Matrix Or Array (e.g., Single Line Arrays) Patents (Class 257/443)
  • Patent number: 10546890
    Abstract: Some embodiments relate to a device array including a plurality of devices arranged in a semiconductor substrate. A protection ring circumscribes an outer perimeter of the device array. The protection ring includes a first ring neighboring the device array, a second ring circumscribing the first ring and meeting the first ring at a first p-n junction, and a third ring circumscribing the second ring and meeting the second ring at a second p-n junction. The first ring has a first width, the second ring has a second width, and the third ring has a third width. At least two of the first width, the second width, and the third width are different from one another.
    Type: Grant
    Filed: April 17, 2019
    Date of Patent: January 28, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tsung-Han Tsai, Chun-Hao Chou, Kuo-Cheng Lee, Yung-Lung Hsu, Yun-Wei Cheng
  • Patent number: 10546886
    Abstract: The invention relates to a photodetection device comprising a substrate and a diodes network, the substrate comprising an absorption layer and each diode comprising a collection region with a first type of doping in the absorption layer. The device comprises a conduction mesh under the surface of the substrate, comprising at least one conduction channel inserted between the collection regions of two adjacent diodes, the at least one conduction channel having a second doping type opposite the first type and a higher doping density than the absorption layer. The doping density of the at least one conduction channel is derived from metal diffusion in the absorption layer from a metal mesh present on the substrate surface. The absorption layer has the first doping type. The invention also relates to a method of making such a device.
    Type: Grant
    Filed: April 19, 2017
    Date of Patent: January 28, 2020
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventor: Johan Rothman
  • Patent number: 10529768
    Abstract: A method for making a CMOS image sensor may include forming an active pixel sensor array including pixels, each including a photodiode and read circuitry coupled to the photodiode and including transistors defining a 4T cell arrangement. At least one of the transistors may include a first semiconductor layer and a superlattice on the first semiconductor layer including a plurality of stacked groups of layers, with each group including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The transistor(s) may also include a second semiconductor layer on the superlattice, spaced apart source and drain regions in the second semiconductor layer defining a channel therebetween, and a gate comprising a gate insulating layer on the second semiconductor layer and a gate electrode on the gate insulating layer.
    Type: Grant
    Filed: December 15, 2017
    Date of Patent: January 7, 2020
    Assignee: ATOMERA INCORPORATED
    Inventors: Yi-Ann Chen, Abid Husain, Hideki Takeuchi
  • Patent number: 10514450
    Abstract: A beamformer for performing analog beamforming of ultrasound signals received from a plurality of transducer devices, the beamformer includes: first analog devices configured to output first ultrasound signals by delaying or transmitting the ultrasound signals based on a predetermined delay time; second analog devices configured to store first sub-ultrasound signals from among the first ultrasound signals, and to output the first sub-ultrasound signals depending on whether the first sub-ultrasound signals are repeatedly used; and a processor configured to control the delay time, and to perform the analog beamforming by summing the first ultrasound signals which correspond to the plurality of transducer devices and which are outputted depending on the delay time.
    Type: Grant
    Filed: September 28, 2016
    Date of Patent: December 24, 2019
    Assignees: SAMSUNG MEDISON CO., LTD., SOGANG UNIVERSITY RESEARCH FOUNDATION
    Inventors: Woo-youl Lee, Tae-kyong Song, Hyun-gil Kang, Ji-won Park
  • Patent number: 10497737
    Abstract: A pixel element for an imaging sensor comprises a semiconductor substrate, a radiation-sensitive element configured to generate electric charges in response to incident radiation, a charge accumulation region provided in the semiconductor substrate configured to accumulate at least a portion of the electric charges, and an electrode arranged on the semiconductor substrate adjacent to the charge accumulation region. The electrode is electrically insulated from the semiconductor substrate such as to form an inversion region in the semiconductor substrate that connects to the charge accumulation region when a voltage is applied to said electrode.
    Type: Grant
    Filed: May 30, 2013
    Date of Patent: December 3, 2019
    Assignee: Caeleste CVBA
    Inventor: Bart Dierickx
  • Patent number: 10418398
    Abstract: A solid-state image pickup apparatus includes a photoelectric conversion unit, a charge storage unit, and a floating diffusion unit, all disposed on a semiconductor substrate. The solid-state image pickup apparatus further includes a first gate electrode disposed on the semiconductor substrate and extending between the photoelectric conversion unit and charge storage unit, and a second gate electrode disposed on the semiconductor substrate and extending between the charge storage unit and the floating diffusion unit. The solid-state image pickup apparatus further includes a light shielding member including a first part and a second part, wherein the first part is disposed over the charge storage unit and at least over the first gate electrode or the second gate electrode, and the second part is disposed between the first gate electrode and the second gate electrode such that the second part extends from the first part toward a surface of the semiconductor substrate.
    Type: Grant
    Filed: January 3, 2018
    Date of Patent: September 17, 2019
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Masahiro Kobayashi, Yuichiro Yamashita, Yusuke Onuki
  • Patent number: 10403663
    Abstract: A solid-state imaging device includes a plurality of pixels each of which includes a photoelectric conversion unit that generates charges by photoelectrically converting light, and a transistor that reads a pixel signal of a level corresponding to the charges generated in the photoelectric conversion unit. A phase difference pixel which is at least a part of the plurality of pixels is configured in such a manner that the photoelectric conversion unit is divided into a plurality of photoelectric conversion units and an insulated light shielding film is embedded in a region for separating the plurality of photoelectric conversion units, which are divided, from each other.
    Type: Grant
    Filed: November 7, 2017
    Date of Patent: September 3, 2019
    Assignee: Sony Corporation
    Inventor: Hirotoshi Nomura
  • Patent number: 10396060
    Abstract: According to one embodiment, a semiconductor device includes an interconnect layer, an electrical element, an optical element, and a resin portion. The resin portion includes a first partial region between the electrical element and the optical element. At least a portion of the optical element does not overlap the resin portion in a first direction. The first partial region has first and second resin portion surfaces. The second resin portion surface is opposite to the first resin portion surface and opposes the interconnect layer. The optical element has first and second optical element surfaces. The second optical element surface is opposite to the first optical element surface and opposes the interconnect layer. A distance along the first direction between the interconnect layer and the first resin portion surface is longer than a distance along the first direction between the interconnect layer and the first optical element surface.
    Type: Grant
    Filed: February 23, 2018
    Date of Patent: August 27, 2019
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yoichiro Kurita, Hideto Furuyama, Hiroshi Uemura
  • Patent number: 10373993
    Abstract: A solid-state image pickup apparatus includes a photoelectric conversion unit, a charge storage unit, and a floating diffusion unit, all disposed on a semiconductor substrate. The solid-state image pickup apparatus further includes a first gate electrode disposed on the semiconductor substrate and extending between the photoelectric conversion unit and charge storage unit, and a second gate electrode disposed on the semiconductor substrate and extending between the charge storage unit and the floating diffusion unit. The solid-state image pickup apparatus further includes a light shielding member including a first part and a second part, wherein the first part is disposed over the charge storage unit and at least over the first gate electrode or the second gate electrode, and the second part is disposed between the first gate electrode and the second gate electrode such that the second part extends from the first part toward a surface of the semiconductor substrate.
    Type: Grant
    Filed: January 3, 2018
    Date of Patent: August 6, 2019
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Masahiro Kobayashi, Yuichiro Yamashita, Yusuke Onuki
  • Patent number: 10368417
    Abstract: The present invention relates to a display device and, particularly, to a display device using a semiconductor light-emitting device. The display device according to the present invention comprises a semiconductor light-emitting device, and the semiconductor light-emitting device comprises: a first conductive semiconductor layer; a second conductive semiconductor layer having a lateral surface, and overlapped with the first conductive semiconductor layer; a first conductive electrode electrically connected to the first conductive semiconductor layer; and a second conductive electrode electrically connected to the second conductive semiconductor layer, wherein the second conductive semiconductor layer has an inclined part inclined with respect to the lateral surface, and the second conductive electrode is formed so as to cover the inclined part.
    Type: Grant
    Filed: July 5, 2016
    Date of Patent: July 30, 2019
    Assignee: LG ELECTRONICS INC.
    Inventors: Seonock Kim, Hwankuk Yuh
  • Patent number: 10366199
    Abstract: Aspects of the disclosure are directed to a metal only cell-based power grid (PG) architecture. In accordance with one aspect, the power gird (PG) architecture includes a cell building block structure with a N×M grid configuration including N cell building blocks arranged in a first direction and M cell building blocks arranged in a second direction, wherein the first direction and the second direction are orthogonal to one another; and a plurality of power grid (PG) cells, wherein each of the N cell building blocks and each of the M cell building blocks are occupied by a PG cell of the plurality of PG cells.
    Type: Grant
    Filed: April 11, 2017
    Date of Patent: July 30, 2019
    Assignee: QUALCOMM Incorporated
    Inventors: Jagadish Hosmani, Mohammed Yousuff Shariff, Venugopal Sanaka, Huibo Hou
  • Patent number: 10332932
    Abstract: The present disclosure relates to a solid-state image pickup device, a manufacturing method, and an electronic apparatus, which can obtain high charge transfer efficiency from a photoelectric conversion unit to a floating diffusion layer. The floating diffusion layer is arranged in a rectangular shape so as to surround a gate electrode of a vertical transistor whose groove portion is rectangular. A reset drain is formed so as to be adjacent to the floating diffusion layer through a reset gate. A potential of the floating diffusion layer is reset to the same potential as that of the reset drain by applying a predetermined voltage to the reset gate. It is possible to apply the present disclosure to, for example, a CMOS solid-state image pickup device used in an image pickup device such as a camera.
    Type: Grant
    Filed: June 26, 2015
    Date of Patent: June 25, 2019
    Assignee: Sony Corporation
    Inventors: Keisuke Hatano, Hideaki Togashi
  • Patent number: 10283547
    Abstract: An image sensor includes a sensor portion and an ASIC portion bonded to the sensor portion. The sensor portion includes a first substrate having radiation-sensing pixels, a first interconnect structure, a first isolation layer, and a first dielectric layer. The ASIC portion includes a second substrate, a second isolation layer, and a second dielectric layer. The material compositions of the first and second isolation layers and the first and second dielectric layers are configured such that the first and second isolation layers may serve as barrier layers to prevent copper diffusion into oxide. The first and second isolation layers may also serve as etching-stop layers in the formation of the image sensor.
    Type: Grant
    Filed: December 30, 2016
    Date of Patent: May 7, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: U-Ting Chen, Shu-Ting Tsai, Cheng-Ying Ho, Tzu-Hsuan Hsu, Shih Pei Chou
  • Patent number: 10264242
    Abstract: The invention concerns an image sensor comprising: a depth pixel (PZ) having: a detection zone (PD); a first memory (mem1) electrically coupled to the detection zone by a first gate (310); a second memory (mem2) electrically coupled to the detection zone by a second gate (314); and a third memory (mem3) electrically coupled to the detection zone by a third gate (316), wherein the first, second and third memories are each formed by a doped region sandwiched between first and second parallel straight walls (404, 406), the first and second walls of each memory having a conductive core adapted to receive a biasing voltage; and a plurality of 2D image pixels (P1 to P8) positioned adjacent to the depth pixel, wherein the first, second and third memories extend to form at least partial isolation walls between corresponding adjacent pairs of the 2D image pixels.
    Type: Grant
    Filed: December 1, 2017
    Date of Patent: April 16, 2019
    Assignee: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Yvon Cazaux, Benoit Giffard
  • Patent number: 10236318
    Abstract: The present disclosure relates to a solid-state imaging device, a driving method for the same, and an electronic appliance, and an object is to provide a solid-state imaging device that can achieve the pixel miniaturization and the global shutter function with higher sensitivity and saturated charge amount. Another object is to provide an electronic appliance including the solid-state imaging device. In a solid-state imaging device 1 having the global shutter function, a first charge accumulation unit 18 and a second charge accumulation unit 25 are stacked in the depth direction of a substrate 12, and the transfer of the signal charges from the first charge accumulation unit 12 to the second charge accumulation unit 25 is conducted by a vertical first transfer transistor Tr1. Thus, the pixel miniaturization can be achieved.
    Type: Grant
    Filed: August 5, 2016
    Date of Patent: March 19, 2019
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventor: Atsushi Toda
  • Patent number: 10170513
    Abstract: An image sensor arranged inside and on top of a semi-conductor substrate having a front surface and a rear surface, the sensor including a plurality of pixels, each including: a photosensitive area, a reading area, and a storage area extending between the photosensitive area and the reading area; a vertical insulated electrode including an opening of transfer between the photosensitive area and the storage area; and at least one insulation element among the following: a) a layer of an insulating material extending under the surface of the photosensitive area and of the storage area and having its front surface in contact with the rear surface of the electrode; and b) an insulating wall extending vertically in the opening, or under the opening.
    Type: Grant
    Filed: September 23, 2017
    Date of Patent: January 1, 2019
    Assignees: Commissariat à l'Energie Atomique et aux Energies, STMICROELECTRONICS (CROLLES 2) SAS, STMICROELECTRONICS (GRENOBLE 2) SAS
    Inventors: Yvon Cazaux, François Roy, Marie Guillon, Arnaud Laflaquiere
  • Patent number: 10164156
    Abstract: Structures and formation methods of an image sensor structure are provided. The image sensor structure is provided. The image sensor structure includes a substrate, a photodiode component in the substrate, and a grid structure over the substrate. The grid structure includes a bottom dielectric element over the substrate, a reflective element over the bottom dielectric element, and an upper dielectric element over the reflective element. The reflective element has a sidewall which is anti-corrosive in a basic condition and an acidic condition. The image sensor structure also includes a color filter element over the substrate and surrounded by the grid structure. The color filter element is aligned with the photodiode component.
    Type: Grant
    Filed: March 31, 2017
    Date of Patent: December 25, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ching-Chung Su, Hung-Wen Hsu, Wei-Chuang Wu, Wei-Lin Chen, Jiech-Fun Lu
  • Patent number: 10134811
    Abstract: Image sensors include a color photo-sensing photoelectric conversion device, a first color filter and a second color filter disposed under the color photo-sensing photoelectric conversion device, a first photodiode and a second photodiode disposed under the first color filter and the second color filter, respectively, a first light guide member disposed between the first color filter and the first photodiode, and a second light guide member disposed between the second color filter and the second photodiode.
    Type: Grant
    Filed: May 11, 2017
    Date of Patent: November 20, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyu Sik Kim, Satoh Ryuichi, Gae Hwang Lee
  • Patent number: 10134793
    Abstract: A sensor chip formed from a plurality of sensor chips fabricated on a wafer, the wafer including a top surface, a bottom surface opposite the top surface and a thickness between the top and bottom surfaces, the sensor chip including an active area formed on the top surface, a first sacrificial edge including a first fiducial and a second fiducial, and a first score line formed in a first portion of the thickness on the top surface between the first sacrificial edge and the active area.
    Type: Grant
    Filed: May 16, 2017
    Date of Patent: November 20, 2018
    Assignee: Xerox Corporation
    Inventors: Joseph F. Casey, Gary D. Redding, Craig Alan Zufelt, Michael B. Monahan
  • Patent number: 10116844
    Abstract: A camera module is provided, including a lens driving mechanism, a lens unit, a circuit board, and an image sensor. The lens unit is disposed on the lens driving mechanism. The image sensor is disposed on the circuit board. The circuit board includes a metal member, an insulation layer, and a metal wire. The insulation layer is disposed between the metal member and the metal wire, and the metal wire is electrically connected to the image sensor. The lens driving module can drive the lens unit to move relative to the image sensor. The image sensor can catch the light through the lens unit.
    Type: Grant
    Filed: April 5, 2017
    Date of Patent: October 30, 2018
    Assignee: TDK TAIWAN CORP.
    Inventors: Chao-Chang Hu, Chen-Hsien Fan
  • Patent number: 10109664
    Abstract: An image sensor configured to provide improved reliability may include a charge passivation layer that includes a multiple different elements, each element of the different elements being a metal element or a metalloid element. The different elements may include a first element of a first group of periodic table elements and a second element of a second, different group of periodic table elements. The charge passivation layer may include an amorphous crystal structure.
    Type: Grant
    Filed: May 30, 2017
    Date of Patent: October 23, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: In Gyu Baek, Sang Hoon Uhm, Tae Yon Lee, Jae Sung Hur
  • Patent number: 10109669
    Abstract: The present technology relates to a solid-state imaging device and an electronic apparatus that perform a stable overflow from a photodiode and prevent Qs from decreasing and color mixing from occurring. A solid-state imaging device according to an aspect of the present technology includes, at a light receiving surface side of a semiconductor substrate, a charge retention part that generates and retains a charge in response to incident light, an OFD into which the charge saturated at the charge retention part is discharged, and a potential barrier that becomes a barrier of the charge that flows from the charge retention part to the OFD, the OFD including a low concentration OFD and a high concentration OFD having different impurity concentrations of the same type, and the high concentration OFD and the potential barrier being formed at a distance. For example, the present technology is applicable to a CMOS image sensor.
    Type: Grant
    Filed: December 11, 2015
    Date of Patent: October 23, 2018
    Assignee: Sony Corporation
    Inventors: Taiichiro Watanabe, Ryosuke Nakamura, Yusuke Sato, Fumihiko Koga
  • Patent number: 10090344
    Abstract: An imaging device which can perform imaging with a global shutter system and in which transistors are shared by pixels is provided. The imaging device includes first and second photoelectric conversion elements and first to sixth transistors. Active layers of the first to fourth transistors each include an oxide semiconductor. The imaging device has a configuration in which a reset transistor and an amplifier transistor are shared by a plurality of pixels and can perform imaging with a global shutter system. In addition, the imaging device can be used as a high-speed camera.
    Type: Grant
    Filed: September 1, 2016
    Date of Patent: October 2, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Takayuki Ikeda
  • Patent number: 10090353
    Abstract: Semiconductor devices, methods of manufacturing thereof, and image sensor devices are disclosed. In some embodiments, a semiconductor device comprises a semiconductor chip comprising an array region, a periphery region, and a through-via disposed therein. The semiconductor device comprises a guard structure disposed in the semiconductor chip between the array region and the through-via or between the through-via and a portion of the periphery region.
    Type: Grant
    Filed: May 30, 2017
    Date of Patent: October 2, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Chieh Chuang, Dun-Nian Yaung, Jen-Cheng Liu, Tzu-Hsuan Hsu, Feng-Chi Hung, Min-Feng Kao
  • Patent number: 10090348
    Abstract: An image sensor is described. The image sensor may include a substrate including a pixel area, a logic area, and a guard area disposed between the pixel area and the logic area. The guard area may substantially prevent transfer of heat generated in the logic area from reaching the pixel area.
    Type: Grant
    Filed: March 20, 2017
    Date of Patent: October 2, 2018
    Assignee: SK Hynix inc.
    Inventors: Do-Hwan Kim, Jae-Won Lee
  • Patent number: 10073052
    Abstract: Provided is an ion sensor including a supporting substrate, a plurality of cells, a silicon substrate, a plurality of transistors, and an analog-digital conversion circuit. The plurality of cells, the plurality of transistors, and the analog-digital conversion circuit are provided above the supporting substrate. Each of the plurality of transistors has a corresponding gate provided on a first surface of the silicon substrate. The analog-digital conversion circuit is provided on the silicon substrate. The ion-sensing surface is provided on a second surface of the silicon substrate. The second surface is opposite to the first surface.
    Type: Grant
    Filed: December 8, 2016
    Date of Patent: September 11, 2018
    Assignees: SHARP KABUSHIKI KAISHA, NATIONAL UNIVERSITY CORPORATION TOYOHASHI UNIVERSI
    Inventors: Kenichi Nagai, Satoshi Saitoh, Kazuaki Sawada
  • Patent number: 10056344
    Abstract: A first surface of a first substrate included in a semiconductor device includes a first area in which a plurality of first connecting portions are disposed and a second area in which a plurality of second connecting portions are disposed. A second surface of a second substrate included in the semiconductor device includes a third area in which the plurality of first connecting portions are disposed and a fourth area in which the plurality of second connecting portions are disposed. The second area surrounds the first area on the first surface. The fourth area surrounds the third area on the second surface. A height of the second base electrode in a thickness direction of the first substrate is greater than a height of the first base electrode in the thickness direction.
    Type: Grant
    Filed: October 25, 2017
    Date of Patent: August 21, 2018
    Assignee: OLYMPUS CORPORATION
    Inventor: Haruhisa Saito
  • Patent number: 10043962
    Abstract: Structures that include thermoelectric couples and methods for fabricating such structures. A device level and a back-end-of-line (BEOL) interconnect structure are fabricated at a front side of a substrate. A thermoelectric couple is formed that is coupled with the substrate. The thermoelectric couple includes a first through-silicon via extending through the device level and the substrate to a back side of the substrate, a second through-silicon via extending through the device level and the substrate to the back side of the substrate, an n-type thermoelectric pillar coupled with the first through-silicon via, and a p-type thermoelectric pillar coupled with the second through-silicon via. The BEOL interconnect structure includes a wire that couples the first through-silicon via in series with the second through-silicon via.
    Type: Grant
    Filed: May 5, 2016
    Date of Patent: August 7, 2018
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Sudeep Mandal, Richard S. Graf
  • Patent number: 9941315
    Abstract: A photoelectric conversion device includes a photoelectric conversion unit including a first and second electrodes, a photoelectric conversion layer between the first and second electrodes, and an insulating layer between the photoelectric conversion layer and the second electrodes, an amplifier unit connected to the second electrode and outputs a signal generated in the photoelectric conversion unit, and a reset unit for resetting a voltage of the second electrode. An accumulating operation for accumulating signal charges in the photoelectric conversion unit and a charge removing operation for removing the signal charges from the photoelectric conversion unit are alternately executed in accordance with a voltage applied between the first and second electrodes, and the charge removing operation is executed multiple times between a first accumulating operation and a second accumulating operation which is executed after the first accumulating operation.
    Type: Grant
    Filed: October 7, 2016
    Date of Patent: April 10, 2018
    Assignee: CANON KABUSHIKI KAISHA
    Inventor: Kazuaki Tashiro
  • Patent number: 9923019
    Abstract: A semiconductor device for converting incident light into an electric current includes a semiconductor substrate; an electrode embedded in the semiconductor substrate; an insulation film contacting the electrode in the semiconductor substrate; a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and a third semiconductor region of the first conductivity type, formed sequentially in a depth direction from a side of a front face of the semiconductor substrate; and a fourth semiconductor region of the second conductivity type contacting the insulation film and the second semiconductor region. An impurity concentration of the fourth semiconductor region is greater than an impurity concentration of the second semiconductor region.
    Type: Grant
    Filed: November 9, 2015
    Date of Patent: March 20, 2018
    Assignee: RICOH COMPANY, LTD.
    Inventors: Takaaki Negoro, Yoshinori Ueda, Katsuyuki Sakurano, Yasukazu Nakatani, Kazuhiro Yoneda, Katsuhiko Aisu
  • Patent number: 9911768
    Abstract: The present disclosure relates to a solid state imaging device in which, in phase difference pixels that do not include a light blocking layer for forming a phase difference, the phase difference detection characteristics can be made uniform regardless of the image height. Provided is a solid state imaging device including a pixel array unit in which a plurality of pixels are two-dimensionally arranged in a matrix configuration. Part of the pixels in the pixel array unit include a first photoelectric conversion element and a second photoelectric conversion element configured to receive and photoelectrically convert incident light. A center position of a light receiving characteristic distribution of the first photoelectric conversion element and a center position of a light receiving characteristic distribution of the second photoelectric conversion element are configured so as to be the same between a central portion and a peripheral portion of the pixel array unit.
    Type: Grant
    Filed: April 27, 2015
    Date of Patent: March 6, 2018
    Assignee: SONY CORPORATION
    Inventor: Akihiro Nakamura
  • Patent number: 9871987
    Abstract: In an image pickup element, a plurality of unit pixels constituted by one micro lens and a photodiode arranged underneath the micro lens are arranged in rows and columns. The image pickup element includes first unit pixels in which a plurality of photodiodes are arranged underneath one micro lens, second unit pixels different from the first unit pixels, m first output lines per column from which signals of the first unit pixels are output, and n second output lines per column from which signals of the second unit pixels are output.
    Type: Grant
    Filed: March 4, 2016
    Date of Patent: January 16, 2018
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Toshiharu Ueda, Teruyuki Okado
  • Patent number: 9871984
    Abstract: An imaging device having phototransistors in photodetectors of pixels is disclosed. The imaging device includes an implanted electrode configured to separate the pixels, a first emitter disposed at a position adjacent to the implanted electrode, and a second emitter disposed such that a distance from the implanted electrode to the second emitter is longer than a distance from the implanted electrode to the first emitter.
    Type: Grant
    Filed: July 1, 2015
    Date of Patent: January 16, 2018
    Assignee: RICOH COMPANY, LTD.
    Inventors: Kazuhiro Yoneda, Hirofumi Watanabe, Takaaki Negoro, Katsuhiko Aisu, Yasukazu Nakatani, Katsuyuki Sakurano
  • Patent number: 9871072
    Abstract: A photoelectric conversion device has an insulator film disposed on a silicon layer having a photoelectric conversion region, the insulator film having a portion overlapped with the photoelectric conversion region, a silicon oxide film disposed on the insulator film, the silicon oxide film having a portion overlapped with the photoelectric conversion region, an electroconductive member disposed between the insulator film and the silicon oxide film, and a silicon oxide layer disposed between the electroconductive member and the silicon oxide film, in which the portion overlapped with the photoelectric conversion region of the silicon oxide film is in contact with the portion overlapped with the photoelectric conversion region of the insulator film and the hydrogen concentration of the silicon oxide film is greater than the hydrogen concentration of the silicon oxide layer.
    Type: Grant
    Filed: May 26, 2016
    Date of Patent: January 16, 2018
    Assignee: Canon Kabushiki Kaisha
    Inventors: Akihiro Kawano, Yukinobu Suzuki, Nobutaka Ukigaya, Takayasu Kanesada, Takeshi Aoki, Hiroshi Takakusagi
  • Patent number: 9679939
    Abstract: A backside illuminated (BSI) image sensor device includes a device layer, a doped isolation region and a doped radiation sensing region. The device layer has a front side and a backside, in which the device layer has a thickness greater than or equal to 4 ?m. The doped isolation region having a first dopant of a first conductivity is through the device layer to define a plurality of pixel regions of the device layer, in which the doped isolation region includes a first upper region adjacent to the front side and a first lower region between the first upper region and the backside, and the first upper region has a width less than a width of the first lower region. The doped radiation sensing region having a second dopant of a second conductivity opposite to the first conductivity is in one of the pixel regions of the device layer.
    Type: Grant
    Filed: July 12, 2016
    Date of Patent: June 13, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yun-Wei Cheng, Yin-Chieh Huang, Ching-Chun Wang, Chun-Hao Chou, Kuo-Cheng Lee, Hsun-Ying Huang
  • Patent number: 9661199
    Abstract: There is provided an imaging apparatus including: a lens group including one or more lens elements; and an image sensor having a light-receiving surface onto which an image of an object is formed by the lens group. The light-receiving surface of the image sensor is curved concavely toward the lens group. A distance from a lens surface closest to the light-receiving surface of the lens group to the light-receiving surface is a half or more of a distance from a lens surface closest to the object of the lens group to the light-receiving surface.
    Type: Grant
    Filed: January 20, 2014
    Date of Patent: May 23, 2017
    Assignee: SONY CORPORATION
    Inventor: Tomohiko Baba
  • Patent number: 9640686
    Abstract: An electro-optical device can include a plurality of nanocrystals positioned between a first electrode and a second electrode.
    Type: Grant
    Filed: January 29, 2014
    Date of Patent: May 2, 2017
    Assignee: Massachusetts Institute of Technology
    Inventors: Moungi Bawendi, Venda J. Porter, Marc Kastner, Tamar Mentzel
  • Patent number: 9642262
    Abstract: A dummy trace portion is provided in a region between at least a suspension board with circuit on one end side and a support frame of a suspension board assembly sheet with circuits. A base insulating layer is formed on a support substrate in the dummy trace portion. A plurality of conductor traces are formed on the base insulating layer, and a cover insulating layer is formed on the base insulating layer to cover each conductor trace. At least one of the base insulating layer and the cover insulating layer in the dummy trace portion has a groove.
    Type: Grant
    Filed: December 27, 2013
    Date of Patent: May 2, 2017
    Assignee: NITTO DENKO CORPORATION
    Inventors: Jun Ishii, Terukazu Ihara, Naohiro Terada
  • Patent number: 9634157
    Abstract: A method for manufacturing a thin-film solar cell module includes a rear surface electrode layer deposition step for depositing a rear surface electrode layer on a substrate, an alkali metal adding step for adding an alkali metal to the rear surface electrode layer, a light absorbing layer deposition step for depositing a light absorbing layer on the rear surface electrode layer, a division groove forming step for forming a division groove that divides the light absorbing layer and exposing a front surface of the rear surface electrode layer in the division groove, an alloying step for alloying the rear surface electrode layer and the alkali metal on the front surface of the rear surface electrode layer exposed in the division groove, and a transparent conductive film deposition step for depositing a transparent conductive film on the light absorbing layer and in the division groove.
    Type: Grant
    Filed: November 22, 2012
    Date of Patent: April 25, 2017
    Assignee: Solar Frontier K.K.
    Inventors: Hiroki Sugimoto, Keisuke Ishikawa, Masashi Kondou
  • Patent number: 9612263
    Abstract: A method of detecting a change in current is provided which includes irradiating light on at least one photoelectric conversion material layer, and detecting an increased change in current generated in the photoelectric conversion material layer. A photoelectric conversion apparatus is also provided and includes a photoelectric conversion element including a photoelectric conversion material layer, and a current detection circuit electrically connected to the photoelectric conversion element. In the photoelectric conversion apparatus, the current detection circuit detects an increased change in current generated in the photoelectric conversion material layer.
    Type: Grant
    Filed: February 10, 2011
    Date of Patent: April 4, 2017
    Assignee: SONY CORPORATION
    Inventors: Masaki Murata, Masanori Oka, Osamu Enoki
  • Patent number: 9584746
    Abstract: An image processing apparatus that comprises a plurality of read out rows in an imaging unit of the apparatus. The imaging region comprises of a plurality of pixels which are equipped with color filters of the red, blue and green type. The apparatus comprises a controller configured to set a frame rate for a first row scanning unit and a second frame rate for a second row scanning unit. The apparatus is further configured to perform image interpolation and perform the auto focus, auto exposure, auto black white or the like functions and display an image with a high resolution on a display unit.
    Type: Grant
    Filed: June 5, 2013
    Date of Patent: February 28, 2017
    Assignees: Sony Corporation, Sony Mobile Communications Inc.
    Inventor: Kenji Omori
  • Patent number: 9570915
    Abstract: Aspects relate to an integrated system that is electrically powered. The integrated system includes a circuit board and a photovoltaic device. The circuit board includes one or more on-board electronic components and an upper surface configured as a substrate. The photovoltaic device is integrally deposited on the upper surface of the circuit board and electrically connected to the one or more on-board electronic components, wherein the upper surface of the circuit board is a photovoltaic device substrate.
    Type: Grant
    Filed: December 22, 2015
    Date of Patent: February 14, 2017
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Talia S. Gershon, Richard A. Haight, James B. Hannon, Teodor K. Todorov
  • Patent number: 9549140
    Abstract: An image sensor includes a row driver, a pixel array, an analog-to-digital converter, and an output compensating circuit. The row driver generates a photo-gate control signal, a storage control signal, a transfer control signal, a reset control signal and a row selecting signal. The pixel array includes a plurality of pixels, and each pixel uses a deep trench isolation (DTI) region as a photo gate. The pixel array receives optical signals, converts the optical signals to electric signals, and outputs the electric signals as image signals in response to the photo-gate control signal, the storage control signal, the transfer control signal, the reset control signal, and the row selecting signal. The analog-to-digital converter performs an analog-to-digital conversion on the image signals to generate first signals, and the output compensating circuit compensates the first signals.
    Type: Grant
    Filed: February 11, 2015
    Date of Patent: January 17, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-Woo Jung, Kyung-Ho Lee
  • Patent number: 9546884
    Abstract: A sensor comprising a silicon substrate having a first and a second surface, integrated circuitry provided on the first surface of the silicon substrate, and a sensor structure provided on the second surface of the silicon substrate. The sensor structure and the integrated circuitry are electrically coupled to each other.
    Type: Grant
    Filed: September 24, 2010
    Date of Patent: January 17, 2017
    Assignee: NXP B.V.
    Inventors: Roel Daamen, Aurelie Humbert, Matthias Merz, Youri Victorovitch Ponomarev
  • Patent number: 9521350
    Abstract: A solid-state imaging device includes a pixel region in which shared pixels which share pixel transistors in a plurality of photoelectric conversion portions are two-dimensionally arranged. The shared pixel transistors are divisionally arranged in a column direction of the shared pixels, the pixel transistors shared between neighboring shared pixels are arranged so as to be horizontally reversed or/and vertically crossed, and connection wirings connected to a floating diffusion portion, a source of a reset transistor and a gate of an amplification transistor in the shared pixels are arranged along the column direction.
    Type: Grant
    Filed: December 29, 2015
    Date of Patent: December 13, 2016
    Assignee: Sony Corporation
    Inventors: Hideo Kido, Atsuhiko Yamamoto, Akihiro Yamada
  • Patent number: 9477106
    Abstract: The present invention provides an array substrate of LCD display and a manufacturing method thereof, the array substrate comprises a transparent substrate, gate lines and data lines which are disposed on the transparent substrate, wherein the array substrate further comprises: a transparent conducting bar and a gate short-circuit bar which are disposed on the transparent substrate, said transparent conducting bar is disposed below said gate short-circuit bar, said gate short-circuit bar and said data lines are arranged in a same layer. The present invention can avoid the problem of burning the gate short-circuit bar due to the occurrence of static discharge, the electrical defects in the array substrate can be normally detected and repaired in the array test process, thus the qualified product rate of the array substrate of LCD display is improved.
    Type: Grant
    Filed: December 11, 2013
    Date of Patent: October 25, 2016
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., BEIJING BOE DISPLAY TECHNOLOGY CO., LTD.
    Inventors: Xiaming Zhu, Liang Sun, Jianfeng Yuan, Seung Moo Rim, Xibin Shao
  • Patent number: 9466745
    Abstract: A method of manufacturing a composite quantum-dot photodetector formed by alternatively dipping a substrate into a colloidal solution containing at least one type of a quantum dot, thereby forming a monolayer of the quantum dots and then dipping the substrate with the monolayer of the quantum dots into a ligand spacing solution to build a film of the quantum dots and then alternatively exposing the film of the quantum dots to a vapor and an infill material.
    Type: Grant
    Filed: December 11, 2015
    Date of Patent: October 11, 2016
    Assignee: Vadient Optics, LLC
    Inventors: George Williams, Thomas Eugene Novet, David M. Schut, Ngoc Thanh Nguyen, Spencer J. H. Alexander
  • Patent number: 9450013
    Abstract: A planar photodiode array including a useful layer made of CdxHg1-xTe. The useful layer includes at least two superimposed doped layers, each interface between two doped layers forming a single PN junction; the useful layer has at least one separation region, extending from the upper face of the useful layer, and separating at least two useful volumes while going through the PN junction; and beyond a predetermined depth in the useful layer, the average cadmium concentration in the useful volumes is less than the average cadmium concentration in the separation region.
    Type: Grant
    Filed: July 9, 2015
    Date of Patent: September 20, 2016
    Assignee: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Laurent Mollard, Francois Boulard, Guillaume Bourgeois
  • Patent number: 9412784
    Abstract: The present disclosure illustrates a pre-flash time adjusting circuit. The pre-flash time adjusting circuit comprises a first pre-flash time adjusting unit coupled to an image sensing array. The image sensing array comprises a plurality of pixel units. The first pre-flash time adjusting unit comprises a switching module and a storage capacitor. When the image sensing array senses a light beam, the switching module selectively connects a first switch and the storage capacitor, such that the storage capacitor starts to charge the first pixel units of the first pixel group, until base-emitter voltages of a plurality of bipolar junction transistors disposed in the first pixel units reaches a stable state.
    Type: Grant
    Filed: October 2, 2015
    Date of Patent: August 9, 2016
    Assignee: PIXART IMAGING (PENANG) SDN. BHD.
    Inventor: Wooi-Kip Lim
  • Patent number: 9385151
    Abstract: A manufacturing method for an edge illuminated type photodiode has: a process of forming an impurity-doped layer of a first conductivity type in each of device forming regions in a semiconductor substrate; a process of forming an impurity-doped layer of a second conductivity type in each of the device forming regions; a process of forming a trench extending in a direction of thickness of the semiconductor substrate from a principal surface, at a position of a boundary between adjacent device forming regions, by etching to expose side faces of the device forming regions; a process of forming an insulating film on the exposed side faces of the device forming regions; a process of forming an electrode for each corresponding impurity-doped layer on the principal surface side of the semiconductor substrate; and a process of implementing singulation of the semiconductor substrate into the individual device forming regions.
    Type: Grant
    Filed: February 20, 2015
    Date of Patent: July 5, 2016
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Hiroshi Oguri, Yoshitaka Ishikawa, Akira Sakamoto, Tomoya Taguchi, Yoshimaro Fujii