Abstract: A photoreceiver cell with separation of color components of light incident to its surface, formed in a silicon substrate of the conductivity of the first type with an ohmic contact and comprising: the first, second and third regions, which have mutual positioning and configuration, which provide formation of the first and the second channels for diffusion of the secondary charge carriers generated in the substrate regions located under the first and the second potential barriers to the first and the third p-n junctions respectively; in this case, the length of the channels does not exceed the diffusion length of the secondary charge carriers. Some embodiments provide increased spatial resolution of the projected image and its dynamic range. Some embodiments provide small photo-cell area. Some embodiments are used in multielement photoreceivers for video cameras and digital cameras.

Abstract: An image sensor and a method for fabricating the same are disclosed, in which a partial light-shielding layer is additionally arranged on a path of a particular colored light, for example, a red colored light that may cause excessive permeation, to partially shield the corresponding red colored light in a state that red colored light, green colored light and blue colored light are permeated into each photodiode of a semiconductor substrate, so that the permeation position of the red colored light coincides with that of the green colored light and the blue colored light each having the wavelength shorter than that of the red colored light, thereby normally generating optical charges caused by the red colored light in an effective depletion area of the photodiode like those caused by the green colored light and the blue colored light.

Abstract: A single plate system color solid-state image pick-up device of a microlens loading type, the device comprising: a semiconductor substrate; a plurality of light receiving portions formed in a two-dimensional array in a surface portion of the semiconductor substrate; color filters each of which is for any of red, green and blue colors; and microlenses, wherein each of the color filters and each of the microlenses are laminated above on each of the light receiving portions, wherein first ones of the microlenses, corresponding to ones of the light receiving portions on which ones for the red color of the color filters are laminated, have smaller light receiving areas than those of second ones of the microlenses, corresponding to ones of the light receiving portions on which ones for the green color of the color filters are laminated.

Abstract: An image pixel cell with a doped, hydrogenated amorphous silicon photosensor, raised above the surface of a substrate is provided. Methods of forming the raised photosensor are also disclosed. Raising the photosensor increases the fill factor and the quantum efficiency of the pixel cell. Utilizing hydrogenated amorphous silicon decreases the leakage and barrier problems of conventional photosensors, thereby increasing the quantum efficiency of the pixel cell. Moreover, the doping of the photodiode with inert implants like fluorine or deuterium further decreases leakage of charge carriers and mitigates undesirable hysteresis effects.

Abstract: A method of fabricating a CMOS image sensor is provided, in which a trapezoidal microlens pattern profile is formed to facilitate reflowing the microlens pattern and by which a curvature of the microlens may be enhanced to raise its light-condensing efficiency. The method includes forming a plurality of photodiodes on a semiconductor substrate; forming an insulating interlayer on the semiconductor substrate including the photodiodes; forming a protective layer on the insulating interlayer; forming a plurality of color filters corresponding to the photodiodes; forming a top coating layer on the color filters; forming a microlens pattern on the top coating layer; and forming a plurality of microlenses by reflowing the microlens pattern.

Abstract: A semiconductor device includes: a plurality of pixel units disposed in a matrix shape, each of the plurality of pixel units including: a first photoelectric conversion element for converting incident light of a first color into signal charges; a second photoelectric conversion element for converting incident light of a second color into signal charges; a third photoelectric conversion element for converting incident light of a third color into signal charges; and a detector circuit shared by the first to third photoelectric conversion elements for detecting the signal charges converted by each of the first to third photoelectric conversion elements, wherein the plurality of pixel units are pixel units adjacently disposing a row (column) juxtaposing the first photoelectric conversion element and detector circuit and a row (column) juxtaposing the second and third photoelectric conversion elements.

Abstract: A solid-state imaging device is disclosed. In the solid-state imaging device, plural unit areas, each having a photoelectric conversion region converting incident light into electric signals are provided adjacently, in which each photoelectric conversion region is provided being deviated from the central position of each unit area to a boundary position between the plural unit areas, a high refractive index material layer is arranged over the deviated photoelectric conversion region, and a low refractive index material layer is provided over the photoelectric conversion regions at the inverse side of the deviated direction being adjacent to the high refractive index material layer, and optical paths of the incident light are changed by the high refractive index material layer and the low refractive index material layer, and the incident light enters the photoelectric conversion region.

Abstract: A photoelectric conversion element includes a pair of electrodes, a photoelectric conversion layer provided between the pair of electrodes and a stress buffer layer provided between the photoelectric conversion layer and at least one of the electrodes, and the stress buffer layer has a stack structure comprising a crystalline sublayer.

Abstract: A stratified photodiode for high resolution CMOS image sensors implemented with STI technology is provided. The photodiode includes a semi-conductive layer of a first conductivity type, multiple doping regions of a second conductivity type, multiple doping regions of the first conductivity type, and a pinning layer. The multiple doping regions of the second conductivity type are formed to different depths in the semi-conductive layer. The multiple doping regions of the first conductivity type are disposed between the multiple doping regions of the second conductivity type and form multiple junction capacitances without full depletion. In particular, the stratified doping arrangement allows the photodiode to have a small size, high charge storage capacity, low dark current, and low operation voltages.

Abstract: Embodiments relate to a vertical-type CMOS image sensor, a method of manufacturing the same, and a method of gettering the same, in which source and drain regions are expanded to improve grounding and gettering effects. In embodiments, the vertical-type CMOS image sensor may include a silicon substrate, a first photodiode formed in a prescribed part of the silicon substrate, a first epitaxial layer formed on the silicon substrate, a second photodiode formed on the first epitaxial layer to overlap the first photodiode, a second epitaxial layer formed on the first epitaxial layer, a third photodiode formed on the second epitaxial layer to overlap the second photodiode, and first to third grounded dummy moats formed by implanting impurities into uniform parts on the silicon substrate, the first epitaxial layer, and the second epitaxial layer.

Abstract: An information reader includes an imaging device that images a subject illuminated with light in a first wavelength region; an information-reading unit that reads information expressed by a site absorbing light in a second wavelength region based on imaging signals from the imaging device; and an information output unit, wherein the imaging device is a stack-typed imaging device that includes a plurality of pixel sections containing stacked two photoelectric conversion devices, with each of the two photoelectric conversion devices receiving light from the same position of the subject and converting it into the imaging signal, the two photoelectric conversion devices are a first photoelectric conversion device and a second photoelectric conversion device, and the information output unit generates the information based on a first imaging signal and a second imaging signal and outputs the information.

Abstract: An image sensor is provided having: a color filter layer including a red color filter with a first thickness, a green color filter with a second thickness, and a blue color filter with a third thickness; and a microlens array having a first microlens with a fourth thickness formed on the red color filter, a second microlens with a fifth thickness formed on the green color filter, and a third microlens with a sixth thickness formed on the blue color filter. In one embodiment, the sums of the first thickness and the fourth thickness, the second thickness and the fifth thickness, and the third thickness and the sixth thickness can be the same.

Abstract: A dual band imager includes a radiation absorbing layer for absorbing light of a first wavelength coupled to a readout circuit (ROIC), and at least one radiation detector for detecting light of a second wavelength coupled to the ROIC via a corresponding opening extending through the radiation absorbing layer.

Abstract: A sensor element (1, 20, 21, 22) capable of sensing more than one spectral band of electromagnetic radiation with the same (x-y) spatial location, especially where the dimensions x-y-z form a set of Cartesian coordinates with z parallel to the direction of incident electromagnetic radiation, is characterized in that the element consists of a stack of sub-elements (3, 5, 7) each capable of sensing different spectral bands of electromagnetic radiation. These sub-elements (3, 5, 7) each contain a non-silicon semiconductor where the non-silicon semiconductor in each sub-element (3, 5, 7) is sensitive to and/or has been sensitized to be sensitive to different spectral bands of electromagnetic radiation.

Abstract: A color solid state imaging device as defined herein, which includes an output signal processing section including: signal memory means provided for respective columns of the unit pixels, for holding signals read-out from the pixels of the same color of the same unit pixel row, respectively; and row-direction scanning control means for switching between an all pixels reading operation in which the signals held by the respective signal memory means are read out individually and output to the outside and a sum reading operation in which among the signals held by the respective signal memory means signals held by signal memory means corresponding to adjoining unit pixels are read out simultaneously and output to the outside.

Abstract: The invention relates to tunable wavelength-selective optical filters for letting light of a narrow optical spectrum band, centered around an adjustable wavelength, to pass through and to stop wavelengths lying outside this band. More particularly, the invention relates to a process for the collective fabrication of optical filtering components, consisting in producing a plurality of optical filtering components on a transparent substrate. The process further comprises covering the plurality of components with a transparent collective cover, in optically testing each component individually, and in separating the various components from one another. The invention also relates to a wafer of components, comprising a transparent substrate on which a plurality of optical filtering components has been produced, a transparent cover (8) collectively covering the components. The wafer further includes means for individually testing each component.

Abstract: A semiconductor device including a pixel region in which one or more pixels are formed and a DRAM cell region in which one or more DRAM cells for storing output signals from the pixels are formed, characterized in that the layers constituting the pixel region and the DRAM cell region are formed in the same semiconductor process.

Abstract: A fabrication method of a CMOS image sensor including a light-receiving element, at least one transistor, a first dielectric layer, a reflective layer, a second dielectric layer, a protective layer, a material layer, a transparent material layer, an optical filter, and a converging element is provided. The light-receiving element and the transistor are disposed respectively inside the light sensing region and the transistor region. The first dielectric layer is disposed on the substrate, covering the transistor and the light-receiving element. The reflective layer is disposed on the first dielectric layer inside the light sensing region. The second dielectric layer is disposed on the first dielectric layer outside the reflective layer. The material layer is disposed on the first dielectric layer inside the reflective layer. The optical filter is disposed on the transparent material layer. The converging element is disposed on the optical filter inside the light sensing region.

Abstract: A CMOS image sensor and a method of fabricating the same are provided. The CMOS image sensor includes: an epitaxial layer of a first conductivity type, formed in a semiconductor substrate of the first conductivity type; a blue photodiode region of a second conductivity type, formed in the epitaxial layer at a first depth; a green photodiode region of the second conductivity type, spaced apart from the blue photodiode region and formed in the epitaxial layer at a second depth larger than the first depth; and a red photodiode region of the second conductivity type, spaced apart from the green photodiode region and formed in the epitaxial layer at a third depth larger than the second depth.

Abstract: A complementary metal oxide semiconductor (CMOS) device and a method for fabricating the same are provided. The CMOS image sensor includes: a first conductive type substrate including a trench; a channel stop layer formed by using a first conductive type epitaxial layer over an inner surface of the trench; a device isolation layer formed on the channel stop layer to fill the trench; a second conductive type photodiode formed in a portion of the substrate in one side of the channel stop layer; and a transfer gate structure formed on the substrate adjacent to the photodiode to transfer photo-electrons generated from the photodiode.

Abstract: An optical sensing device includes a silicon-on-insulator (SOI) substrate a semiconductor support substrate, an insulating layer located on the semiconductor support substrate, and a semiconductor layer located on the insulating layer. The optical sensing device further includes a visible light sensor located in the semiconductor support substrate, and an ultraviolet ray sensor located in the semiconductor layer.

Abstract: A color sensor comprises: light reception elements that generate color signals corresponding to stimulus values of colors in an RGB color system, the stimulus values of colors comprising a stimulus value of blue (B) and a stimulus value of red (R), wherein the light reception elements comprise a first light reception element that generates a red (R) color signal corresponding to the stimulus values of red (R); and a first portion that adds a signal corresponding to the stimulus value of blue (B) as a positive sensitivity component to one of: the first light reception element; and a red (R) color signal generated by the first light reception element.

Abstract: To provide a back-illuminated type solid-state imaging device capable of color separation of pixels without using a color filter, and a camera module and an electronic equipment module which incorporate the solid-state imaging device. A solid-state imaging device including: a photoelectric conversion element PD formed in a semiconductor substrate 22; a reading-out part which reads out signal charges from the photoelectric conversion element PD formed on one surface side of the semiconductor substrate 22; the other surface of the semiconductor substrate 22 made to a light incidence surface; and a pixel which exclusively makes light of a specific wavelength or longer photoelectrically converted, by adjusting pn junction depths h2 [h2 r, h2 g, h2 b] between the photoelectric conversion element PD and an accumulation layer 28 on the light incidence surface side. A camera module and an electronic equipment module which incorporate the solid-state imaging device.

Abstract: A photoelectric conversion device includes a photoelectric conversion layer that is stacked on a semiconductor substrate and that has first, second, and third photoelectric conversion regions, and first, second, and third dividing regions. The first dividing region is formed at a predetermined depth from a surface of the photoelectric conversion layer in the first photoelectric conversion region, and divides the first photoelectric conversion region into a first surface side region closer to the surface thereof and a first substrate side region closer to the semiconductor substrate. The first dividing region has a through hole. The second dividing region is formed at substantially the same depth as the first dividing region or at a shallower depth than the first dividing region in the second photoelectric conversion region. The third dividing region is formed at a shallower depth than the second dividing region in the third photoelectric conversion region.

Abstract: A light receiving device and an image pickup device in which a plurality of light receiving devices are arranged are provided. The light receiving device comprises a single semiconductor substrate and a light receiving device that has a first photoelectric conversion part and a second photoelectric conversion part. The single semiconductor substrate comprises regions of a first conductivity type and regions of a second conductivity type in an alternately multiply stacked manner. Depths of each of the junction surfaces between the regions of first conductivity type and second conductivity type are formed at depths such that light mainly in the blue or red wavelength regions can be photo-electrically converted. The respective detected wavelengths of the first photoelectric conversion part and second photoelectric conversion part are longer than the central wavelength of the blue wavelength region, and shorter than the central wavelength of the red wavelength region.

Abstract: A photo-detecting apparatus includes a photodiode that coverts light into electricity, a reverse-voltage switching unit that switches a reverse voltage to be applied to the photodiode, a current-difference detecting unit that detects a change in an output current of the photodiode occurring due to switching of the reverse voltage as a current difference, a correspondence retaining unit that retains a correspondence between the current difference and a dark current, a dark-current calculating unit that calculates a dark current by referring to the correspondence based on the current difference detected by the current-difference detecting unit, and a dark-current correcting unit that corrects the output current of the photodiode based on the dark current to find a photocurrent obtained through photoelectric conversion.

Abstract: A solid-state imaging device includes: a plurality of light-receptive elements arranged in a matrix in a semiconductor substrate; and a plurality of color filters corresponding to the plurality of light-receptive elements, respectively. The color filters include a colored film formed by depositing colored particles at an upper layer of the plurality of light-receptive elements, and a resin with which gaps between the colored particles are filled. The resin with which the gaps between the colored particles are filled may be transparent or be colored.

Abstract: An image sensor having a plurality of micro-lenses disposed on a semiconductor substrate. A first micro-lens has a different focal length, height, shape, curvature, thickness, etc., than a second micro-lens. The image sensor may be back side illuminated or front side illuminated.

Abstract: A pinned photodiode with an ultra-shallow highly-doped surface layer of a first conductivity type and a method of formation are disclosed. The ultra-shallow highly-doped surface layer has a thickness of about 100 Angstroms to about 500 Angstroms and a dopant concentration of about 5×1017 atoms per cm3 to about 1×1019 atoms per cm3. The ultra-shallow highly-doped surface layer is formed by diffusion of ions from a doped layer into the substrate or by a plasma doping process. The ultra-shallow pinned layer is in contact with a charge collection region of a second conductivity type.

Abstract: The present invention is based on the principle of depth of penetration of electromagnetic rays. In the case of semiconductor mono-crystalline materials, such as silicon, the depth of penetration of a light ray is proportional to its wavelength. Using this phenomenon, the present invention consists of a pixel having three electrodes that can discriminate between the colors red, green, and blue, and thereby reconstruct a color image.

Abstract: The invention is to suppress a loss in image quality resulting from a sensitivity difference among different colors and to suppress an increase in a chip area. The invention provides for example an image sensor including three light detecting element rows respectively having R, G and B color filters on light detecting apertures, in which the light detecting element in the G light detecting element row has a light detecting area larger than that of the light detecting element in other B and R light detecting element rows and centers of gravity of light detecting parts of the light detecting elements in the respective light detecting element rows are arranged with a constant pitch (pitch Q) among the light detecting element rows and in which the G light detecting element row with a larger light detecting area in the light detecting element is not positioned as an end row among the R, G and B light detecting element rows but as a central light detecting element row.

Abstract: A novel detection pixel micro-structure allowing the simultaneous and continuous detection of several discrete optical frequencies. A focal plane array comprises a plurality of multi-spectral detection pixels and a connecting platform to electrically connect the pixels. Each of the multi-spectral detection pixels form a resonant optical structure that comprises at least two periodic latticed dielectric reflectors, and at least one optical cavity between the said latticed dielectric reflectors. The latticed dielectric reflectors create a plurality of photonic bandgaps in the spectral response of the pixel. In addition, each optical cavity of the pixel comprises at least two optical resonant modes, corresponding to localized Bloch modes supported by the pixel dielectric structure, wherein each optical resonant mode is localized maximally at, and minimally away from, the optical cavity.

Abstract: A sensor is provided. The sensor includes semiconductor layer; a photodiode, an impurity-doped polycrystalline silicon layer; and a gate electrode. The photodiode is formed in the semiconductor layer. The impurity-doped polycrystalline silicon layer is formed above the semiconductor layer. The gate electrode applies a gate voltage to the polycrystalline silicon layer. A wiring layer is provided on a first surface of the semiconductor layer and light is incident on a second surface thereof.

Abstract: A stack-type image sensor using a compound semiconductor. The stack-type image sensor includes a stack of photoelectric conversion units which are sequentially arranged in a light incident direction and which absorb light in ascending order of a wavelength from shortest to longest.

Abstract: The present invention provides a photosensor formed in a semiconductor substrate having a silicon substrate, an insulating layer formed over the silicon substrate, and a silicon semiconductor layer formed over the insulating layer, comprising an ultraviolet photosensitive element formed in the silicon semiconductor layer, and at least one visible light photosensitive element formed in the silicon substrate.

Abstract: A vehicle-mounted imaging device that is mounted in an automobile and performs color imaging has been provided with a plurality of two-dimensionally arranged pixel cells. In each of the pixels, a color filter separates incident light by a multilayer interference filter. The multilayer interference filter is composed of two ?/4 multilayer films and a spacer layer sandwiched therebetween. The multilayer interference filter transmits light in a wavelength region that corresponds to an optical thickness of the spacer layer. The ?/4 multilayer films and spacer layer are composed of inorganic materials.

Abstract: Disclosed are a CMOS image sensor and a manufacturing method thereof. The present CMOS image sensor comprises: first, second, and third photo diodes and a plurality of transistors spaced at a predetermined distance in a semiconductor substrate; a diffusion blocking layer on substantially an entire surface of the substrate, including an opening therein exposing at least one of the photo diodes; an interlevel dielectric layer over the entire surface of the substrate, covering the diffusion blocking layer; first, second and third color filter layers over the interlevel dielectric layer, respectively corresponding to the first, second and third photo diodes, and a plurality of microlenses over the color filter layers, corresponding to each color filter layer.

Abstract: An image sensor includes a metal interconnection and readout circuitry over a first substrate, an image sensing device, and an ion implantation isolation layer. The image sensing device is over the metal interconnection, and an ion implantation isolation layer is in the image sensing device. The image sensing device includes first, second and third color image sensing units, and ion implantation contact layers. The first, second and third color image sensing units are stacked in or on a second substrate. The ion implantation contact layers are electrically connected to the first, second and third color image sensing units, respectively.

Abstract: A photosensor includes a plurality of photosensitive regions including a first photosensitive region connected to a first voltage reference, and at least one additional photosensitive region. A signal collector is connected to the first photosensitive region. At least one switching device is for switching the at least one additional photosensitive region between the first voltage reference and a second voltage reference that is less than the first voltage reference, and for reversibly connecting the at least one additional photosensitive region to the signal collector so that the photosensor is variably responsive to different light levels.

Abstract: Shields that transmit light to be detected and have conductivity are disposed on light receiving surfaces of photodiodes (1 and 2) to prevent electric charges from being induced to the photodiodes (1 and 2) by electromagnetic waves entered from an external. Two kinds of filters having light transmittance depending on a wavelength of light are disposed on the light receiving surfaces of the photodiodes (1 and 2), respectively, to take a difference between their spectral characteristics. The shield and filter may be made of, for example, polysilicon or a semiconductor thin film of a given conductivity type, and may be readily manufactured by incorporating those manufacturing processes into a semiconductor manufacturing process.

Abstract: A solid-state image pickup device comprises: a plurality of photoelectric converting films stacked via an insulating layer, the photoelectric converting films being above a semiconductor substrate in which a signal read circuit is formed, in which each of the photoelectric converting films is sandwiched between a pixel electrode film and an opposing electrode film, wherein the pixel electrode film of an upper one of the photoelectric converting films is connected to the signal read circuit by a longitudinal line passing through a lower one of the photoelectric converting films, and, in the longitudinal line, a passing portion which passes through the lower photoelectric converting film is formed by filling an opening with a conductive material, the opening being formed from a same plane of the pixel electrode film stacked on the lower photoelectric converting film to an upper end face of the insulating layer stacked above the photoelectric converting film.

Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.

Abstract: A photoelectric conversion layer comprising a compound represented by the following formula (1): wherein L represents a divalent or polyvalent connecting group; n represents an integer of 2 or more; and A is a chemical structure represented by the following formula (2): wherein X1 to X8 each independently represents a substituted or unsubstituted carbon atom or a nitrogen atom.

Abstract: An image sensor and a method for manufacturing the same are provided. The image sensor comprises a pixel region defined on a substrate, an interlayer dielectric on the substrate and comprising a trench above the pixel region, a color filter within the trench, and a microlens on the color filter.

Abstract: An optical semiconductor device includes a first light receiving region and a second light receiving region provided on a substrate and the first and second light receiving regions include light receiving elements, respectively. A first anti-reflection film is formed in the first light receiving region of the substrate and a second anti-reflection film is formed in the second light receiving region of the substrate. The reflectance of the first anti-reflection film for a first wavelength range of light is lower than the reflectance of the second anti-reflection film for the first wavelength range of light and the reflectance of the second anti-reflection film for a second wavelength range of light which is different from the first wavelength range of light is lower than the reflectance of the first anti-reflection film for the second wavelength range of light.

Abstract: A semiconductor device includes: a semiconductor substrate; an insulating layer; and a wiring layer that is a high-concentration impurity layer, in this order, wherein the semiconductor device further includes a contact portion that electrically connects the semiconductor substrate with the wiring layer, the contact portion is provided to pass through the wiring layer and the insulating layer to be brought into contact with a surface of the semiconductor substrate, and the contact portion has an impurity concentration lower than that in a connection region of the semiconductor substrate being in contact with the contact portion.

Abstract: A solid-state image sensor of the present invention is a solid-state image sensor in which pixel cells are arranged on a semiconductor substrate, wherein each of the pixel cells includes: a photoelectric conversion unit that performs photoelectric conversion of incident light; and a microlens formed above the photoelectric conversion unit, the microlens corresponding to the photoelectric conversion unit, wherein the microlens includes a transparent layer and a color filter layer.

Abstract: To provide a back-illuminated type solid-state imaging device capable of color separation of pixels without using a color filter, and a camera module and an electronic equipment module which incorporate the solid-state imaging device. A solid-state imaging device including: a photoelectric conversion element PD formed in a semiconductor substrate 22; a reading-out part which reads out signal charges from the photoelectric conversion element PD formed on one surface side of the semiconductor substrate 22; the other surface of the semiconductor substrate 22 made to a light incidence surface; and a pixel which exclusively makes light of a specific wavelength or longer photoelectrically converted, by adjusting pn junction depths h2 [h2 r, h2 g, h2 b] between the photoelectric conversion element PD and an accumulation layer 28 on the light incidence surface side. A camera module and an electronic equipment module which incorporate the solid-state imaging device.

Abstract: A multi-color photo sensor having a first photodiode with a first p-type layer and a first n-type layer, the first photodiode generates charge when illuminated with photons of a first wavelength range, a second photodiode with a second p-type layer and a second n-type layer, the second photodiode generates charge when illuminated with photons of a second wavelength range, and a readout integrated circuit electrically coupled to the first n-type layer of the first photodiode via a first metal interconnect and electrically coupled to the second n-type layer of the second photodiode via a second metal interconnect, the second metal interconnect traverses through the first photodiode to contact the second n-type layer of the second photodiode, the second metal interconnect is separated from the first photodiode by a first passivating insulator.

Abstract: A method for forming an image sensor is provided. The method includes providing a semiconductor substrate having a pixel region and a peripheral circuit region, forming a photoelectric transformation section at the semiconductor substrate of the pixel region, forming a plurality of interlayer dielectrics over the semiconductor substrate with interconnections interposed therebetween, forming a passivation layer, partially patterning the passivation layer at the peripheral circuit region to form a via hole exposing the interconnection and removing the passivation layer and the underlying interlayer dielectric at the pixel region. The method further includes forming a conductive layer to fill the via hole and etching the conductive layer to remove the conductive layer at the pixel region and form a via plug and a conductive pad at the peripheral circuit region. The via plug fills the via hole and the conductive pad protrudes outwardly from the via hole.