Abstract: A low loss on-die interconnect structure includes first and second differential signal lines on one of the metal layers of a microelectronic die. One or more traces may also be provided on another metal layer of the die that are non-parallel (e.g., orthogonal) to the differential signal lines. Because the traces are non-parallel, they provide a relatively high impedance return path for signals on the differential signal lines. Thus, a signal return path through the opposite differential line predominates for the signals on the differential lines. In one application, the low loss interconnect structure is used within an on-die salphasic clock distribution network.

Abstract: A conductive wiring layer structure, applied to the conductive wiring layer structure under bonding pads of a die. The die has a substrate and can be partitioned into a central core circuit and a peripheral bonding pad area. The conductive wire layer structure has a plurality of trapezium conductive wiring regions and a plurality of inverse trapezium conductive wiring regions alternately arranged in the bonding pad area. Each of the equilateral and inverse trapezium conductive wiring regions has a plurality of dielectric layers and a plurality of conductive wiring layers alternately overlaying each other on the substrate. The conductive wiring layers of the trapezium conductive wiring region are wider as approaching the substrate, and become narrower as distant away from the substrate. The conductive wiring layers of the inverse trapezium conductive wiring region are narrower as approaching the substrate, and wider as distant away from the substrate.

Abstract: A semiconductor device having: a semiconductor substrate with an isolation region defining a plurality of active regions; a gate electrode formed above each active region, constituting a semiconductor element; an interlevel insulator covering the gate electrode; local interconnects formed through the interlevel insulator and electrically connected to the semiconductor element; local interconnect dummies formed through the interlevel insulator and electrically separated from the local interconnects; and lower level dummies, each comprising either one of an active region dummy, a laminated dummy of an active region dummy and a gate electrode dummy formed thereon, and a gate electrode dummy formed on the isolation region, wherein each of the local interconnect dummies is not connected to two or more lower level dummies.

Abstract: An integrated circuit has a metal layer that includes conductors to provide interconnectivity for components of the integrated circuit chip. The metal layer is divided into at least two sections, such that a first section has a preferred direction and the second section has a preferred wiring direction that is different from the first preferred direction. The first and second preferred directions on a single metal layer may consist of any direction. The metal layer may be divided into more than two sections, wherein each section has a preferred wiring direction. Wiring geometries for multi-level metal layers are also disclosed.

Abstract: A semiconductor device in a computer system is disclosed that includes a die having an active surface bearing integrated circuitry, the die including a plurality of bond pads thereon connected to the integrated circuitry. At least one electrically conductive wire bond is made between first and second bond pads of the plurality of bond pads for providing external electrical connection between the two bond pads, which are not interconnected via the integrated circuitry within the die.

Abstract: A transistor (10) is formed as a matrix of transistor cells (13) that have drain metal strips (50) for contacting drains (15) of the transistor cells and source metal strips (55) for contacting sources (35) of the transistor cells. An interconnect layer (1030) overlying the matrix of transistor cells has first portions (201) that contact one the drain metal strips with first and second vias (79) and second portions (101) that contact one of the source metal strips with third and fourth vias (78).

Abstract: A conductive film made of Al or alloy containing Al as a main component is formed on an underlying substrate. An upper conductive film is disposed on the conductive film. A first opening is formed through the upper conductive film. An insulating film is disposed on the upper conductive film. A second opening is formed through the insulating film. An inner wall of the second opening is retreated from an inner wall of the first opening. An ITO film is formed covering a partial upper surface of the insulating film and inner surfaces of the first and second openings, and contacting a partial upper surface of the upper conductive film at a region inside of the second opening. Good electrical contact between an Al or Al alloy film and an ITO film can be established and productivity can be improved.

Abstract: A method for manufacturing a semiconductor device includes (a) forming electrical interconnections over a surface of a semiconductor substrate having integrated circuits, (b) providing a plurality of bonding pads disposed on the surface of the semiconductor substrate, (c) electrically connecting the electrical connections to respective bonding pads of the plurality of bonding pads, (d) electrically connecting the plurality of bonding pads to each of the integrated circuits, (e) forming resin layers so as to cover the electrical interconnections, (f) forming concave portions by a first process, each of the concave portions being disposed in a corresponding portion of the resin layers that cover the electrical interconnections, (g) curing the resin layers having the concave portion, (h) forming through-holes by removing bottoms of the concave portions by a second process that differs from the first process and (i) forming external connection terminals, each being disposed on a corresponding area of the electric

Abstract: Arrangements and methods of packaging integrated circuits in leadless leadframe packages configured for maximizing a die size are disclosed. The package is described having an exposed die attach pad and a plurality of exposed contacts formed from a common substrate material. The contacts, however, are thinned relative to the die attach pad. In one embodiment, an inner region of the contacts is thinned. In another embodiment, an outer region of the contacts is also thinned. A die is mounted on the die attach pad and wire bonded to the contacts. Since the inner region and sometimes together with the outer region of the contact are lower than the die attach pad being wire bonded to, the size of the die can be relatively increased to overhang over the contact, thereby maximizing the die size in the package. A plastic cap is molded over the die, contacts, and bonding wires while leaving the bottom surface of the contacts exposed.

Abstract: A semiconductor device has first wiring layers 30 and a plurality of dummy wiring layers 32 that are provided on the same level as the first wiring layers 30. The semiconductor device defines a row direction, and first virtual linear lines L1 extending in a direction traversing the row direction. The row direction and the first virtual linear lines L1 define an angle of 2-40 degrees, and the dummy wiring layers 32 are disposed in a manner to be located on the first virtual linear lines L1. The semiconductor device also defines a column direction perpendicular to the row direction, and second virtual linear lines L2 extending in a direction traversing the column direction. The column direction and the second virtual linear lines L2 define an angle of 2-40 degrees, and the dummy wiring layers 32 are disposed in a manner to be located on the second virtual linear lines L2.

Abstract: A semiconductor integrated circuit includes pads, a first power supply I/O cell which is connected to an external pin through a corresponding one of the pads, and a second power supply I/O cell which is not connected to an external pin through a corresponding one of the pads, but receives power supply from the first power supply I/O cell.

Abstract: A new digital follower device is achieved. The digital follower device comprises an n-channel vertical FET device and a p-channel vertical FET device. Each vertical FET device comprises a bulk region in a semiconductor substrate. The bulk region comprises a first doping type. A STI region is in the bulk region. A drain region is on a first side of the STI region. The drain region overlies the bulk region. The drain region comprises the first doping type. A gate region is on a second side of the STI region. The gate region comprises the first doping type. A voltage on the gate region controls a vertical channel in the bulk region. A buried region is between the gate region and the bulk region. The buried region comprises a second doping type. The n-channel FET device drain and the p-channel FET device drain are connected together. The n-channel FET device gate and the p-channel FET device gate are connected together.

Abstract: An interconnection device has a substrate that includes a conductive trace having an exposed portion at an edge of the substrate. The exposed portion is tapered toward the edge of the substrate. The exposed portion is provided for direct physical contact with a second conductive trace exposed at an edge of a second substrate. A high frequency direct electrical interconnection is thereby provided that reduces the disadvantageous effects of lateral, longitudinal, and co-planar misalignment between the conductive traces.

Abstract: An integrated circuit arrangement includes at least one electrical conductor that, when a current flows through it, produces a magnetic field that acts on at least a further part of the circuit configuration, wherein seen in cross-section, the electrical conductor has at least one recess or depression, or a region of reduced conductivity on the side facing that part, in order to influence the magnetic field that can be produced.

Abstract: An integrated circuit has a metal layer that includes conductors to provide interconnectivity for components of the integrated circuit chip. The metal layer is divided into at least two sections, such that a first section has a preferred direction and the second section has a preferred wiring direction that is different from the first preferred direction. The first and second preferred directions on a single metal layer may consist of any direction. The metal layer may be divided into more than two sections, wherein each section has a preferred wiring direction. Wiring geometries for multi-level metal layers are also disclosed.

Abstract: Thermo-mechanical stress on vias is reduced, thereby reducing related failures. This can be done by maintaining a via-to-metal area ratio at least as large as a predetermined value below which the additional stress on the vias does not significantly increase.

Abstract: A method and structure to reduce electromigration failure of semiconductor interconnects. In various embodiments, the area around a via is selectively doped with metallic dopants. The method and resulting structure reduce electromigration failure without adding unnecessary, performance-degrading resistance.

Abstract: An integrated circuit has a metal layer that includes conductors to provide interconnectivity for components of the integrated circuit chip. The metal layer is divided into at least two sections, such that a first section has a preferred direction and the second section has a preferred wiring direction that is different from the first preferred direction. The first and second preferred directions on a single metal layer may consist of any direction. The metal layer may be divided into more than two sections, wherein each section has a preferred wiring direction. Wiring geometries for multi-level metal layers are also disclosed.

Abstract: Multi-concentric pad (MCP) arrangements provide for increased pad densities on integrated circuits. The multi-concentric pad (MCP) configuration includes a first set of input output (IO) pads and a second set of IO pads, both disposed on an integrated circuit die. Each IO pad in said first set and said second set of IO pads includes a bond pad for receiving a bond wire connection, and an IO circuit coupled to the bond pad. The IO circuits provide an interface between a signal received at the corresponding bond pad and a core circuit disposed on said IC die. The first set of IO pads are arranged closer to the perimeter of the IC die than the second set of IO pads. Furthermore, the second set of IO pads are arranged so that each IO circuit in the second set of IO pads is closer to the center of the IC die than a corresponding IO circuit in the first set of IO pads.

Abstract: An integrated circuit has a metal layer that includes conductors to provide interconnectivity for components of the integrated circuit chip. The metal layer is divided into at least two sections, such that a first section has a preferred direction and the second section has a preferred wiring direction that is different from the first preferred direction. The first and second preferred directions on a single metal layer may consist of any direction. The metal layer may be divided into more than two sections, wherein each section has a preferred wiring direction. Wiring geometries for multi-level metal layers are also disclosed.

Abstract: A plurality of lands are arranged in rows. The lands in adjacent rows are disposed in a staggered arrangement. A first interconnecting line is pulled out from each of the lands. Each of the lands is wider than the first interconnecting line in the row direction. A plurality of electrical connection sections are arranged in rows. The electrical connection sections in adjacent rows are disposed in a staggered arrangement. The lands are electrically connected with the electrical connection sections so as to overlap. Each of the electrical connection sections is a part of a second interconnecting line, and an insulating layer is formed between the second interconnecting lineing pattern other than the electrical connection sections and the first interconnecting lineing pattern.

Abstract: A display panel comprises the following elements. A pixel array arranged by a plurality of pixel devices is applied for producing images according to input signals. A plurality of COG chips are fabricated on a peripheral region of the display panel and connected in series wherein the COG chips can convey the input signals to the pixel array for driving selected the pixel devices. A plurality of WOA lines are defined on the display panel for connecting the COG chips in series to transfer the input signals. And a first bypassing bus is fabricated aside the COG chips and connected separately to two different WOA lines for connecting with at least one the COG chip in parallel so as to bypass the input signals.

Abstract: When a phase shift method is used as lithography where sense amplifiers are alternately placed in a one intersecting-point memory capable of implementing a reduction in the area of a DRAM, it was difficult to layout data lines in a boundary region between sense amplifiers and each memory array. Therefore, there is provided a semiconductor device according to the present invention. In the semiconductor device, two data lines continuous within the sub memory arrays or interposed therebetween are connected to the adjacent sense amplifiers as a system for drawing data lines from sub memory arrays (SMA) to sense amplifiers (SA) when the sense amplifiers are alternately placed. Namely, the number of data lines interposed between data lines respectively connected to two adjacent sense amplifiers is set to even numbers (0, 2, 4, . . . ).

Abstract: A microelectromechanical system (MEMS) based sensor comprises: a substrate defining a plane; a first conductive material layer having a first stress, a first portion of the first conductive material layer being connected to the substrate and extending in a substantially parallel direction to the plane defined by the substrate and a second portion being disconnected from the substrate and extending in a substantially non-parallel direction to the plane defined by the substrate; and a sensor material layer formed over at least the second portion of the first conductive material layer, the sensor material layer having a second stress that is less than the first stress of the first conductive material layer. The stresses form a stress gradient that bends the second portion of the first conductive material layer and the sensor material layer formed over the second portion of the first conductive material layer away from the substrate.

Abstract: Even where an I/O cell requiring good characteristics is alloted to an I/O slot corresponding to the uppermost standard pattern wiring, a pad can be connected to the I/O slot by forming rewiring in the chip outermost peripheral area.

Abstract: A method of aligning a plurality of empty-spaced buried patterns formed in semiconductor monocrystalline substrates is disclosed. In an exemplary embodiment, high-temperature metal marks are formed to include a conductive material having a melting temperature higher than an annealing temperature used to form such empty-spaced buried patterns. The high-temperature metal marks are formed prior to the formation of the empty-spaced buried patterns formed in a monocrystalline substrate, so that the empty-space buried patterns are aligned to the marks. Subsequent semiconductor structures that are formed as part of desired semiconductor devices can be also aligned to the marks.

Abstract: A 3-D spiral stacked inductor is provided having a substrate with a plurality of turns in a plurality of levels wherein the number of levels increases from an inner turn to the outer turn of the inductor. First and second connecting portions are respectively connected to an inner turn and an outermost turn, and dielectric material contains the first and second connecting portions and the plurality of turns over the substrate.

Abstract: A dummy structure pattern for fabricating a substantially planar surface within an inactive region of a semiconductor topography is provided. In particular, a semiconductor topography is provided which includes an inactive region comprising a sacrificial annular dummy structure configured to surround an area larger than a square of a minimum critical dimension of a device arranged within an active region of the semiconductor topography. In a preferred embodiment, the area is exclusively designated for a formation of an isolation structure within the semiconductor substrate of the semiconductor topography. As such, a semiconductor topography is provided which includes a separate isolation structure arranged within a spacing of a contiguous isolation structure, which is arranged in a grid pattern within a portion of a semiconductor substrate. Moreover, a semiconductor device is provided which includes an inactive region with a plurality of similarly sized and uniformly arranged annular diffusion regions.

Abstract: A semiconductor device mainly comprises a chip disposed on the upper surface of a substrate. The upper surface of the substrate is provided with a ground ring, a power ring, and a plurality of conductive traces arranged at the periphery of the ground ring and the power ring. The semiconductor device comprises at least a surface-mountable device connected across the ground ring and the power ring. The semiconductor device of the present invention is characterized by having at least a bonding wire formed across the surface-mountable device. The bonding wire is connected between one of the bonding pads of the chip and the power ring wherein at least one downward depression is formed in a lengthen portion at a top of the bonding wire.

Abstract: A semiconductor device includes a semiconductor device body section having a substrate and an electrode formed on the substrate. A through-hole is formed through the electrode and the substrate in a stacking direction of the electrode and the substrate, and a conductive member is inserted into the through-hole. An insulating material which faces at least the through-hole is formed on the electrode. The conductive member is formed over the insulating material from the through-hole and is connected with the electrode.

Abstract: An interconnection is provided with a dummy interconnection connected to an interconnection body, and the dummy interconnection is provided with a stress concentration portion in which tensile stress higher than that of the interconnection body is generated. In proximity to the stress concentration portion, an insulating film formed by high-density plasma CVD is provided, and the tensile stress is generated in the stress concentration portion by the insulating film. With this structure, the occurrence of a void can be prevented at any position in the interconnection body.

Abstract: A method for forming conductive contacts and interconnects in a semiconductor structure, and the resulting conductive components are provided. In particular, the method is used to fabricate single or dual damascene copper contacts and interconnects in integrated circuits such as memory devices and microprocessor.

Abstract: A semiconductor device has an insulating film. An interconnect groove or a via hole is formed in the insulating film. An interconnect pattern or a via hole is buried in the interconnect groove or the via hole. A substantially flat hard mask is formed on the interconnect pattern. The hard mask is provided with an opening portion having a width narrower than a space between adjacent interconnect patterns and is made of a material that is etched selectively with the insulating film.

Abstract: Provided are a composition for forming porous film which can form a porous film having practical mechanical strength in a simple and low cost process; a porous film and a method for forming the film; and an inexpensive, high-performing and highly reliable semiconductor device comprising the porous film inside.

Abstract: A mounting substrate includes a substrate body having at least first and second adjacent chip mounting regions on a surface thereof, and a dicing line between the first and second mounting regions; a first plurality of inner electrodes aligned along a first side of the first chip mounting region; a second plurality of inner electrodes aligned along a second side of the second chip mounting region, wherein the first side of the first chip mounting region confronts the second side of the second chip mounting region; and an interconnect wiring pattern located between the first and second chip mounting regions, and commonly connected to the first plurality of inner electrodes and the second plurality of inner electrodes, wherein the interconnect wiring pattern includes a plurality of connecting wiring portions and at least some of the wiring pattern extends obliquely across the dicing line.

Abstract: Disclosed is a semiconductor integrated circuit device which includes a test element group circuit connected between a first and a second pad. The test element group circuit includes a plurality of semiconductor devices connected in series between the first and second pads. At least two adjacent ones of the semiconductor devices are connected to each other via a signal path that is formed by a multi-layer interconnection structure.

Abstract: A method for arranging a power supply line in a semiconductor device including a plurality of memory cell array blocks and a semiconductor device are provided in order to supply stable operating voltages, such as a power supply voltage and a ground voltage, to a sense amplifier allocated to each of the plurality of memory cell array blocks.

Abstract: A semiconductor device having contact surfaces of different heights electrically connected to conductors defined on one or more patterned metal planes and a method for fabricating the semiconductor device. In one embodiment, the semiconductor device comprises a substrate having a process surface; a first contact and a second contact arranged on the substrate, a second contact surface of the second contact being at a greater distance, in a substrate-normal direction, from the substrate than a first contact surface of the first contact; a first conductor disposed in a first patterned metal plane and electrically connected to the first contact surface; and a second conductor disposed in a second patterned metal plane and electrically connected to the second contact surface, wherein the second metal plane is disposed at a greater distance, in the substrate-normal direction, from the substrate than the first metal plane.

Abstract: A conductive line varies in thickness to assist in overcoming RC delays and noise coupling. By varying line thickness, variation in conductor width is avoided if necessary to maintain a specified minimum pitch between conductors while maintaining predetermined desired RC parameters and noise characteristics of the conductive line. Conductor depth variation is achieved by etching a dielectric layer to different thicknesses. A subsequent conductive fill over the dielectric layer and in the differing thicknesses results in a conductive line that varies in thickness. Different conductive line thicknesses available at a particular metal level can additionally be used for semiconductor structures other than a signal or a power supply conductive line, such as a contact, a via or an electrode of a device. The thickness analysis required to determine how interconnect thickness is varied in order to meet a desired design criteria may be automated and provided as a CAD tool.

Abstract: A method of aligning a plurality of empty-spaced buried patterns formed in semiconductor monocrystalline substrates is disclosed. In an exemplary embodiment, high-temperature metal marks are formed to include a conductive material having a melting temperature higher than an annealing temperature used to form such empty-spaced buried patterns. The high-temperature metal marks are formed prior to the formation of the empty-spaced buried patterns formed in a monocrystalline substrate, so that the empty-space buried patterns are aligned to the marks. Subsequent semiconductor structures that are formed as part of desired semiconductor devices can be also aligned to the marks.

Abstract: In a semiconductor device with a plurality of semiconductor chips stacked on a substrate, a wiring layer disposed so as to be sandwiched between the semiconductor chips, and a plurality of bonding pads, for connecting a bonding wire, provided on the wiring layer, are provided.

Abstract: An interconnect via structure according to the present invention can be used to support high frequency broadband signal transmission. The interconnect vias progressively increase in size and pitch from the signal source layer of the package substrate to the terminal pad layer of the package substrate. Each interconnect via includes a plurality of conductive sections formed at different substrate layers. At each substrate layer, the size and pitch of the vias result in a specified impedance. In a practical embodiment, the via impedance at each substrate layer is constant (e.g., 50 ohms). The interconnect structure can maintain a constant impedance while transitioning from a relatively narrow pitch at the signal source layer to a relatively wide pitch at the terminal layer, which may correspond to the pitch of the package substrate solder balls.

Abstract: A memory card substrate includes a first solder pad assembly formed on a top edge of the memory card substrate. The first solder pad assembly has multiple first solder pads equally spaced from each other and multiple first gaps each sandwiched between two adjacent first solder pads. A second solder pad assembly is formed on a bottom edge of the memory card substrate and has multiple second solder pads equally spaced from each other and multiple second gaps each sandwiched between two adjacent second solder pads. Each first solder pad corresponds to one of the second gaps so that the first solder pads are alternately arranged on the top edge relative to the second solder pads on the bottom edge.

Abstract: A wiring substrate has a semiconductor chip mounting surface. The semiconductor chip mounting surface is provided with a plurality of partially overlapping chip mounting areas capable of mounting a plurality of types of semiconductor chips with different chip sizes. A plurality of groups of conductive pads is formed on the wiring substrate corresponding to the semiconductor chips mountable on the respective chip mounting areas. Any one of the mountable semiconductor chips is mounted on any one of the chip mounting areas. A plurality of conductive pads on the semiconductor chip mounted on one chip mounting area is electrically connected to one of the groups of conductive pads.

Abstract: A module for optical communications includes a light receiving element which converts the light signal to an electric signal and an insulating substrate including first and second surfaces opposite to each other. An output section is provided on the first surface and extracts the electric signal as reverse and non-reverse signals. First and second connection terminals are connected to the output section and output the reverse and non-reverse signals. First and second wiring patterns are provided on the first surface. The first and second wiring patterns are electrically connected to one of the first and second wiring patterns and the other one thereof. The first and second wiring patterns have first and second ends, respectively. The first and second ends are provided in order in a direction intersecting with a line connecting the first and second connection terminals.

Abstract: An integrated circuit has at least two circuit components (1, 2), which are formed on a semiconductor substrate (13) of a first conductivity type and each of which has a self-contained supply voltage system; the integrated circuit has at least one coupling circuit which connects the same potentials (Vss1, Vss2; Vcc1, Vcc2) of the two supply voltage systems in such a way as to intercept the voltage peaks. The coupling circuit includes at least one transistor (T1, T2, T3) with a base (20, 21, 22) of the first conductivity type, and a collector (15, 16, 17, 18) and emitter (15, 16, 17, 18) of a second conductivity type, the base of which transistor is connected through a resistor (R) to the potentials (Vss1, Vss2) of the two supply voltage systems, and the collector and emitter of which are directly connected to one of these potentials.

Abstract: A wire connection structure has light-emitting points formed by third electrodes and second electrodes, each second electrode being electrically connected to a first electrode functioning as a lead-out electrode by way of an electro-conductive member, and comprises electro-conductive members for respectively connecting the second electrodes and the first electrodes. The electro-conductive members are formed either by an ink-jet method or a gas deposition method. Thus, an electro-conductive member directly contacts with an end of each of the first electrodes to establish an excellent electric connection between the first electrode and the corresponding second electrode without using an insulating member.

Abstract: An integrated circuit package is constructed by attaching lower dies to a substrate that has bond fingers deposited on its surface. One lower die and its associated bond fingers are located offset from the center of the substrate. The lower dies are electrically coupled to the substrate's bond fingers with lower bond wires. An upper die is stacked on at least one of the lower dies. The upper die is electrically coupled, with bond wires, to the lower die upon which it is mechanically coupled. Each of the lower dies may be coupled to the other lower die with bond wire bridges that span the lower bond wires. The upper die may be electrically coupled, with bond wire bridges, to any or all of the lower dies.

Abstract: A process for minimizing lateral spacer erosion of an insulating layer adjacent to a contact region and an apparatus whereby there is provided a contact opening with a small alignment tolerance relative to a gate electrode or other structure are disclosed. The process includes the steps of forming a conductive layer on a semiconductor body, then depositing an insulating layer adjacent to the conductive layer. Next, substantially rectangular insulating spacers are formed adjacent to the gate electrode. An etch stop layer is deposited adjacent the insulating layer, followed by an etch to remove the etch stop layer material from the contact region. This etch is conducted under conditions wherein the etch removes the etch stop layer, but retains the substantially rectangular lateral spacer profile of the first insulating layer.

Abstract: A stacked dual-chip semiconductor packaging technology is proposed for the packaging of two semiconductor chips in one single package unit. The proposed dual-chip semiconductor package is characterized by an intercrossedly-stacked dual-chip arrangement which is constructed on a specially-designed leadframe having a supporting frame; a die pad supported on the supporting frame and having a peripherally-located upper portion and a centrally-located downset portion; and a set of leads linked to the supporting frame and arranged around the die pad. By the proposed packaging technology, a first semiconductor chip is mounted within the downset portion of the die pad, while a second semiconductor chip is mounted on the upper portion of the die pad in an intercrossedly-stacked manner in relation to the first semiconductor chip. Compared to the prior art, the proposed technology allows the packaging process to be implemented in a less complex and more cost-effective manner.