Abstract: A light emitting device manufacturing method includes: disposing n pieces of light emitting elements in m rows on a substrate block, where an interval between a kth light emitting element from one end of rows and a (k+1)th light emitting element has a first distance; disposing a phosphor member on the light emitting elements; disposing a frame member to surround the light emitting elements; disposing a cover member in each area surrounded by the frame member to cover lateral surfaces of the light emitting elements and the phosphor members while forming recesses at an upper surface between the kth light emitting elements and the (k+1)th light emitting elements apart by the first distance; disposing a light shielding member in each recess; and cutting the light shielding members, the cover members, and the substrate block between the light emitting elements that are apart by the first distance.

Abstract: A semiconductor structure includes a carrier having a surface, a supporting element, a semiconductor stack and a bridge layer. The supporting element is on the surface. The semiconductor stack is on the surface and has a side surface. The bridge layer includes a first portion connecting to the supporting element, a second portion, and a third portion connecting to the semiconductor stack. The second portion is extended from the third portion toward the first portion and is protruded from the side surface.

Abstract: A display device and manufacturing method thereof with a high level of reliability is provided without increasing the number of manufacturing processes. The display device includes a first conductor, a first insulation layer including a first contact hole exposing a part of the first conductor, a second insulation layer including a second contact hole exposing at least a part of the first contact hole and a part of a surface of the first insulation layer, a pixel electrode overlapping a part of the second contact hole and electrically connected to the first conductor, and a third insulation layer contacting the first insulation layer via the second contact hole.

Abstract: Patterned ceramic wavelength-converting phosphor structures may be bonded to an LED to form a pcLED. The phosphor structures are patterned with features that provide enhanced oxygen permeability to an adhesive bond used to attach the phosphor structure to the LED. The enhanced oxygen permeability reduces transient degradation of the pcLED occurring in the region of the adhesive bond.

Abstract: A display panel includes a thin-film transistor (TFT) array substrate, and a passivation layer and an organic planarization layer both disposed on the TFT array substrate. A silicon oxide (SiOx) layer, a silicon nitride (SiNx) layer, and an organic light-emitting diode (OLED) device layer are disposed on the organic planarization layer. The SiOx layer includes a plurality of first SiOx film portions disposed in a consecutive arrangement, and a plurality of second SiOx film portions disposed in a non-consecutive arrangement. The second SiOx film portions have a fuzz surface, and a photonic crystal structure is formed by corresponding portions of the SiNx layer disposed above the second SiOx film portions and the fuzz surface. The display panel of the present invention utilizes the photonic crystal structure disposed on a light-emitting area to effectively improve a light extraction rate of the OLED device.

Abstract: A method of manufacturing a light-emitting device 1 includes a step of providing first phosphor sheets 11, a step of providing second phosphor sheets 12, a step of providing a light-emitting element 13, a selection step of selecting a combination of one of the first phosphor sheets 11 and one of the second phosphor sheets 12 on the basis of a wavelength conversion characteristic of each of the first phosphor sheets 11 and a wavelength conversion characteristic of each of the second phosphor sheets 12, a step of obtaining a plurality of first phosphor pieces 11c and a plurality of second phosphor pieces 12c from the selected first phosphor sheet 11 and the selected second phosphor sheet 12, and a step of disposing one of the first phosphor pieces 11c and one of the second phosphor pieces 12c on or above the light-emitting element 13.

Abstract: An electroluminescent device including a first electrode and a second electrode facing each other, and a quantum dot emission layer disposed between the first electrode and the second electrode and a method of manufacturing the same. The quantum dot emission layer does not include cadmium and lead, the quantum dot emission layer includes a first layer including first quantum dots, facing the first electrode, a second layer including second quantum dots, facing the second electrode, and a third layer including third quantum dots, disposed between the first layer and the second layer, wherein a highest occupied molecular orbital energy level of the third layer is less than a highest occupied molecular orbital energy level of the layer and the highest occupied molecular orbital energy level of the third layer is less than a highest occupied molecular orbital energy level of the second layer.

Abstract: A light emitting device package according to an embodiment has a first frame and a second frame arranged to be spaced apart from each other, a third frame arranged between the first frame and the second frame and spaced apart from the first frame and the second frame, a body supporting the first to third frames, a first light emitting device arranged on the body and electrically connected to the first frame and the third frame, and a second light emitting device arranged on the body and electrically connected to the second frame and the third frame. The body has a first recess in an upper area between the first frame and the third frame, and a second recess in an upper area between the third frame and the second frame. An embodiment may have a first resin part arranged in the first recess, and a second resin part arranged in the second recess.

Abstract: A display device including: a substrate; an active layer disposed on the substrate and including active patterns; a first conductive layer disposed on the active layer; a second conductive layer disposed on the first conductive layer and including a data line; a third conductive layer disposed on the second conductive layer; and a light-emitting element disposed on the third conductive layer, wherein the first conductive layer includes a scan line, a first voltage line, and a second voltage line, the third conductive layer includes a third voltage line connected to the first voltage line and a fourth voltage line connected to the second voltage line, the first voltage line and the second voltage line extend in a first direction, the third voltage line and the fourth voltage line extend in a second direction, and the third voltage line and the fourth voltage line are alternately arranged in the first direction.

Abstract: The present invention provides a flexible display panel and a manufacturing method thereof. The flexible display panel includes a substrate made of a flexible material, a thin film transistor substrate disposed on the substrate, a light emitting layer disposed on the thin film transistor substrate, and an encapsulation layer disposed on the light-emitting layer. A bending region is disposed in a display area of the flexible display panel, and a buffer structure having a wave shape is disposed at the bending region on a side of the substrate away from the thin film transistor substrate.

Abstract: A method for making a hydrophobic biosensing device includes forming alternating layers over a top and sides of a fin on a dielectric layer to form a stack of layers. The stack of layers are planarized to expose the top of the fin. The fin and every other layer are removed to form a cathode group of fins and an anode group of fins. A hydrophobic surface on the two groups of fins.

Abstract: An LED display lighting device is disclosed. The LED display lighting device includes: a substrate including a substrate base and a first electrode part and a second electrode part, both of which are disposed on the substrate base; a plurality of LED chips arranged in a matrix on the substrate; and a diffusion plate covering the upper portions of the LED chips. Each of the LED chips includes: a light-transmitting base; n LED cells disposed under the light-transmitting base and each including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; an interconnection through which the n LED cells are connected in series; a first electrode structure through which the first conductive semiconductor layer of the first LED cell is connected to the first electrode part; and a second electrode structure through which the second conductive semiconductor layer of the n-th LED cell is connected to the second electrode part.

Abstract: Sidewall reflectors disposed on the sidewalls of an LED or pcLED comprise porous (for example, hollow) high refractive index light scattering particles dispersed in a transparent binder. The porous particles exhibit a high refractive index contrast and corresponding strong scattering at the interfaces between the porous particle material and one or more air-filled voids in each particle. These sidewall reflectors can provide light confinement with thin reflector structures, allowing close spacing between LEDs and pcLEDs, and may be advantageously employed in microLED arrays.

Abstract: A photoelectric conversion apparatus, comprising: a photoelectric conversion unit; a charge accumulation unit configured to accumulate charges generated in the photoelectric conversion unit; and a transfer transistor configured to connect the photoelectric conversion unit and the charge accumulation unit to each other and to perform a transfer operation of a charge from the photoelectric conversion unit to the charge accumulation unit, wherein the photoelectric conversion apparatus outputs: a first signal obtained by performing an on-off operation of the transfer transistor a plurality of times in a state where the charge accumulation unit is accumulating charges; and a second signal obtained by performing an on-off operation of the transfer transistor a plurality of times in a state where the charge accumulation unit is not accumulating charges.

Abstract: A light emitting diode (LED) panel is provided. The LED panel includes a thin-film transistor (TFT) backplane which includes a plurality of LED bonding areas, and a plurality of LEDs which are respectively bonded to the plurality of LED bonding areas, wherein the plurality of LED bonding areas are formed to have different heights on the TFT backplane according to an LED type bonded thereto, and wherein a relatively thin LED from among the plurality of LEDs is bonded to an LED bonding area of a relatively low height from among the plurality of LED bonding areas.

Abstract: A light source device includes: a substrate; a light-emitting unit matrix including a plurality of light-emitting units disposed in a matrix on the substrate; and a reflective resin disposed in a region, on the substrate, including a region where the light-emitting unit matrix is disposed. The plurality of light-emitting units include a first light-emitting unit and a second light-emitting unit adjacent to each other in a column direction of the light-emitting unit matrix. The reflective resin includes a first reflective portion disposed between the first light-emitting unit and the second light-emitting unit and extending in a direction intersecting the column direction. At least a portion of an upper surface of the first reflective portion protrudes beyond an upper surface of the first light-emitting unit and an upper surface of the second light-emitting unit.

Abstract: One embodiment discloses a semiconductor device comprising: a semiconductor structure, which comprises a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer, and comprises a plurality of first recesses arranged up to a partial area of the first conductive semiconductor layer by penetrating the second conductive semiconductor layer and the active layer, and a second recess arranged between the plurality of first recesses; a plurality of first electrodes arranged inside the plurality of first recesses, and electrically connected with the first conductive semiconductor layer; a plurality of second electrodes electrically connected to the second conductive semiconductor layer; and a reflective layer arranged inside the second recess, wherein the sum of the area of the plurality of first recesses and the area of the second recess is 60% or less of the maximum area i

Abstract: A micro light-emitting device module includes a circuit substrate, a planarization layer and a micro light-emitting device. The planarization layer is disposed on an upper surface of the circuit substrate and has a first surface and a second surface opposite to each other. The second surface is in contact with the upper surface of the circuit substrate. The micro light-emitting device is disposed on the first surface of the planarization layer. A maximum height difference of the second surface of the planarization layer is greater than a thickness of the micro light-emitting device.

Abstract: A light-emitting module includes a substrate, a plurality of light-emitting assembles and a signal controller. The substrate includes a plurality of control circuits. Each light-emitting assembly includes a plurality of LED structures disposed on the substrate, and the LED structures are respectively electrically connected to the control circuits. The signal controller is disposed on the substrate. The LED structures are arranged as a pixel matrix. The substrate includes a plurality of signal pads that are respectively electrically connected to the light-emitting assembles, and that are electrically connected to the signal controller. The substrate has two first lateral regions opposite to each other and two second lateral regions opposite to each other, and the signal pads are disposed on the first lateral region and not disposed on the two second lateral regions, or disposed on the second lateral regions and not disposed on the two first lateral regions.

Abstract: A display apparatus includes a driving substrate and a first light emitting diode element. The driving substrate has a plurality of driving structures. Each of the driving structures includes a first pad, a second pad, a third pad and a fourth pad. The plurality of driving structures include a first driving structure. The first light emitting diode element is electrically connected to a first pad and a second pad of the first driving structure, and the first light emitting diode element crosses a line connecting a third pad and a fourth pad of the first driving structure. A manufacturing method of the display apparatus is also provided.

Abstract: There is provided a white light emitting device comprising a first LED and a second LED disposed on a substrate, a first photoluminescence material layer disposed over at least said first LED, a second photoluminescence material layer disposed over at least said second LED, and a diffusing layer disposed over said first and second photoluminescence layers, said diffusing layer comprising light scattering particles. A method and component are also provided.

Abstract: Disclosed is a method for fabricating CSP LEDs.

Abstract: A substrate structure with high reflectance includes a base material, a patterned circuit layer, an insulating layer and a metal reflecting layer. The base material includes a first surface and a second surface opposite to the first surface. The patterned circuit layer is disposed on the first surface. The insulating layer covers the patterned circuit layer and a part of the first surface exposed by the patterned circuit layer. The metal reflecting layer covers the insulating layer, and a reflectance of the metal reflecting layer is substantially greater than or equal to 85%. A manufacturing method of a substrate structure with high reflectance is also provided.

Abstract: A substrate structure with high reflectance includes a base material, a patterned circuit layer, an insulating layer and a metal reflecting layer. The base material includes a first surface and a second surface opposite to the first surface. The patterned circuit layer is disposed on the first surface. The insulating layer covers the patterned circuit layer and a part of the first surface exposed by the patterned circuit layer. The metal reflecting layer covers the insulating layer, and a reflectance of the metal reflecting layer is substantially greater than or equal to 85%. A manufacturing method of a substrate structure with high reflectance is also provided.

Abstract: Embodiments of the invention include articles incorporating fibrous fragments of mats of silica fibers and methods for producing such articles. The fiber mats may be formed via electrospinning of a sol gel produced with a silicon alkoxide reagent, such as tetraethyl ortho silicate, alcohol solvent, and an acid catalyst.

Abstract: An integrated light source includes: an emissive radiation source having a first spectrum; an optical element located to direct emissions from the emissive radiation source; a volumetric spectrum converter located to convert emissions directed from the emissive radiation source to emissions having a second spectrum different from the first spectrum; an optical reflector located about the converter; an output filter, the reflector being located to reflect the converter emissions towards the output filter; and a package body having an internal cavity containing the emissive radiation source, optical element, converter, reflector, and filter, wherein desired light radiates from the cavity through the filter.

Abstract: An optoelectronic component may include an optoelectronic semiconductor chip having an upper side and a lower side. An emitting region may be formed on the upper side. The emitting region may be configured to emit electromagnetic radiation. A subsurface, forming the emitting region, of the upper side may be smaller than a total surface of the upper side. A collimating optical element may be arranged over the emitting region.

Abstract: The present disclosure provides a light emitting device and a method for manufacturing the same, and a display device, and relates to the technical field of display. The light emitting device includes: a pixel define layer; a plurality of sub-pixels, comprising a first sub-pixel and a second sub-pixel adjacent to and spaced apart from the first sub-pixel by the pixel define layer, wherein each of the plurality of sub-pixels comprises a functional layer; and a blocking member disposed on the pixel define layer.

Abstract: The present disclosure discloses a display panel, a manufacturing method thereof and a display device. By arranging positions of first transmission pads and second transmission pads, and setting areas of first film layers in the first transmission pads to be less than those of second film layers, when the first transmission pads and the second transmission pads are disposed oppositely, fully-opened openings are formed between the two pads, so that it is convenient to fill spaces between the first transmission pads and the second transmission pads with conductive components to allow the first transmission pads be electrically connected with the second transmission pads through the conductive components, guaranteeing an effective electrical connection between the first transmission pads and the second transmission pads and then ensuring signal transmission via first wires and second wires through the first transmission pads and the second transmission pads.

Abstract: A stretchable display panel having a plurality of encapsulated islands and a plurality of bridges connecting the plurality of encapsulated islands. The stretchable display panel includes a plurality of light emitting elements. A respective one of the plurality of encapsulated islands includes at least one of the plurality of light emitting elements encapsulated therein on a base substrate. A respective one of the plurality of light emitting elements includes a first electrode, a light emitting layer on the first electrode, and a second electrode on a side of the light emitting layer away from the first electrode. The stretchable display panel further includes a plurality of connecting lines connecting second electrodes of the plurality of light emitting elements respectively through the plurality of bridges. The plurality of connecting lines include a material different from a material of the second electrode.

Abstract: A method of producing optoelectronic semiconductor devices includes in the stated order: A) providing a semiconductor layer sequence on a transparent wafer, the semiconductor layer sequence including an active layer; B) applying electrical contact pads on a mounting face of the semiconductor layer sequence; C) coating the semiconductor layer sequence at the mounting face and/or on the electrical contact pads with a protective layer; D) dicing the semiconductor layer sequence and the wafer to form semiconductor chips with side faces; E) forming a casting body all around the semiconductor chips directly on the side faces, the protective layer having anti-wetting properties towards a material of the casting body; and F) dicing the casting body to the optoelectronic semiconductor devices, wherein the protective layer remains on the mounting face and/or on the electrical contact pads in the finished optoelectronic semiconductor devices.

Abstract: Solid-state light emitting devices including light-emitting diodes (LEDs), and more particularly packaged LEDs that include individually controllable LED chips are disclosed. In some embodiments, an LED package includes electrical connections configured to reduce corrosion of metals within the package; or decrease the overall forward voltage of the LED package; or provide an electrical path for electrostatic discharge (ESD) chips. In some embodiments, an LED package includes an array of LED chips, each of which is individually controllable such that individual LED chips or subgroups of LED chips may be selectively activated or deactivated. A single wavelength conversion element may be provided over the array of LED chips, or separate wavelength conversion elements may be provided over one or more individual LED chips of the array. Representative LED packages may be beneficial for applications where a high luminous intensity with a controllable brightness or adaptable emission pattern is desired.

Abstract: An organic light-emitting diode (OLED) structure includes a substrate, a dielectric layer on the substrate having an array of well structures with each well structure including a recess with side walls and a floor and the recesses are separated by plateaus having rounded top surfaces, a stack of OLED layers covering at least the floor of the well, and a light extraction layer (LEL) in the well over the stack of OLED layers.

Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.

Abstract: A display device is disclosed. In an embodiment a display device having a plurality of pixels separately operable from each other includes a semiconductor layer sequence including a first semiconductor layer, an active layer and a second semiconductor layer, a first contact structure contacting the first semiconductor layer and a second contact structure contacting the second semiconductor layer and at least one separating region extending through the first contact structure, the first semiconductor layer and the active layer into the second semiconductor layer, wherein the semiconductor layer sequence and the first contact structure have at least one first recess laterally adjacent with respect to a respective pixel, the first recess extending through the first contact structure, the first semiconductor layer and the active layer into the second semiconductor layer, and wherein the second contact structure includes second contacts extending through the at least one first recess.

Abstract: Embodiments of the present disclosure provide a display device. The display device includes: a display panel including a plurality of sub-pixels, each of the sub-pixels including at least one display unit, each display unit including a first electrode, a second electrode and a liquid crystal layer, the liquid crystal layer being configured to deflect collimated light rays incident onto the display panel by controlling electric signals applied to the first electrode and the second electrode; and an optical member configured to convert collimated light rays emitted from the liquid crystal layer into divergent light rays.

Abstract: The present disclosure relates to a lighting device comprising light-emitting elements such as light-emitting diodes arranged on a substrate. The object to provide a lighting device comprising multiple light-emitting elements and light guides, wherein the thermal sensitivity of the lighting device is reduced in a particularly simple manner, is solved in that the lighting device comprises: a lens with a light entry side and a light exit side; light guides, each light guide being arranged in optical contact to at least one of the light-emitting elements and being configured to guide light emitted by the at least one of the light-emitting elements towards the light entry side of the lens; and a transparent stabilizer element being arranged in mechanical contact to the light exit side of the lens, wherein the transparent stabilizer element is configured to define the shape of the light exit side of the lens at least in regions. The invention further refers to a method for producing a lighting device.

Abstract: The present disclosure discloses a display screen and a display device, wherein the display screen comprises a display area and a non-display area; the display area comprises a first opening area, and the non-display area comprises a first non-display area and a second non-display area; the second non-display area is embedded in the first opening area; the first non-display area surrounds the display area and the second non-display area; the display screen comprises a front sensor, a first substrate and a second substrate; the first substrate covers the display area, the first non-display area and the second non-display area, and the second substrate covers the display area, the first non-display area and the second non-display area; the front sensor is arranged in the second non-display area; and the first substrate and the second substrate allow light to pass through at respective positions corresponding to the second non-display area.

Abstract: The present application discloses an organic light-emitting diode (OLED). The OLED includes a first electrode and an organic light-emitting layer on the first electrode. Additionally, the OLED includes a second electrode on a side of the organic light-emitting layer distal to the first electrode. Furthermore, the OLED includes a substantially transparent protective layer on a side of the second electrode layer distal to the organic light emitting layer. Moreover, the OLED includes a substantially transparent conductive layer on a side of the substantially transparent protective layer distal to the second electrode, the substantially transparent conductive layer electrically connected to the second electrode.

Abstract: An optical verification method and mass transfer system described. In an embodiments, a mass transfer sequence may be accompanied by optical imaging and inspection to detect pick and place errors. The optical imaging and inspection techniques may be performed in-situ.

Abstract: A light-emitting module includes a light-guiding plate having an upper surface with a first hole and having a rectangular shape in a top view, and a light-emitting element opposite to the first hole and disposed opposite to the upper surface. The first hole includes a first portion and a second portion between the first portion and the upper surface. The first portion is provided with a first opening at a boundary between the first portion and the second portion and a first lateral surface inclined with respect to the upper surface. A shape of the first opening in the top view is defined by a first axis parallel to a short side of the rectangular shape of the light-guiding plate and a second axis parallel to a long side of the rectangular shape and shorter than the first axis in a plan view.

Abstract: A method of manufacturing an optoelectronic semiconductor chip includes a) providing a semiconductor layer sequence having an active region that generates or receives radiation on a substrate; b) forming at least one recess extending through the active region; c) forming a metallic reinforcement layer on the semiconductor layer sequence by galvanic deposition, the metallic reinforcement layer completely covering the semiconductor layer sequence and at least partially filling the recess; and d) removing the substrate, wherein the metallic reinforcement layer is leveled on a side facing away from the semiconductor layer sequence.

Abstract: A camera substrate assembly, a camera apparatus, and a terminal device, where the camera substrate assembly includes a rigid support plate and a printed circuit board laminated, where at least two mounting holes for accommodating camera chips are disposed on the printed circuit board, the rigid support plate has mounting surfaces facing the mounting holes respectively and are configured to support the camera chips, strength of the rigid support plate is greater than strength of the printed circuit board, and flatness of the mounting surfaces is less than a specified threshold. The mounting holes disposed on the printed circuit board and the mounting surfaces disposed on the rigid support plate are used to support cameras. This avoids impact of warpage on camera mounting when the printed circuit board and a flexible circuit board are laminated, and improves flatness after camera mounting.

Abstract: Light emitting diode (LED) devices and systems include a superstrate (e.g., a light-transmissive layer), at least one region of wavelength-conversion material in the light-transmissive layer, and LEDs attached to the superstrate at the location of the wavelength-conversion material. An encapsulant layer is formed over and/or around the LEDs with an opaque or clear material. Additional color filter layers are optionally applied to the light-transmissive layer. A method for producing LED devices and systems includes providing a superstrate with a wavelength-conversion material region formed therein, attaching LEDs to the superstrate at the die-attach layer, forming conductive surfaces on a side of the LED opposite the die-attach layer, dispensing an encapsulant layer to at least partially encapsulate the LEDs, and forming one or more electrical traces to electrically interconnect the conductive surfaces of at least some of the LEDs with each other.

Abstract: A laser illumination or dazzler device and method. More specifically, examples of the present invention provide laser illumination or dazzling devices power by one or more violet, blue, or green laser diodes characterized by a wavelength from about 390 nm to about 550 nm. In some examples the laser illumination or dazzling devices include a laser pumped phosphor wherein a laser beam with a first wavelength excites a phosphor member to emit electromagnetic at a second wavelength. In various examples, laser illumination or dazzling devices according to the present invention include polar, non-polar, or semi-polar laser diodes. In a specific example, a single laser illumination or dazzling device includes a plurality of violet, blue, or green laser diodes. There are other examples as well.

Abstract: Solid-state light emitting devices including light-emitting diodes (LEDs), and more particularly packaged LEDs are disclosed. LED packages are disclosed that include an LED chip with multiple discrete active layer portions mounted on a submount. The LED packages may further include wavelength conversion elements and light-altering materials. The multiple discrete active layer portions may be electrically connected in series, parallel, or in individually addressable arrangements. The LED chip with the multiple discrete active layer portions may provide the LED package with improved brightness, improved alignment, simplified manufacturing, and reduced costs.

Abstract: The present invention relates to a design for optimally mounting a Touch Drive (IC) (TDI) signal line and a Display Drive IC (DDI) signal line of a display apparatus having a touch function. According to the display apparatus having a touch function and the method of mounting the signal line of the display apparatus according to the present invention, the TDI signal line and the DDI signal line are mounted so as not to overlap in the bending region on the same flexible substrate, thereby preventing the problem, such as cracks, in the related art. Further, according to the display apparatus having a touch function and the method of mounting the signal line of the display apparatus according to the present invention, it is possible to easily manufacture a full-screen display apparatus by reducing a length of a fan-out area of the TDI signal line.

Abstract: Provided is a display device. The display device includes a substrate having a sub-pixel area. In some examples, the substrate may have or define a plurality of sub-pixel areas. A light-emitting diode (LED) and a thin-film transistor for driving the LED are disposed in the sub-pixel area. An extended light path layer is disposed on the substrate and is configured to surround the sub-pixel area. Accordingly, it is possible so as to improve the luminous efficiency of the display device.

Abstract: A method for producing a photo-emitting and/or photo-receiving device with a metal optical separation grid, comprising at least: producing at least one photo-emitting and/or photo-receiving component, wherein at least one first metal electrode of the photo-emitting and/or photo-receiving component covers side flanks of at least one semiconductor stack of the photo-emitting and/or photo-receiving component and extends to at least one emitting and/or receiving face of the photo-emitting and/or photo-receiving component; treating at least one face of the first metal electrode located at the emitting and/or receiving face, rendering wettable said face of the first metal electrode; producing of the metal optical separation grid on at least one support; fastening of the metal optical separation grid against said face of the first metal electrode by brazing; removing the support.

Abstract: A display device includes: a substrate; an insulating layer arranged above the substrate; a through portion configured to pass through the substrate and the insulating layer; a pixel array located above the insulating layer and including pixels each including a light-emitting element including, a pixel electrode, an opposite electrode facing the pixel electrode, and an emission layer arranged between the pixel electrode and the opposite electrode, the pixels at least partially surrounding the through portion; and a pattern portion arranged between the through portion and the pixel array, wherein the pattern portion includes: a recess that is concave along a thickness direction of the insulating layer; and a cladding layer arranged above the insulating layer, configured to cover the recess, and including a material different from the insulating layer.