Abstract: A system and method for forming graphene layers on a substrate. The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.
Abstract: In a method of making graphite devices, a preselected crystal face of a crystal is annealed to create a thin-film graphitic layer disposed against selected face. A preselected pattern is generated on the thin-film graphitic layer. A functional structure includes a crystalline substrate having a preselected crystal face. A thin-film graphitic layer is disposed on the preselected crystal face. The thin-film graphitic layer is patterned so as to define at least one functional structure.
Type:
Grant
Filed:
December 14, 2005
Date of Patent:
February 5, 2008
Assignee:
Georgia Tech Research Corp.
Inventors:
Walt A. DeHeer, Claire Berger, Phillip N. First