Abstract: A clock calibration method and an electronic device, for calibrating a clock of a fingerprint chip, which can improve an accuracy of the clock of the fingerprint chip, thereby improving performance of the fingerprint chip. The clock calibration method, for calibrating a clock of a fingerprint chip provided in an electronic device, includes: sending a configuration command to the fingerprint chip to cause the fingerprint chip to map a current clock of the fingerprint chip to a target pin of the fingerprint chip; detecting the target pin to acquire the current clock of the fingerprint chip; determining a calibration value based on a target clock and the current clock of the fingerprint chip; and sending the calibration value to a calibration register in the fingerprint chip, the calibration value being used to adjust the current clock of the fingerprint chip.

Abstract: An imaging apparatus includes a plurality of imaging elements, at least one signal processing circuit, and a transfer path, in which each of the plurality of imaging elements includes a memory that is incorporated in the imaging element and stores image data obtained by imaging a subject, and a communication interface that is incorporated in the imaging element and outputs output image data based on the image data stored in the memory, the transfer path connects the plurality of imaging elements and a single signal processing circuit in series, and the communication interface of each of the plurality of imaging elements outputs the output image data to an imaging element in a rear stage or the signal processing circuit through the transfer path.

Abstract: In a semiconductor package in which a semiconductor element is connected to a substrate, the semiconductor element is prevented from being warped. The semiconductor package includes a substrate, the semiconductor element, a bonding portion, and protrusions. First ends of wires are connected to a front surface of the substrate. Second ends of wires are connected to one surface of opposite surfaces of the semiconductor element. The bonding portion bonds a part of the other surface of the opposite surfaces of the semiconductor element and the front surface of the substrate. The protrusions protrude from the front surface of the substrate to a remaining part of the other surface of the opposite surfaces of the semiconductor element.

Abstract: An image sensing device may include: one or more first unit pixels structured to generate a pixel signal by converting light incident through a first color filter; a plurality of second unit pixels positioned adjacent to the first unit pixel, and structured to generate a pixel signal by converting light incident through a second color filter; a first grid including a light absorption layer positioned between the first and second color filters; and a second grid including a light reflecting layer positioned between adjacent second color filters.

Abstract: An image sensor includes a substrate including a first surface, a second surface opposite to the first surface, and unit pixels, a deep device isolation portion disposed in the substrate to isolate the unit pixels from each other, and a transfer gate disposed on the first surface and in each of the unit pixels. The deep device isolation portion includes a first conductive pattern extending from the first surface toward the second surface, a first insulating pattern interposed between the first conductive pattern and the substrate, a second conductive pattern extending from the second surface toward the first conductive pattern, and a first fixed charge layer interposed between the second conductive pattern and the substrate.

Abstract: A display device includes PWM data lines to receive PWM data voltages, first to third data lines to receive corresponding data voltages from among first to third data voltages, sweep signal lines to receive sweep signals, and a sub-pixel connected to a PWM data line from among the PWM data lines, a data line from among the first to third data lines, and a sweep signal line from among the sweep signal lines, and includes at least one light emitting element. The sub-pixel may include a first transistor, a first capacitor electrode connected to a gate electrode of the first transistor, and a second capacitor electrode connected to the sweep signal line, and overlapping the first capacitor electrode in a thickness direction of the display device. The second capacitor electrode does not overlap a source electrode and a drain electrode of the first transistor in the thickness direction.

Abstract: The present technology relates to a light receiving device that includes a pixel array unit in which pixels each having a first tap detecting charge photoelectrically converted by a photoelectric conversion unit and a second tap detecting charge photoelectrically converted by the photoelectric conversion unit are two-dimensionally arranged in a matrix. In the pixel array unit, four vertical signal lines for outputting a detection signal detected by any one of the first tap and the second tap to the outside of the pixel array unit are arranged for one pixel column.

Abstract: The invention concerns a hybrid multispectral device comprising a substrate having a first surface and a second surface, at least one first functional element having a first functional layer operable to detect or emit light of a first wavelength range, and at least one second functional element having a second functional layer operable to detect or emit light of a second wavelength range different from the first wavelength range. The first functional element is arranged on the first surface of the substrate, while the second functional element is arranged on the second surface of the substrate. The first functional element is arranged in a first lateral region of the multispectral device, and the second functional element is arranged in a second lateral region of the multispectral device.

Abstract: A light-emitting display device includes at least a transparent substrate, a first patterned conductive layer and a second patterned conductive layer respectively disposed on top of the opposite first and second surfaces of the transparent substrate, and a plurality of inorganic electroluminescent objects disposed in form of an array on top of the first surface of the transparent substrate with the inorganic electroluminescent objects being spaced from one another in a distance of at least 2 mm. Each of the inorganic electroluminescent objects has one power pin and light signal pins for red light, green light, and blue light. The transparent substrate has a plurality of through holes between the first surface and the second surface. The first patterned conductive layer has a plurality of soldering pad regions respectively in connection with the power pin and the light signal pins.

Abstract: The radiation detection element comprising a semiconductor part having a plate shape, a first electrode that is disposed on a first surface being one surface of the semiconductor part and that collects charges generated by incidence of radiation in the semiconductor part, a second electrode that is disposed on a second surface being the other surface of the semiconductor part and that is applied with voltage needed for collecting the charges, and a heavily-doped layer that is disposed at a region of the second surface excluding an edge of the semiconductor part and is doped heavier than the semiconductor part with dopants for making a type of a semiconductor equal to that of the semiconductor part. The heavily-doped layer is on the second surface located at a position overlapped with the second electrode and is thicker than the second electrode.

Abstract: A camera system of a mobile device includes: a sensor module disposed in a first body connected to a rotation member of the mobile device; and a lens module disposed in a second body connected to the rotation member. When the first body and the second body are rotated with respect to the rotation member to overlap each other, optical axes of the sensor module and the lens module correspond to each other and are operated as a common camera system, and the common camera system provides a first photographing mode and a second photographing mode with different viewing angles based on two focuses generated by a first geometry phase lens included in the lens module.

Abstract: An imaging device according to an embodiment of the present disclosure includes: a first semiconductor substrate (100) provided with pixels including a photoelectric conversion element (PD) and floating diffusion (FD) that temporarily holds a charge output from the photoelectric conversion element (PD); and a semiconductor layer (200Y) provided on the first semiconductor substrate (100) via an insulating film (123), the semiconductor layer (200Y) including a readout circuit unit (539) that reads out the charge held in the floating diffusion (FD) and outputs a pixel signal, in which the semiconductor layer (200Y) is formed of an organic semiconductor material.

Abstract: An integrated circuit includes a photodetection region configured to receive incident photons. The photodetection region is configured to produce a plurality of charge carriers in response to the incident photons. The integrated circuit includes at least one charge carrier storage region. The integrated circuit also includes a charge carrier segregation structure configured to selectively direct charge carriers of the plurality of charge carriers directly into the at least one charge carrier storage region based upon times at which the charge carriers are produced.

Abstract: In an embodiment an adhesive transfer stamp for transferring semiconductor chips includes a volume region including an electrically insulating material, at least one adhesive surface configured to receive a semiconductor chip and an electrically conductive element configured to electrically conductively connected to a ground conductor during operation and to dissipate electrical charges from the semiconductor chip to the ground conductor, wherein the volume region is embodied as a solid body, and wherein the volume region has at least one stepped structure.

Abstract: The present disclosure relates to a solid-state imaging device that can achieve a high S/N ratio at a high sensitivity level without any decrease in resolution, and to an electronic apparatus. In the upper layer, the respective pixels of a photoelectric conversion unit that absorbs light of a first wavelength are tilted at approximately 45 degrees with respect to a square pixel array, and are two-dimensionally arranged in horizontal directions and vertical directions in an oblique array. The respective pixels of a photoelectric conversion unit that is sensitive to light of a second or third wavelength are arranged under the first photoelectric conversion unit. That is, pixels that are ?{square root over (2)} times as large in size (twice as large in area) and are rotated 45 degrees are arranged in an oblique array. The present disclosure can be applied to solid-state imaging devices that are used in imaging apparatuses, for example.

Abstract: An apparatus includes a display, a memory, a light sensor array and a light source array. The light source array emits light to display an image on the display. A controller is configured to receive a sensor output from each light sensor in the light sensor array. An ambient-light illuminance difference between a first illuminance of a first ambient light externally directed onto a first region of the displayed image of the display and a second illuminance of a second ambient light externally directed respectively onto a second region of the displayed image of the display is computed. Light source controls of light sources of the light source array are varied to change a luminous emittance of the light source array within the at least one second region of the displayed image so as to reduce a luminance difference between the first region and the second region of the displayed image.

Abstract: In a described example, a device includes: a semiconductor substrate; a memory array on the semiconductor substrate, the memory array comprising rows and columns of memory cells in a Manhattan pattern, the memory cells having a pitch in a direction along the columns; and an array of micromirrors in a diamond pattern over the memory cells, the micromirrors coupled to corresponding memory cells, the micromirrors having a diagonal pitch length in the direction along the columns that is between 1.8 times the pitch and 2.2 times the pitch.

Abstract: An optical device may drive a compensation section of a multi-section optical load to emit a compensation optical pulse by providing, for a first time interval, a compensation electrical pulse to the compensation section. The optical device may drive a main section of the multi-section optical load to emit a main optical pulse by generating, for a second time interval, a main electrical pulse, wherein at least a portion of the first time interval overlaps with the second time interval. The optical device may emit a combined optical pulse, wherein the combined optical pulse includes the compensation optical pulse and the main optical pulse, and wherein the combined optical pulse has a shorter rise time than the main optical pulse.

Abstract: The present disclosure provides a light sensing unit, a gallium nitride (GaN)-based image sensor, and a display apparatus thereof. The light sensing unit includes: red, green, and blue light sensing sub-units, where materials of a light sensing layer of each of the light sensing sub-units are GaN-based materials containing indium(In). The materials of the light sensing layers may contain different contents of In, such that the light sensing sub-units are enabled to generate or not generate light sensing electrical signals according to different wave lengths of received light. During a GaN-based material growth process, the contents of In in different regions are controlled to prepare the light sensing sub-units at the same time to increase integration degrees of the light sensing unit, the GaN-based image sensor, and the display apparatus containing the light sensing unit to achieve miniaturization.

Abstract: The present disclosure concerns a photodiode including at least one memory area, each memory area including at least two charge storage regions.

Abstract: There is provided a semiconductor device in which the inter-wiring capacitance of wiring lines provided in any layout is further reduced. A semiconductor device that includes a first inter-wiring insulating layer that is provided on a substrate and includes a recess on a side opposite to the substrate, a first wiring layer that is provided inside the recess in the first inter-wiring insulating layer, a sealing film that is provided along an uneven shape of the first wiring layer and the first inter-wiring insulating layer, a second inter-wiring insulating layer that is provided on the first inter-wiring insulating layer to cover the recess, and a gap that is provided between the second inter-wiring insulating layer and the first wiring layer and the first inter-wiring insulating layer. The second inter-wiring insulating layer has a planarized surface that is opposed to the recess.

Abstract: A sensor chip includes: a pixel array unit that has a rectangular-shaped area in which a plurality of sensor elements are arranged in an array pattern; and a global control circuit, in which driving elements simultaneously driving the sensor elements are arranged in one direction, and each of the driving elements is connected to a control line disposed for each one column of the sensor elements, that is arranged to have a longitudinal direction to be along a long side of the pixel array unit. For example, the present technology can be applied to ToF sensor.

Abstract: A solid state image sensor of the present disclosure includes: a first semiconductor substrate provided with at least a pixel array unit in which pixels that perform photoelectric conversion are arranged in a matrix form; and a second semiconductor substrate provided with at least a control circuit unit that drives the pixels. The first semiconductor substrate and the second semiconductor substrate are stacked, with first surfaces on which wiring layers are formed facing each other, the pixel array unit is composed of a plurality of divided array units, the control circuit unit is provided corresponding to each of the plurality of divided array units, and electrical connection is established in each of the divided array units, through an electrode located on each of the first surfaces of the first semiconductor substrate and the second semiconductor substrate, between the pixel array unit and the control circuit unit.

Abstract: A photosensitive transistor is disclosed herein that includes: a semiconductor substrate of the first conductivity type as a collector layer; above it a less doped layer of the first conductivity type having regions of different thickness; a semiconductor base layer of the second conductivity type above at least parts of the regions of the less doped layer; and an emitter layer of the first conductivity type above at least parts of the base layer, but not above at least one part of the part of the base layer disposed above the thinner region of the less doped layer.

Abstract: An electrical drive circuit may charge one or more inductive elements, where the electrical drive circuit includes the one or more inductive elements and a capacitive element in series between the one or more inductive elements and the optical load, and where the electrical drive circuit is connected to one or more sources. The electrical drive circuit may generate, after the charging and for a first time interval, a main electrical pulse. The electrical drive circuit may discharge, after the charging and for a second time interval, the one or more inductive elements to provide a compensation electrical pulse, where at least a portion of the second time interval overlaps with the first time interval. The electrical drive circuit may combine the main electrical pulse and the compensation electrical pulse into a combined electrical pulse. The electrical drive circuit may provide the combined electrical pulse to the optical load.

Abstract: In some embodiments, an image sensor is provided. The image sensor includes a photodetector disposed in a semiconductor substrate. A wave guide filter having a substantially planar upper surface is disposed over the photodetector. The wave guide filter includes a light filter disposed in a light filter grid structure. The light filter includes a first material that is translucent and has a first refractive index. The light filter grid structure includes a second material that is translucent and has a second refractive index less than the first refractive index.

Abstract: A sensor device includes a housing. The housing includes a front plate and a back plate, and a printed circuit board encased by the housing. The printed circuit board includes an image sensor, an image sensor processor, and conducting layers interposed between insulating layers. A conducting layer of the conducting layers includes power planes. One of the power planes is connected to a decoupling capacitor that carries power to the image sensor or the image sensor processor.

Abstract: An imaging element according to an embodiment of the present disclosure includes: a first substrate, a second substrate, and a third substrate that are stacked in this order. The first substrate including a sensor pixel that performs photoelectric conversion and the second substrate including a readout circuit are electrically coupled to each other by a first through wiring line provided in an interlayer insulating film. The second substrate and the third substrate including a logic circuit are electrically coupled to each other by a junction between pad electrodes or a second through wiring line penetrating through a semiconductor substrate.

Abstract: An image capturing device unit includes a multilayer substrate, an image capturing device mounted on one face of the multilayer substrate, and components mounted on the other face of the multilayer substrate. The multilayer substrate includes electrodes to electrically connect the image capturing device and the multilayer substrate, vias that electrically connect the electrodes and the components, first wiring electrically connected to the vias, second wiring on layers of the multilayer substrate, and a non-wired region that insulates the vias and the first wiring from the second wiring on each of the layers. The vias are located in the multilayer substrate so that, on a projection plane given when the multilayer substrate is viewed in a layering direction of the multilayer substrate, there is no area in which the non-wired region overlaps with a region where the image capturing device is arranged throughout the layers.

Abstract: In a light detection device, a circuit substrate includes a plurality of signal processing units which process a detection signal output from a corresponding pixel. Light-receiving regions of a plurality of avalanche photodiodes are two-dimensionally arranged for every pixel. In each of the signal processing units, a timing measurement unit measures timing at which light is incident on a corresponding pixel, based on the detection signal. An energy measurement unit measures energy of light incident on a corresponding pixel, based on the detection signal. A storage unit stores a measurement result in the timing measurement unit and the energy measurement unit. A light detection region where a plurality of the pixels are provided and a signal processing region where a plurality of the signal processing units are provided overlap each other at least at a part.

Abstract: A semiconductor device includes an oxide semiconductor layer including a crystalline region over an insulating surface, a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer, a gate insulating layer covering the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, and a gate electrode layer over the gate insulating layer in a region overlapping with the crystalline region. The crystalline region includes a crystal whose c-axis is aligned in a direction substantially perpendicular to a surface of the oxide semiconductor layer.

Abstract: A disclosed photoelectric conversion device includes: a semiconductor layer in which a photoelectric converter is provided; a substrate arranged on one face side of the semiconductor layer; and an interconnection structure arranged between the semiconductor layer and the substrate. The interconnection structure includes a first insulating film made of a first insulating material and a second insulating film provided on the semiconductor layer side of the first insulating film and made of a second insulating material, the first insulating material permeates more hydrogen than the second insulating material, an insulating member made of the first insulating material is located between the first insulating film and the semiconductor layer, and the first insulating film and the insulating member are connected to each other via an opening provided in the second insulating film.

Abstract: An imaging apparatus includes a plurality of imaging elements, at least one signal processing circuit, and a transfer path, in which each of the plurality of imaging elements includes a memory that is incorporated in the imaging element and stores image data obtained by imaging a subject, and a communication interface that is incorporated in the imaging element and outputs output image data based on the image data stored in the memory, the transfer path connects the plurality of imaging elements and a single signal processing circuit in series, and the communication interface of each of the plurality of imaging elements outputs the output image data to an imaging element in a rear stage or the signal processing circuit through the transfer path.

Abstract: A biosensor is provided. The biosensor includes a substrate, a first photodiode, a second photodiode, an angle-sensitive filter, and an immobilization layer. The first photodiode and the second photodiode are disposed in the substrate and define a first pixel and a second pixel, respectively. The first pixel and the second pixel receive a light. The angle-sensitive filter is disposed on the substrate. The immobilization layer is disposed on the angle-sensitive filter.

Abstract: An imaging device includes a first chip. The first chip includes a first pixel and a second pixel. The first pixel includes a first anode region and a first cathode region, and the second pixel includes a second anode region and a second cathode region. The first chip includes a first wiring layer. The first wiring layer includes a first anode electrode, a first anode via coupled to the first anode electrode and the first anode region, and a second anode via coupled to the first anode electrode and the second anode region.

Abstract: A sensor includes a first chip, a dam structure and a cover. The first chip includes a substrate, a sensing area and a low-k material layer. The sensing area is located on the surface of the substrate. The low-k material layer is located in the substrate. The dam structure is located on the first chip. The dam structure covers the edge of the low-k material layer. The cover is located on the dam structure and covers the sensing area. A manufacturing method of a sensor is also provided.

Abstract: Methods, systems, and devices are disclosed for low noise and high efficiency photoelectric amplification based on cycling excitation process (CEP). In some aspects, a device for amplifying signals of light-induced photocurrent includes an anode connected to a positive terminal of a voltage source; a disordered material layer coupled to the anode, wherein the disordered material layer is structured to have a thickness of 100 nm or less; and a cathode coupled to the disordered material layer and connected to a negative terminal of the voltage source, in which the device is operable to amplify photoexcited carriers based on photon absorption to produce an external quantum efficiency of the device that is at least 100%.

Abstract: High speed and spectrally selective pyroelectric detectors with plasmonic structure and methods of making and using same are disclosed. According to an aspect, a pyroelectric detector includes an artificial optical absorber or plasmonic absorber comprising an ensemble of subwavelength conductive components forming a plasmonic structure configured to receive light and to generate thermal energy from the received light. Further, the pyroelectric detector includes a pyroelectric material configured to receive the generated thermal energy from the plasmonic structure and to generate an electrical signal representative of the received thermal energy. Further, the pyroelectric detector includes an electronic component configured to receive the electrical signal from the pyroelectric material for detection of the received light.

Abstract: A solid-state image sensor is provided. The solid-state image sensor includes a plurality of photoelectric conversion elements. The solid-state image sensor also includes a first color filter layer disposed above the photoelectric conversion elements and having a plurality of first color filter segments. The solid-state image sensor further includes a second color filter layer disposed adjacent to the first color filter layer and having a plurality of second color filter segments. The solid-state image sensor includes a first grid structure disposed between the first color filter layer and the second color filter layer. The first grid structure has a first grid height. The solid-state image sensor also includes a second grid structure disposed between the first color filter segments and between the second color filter segments. The second grid structure has a second grid height that is lower than or equal to the first grid height.

Abstract: In a sensor substrate, a plurality of pixels are formed in a pixel region of a first surface of a flexible base material, and a terminal portion for electrically connecting a cable is provided in the terminal region of the first surface. A conversion layer is provided outside the terminal region of the base material and converts radiation into light. A reinforcing member is provided on a second surface of the base material to reinforce the strength of the base material. A stress neutral plane adjusting member is provided inside the terminal region and in at least a part, corresponding to the inside of the terminal region, of a cable electrically connected to the terminal portion.

Abstract: An imaging device that can obtain imaging data corresponding to high-resolution images in a short period of time is provided. The imaging device includes a pixel including a photoelectric conversion element and n (n is an integer more than 2 inclusive) retention circuits. The photoelectric conversion element and the n retention circuits are stacked. One electrode of the photoelectric conversion element is electrically connected to the first to n-th retention circuits. The retention circuits include OS transistors with an extremely low off-state current feature, and can retain imaging data for a long time. In the first to n-th periods, the imaging device obtains the first to n-th imaging data and retains it in the first to n-th retention circuits. Then, the first to n-th imaging data retained in the first to n-th retention circuits are read out. The read imaging data is output outside the imaging data through AD conversion.

Abstract: A photovoltaic cell assembly suitable for use in a dense array concentrated photovoltaic cell module includes a plurality of photovoltaic cells mounted on a substrate and a by-pass diode associated with each cell to allow the cell to be by-passed in the electrical circuit in the event that the cell fails or has low illumination. The diodes are positioned in the shadows of the cells. The diodes provide direct pathways for heat and electricity from the cells to the substrate.

Abstract: Detector modules, detectors and medical imaging devices are provided. One of the detector modules includes: a support and a plurality of detector sub-modules arranged on the support along an extension direction in which the support extends. Each of the detector sub-modules has a first area and a second area in the extension direction. A detecting device is disposed in the first area, and a functional module is disposed in the second area. The functional module is electrically connected to the detecting device for receiving an electrical signal from the detecting device. The plurality of detector sub-modules includes a first detector sub-module and a second detector sub-module that are arranged adjacent to each other in the extension direction, and the first area of the first detector sub-module at least partially overlaps with the second area of the second detector sub-module.

Abstract: A solid-state imaging device includes a plurality of pixels, each of the plurality of pixels including a photoelectric converter. The photoelectric converter includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type provided under the first semiconductor region, and a third semiconductor region of the first conductivity type provided under the second semiconductor region. The second semiconductor region has a first end portion and a second end portion opposing to the first end portion. The third semiconductor region has a first region and a second region overlapping with the second semiconductor region in a plan view, and the first region and the second region are spaced apart from each other from a part of the first end portion to a part of the second end portion.

Abstract: In some embodiments, a method is provided. The method includes forming a plurality of trenches in a semiconductor substrate, where the trenches extend into the semiconductor substrate from a back-side of the semiconductor substrate. An epitaxial layer comprising a dopant is formed on lower surfaces of the trenches, sidewalls of the trenches, and the back-side of the semiconductor substrate, where the dopant has a first doping type. The dopant is driven into the semiconductor substrate to form a first doped region having the first doping type along the epitaxial layer, where the first doped region separates a second doped region having a second doping type opposite the first doping type from the sidewalls of the trenches and from the back-side of the semiconductor substrate. A dielectric layer is formed over the back-side of the semiconductor substrate, where the dielectric layer fill the trenches to form back-side deep trench isolation structures.

Abstract: The present disclosure is directed to photovoltaic junctions and methods for producing the same. Embodiments of the disclosure may be incorporated in various devices for applications such as solar cells and light detectors and may demonstrate advantages compared to standard materials used for photovoltaic junctions such as silica. An example embodiment of the disclosure includes a photovoltaic junction, the junction including a light absorbing material, an electron acceptor for shuttling electrons, and a metallic contact. In general, embodiments of the disclosure as disclosed herein include photovoltaic junctions which provide absorption across one or more wavelengths in the range from about 200 nm to about 1000 nm, or from near IR (NIR) to ultra-violet (UV). Generally, these embodiments include a multi-layered light absorbing material that can be formed from quantum dots that are successively deposited on the surface of an electron acceptor (e.g., a semiconductor).

Abstract: Detector modules, detectors and medical imaging devices are provided. One of the detector modules includes: a support and a plurality of detector sub-modules arranged on the support along an extension direction in which the support extends. Each of the detector sub-modules has a first area and a second area in the extension direction. A detecting device is disposed in the first area, and a functional module is disposed in the second area. The functional module is electrically connected to the detecting device for receiving an electrical signal from the detecting device. The plurality of detector sub-modules includes a first detector sub-module and a second detector sub-module that are arranged adjacent to each other in the extension direction, and the first area of the first detector sub-module at least partially overlaps with the second area of the second detector sub-module.

Abstract: A method for producing an imager includes the following steps: a. attaching an imaging sensor to a first substrate; b. cutting out the first substrate a predefined distance around the attached imaging sensor; c. attaching a driver circuit board for driving the imaging sensor to the cut-out first substrate, close to the attached imaging sensor; d. connecting the driver circuit board for driving the imaging sensor to the attached imaging sensor in order to obtain a first tile; e. repeating the attaching, cutting-out, attaching, and connecting steps in order to obtain a second tile; f. butting together the obtained first tile and second tile by placing the cut-out first substrates in edge-to-edge contact; g. attaching the butted-together tiles to a main substrate; h. connecting the driver circuit boards of the imaging sensors of the butted-together first tile and second tile to a motherboard of the imager.

Abstract: A semiconductor substrate including a first main surface and a second main surface opposing each other is provided. The semiconductor substrate includes a first semiconductor region of a first conductivity type. The semiconductor substrate includes a plurality of planned regions where a plurality of second semiconductor regions of a second conductivity type forming pn junctions with the first semiconductor region are going to be formed, in a side of the second main surface. A textured region is formed on surfaces included in the plurality of planned regions, in the second main surface. The plurality of second semiconductor regions are formed in the plurality of planned regions after forming the textured region. The first main surface is a light incident surface of the semiconductor substrate.

Abstract: A silicon interposer may include an on-chip DC blocking capacitor, comprising: a first electrical connection to couple to a supply voltage and to cathodes of a plurality of photodiodes formed in a two-dimensional photodiode array on a first substrate, and a second electrical connection to couple to ground and to ground inputs of a plurality of transimpedance amplifiers on a second substrate; wherein the on-chip DC blocking capacitor is configured to be shared among a plurality of receiver circuits comprising the plurality of photodiodes and the plurality of transimpedance amplifiers; and wherein the silicon interposer comprises a substrate separate from the first substrate and the second substrate.