Applicant: FOVEON, INC.
    Inventors: Richard B. Merrill, Richard F. Lyon, Richard M. Turner, Paul M. Hubel
  • Patent number: 6791152
    Abstract: A photodetector device includes a doped semiconductor substrate. A first intrinsic semiconductor material layer, a main reflector, a second intrinsic semiconductor material layer, an upper semiconductor material layer, which is doped the opposite as the substrate, are formed in succession on the semiconductor substrate. An upper electrode is formed on and electrically connected with the upper semiconductor layer, and a lower electrode is electrically connected to the semiconductor substrate. One of the intrinsic semiconductor layers is relatively thin to absorb incident light, while the other is relatively thick. The photodetector device, a p-i-n photodetector, has an I region including the intrinsic semiconductor layers with different thicknesses, and a main reflector therebetween. The thickness of the entire I region can be increased with a reduced transit distance for holes.
    Type: Grant
    Filed: February 26, 2001
    Date of Patent: September 14, 2004
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Woong-lin Hwang, Jun-young Kim, Dong-hoon Chang
  • Patent number: 6790701
    Abstract: A multi-wavelength semiconductor image sensor comprises a p-type Hg0.7Cd0.3Te photo-absorbing layer formed on a single crystal CdZnTe substrate, a CdTe isolation layer deposited on the photo-absorbing layer, a p-type Hg0.77Cd0.23Te photo-absorbing layer deposited on the CdTe isolation layer, n+ regions which are formed in these photo-absorbing layers and form a pn-junction with each of these photo-absorbing layers, an indium electrode connected to each of these n+ regions and a ground electrode connected to the photo-absorbing layer, the semiconductor isolation layer being electrically isolated from the photo-absorbing layer.
    Type: Grant
    Filed: September 6, 2002
    Date of Patent: September 14, 2004
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Keitaro Shigenaka, Fumio Nakata
  • Patent number: 6783900
    Abstract: A color filter array pattern for use in a solid-state imager comprising red sensitive elements located at every other array position, with alternating blue sensitive and green sensitive elements located at the remaining array positions, is disclosed. Since red color is sampled most frequently, the color filter may be part of an in vivo camera system for imaging internal human body organs and tissues.
    Type: Grant
    Filed: May 13, 2002
    Date of Patent: August 31, 2004
    Assignee: Micron Technology, Inc.
    Inventor: Kartik Venkataraman
  • Patent number: 6784512
    Abstract: A photodiode having a resin film painted upon an opening through which signal light goes in and a dielectric multilayered film piled upon the resin film for reflecting noise light. The elasticity of the resin film prevents the dielectric multilayered film from transforming or exfoliating by alleviating inner stress due to piling of tens to hundreds of different rigid dielectric layers.
    Type: Grant
    Filed: March 20, 2002
    Date of Patent: August 31, 2004
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Akira Yamaguchi, Yoshiki Kuhara, Takashi Sasaki
  • Patent number: 6765276
    Abstract: An image sensor system and methods of making such a system are described. The image sensor system includes a color filter array that is formed by a color filter process that incorporates a bottom antireflection coating. The bottom antireflection coating forms a protective layer that protects exposed areas of the active image sensing device structure during formation of the color filter array and, thereby, preserves the intrinsic transmission characteristics of the active image sensing device structure. The bottom antireflection coating also reduces degradation of metal structures (e.g., bonding pads) and pixel edges at the exposed surface of the active image sensing device structure. In addition, the bottom antireflection coating provides a reliable adhesive surface for the color filter array, substantially eliminating lifting of the color filter array resist structures.
    Type: Grant
    Filed: August 23, 2001
    Date of Patent: July 20, 2004
    Assignee: Agilent Technologies, inc.
    Inventors: Duane Fasen, Jack D. Meyer, Cheryl Bailey, John H. Stanback, Kari Hansen
  • Patent number: 6759749
    Abstract: The circuit structure of the present invention has a plurality of conductive path layers and at least one interlayer isolating layer formed between the plurality of conductive path layers. Each of the plurality of conductive path layers has at least one conductive path capable of transmitting light or electricity therethrough. Each of a plurality of input/output (I/O) sections is connected to any one of the plurality of conductive paths. Each of the plurality of conductive path layers has a first laminated structure that includes a plurality of first conductive layers and at least one first isolating layer formed therebetween. The interlayer isolating layer has a second laminated structure that includes a plurality of second isolating layers and at least one second conductive layer formed therebetween.
    Type: Grant
    Filed: April 5, 2002
    Date of Patent: July 6, 2004
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Koichi Miyachi, Yoshihiro Izumi, Hiroshi Gohda
  • Patent number: 6756618
    Abstract: The present invention relates to a complementary metal-oxide semiconductor (CMOS) image sensor. Particularly, the present invention provides effects of suppressing electrical and optical interferences and improving light sensitivity in a unit pixel of a highly integrated and low power consuming CMOS image sensor. In order to achieve these effects, a red pixel is two-dimensionally encompassed by a green pixel and a blue pixel formed with an additional p-type ion implantation region for suppressing the interference between the pixels. Also, in addition to the above-described structure, a photodiode optimized to the blue pixel is formed further to enhance the light sensitivity.
    Type: Grant
    Filed: December 31, 2002
    Date of Patent: June 29, 2004
    Assignee: Hynix Semiconductor Inc.
    Inventor: Hee-Jeong Hong
  • Patent number: 6756616
    Abstract: A CMOS imager having multiple graded doped regions formed below respective pixel sensor cells is disclosed. A deep retrograde p-well is formed under a red pixel sensor cell of a semiconductor substrate to increase the red response. A shallow p-well is formed under the blue pixel sensor cell to decrease the red and green responses, while a shallow retrograde p-well is formed below the green pixel sensor cell to increase the green response and decrease the red response.
    Type: Grant
    Filed: August 30, 2001
    Date of Patent: June 29, 2004
    Assignee: Micron Technology, Inc.
    Inventor: Howard E. Rhodes
  • Patent number: 6753585
    Abstract: An improved vertical photo-detector cell is used in an imaging sensor. Sensor material associated with a given color in a vertical photo-detector cell is coupled to sensor material associated with the same color in an adjacent photo-detector cell such that photo-carriers from adjacent cells are combined. The coupled sensor materials result in an increased size sensor area for the given color. The increased sensor area associated with each pixel in the sensor results in increased sensitivity and improved fill factor for each color. In an imaging sensor array, the vertical photo-detector cells are arranged such that each color plane is arranged in a pattern. Each sensor in a pattern has a central portion and an extending portion. The central portion and the extending portion are each located about a geometrical center that is associated with a pixel in the array.
    Type: Grant
    Filed: December 5, 2002
    Date of Patent: June 22, 2004
    Assignee: National Semiconductor Corporation
    Inventor: Willem Johannes Kindt
  • Patent number: 6750075
    Abstract: A heterostructure or multilayer semiconductor structure having lattice matched layers with different bandgaps is grown by MOCVD. More specifically, a wide bandgap material such as AlInSb or GaInSb is grown on a substrate to form a lower-contact layer. An n-type active layer is lattice matched to the lower contact layer. The active layer should be of a narrow bandgap material, such as InAsSb, InTlSb, InBiSb, or InBiAsSb. A p-type upper contact layer is then grown on the active layer and a multi-color infrared photodetector has been fabricated.
    Type: Grant
    Filed: May 28, 2002
    Date of Patent: June 15, 2004
    Inventor: Manijeh Razeghi
  • Publication number: 20040108565
    Abstract: An improved vertical photo-detector cell is used in an imaging sensor. Sensor material associated with a given color in a vertical photo-detector cell is coupled to sensor material associated with the same color in an adjacent photo-detector cell such that photo-carriers from adjacent cells are combined. The coupled sensor materials result in an increased size sensor area for the given color. The increased sensor area associated with each pixel in the sensor results in increased sensitivity and improved fill factor for each color. In an imaging sensor array, the vertical photo-detector cells are arranged such that each color plane is arranged in a pattern. Each sensor in a pattern has a central portion and an extending portion. The central portion and the extending portion are each located about a geometrical center that is associated with a pixel in the array.
    Type: Application
    Filed: December 5, 2002
    Publication date: June 10, 2004
    Applicant: National Semiconductor Corporation
    Inventor: Willem Johannes Kindt
  • Patent number: 6740807
    Abstract: A differential response light-receiving device comprising: a semiconductor electrode comprising an electrically conductive layer and a photosensitive layer containing a semiconductor sensitized by a dye; an ion-conductive electrolyte layer; and a counter electrode, the differential response light-receiving device making time-differential response to quantity of light to output a photoelectric current. A composite light-receiving device comprising the differential response light-receiving device and a stationary response light-receiving device, and an image sensor using the differential response light-receiving device or the composite light-receiving device are also provided.
    Type: Grant
    Filed: September 27, 2001
    Date of Patent: May 25, 2004
    Assignee: Fuji Photo Film Co., Ltd.
    Inventor: Michio Ono
  • Patent number: 6731397
    Abstract: A method for storing digital information from an image sensor comprises the steps of providing an image sensor producing three-color output data at each of a plurality of pixel locations; providing a digital storage device coupled to the image sensor; sensing three-color digital output data from the image sensor; and storing said three-color output data as digital data in the digital storage device without performing any interpolation on the three-color output data. The data may be compressed prior to storage and expanded after retrieval from storage. In a preferred embodiment, the image sensor comprises a triple-junction active pixel sensor array.
    Type: Grant
    Filed: May 21, 1999
    Date of Patent: May 4, 2004
    Assignee: Foveon, Inc.
    Inventors: Richard B. Merrill, Richard F. Lyon, Carver A. Mead
  • Patent number: 6727521
    Abstract: A vertical color filter detector group according to the present invention is formed on a semiconductor substrate and comprises at least six layers of alternating p-type and n-typed doped regions. PN junctions between the layers operate as photodiodes with spectral sensitivities that depend on the absorption depth versus wavelength of light in the semiconductor. Alternate layers, preferably the n-type layers, are detector layers to collect photo-generated carriers, while the intervening layers, preferably p-type, are reference layers and are connected in common to a reference potential referred to as ground. Each detector group includes a blue-sensitive detector layer at an n-type layer at the surface of the semiconductor, a green-sensitive detector layer at an n-type layer deeper in the semiconductor, and a red-sensitive detector layer at the n-type layer deepest in the semiconductor.
    Type: Grant
    Filed: June 18, 2001
    Date of Patent: April 27, 2004
    Assignee: Foveon, Inc.
    Inventor: Richard B. Merrill
  • Patent number: 6720580
    Abstract: A liquid crystal display device includes a plurality of gate lines on a substrate, a plurality of data lines on the substrate orthogonal to the plurality of gate lines to define a plurality of pixel regions, at least one thin film transistor at crossing points of the plurality of gate lines and the plurality of data lines, a passivation film on a surface of the substrate and the at least one thin film transistor, and a pixel electrode connected to the at least one thin film transistor, wherein corners of the pixel electrode are arcuate shaped such that a distance between adjacent corners of adjacent pixel electrodes is larger than a distance between adjacent contact sides of the adjacent pixel electrodes.
    Type: Grant
    Filed: February 7, 2002
    Date of Patent: April 13, 2004
    Assignee: LG. Phillips LCD Co., Ltd.
    Inventors: Dong Guk Kim, Dong Hoon Lee, Youn Gyoung Chang
  • Patent number: 6707080
    Abstract: A method for making an array of photodiodes with more uniform optical spectral response for the red, green, and blue pixel cells on a CMOS color imager is achieved. After forming a field oxide on a substrate to electrically isolate device areas for CMOS circuits, an array of deep N doped wells is formed for photodiodes for the long wavelength red pixel cells. An array of P doped well regions is formed adjacent to and interlaced with the N doped wells. Shallow diffused N+ regions are formed within the P doped wells for the shorter wavelength green and blue color pixels cells. The shallow diffused photodiodes improve the quantum efficiency (QE), and provide a color imager with improved color fidelity. An insulating layer and appropriate dye materials are deposited and patterned over the photodiodes to provide the array of color pixel cells. The N and P doped wells are also used for the supporting FET CMOS circuits to provide a cost-effective manufacturing process.
    Type: Grant
    Filed: December 16, 2002
    Date of Patent: March 16, 2004
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Ching-Chun Wang, Dun-Nian Yaung, Chien-Hsien Tseng, Shou-Gwo Wuu
  • Patent number: 6699729
    Abstract: A method of planarizing an image sensor substrate is disclosed. The method comprises depositing a first polymer layer over the image sensor substrate. The first polymer layer is patterned to form pillars. Then, a second polymer layer is deposited over the pillars. Optionally, the second polymer layer is etched back.
    Type: Grant
    Filed: October 25, 2002
    Date of Patent: March 2, 2004
    Assignee: OmniVision International Holding Ltd
    Inventor: Katsumi Yamamoto
  • Patent number: 6690041
    Abstract: The present invention relates to the design of and includes monolithically integrated diodes for use in planar, thin-film, photovoltaic devices, such as solar cells.
    Type: Grant
    Filed: May 14, 2002
    Date of Patent: February 10, 2004
    Assignee: Global Solar Energy, Inc.
    Inventors: Joseph H. Armstrong, Scott Wiedeman, Lawrence M. Woods
  • Patent number: 6677516
    Abstract: A dye-sensitized photovoltaic cell comprising an electroconductive support, a porous photovoltaic layer constituted with a porous semiconductor layer containing a photosensitizing dye, a hole transporting layer, and a support on a counter electrode side, the porous photovoltaic layer having a multi-layer structure, and the semiconductor layer having a haze ratio at a wavelength in a visible light region of 60% or more.
    Type: Grant
    Filed: January 29, 2002
    Date of Patent: January 13, 2004
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Yasuo Chiba, Masafumi Shimizu, Liyuan Han, Ryohsuke Yamanaka
  • Patent number: 6678293
    Abstract: A device for stabilizing the operating wavelength (&lgr;) of an electro-optical component having a nominal operating wavelength (&lgr;0) by a wavelength influencing circuit adapted to be driven by a control signal. The device comprises a semiconductor photodiode adapted to be impinged upon by the radiation generated and/or processed by the component and to generate an output signal which is indicative of a difference of the wavelength of the radiation ((&lgr;) with respect to the nominal operating wavelength (&lgr;0, &lgr;i). The semiconductor photodiode includes a plurality of layers jointly defining two opposite diodes generating opposite photocurrents as a result of radiation impinging onto the photodiode. The opposite photocurrents are adapted to generate the control signal to effect the stabilization action.
    Type: Grant
    Filed: November 5, 2002
    Date of Patent: January 13, 2004
    Assignee: Agilent Technologies, Inc.
    Inventors: Lorenzo Colace, Gianlorenzo Masini
  • Patent number: 6674094
    Abstract: A CMOS image sensor is provided with a first pixel group 12 and a second pixel group 13. The first pixel group 12 composed of a plurality of pixels arranged in a matrix at specified pitches PH and PV in the horizontal and vertical directions, respectively. The second pixel group 13 composed of a plurality of pixels arranged similarly in a matrix shifted by about one-half of the pitches PH and PV in the horizontal and vertical directions, respectively from the matrix of the first pixel group. Each of these pixels is composed of a combination of a photodiode PD, a reset transistor RS, a driver transistor D and an address transistor AD. The reset transistors RS belonging to the first and second pixel groups 12, 13 and arranged in a corresponding row of the matrix are connected to a common reset line RSL. Similarly, the address transistors AD belonging to the first and second pixel groups 12, 13 and arranged in a corresponding row of the matrix are connected to a common address line ADL.
    Type: Grant
    Filed: June 20, 2002
    Date of Patent: January 6, 2004
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Hirokazu Sekine
  • Publication number: 20030234432
    Abstract: Image sensors and methods of fabricating the same are provided. The image sensor includes a blocking pattern disposed on photodiodes. The blocking pattern is formed of insulation material having a metal diffusion coefficient which is lower than a silicon oxide diffusion coefficient. Therefore, dark defects of the image sensor are reduced. In addition, the image sensor includes a color-ratio control layer. The color ratio control layer controls color ratios between the sensitivities to blue, green and red. As a result, color distinction of the picture that is embodied by the image sensor can be improved.
    Type: Application
    Filed: June 18, 2003
    Publication date: December 25, 2003
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Jae-Ho Song, Young-Hoon Park, Sang-Hak Shin
  • Publication number: 20030213967
    Abstract: A multicolor organic light emitting device employs vertically stacked layers of double heterostructure devices which are fabricated from organic compounds. The vertical stacked structure is formed on a glass base having a transparent coating of ITO or similar metal to provide a substrate. Deposited on the substrate is the vertical stacked arrangement of three double heterostructure devices, each fabricated from a suitable organic material. Stacking is implemented such that the double heterostructure with the longest wavelength is on the top of the stack. This constitutes the device emitting red light on the top with the device having the shortest wavelength, namely, the device emitting blue light, on the bottom of the stack. Located between the red and blue device structures is the green device structure.
    Type: Application
    Filed: June 11, 2003
    Publication date: November 20, 2003
    Inventors: Stephen R. Forrest, Mark E. Thompson, Paul E. Burrows, Vladimir Bulovic, Gong Gu
  • Publication number: 20030209719
    Abstract: A susceptor for holding semiconductor wafers in an MOCVD reactor during growth of epitaxial layers on the wafers is disclosed. The susceptor comprises a base structure made of a material having low thermal conductivity at high temperature, and has one or more plate holes to house heat transfer plugs. The plugs are made of a material with high thermal conductivity at high temperatures to transfer heat to the semiconductor wafers. A metalorganic organic chemical vapor deposition reactor is also disclosed utilizing a susceptor according to the present invention.
    Type: Application
    Filed: May 13, 2002
    Publication date: November 13, 2003
    Applicant: CREE LIGHTING COMPANY
    Inventors: Shuji Nakamura, Steven DenBaars, Max Batres, Michael Coulter
  • Patent number: 6646318
    Abstract: A combination of materials is used to form the photodiodes of a vertical color imager cell. The materials used to form the photodiodes have different band gaps that allow the photon absorption rates of the photodiodes to be adjusted. By adjusting the photon absorption rates, the sensitivities of the photodiodes and thereby the characteristics of the imager can be adjusted.
    Type: Grant
    Filed: August 15, 2002
    Date of Patent: November 11, 2003
    Assignee: National Semiconductor Corporation
    Inventors: Peter J. Hopper, Philipp Lindorfer
  • Patent number: 6642537
    Abstract: A quantum well infrared photodetector (QWIP) that provides two-color image sensing. Two different quantum wells are configured to absorb two different wavelengths. The QWIPs are arrayed in a focal plane array (FPA). The two-color QWIPs are selected for readout by selective electrical contact with the two different QWIPs or by the use of two different wavelength sensitive gratings.
    Type: Grant
    Filed: September 12, 1997
    Date of Patent: November 4, 2003
    Assignee: California Institute of Technology
    Inventors: Sarath D. Gunapala, Kwong Kit Choi, Sumith V. Bandara
  • Patent number: 6639204
    Abstract: A solid state color imager with preferential response to two or more colors of light includes a first color-selective photoreceptor built in part from a first color-selective semiconductor region limited in depth according to a first color fractional absorption ratio for a first color of light, as well as a second color-selective photoreceptor built in part from a second color-selective semiconductor region limited in depth according to a second color fractional absorption ratio for a second color of light. The imager may provide a light shield above the second color-selective semiconductor region and position the second color-selective photoreceptor in proximity to the first color-selective photoreceptor. The second color-selective photoreceptor may then collect electrons diffusing from the first color-selective photoreceptor and generated by the second color of light.
    Type: Grant
    Filed: July 6, 2001
    Date of Patent: October 28, 2003
    Assignee: Pictos Technologies, Inc.
    Inventor: Richard A. Mann
  • Patent number: 6639292
    Abstract: A UV light sensing element has at least a first electrode and a sensor. The first electrode has a semiconductor containing at least one element selected from Al, Ga and In together with nitrogen or oxygen, and the sensor layer has a semiconductor containing at least one element selected from Al, Ga and In together with nitrogen. A longer wavelength end of an absorption spectrum for the first electrode is located at a position nearer to a shorter wavelength side than a longer wavelength end of an absorption spectrum for the sensor.
    Type: Grant
    Filed: March 11, 2002
    Date of Patent: October 28, 2003
    Assignee: Fuji Xerox Co., Ltd.
    Inventor: Shigeru Yagi