Abstract: Image sensors and methods of manufacturing image sensors are provided. One such method includes forming a structure that includes a semiconductor layer extending from a front side to a back side, and a capacitive insulation wall extending through the semiconductor layer. The capacitive insulation wall includes first and second insulating walls separated by a region of a conductor or a semiconductor material. Portions of the semiconductor layer and the region of the conductor or semiconductor material are selectively etched, and the first and second insulating walls have portions protruding outwardly beyond a back side of the semiconductor layer and of the region of the conductor or semiconductor material. A dielectric passivation layer is deposited on the back side of the structure, and portions of the dielectric passivation layer are locally removed on a back side of the protruding portions of the first and second insulating walls.

Abstract: An apparatus includes a layer that has a light incident surface and includes elements, and a wiring structure. Each of the elements includes a photodiode. The photodiode includes first and second regions of first and second conductivity types. A voltage is supplied to the second region through a second-conductivity-type region. The wiring structure includes a first wiring positioned closest to the layer among wirings to supply the voltage to the second-conductivity-type region, a plug connecting the first wiring and the second-conductivity-type region, and a second wiring supplying a voltage to the first region. The second wiring covers the first region when viewed in plan, and a distance between the second wiring and the layer is shorter than a distance between the first wiring and the layer.

Abstract: The present disclosure relates to a solid-state image pickup device and an electronic apparatus that are capable of preventing leakage of charges between adjacent pixels. A plurality of pixels perform photoelectric conversion on light incident from a back surface via different on-chip lenses for each pixel. A pixel separation wall is formed between pixels adjacent to each other, and includes a front-side trench formed from a front surface and a backside trench formed from the back surface. A wiring layer is provided on the front surface. The present disclosure is applicable to, for example, a backside illuminated CMOS image sensor.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip. The integrated chip includes a first photodetector disposed in a first pixel region of a semiconductor substrate and a second photodetector disposed in a second pixel region of the semiconductor substrate. The second photodetector is laterally separated from the first photodetector. A first diffuser is disposed along a back-side of the semiconductor substrate and over the first photodetector. A second diffuser is disposed along the back-side of the semiconductor substrate and over the second photodetector. A first midline of the first pixel region and a second midline of the second pixel region are both disposed laterally between the first diffuser and the second diffuser.

Abstract: Embodiments of the disclosure provide an apparatus for emitting laser light and a system and method for detecting laser light returned from an object. The system includes a transmitter and a receiver. The transmitter includes one or more laser sources, at least one of the laser sources configured to provide a respective native laser beam having a wavelength above 1,100 nm. The transmitter also includes a wavelength converter configured to receive the native laser beams provided by the laser sources and convert the native laser beams into a converted laser beam having a wavelength below 1,100 nm. The transmitter further includes a scanner configured to emit the converted laser beam to the object in a first direction. The receiver is configured to detect a returned laser beam having a wavelength below 1,100 nm and returned from the object in a second direction.

Abstract: Systems, methods, and apparatus for an improved protection from charge injection into layers of a device using resistive structures are described. Such resistive structures, named s-contacts, can be made using simpler fabrication methods and less fabrication steps. In a case of metal-oxide-semiconductor (MOS) field effect transistors (FETs), s-contacts can be made with direct connection, or resistive connection, to all regions of the transistors, including the source region, the drain region and the gate.

Abstract: A structure includes a support 10, a first optical filter layer 24 provided on the support, a light scattering layer 50 provided on the light path of the first optical filter layer 24, and a second optical filter layer 21, 22, 23, 25, and 26 provided on the support 10, on a different region from the region where the first optical filter layer is provided, and the light scattering layer 50 is not provided on the light path of the second optical filter layer.

Abstract: Provided is a method of fabricating a see-through thin film solar cell, the method including preparing a substrate including a molybdenum (Mo) layer on one surface, forming see-through patterns by selectively removing at least parts of the Mo layer, sequentially depositing a chalcogenide absorber layer, a buffer layer, and a transparent electrode layer on the substrate and the Mo layer including the see-through patterns, and forming a see-through array according to a shape of the see-through patterns by removing the chalcogenide absorber layer, the buffer layer, and the transparent electrode layer deposited on the see-through patterns, by irradiating a laser beam from under the substrate toward the transparent electrode layer.

Abstract: The present disclosure relates to a solid-state image pickup device and an electronic apparatus that are capable of preventing leakage of charges between adjacent pixels. A plurality of pixels perform photoelectric conversion on light incident from a back surface via different on-chip lenses for each pixel. A pixel separation wall is formed between pixels adjacent to each other, and includes a front-side trench formed from a front surface and a backside trench formed from the back surface. A wiring layer is provided on the front surface. The present disclosure is applicable to, for example, a backside illuminated CMOS image sensor.

Abstract: The present disclosure relates to a CMOS image sensor, and an associated method of formation. In some embodiments, the CMOS image sensor comprises a floating diffusion region disposed at one side of a transfer gate within a substrate and a photo detecting column disposed at the other side of the transfer gate opposing to the floating diffusion region within the substrate. The photo detecting column comprises a doped sensing layer with a doping type opposite to that of the substrate. The photo detecting column and the substrate are in contact with each other at a junction interface comprising one or more recessed portions. By forming the junction interface with recessed portions, the junction interface is enlarged compared to a previous p-n junction interface without recessed portions, and thus a full well capacity of the photodiode structure is improved.

Abstract: Techniques are disclosed for systems and methods for facilitating pixel readout with partitioned analog-to-digital conversion. A device includes a detector, a capacitor coupled to the detector, a counter circuit coupled to the capacitor, a reset circuit coupled to the capacitor, and a processing circuit. The detector is configured to detect electromagnetic radiation associated with a scene and generate an associated detection signal. The capacitor is configured to, during an integration period, accumulate a voltage based on the detection signal. The counter circuit is configured to, during the integration period, adjust a counter value based on a comparison of the voltage and a reference voltage. The reset circuit is configured to, during the integration period, reset the capacitor based on the comparison. The processing circuit is configured to generate a digital detector output based on the counter value when the integration period has elapsed. Related methods are also provided.

Abstract: Image sensor structures are provided. The image sensor structure includes a substrate having a front side and a backside and a light-sensing region formed in the substrate. The image sensor structure further includes a front side isolation structure surrounding the light sensing region and having an opening region in a top view and a backside isolation structure formed at the backside of the substrate and encompassing the light-sensing region and vertically overlapping the opening region. The image sensor structure further includes a first gate structure formed over the front side of the substrate and overlapping the opening region and the front side isolation structure and a storage node in the substrate adjacent to the first gate structure. In addition, the storage node extends into the opening region.

Abstract: An imaging device may have an array of image sensor pixels that includes infrared image pixels. Backside and frontside reflectors may be incorporated into the infrared pixels to increase effective thicknesses of photosensitive regions within the pixels. In other words, light incident on each pixel may be reflected and traverse the photosensitive region multiple times, thereby allowing silicon in the photosensitive region to absorb infrared light more efficiently. The backside reflector may be interposed between the silicon and a microlens, which may have a toroidal shape to direct light around the backside reflector. If desired, the toroidal lens may have a concave opening. Alternatively, the backside reflector may be ring-shaped, and a spherical microlens may focus light through a center portion of the reflector. A top surface of the silicon layer may be curved to focus light toward the center of the photosensitive region and improve pixel efficiency.

Abstract: An imaging module of the invention includes: an image-sensing device that has a light-receiving face, a terminal surface located on an opposite side of the light-receiving face, and a plurality of image-sensing terminals provided on the terminal surface; a support that has a first end disposed on the terminal surface, a second end disposed on an opposite side of the first end, a side face disposed between the first end and the second end, and a guide disposed on the side face so as to correspond to positions of the image-sensing terminals and that is formed of an insulator; a coaxial cable including a conductor disposed on the guide; and solder that electrically connects the conductor to an image-sensing terminal corresponding to the conductor on the guide.

Abstract: An imaging device includes pixels each including a photoelectric converter that generates charges by photoelectric conversion, a first transfer transistor that transfers charges of the photoelectric converter to a first holding portion, a second transfer transistor that transfers charges of the first holding portion to a second holding portion, and an amplifier unit that outputs a signal based on charges held by the second holding portion. The first transfer transistor is configured to form a potential well for the charges between the photoelectric converter and the first holding portion when the first transistor is in an on-state. The maximum charge amount QPD generated by the photoelectric converter during one exposure period, a saturation charge amount QMEM_SAT of the first holding portion, and the maximum charge amount QGS that can be held in the potential well are in a relationship of: QPD<QGS?QMEM_SAT.

Abstract: Provided are a solid-state electronic imaging device that makes periodic noise invisible and a method for controlling the solid-state electronic imaging device. In a solid-state electronic imaging device in which a plurality of photoelectric conversion elements are arranged, a second ramp wave whose level decreases for a second sampling period from the output of a read pulse for reading signal charge accumulated in the photoelectric conversion elements to the output of a reset pulse for resetting the signal charge accumulated in the photoelectric conversion elements is output. In a case in which the level of the second ramp wave is a second reference level, a second sampling pulse is output and a voltage signal converted from the signal charge is sampled. The sampling interval is non-periodic. Even in a case in which periodic noise has an effect on the solid-state electronic imaging device, it is possible to exclude the periodic noise from an object image obtained by imaging.

Abstract: A semiconductor device includes a substrate including a front side, a back side opposite to the front side, and a high absorption structure disposed over the back side of the substrate and configured to absorb an electromagnetic radiation in a predetermined wavelength; and a dielectric layer including a high dielectric constant (high k) dielectric material, wherein the dielectric layer is disposed on the high absorption structure.

Abstract: A semiconductor device includes: a visible light sensing layer, having a first surface and a second surface opposite to the first surface; an infrared ray sensing layer, having a first surface and a second surface opposite to the first surface, and the first surface of the visible light sensing layer attached to the second surface of the infrared ray sensing layer; and a circuitry layer, having a first surface and a second surface opposite to the first surface, and the first surface of the infrared ray sensing layer attached to the second surface of the circuitry layer.

Abstract: A method for forming an image sensor device is provided. The method includes providing a substrate having a front surface and a back surface. The method includes removing a first portion of the substrate to form a first trench. The method includes forming a first isolation structure in the first trench. The first isolation structure has a top surface. The method includes removing a second portion of the first isolation structure and a third portion of the substrate to form a second trench passing through the first isolation structure and extending into the substrate. The method includes forming a second isolation structure in the second trench. The method includes forming a light-sensing region in the substrate. The method includes removing a fourth portion of the substrate to expose a first bottom portion of the second isolation structure and a backside of the light-sensing region.

Abstract: An image sensor may include an infrared radiation-blocking layer. The infrared radiation-blocking layer may block infrared radiation from reflecting off of metal layers formed beneath pixel structures in the image sensor so that the reflected light does not reach the photodiodes. The infrared radiation-blocking layer may be formed between a backside redistribution layer and an epitaxial silicon layer in which pixel structures such as photodiodes and transistors are formed. The infrared radiation-blocking layer may be formed from a pre-existing metal layer between the backside redistribution layer and the epitaxial silicon layer. The infrared radiation-blocking layer may prevent the image sensor from generating inadvertent photocurrents in response to reflected infrared light.

Abstract: A pixel cell includes a photodiode disposed in an epitaxial layer in a first region of semiconductor material to accumulate image charge. A floating diffusion is disposed in a well region disposed in the epitaxial layer in the first region. A transfer transistor is coupled to selectively transfer the image charge from the photodiode to the floating diffusion. A deep trench isolation (DTI) structure disposed in the semiconductor material. The DTI structure isolates the first region of the semiconductor material on one side of the DTI structure from a second region of the semiconductor material on an other side of the DTI structure. The DTI structure includes a doped semiconductor material disposed inside the DTI structure that is selectively coupled to a readout pulse voltage in response to the transfer transistor selectively transferring the image charge from the photodiode to the floating diffusion.

Abstract: A solid-state imaging device includes a semiconductor layer, a reflector, and a plurality of element separating regions. In the semiconductor layer, a plurality of photoelectric conversion elements is arranged in a two-dimensional array. The reflector covers a surface of the semiconductor layer on a side opposite to a surface of the semiconductor layer on which alight is incident, and reflects the light. The element separating regions are formed in the semiconductor layer to physically and electrically separate the plurality of photoelectric conversion elements. Each of the element separating regions extend from the surface of the semiconductor layer on which the light is incident to the reflector and has a reflection surface for reflecting light.

Abstract: A single photon avalanche diode (SPAD) includes an n doped epitaxial layer disposed in a first semiconductor layer. A p doped epitaxial layer is above the n doped epitaxial layer on a back side of the first semiconductor layer. A multiplication junction is defined at an interface between the n doped epitaxial layer and the p doped epitaxial layer. A multiplication junction is reversed biased above a breakdown voltage such that a photon received through the back side of the first semiconductor layer triggers an avalanche multiplication process in the multiplication junction. A p? doped guard ring region is implanted in the n doped epitaxial layer surrounding the multiplication junction.

Abstract: An image sensor package and method for fabricating the same is provided. The image sensor package includes a first substrate comprising a via therein, a driving circuit and a first conductive pad thereon. A second substrate comprising a photosensitive device and a second conductive pad thereon is bonded to the first substrate, so that the driving circuit, formed on the first substrate, can electrically connect to and further control the photosensitive device, formed on the second substrate. A solder ball is formed on a backside of the first substrate and electrically connects to the via for transmitting a signal from the driving circuit. Because the photosensitive device and the driving circuit are fabricated individually on the different substrates, fabrication and design thereof is more flexible. Moreover, the image sensor package is relatively less thick, thus, the dimensions thereof are reduced.

Abstract: An imaging system includes an array of pixel cells and a plurality of digital memory elements disposed physically separate from and coupled to the array of pixel cells. Each of the pixel cells includes a photodetector, an electrical storage device coupled to the photodetector, and quantization circuitry coupled to the electrical storage device. The photodetector is configured to generate a photo-current in response to light impinging thereon. The electrical storage device is configured to accumulate an electrical charge from the photo-current. The quantization circuitry is configured to convert the electrical charge into an analog quantization event signal. Each of the digital memory elements is in electrical communication with at least one of the pixel cells and is configured to store a digital value in response to receiving the analog quantization event signal from the at least one of the pixel cells.

Abstract: Systems and methods are provided for fabricating a backside illuminated image sensor including an array of pixels. An example image sensor includes a first pixel, a second pixel, and an isolation structure. The first pixel is disposed in a front side of a substrate and is configured to generate charged carriers in response to light incident upon a backside of the substrate. The second pixel is disposed in the front side of the substrate and is configured to generate charged carriers in response to light incident upon the backside of the substrate. The isolation structure is disposed to separate the second pixel from the first pixel, and extends from the backside of the substrate toward the front side of the substrate. The isolation structure includes a sidewall substantially vertically to the front side of the substrate.

Abstract: An image sensor includes a substrate having a front side and a back side, an insulating structure containing circuits on the front side of the substrate, contact holes extending through the substrate to the circuits, respectively, and a plurality of pads disposed on the backside of the substrate, electrically connected to the circuits along conductive paths extending through the contact holes, and located directly over the circuits, respectively. The image sensor is fabricated by a process in which a conductive layer is formed on the back side of the substrate and patterned to form the pads directly over the circuits.

Abstract: A method of forming of an image sensor device includes a substrate having a pixel region and a periphery region. A plurality of first trenches is etched in the periphery region. Each of the first trenches has a depth D1. A mask layer is formed over the substrate. The mask layer has a plurality of openings in the pixel region. A spacer is formed in an interior surface of each opening. A plurality of second trenches is etched through each opening having the spacer in the pixel region. Each of the second trenches has a depth D2. The depth D1 is larger than the depth D2.

Abstract: The present specification discloses front-side contact back-side illuminated (FSC-BSL) photodiode array having improved characteristics such as high speed of each photodiode, uniformity of the bias voltage applied to different photodiode, low bias voltage, reduced resistance of each photodiode, and an associated reduction in noise. The photodiode array is made of photodiodes with front metallic cathode pads, front metallic anode pad, back metallic cathode pads, n+ doped regions and a p+ doped region. The front metallic cathode pads physically contact the n+ doped regions and the front metallic anode pad physically contacts the p+ doped region. The back metallic cathode pads physically contact the n+ doped region.

Abstract: A backside illumination image sensor structure comprises an image sensor formed adjacent to a first side of a semiconductor substrate, wherein an interconnect layer is formed over the first side of the semiconductor substrate, a backside illumination film formed over a second side of the semiconductor substrate, a metal shielding layer formed over the backside illumination film and a via embedded in the backside illumination film and coupled between the metal shielding layer and the semiconductor substrate.

Abstract: A unit pixel of an image sensor is provided. The unit pixel includes a photoelectric conversion element configured to generate photocharge varying with the intensity of incident light, a transfer transistor configured to transfer the photocharge to a floating diffusion in response to a transfer control signal, and a supplemental transistor connected to the floating diffusion. Because the unit pixel includes only one transistor in addition to the transfer transistor, the area of the unit pixel is minimized, and, as a result, the resolution of a pixel array is increased and the power consumption of the pixel array is decreased.

Abstract: In a back-illuminated solid-state image pickup device including a semiconductor substrate 4 having a light incident surface at a back surface side and a charge transfer electrode 2 disposed at a light detection surface at an opposite side of the semiconductor substrate 4 with respect to the light incident surface, the light detection surface has an uneven surface. By the light detection surface having the uneven surface, etaloning is suppressed because lights reflected by the uneven surface have scattered phase differences with respect to a phase of incident light and resulting interfering lights offset each other. A high quality image can thus be acquired by the back-illuminated solid-state image pickup device.

Abstract: An image sensor device includes a semiconductor substrate having a front side and a backside. A first dielectric layer is on the front side of the semiconductor substrate. A metal pad is in the first dielectric layer. A second dielectric layer is over the first dielectric layer and on the front side of the semiconductor substrate. An opening penetrates through the semiconductor substrate from the backside of the semiconductor substrate, wherein the opening includes a first portion extending to expose a portion of the metal pad and a second portion extending to expose a portion of the second dielectric layer. A metal layer is formed in the first portion and the second portion of the opening.

Abstract: A back-side illuminated image sensor formed from a thinned semiconductor substrate, wherein: a transparent conductive electrode, insulated from the substrate by an insulating layer, extends over the entire rear surface of the substrate; and conductive regions, insulated from the substrate by an insulating coating, extend perpendicularly from the front surface of the substrate to the electrode.

Abstract: Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor includes first and second radiation-detection devices that are disposed in the substrate. The first and second radiation-detection devices are operable to detect radiation waves that enter the substrate through the back side. The image sensor also includes an anti-reflective coating (ARC) layer. The ARC layer is disposed over the back side of the substrate. The ARC layer has first and second ridges that are disposed over the first and second radiation-detection devices, respectively. The first and second ridges each have a first refractive index value. The first and second ridges are separated by a substance having a second refractive index value that is less than the first refractive index value.

Abstract: BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectively removing the metal shield from over the sensor array region; selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains during the process of selectively removing the first dielectric layer; forming a second dielectric layer over the remainder of the BARC and over the metal shield; and forming a passivation layer over the second dielectric layer.

Abstract: A solid-state image sensor includes a semiconductor substrate having a photoelectric conversion element converting incident light into a charge and a charge retaining section temporarily retaining the charge photoelectrically converted by the photoelectric conversion element and a light shielding section having an embedded section extending in at least a region between the photoelectric conversion element and the charge retaining section of the semiconductor substrate.

Abstract: A method for forming a back-side illuminated image sensor, including the steps of: a) forming, from the front surface, doped polysilicon regions, of a conductivity type opposite to that of the substrate, extending in depth orthogonally to the front surface and emerging into the first layer; b) thinning the substrate from its rear surface to reach the polysilicon regions, while keeping a strip of the first layer; c) depositing, on the rear surface of the thinned substrate, a doped amorphous silicon layer, of a conductivity type opposite to that of the substrate; and d) annealing at a temperature capable of transforming the amorphous silicon layer into a crystallized layer.

Abstract: Bi-directional camera modules and flip chip bonders including the same are provided. The module includes a circuit board on which an upper sensor and a lower sensor are mounted, an upper lens and a lower lens disposed on the upper sensor and under the lower sensor, respectively, and a housing fixing the upper lens and the lower lens spaced apart from the upper sensor and the lower sensor, respectively. The housing surrounds the circuit board. The housing has a plurality of inlets and an outlet through which air flows, and the housing has an air passage connected from the inlets to the outlet via a space between lower lens and the lower sensor.

Abstract: A device includes a semiconductor substrate having a front side and a backside. A plurality of image sensors is disposed at the front side of the semiconductor substrate. A plurality of clear color-filters is disposed on the backside of the semiconductor substrate. A plurality of metal rings encircles the plurality of clear color-filters.

Abstract: An image sensor includes front-side and backside photodetectors of a first conductivity type disposed in a substrate layer of the first conductivity type. A front-side pinning layer of a second conductivity type is connected to a first contact. The first contact receives a predetermined potential. A backside pinning layer of the second conductivity type is connected to a second contact. The second contact receives an adjustable and programmable potential.

Abstract: A backside illuminated image sensor includes a substrate with a substrate depth, where the substrate includes a pixel region and a peripheral region. The substrate further includes a front surface and a back surface. The backside illuminated image sensor includes a first isolation structure formed in the pixel region of the substrate, where a bottom of the first isolation structure is exposed at the back surface of the substrate. The backside illuminated image sensor includes a second isolation structure formed in the peripheral region of the substrate, where the second isolation structure has a depth less than a depth of the first isolation structure. The backside illuminated image sensor includes an implant region adjacent to at least a portion of sidewalls of each isolation structure in the pixel region.

Abstract: The first face of the pad is situated between the front-side face of the second semiconductor substrate and a hypothetical plane including and being parallel to the front-side face, and a second face of the pad that is a face on the opposite side of the first face is situated between the first face and the front-side face of the second semiconductor substrate, and wherein the second face is connected to the wiring structure so that the pad is electrically connected to the circuit arranged in the front-side face of the second semiconductor substrate via the wiring structure.

Abstract: Disclosed herein is a solid-state imaging element including: a semiconductor layer; a plurality of photoelectric conversion sections arranged within the semiconductor layer; and a pixel separating section disposed in a shape of a same width from a light receiving surface of the semiconductor layer to an opposite surface of the semiconductor layer from the light receiving surface in a position of separating the photoelectric conversion sections from each other for each pixel, the pixel separating section being formed by a material including an impurity.

Abstract: A backside illuminated image sensor has a carbon nanotube transparent conductive coating formed on the backside of the image sensor. In one implementation the carbon nanotube transparent conductive coating acts as a wavelength selective filter to filter out infrared light. In one implementation the carbon nanotube transparent conductive coating has an optical transparency between 50% and 80% for blue and green color bands.

Abstract: A Three-Dimensional Structure (3DS) Memory allows for physical separation of the memory circuits and the control logic circuit onto different layers such that each layer may be separately optimized. One control logic circuit suffices for several memory circuits, reducing cost. Fabrication of 3DS memory involves thinning of the memory circuit to less than 50 ?m in thickness and bonding the circuit to a circuit stack while still in wafer substrate form. Fine-grain high density inter-layer vertical bus connections are used. The 3DS memory manufacturing method enables several performance and physical size efficiencies, and is implemented with established semiconductor processing techniques.

Abstract: A solid-state imaging device includes a light blocking layer formed in an active pixel region of a pixel region on a light incident side so as to surround a photoelectric conversion unit of each pixel and formed in an extending manner to an optical black region, a concave portion formed so as to be surrounded by the light blocking layer in a region corresponding to the photoelectric conversion unit, a first refractive index layer formed on surfaces of the light blocking layer and the concave portion and having a relatively low refractive index, a second refractive index layer formed on the first refractive index layer so as to be buried in the concave portion and having a relatively high refractive index, and an anti-flare layer formed on the first refractive index layer in the optical black region.

Abstract: A purpose of the present invention is to provide a preferable separation structure of wells when a photoelectric conversion unit and a part of a peripheral circuit unit or a pixel circuit are separately formed on separate substrates and electrically connected to each other. To this end, a solid-state imaging device includes a plurality of pixels including a photoelectric conversion unit and a amplification transistor configured to amplify a signal generated by the photoelectric conversion unit; a first substrate on which a plurality of the photoelectric conversion units are disposed; and a second substrate on which a plurality of the amplification transistors are disposed. A well of a first conductivity type provided with a source region and a drain region of the amplification transistor is separated from a well, which is disposed adjacent to the well in at least one direction, of the first conductivity type provided with the source region and the drain region of the amplification transistor.

Abstract: One pixel is divided into a first region including a first light emitting element and a second region including a second light emitting element, wherein the first region emits light in one direction and the second region emits light in the direction opposite to that of the first region. Independently driving the first light emitting element and the second light emitting element allows images to be displayed independently on the surface.

Abstract: A method for manufacturing the semiconductor apparatus includes an anchor process of forming a barrier metal film and carrying out physical etching making use of sputter gas. The anchor process is carried out at the same time on a wire connected to the lower portion of a first aperture serving as a penetration connection hole and a wire connected to the lower portion of a second aperture serving as a connection hole having an aspect ratio different from the aspect ratio of the penetration connection hole. The first and second apertures are apertures created on a semiconductor substrate obtained by bonding first and second semiconductor substrates to each other. The present technology can be applied to the semiconductor apparatus such as a solid-state imaging apparatus.