Abstract: A semiconductor photodetector device (PD1) comprises a multilayer structure (LS1) and a glass substrate (1) optically transparent to incident light. The multilayer structure includes an etching stop layer (2), an n-type high-concentration carrier layer (3), an n-type light-absorbing layer (5), and an n-type cap layer (7) which are laminated. A photodetecting region (9) is formed near a first main face (101) of the multilayer structure, whereas a first electrode (21) is provided on the first main face. A second electrode (27) and a third electrode (31) are provided on a second main face (102). A film (10) covering the photodetecting region and first electrode is formed on the first main face. A glass substrate (1) is secured to the front face (10a) of this film.

Abstract: A back-illuminated image sensor includes a sensor layer of a first conductivity type having a frontside and a backside opposite the frontside. One or more frontside regions of a second conductivity type are formed in at least a portion of the frontside of the sensor layer. A backside region of the second conductivity type is formed in the backside of the sensor layer. A plurality of frontside photodetectors of the first conductivity type is disposed in the sensor layer. A distinct plurality of backside photodetectors of the first conductivity type separate from the plurality of frontside photodetectors are formed in the sensor layer contiguous to portions of the region of the second conductivity type. A voltage terminal is disposed on the frontside of the sensor layer. One or more connecting regions of the second conductivity type are disposed in respective portions of the sensor layer between the voltage terminal and the backside region for electrically connecting the voltage terminal to the backside region.

Abstract: A back-illuminated image sensor includes a sensor layer of a first conductivity type having a frontside and a backside opposite the frontside. One or more regions of a second conductivity type are formed in at least a portion of the sensor layer adjacent to the frontside. The one or more regions are connected to a voltage terminal for biasing these regions to a predetermined voltage. A backside well of the second conductivity type is formed in the sensor layer adjacent to the backside. The backside well is electrically connected to another voltage terminal for biasing the backside well at a second predetermined voltage that is different from the first predetermined voltage.

Abstract: A back-illuminated image sensor includes a sensor layer of a first conductivity type having a frontside and a backside opposite the frontside. An insulating layer is disposed over the backside. A circuit layer is formed adjacent to the frontside such that the sensor layer is positioned between the circuit layer and the insulating layer. One or more frontside regions of a second conductivity type are formed in at least a portion of the frontside of the sensor layer. A backside region of the second conductivity type is formed in the backside of the sensor layer. A plurality of frontside photodetectors of the first conductivity type is disposed in the sensor layer. A distinct plurality of backside photodetectors of the first conductivity type separate from the plurality of frontside photodetectors is formed in the sensor layer contiguous to portions of the backside region of the second conductivity type.

Abstract: A back-illuminated image sensor includes a sensor layer of a first conductivity type having a frontside and a backside opposite the frontside. One or more frontside regions of the first conductivity type are formed in at least a portion of the frontside of the sensor layer. A backside region of the first conductivity type is formed in the backside of the sensor layer. A plurality of frontside photodetectors of a second conductivity type is disposed in the sensor layer adjacent to the frontside of the sensor layer. A distinct plurality of backside photodetectors of the second conductivity type separate from the plurality of frontside photodetectors are formed in the sensor layer contiguous to the backside region. One or more or more channel regions of the second conductivity type are disposed in respective portions of the sensor layer between the frontside photodetector and the backside photodetector in each photodetector pair.

Abstract: Back-illuminated image sensors include one or more contact implant regions disposed adjacent to a backside of a sensor layer. An electrically conductive material, including, but not limited to, a conductive lightshield, is disposed over the backside of the sensor layer. A backside well is formed in the sensor layer adjacent to the backside, and an insulating layer is disposed over the surface of the backside. Contacts formed in the insulating layer electrically connect the electrically conducting material to respective contact implant regions. At least a portion of the contact implant regions are arranged in a shape that corresponds to one or more pixel edges.

Abstract: A backside illuminated image sensor comprises a sensor layer having a plurality of photosensitive elements of a pixel array, an oxide layer adjacent a backside surface of the sensor layer, and at least one dielectric layer adjacent a frontside surface of the sensor layer. A color filter array is formed on a backside surface of the oxide layer, and a transparent cover is attached to the backside surface of the oxide layer overlying the color filter array. Redistribution metal conductors are in electrical contact with respective bond pad conductors through respective openings in the dielectric layer. A redistribution passivation layer is formed over the redistribution metal conductors, and contact metallizations are in electrical contact with respective ones of the respective redistribution metal conductors through respective openings in the redistribution passivation layer. The image sensor may be implemented in a digital camera or other type of digital imaging device.

Abstract: The present invention provides a solid-state image pickup device including an image pickup pixel section which is provided on a semiconductor substrate and in which a plurality of pixels each having a photoelectric conversion element and a field-effect transistor are arranged, and a peripheral circuit section for the image pickup pixel section. An interconnect layer driving the field-effect transistor in the image pickup pixel section is formed on a first surface side of the semiconductor substrate. A light receiving surface of the photoelectric conversion element is located on a second surface side of the semiconductor substrate. The solid-state image pickup device includes a first terminal exposed from the second surface side of the semiconductor substrate, and a second terminal electrically connected to the first terminal and connectable to an external device on the first surface side of the semiconductor substrate.

Abstract: A solid-state imaging device in which a first conductive type epitaxial layer is formed on its first surface with an interconnection layer and light is received at a second surface of said epitaxial layer, the solid-state imaging device including: (a) a second conductive type region formed in said epitaxial layer with a first impurity concentration and storing a charge generated by a photoelectrical conversion, and (b) a first conductive type impurity layer formed closer to said second surface side of said epitaxial layer than said second conductive type region and having a second impurity concentration higher than the first impurity concentration; wherein the second impurity concentration has a concentration gradient increasing toward the second surface side.

Abstract: A back-illuminated image sensor includes a sensor layer having a frontside and a backside opposite the frontside. An insulating layer is situated adjacent the backside and a circuit layer is adjacent the frontside. A plurality of photodetectors of a first type conductivity convert light incident on the backside into photo-generated charges. The photodetectors are disposed in the sensor layer adjacent the frontside. A region of a second type conductivity is formed in at least a portion of the sensor layer adjacent the frontside and is connected to a voltage terminal for biasing the second type conductivity region at a predetermined voltage. A well of the second type conductivity is formed in the sensor layer adjacent the backside. Trench isolations in the sensor layer start at the frontside and extend beyond the depletion region of the photodiodes.

Abstract: Gray tone lithography is used to form curved silicon topographies for semiconductor based solid-state imaging devices. The imagers are curved to a specific curvature and shaped directly for the specific application; such as curved focal planes. The curvature of the backside is independent from the front surface, which allows thinning of the detector using standard semiconductor processing.

Abstract: A back-illuminated type solid-state image pickup device (1041) includes read circuits (Tr1, Tr2) formed on one surface of a semiconductor substrate (1042) to read a signal from a photo-electric conversion element (PD) formed on the semiconductor substrate (1042), in which electric charges (e) generated in a photo-electric conversion region (1052c1) formed under at least one portion of the read circuits (Tr1, Tr2) are collected to an electric charge accumulation region (1052a) formed on one surface side of the semiconductor substrate (1042) of the photo-electric conversion element (PD) by electric field formed within the photo-electric conversion element (PD). Thus, the solid-state image pickup device and the camera are able to make the size of pixel become very small without lowering a saturation electric charge amount (Qs) and sensitivity.

Abstract: A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.

Abstract: A method is provided for growing a back surface contact on an imaging detector used in conjunction with back illumination. In operation, an imaging detector is provided. Additionally, a back surface contact (e.g. a delta-doped layer, etc.) is grown on the imaging detector utilizing a process that is performed at a temperature less than 450 degrees Celsius.

Abstract: A semiconductor image sensor device includes first and second semiconductor substrates. A pixel array and a control circuit are formed in a first surface of the first substrate. An interconnect layer is formed over the first surface of the first substrate and electrically connects the control circuit to the pixel array. A top conducting layer is formed over the interconnect layer to have electrical connectivity with at least one of the control circuit or the pixel array via the interconnect layer. A surface of a second substrate is bonded to the top conducting layer. A conductive through-silicon-via (TSV) passes through the second substrate, and has electrical connectivity with the top conducting layer. A terminal is formed on an opposite surface of the second substrate, and electrically connected to the TSV.

Abstract: The present specification discloses front-side contact back-side illuminated (FSC-BSL) photodiode array having improved characteristics such as high speed of each photodiode, uniformity of the bias voltage applied to different photodiode, low bias voltage, reduced resistance of each photodiode, and an associated reduction in noise. The photodiode array is made of photodiodes with front metallic cathode pads, front metallic anode pad, back metallic cathode pads, n+ doped regions and a p+ doped region. The front metallic cathode pads physically contact the n+ doped regions and the front metallic anode pad physically contacts the p+ doped region. The back metallic cathode pads physically contact the n+ doped region.

Abstract: Realization of an adequate hole accumulation layer and reduction in dark current are allowed to become mutually compatible. A solid-state imaging device 1 having a light-receiving portion 12 to photoelectrically convert incident light is characterized by including a film 21, which is disposed on a light-receiving surface 12s of the above-described light-receiving portion 12 and which lowers an interface state, and a film 22, which is disposed on the above-described film 21 to lower the interface state and which has a negative fixed charge, wherein a hole accumulation layer 23 is disposed on the light-receiving surface 12s side of the light-receiving portion 12.

Abstract: An image sensor includes at least one photoelectric conversion device formed in a silicon substrate, at least one lens formed on one side of the photoelectric conversion device and configured to collect light, a dielectric layer formed on the other side of the photoelectric conversion device and a reflective pattern formed on the dielectric layer. The reflective pattern serves as an electrical circuit interconnection and is configured to reflect the light passing through the dielectric layer such that the light is absorbed to the silicon substrate again.

Abstract: A semiconductor device includes a semiconductor substrate, a back side drawn electrode formed by embedding a first conductive material in a contact hole penetrating the semiconductor substrate through an insulating film formed to include a uniform thickness, used also as an alignment mark, and configured to draw out an electrode to the back side of the semiconductor substrate. The device further includes a pad provided on the back side of the semiconductor substrate, and connected to the back side drawn electrode.

Abstract: A semiconductor wafer includes one or more back-illuminated image sensors each formed in a portion of the semiconductor wafer. One or more thinning etch stops are formed in other portions of the semiconductor wafer.

Abstract: A back-illuminated image sensor includes a sensor layer having a frontside and a backside opposite the frontside. An insulating layer is situated adjacent the backside and a circuit layer is adjacent the frontside. A plurality of photodetectors of a first type conductivity convert light incident on the backside into photo-generated charges. The photodetectors are disposed in the sensor layer adjacent the frontside. A region of a second type conductivity is formed in at least a portion of the sensor layer adjacent the frontside and is connected to a voltage terminal for biasing the second type conductivity region at a predetermined voltage. A well of the second type conductivity is formed in the sensor layer adjacent the backside. Trench isolations in the sensor layer start at the frontside and extend beyond the depletion region of the photodiodes.

Abstract: A CMOS image sensor and a method for manufacturing the same improve light-receiving efficiency and maintain a margin in the design of a metal line. The CMOS image sensor includes a transparent substrate including an active area having a photodiode region and a transistor region and a field area for isolation of the active area, a p-type semiconductor layer on the transparent substrate, a photodiode in the p-type semiconductor layer corresponding to the photodiode region, and a plurality of transistors in the p-type semiconductor layer corresponding to the transistor region.

Abstract: To provide a solid-state imaging device able to improve light transmittance of a transparent insulation film in a light incident side of a substrate, suppress the dark current, and prevent quantum efficiency loss, wherein a pixel circuit is formed in a first surface of the substrate and light is received from a second surface, and it has: a light receiving unit formed in the substrate and for generating a signal charge corresponding to an amount of incidence light and storing it; a transparent first insulation film formed on the second surface; and a transparent second insulation film formed on the first insulation film and for retaining a charge having the same polarity as the signal charge in an interface of the first insulation film or in inside, and when the thicknesses of the first and second insulation films are determined to obtain a transmittance higher than when using only the first insulation film.

Abstract: In an example embodiment, the backside-illuminated image sensor includes a substrate including a plurality of photoelectric conversion devices being separated by a semiconductor. The backside-illuminated sensor further includes a transparent electrode layer or a metal layer formed on a surface of a substrate. As a positive bias voltage or a negative bias voltage is applied to the transparent electrode layer or the metal layer, generation of dark current in the surface of the silicon substrate may be reduced or suppressed.

Abstract: The images sensor includes a readout circuit capacitatively coupled to a memory circuit. The readout circuit includes: (i) a photon detector to receive a plurality of photons and to provide a charge signal corresponding to the received photons, (ii) a resettable integrator that is reset multiple times over a single exposure time and provides an analog representation of the incident photons during the last integration cycle, and (iii) a comparator that monitors the integrator output and generates a reset pulse when the integrator reaches a built-in threshold value. The memory circuit includes: (i) a receiver circuit that detects the output of the digital driver in the front-end readout circuit via capacitive coupling and generates a digital voltage pulse for each received signal, and (ii) a digital counting memory to count the received pulses to provide a coarse digital representation of how many times the integrator is reset.

Abstract: An image sensor includes a plurality of wells for isolating a plurality of photodiodes from each other. Each of the wells includes a P-type well region and an N-type well region configured to receive a positive bias voltage. The image sensor provides a clearer image by suppressing a blooming effect and a dark current.

Abstract: A back-illuminated type solid-state imaging device is provided in which an electric field to collect a signal charge (an electron, a hole and the like, for example) is reliably generated to reduce a crosstalk. The back-illuminated type solid-state imaging device includes a structure 34 having a semiconductor film 33 on a semiconductor substrate 31 through an insulation film 32, in which a photoelectric conversion element PD that constitutes a pixel is formed in the semiconductor substrate 31, at least part of transistors 15, 16, and 19 that constitute the pixel is formed in the semiconductor film 33, and a rear surface electrode 51 to which a voltage is applied is formed on the rear surface side of the semiconductor substrate 31.

Abstract: A solid state imaging device having a back-illuminated type structure in which a lens is formed on the back side of a silicon layer with a light-receiving sensor portion being formed thereon. Insulating layers are buried into the silicon layer around an image pickup region, with the insulating layer being buried around a contact layer that connects an electrode layer of a pad portion and an interconnection layer of the surface side. A method of manufacturing such a solid-state imaging device is also provided.

Abstract: A photoelectric conversion device is provided which is capable of improving the light condensation efficiency without substantially decreasing the sensitivity. The photoelectric conversion device has a first pattern provided above an element isolation region formed between adjacent two photoelectric conversion elements, a second pattern provided above the element isolation region and above the first pattern, and microlenses provided above the photoelectric conversion elements with the first and the second patterns provided therebetween. The photoelectric conversion device further has convex-shaped interlayer lenses in optical paths between the photoelectric conversion elements and the microlenses, the peak of each convex shape projecting in the direction from the electro-optical element to the microlens.

Abstract: A backside imaging device includes a bump that is disposed overlapping with a sensor array region or a photodiode in a planar view. By this configuration, the bump becomes a support, and the semiconductor substrate is prevented from being damaged because of a bending applied to the semiconductor substrate.

Abstract: In a rear surface incidence type CMOS image sensor having a wiring layer 720 on a first surface (front surface) of an epitaxial substrate 710 in which a photodiode, a reading circuit (an n-type region 750 and an n+ type region 760) and the like are disposed, and a light receiving plane in a second surface (rear surface), the photodiode and a P-type well region 740 on the periphery of the photodiode are disposed in a layer structure that does not reach the rear surface (light receiving surface) of the substrate, and an electric field is formed within the substrate 710 to properly lead electrons entering from the rear surface (light receiving surface) of the substrate to the photodiode. The electric field is realized by providing a concentration gradient in a direction of depth of the epitaxial substrate 710. Alternatively, the electric field can be realized by providing a rear-surface electrode 810 or 840 for sending a current.

Abstract: An image sensor including photosensitive cells including photodiodes and at least one additional circuit with a significant heat dissipation including transistors. The image sensor is made in monolithic form and includes a layer of a semiconductor material having first and second opposite surfaces and including, on the first surface side, first regions corresponding to the power terminals of the transistors, the lighting of the image sensor being intended to be performed on the second surface side; a stack of insulating layers covering the first surface; a thermally conductive reinforcement covering the stack on the side opposite to the layer; and thermally conductive vias connecting the layer to the reinforcement.

Abstract: Disclosed herein is a solid-state imaging element which includes a plurality of drive signal inputs, a plurality of bus lines, and a plurality of vertical transfer register electrodes. In the solid-state imaging element, a charge accumulated in light-receiving elements in a pixel region is vertically transferred by the drive signals input to the electrodes. Each of the electrodes has a contact part connected to the second contact and having a width smaller than a width of the electrodes in the pixel region, and a blank region is formed between predetermined adjacent two of the contact parts so that a width of the blank region is larger than a distance between respective two of the contact parts other than the predetermined adjacent two of the contact parts. The first contact is disposed on the blank region.

Abstract: A package of a semiconductor device with a flexible wiring substrate and a method thereof are provided. The package of the semiconductor device includes a semiconductor substrate with at least one pad on a surface thereof, a bump bonded to the pad, an adhesive layer on the bump, and a flexible wiring substrate having at least one contact section being electrically connected with the bump by the adhesive layer. The present invention makes the flexible wiring substrate directly conductively attached onto the semiconductor substrate. The package size is shrunk and the cost down can be obtained.

Abstract: A wafer for backside illumination type solid imaging device has a plurality of pixels inclusive of a photoelectric conversion device and a charge transfer transistor at its front surface side and a light receiving surface at its back surface side, wherein said wafer is a SOI wafer obtained by forming a given active layer on a support substrate made of C-containing n-type semiconductor material through a chemical oxide film having a thickness of not more than 1 nm.

Abstract: The present invention is a front-side contact, back-side illuminated (FSC-BSL) photodiode arrays and front-side illuminated, back-side contact (FSL-BSC) photodiode arrays having improved characteristics, including high production throughput, low-cost manufacturing via implementation of batch processing techniques; uniform, as well as high, photocurrent density owing to presence of a large continuous homogeneous, heavily doped layer; and back to front intrachip connections via the homogenous, heavily doped layers on the front and back sides of the substrate.

Abstract: A backside illuminated image sensor comprises a sensor layer implementing a plurality of photosensitive elements of a pixel array, and an oxide layer adjacent a backside surface of the sensor layer. The sensor layer comprises a seed layer and an epitaxial layer formed over the seed layer, with the seed layer having a cross-sectional doping profile in which a designated dopant is substantially confined to a pixel array area of the sensor layer. The doping profile advantageously reduces dark current generated at an interface between the sensor layer and the oxide layer. The image sensor may be implemented in a digital camera or other type of digital imaging device.

Abstract: A photodiode array 1 is provided with an n-type silicon substrate 3. A plurality of photodiodes 4 are formed in array on the opposite surface side to an incident surface of light L to be detected, in the n-type silicon substrate 3. A resin film 6 for transmitting the light L to be detected is provided so as to cover at least regions corresponding to regions where the photodiodes 4 are formed, on the incident surface side of the light L to be detected, in the n-type silicon substrate 3.

Abstract: A backside illuminated image sensor has a carbon nanotube transparent conductive coating formed on the backside of the image sensor. In one implementation the carbon nanotube transparent conductive coating acts as a wavelength selective filter to filter out infrared light. In one implementation the carbon nanotube transparent conductive coating has an optical transparency between 50% and 80% for blue and green color bands.

Abstract: A structure for implementation of back-illuminated CMOS or CCD imagers. An epitaxial silicon layer is connected with a passivation layer, acting as a junction anode. The epitaxial silicon layer converts light passing through the passivation layer and collected by the imaging structure to photoelectrons. A semiconductor well is also provided, located opposite the passivation layer with respect to the epitaxial silicon layer, acting as a junction cathode. Prior to detection, light does not pass through a dielectric separating interconnection metal layers.

Abstract: With this semiconductor device, the distortion and cracking of a thinned portion of a semiconductor substrate are prevented to enable high precision focusing with respect to a photodetecting unit and uniformity and stability of high sensitivity of the photodetecting unit to be maintained. A semiconductor device 1 has a semiconductor substrate 10, a wiring substrate 20, conductive bumps 30, and a resin 32. A CCD 12 and a thinned portion 14 are formed on semiconductor substrate 10. Electrodes 16 of semiconductor substrate 10 are connected via conductive bumps 30 to electrodes 22 of wiring substrate 20. Wiring substrate 20 has formed therein a groove portion 26a that surrounds a region opposing thinned portion 14 and groove portions 26b that extend to an exposed surface of wiring substrate 20 from groove portion 26a. Insulating resin 32 fills a gap between outer edge 15 of thinned portion 14 and wiring substrate 20 to reinforce the bonding strengths of conductive bumps 30.

Abstract: A method of forming a mask for lithography includes the step of forming the mask by using reverse data in which positions of at least part of output terminals are reversed, when forming the mask for lithography used for manufacturing a back-illuminated solid-state imaging device which takes incident light from the side of a surface opposite to the side of a surface on which wiring of a device region in which photoelectric conversion elements are formed is formed.

Abstract: An imaging sensor with an array of FET pixels and method of forming the imaging sensor. Each pixel is a semiconductor island, e.g., N-type silicon on a Silicon on insulator (SOI) wafer. FETs are formed in one photodiode electrode, e.g., a P-well cathode. A color filter may be attached to an opposite surface of island. A protective layer (e.g., glass or quartz) or window is fixed to the pixel array at the color filters. The image sensor may be illuminated from the backside with cell wiring above the cell. So, an optical signal passes through the protective layer is filtered by the color filters and selectively sensed by a corresponding photo-sensor.

Abstract: A bonded-wafer semiconductor device includes a semiconductor substrate, a buried oxide layer disposed on a first main surface of the semiconductor substrate and a multi-layer device stack. The multi-layer device stack includes a first device layer of a first conductivity disposed on the buried oxide layer, a second device layer of a second conductivity disposed on the first device layer, a third device layer of the first conductivity disposed on the second device layer and a fourth device layer of the second conductivity disposed on the third device layer. A trench is formed in the multi-layer device stack. A mesa is defined by the trench. The mesa has first and second sidewalls. A first anode/cathode layer is disposed on a first sidewall of the multi-layer device stack, and a second anode/cathode layer is disposed on the second sidewall of the multi-layer device stack.

Abstract: A backlit photodiode array includes a semiconductor substrate having first and second main surfaces opposite to each other. A first dielectric layer is formed on the first main surface. First and second conductive vias are formed extending from the second main surface through the semiconductor substrate and the first dielectric layer. The first and second conductive vias are isolated from the semiconductor substrate by a second dielectric material. A first anode/cathode layer of a first conductivity is formed on the first dielectric layer and is electrically coupled to the first conductive via. An intrinsic semiconductor layer is formed on the first anode/cathode layer. A second anode/cathode layer of a second conductivity opposite to the first conductivity is formed on the intrinsic semiconductor layer and is electrically coupled to the second conductive via.

Abstract: A backside illuminated (“BSI”) imaging sensor pixel includes a photodiode region and pixel circuitry. The photodiode region is disposed within a semiconductor die for accumulating an image charge in response to light incident upon a backside of the BSI imaging sensor pixel. The pixel circuitry includes transistor pixel circuitry disposed within the semiconductor die between a frontside of the semiconductor die and the photodiode region. At least a portion of the pixel circuitry overlaps the photodiode region.

Abstract: A solid-state imaging device includes a semiconductor substrate, photodetector elements, and blocking layers. The solid-state imaging device receives light on the back surface, and photoelectrically converts light incident upon the back surface of the semiconductor substrate, thereby acquiring an image of an object to be imaged. The photodetector elements receive the signal charge generated through the photoelectric conversion. Between a region in the semiconductor substrate where the photodetector elements are provided and the back surface, the blocking layers are provided. The blocking layers suppress diffusion of the signal charge.

Abstract: A photodetection device is provided that includes a semiconductor substrate having a back surface which serves as a light-incident surface, and a front surface which opposes the back surface and is provided with a CCD reading part that detects light propagating from the back surface; a cooling device cooling the CCD reading part; and a package having a cavity that houses the semiconductor substrate and cooling device. The semiconductor substrate is fixed to a cavity bottom part of the package via the cooling device, and at the back surface thereof, a portion corresponding to a region at which the CCD reading part is disposed, is made thin. The cooling device has a cooling surface contacting the front surface of the semiconductor substrate while covering the region at which the CCD reading part is disposed.

Abstract: A CMOS image sensor includes a plurality of pixel regions formed under a front surface of a substrate, and having photodiodes separated from each other by a field oxide, a multi-layered metal interconnection formed over the pixel regions of the front of the substrate, a bump connected to an uppermost metal interconnection of the multi-layered metal interconnection, a plurality of trenches formed in a backside of the substrate, wherein the trenches have different depths for each wavelength of light, and correspond to the respective pixel regions, and a glass covering the backside of the substrate.

Abstract: A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.