Abstract: A back-illuminated type solid-state imaging device including (a) a semiconductor layer on a front surface side of a semiconductor substrate with an insulation film between them; (b) a photoelectric conversion element that constitutes a pixel in the semiconductor substrate; (c) at least part of transistors that constitute the pixel in the semiconductor film; and (d) a rear surface electrode to which a voltage is applied on the rear surface side of the semiconductor substrate, wherein, (1) a semiconductor layer of an opposite conduction type to a charge accumulation portion of the photoelectric conversion element is formed in the semiconductor substrate under the insulation film, and (2) the same voltage as the voltage applied to the rear surface electrode is applied to the semiconductor layer.

Abstract: Provided are an optical receiver and a method of forming the same. The optical receiver includes a lens, a photo detector, and a hetero-junction bipolar transistor. The lens is attached to a backside of a substrate. The photo detector is disposed on a top surface of the substrate. The hetero-junction bipolar transistor is disposed on the top surface of the substrate. The lens condenses an incident optical signal to transmit the condensed optical signal to the photo detector.

Abstract: The present invention is to provide an electromagnetic wave detecting element that can prevent a decrease in light utilization efficiency at sensor portions. The sensor portions are provided so as to correspond to respective intersection portions of scan lines and signal lines, and have semiconductor layer that generate charges due to electromagnetic waves being irradiated, and at whose electromagnetic wave irradiation surface sides upper electrodes are formed, and at whose electromagnetic wave non-irradiation surface sides lower electrodes are formed. Bias voltage is supplied to the respective upper electrodes via respective contact holes by a common electrode line that is formed further toward an electromagnetic wave downstream side than the semiconductor layer.

Abstract: An image sensor including a deep guard ring and a noise blocking area and a method of manufacturing the same. The image sensor includes the deep guard ring and a deep P well surrounding the noise blocking area, thereby preventing crosstalk between adjacent pixels. In addition, an ion implantation layer is divided by the noise blocking area, so that substrate crosstalk is effectively eliminated.

Abstract: Ultra-thin semiconductor devices, including piezoresistive sensing elements can be formed in a wafer stack that facilitates handling many thin device dice at a wafer level. Three embodiments are provided to form the thin dice in a wafer stack using three different fabrication techniques that include anodic bonding, adhesive bonding and fusion bonding. A trench is etched around each thin die to separate the thin die from others in the wafer stack. A tether layer, also known as a tether, is used to hold thin dice or dice in a wafer stack. Such as wafer stack holds many thin dice together at a wafer level for handling and enables easier die picking in packaging processes.

Abstract: According to an embodiment, an active layer is formed on a first surface of a semiconductor substrate, a wiring layer is formed on the active layer, and an insulating layer is formed covering the wiring layer. The first surface of the semiconductor substrate is bonded to a support substrate via the insulating layer, and the semiconductor substrate bonded to the support substrate is thinned leaving the semiconductor substrate having a predetermined thickness which covers the active layer from a second surface. At least a part of area of the thinned semiconductor substrate is removed to expose the active layer.

Abstract: A method of making a backside illuminated sensor is provided. A substrate is provided and a high energy ion implantation is performed over the substrate to implant a first doped region. A layer is formed over the substrate and a self-align high energy ion implantation is performed over the substrate to implant a second doped region over the first doped region. The combined thickness of the first and second doped region is greater than 50 percent of thickness of the substrate and the distance between back surface of the substrate and the first and second doped regions is less than 50 percent of thickness of the substrate. In this way, an enlarged light sensing region is formed through which electrons generated from back surface of the surface may easily reach the pixel.

Abstract: According to one embodiment, a backside illumination solid-state imaging device includes a semiconductor layer, a first light-receiving unit and a second light-receiving unit, a circuit unit, an impurity isolation layer, and a light-shielding film. A first light-receiving unit and a second light-receiving unit are formed adjacent to each other in the semiconductor layer, convert light applied from a lower surface side of the semiconductor layer into a signal, and store electric charges. A circuit unit is formed on an upper surface of the semiconductor layer. An impurity isolation layer is formed to reach to the upper surface from the lower surface in the semiconductor layer and isolates the first light-receiving unit from the second light-receiving unit. A light-shielding film is formed on part of the lower surface side in the impurity isolation layer so as to extend from the lower surface to the upper surface.

Abstract: Provided is a method for fabricating an image sensor device that includes providing a substrate having a front side and a back side; patterning a photoresist on the front side of the substrate to define an opening having a first width, the photoresist having a first thickness correlated to the first width; performing an implantation process through the opening using an implantation energy correlated to the first thickness thereby forming a first doped isolation feature; forming a light sensing feature adjacent to the first doped isolation feature, the light sensing feature having a second width; and thinning the substrate from the back side so that the substrate has a second thickness that does not exceed twice a depth of the first doped isolation feature. A pixel size is substantially equal to the first and second widths.

Abstract: A photodiode array PD1 comprises an n-type semiconductor substrate one face of which is an incident surface of light to be detected; a plurality of pn junction-type photosensitive regions 3 as photodiodes formed on the side of a detecting surface that is opposite to the incident surface of the semiconductor substrate; and a carrier capturing portion 12 formed between adjacent photosensitive regions 3 from among the plurality of photosensitive regions 3 on the detecting surface side of the semiconductor substrate. The carrier capturing portion 12 has one or plurality of carrier capturing regions 13 respectively including pn-junctions, arranged at intervals. Thereby can be realized a semiconductor photodetector and a radiation detecting apparatus which can favorably restrain crosstalk from occurring.

Abstract: According to the embodiments, a semiconductor substrate, an active layer that is formed on one surface of the semiconductor substrate, a wiring layer that is formed on the active layer and includes a wire to be a convex portion on a surface that is not in contact with the active layer, a insulation layer that is formed on the wiring layer to have a concave portion, an embedded layer that is provided on the concave portion of the insulation layer, a bonding layer that is provided on the insulation layer and the embedded layer, and a substrate that is bonded to the bonding layer to face one surface of the semiconductor substrate are included.

Abstract: A back-illuminated image sensor includes a sensor layer of a first conductivity type having a frontside and a backside opposite the frontside. One or more frontside regions of a second conductivity type are formed in at least a portion of the frontside of the sensor layer. A backside region of the second conductivity type is formed in the backside of the sensor layer. A plurality of frontside photodetectors of the first conductivity type is disposed in the sensor layer. A distinct plurality of backside photodetectors of the first conductivity type separate from the plurality of frontside photodetectors are formed in the sensor layer contiguous to portions of the region of the second conductivity type. A voltage terminal is disposed on the frontside of the sensor layer. One or more connecting regions of the second conductivity type are disposed in respective portions of the sensor layer between the voltage terminal and the backside region for electrically connecting the voltage terminal to the backside region.

Abstract: A backside illumination image sensor, a method of fabricating the same, and an electronic system including the backside illumination image sensor, the backside illumination image sensor including a semiconductor substrate, the semiconductor substrate having an upper surface and a lower surface; photodiodes in the semiconductor substrate; and metal interconnections below the semiconductor substrate, wherein each of the photodiodes includes a N-type region, a lower P-type region below the N-type region, and an upper P-type region on the N-type region.

Abstract: The present disclosure provides methods and apparatus for reducing dark current in a backside illuminated semiconductor device. In one embodiment, a method of fabricating a semiconductor device includes providing a substrate having a frontside surface and a backside surface, and forming a plurality of sensor elements in the substrate, each of the plurality of sensor elements configured to receive light directed towards the backside surface. The method further includes forming a dielectric layer on the backside surface of the substrate, wherein the dielectric layer has a compressive stress to induce a tensile stress in the substrate. A backside illuminated semiconductor device fabricated by such a method is also disclosed.

Abstract: A back-illuminated type solid-state image pickup device (1041) includes read circuits (Tr1, Tr2) formed on one surface of a semiconductor substrate (1042) to read a signal from a photo-electric conversion element (PD) formed on the semiconductor substrate (1042), in which electric charges (e) generated in a photo-electric conversion region (1052c1) formed under at least one portion of the read circuits (Tr1, Tr2) are collected to an electric charge accumulation region (1052a) formed on one surface side of the semiconductor substrate (1042) of the photo-electric conversion element (PD) by electric field formed within the photo-electric conversion element (PD). Thus, the solid-state image pickup device and the camera are able to make the size of pixel become very small without lowering a saturation electric charge amount (Qs) and sensitivity.

Abstract: A method of forming a mask for lithography includes the step of forming the mask by using reverse data in which positions of at least part of output terminals are reversed, when forming the mask for lithography used for manufacturing a back-illuminated solid-state imaging device which takes incident light from the side of a surface opposite to the side of a surface on which wiring of a device region in which photoelectric conversion elements are formed is formed.

Abstract: Image sensors with backside illumination image pixel arrays are provided. An image pixel array may have image pixels that are formed on a silicon substrate having front and back surfaces. The pixel array may have photodiodes formed in the front surface. A dielectric stack may be formed on the front surface. The dielectric stack may include interconnect structures and reflective light guides. A color filter array may be formed on the back surface of the substrate. Microlenses may be formed on the color filter array from the side facing the back surface. The pixel array may receive incoming light through the microlenses. The incoming light may enter the substrate through the back surface. The incoming light may penetrate the substrate and may be reflected by a light reflector in the reflective light guide back towards the photodiode. The image pixel array may exhibit improved quantum efficiency, sensitivity, and image contrast.

Abstract: A photoelectric conversion device comprises an n-type surface region, a p-type region which is formed under the surface region, and an n-type buried layer which is formed under the p-type region, wherein the surface region, the p-type region, and the buried layer form a buried photodiode, and a diffusion coefficient of a dominant impurity of the surface region is smaller than a diffusion coefficient of a dominant impurity of the buried layer.

Abstract: The present disclosure provides methods and apparatus for sensor element isolation in a backside illuminated image sensor. In one embodiment, a method of fabricating a semiconductor device includes providing a sensor layer having a frontside surface and a backside surface, forming a plurality of frontside trenches in the frontside surface of the sensor layer, and implanting oxygen into the sensor layer through the plurality of frontside trenches. The method further includes annealing the implanted oxygen to form a plurality of first silicon oxide blocks in the sensor layer, wherein each first silicon oxide block is disposed substantially adjacent a respective frontside trench to form an isolation feature. A semiconductor device fabricated by such a method is also disclosed.

Abstract: A solid-state image sensor and a method for manufacturing thereof and a semiconductor device and a method for manufacturing thereof are provided. A semiconductor substrate is made to be the thin film without using an SOI substrate and cost is reduced. An edge detection portion having hardness larger than that of a semiconductor substrate is formed in the thickness direction of the semiconductor substrate; the semiconductor substrate is made to be the thin film until a position where the edge detection portion is exposed by chemical mechanical polishing from the rear surface; and means Tr1 for reading out a signal from a photoelectric conversion element PD formed in the substrate are formed on the front surface of the semiconductor substrate, where incident light is acquired from the rear surface of the semiconductor substrate.

Abstract: A back-illuminated image sensor includes a sensor layer of a first conductivity type having a frontside and a backside opposite the frontside. An insulating layer is disposed over the backside. A circuit layer is formed adjacent to the frontside such that the sensor layer is positioned between the circuit layer and the insulating layer. One or more frontside regions of a second conductivity type are formed in at least a portion of the frontside of the sensor layer. A backside region of the second conductivity type is formed in the backside of the sensor layer. A plurality of frontside photodetectors of the first conductivity type is disposed in the sensor layer. A distinct plurality of backside photodetectors of the first conductivity type separate from the plurality of frontside photodetectors is formed in the sensor layer contiguous to portions of the backside region of the second conductivity type.

Abstract: Provided is a backside-illuminated sensor including a semiconductor substrate having a front surface and a back surface. A plurality of image sensor elements are formed on the front surface of the semiconductor substrate. At least one of the image sensor elements includes a transfer transistor and a photodetector. The gate of the transfer transistor includes an optically reflective layer. The gate of the transfer transistor, including the optically reflective layer, overlies the photodetector. In one embodiment, the gate overlies the photodetector by at least 5%.

Abstract: Provided is a backside-illuminated solid-state image pickup device capable of allowing peripheral circuits to produce stable waveforms and thereby achieving image characteristics with less noise, the device including: a first-conductivity-type semiconductor layer having a first principal surface and a second principal surface opposed to the first principal surface and also having a pixel area and an analog circuit area; a first P type area formed to lie between the second principal surface and the first principal surface in the analog circuit area; a metal layer formed at least partially on the second principal surface of the first P type area; a VSS electrode electrically connected to the metal layer; a photo-conversion area formed in the pixel area and used to accumulate electric charges generated by photoelectric conversion; and a microlens provided on the second principal surface in the pixel area so as to correspond to the photo-conversion area.

Abstract: A method for fabricating a back-illuminated semiconductor imaging device on an ultra-thin semiconductor-on-insulator wafer (UTSOI) is disclosed. The UTSOI wafer includes a mechanical substrate, an insulator layer, and a seed layer. At least one dopant is applied to the semiconductor substrate. A first portion of an epitaxial layer is grown on the seed layer. A predefined concentration of carbon impurities is introduced into the first portion of the epitaxial layer. A remaining portion of the epitaxial layer is grown. During the epitaxial growth process, the at least one dopant diffuses into the epitaxial layer such that, at completion of the growing of the epitaxial layer, there exists a net dopant concentration profile which has an initial maximum value at an interface between the seed layer and the insulator layer and which decreases monotonically with increasing distance from the interface within at least a portion of at least one of the semiconductor substrate and the epitaxial layer.

Abstract: A solid state imaging device including: a plurality of sensor sections formed in a semiconductor substrate in order to convert incident light into an electric signal; a peripheral circuit section formed in the semiconductor substrate so as to be positioned beside the sensor sections; and a layer having negative fixed electric charges that is formed on a light incidence side of the sensor sections in order to form a hole accumulation layer on light receiving surfaces of the sensor sections.

Abstract: The present invention is a front-side contact, back-side illuminated (FSC-BSL) photodiode arrays and front-side illuminated, back-side contact (FSL-BSC) photodiode arrays having improved characteristics, including high production throughput, low-cost manufacturing via implementation of batch processing techniques; uniform, as well as high, photocurrent density owing to presence of a large continuous homogeneous, heavily doped layer; and back to front intrachip connections via the homogenous, heavily doped layers on the front and back sides of the substrate.

Abstract: A photodiode array with reduced optical crosstalk and an image pickup device using it are provided. The photodiode array 10 according to the present invention has an anti-crosstalk portion B dividing each adjacent pair of photodiodes S, the anti-crosstalk portion B and the photodiodes S individually have a p-type area 16 extending inward from the surface side of a semiconductor laminate, and the inner end of the p-type area of the anti-crosstalk portion, namely the front, is closer to the back surface of the semiconductor laminate than the front of the p-type area of each of the photodiodes.

Abstract: A three-dimensional pixel array, a method of manufacturing a pixel array and an imager including the three-dimensional pixel array. The three-dimensional array includes multiple groups of pixels, each group of pixels including a first layer and a second layer. The first layer includes multiple photosensitive elements, one per pixel in the group, at least one floating diffusion region connected to each photosensitive element in the group via at least one respective transfer gate per pixel and multiple transfer gate lines, at least two transfer gate lines connected to each respective transfer gate in each row of pixels. The second layer includes at least a rest transistor per group and a source follower transistor coupled to the shared floating diffusion in the first layer.

Abstract: Image sensors include a second photoelectric conversion device disposed in a lower portion of a substrate and a first photoelectric conversion device extending between the secondary photoelectric conversion device and a light receiving surface of the substrate. Electrical isolation between the first and second photoelectric conversion devices is provided by a photoelectron barrier, which may be an optically transparent electrically insulating material. MOS transistors may be utilized to transfer photoelectrons generated within the first and second photoelectric conversion devices to a floating diffusion region within the image sensor. These transistors may represent one example of means for transferring photoelectrons generated in the first and second photoelectric conversion devices to a floating diffusion region in the substrate, in response to first and second gating signals, respectively. The first and second gating signals may be active during non-overlapping time intervals.

Abstract: A back-illuminated type solid-state image pickup device (1041) includes read circuits (Tr1, Tr2) formed on one surface of a semiconductor substrate (1042) to read a signal from a photo-electric conversion element (PD) formed on the semiconductor substrate (1042), in which electric charges (e) generated in a photo-electric conversion region (1052c1) formed under at least one portion of the read circuits (Tr1, Tr2) are collected to an electric charge accumulation region (1052a) formed on one surface side of the semiconductor substrate (1042) of the photo-electric conversion element (PD) by electric field formed within the photo-electric conversion element (PD). Thus, the solid-state image pickup device and the camera are able to make the size of pixel become very small without lowering a saturation electric charge amount (Qs) and sensitivity.

Abstract: A backside illuminated imaging sensor with reinforced pad structure includes a device layer, a metal stack, an opening and a frame. The device layer has an imaging array formed in a front side of the device layer and the imaging array is adapted to receive light from a back side of the device layer. The metal stack is coupled to the front side of the device layer where the metal stack includes at least one metal interconnect layer having a metal pad. The opening extends from the back side of the device layer to the metal pad to expose the metal pad for wire bonding. The frame is disposed within the opening to structurally reinforce the metal pad.

Abstract: A backside illuminated image sensor comprises a sensor layer implementing a plurality of photosensitive elements of a pixel array, and an oxide layer adjacent a backside surface of the sensor layer. The sensor layer comprises a seed layer and an epitaxial layer formed over the seed layer, with the seed layer having a cross-sectional doping profile in which a designated dopant is substantially confined to a pixel array area of the sensor layer. The doping profile advantageously reduces dark current generated at an interface between the sensor layer and the oxide layer. The image sensor may be implemented in a digital camera or other type of digital imaging device.

Abstract: Provided is a method of fabricating a backside illuminated image sensor that includes providing a device substrate having a frontside and a backside, where pixels are formed at the frontside and an interconnect structure is formed over pixels, forming a re-distribution layer (RDL) over the interconnect structure, bonding a first glass substrate to the RDL, thinning and processing the device substrate from the backside, bonding a second glass substrate to the backside, removing the first glass substrate, and reusing the first glass substrate for fabricating another backside-illuminated image sensor.

Abstract: Photodetector arrays, image sensors, and other apparatus are disclosed. In one aspect, an apparatus may include a surface to receive light, a plurality of photosensitive regions disposed within a substrate, and a material coupled between the surface and the plurality of photosensitive regions. The material may receive the light. At least some of the light may free electrons in the material. The apparatus may also include a plurality of discrete electron repulsive elements. The discrete electron repulsive elements may be coupled between the surface and the material. Each of the discrete electron repulsive elements may correspond to a different photosensitive region. Each of the discrete electron repulsive elements may repel electrons in the material toward a corresponding photosensitive region. Other apparatus are also disclosed, as are methods of use, methods of fabrication, and systems incorporating such apparatus.

Abstract: A method of manufacturing a backside illuminated image sensor includes providing a start material that has a layer of semiconductor material on a substrate. The layer of semiconductor material has a first face and a second, backside, face. The layer of semiconductor material is processed to form semiconductor devices in the layer adjacent the first face. At least a part of the substrate is removed to leave an exposed face. A passivation layer is formed on the exposed face, the passivation layer having negative fixed charges. The passivation layer can be Al2O3 (Sapphire). The passivation layer can have a thickness less than 5 ?m, advantageously less than 1 ?m, and more advantageously in the range 1 nm-150 nm. Another layer, or layers, can be provided on the passivation layer, including: an anti-reflective layer, a layer to improve passivation, a layer including a color filter pattern, a layer comprising a microlens.

Abstract: A method for fabricating a back-illuminated semiconductor imaging device on a semiconductor-on-insulator substrate, and resulting imaging device is disclosed. The method for manufacturing the imaging device includes the steps of providing a substrate comprising an insulator layer, and an epitaxial layer substantially overlying the insulator layer; fabricating at least one imaging component at least partially overlying and extending into the epitaxial layer; forming a plurality of bond pads substantially overlying the epitaxial layer; fabricating a dielectric layer substantially overlying the epitaxial layer and the at least one imaging component; providing a handle wafer; forming a plurality of conductive trenches in the handle wafer; forming a plurality of conductive bumps on a first surface of the handle wafer substantially underlying the conductive trenches; and bonding the plurality of conductive bumps to the plurality of bond pads.

Abstract: An image sensor includes a device wafer substrate of a device wafer, a device layer of the device wafer, and optionally a heat control structure and/or a heat sink. The device layer is disposed on a frontside of the device wafer substrate and includes a plurality of photosensitive elements disposed within a pixel array region and peripheral circuitry disposed within a peripheral circuits region. The photosensitive elements are sensitive to light incident on a backside of the device wafer substrate. The heat control structure is disposed within the device wafer substrate and thermally isolates the pixel array region from the peripheral circuits region to reduce heat transfer between the peripheral circuits region and the pixel array region. The heat sink conducts heat away from the device layer.

Abstract: A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.

Abstract: A back-illuminated type solid-state imaging device including (a) a semiconductor layer on a front surface side of a semiconductor substrate with an insulation film between them; (b) a photoelectric conversion element that constitutes a pixel in the semiconductor substrate; (c) at least part of transistors that constitute the pixel in the semiconductor film; and (d) a rear surface electrode to which a voltage is applied on the rear surface side of the semiconductor substrate, wherein, (1) a semiconductor layer of an opposite conduction type to a charge accumulation portion of the photoelectric conversion element is formed in the semiconductor substrate under the insulation film, and (2) the same voltage as the voltage applied to the rear surface electrode is applied to the semiconductor layer.

Abstract: A back-illuminated type solid-state imaging device is provided in which an electric field to collect a signal charge (an electron, a hole and the like, for example) is reliably generated to reduce a crosstalk. The back-illuminated type solid-state imaging device includes a structure 34 having a semiconductor film 33 on a semiconductor substrate 31 through an insulation film 32, in which a photoelectric conversion element PD that constitutes a pixel is formed in the semiconductor substrate 31, at least part of transistors 15, 16, and 19 that constitute the pixel is formed in the semiconductor film 33, and a rear surface electrode 51 to which a voltage is applied is formed on the rear surface side of the semiconductor substrate 31.

Abstract: A solid-state imaging device includes a photoelectric conversion section which is provided for each pixel and which converts light incident on a first surface of a substrate into signal charges, a circuit region which reads signal charges accumulated by the photoelectric conversion section, a multilayer film including an insulating film and a wiring film, the multilayer film being disposed on a second surface of the substrate opposite to the first surface, and a transmission-preventing film disposed at least between the wiring film in the multilayer film and the substrate.

Abstract: A solid-state imaging device includes a photoelectric conversion section which is provided for each pixel and which converts light incident on a first surface of a substrate into signal charges, a circuit region which reads signal charges accumulated by the photoelectric conversion section, a multilayer film including an insulating film and a wiring film, the multilayer film being disposed on a second surface of the substrate opposite to the first surface, and a transmission-preventing film disposed at least between the wiring film in the multilayer film and the substrate.

Abstract: Provided is an epitaxial substrate for a back-illuminated image sensor and a manufacturing method thereof that is capable of suppressing metal contaminations and reducing occurrence of a white spot defect of the image sensor, by maintaining a sufficient gettering performance in a device process. The present invention includes forming a gettering sink immediately below a surface of a high-oxygen silicon substrate, forming a first epitaxial layer on the surface of the high-oxygen silicon substrate, and forming a second epitaxial layer on the first epitaxial layer, in which the step of forming the gettering sink includes forming an oxygen precipitate region by applying a long-time heat treatment at a temperature of 650-1150° C. to the high-oxygen silicon substrate.

Abstract: An imaging device is provided and includes: a photoelectric conversion layer that has a silicon crystal structure and generates signal charges upon incidence of light; a multiplication and accumulation layer that multiplies the signal charges by a phenomenon of avalanche electron multiplication; and a wiring substrate that reads the signal charges from the multiplication and accumulation layer and transmits the read signal charges.

Abstract: A component comprising a semiconductor junction (HU) is proposed which is formed from crystalline doped semiconductor layers. A semiconductor circuit (IC) is formed on the surface of the component, and a diode is formed internally and directly below the circuit. Integrated circuit and diode are connected to one another and formed and integrated diode component, in particular a photodiode array.

Abstract: A backside illuminated imaging sensor includes a semiconductor layer and an infrared detecting layer. The semiconductor layer has a front surface and a back surface. An imaging pixel includes a photodiode region formed within the semiconductor layer. The infrared detecting layer is disposed above the front surface of the semiconductor layer to receive infrared light that propagates through the imaging sensor from the back surface of the semiconductor layer.

Abstract: An image device and a method of fabricating the image device include a substrate pattern formed to define an opening and to include a portion of a photodiode for receiving light. Stacked metal interconnection patterns and an interlayer dielectric layer are formed beneath the substrate pattern. A height of the opening equals a height of the substrate pattern, such that an exposed portion of a top surface of the interlayer dielectric layer provides a bottom surface of the opening. An external connection electrode is positioned on the bottom surface of the opening.

Abstract: In a solid-state imaging device, the pixel circuit formed on the first surface side of the semiconductor substrate is shared by a plurality of light reception regions. The second surface side of the semiconductor substrate is made the light incident side of the light reception regions. The second surface side regions of the light reception regions formed in the second surface side part of the semiconductor substrate are arranged at approximately even intervals and the first surface side regions of the light reception regions formed in the first surface side part of the semiconductor substrate are arranged at uneven intervals, respectively, and the second surface side regions and the first surface side regions are joined respectively in the semiconductor substrate so that the light reception regions extend from the second surface side to the first surface side of the semiconductor substrate.

Abstract: A method for forming a semiconductor device with a bonding pad is disclosed. A first substrate having a device area and a bonding area is provided, wherein the first substrate has an upper surface and a bottom surface. Semiconductor elements are formed on the upper surface of the first substrate in the device area. A first inter-metal dielectric layer is formed on the upper surface of the substrate in the bonding area. A lowermost metal pattern is formed in the first inter-metal dielectric layer, wherein the lowermost metal pattern serves as the bonding pad. An opening through the first substrate is formed to expose the lowermost metal pattern.

Abstract: A backside illuminated image sensor includes a substrate, a backside passivation layer disposed on backside of the substrate, and a transparent conductive layer disposed on the backside passivation layer.