Abstract: An electronic device includes: a substrate having first and second surfaces, wherein the first surface is opposite to the second surface; a first electronic element mounted on the first surface of the substrate; a second electronic element mounted on the second surface of the substrate; and a resin mold sealing the first electronic element and the first surface of the substrate. The resin mold further seals the second electronic element on the second surface of the substrate. The second surface of the substrate has a portion, which is exposed from the resin mold. The second electronic element is not disposed on the portion of the second surface.

Abstract: A semiconductor packaging substrate with improved capability of electrostatic dissipation comprises a dielectric layer, a plurality of leads, a plurality of first electrostatic guiding traces, a plurality of second electrostatic guiding traces and a solder mask. The first electrostatic guiding traces and the second electrostatic guiding traces are formed in pairs in a plurality of electrostatic dissipation regions on the dielectric layer, where each pair of the first and second electrostatic guiding traces are disposed in equal line spacing and are electrically isolated from each other. The solder mask partially covers the leads but exposes the first electrostatic guiding traces and the second electrostatic guiding traces. The first electrostatic guiding traces are connected to some of the leads to enhance protection against electrostatic discharge.

Abstract: An integrated circuit package that comprises a lead frame 105, an integrated circuit located on the lead frame and a shunt resistor coupled to the integrated circuit. The shunt resistor has a lower temperature coefficient of resistance than the lead frame, and the lead frame has a lower resistivity than the shunt resistor. The shunt resistor has a low-resistance coupling to external leads of the lead frame, or, the shunt resistor has its own integrated external leads.

Abstract: A mold resin sealing device for sealing a surface of a semiconductor wafer with a mold resin, includes: a first mold die; and a second mold die disposed opposite to the first mold die, the second mold die having a second surface; wherein the first mold die includes a first part having a first surface facing the second surface of the second mold die and having an opening in a central region of the first surface; and a first step-like movable part capable of moving in the opening in both directions so that the first step-like movable part moves toward and away from the second mold die.

Abstract: A method of manufacturing a semiconductor device comprises: preparing a lead frame including a package external region and a package internal region, a burred surface being provided at a top end of a side of the lead frame, and a fracture surface being provided in the vicinity of the top end of the side; chamfering the top end of the side in the package external region; mounting a semiconductor element on the lead frame and sealing the semiconductor element with mold resin in the package internal region; and removing resin burr provided on the side of the lead frame in the package external region after the chamfering and the sealing.

Abstract: A flash memory card and methods of manufacturing same are disclosed. The card includes a semiconductor package fabricated to receive a single-sided or double-sided lid. A surface of the semiconductor package may be formed with holes, trenches and/or pockmarks. After the holes, trenches and/or pockmarks are formed, a lid may be attached to the package surface in an injection molding process. During the injection molding process, the molten plastic flows into the holes, trenches and/or pockmarks to interconnect with the surface of the semiconductor package. Thus, when the molten plastic hardens, the holes, trenches and/or pockmarks ensure that the lid remains firmly attached to semiconductor package.

Abstract: The injection molding system comprises a substrate, an inner cover, a molding tool, and a bottom plate. The substrate is used to locate at least one semiconductor device under molding and the inner cover with at least one first injection via, cavity and runner placed over the substrate. In addition, the molding tool includes at least one second injecting via aligned with the runner and the bottom plate is placed under the substrate. Furthermore, a filling material is filled into the cavity and runner of the inner cover during molding. In order to avoid overflowing the filling material, the system further comprises an O-ring placed between the molding tool and the inner cover. The inner radius of the O-ring corresponds with the inner radius of the injection via and is aligned with it.

Abstract: A semiconductor device has a first semiconductor die including TSVs mounted to a carrier with a thermally releasable layer. A first encapsulant having a first coefficient of thermal expansion CTE is deposited over the first semiconductor die. The first encapsulant includes an elevated portion in a periphery of the first encapsulant that reduces warpage. A surface of the TSVs is exposed. A second semiconductor die is mounted to the surface of the TSVs and forms a gap between the first and second semiconductor die. A second encapsulant having a second CTE is deposited over the first and second semiconductor die and within the gap. The first CTE is greater than the second CTE. In one embodiment, the first and second encapsulants are formed in a chase mold. An interconnect structure is formed over the first and second semiconductor die.

Abstract: A method of preparing a semiconductor package including disposing photosensitive adhesive film on a reinterconnected rear surface of a wafer on which the through electrodes are disposed, and forming a pattern corresponding to the through electrodes to prepare the semiconductor package.

Abstract: A panel with a reconfigured wafer including semiconductor chips arranged in rows and columns on semiconductor device positions includes: at least one semiconductor chip having a front, a rear and edge sides provided per semiconductor device position. The reconfigured wafer includes: a front side that forms a coplanar area with the front sides of the at least one semiconductor chip and a plastic housing composition embedding the edge sides and the rear side of the at least one semiconductor chip. The reconfigured wafer includes, on a rear side of the wafer, structures configured to stabilize the panel. The structures are composed of the plastic housing composition and are formed as thickenings of the reconfigured wafer.

Abstract: Provided are a semiconductor package and a method of fabricating the same. In one embodiment, to fabricate a semiconductor package, a wafer having semiconductor chips fabricated therein is provided. A heat sink layer is formed over the wafer. The heat sink layer contacts top surfaces of the semiconductor chips. Thereafter, the plurality of semiconductor chips are singulated from the wafer.

Abstract: Measures are introduced to make possible a low-cost packaging of sensor chips having a media access. For this purpose, the sensor chip is first mounted on a substrate and is contacted. The sensor chip is then at least partially embedded in a molding compound. Finally, at least one portion of the media access is produced by the subsequent structuring of the molding compound.

Abstract: An exposed die overmolded flip chip package includes a substrate. A die is flip chip mounted to an upper surface of the substrate. The package further includes a mold cap filling a space between an active surface of the die and the upper surface of the substrate. The mold cap includes a principal surface, sidewalls extending from the upper surface of the substrate to the principal surface, an annular surface coplanar with the inactive surface of the die and extending outward from a peripheral edge of the inactive surface of the die, and protruding surfaces extending between the principal surface and the annular surface. The mold cap does not cover the inactive surface of the die such that heat transfer from the die to the ambient environment is maximized and the package thickness is minimized.

Abstract: A semiconductor device includes first to third semiconductor chips. The second semiconductor chip is stacked over the first semiconductor chip. The third semiconductor chip is stacked over the second semiconductor chip. The second semiconductor chip shields the first semiconductor chip from noises generated by the third semiconductor chip. The second semiconductor chip shields the third semiconductor chip from noises generated by the first semiconductor chip.

Abstract: According to one exemplary embodiment, an overmolded package includes a component situated on a substrate. The overmolded package further includes an overmold situated over the component and the substrate. The overmolded package further includes a wirebond cage situated over the substrate and in the overmold, where the wirebond cage surrounds the component, and where the wirebond cage includes a number of wirebonds. The wirebond cage forms an EMI shield around the component. According to this exemplary embodiment, the overmolded package further includes a conductive layer situated on a top surface of the overmold and connected to the wirebond cage, where the conductive layer forms an EMI shield over the component.

Abstract: A a printed circuit board (PCB) for a semiconductor package and a semiconductor package having the same, which may improve adhesion of a PCB with an encapsulant. The semiconductor package includes a PCB for a semiconductor package including a resin through hole disposed in a central portion thereof and at least one resin fixing hole disposed in an outermost edge thereof, a semiconductor chip connected to first connection pads disposed on a first surface of the PCB by bumps, an upper encapsulant configured to hermetically seal the first surface of the PCB and the semiconductor chip, and a lower encapsulant protrusion configured to extend to a second surface of the PCB through the resin through hole and the resin fixing hole disposed in the first surface of the PCB.

Abstract: The invention provides a wafer mold material for collectively subjecting a wafer having semiconductor devices on a surface thereof to resin molding, wherein the wafer mold material has a resin layer containing a filler and at least any one of an acrylic resin, a silicone resin having an epoxy group, an urethane resin, and a polyimide silicone resin, and the wafer mold material is formed into a film-like shape. There can be a wafer mold material that enables collective molding (wafer molding) with respect to a wafer having semiconductor devices formed thereon, has excellent transference performance with respect to a large-diameter thin-film wafer, can provide a flexible hardened material with low-stress properties, and can be preferably used as a mold material in a wafer level package with less warp of a formed (molded) wafer.

Abstract: A method of manufacture of an integrated circuit packaging system includes: forming a lead having a horizontal ridge at a lead top side; forming a connection layer having an inner pad and an outer pad directly on the lead top side, the inner pad having an inner pad bottom surface; mounting an integrated circuit over the inner pad; applying a molding compound, having a molding bottom surface, over the integrated circuit, the inner pad, and the outer pad; and applying a dielectric directly on the molding bottom surface and the inner pad bottom surface.

Abstract: An integrated circuit package-on-package system includes: mounting an integrated circuit package system having a mountable substrate over a package substrate with the mountable substrate having a mold structure; forming a package encapsulation having a recess over the package substrate and the integrated circuit package system. The present invention also includes: forming an anti-mold flash feature with an extension portion of the package encapsulation and constrained by the mold structure at the bottom of the recess, and partially exposing the mountable substrate in the recess with the anti-mold flash feature formed with the mold structure; and mounting an integrated circuit device over the mountable substrate in the recess.

Abstract: A stacked semiconductor structure and fabrication method thereof are provided. The method includes mounting and connecting electrically a semiconductor chip to a first substrate, mounting on the first substrate a plurality of supporting members corresponding in position to a periphery of the semiconductor chip, mounting a second substrate having a first surface partially covered with a tape and a second surface opposite to the first surface on the supporting members via the second surface, connecting electrically the first and second substrates by bonding wires, forming on the first substrate an encapsulant for encapsulating the semiconductor chip, the supporting members, the second substrate, the bonding wires, and the tape with an exposed top surface, and removing the tape to expose the first surface of the second substrate and allow an electronic component to be mounted thereon. The present invention prevents reflow-induced contamination, spares a special mold, and eliminates flash.

Abstract: A multi-chip stacking method to reduce voids between stacked chips is revealed. A first chip is disposed on a substrate, and a plurality of first bonding wires are formed by wire bonding to electrically connect the first chip and the substrate. A second chip is disposed on an active surface of the first chip where a FOW (film over wire) adhesive is formed on a back surface of the second chip. The FOW adhesive partially encapsulates the first bonding wires and adheres to the active surface of the first chip. Then, the substrate is placed in a pressure oven to provide a positive pressure greater than one atm during thermally curing the FOW adhesive with exerted pressures. Accordingly, voids can be reduced inside the FOW adhesive during the multi-chip stacked processes where issues of poor adhesion and popcorn between chips can be avoided.

Abstract: In QFN packages for vehicles which are required to have high reliability, the side surface of leads is mostly covered with lead-to-lead resin protrusions, which prevent smooth formation of solder fillets during reflow mounting. When the lead-to-lead protrusions are mechanically removed using a punching die, there is a high possibility of causing cracks of the main body of the package or terminal deformation. When a spacing is provided between the punching die and the main body of the package in order to avoid such damages, a resin residue is produced to hinder complete removal of this lead-to-lead resin protrusion. The present invention provides a method for manufacturing semiconductor device of a QFN type package using multiple leadframes having a dam bar for tying external end portions of a plurality of leads.

Abstract: A semiconductor die has active circuits formed on its active surface. Contact pads are formed on the active surface of the semiconductor die and coupled to the active circuits. A die extension region is formed around a periphery of the semiconductor die. Conductive THVs are formed in the die extension region. A wafer level conductive plane or ring is formed on a center area of the active surface. The conductive plane or ring is connected to a first contact pad to provide a first power supply potential to the active circuits, and is electrically connected to a first conductive THV. A conductive ring is formed partially around a perimeter of the conductive plane or ring and connected to a second contact pad for providing a second power supply potential to the active circuits. The conductive ring is electrically connected to a second THV.

Abstract: An optical emitter is fabricated by bonding a Light-Emitting Diode (LED) die to a package wafer, electrically connecting the LED die and the package wafer, forming a phosphor coating over the LED die on the package wafer, molding a lens over the LED die on the package wafer, molding a reflector on the package wafer, and dicing the wafer into at least one optical emitter.

Abstract: In a semiconductor device, corner portions of a inner insulating film are chamfered, and hence a damage is less likely to reach the corner portion of the inner insulating film, though the corner portion of an outer insulating film is damaged. Therefore, a hermeticity of a semiconductor element can be effectively maintained, and the yield of semiconductor pellets can be improved. Moreover, since it is not necessary to chamfer the corner portion of the outer insulating film, the structure remains simple and the productivity can be improved.

Abstract: The present invention relates to a chip packaging method and structure, in which bonding pads provided on the chip are connected by a plurality of metal wires via bonding, each of the metal wires is bending in the middle part to be higher than a predetermined height, and its ends are respectively electrically connected with two of the bonding pads. A molding layer is packaged on the chip and the molding layer is higher than the predetermined height. The molding layer is sliced at the predetermined height. Two upper breakpoints of each metal wire are exposed and a substrate is attached onto the molding layer. A plurality of circuit contacts of the substrate are respectively electrically coupled with the upper breakpoints. Whereby, the invention is capable of reducing the length of the metal wires in order to improve transmission speed, but also to reduce the volume of the packaging structure.

Abstract: A semiconductor package with simulated wirebonds. A substrate is provided with a plurality of first pads on a first surface and a plurality of second pads on a second surface. Each of the first pads are electrically coupled to one or more of the second pads. At least one semiconductor device is located proximate the first surface of a substrate. The simulated wirebonds include at least a first dielectric layer selectively printed to create a plurality of recesses, and a conductive material located in the recesses to form first and second contact pads, and electrical traces electrically coupling the first and second contact pads. The first contact pads are electrically coupled to terminals on the semiconductor device and the second contact pads are electrically coupled to the first pads on the first surface of the substrate.

Abstract: Disclosed are a semiconductor package and a method of making the same. In the semiconductor package, a substrate and a semiconductor die are covered with and encapsulated by vertically pressing thermosetting resin having fluidity in a predetermined temperature range and denaturalizing itself in gel. Thus, it is possible to reduce a thickness of the semiconductor package and prevent wire sweeping.

Abstract: A semiconductor device package includes a semiconductor chip including a conductive pad, a die pad on which the semiconductor chip is mounted and having a first thickness, a lead pattern including a first portion disposed adjacent to the edge of the die pad and having the first thickness and a second portion having a second thickness greater than the first thickness, a heat radiation member disposed on the die pad and the lead pattern and including a groove formed at its bottom surface, and a conductive line disposed to electrically connect the conductive pad to the lead pattern corresponding to the conductive pad and partially inserted into the groove.

Abstract: A semiconductor package and related methods are described. In one embodiment, the package includes a die pad, multiple leads, a chip, a package body, and a protective layer. The die pad includes an upper sloped portion, a lower sloped portion, and a peripheral edge region defining a cavity with a cavity bottom. Each lead includes an upper sloped portion and a lower sloped portion. The chip is disposed on the cavity bottom and is coupled to the leads. The package body is formed over the chip and the leads, substantially fills the cavity, and substantially covers the upper sloped portions of the die pad and the leads. The lower sloped portions of the die pad and the leads at least partially extend outwardly from a lower surface of the package body. The protective layer substantially covers the lower sloped portion and the lower surface of at least one lead.

Abstract: Provided is a method for manufacturing a semiconductor device in which movement of an island in resin sealing is prevented. A molding die includes an upper die and a lower die. The upper and lower dies are fitted together to form cavities and runners. In the lower die, a pod is provided. After heating and melting of a tablet made of a solid resin and housed in the pod, the melted sealing resin is pressurized by a plunger, and is supplied to each of the cavities. Specifically, a liquid sealing resin is supplied from the pod to the cavities, sequentially, from the upstream of the flow of the sealing resin supplied from the pod. The cavities communicate with each other through the runners. Furthermore, the runners through which the cavities communicate are provided to be tilted with respect to a path for supplying the sealing resin.

Abstract: A fabrication method of a chip scale package includes: disposing a chip on a carrier board and embedding the chip into a composite board having a hard layer and a soft layer; and removing the carrier board so as to perform a redistribution layer (RDL) process, thereby solving the conventional problems caused by directly attaching the chip on an adhesive film, such as film-softening caused by heat, encapsulant overflow, chip deviation and contamination, etc., all of which may result in poor electrical connection between the wiring layer and the chip electrode pads in the subsequent RDL process and even waste products as a result.

Abstract: A non-leaded integrated circuits package system is provided including etching differential height lead structures having inner leads at a paddle height, providing mold locks at the bending points of the differential height lead structures, etching an elevated paddle at a same height as the inner leads, mounting a first integrated circuit on the elevated paddle, and electrically connecting first electrical interconnects between the first integrated circuit and the inner leads.

Abstract: A method of molding a semiconductor package includes coating liquid molding resin or disposing solid molding resin on a top surface of a semiconductor chip arranged on a substrate. The solid molding resin may include powdered molding resin or sheet-type molding resin. In a case where liquid molding resin is coated on the top surface of the semiconductor chip, the substrate is mounted between a lower molding and an upper molding, and then melted molding resin is filled in a space between the lower molding and the upper molding. In a case where the solid molding resin is disposed on the top surface of the semiconductor chip, the substrate is mounted on a lower mold and then the solid molding resin is heated and melts into liquid molding resin having flowability. An upper mold is mounted on the lower mold, and melted molding resin is filled in a space between the lower molding and the upper molding.

Abstract: Provided is a circuit device manufacturing method for coating a bottom surface of a circuit board with a thin coating of sealing resin. In the present invention, a circuit board having a circuit element such as a semiconductor element embedded therein is placed in a molding die, and a resin sheet containing a thermosetting resin is interposed between the circuit board and a bottom surface of an inner wall of the molding die. Under this condition, the molding die is heated to about 180° C., and a sealing resin in liquid form is injected through a gate. Thereby, the bottom surface of the circuit board can be coated with a thin coating of the sealing resin made of the molten resin sheet.

Abstract: A method of manufacture of an integrated circuit packaging system includes: forming a paddle having an indented planar surface intersecting an outwardly extending planar surface at an angle of approximately 135 degrees plus 25 degrees or minus 5 degrees; mounting an integrated circuit over the paddle; and forming an encapsulation over the integrated circuit and under the extension void free.

Abstract: An integrated circuit package system and method of manufacture thereof includes: forming an area array substrate; mounting surface conductors on the area array substrate; and molding a molded package body, having a step surrounding a core section, on the area array substrate and the surface conductors, the step providing access to the surface conductors including providing a non-vertical slope from the core section to the step.

Abstract: The present invention describes two methods (200, 400) for encapsulating semiconductor dies. Both methods (200, 400) involve attaching an encapsulation spacer (102, 302, 302a, 302b) having one or more apertures (104, 304) on an associated substrate (150) so that a group of chips (160) is located within the aperture (104, 304). The first method (200) involves dispensing encapsulant (103) directly into an aperture. The second method (400) involves attaching an encapsulant delivery layer (350, 351) onto the encapsulation spacer and discharging encapsulant into an aperture via a recessed gate (308).

Abstract: Embodiments of the present invention include a method of packaging semiconductor devices. The method comprises the steps of molding a surface of a wafer, sawing the wafer into individual devices, attaching the individual semiconductor device to an adhesive surface, molding the exposed surface, and sawing the wafer into individual semiconductor devices. The step of molding forms a continuous molded layer. The step of sawing results in each individual semiconductor having a molded layer. This molded layer corresponds to a portion of the continuous molded layer. The step of attaching includes attaching the molded layer of the individual semiconductor devices to the adhesive surface. The step of molding the exposed area includes molding an exposed area above the adhesive surface. This forms a solid expanse of material. The step of sawing the wafer into individual semiconductor devices includes sawing the solid expanse of material.

Abstract: The application relates to a semiconductor component, a photo-reflective sensor, and also a method for producing a housing for a photo-reflective sensor, wherein the housing lower part is monolithic and has at least two cavities into which an emitter and a detector are introduced.

Abstract: A die package is provided, including a die positioned on and in direct contact with a first heat sink element, and also including a package case and leads made of conductive material, protruding from the package case. The die package further includes a second heat sink element shaped as a spring element, in contact between the die and the leads, and emerging from a side of the package case opposite the first heat sink element.

Abstract: A method of manufacture of an integrated circuit packaging system includes: forming a paddle, an inner post adjacent to the paddle, a jumper pad, and an outer post, with the jumper pad between the inner post and the outer post; mounting an integrated circuit over a paddle first side, the paddle first side co-planar with the outer post; connecting a first jumper interconnect between the integrated circuit and the jumper pad; connecting a second jumper interconnect between the jumper pad and the outer post; and forming an encapsulation over paddle, the integrated circuit, the first jumper interconnect, the jumper pad, and the second jumper interconnect.

Abstract: A method of manufacture of an integrated circuit packaging system includes: forming an elevated contact above and between a lead and a die pad that is coplanar with the lead; connecting an integrated circuit and the lead; attaching a jumper interconnect between the elevated contact and the lead; and forming an encapsulant over the integrated circuit, the lead, the die pad, the elevated contact, and the jumper interconnect, the encapsulant having a recess in a base side with the elevated contact exposed in the recess and the lead exposed from the base side.

Abstract: A method of manufacturing a semiconductor device comprises: determining whether or not the viscosity of a sealing resin at a first temperature lower than the melting temperature of the sealing resin is less than or equal to a first reference value which prevents poor sealing from occurring at the first temperature, for each lot in which the corresponding sealing resin is manufactured; selecting the sealing resin of the lot when the viscosity of the sealing resin at the first temperature is less than or equal to the first reference value; introducing the sealing resin selected in selecting the sealing resin into a mold of a compression molding apparatus; and sealing a semiconductor chip mounted over a substrate with the sealing resin by compression molding using the mold heated at a second temperature higher than the first temperature after introducing the sealing resin.

Abstract: A semiconductor device includes a plastic housing and a semiconductor chip, wherein the semiconductor chip includes an active top side and a rear side. An interposer is arranged on the active top side of the semiconductor chip. At least a portion of the interposer is embedded into the plastic housing, while the top side of the interposer forms the top side of the semiconductor device. A top side fitting shape is arranged on the top side of the interposer, where the top side fitting shape has a predetermined radius of curvature that is free of plastic housing composition, and the top side fitting shape has a convex or concave lens-shaped sphere segment shape.

Abstract: A system-in-a-package based flash memory card including an integrated circuit package occupying a small overall area within the card and cut to conform to the shape of a lid for the card. An integrated circuit may be cut from a panel into a shape that fits within and conforms to the shape of lids for a finished memory card, such as for example an SD Card. The integrated circuit package may be a system-in-a-package, a multi-chip module, or other arrangement where a complete electronic system is formed in a single package.

Abstract: A QFN package includes a chip-mounting base; electrically connecting pads disposed around the periphery of the chip-mounting base, the bottom surfaces of the chip-mounting base and the electrically connecting pads being covered by a copper layer; a chip mounted on the top surface of the chip-mounting base; bonding wires electrically connecting to the chip and the electrically connecting pads; an encapsulant encapsulating the chip-mounting base, the electrically connecting pads, the chip and the bonding wires while exposing the copper layer; and a dielectric layer formed on the bottom surfaces of the encapsulant and the copper layer and having a plurality of openings exposing a portion of the copper layer. The copper layer has good bonding with the dielectric layer that helps to prevent solder material in a reflow process from permeating into the interface between the chip-mounting base, the electrically connecting pads and the dielectric layer, thereby avoiding solder extrusion and enhancing product yield.

Abstract: A method and packaging for semiconductor devices and integrated circuits is disclosed that eliminates warpage stress on packages caused by coefficient of thermal expansion (CTE) mismatch between the device, lead frame or die paddle and a molding compound. Generally, the method includes steps of: (i) mounting the die on which the device is fabricated to a die paddle of a leadframe; and (ii) encapsulating the die on the die paddle and at least a portion of the leadframe in a molding compound, wherein a difference between a first volume of molding compound above a plane of the leadframe and a second volume of molding compound below the plane of the leadframe is sufficiently reduced to substantially eliminate warpage of the finished package due to mismatch of CTEs of the device, lead frame and packaging compound. The die paddle may be etched or reduced to facilitate molding compound flowing under the plane of the leadframe. Other embodiments are also disclosed.

Abstract: A wire bonding structure of a semiconductor package includes a bonding wire, a pad and a non-conductive adhesive material. The bonding wire includes a line portion and a block portion, wherein the block portion is physically connected to the line portion, and the sectional area of the block portion is bigger than that of the line portion. The pad is bonded to the block portion. The non-conductive adhesive material covers the pad and seals the whole block portion of the bonding wire.

Abstract: A process for fabricating an electronic component includes a liquid injection molding method for overmolding a semiconductor device. The liquid injection molding method includes: i) placing the semiconductor device in an open mold, ii) closing the mold to form a mold cavity, iii) heating the mold cavity, iv) injection molding a curable liquid into the mold cavity to overmold the semiconductor device, v) opening the mold and removing the product of step iv), and optionally vi) post-curing the product of step v). The semiconductor device may have an integrated circuit attached to a substrate through a die attach adhesive.