Abstract: An electronic device has a semiconductor chip and a passive component, whose electrical values can be varied. The semiconductor chip is electrically conductively connected to a rewiring structure that, together with the semiconductor chip and with the passive component, is enclosed by a housing made of plastic. A method for producing the electronic device is also described.

Abstract: A semiconductor device has a resin package layer on a principal surface of a semiconductor chip, on which a number of bump electrodes are formed, wherein the semiconductor device has a chamfer surface or a stepped surface on a top edge part such that the external shock or stress applied to such an edge part is dissipated by the chamfer surface of the stepped surface.

Abstract: An integrated circuit carrier includes a receiving zone including electrical contacts for receiving an integrated circuit. Islands and voids extend across the carrier to reduce the ridigity of the carrier. Adjacent islands are connected by bridging portions in the form of serpentine members.

Abstract: An array of semiconductor circuit elements such as light-emitting elements includes a semiconductor layer partially covered by a dielectric film. A first interconnecting pad such as a wire-bonding pad is electrically coupled by conductive paths passing through the semiconductor layer to electrodes of a first group of semiconductor circuit elements formed in the semiconductor layer. A second interconnecting pad such as a wire-bonding pad, formed on the dielectric film, is electrically coupled to electrodes of a second group of semiconductor circuit elements formed in the semiconductor layer by conductive paths insulated from the semiconductor layer by the dielectric film. The second conductive paths cross the first conductive paths at points at which the first conductive paths pass through the semiconductor layer, so that only a single layer of metal interconnecting lines is needed.

Abstract: First and second chips each having a transistor are provided. The first chips are arranged along a first axis on a first metallic body in side-by-side and interspaced manner. The second chips are arranged parallel to the first axis on a second metallic body in a side-by-side and interspaced manner. The second chips are arranged perpendicular to the first axis opposite an area of the first body and are each connected to the opposite area via at least one bonding connection. The first chips, with regard to the third axis, are arranged opposite an area of the second body, which is located between adjacent second chips. A third metallic body is arranged on the second body and comprises projections each of which being arranged on one of the areas of the second body. The first chips are each connected to the opposite projection via at least one bonding connection.

Abstract: The wiring board having terminals disclosed in this invention is aimed at providing a narrow pitch and downsized design for connecting circuit boards of various kinds of electronic devices. Each terminal 11 has an L-shaped or bar-shaped coupling section 11A having an uneven shape and held between a top substrate 6 and a bottom substrate 1.

Abstract: An amorphous dielectric material having a dielectric constant of 10 or greater is provided herein for use in fabricating capacitors in integrated circuit applications. The amorphous dielectric material is formed using temperatures below 450° C.; therefore the BEOL metallurgy is not adversely affected. The amorphous dielectric material of the present invention exhibits good conformality and a low leakage current. Damascene devices containing the capacitor of the present invention are also disclosed.

Abstract: A configuration of conductive bumps on a flip chip and a redistribution layer is disclosed. The configuration comprise: a plurality of power bumps and ground bumps disposed in hive-shaped arrangement on the core of a flip chip; a plurality of power lines slanted by 60-degree angle, relative to a horizontal line, for connecting power bumps; and a plurality of ground lines slanted by 60-degree angle, relative to a horizontal line, for connecting ground bumps. The conductive bumps of the second embodiment are disposed in a checkerboard arrangement. The conductive bumps of the third embodiment are disposed in a staggered arrangement, and the power bumps and the ground bumps are respectively connected by power lines and ground lines, which are slanted in 45-degree angle, relative to a horizontal line. The power lines and the ground lines are in the redistribution layer.

Abstract: A method for forming within a substrate employed within a microelectronics fabrication an electrical interconnection cross-over bridging between conductive regions separated by non-conductive regions formed within the substrate. There is formed over a substrate provided with conductive and non-conductive regions a blanket dielectric layer and a blanket polysilicon layer. After patterning the polysilicon and dielectric layers. A portion of the dielectric layer at the periphery of the polysilicon layer is etched away, leaving a gap between the polysilicon patterned layer and the underlying substrate contact region. There is formed over the substrate a layer of refractory metal and after rapid thermal annealing, there is formed a surface layer of refractory metal silicide over the surfaces of the polysilicon layer and within the gap between the polysilicon layer and the substrate, completing the electrical connection.

Abstract: A method for designing an input output cell of an integrated circuit. The input output cell has a required area, a width, and a height. The bonding pad pitch length between adjacent bonding pads of the integrated circuit is measured. The width of the input output cell is specified to be substantially equal to the bonding pad pitch length. The required area is divided by the width to determine a first value, and the height of the input output cell is specified to be substantially equal to the first value. In this manner, the width of the input output cells is no greater than the distance between two adjacent bonding pads, and thus the input output cells can be placed very close together, facilitating their use in input output limited integrated circuit designs. However, the height of the input output cells is no greater than is necessary to enclose the required area of the input output cell, thus facilitating their use in core limited integrated circuit designs.

Abstract: A bitline contact and method of forming bitline contact for a vertical DRAM array using a bitline contact mask. In the method, gate conductor lines are formed. An oxide layer is deposited over the gate conductor lines, and a bitline contact mask is formed over portions of the oxide layer. The bitline contact mask is etched, and a silicon layer is deposited on the substrate. A bitline layer is deposited on the silicon layer. A masking and etching operation is performed on the bitline layer. A M0 metal is deposited over the silicon layer and on sides of non etched portions of the bitline (M0) layer to form left and right bitlines.

Abstract: There are provided a plurality of first connection lines arranged in parallel with each other in a same layer, each connecting to a different contact portion; a plurality of second connection lines arranged in parallel with each other in the same layer as the first connection lines, the first connection lines and the second connection lines being arranged in an alternating fashion, and each of the second connection lines connecting to a different contact portion; a plurality of first metal wiring lines connecting to the first connection lines via first plugs; and a plurality of second metal wiring lines formed in a layer different from that of the first metal wiring lines, and connecting to the second connection lines via second plugs, the first metal wiring lines and the second metal wiring lines differing from each other with respect to at least one of thickness and width, or with respect to resistivity of wiring materials, and a product of a wiring capacitance between adjacent two of the first metal wiring

Abstract: To significantly reduce parasitic capacitance of component's landing pad, the present invention forms patterned holes in reference potential layers below the pad, thus effectively increasing the dielectric distance between the pad and the reference potential planes below the pad, raising the characteristic impedance of the pad above that of the trace connected to the pad. A controlled amount of parasitic capacitance is re-introduced to the pad by forming at least one grounded metal plate adjacent to the pad, bringing the characteristic impedance of the pad to substantially match that of the trace. The distance of the metal plates from the pad, and the configuration of the patterned holes are predetermined to substantially match the pad's impedance with that of the trace.

Abstract: An integrated circuit interconnect is provided having a dielectric layer disposed between a wide top metal line and a wide bottom metal line. A via-sea in the dielectric layer connects the wide top and wide bottom metal lines by means of a first via having a width, a second via having a width and spaced more than two widths away and less than four widths away from the first via.

Abstract: A semiconductor device includes a first insulating layer having a through hole; a first interconnection having a first conductive layer, a first barrier layer, and a first main interconnection; and a second interconnection connected to one of the first conductive layer and the first barrier layer. Accordingly, a problem wherein copper in the first main interconnection transfers from a connection portion thereof to the second interconnection due to electromigration, so that a void is formed at the connected portion resulting in the first interconnection being disconnected from the second interconnection, can be prevented.

Abstract: There are provided a high density and low manufacturing cost wiring board with high reliability in connection, a semiconductor device and a producing method therefor. The invention relates to a wiring board comprising a board having an electrode and being coated with an insulation layer with a hole for exposing the electrode; a wiring consisting of a Cr or Ti layer, which is connected to the electrode and closely contacts with the insulation layer, and of a Cu layer which is closely contacts with the Cr or Ti layer; a protective film which covers the wiring and is provided with another hole for soldering; and a solder for the outer connection which is mounted in the both holes and brought to diffuse into the Cu layer to produce an alloy, and brought to reach the Cr or Ti layer thereby connecting the solder to the Cr or Ti layer.

Abstract: After formation of Cu interconnections 46a to 46e each to be embedded in an interconnection groove 40 of a silicon oxide film 39 by CMP and then washing, the surface of each of the silicon oxide film 39 and Cu interconnections 46a to 46e is treated with a reducing plasma (ammonia plasma). Then, without vacuum break, a cap film (silicon nitride film) is formed continuously. This process makes it possible to improve the dielectric breakdown resistance (reliability) of a copper interconnection formed by the damascene method.

Abstract: There is disclosed a semiconductor device comprising a substrate, a first insulating film which is provided above the substrate and has a relative dielectric constant which is at most a predetermined value, a second insulating film which is provided on a surface of the first insulating film and has a relative dielectric constant greater than the predetermined value, a wire which is provided in a recess for the wire, which is formed passing through the second insulating film and extending into the first insulating film, and a dummy wire provided in a recess for the dummy wire, which is formed passing through the second insulating film and extending into the first insulating film, and is located in a predetermined area spaced from an area where the wire is provided.

Abstract: The semiconductor device comprises an interconnection layer 14 formed on a substrate 10, a cap insulation film 22 formed on the upper surface of the interconnection layer 14, and a sidewall insulation film which is formed on the side walls of the interconnection layer 14 and the cap insulation film 22 and which includes a larger layer number of insulation films 24, 26 28 covering the side wall of the interconnection layer 14 at the side wall of the cap insulation film 22 than a layer number of insulation films 24, 26 at the side wall of the cap insulation film 22. Accordingly, the sidewall insulation film can be thickened at the side wall of the interconnection layer 14, whereby a parasitic capacitance between the interconnection layer 14 and the electrodes 32 adjacent to the interconnection layer 14 through the sidewall insulation film can be low.

Abstract: An integrated circuit having signal traces, power traces, and ground traces. The signal traces are disposed on at least one signal distribution layer, and the signal traces on the at least one signal distribution layer are formed at no more than a first thickness. The power traces and ground traces are formed on at least one power ground distribution layer, where the at least one power ground distribution layer is an overlying layer of the integrated circuit relative to the at least one signal distribution layer. The power traces and ground traces on the at least one power ground distribution layer are formed at no less than a second thickness that is greater than the first thickness of the signal traces. In this manner, the signal traces, which can be formed with a relatively thin thickness, can be placed very close together on the signal distribution layers, and have sufficient conductivity for the signals transmitted thereon.

Abstract: First wirings are disposed along a straight line in one row or one column of memory cell arrays. A second wiring is disposed above the first wirings and transmits a signal from one end of the second wiring to the other end thereof. Contact plugs connect the first wirings and the second wiring to each other. The first wirings are connected to a plurality of successive memory cells among all the memory cells in the row or column to which the first wirings belong. In case such an LSI is manufactured and defect analysis is made to thereby form an FBM, it is decided that the contact plugs connecting the first wirings to the second wiring are disconnected when a plurality of successive memory cells in one row or one column. Thus, a plurality of defects are expressed by the use of different categories.

Abstract: The present invention is a method and structure for placing resistive circuits underneath a bonding pad in integrated circuit devices such that the resistive circuits are protected from shear and compressive stresses during bonding processes. The resistor is a serpentine wire pattern. A bonding pad is formed above the resistor such that the serpentine pattern extends over the entire bond pad area. The method and structure allow the formation of IC devices with smaller die areas.

Abstract: A circuit package and a method of forming the same that facilitates control of the impedance of a driving circuit employing resistive vias formed into a dielectric substrate.

Abstract: A mark-shaped pad. A bonding pad structure with at least one mark-shaped bonding pad comprises: a bottom metal layer disposed over the surface of a rectangular semiconductor substrate to connect the circuit electrically, an inter-metal dielectric layer disposed over the bottom metal layer, metal plugs formed in the inter-metal dielectric layer to connect with the bottom metal layer, a top metal layer disposed over the inter-metal dielectric layer connecting with the metal plugs, and a passivation layer disposed over the top metal layer with openings to expose the top metal layer portions as bonding pads, wherein at least one bonding pad is mark-shaped, e.g. “”, “”, “” or “”, to indicate the orientation of the bonding pads on the rectangular semiconductor substrate.

Abstract: An improved dual damascene structure is provided for use in the wiring-line structures of multi-level interconnects in integrated circuit. In this dual damascene structure, low-K (low dielectric constant) dielectric materials are used to form both the dielectric layers and the etch-stop layers between the metal interconnects in the IC device. With this feature, the dual damascene structure can prevent high parasite capacitance to occur therein that would otherwise cause large RC delay to the signals being transmitted through the metal interconnects and thus degrade the performance of the IC device. With the dual damascene structure, such parasite capacitance can be reduced, thus assuring the performance of the IC device.

Abstract: A multichip wirebond-less integrated circuit and power die package is based on a folded single-layer flex circuit. The package is formed with metal-studbumped power dies and IC's flipchiped to a patterned flex substrate. Extensions of the flex substrate are folded and attached to the backside of the dies for electrical and/or thermal contact. I/O pins are along the periphery of the package for standard SMT mounting while heatspreaders are attached to both sides of the package for double-sided cooling.

Abstract: A wire connection structure for an integrated circuit (IC) die includes a semiconductor wafer with an active device and/or a passive device. One or more dielectric layers are arranged adjacent to the active and/or passive device. One or more metal interconnect layers are arranged adjacent to the active and/or passive device. A contact pad is arranged in an outermost metal interconnect layer. A passivation layer is arranged over the outermost metal interconnect layer and includes at least one passivation opening that exposes the contact pad. A bond pad is arranged over the passivation layer and the active and/or passive device and is connected to the contact pad through the passivation opening. Formation of the bond pad does not damage the active and/or passive device.

Abstract: A method of manufacturing a semiconductor laser device includes the steps of: providing a laser chip, in which a semiconductor layer is formed on a substrate, a supporting plate which supports the laser chip, a mounting plate, a first solder film positioned between the laser chip and the mounting plate and a second solder film positioned between the mounting plate and the supporting plate to form a stacked laser chip structure; applying heat to the stacked laser chip structure sufficient to melt the first solder film and the second solder film; and, applying pressure to the stacked laser chip structure during the heating step to cause simultaneous adhering of the laser chip, the mounting plate and the supporting plate to each other.

Abstract: On the circuit surfaces of integrated circuit chips, there are adjacently laid out a power source pad for a power source wire at a plus voltage side and a power source pad for a power source wire at a minus voltage side. On a single-surface printed wiring board, a first set of two power source wires and a second set of two power source wires are flip-chip mounted with two power source pads of the integrated circuit chips respectively. The first and second sets of the power source wires are formed substantially in parallel with each other, by maintaining substantially constant wire widths and substantially constant wire interval. Near the outer periphery of the printed wiring board, the first and second sets of the power source wires are bent smoothly to follow the periphery.

Abstract: A semiconductor package includes a lead frame having a displaced integral strap which is cupped out of a lead frame plane to provide a nest that receives a semiconductor chip electrically connected to an inner surface of the cupped strap. The semiconductor package further has a housing molded over and encapsulating the semiconductor chip with the frame such that a surface of the semiconductor chip facing away from the cupped strip is flush with or protrudes beyond a bottom of the housing.

Abstract: A method in which an alignment tool consisting of a nest and guide tool is used to align an LGA module in the nest and then the LGA module is removed from the nest and aligned with a circuit card by the use of the guide tool.

Abstract: There is provided a semiconductor device in a package structure that can improve reliability. The semiconductor device comprises a semiconductor chip having an upper electrode and a lower electrode formed thereon; a package base bonded to the lower electrode on the semiconductor chip; and a metallic strap having first and second ends bonded through solders to the upper electrode on the semiconductor chip and a package lead. The first end of the metallic strap is bonded to the upper electrode in such a manner that a gap therebetween gradually becomes wider in a portion close to the semiconductor chip's edge toward said second end of said metallic strap.

Abstract: Provided is, for example, a method for the fabrication of electrical interconnects in semiconductor devices wherein a substrate including two or more transistors having gate regions wherein the gate regions are not exposed (e.g., the gate regions are completely covered by an insulating cap) is provided. An insulating layer overlying the transistors and the active areas is deposited, where upon a hard mask is created and patterned to form a contact plug/interconnect opening over a first active area and a portion of a first transistor immediately adjacent the first active area. A spacer is formed within the contact plug/interconnect opening. Insulating material overlying active areas between transistors is removed. A portion of the gate region of the first transistor is then exposed and interconnect material is deposited within the contact plug/interconnect opening onto the exposed portion of the gate region of the first transistor and the first active area.

Abstract: A substrate for accommodating a passive component is proposed, including a core layer defined with a chip attach area and a trace forming area surrounding the chip attach area, with a solder mask layer being applied on the trace forming area. At least a pair of solder pads are formed on the trace forming area, and partly exposed to outside of the solder mask layer. The solder pads are each formed at a central position with an recess, allowing the core layer to be partly exposed through the recesses of the solder pads. For bonding a passive component to the solder pads, solder paste soldered on the solder pads forms a recessed top surface due to surface tension of the solder paste, and generates a downward and convergent dragging force for properly positioning the passive component on the solder pads without producing shifting or tombstone effect.

Abstract: There is a bi-level bit line architecture. Specifically, there is a DRAM memory cell and cell array that allows for six square feature area (6F2) cell sizes and avoids the signal to noise problems. Uniquely, the digit lines are designed to lie on top of each other like a double decker overpass road. Additionally, this design allows each digit line to be routed on both conductor layers, for equal lengths of the array, to provide balanced impedance. Now noise will appear as a common mode noise on both lines, and not as differential mode noise that would degrade the sensing operation. Furthermore, digit to digit coupling is nearly eliminated because of the twist design.

Abstract: The semiconductor device comprises: insulating films 40, 42 formed over a substrate 10; an interconnection 58 buried in at least a surface side of the insulating films 40, 42; insulating films 60, 62 formed on the insulating film 42 and including a hole-shaped via-hole 60 and a groove-shaped via-hole 66a having a pattern bent at a right angle; and buried conductors 70, 72a buried in the hole-shaped via-hole 60 and the groove-shaped via-hole 66a, wherein the groove-shaped via-hole 66a is formed to have a width which is smaller than a width of the hole-shaped via-hole 66. Whereby, the defective filling of the buried conductor is prevented, and the cracking of the inter-layer insulating film can be prevented. Steps on the conductor plug can be reduced, so that the step cannot be influential on the upper interconnection layers and insulating layers.

Abstract: A bitline contact and method of forming bitline contact for a vertical DRAM array using a bitline contact mask. In the method, gate conductor lines are formed. An oxide layer is deposited over the gate conductor lines, and a bitline contact mask is formed over portions of the oxide layer. The bitline contact mask is etched, and a silicon layer is deposited on the substrate. A bitline layer is deposited on the silicon layer. A masking and etching operation is performed on the bitline layer. A M0 metal is deposited over the silicon layer and on sides of non etched portions of the bitline (M0) layer to form left and right bitlines.

Abstract: An integrated circuit including a first signal line disposed on a semiconductor substrate, a second signal line disposed on a first dielectric layer, the first dielectric layer disposed on the semiconductor substrate, a third signal line disposed on a second dielectric layer, the second dielectric layer disposed on the first dielectric layer, and at least two vias connecting the first signal line to the second signal line, wherein the second signal line does not span the region directly beneath the third signal line, and wherein at least a portion of the first signal line extends into the region directly beneath the third signal line.

Abstract: Interconnections are formed over an interlayer insulating film which covers MISFETQ1 formed on the principal surface of a semiconductor substrate, while dummy interconnections are disposed in a region spaced from such interconnections. Dummy interconnections are disposed also in a scribing area. Dummy interconnections are not formed at the peripheries of a bonding pad and a marker. In addition, a gate electrode of a MISFET and a dummy gate interconnection formed of the same layer are disposed. Furthermore, dummy regions are disposed in a shallow trench element-isolation region. After such dummy members are disposed, an insulating film is planarized by the CMP method.

Abstract: A probe unit has a plurality of metal leads regularly juxtaposed on the surface of a substrate. Each metal lead has a resilient contact piece in a front portion of the lead, the resilient contact piece being spaced apart from the substrate surface or extending over an edge of the substrate. The cross sectional shape of the resilient contact piece is an arc shape and/or has a projection near at the distal end of the resilient contact piece.

Abstract: A bump arrangement of a flip-chip is disclosed. The bump arrangement comprises: a conductive bumps array formed at a core region of the flip-chip, a first ring of conductive bumps surrounding the conductive bumps array, a second ring surrounding the first ring, a third ring surrounding the second ring, and a fourth ring surrounding the third ring. In the four rings of bumps, the bumps of the third ring and the fourth ring are staggered each other and most of them are provided for I/O signal terminal so as to reduce the length conductive traces for I/O signal connection. The bumps in the first and the second ring are provided for power connection or ground connection. The first ring, the second ring, the third ring, the fourth ring and the bump at the core region are connected to conductive traces of an interconnection layer through a redistribution layer. The redistribution layer is located in between a passivation layer and the interconnection layer.

Abstract: A semiconductor integrated circuit 10 includes a semiconductor substrate 1, an insulating layer 2 formed on the semiconductor substrate 1, and a bonding pad 3 formed on the insulating layer 2. The semiconductor substrate 1 has a region 4 facing the bonding pad 3 and a region 5 substantially surrounding at least a part of the region 4. The region 5 of the semiconductor substrate 1 is set substantially at an equipotential.

Abstract: A semiconductor device in a computer system is disclosed that includes a die having an active surface bearing integrated circuitry, the die including a plurality of bond pads thereon at least some of which are connected to the integrated circuitry and having at least one electrically conductive wire bond made between first and second bond pads of the plurality of bond pads for providing external electrical connection between the two bond pads.

Abstract: A wire bond package for an integrated circuit die includes a first I/O core ring and a second I/O core ring formed in a first metal layer; a pad strap formed in a second metal layer overlapping the second I/O core ring; a via formed between the first metal layer and the second metal layer where the second I/O core ring and the pad strap overlap; a first core ring formed in a third metal layer overlapping the first I/O core ring; a via formed between the first metal layer and the third metal layer where the first I/O core ring and the first core ring overlap outside the power strap; a first power mesh formed in a fourth metal layer overlapping the first core ring; and a via formed between the third metal layer and the fourth metal layer where the first core ring and the first power mesh overlap.

Abstract: When a phase shift method is used as lithography where sense amplifiers are alternately placed in a one intersecting-point memory capable of implementing a reduction in the area of a DRAM, it was difficult to layout data lines in a boundary region between sense amplifiers and each memory array. Therefore, there is provided a semiconductor device according to the present invention. In the semiconductor device, two data lines continuous within the sub memory arrays or interposed therebetween are connected to the adjacent sense amplifiers as a system for drawing data lines from sub memory arrays (SMA) to sense amplifiers (SA) when the sense amplifiers are alternately placed. Namely, the number of data lines interposed between data lines respectively connected to two adjacent sense amplifiers is set to even numbers (0, 2, 4, . . . ).

Abstract: A semiconductor device is provided with a first insulating film, a first wiring layer formed in the first insulating film, a second insulating film formed above the first wiring layer and the first insulating film, the second insulating film including a low dielectric constant film, a second wiring layer formed in the second insulating film and coupled to the first wiring layer through a first connection section, and a third insulating film formed above the second wiring layer and the second insulating film and serving as one of an interlayer insulating film and a passivation film, and at least one of the first and third insulating films being one of a film formed mainly of SiON, a film formed mainly of SiN, and a laminated film being the films formed mainly of SiON or SiN respectively.

Abstract: Trace configurations for carrying high-speed digital differential signals provide for reduced conduction loss and improved signal integrity. In one embodiment, a circuit board has a first set of conductive traces disposed on nonconductive material, and a second set of conductive traces parallel to the first set and disposed within the conductive material. The second set is separated from the first set by non-conductive material. Corresponding traces of the first and second sets may be in a stacked configuration. In other embodiments, conductive material may be provided between corresponding traces of the first and second sets resulting in an “I-shaped” or “U-shaped” cross-section. In yet other embodiments, the trace configurations have “T-shaped” and “L-shaped” cross-sections.

Abstract: A wire width and a wiring space of each of signal wires 1 and ground/power wires 2 are determined to be a wire width W1 (the minimum wire width) and a wiring space S1, respectively. A wire width and a wiring space of the via-hole neighboring region 1a or 2a are determined to be a wire width W2 (>W1) and a wiring space S2 (<S1), respectively. The wire widths W1 and W2 and the wiring spaces S1 and S2 are respectively determined so as to maintain the minimum wiring pitch P. The wiring space S1 is determined also so as to satisfy {S1/P≧0.6}. Further, the signal wires 1 and the ground/power wires 2 have the same wire thickness of a wire thickness T1 which allows an aspect ratio (T1/W1) to be equal to, or higher than, 2.

Abstract: Interconnections are formed over an interlayer insulating film which covers MISFETQ1 formed on the principal surface of a semiconductor substrate, while dummy interconnections are disposed in a region spaced from such interconnections. Dummy interconnections are disposed also in a scribing area. Dummy interconnections are not formed at the peripheries of a bonding pad and a marker. In addition, a gate electrode of a MISFET and a dummy gate interconnection formed of the same layer are disposed. Furthermore, dummy regions are disposed in a shallow trench element isolation region. After such dummy members are disposed, an insulating film is planarized by the CMP method.

Abstract: A novel bi-level DRAM architecture is described which achieves significant reductions in die size while maintaining the noise performance of traditional folded architectures. Die size reduction results primarily by building the memory arrays with 6F2 or smaller memory cells in a type of cross-point memory cell layout. The memory arrays utilize stacked digitlines and vertical digitline twisting to achieve folded architecture operation and noise performance.