Insulator Formed On Silicon Semiconductor Body (epo) Patents (Class 257/E21.191)
E Subclasses
- Final conductor next to insulator having lateral composition or doping variation, or being formed laterally by more than one deposition step (EPO) (Class 257/E21.196)
- Final conductor layer next to insulator being silicon e.g., polysilicon, with or without impurities (EPO) (Class 257/E21.197)
- Conductor layer next to insulator is Si or Ge or C and their non-Si alloys (EPO) (Class 257/E21.201)
- Conductor layer next to the insulator is single metal, e.g., Ta, W, Mo, Al (EPO) (Class 257/E21.202)
- Conductor layer next to insulator is metallic silicide (Me Si) (EPO) (Class 257/E21.203)
- Conductor layer next to insulator is non-MeSi composite or compound, e.g., TiN (EPO) (Class 257/E21.204)
- Characterized by sectional shape, e.g., T-shape, inverted T, spacer (EPO) (Class 257/E21.205)
- Lithography, isolation, or planarization-related aspects of making conductor-insulator-semiconductor structure, e.g., sub-lithography lengths; to solve problems arising at crossing with side of device isolation (EPO) (Class 257/E21.206)