Abstract: A microelectromechanical systems (MEMS) package with roughness for high quality anti-stiction is provided. A device substrate is arranged over a support device. The device substrate comprises a movable element with a lower surface that is rough and that is arranged within a cavity. A dielectric layer is arranged between the support device and the device substrate. The dielectric layer laterally encloses the cavity. An anti-stiction layer lines the lower surface of the movable element. A method for manufacturing the MEMS package is also provided.

Abstract: Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes an inter-layer dielectric (ILD) layer above a substrate. A conductive interconnect line is in a trench in the ILD layer, the conductive interconnect line having a first portion and a second portion, the first portion laterally adjacent to the second portion. A dielectric plug is between and laterally adjacent to the first and second portions of the conductive interconnect line, the dielectric plug comprising a metal oxide material.

Abstract: A method includes forming a fin protruding over a substrate; forming a conformal oxide layer over an upper surface and along sidewalls of the fin; performing an anisotropic oxide deposition or an anisotropic plasma treatment to form a non-conformal oxide layer over the upper surface and along the sidewalls of the fin; and forming a gate electrode over the fin, the conformal oxide layer and the non-conformal oxide layer being between the fin and the gate electrode.

Abstract: Methods and apparatuses for etching semiconductor material on substrates using atomic layer etching by chemisorption, by deposition, or by both chemisorption and deposition mechanisms in combination with oxide passivation are described herein. Methods involving atomic layer etching using a chemisorption mechanism involve exposing the semiconductor material to chlorine to chemisorb chlorine onto the substrate surface and exposing the modified surface to argon to remove the modified surface. Methods involving atomic layer etching using a deposition mechanism involve exposing the semiconductor material to a sulfur-containing gas and hydrogen to deposit and thereby modify the substrate surface and removing the modified surface.

Abstract: A method is presented for forming a semiconductor device. The method includes forming an oxygen containing interfacial layer on a semiconductor substrate, forming a hafnium oxide layer on the interfacial layer, the hafnium oxide layer crystallizing to a non-centrosymmetric phase in a final structure, forming a first electrode containing a scavenging metal, which reduces a thickness of the interfacial layer via an oxygen scavenging reaction in the final structure, on the hafnium oxide layer, and forming a second electrode on the first electrode.

Abstract: Occurrence of short-channel characteristics and parasitic capacitance of a MOSFET on a SOI substrate is prevented. A sidewall having a stacked structure obtained by sequentially stacking a silicon oxide film and a nitride film is formed on a side wall of a gate electrode on the SOI substrate. Subsequently, after an epitaxial layer is formed beside the gate electrode, and then, the nitride film is removed. Then, an impurity is implanted into an upper surface of the semiconductor substrate with using the gate electrode and the epitaxial layer as a mask, so that a halo region is formed in only a region of the upper surface of the semiconductor substrate which is right below a vicinity of both ends of the gate electrode.

Abstract: In a method of manufacturing a tungsten layer by an atomic layer deposition, a seed layer on an underlying layer is formed on a substrate by supplying a boron containing gas and a dilute gas, and a tungsten layer is formed on the seed layer by supplying a tungsten containing gas. A flow ratio of a flow amount of the boron containing gas to a total flow amount of the boron containing gas and the dilute gas is in a range from 1/21 to 1/4.

Abstract: Provided is a method for manufacturing a magnetoresistive element, including a step of forming a tunnel barrier layer, wherein the step of forming the tunnel barrier layer includes a deposition step of depositing a metal film on top of a substrate, and an oxidation step of subjecting the metal film to an oxidation process. The oxidation step includes holding the substrate having Mg formed thereon, on a substrate holder in a processing container in which the oxidation process is performed, supplying an oxygen gas to the substrate by introducing the oxygen gas into the processing container, at a temperature at which Mg does not sublime, and heating the substrate after the introduction of the oxygen gas.

Abstract: A method of forming an oxide layer is provided in the present invention. The method includes the following steps. A first oxide layer is formed on a semiconductor substrate, and a quality enhancement process is then performed to etch the first oxide layer and densify the first oxide layer at the same time for forming a second oxide layer. The first oxide layer is etched and densified at the same time by a mixture of dilute hydrofluoric acid (DHF) and hydrogen peroxide (H2O2) in the quality enhancement process. The thickness of the second oxide layer may be reduced and the quality of the second oxide layer may be enhanced by the quality enhancement process at the same time.

Abstract: A method of continuous fabrication of a layered structure on a substrate having a patterned recess, includes: (i) forming a dielectric layer on a substrate having a patterned recess in a reaction chamber by PEALD using a first RF power; (ii) continuously after completion of step (i) without breaking vacuum, etching the dielectric layer on the substrate in the reaction chamber by PEALE using a second RF power, wherein a pressure of the reaction chamber is controlled at 30 Pa to 1,333 Pa throughout steps (i) and (ii); a noble gas is supplied to the reaction chamber continuously throughout steps (i) and (ii); and the second RF power is higher than the first RF power.

Abstract: Methods are provided for integrating atomic layer etch and atomic layer deposition by performing both processes in the same chamber or reactor. Methods involve sequentially alternating between atomic layer etch and atomic layer deposition processes to prevent feature degradation during etch, improve selectivity, and encapsulate sensitive layers of a semiconductor substrate.

Abstract: A trench gate metal oxide semiconductor field effect transistor includes a substrate and a gate. The substrate has a trench. The trench is extended downwardly from a surface of the substrate. The gate includes an insertion portion and a symmetrical protrusion portion. The insertion portion is embedded in the trench. The symmetrical protrusion portion is symmetrically protruded over the surface of the substrate.

Abstract: Provided is a method of selectively removing a first region from a workpiece which includes the first region formed of silicon oxide and a second region formed of silicon. The method performs a plurality of sequences. Each sequence includes: forming a denatured region by generating plasma of a processing gas that contains hydrogen, nitrogen, and fluorine within a processing container that accommodates the workpiece so as to denature a portion of the first region, and removing the denatured region within the processing container. In addition, a sequence subsequent to a predetermined number of sequences after a first sequence among the plurality of sequences further includes exposing the workpiece to plasma of a reducing gas which is generated within the processing container, prior to the forming of the denatured region.

Abstract: The embodiments herein relate to methods and apparatus for etching a recessed feature in dielectric material. In various embodiments, a recessed feature is formed in two etching operations. The first etching operation partially etches the features and may take place in a reactor configured to produce a capacitively coupled plasma. The first etching operation may end before the underlying semiconductor material experiences substantial damage due to penetration of ions through the dielectric atop the semiconductor material. The second etching operation may take place in a reactor configured to produce an inductively coupled plasma. Both the first and second etching operations may themselves be multi-step, cyclic processes.

Abstract: A surface of a semiconductor-containing dielectric material/oxynitride/nitride is treated with a basic solution in order to provide hydroxyl group termination of the surface. A dielectric metal oxide is subsequently deposited by atomic layer deposition. The hydroxyl group termination provides a uniform surface condition that facilitates nucleation and deposition of the dielectric metal oxide, and reduces interfacial defects between the oxide and the dielectric metal oxide. Further, treatment with the basic solution removes more oxide from a surface of a silicon germanium alloy with a greater atomic concentration of germanium, thereby reducing a differential in the total thickness of the combination of the oxide and the dielectric metal oxide across surfaces with different germanium concentrations.

Abstract: The present disclosure reduces and, in some instances, eliminates the density of interface states in III-V compound semiconductor materials by providing a thin crystalline interlayer onto an upper surface of a single crystal III-V compound semiconductor material layer to protect the crystallinity of the single crystal III-V compound semiconductor material layer's surface atoms prior to further processing of the structure.

Abstract: A memory device includes a mesa structure and a word line. The mesa structure, having two opposite side surfaces, includes at least one pair of source/drain regions and at least one channel base region corresponding to the pair of source/drain regions formed therein. The word line includes two linear sections and at least one interconnecting portion. Each linear section extends on the respective side surface of the mesa structure, adjacent to the channel base region. The at least one interconnecting portion penetrates through the mesa structure, connecting the two linear sections.

Abstract: A memory device includes a mesa structure and a word line. The mesa structure, having two opposite side surfaces, includes at least one pair of source/drain regions and at least one channel base region corresponding to the pair of source/drain regions formed therein. The word line includes two linear sections and at least one interconnecting portion. Each linear section extends on the respective side surface of the mesa structure, adjacent to the channel base region. The at least one interconnecting portion penetrates through the mesa structure, connecting the two linear sections.

Abstract: A method for producing a solid-state semiconducting structure, includes steps in which: (i) a monocrystalline substrate is provided; (ii) a monocrystalline oxide layer is formed, by epitaxial growth, on the substrate; (iii) a bonding layer is formed by steps in which: (a) the impurities are removed from the surface of the monocrystalline oxide layer; (b) a semiconducting bonding layer is deposited by slow epitaxial growth; and (iv) a monocrystalline semiconducting layer is formed, by epitaxial growth, on the bonding layer so formed. The solid-state semiconducting heterostructures so obtained are also described.

Abstract: There is provided a method of removing trap levels and defects, which are caused by stress, from a single crystal silicon thin film formed by an SOI technique. First, a single crystal silicon film is formed by using a typical bonding SOI technique such as Smart-Cut or ELTRAN. Next, the single crystal silicon thin film is patterned to form an island-like silicon layer, and then, a thermal oxidation treatment is carried out in an oxidizing atmosphere containing a halogen element, so that an island-like silicon layer in which the trap levels and the defects are removed is obtained.

Abstract: A silicon-germanium non-formation region not formed with a silicon germanium layer and a silicon-germanium formation region formed with a silicon germanium layer are provided in a silicon chip, an internal circuit and an input/output buffer are arranged in the silicon-germanium formation region, and a pad electrode and an electrostatic protection element are arranged in the silicon-germanium non-formation region.

Abstract: A semiconductor device in which current flows in a vertical direction includes a structure that decreases resistance between a source electrode and a drain electrode along with a current path at a position different from a position having highest electric field intensity between the source electrode and the drain electrode.

Abstract: Electronic apparatus and methods of forming the electronic apparatus include a gallium lanthanide oxide film for use in a variety of electronic systems. The gallium lanthanide oxide film may be structured as one or more monolayers. The gallium lanthanide oxide film may be formed using atomic layer deposition.

Abstract: A method for fabrication of 3D semiconductor devices utilizing a layer transfer and steps for forming transistors on top of a pre-fabricated semiconductor device comprising transistors formed on crystallized semiconductor base layer and metal layer for the transistors interconnections and insulation layer. The advantage of this approach is reduction of the over all metal length used to interconnect the various transistors.

Abstract: After silicon oxide film (9) is formed on the surface of a semiconductor substrate (1), the silicon oxide film (9) in a region in which a gate insulation film having a small effective thickness is formed is removed using diluted HF and after that, high dielectric constant insulation film (10) is formed on the semiconductor substrate (1). Consequently, two kinds of gate insulation films, namely, a gate insulation film (12) comprised of stacked film of high dielectric constant insulation film (10) and silicon oxide film (9) and gate insulation film (11) comprised of the high dielectric constant insulation film (10) are formed on the semiconductor substrate (1).

Abstract: There is provided a method of removing trap levels and defects, which are caused by stress, from a single crystal silicon thin film formed by an SOI technique. First, a single crystal silicon film is formed by using a typical bonding SOI technique such as Smart-Cut or ELTRAN. Next, the single crystal silicon thin film is patterned to form an island-like silicon layer, and then, a thermal oxidation treatment is carried out in an oxidizing atmosphere containing a halogen element, so that an island-like silicon layer in which the trap levels and the defects are removed is obtained.

Abstract: A method of forming a semiconductor structure (and the resulting structure), includes straining a free-standing semiconductor, and fixing the strained, free-standing semiconductor to a substrate.

Abstract: Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a metal source chemical, a silicon source chemical and an oxidizing agent. In preferred embodiments, an alkyl amide metal compound and a silicon halide compound are used. Methods according to preferred embodiments can be used to form hafnium silicate and zirconium silicate films with substantially uniform film coverages on substrate surfaces comprising high aspect ratio features (e.g., vias and/or trenches).

Abstract: After silicon oxide film (9) is formed on the surface of a semiconductor substrate (1), the silicon oxide film (9) in a region in which a gate insulation film having a small effective thickness is formed is removed using diluted HF and after that, high dielectric constant insulation film (10) is formed on the semiconductor substrate (1). Consequently, two kinds of gate insulation films, namely, a gate insulation film (12) comprised of stacked film of high dielectric constant insulation film (10) and silicon oxide film (9) and gate insulation film (11) comprised of the high dielectric constant insulation film (10) are formed on the semiconductor substrate (1).

Abstract: In an embodiment, a 3-dimensional flash memory device includes: a gate extending in a vertical direction on a semiconductor substrate; a charge storing layer surrounding the gate; a silicon layer surrounding the charge storing layer; a channel region vertically formed in the silicon layer; and source/drain regions vertically formed on both sides of the channel region in the silicon layer. Integration can be improved by storing data in a 3-dimensional manner; a 2-bit operation can be performed by providing transistors on both sides of the gate.

Abstract: A method for controlling interface layer thickness in high dielectric constant (high-k) film structures found in semiconductor devices. According to one embodiment, the method includes providing a monocrystalline silicon substrate, growing a chemical oxide layer on the monocrystalline silicon substrate in an aqueous bath, vacuum annealing the chemical oxide layer, depositing a high-k film on the vacuum annealed chemical oxide layer, and optionally vacuum annealing the high-k film. According to another embodiment, the method includes depositing a high-k film on a chemical oxide layer, and vacuum annealing the high-k film.

Abstract: The method of manufacturing the semiconductor device includes nitridizing a silicon substrate with ammonia while heating the silicon substrate, then heating the silicon substrate in an atmosphere containing nitrogen and oxygen to form a gate insulating film including a silicon-based insulating film containing nitrogen and oxygen, then annealing the silicon substrate in an oxygen atmosphere, and forming a gate electrode on the gate insulating film.

Abstract: A method of manufacturing a nanowire, a method of manufacturing a semiconductor apparatus including a nanowire and a semiconductor apparatus formed from the same are provided. The method of manufacturing a semiconductor apparatus may include forming a material layer pattern on a substrate, forming a first insulating layer on the material layer pattern, a first nanowire forming layer and a top insulating layer on the substrate, wherein a total depth of the first insulating layer and the first nanowire forming layer may be formed to be smaller than a depth of the material layer pattern, sequentially polishing the top insulating layer, the first nanowire forming layer and the first insulating layer so that the material layer pattern is exposed, exposing part of the first nanowire forming layer to form an exposed region and forming a single crystalline nanowire on an exposed region of the first nanowire forming layer.

Abstract: The invention includes methods of forming and/or passivating semiconductor constructions. In particular aspects, various oxides of a semiconductor substrate can be formed by exposing semiconductive material of the substrate to deuterium-enriched steam. In other aspects, a semiconductor construction is passivated by subjecting the construction to an anneal at a temperature of greater than or equal to 350° C. while exposing the construction to a deuterium-enriched ambient.

Abstract: The invention provides a transistor having low leakage currents and methods of fabricating the transistor on a semiconductor substrate. The transistor has a gate and a nonuniform gate oxide under the gate.

Abstract: The present invention provides a single crystal wafer, wherein the main surface has a plane or a plane equivalent to a plane tilting with respect to a [100] axis of single crystal by angles of ? (0°<?<90°) for the [011] direction, ? (0°<?<90°) for the [01-1] direction and ? (0°??<45°) for the [10-1] or [101] direction. Thus, a single crystal wafer that can sufficiently bear device production processes even with a small wafer thickness is provided and thereby loss of single crystal raw material is reduced. Further, by using such a wafer, MIS type semiconductor devices and solar cells are provided at a low cost.

Abstract: A substrate processing method comprises the step of forming an oxide film on a silicon substrate surface, and introducing nitrogen atoms into the oxide film by exposing the oxide film to nitrogen radicals excited in plasma formed by a microwave introduced via a planar antenna.

Abstract: The example embodiments disclose devices and methods to prevent silicide strapping of the Source/Drain to Body in semiconductor devices with S/D stressor. We provide isolation regions in the substrate and a gate structure over the substrate. We form recesses in the substrate adjacent to the gate structure with disposable spacers and adjacent to the isolation regions. We provide stressor regions filling the recesses. The stress region can have a pit adjacent the isolation regions. We form stressor spacers at least partially in the pit on the sidewalls of the stressor regions. We form silicide regions over the stressor regions. The spacer on the stressor regions sidewalls inhibit the formation of silicide at the stressor region edge during the silicide process, thus preventing silicide strapping of the Source/Drain to Body.

Abstract: The use of atomic layer deposition (ALD) to form an amorphous dielectric layer of titanium oxide (TiOx) doped with lanthanide elements, such as samarium, europium, gadolinium, holmium, erbium and thulium, produces a reliable structure for use in a variety of electronic devices. The dielectric structure is formed by depositing titanium oxide by atomic layer deposition onto a substrate surface using precursor chemicals, followed by depositing a layer of a lanthanide dopant, and repeating to form a sequentially deposited interleaved structure. Such a dielectric layer may be used as the gate insulator of a MOSFET, as a capacitor dielectric, or as a tunnel gate insulator in flash memories, because the high dielectric constant (high-k) of the film provides the functionality of a thinner silicon dioxide film, and because the reduced leakage current of the dielectric layer when the percentage of the lanthanide element doping is optimized.

Abstract: A gate insulating film made of silicon oxynitride is disposed on the partial surface area of a semiconductor substrate. A gate electrode is disposed on the gate insulating film. Source and drain regions are disposed on both sides of the gate electrode. An existence ratio of subject nitrogen atoms to a total number of nitrogen atoms in the gate insulating film is 20% or smaller, wherein three bonds of each subject nitrogen atom are all coupled to silicon atoms and remaining three bonds of each of three silicon atoms connected to the subject nitrogen atom are all coupled to other nitrogen atoms.

Abstract: It is an object of the present invention to provide a method for removing the metal element from the semiconductor film which is different from the conventional gettering step for removing the metal element from the semiconductor film. In the present invention, when Ni element (Ni) is used as the metal element and a silicon-based film (referred to as a silicon film) is used as the semiconductor film, nickel silicide segregates in the ridge formed in the silicon film by irradiating the pulsed laser light. Next, etching solution of hydrofluoric acid based etchant is used to remove the nickel silicide segregated in the ridge. When the surface of the semiconductor film is rough after removing the metal element by means of etching, the laser light may be irradiated to the semiconductor film under the insert atmosphere to flatten the surface thereof.

Abstract: Disclosed is a capacitor with a dielectric layer having a low equivalent oxide thickness compared to a HfO2 layer and capable of decreasing a level of a leakage current incidence and a method for fabricating the same. Particularly, the capacitor includes: a bottom electrode; a Hf1-xLaxO layer on the bottom electrode; and a top electrode on the Hf1-xLaxO layer, wherein x is an integer. The method includes the steps of: forming at least one bottom electrode being made of polysilicon doped with impurities; nitriding a surface of the bottom electrode; depositing the amorphous Hf1-xLaxO layer on the nitrided surface of the bottom electrode; performing a thermal process for crystallizing the amorphous Hf1-xLaxO layer and removing impurities existed within the Hf1-xLaxO layer; nitriding a surface of the crystallized Hf1-xLaxO layer; and forming the top electrode being made of polysilicon doped with impurities on the nitrided surface of the crystallized Hf1-xLaxO layer.

Abstract: An integrated circuit is provided including an FET gate structure formed on a substrate. This structure includes a gate dielectric on the substrate, and a metal nitride layer overlying the gate dielectric and in contact therewith. This metal nitride layer is characterized as MNx, where M is one of W, Re, Zr, and Hf, and x is in the range of about 0.7 to about 1.5. Preferably the layer is of WNx, and x is about 0.9. Varying the nitrogen concentration in the nitride layer permits integration of different FET characteristics on the same chip. In particular, varying x in the WNx layer permits adjustment of the threshold voltage in the different FETs. The polysilicon depletion effect is substantially reduced, and the gate structure can be made thermally stable up to about 1000° C.

Abstract: A semiconductor device with strain enhancement is formed by providing a semiconductor substrate and an overlying control electrode having a sidewall. An insulating layer is formed adjacent the sidewall of the control electrode. The semiconductor substrate and the control electrode are implanted to form first and second doped current electrode regions, a portion of each of the first and second doped current electrode regions being driven to underlie both the insulating layer and the control electrode in a channel region of the semiconductor device. The first and second doped current electrode regions are removed from the semiconductor substrate except for underneath the control electrode and the insulating layer to respectively form first and second trenches. An insitu doped material containing a different lattice constant relative to the semiconductor substrate is formed within the first and second trenches to function as first and second current electrodes of the semiconductor device.

Abstract: A gate insulating film on a silicon substrate of includes a SiO2 film and a high-k film. The high-k film contains a transition metal, aluminum, silicon, and oxygen. The concentration of silicon in the high-k film is higher than the concentrations of the transition metal and aluminum in the vicinity of the interface with the SiO2 film and the vicinity of the interface with the gate electrode. Furthermore, it is preferable that the concentration of silicon is the highest at least in one of the vicinity of the interface with the SiO2 film or the vicinity of the interface with the gate electrode, gradually decreases with distance from these interfaces, and becomes the lowest in a central part of the high-k film.

Abstract: This invention is embodied in an improved process for growing high-quality silicon dioxide layers on silicon by subjecting it to a gaseous mixture of nitrous oxide (N2O) and ozone (O3). The presence of O3 in the oxidizing ambiance greatly enhances the oxidation rate compared to an ambiance in which N2O is the only oxidizing agent. In addition to enhancing the oxidation rate of silicon, it is hypothesized that the presence of O3 interferes with the growth of a thin silicon oxynitride layer near the interface of the silicon dioxide layer and the unreacted silicon surface which makes oxidation in the presence of N2O alone virtually self-limiting The presence of O3 in the oxidizing ambiance does not impair oxide reliability, as is the case when silicon is oxidized with N2O in the presence of a strong, fluorine-containing oxidizing agent such as NF3 or SF6.

Abstract: A method of processing a for an electronic device, comprising, at least: a nitridation step (a) of supplying nitrogen radicals on the surface of the electronic device substrate, to thereby form a nitride film on the surface thereof; and a hydrogenation step (b) of supplying hydrogen radicals to the surface of the electronic device substrate. By use of this method, it is possible to recover the degradation in the electric property of an insulating film due to a turnaround phenomenon which can occur at the time of nitriding an Si substrate, etc.

Abstract: The present invention provides a method for processing a semiconductor device wherein a dielectric layer is partially converted into a silicon-oxy-nitride by incorporation of nitrogen atoms into the dielectric layer, which comprises a silicon oxide. Before the introduction of the nitrogen atoms into the dielectric layer, the dielectric layer is provided as a silicon oxide in which the atomic silicon to oxygen ration is greater than ½. In this way, MOS transistors are obtained with a high quality interface between the dielectric region and semiconductor substrate, and a dielectric region which is impermeable to impurity atoms from the gate region and which has a thickness which is substantially equal to the dielectric layer as deposited.

Abstract: Embodiments in accordance with the present invention provide alternative materials, and methods of forming such materials, that are effective as dielectric layers. Such embodiments include forming metal-containing dielectric layers over a silicon-containing substrate where a metal-containing layer is first formed and that treated to form a dielectric layer. Dielectric layers formed by methods of the present invention have a dielectric constant greater than that of silicon dioxide, and can have an equivalent oxide thickness of less than 2 nanometers. Such dielectric layers are useful in the forming of a variety of semiconductor devices such as transistors, capacitors and the like where such devices and integrated circuits formed from such devices are encompassed by embodiments in accordance with the present invention.

Abstract: A substrate processing method comprises the step of forming an oxide film on a silicon substrate surface, and introducing nitrogen atoms into the oxide film by exposing the oxide film to nitrogen radicals excited in plasma formed by a microwave introduced via a planar antenna.