Abstract: A film forming method includes: placing a substrate on which a pattern, which includes a plurality of convex and concave portions, is formed on a stage disposed inside a chamber; and selectively forming a silicon-containing film on the plurality of convex portions of the pattern by applying a bias power to the stage and introducing microwaves into the chamber while supplying a processing gas containing a silicon-containing gas and a nitrogen-containing gas into the chamber to generate plasma, wherein the selectively forming the silicon-containing film includes a first film formation of forming a silicon-containing film around upper sides of the plurality of convex portions and a second film formation of forming a silicon-containing film on upper portions of the plurality of convex portions.

Abstract: A method for forming a semiconductor structure includes receiving a substrate including a first gate structure; forming a first semiconductor layer over the first gate structure, forming a second semiconductor layer on the first semiconductor layer, performing an etching back operation to remove a portion of the second semiconductor layer and a portion of the first semiconductor layer with an etchant, the etching rate of the first semiconductor layer upon exposure to the etchant is greater than an etching rate of the second semiconductor layer upon exposure to the etchant; forming a hard mask spacer over the first semiconductor layer and the second semiconductor layer, a portion of the second semiconductor layer is exposed through the hard mask spacer; removing the portions of the second semiconductor layer and the first semiconductor layer through the hard mask spacer to form a second gate structure and expose a portion of the substrate.

Abstract: There is provided an etching method for silicon nitride that enables selective etching of silicon nitride without using plasma. The etching method for silicon nitride includes placing etching object (12) containing silicon nitride in an etching gas containing halogen fluoride, which is a compound of bromine or iodine and fluorine, to etch the silicon nitride of the etching object (12) without using plasma under a pressure of 1 Pa to 80 kPa.

Abstract: Methods are provided herein for forming spacers on a patterned substrate. A self-aligned multiple patterning (SAMP) process is utilized for patterning structures, spacers formed adjacent mandrels, on a substrate. In one embodiment, a novel approach of etching titanium oxide (TiO2) spacers is provided. Highly anisotropic etching of the spacer along with a selective top deposition is provided. In one embodiment, an inductively coupled plasma (ICP) etch tool is utilized. The etching process may be achieved as a one-step etching process. More particularly, a protective layer may be selectively formed on the top of the spacer to protect the mandrel as well as minimize the difference of the etching rates of the spacer top and the spacer bottom. In one embodiment, the techniques may be utilized to etch TiO2 spacers formed along amorphous silicon mandrels using an ICP etch tool utilizing a one-step etch process.

Abstract: The present disclosure describes a semiconductor structure having bonded wafers with storage layers and a method to bond wafers with storage layers. The semiconductor structure includes a first wafer including a first storage layer with carbon, a second wafer including a second storage layer with carbon, and a bonding layer interposed between the first and second wafers and in contact with the first and second storage layers.

Abstract: An apparatus for treating a substrate includes a light treatment chamber having an interior space, a support unit that supports the substrate in the interior space, and an irradiation unit that irradiates light to the substrate in the interior space to remove organic matter remaining on the substrate, in which the irradiation unit includes a first light source that irradiates first light to the substrate and a second light source that irradiates, to the substrate, second light having a different wavelength range from the first light.

Abstract: A method includes forming a first layer on a substrate; forming a first plurality of trenches in the first layer by a patterning process; and forming a second plurality of trenches in the first layer by another patterning process, resulting in combined trench patterns in the first layer. A first trench of the second plurality connects two trenches of the first plurality. The method further includes forming dielectric spacer features on sidewalls of the combined trench patterns. A space between two opposing sidewalls of the first trench is completely filled by the dielectric spacer features and another space between two opposing sidewalls of one of the two trenches is partially filled by the dielectric spacer features.

Abstract: A method includes etching a substrate to form an opening, depositing a first dielectric liner extending into the opening, and depositing a second dielectric liner over the first dielectric liner. The second dielectric liner extends into the opening. A conductive material is filled into the opening. The method further includes performing a first planarization process to planarize the conductive material so that a portion of the conductive material in the opening forms a through-via, performing a backside grinding process on the substrate until the through-via is revealed from a backside of the substrate, and forming a conductive feature on the backside of the substrate. The conductive feature is electrically connected to the through-via.

Abstract: A semiconductor structure for a memory device includes a first gate structure and a second gate structure adjacent to the first gate structure. The second gate structure includes a first layer and a second layer, and the first layer is between the second layer and the first gate structure. The first layer and the second layer include a same semiconductor material and same dopants. The first layer has a first dopant concentration, and the second layer has a second dopant concentration different from the firs dopant concentration.

Abstract: A semiconductor structure and a method for managing semiconductor wafer stress are disclosed. The semiconductor structure includes a semiconductor wafer, a first stress layer disposed on and in contact with a backside of the semiconductor wafer, and a second stress layer on and in contact with the first stress layer. The first stress layer exerts a first stress on the semiconductor wafer and the second layer exerts a second stress on the semiconductor wafer that is opposite the first backside stress. The method includes forming a first stress layer on and in contact with a backside of a semiconductor wafer, and further forming a second stress layer on and in contact with the first stress layer. The first stress layer exerts a first stress on the semiconductor wafer and the second stress layer exerts a second stress on the semiconductor wafer that is opposite to the first stress.

Abstract: A controller includes an opening degree control section configured to control a valve element opening degree of the valve main body based on a pressure measurement value of the vacuum chamber measured by a vacuum meter, and an estimation section configured to estimate measurement lag information of pressure measurement value with respect to a pressure of the vacuum chamber based on (a) an exhaust expression including a second-order derivative term of the pressure measurement value and indicating a relationship between an effective exhaust speed of a vacuum pumping system for the vacuum chamber and the pressure measurement value and (b) a pressure measurement value measured during a pressure response when the valve element opening degree is step-changed, and the opening degree control section controls the valve element opening degree based on the measurement lag information estimated by the estimation section.

Abstract: The present disclosure provides a driving substrate, a method for preparing the same, and a flexible display device. The driving substrate includes: a base substrate; a first driving function layer arranged on a first surface of the base substrate, the first driving function layer including a plurality of driving thin film transistors and a plurality of signal wirings, and at least one of the plurality of signal wirings being of a single-layer structure and having a thickness greater than a threshold; a pad layer arranged on a surface of the first driving function layer away from the base substrate, the pad layer including a plurality of first pads and a plurality of second pads, and each first pad being connected to a first electrode of the corresponding driving thin film transistor and each second pad being connected to a common electrode line in the plurality of signal wirings.

Abstract: There is provided a method of processing a substrate, the method including: a production process of producing B(OH3) or B2O3 by bringing an oxidizing agent into contact with a boron-based film in a substrate in which the boron-based film is formed on a film including a silicon-based film; and a removal process of removing the boron-based film from the substrate by dissolving the B(OH3) or B2O3 produced in the production process in water.

Abstract: Methods and devices for forming a conductive line disposed over a substrate. A first dielectric layer is disposed over the substrate and coplanar with the conductive line. A second dielectric layer disposed over the conductive line and a third dielectric layer disposed over the first dielectric layer. A via extends through the second dielectric layer and is coupled to the conductive line. The second dielectric layer and the third dielectric layer are coplanar and the second and third dielectric layers have a different composition. In some embodiments, the second dielectric layer is selectively deposited on the conductive line.

Abstract: Apparatuses and methods for formation of a bond site including an opening with a discontinuous profile are disclosed herein. An example apparatus may at least include a substrate, a contact on the substrate, and a mask layer formed on the substrate and at least a portion of the contact. The mask layer may also include an opening formed therein, with the opening having a discontinuous profile from a top surface of the mask layer to the contact.

Abstract: A method for determining abnormal equipment in semiconductor manufacturing system includes processing wafers. A measurement data relating to wafers at respective processing steps and at each tool stack run count for respective tools is provided. The method also includes performing statistical and correlation analysis on the production history data and the measurement data to determine multiple parameters including bad ratio (Rb) and good ratio (Rg) for each tool. A first bad-to-good probability ratio (R1) for each tool is obtained by dividing Rb by Rg at the tool stack run count. A second bad-to-good probability ratio (R2) of each tool is an overall probability ratio of Rb to Rg of each tool. A first correlation coefficient (C1) is provided for the measurement data corresponding to the tool stack run count. A second correlation coefficient (C2) is provided for the first bad-to-good probability ratio (R1) corresponding to the tool stack run count.

Abstract: Structures for shallow trench isolation regions and methods for forming shallow trench isolation regions. A trench is etched partially through a device layer of a silicon-on-insulator substrate. A section of the device layer at a bottom of the trench is thermally oxidized to form a shallow trench isolation region in the trench. During the thermal oxidation, another region of the device layer may be concurrently oxidized over a partial thickness and, after removal of the oxide from this device layer region, used as a thinned silicon body. Prior to the thermal oxidation process, this device layer region may be implanted with an oxidation-retarding species that decreases its oxidation rate in comparison with the oxidation rate of the section of the device layer used to form the shallow trench isolation region.

Abstract: An example provides a semiconductor device including an insulator with a predetermined thickness between a well region of a semiconductor substrate and a resistor of polysilicon. The insulator has a structure that is able to withstand an ultrahigh voltage, and thereby allows the manufacture of a semiconductor device resistor that can bear an ultrahigh voltage without increasing the size of a semiconductor substrate and a semiconductor device including such a resistor. Other examples provide a method for manufacturing such a semiconductor device.

Abstract: A method of forming a semiconductor structure includes the following operations: (i) forming a feature comprising germanium over a substrate; (ii) removing a portion of the feature such that an interior portion of the feature is exposed; (iii) exposing a surface of the exposed interior portion to a surrounding containing oxygen; and (iv) treating the germanium oxide on the surface of the exposed interior portion with a liquid containing water.

Abstract: Processes for masking electronic devices, including, but not limited to, electronic subassemblies, prior to the application of protective coatings to the electronic devices are disclosed. Such processes include the use of a plurality of different masking techniques in combination to mask the electronic device. Different masking techniques may be used to mask different features and/or components of the electronic device. Some features and/or components may be masked by way of two or more masking techniques. With one or more masks in place, an electronic device may be protectively coated. After a protective coating has been applied to the electronic device, at least a portion of the mask(s) may be removed from the electronic device. Protectively coated electronic devices may then be assembled with one another.

Abstract: The disclosure relates generally to a metal-oxide-semiconductor field effect transistor (MOSFET) structures and methods of forming the same. The MOSFET structure includes at least one semiconductor body on a substrate; a dielectric cap on a top surface of the at least one semiconductor body, wherein a width of the at least one semiconductor body is less than a width of the dielectric cap; a gate dielectric layer conformally coating the at least one semiconductor body; and at least one electrically conductive gate on the gate dielectric layer.

Abstract: A silicon photonics device of hybrid waveguides having a coupling interlayer with an accurately controlled thickness and a method of making the same. The device includes a first plurality of Si waveguides formed in a SOI substrate and a first layer of SiO2 overlying the first plurality of Si waveguides and a second plurality of Si3N4 waveguides formed on the first layer of SiO2. At least one Si3N4 waveguide is disposed partially overlapping with at least one of the first plurality Si waveguides in vertical direction separated by the first layer of SiO2 with a thickness controlled no greater than 90 nm. The device includes a second layer of SiO2 overlying the second plurality of Si3N4 waveguides. The method of accurately controlling the coupling interlayer SiO2 thickness includes a multilayer SiO2/Si3N4/SiO2 hard mask process for SiO2 etching and polishing as stopping and buffering layer as well as Si waveguide etching mask.

Abstract: A semiconductor device has active regions with different conductivity types. A substrate has a PMOS region and an NMOS region. A first active region is in the PMOS region. A second active region is in the NMOS region. A semiconductor layer is on the first active region. A first gate electrode crosses the first active region and extends on the semiconductor layer. A second gate electrode is on the second active region. An upper end of the first active region extends to a level lower than an upper end of the second active region. A lower end of the first active region extends to a level lower than a lower end of the second active region.

Abstract: The present disclosure relates to a method of embedding an ESF3 memory in a HKMG integrated circuit that utilizes a replacement gate technology. The ESF3 memory is formed over a recessed substrate which prevents damage of the memory control gates during the CMP process performed on the ILD layer. An asymmetric isolation zone is also formed in the transition region between the memory cell and the periphery circuit boundary.

Abstract: A method of forming a nonvolatile memory cell includes forming a first electrode and a second electrode of the memory cell. Sacrificial material is provided between the first second electrodes. The sacrificial material is exchanged with programmable material. The sacrificial material may additionally be exchanged with select device material.

Abstract: A method for fabricating a patterned structure in a semiconductor device is provided. First, a substrate with a first region and a second region is provided. Then, a plurality of sacrificial patterns is respectively formed within the first region and the second region. A first spacer is then formed on the sidewalls of each of the sacrificial patterns followed by forming a mask layer to cover the sacrificial patterns located within the first region. Finally, the first spacer exposed from the mask layer is trimmed to be a second spacer and the mask layer is then removed.

Abstract: Methods of forming contact holes include forming a first guide pattern over an etching target layer. The first guide pattern has first openings each extending in a first direction and each first opening arranged in a direction perpendicular to the first direction. A first BCP structure is formed in each first opening. The first BCP structure includes first material layers in the first direction at a first pitch in each of the first openings, and second material layers filling a remaining portion of each first opening. First holes are formed by removing the first material layers. A second guide pattern is formed over the first guide pattern and the second material layers, and the above processes are performed on the second guide pattern to form second holes. Portions of the etching target layer overlapped by the first holes or the second holes are removed to form a desired pattern.

Abstract: In a base material with a single-crystal silicon carbide film according to an embodiment of the invention, a plurality of recessed portions is formed on the surface of a silicon substrate, an insulating film including silicon oxide is formed across the surface of the silicon substrate including the inner surfaces of the recessed portions, the top surfaces of side wall portions of recessed portions of the insulating film form flat surfaces, a single-crystal silicon carbide film is joined on the flat surfaces, and the recessed portions below the single-crystal silicon carbide film form holes.

Abstract: A resist underlayer composition, including a solvent, and an organosilane condensation polymerization product of hydrolyzed products produced from a compound represented by Chemical Formula 1, a compound represented by Chemical Formula 2, and a compound represented by Chemical Formula 3.

Abstract: Some embodiments include methods of forming electrically conductive lines. Photoresist features are formed over a substrate, with at least one of the photoresist features having a narrowed region. The photoresist features are trimmed, which punches through the narrowed region to form a gap. Spacers are formed along sidewalls of the photoresist features. Two of the spacers merge within the gap. The photoresist features are removed to leave a pattern comprising the spacers. The pattern is extended into the substrate to form a plurality of recesses within the substrate. Electrically conductive material is formed within the recesses to create the electrically conductive lines. Some embodiments include semiconductor constructions having a plurality of lines over a semiconductor substrate. Two of the lines are adjacent to one another and are substantially parallel to one another except in a region wherein said two of the lines merge into one another.

Abstract: The present invention provides polyimide polymer materials for passivating semiconductor wafers and methods for fabricating thereof. The present invention further provides a device that includes a semiconductor wafer and a passivating layer disposed on the surface of the wafer, wherein the passivating layer comprises such polyimide polymers.

Abstract: A method of forming an array of openings in a substrate. The method comprises forming a template structure comprising a plurality of parallel features and a plurality of additional parallel features perpendicularly intersecting the plurality of additional parallel features of the plurality over a substrate to define wells, each of the plurality of parallel features having substantially the same dimensions and relative spacing as each of the plurality of additional parallel features. A block copolymer material is formed in each of the wells. The block copolymer material is processed to form a patterned polymer material defining a pattern of openings. The pattern of openings is transferred to the substrate to form an array of openings in the substrate. A method of forming a semiconductor device structure, and a semiconductor device structure are also described.

Abstract: Ultrafine dimensions are accurately and efficiently formed in a target layer using a spacer lithographic technique comprising forming a first mask pattern, forming a cross-linkable layer over the first mask pattern, forming a cross-linked spacer between the first mask pattern and cross-linkable layer, removing the cross-linkable layer, cross-linked spacer from the upper surface of the first mask pattern and the first mask pattern to form a second mask pattern comprising remaining portions of the cross-linked spacer, and etching using the second mask pattern to form an ultrafine pattern in the underlying target layer.

Abstract: A component having a robust, but acoustically sensitive microphone structure is provided and a simple and cost-effective method for its production. This microphone structure includes an acoustically active diaphragm, which functions as deflectable electrode of a microphone capacitor, a stationary, acoustically permeable counter element, which functions as counter electrode of the microphone capacitor, and an arrangement for detecting and analyzing the capacitance changes of the microphone capacitor. The diaphragm is realized in a diaphragm layer above the semiconductor substrate of the component and covers a sound opening in the substrate rear. The counter element is developed in a further layer above the diaphragm. This further layer generally extends across the entire component surface and compensates level differences, so that the entire component surface is largely planar according to this additional layer.

Abstract: A method may include forming first hard mask patterns and second hard mask patterns extending in a first direction and repeatedly and alternately arranged on a lower layer, forming third mask patterns extending in a second direction perpendicular to the first direction on the first and second hard mask patterns, etching the first hard mask patterns using the third mask patterns to form first openings, forming filling patterns filling the first openings and gap regions between the third mask patterns, forming spacers on both sidewalls of each of the filling patterns, after removing the third mask patterns, and etching the second hard mask patterns using the filling patterns and the spacers to form second openings.

Abstract: The disclosed aspects relate to controlling density of photomasks. One or more unprintable auxiliary patterns can be placed near a mask feature as well as onto a location of a feature of the main pattern. If a density is measured and is not within an acceptable density range, one or more printable auxiliary patterns can be replaced with unprintable auxiliary patterns and/or one or more unprintable auxiliary patterns can be replaced with printable auxiliary patterns. The disclosed aspects can be utilized to create a photomask and/or a semiconductor device, such as a large scale integrated circuit device, that comprises the photomask.

Abstract: A method of forming a semiconductor device, and a product formed thereby, is provided. The method includes forming a pattern in a mask layer using, for example, double patterning or multi-patterning techniques. The mask is treated to smooth or round sharp corners. In an embodiment in which a positive pattern is formed in the mask, the treatment may comprise a plasma process or an isotropic wet etch. In an embodiment in which a negative pattern is formed in the mask, the treatment may comprise formation of conformal layer over the mask pattern. The conformal layer will have the effect of rounding the sharp corners. Other techniques may be used to smooth or round the corners of the mask.

Abstract: A method for fabricating a patterned structure in a semiconductor device is provided. First, a substrate with a first region and a second region is provided. Then, a plurality of sacrificial patterns is respectively formed within the first region and the second region. A first spacer is then formed on the sidewalls of each of the sacrificial patterns followed by forming a mask layer to cover the sacrificial patterns located within the first region. Finally, the first spacer exposed from the mask layer is trimmed to be a second spacer and the mask layer is then removed.

Abstract: A method of forming metal gate structure includes providing a substrate; forming a gate dielectric layer, a material layer and a polysilicon layer stacked on the substrate; forming a first mask layer, a second mask layer and a patterned photoresist on the polysilicon layer; removing portions of the second mask layer and the first mask layer to form a hard mask by utilizing the patterned photoresist as an etching mask; removing the patterned photoresist, and next utilizing the hard mask as an etching mask to remove parts of the polysilicon layer and parts of the material layer. Thus, a gate stack is formed. Since the patterned photoresist is removed before forming the gate stack, the gate stack is protected from damages of the photoresist-removing process. The photoresist-removing process does not attack the sidewalls of the gate stack, so a bird's beak effect of the gate dielectric layer is prevent.

Abstract: The present invention provides a method to form deep features in a stacked semiconductor structure. Deposition of a non-conformal hardmask onto a patterned topography can form a hardmask to protect all but recessed areas with minimal integration steps. The invention enables etching deep features, even through multiple BEOL layers, without multiple additional process steps.

Abstract: A method for forming contact holes includes following steps. A substrate including a dense region and an isolation region is provided. A material layer is formed on the substrate. Sacrificed patterns are formed on the material layer in the dense region, wherein there is a first opening between the two adjacent sacrificed patterns. A spacer is formed on each of two sides of each of the sacrificed patterns, wherein the spacers are separated from each other. The sacrificed patterns are removed to form a second opening between two adjacent spacers. A planar layer is formed to fill up the second openings. A first slit is formed in the planar layer, wherein the first slit exposes a portion of the material layer under the second openings. The portion of the material layer exposed by the first slit is removed to form third openings in the material layer.

Abstract: A method of forming a nonvolatile memory cell includes forming a first electrode and a second electrode of the memory cell. Sacrificial material is provided between the first second electrodes. The sacrificial material is exchanged with programmable material. The sacrificial material may additionally be exchanged with select device material.

Abstract: A method of forming patterns of a semiconductor device may include forming a photoresist layer that includes a photo acid generator (PAG) and a photo base generator (PBG), generating an acid from the PAG in a first exposed portion of the photoresist layer by first-exposing the photoresist layer, and generating a base from the PBG in a second exposed portion of the photoresist layer by second-exposing a part of the first exposed portion and neutralizing the acid. The method may also include baking the photoresist layer after the first and second-exposing and deblocking the photoresist layer of the first exposed portion in which the acid is generated to form a deblocked photoresist layer, and forming a photoresist pattern by removing the deblocked photoresist layer by using a developer.

Abstract: The present invention provides polyimide polymer materials for passivating semiconductor wafers and methods for fabricating thereof. The present invention further provides a device that includes a semiconductor wafer and a passivating layer disposed on the surface of the wafer, wherein the passivating layer comprises such polyimide polymers.

Abstract: A method of patterning a hard mask layer for defining a deep trench is described. A substrate formed with an isolation structure therein is provided. A hard mask layer is formed over the substrate provided. A patterned photoresist layer is formed over the hard mask layer, having therein a deep-trench opening pattern over the isolation structure. An etching gas not containing hydrogen is used to etch the hard mask layer with the patterned photoresist layer as a mask and thereby transfer the deep-trench opening pattern to the hard mask layer.

Abstract: According to one embodiment, a pattern generating apparatus includes a light intensity calculating part that calculates light intensity at a pattern to be formed based on exposure and light intensity at the periphery of the pattern, a light intensity evaluating part that evaluates the light intensities at the pattern and the periphery of the pattern, and a data output part that outputs correction data for the pattern based on the results of the evaluation by the light intensity part.

Abstract: A resist underlayer composition, including a solvent, and an organosilane condensation polymerization product of hydrolyzed products produced from a compound represented by Chemical Formula 1, a compound represented by Chemical Formula 2, and a compound represented by Chemical Formula 3.

Abstract: This invention discloses a semiconductor power device. The trenched semiconductor power device includes a trenched gate, opened from a top surface of a semiconductor substrate, surrounded by a source region encompassed in a body region near the top surface above a drain region disposed on a bottom surface of a substrate. The semiconductor power device further includes an implanting-ion block disposed above the top surface on a mesa area next to the body region having a thickness substantially larger than 0.3 micron for blocking body implanting ions and source ions from entering into the substrate under the mesa area whereby masks for manufacturing the semiconductor power device can be reduced.

Abstract: Embodiments described herein relate to materials and processes for patterning and etching features in a semiconductor substrate. In one embodiment, a method of forming a composite amorphous carbon layer is provided. The method comprises positioning a substrate in a process chamber, introducing a hydrocarbon source gas into the process chamber, introducing a diluent source gas into the process chamber, introducing a plasma-initiating gas into the process chamber, generating a plasma in the process chamber, forming an amorphous carbon initiation layer on the substrate, wherein the hydrocarbon source gas has a volumetric flow rate to diluent source gas flow rate ratio of 1:12 or less, and forming a bulk amorphous carbon layer on the amorphous carbon initiation layer, wherein a hydrocarbon source gas used to form the bulk amorphous carbon layer has a volumetric flow rate to a diluent source gas flow rate of 1:6 or greater.

Abstract: An exposure mask includes: an insulative substrate; a light reflecting film provided on the substrate; a light absorbing film provided on the light reflecting film and forming a pattern in a center region on the substrate; and an interconnect provided on the substrate, the light reflecting film and the light absorbing film not being provided in a frame-shaped region surrounding the center region, and the interconnect being placed so that a portion of a laminated film composed of the light reflecting film and the light absorbing film located inside the frame-shaped region is electrically connected to a portion of the laminated film located outside the frame-shaped region.